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Yuvaraj Dora, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Wu YF, Coffie R, Fichtenbaum N, Dora Y, Suh CS, Shen L, Parikh P, Mishra UK. Total GaN solution to electrical power conversion Device Research Conference - Conference Digest, Drc. 217-218. DOI: 10.1109/DRC.2011.5994505  0.634
2011 Keller S, Dora Y, Chowdhury S, Wu F, Chen X, Denbaars SP, Speck JS, Mishra UK. Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2086-2088. DOI: 10.1002/Pssc.201000958  0.542
2010 Keller S, Dora Y, Wu F, Chen X, Chowdury S, Denbaars SP, Speck JS, Mishra UK. Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition Applied Physics Letters. 97. DOI: 10.1063/1.3499428  0.383
2006 Dora Y, Han S, Klenov D, Hansen PJ, No KS, Mishra UK, Stemmer S, Speck JS. ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 575-581. DOI: 10.1116/1.2167991  0.484
2006 Dora Y, Chakraborty A, McCarthy L, Keller S, Denbaars SP, Mishra UK. High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Ieee Electron Device Letters. 27: 713-715. DOI: 10.1109/Led.2006.881020  0.67
2006 Dora Y, Chakraborty A, Heikman S, McCarthy L, Keller S, DenBaars SP, Mishra UK. Effect of ohmic contacts on buffer leakage of GaN transistors Ieee Electron Device Letters. 27: 529-531. DOI: 10.1109/Led.2006.876306  0.643
2006 Suh CS, Dora Y, Fichtenbaum N, McCarthy L, Keller S, Mishra UK. High-breakdown enhancement-mode AlGaN/GaN HEMTs with integrated slant field-plate Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346931  0.626
2006 Palacios T, Dora Y, Chakraborty A, Sanabria C, Keller S, DenBaars SP, Mishra UK. Optimization of AlGaN/GaN HEMTs for high frequency operation Physica Status Solidi (a) Applications and Materials Science. 203: 1845-1850. DOI: 10.1002/Pssa.200690013  0.589
2005 Dora Y, Suh C, Chakraborty A, Heikman S, Chandrasekaran S, Mehrotra V, Mishra UK. Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 2005: 191-192. DOI: 10.1109/DRC.2005.1553115  0.653
2004 Xing H, Dora Y, Chini A, Heikman S, Keller S, Mishra UK. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Ieee Electron Device Letters. 25: 161-163. DOI: 10.1109/Led.2004.824845  0.609
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