Haijiang Yu, Ph.D. - Publications
Affiliations: | 2004 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsYear | Citation | Score | |||
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2005 | Yu H, McCarthy L, Rajan S, Keller S, Denbaars S, Speck J, Mishra U. Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts Ieee Electron Device Letters. 26: 283-285. DOI: 10.1109/Led.2005.846583 | 0.608 | |||
2005 | Yu H, McCarthy L, Xing H, Waltereit P, Shen L, Keller S, Denbaars SP, Speck JS, Mishra UK. Publisher’s Note: “Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” [Appl. Phys. Lett. 85, 5254 (2004)] Applied Physics Letters. 86: 059902. DOI: 10.1063/1.1860578 | 0.684 | |||
2004 | Yu H, McCarthy L, Xing H, Waltereit H, Shen L, Keller S, Denbaars SP, Speck JS, Mishra UK. Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing Applied Physics Letters. 85: 5254-5256. DOI: 10.1063/1.1828237 | 0.61 | |||
2003 | Xing H, Green DS, Yu H, Mates T, Kozodoy P, Keller S, DenBaars SP, Mishra UK. Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. 42: 50-53. DOI: 10.1143/Jjap.42.50 | 0.519 | |||
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