Year |
Citation |
Score |
2020 |
Chen B, Luo W, Wang F, Lin Y, Yan N, Xu H. A 22.5–31.2-GHz Continuously Tuning Frequency Synthesizer With 8.7-GHz Chirp for FMCW Applications Ieee Microwave and Wireless Components Letters. 30: 904-907. DOI: 10.1109/Lmwc.2020.3010089 |
0.42 |
|
2020 |
Yin Y, Li T, Xiong L, Li Y, Min H, Yan N, Xu H. A Broadband Switched-Transformer Digital Power Amplifier for Deep Back-Off Efficiency Enhancement Ieee Journal of Solid-State Circuits. 1-1. DOI: 10.1109/Jssc.2020.3005798 |
0.358 |
|
2020 |
Xu H. Introduction to the Special Section on the 2019 RFIC Symposium Ieee Journal of Solid-State Circuits. 55: 1127-1127. DOI: 10.1109/Jssc.2020.2982726 |
0.314 |
|
2019 |
Luo W, Yin Y, Xiong L, Li T, Xu H. Nonlinear Analytical Model for Switched-Capacitor Class-D RF Power Amplifiers Ieee Transactions On Circuits and Systems I-Regular Papers. 66: 2309-2321. DOI: 10.1109/Tcsi.2019.2892566 |
0.344 |
|
2019 |
Deng J, Guo Z, Zhang Y, Cao X, Zhang S, Sheng Y, Xu H, Bao W, Wan J. MoS 2 /Silicon-on-Insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection Ieee Electron Device Letters. 40: 423-426. DOI: 10.1109/Led.2019.2892782 |
0.306 |
|
2019 |
Yin Y, Xiong L, Zhu Y, Chen B, Min H, Xu H. A Compact Dual-Band Digital Polar Doherty Power Amplifier Using Parallel-Combining Transformer Ieee Journal of Solid-State Circuits. 54: 1575-1585. DOI: 10.1109/Jssc.2019.2896407 |
0.377 |
|
2019 |
Yin Y, Zhu Y, Xiong L, Luo W, Chen B, Li T, Yan N, Xu H. A Compact Transformer-Combined Polar/Quadrature Reconfigurable Digital Power Amplifier in 28-nm Logic LP CMOS Ieee Journal of Solid-State Circuits. 54: 709-719. DOI: 10.1109/Jssc.2018.2878831 |
0.349 |
|
2018 |
Li T, Yin Y, Zhu Y, Xiong L, Liu Y, Yan N, Min H, Xu H. A Wideband Efficiency-Enhanced Class-G Digital Power Amplifier for IoT Applications Ieee Microwave and Wireless Components Letters. 28: 714-716. DOI: 10.1109/Lmwc.2018.2847456 |
0.424 |
|
2017 |
Chang Y, Ye Y, Xu H, Domier C, Luhmann N, Gu QJ. An ultra-wideband CMOS PA with dummy filling for reliability Solid-State Electronics. 129: 125-133. DOI: 10.1016/J.Sse.2016.11.015 |
0.435 |
|
2012 |
Ravi A, Madoglio P, Xu H, Chandrashekar K, Verhelst M, Pellerano S, Cuellar L, Aguirre-Hernandez M, Sajadieh M, Zarate-Roldan JE, Bochobza-Degani O, Lakdawala H, Palaskas Y. A 2.4-GHz 20–40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS Ieee Journal of Solid-State Circuits. 47: 3184-3196. DOI: 10.1109/Jssc.2012.2216671 |
0.41 |
|
2012 |
Tai W, Xu H, Ravi A, Lakdawala H, Bochobza-Degani O, Carley LR, Palaskas Y. A transformer-combined 31.5 dBm outphasing power amplifier in 45 nm LP CMOS with dynamic power control for back-off power efficiency enhancement Ieee Journal of Solid-State Circuits. 47: 1646-1658. DOI: 10.1109/Jssc.2012.2191674 |
0.375 |
|
2011 |
Xu H, Palaskas Y, Ravi A, Sajadieh M, El-Tanani MA, Soumyanath K. A Flip-Chip-Packaged 25.3 dBm Class-D Outphasing Power Amplifier in 32 nm CMOS for WLAN Application Ieee Journal of Solid-State Circuits. 46: 1596-1605. DOI: 10.1109/Jssc.2011.2143930 |
0.378 |
|
2006 |
Xu H, Gao S, Heikman S, Long SI, Mishra UK, York RA. A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz Ieee Microwave and Wireless Components Letters. 16: 22-24. DOI: 10.1109/Lmwc.2005.861355 |
0.588 |
|
2006 |
Gao S, Xu H, Heikman S, Mishra UK, York RA. Two-stage quasi-class-E power amplifier in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 16: 28-30. DOI: 10.1109/Lmwc.2005.861353 |
0.597 |
|
2006 |
Sanabria C, Chakraborty A, Xu H, Rodwell MJ, Mishra UK, York RA. The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs Ieee Electron Device Letters. 27: 19-21. DOI: 10.1109/Led.2005.860889 |
0.756 |
|
2006 |
Xu H, Pervez NK, York RA. Tunable microwave integrated circuits using BST thin film capacitors with device structure optimization Integrated Ferroelectrics. 77: 27-35. DOI: 10.1080/10584580500413681 |
0.762 |
|
2005 |
Sanabria C, Xu H, Palacios T, Chakraborty A, Heikman S, Mishra UK, York RA. Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs Ieee Transactions On Microwave Theory and Techniques. 53: 762-768. DOI: 10.1109/Tmtt.2004.840578 |
0.742 |
|
2005 |
Sanabria C, Xu H, Heikman S, Mishra UK, York RA. A GaN differential oscillator with improved harmonic performance Ieee Microwave and Wireless Components Letters. 15: 463-465. DOI: 10.1109/Lmwc.2005.851563 |
0.758 |
|
2004 |
Xu H, Sanabria C, Chini A, Wei Y, Heikman S, Keller S, Mishra UK, York RA. A new field-plated GaN HEMT structure with improved power and noise performance International Journal of High Speed Electronics and Systems. 14: 810-815. DOI: 10.1142/S0129156404002879 |
0.745 |
|
2004 |
Xu H, Sanabria C, Chini A, Keller S, Mishra UK, York RA. A C-band high-dynamic range GaN HEMT low-noise amplifier Ieee Microwave and Wireless Components Letters. 14: 262-264. DOI: 10.1109/Lmwc.2004.828020 |
0.772 |
|
2004 |
Xu H, Pervez NK, Hansen PJ, Shen L, Keller S, Mishra UK, York RA. Integration of BaxSr1-xTiO3 Thin Films with AlGaN/GaN HEMT Circuits Ieee Electron Device Letters. 25: 49-51. DOI: 10.1109/Led.2003.822672 |
0.738 |
|
2003 |
Xu H, Pervez NK, Hansen PJ, Sanabria C, Shen L, Keller S, Mishra UK, York RA. Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits Ieee Electron Device Letters. 25: 273-278. DOI: 10.1109/Edmo.2003.1260077 |
0.719 |
|
2002 |
Serraiocco J, Acikel B, Hansen P, Taylor T, Xu H, Speck JS, York RA. Tunable passive integrated circuits using BST thin films Integrated Ferroelectrics. 49: 161-170. DOI: 10.1080/10584580215481 |
0.732 |
|
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