| Year |
Citation |
Score |
| 2020 |
Esmaielpour H, Dorman KR, Ferry DK, Mishima TD, Santos MB, Whiteside VR, Sellers IR. Exploiting intervalley scattering to harness hot carriers in III–V solar cells Nature Energy. 5: 336-343. DOI: 10.1038/S41560-020-0602-0 |
0.347 |
|
| 2019 |
Yang K, Uddin MM, Nagase K, Mishima TD, Santos MB, Hirayama Y, Yang Z, Liu H. Pump-probe nuclear spin relaxation study of the quantum Hall ferromagnet at filling factor ν = 2 New Journal of Physics. 21: 83004. DOI: 10.1088/1367-2630/Ab34Ce |
0.345 |
|
| 2019 |
Huang W, Rassel SS, Li L, Massengale JA, Yang RQ, Mishima TD, Santos MB. A unified figure of merit for interband and intersubband cascade devices Infrared Physics & Technology. 96: 298-302. DOI: 10.1016/J.Infrared.2018.11.033 |
0.35 |
|
| 2018 |
Esmaielpour H, Whiteside VR, Piyathilaka HP, Vijeyaragunathan S, Wang B, Adcock-Smith E, Roberts KP, Mishima TD, Santos MB, Bristow AD, Sellers IR. Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling. Scientific Reports. 8: 12473. PMID 30127507 DOI: 10.1038/S41598-018-30894-9 |
0.425 |
|
| 2018 |
Cheng Y, Meleco AJ, Roeth AJ, Whiteside VR, Debnath MC, Mishima TD, Santos MB, Hatch S, Liu H, Sellers IR. An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs $_{1-x}$ Sb $_{x}$ Quantum Dot Solar Cells Ieee Journal of Photovoltaics. 8: 487-492. DOI: 10.1109/Jphotov.2017.2779325 |
0.394 |
|
| 2018 |
Huang W, Lei L, Li L, Massengale JA, Yang RQ, Mishima TD, Santos MB. Enhanced collection efficiencies and performance of interband cascade structures for narrow bandgap semiconductor thermophotovoltaic devices Journal of Applied Physics. 124: 023101. DOI: 10.1063/1.5030904 |
0.343 |
|
| 2018 |
Huang W, Li L, Lei L, Massengale JA, Ye H, Yang RQ, Mishima TD, Santos MB. Minority carrier lifetime in mid-wavelength interband cascade infrared photodetectors Applied Physics Letters. 112: 251107. DOI: 10.1063/1.5030544 |
0.342 |
|
| 2018 |
Huang W, Li L, Lei L, Massengale JA, Yang RQ, Mishima TD, Santos MB. Electrical gain in interband cascade infrared photodetectors Journal of Applied Physics. 123: 113104. DOI: 10.1063/1.5019019 |
0.312 |
|
| 2017 |
Yang K, Nagase K, Hirayama Y, Mishima TD, Santos MB, Liu H. Role of chiral quantum Hall edge states in nuclear spin polarization. Nature Communications. 8: 15084. PMID 28425462 DOI: 10.1038/Ncomms15084 |
0.317 |
|
| 2017 |
Lei L, Li L, Ye H, Lotfi H, Yang RQ, Johnson MB, Massengale JA, Mishima TD, Santos MB. Long-wavelength interband cascade infrared photodetectors towards high temperature operation Proceedings of Spie. 10111: 1011113. DOI: 10.1117/12.2252566 |
0.325 |
|
| 2017 |
Lei L, Li L, Lotfi H, Ye H, Yang RQ, Mishima TD, Santos MB, Johnson MB. Midwavelength interband cascade infrared photodetectors with superlattice absorbers and gain Optical Engineering. 57: 1. DOI: 10.1117/1.Oe.57.1.011006 |
0.365 |
|
| 2017 |
Savich GR, Sidor DE, Du X, Wicks GW, Debnath MC, Mishima TD, Santos MB, Golding TD, Jain M, Craig AP, Marshall ARJ. III-V semiconductor extended short-wave infrared detectors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B105. DOI: 10.1116/1.4975340 |
0.31 |
|
| 2017 |
Lei L, Li L, Huang W, Massengale JA, Ye H, Lotfi H, Yang RQ, Mishima TD, Santos MB, Johnson MB. Resonant tunneling and multiple negative differential conductance features in long wavelength interband cascade infrared photodetectors Applied Physics Letters. 111: 113504. DOI: 10.1063/1.4994858 |
0.349 |
|
| 2017 |
Huang W, Lei L, Li L, Massengale JA, Yang RQ, Mishima TD, Santos MB. Current-matching versus non-current-matching in long wavelength interband cascade infrared photodetectors Journal of Applied Physics. 122: 083102. DOI: 10.1063/1.4989382 |
0.301 |
|
| 2016 |
Lotfi H, Li L, Lei L, Ye H, Rassel SS, Jiang Y, Yang RQ, Klem JF, Mishima TD, Santos MB, Johnson MB, Gupta JA. Recent developments in interband cascade infrared photodetectors Proceedings of Spie - the International Society For Optical Engineering. 9819. DOI: 10.1117/12.2235086 |
0.312 |
|
| 2016 |
Debnath MC, Mishima TD, Santos MB, Cheng Y, Whiteside VR, Sellers IR, Hossain K, Laghumavarapu RB, Liang BL, Huffaker DL. High-density InAs/GaAs1- xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells Journal of Applied Physics. 119. DOI: 10.1063/1.4943631 |
0.361 |
|
| 2016 |
Esmaielpour H, Whiteside VR, Tang J, Vijeyaragunathan S, Mishima TD, Cairns S, Santos MB, Wang B, Sellers IR. Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAsxSb1 - X quantum wells: A practical route to hot carrier solar cells Progress in Photovoltaics: Research and Applications. 24: 591-599. DOI: 10.1002/Pip.2763 |
0.412 |
|
| 2015 |
Jiang Y, Li L, Ye H, Yang RQ, Mishima TD, Santos MB, Johnson MB, Feng DJY, Choa FS. InAs-Based Single-Mode Distributed Feedback Interband Cascade Lasers Ieee Journal of Quantum Electronics. 51. DOI: 10.1109/Jqe.2015.2470534 |
0.318 |
|
| 2015 |
Ye H, Li L, Lotfi H, Lei L, Yang RQ, Keay JC, Mishima TD, Santos MB, Johnson MB. Molecular beam epitaxy of interband cascade structures with InAs/GaSb superlattice absorbers for long-wavelength infrared detection Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105029 |
0.464 |
|
| 2015 |
Li L, Jiang Y, Ye H, Yang RQ, Mishima TD, Santos MB, Johnson MB. Low-threshold InAs-based interband cascade lasers operating at high temperatures Applied Physics Letters. 106: 251102. DOI: 10.1063/1.4922995 |
0.332 |
|
| 2015 |
Kasturiarachchi T, Saha D, Pan X, Sanders GD, Edirisooriya M, Mishima TD, Doezema RE, Stanton CJ, Santos MB. Interband magneto-spectroscopy in InSb square and parabolic quantum wells Journal of Applied Physics. 117. DOI: 10.1063/1.4921293 |
0.709 |
|
| 2015 |
Li L, Ye H, Jiang Y, Yang RQ, Keay JC, Mishima TD, Santos MB, Johnson MB. MBE-grown long-wavelength interband cascade lasers on InAs substrates Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.016 |
0.339 |
|
| 2015 |
Lotfi H, Li L, Ye H, Hinkey RT, Lei L, Yang RQ, Keay JC, Mishima TD, Santos MB, Johnson MB. Interband cascade infrared photodetectors with long and very-long cutoff wavelengths Infrared Physics and Technology. 70: 162-167. DOI: 10.1016/J.Infrared.2014.08.017 |
0.324 |
|
| 2014 |
Debnath MC, Mishima TD, Santos MB, Phinney LC, Golding TD, Hossain K. High electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-on-insulator substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4866397 |
0.48 |
|
| 2014 |
Ye H, Lotfi H, Li L, Hinkey RT, Yang RQ, Lei L, Keay JC, Johnson MB, Mishima TD, Santos MB. Multistage interband cascade photovoltaic devices with a bandgap of 0.23 eV operating above room temperature Chinese Science Bulletin. 1-6. DOI: 10.1007/S11434-014-0144-6 |
0.364 |
|
| 2013 |
Hinkey RT, Lotfi H, Li L, Ye H, Lei L, Yang RQ, Keay JC, Mishima TD, Santos MB, Johnson MB. Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers Proceedings of Spie - the International Society For Optical Engineering. 8868. DOI: 10.1117/12.2024521 |
0.334 |
|
| 2013 |
Yang RQ, Li L, Zhao L, Jiang Y, Tian Z, Ye H, Hinkey RT, Niu C, Mishima TD, Santos MB, Keay JC, Johnson MB, Mansour K. Recent progress in development of inas-based interband cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 8640. DOI: 10.1117/12.2005271 |
0.404 |
|
| 2013 |
Ye H, Li L, Hinkey RT, Yang RQ, Mishima TD, Keay JC, Santos MB, Johnson MB. MBE growth optimization of InAs (001) homoepitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4804397 |
0.39 |
|
| 2013 |
Gaspe CK, Cairns S, Lei L, Wickramasinghe KS, Mishima TD, Keay JC, Murphy SQ, Santos MB. Epitaxial growth of elemental Sb quantum wells Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4802212 |
0.445 |
|
| 2012 |
Mishima TD, Santos MB. Regression Analysis for Transport Electron Scattering Caused by Structural Defects in InSb Quantum Wells: Application of Matthiessen's Formula Japanese Journal of Applied Physics. 51: 06FE07. DOI: 10.1143/Jjap.51.06Fe07 |
0.391 |
|
| 2012 |
Debnath MC, Mishima TD, Santos MB, Hossain K, Holland OW. Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates Journal of Applied Physics. 111: 073525. DOI: 10.1063/1.3702820 |
0.369 |
|
| 2011 |
Yang KF, Liu HW, Mishima TD, Santos MB, Nagase K, Hirayama Y. Nonlinear magnetic field dependence of spin polarization in high-density two-dimensional electron systems New Journal of Physics. 13: 83010. DOI: 10.1088/1367-2630/13/8/083010 |
0.304 |
|
| 2011 |
Hinkey RT, Tian Z, Yang RQ, Mishima TD, Santos MB. Reflectance spectrum of plasmon waveguide interband cascade lasers and observation of the Berreman effect Journal of Applied Physics. 110: 043113. DOI: 10.1063/1.3627172 |
0.36 |
|
| 2011 |
Mishima TD, Santos MB. Impact of structural defects upon electron mobility in InSb quantum wells Journal of Applied Physics. 109: 073707. DOI: 10.1063/1.3563587 |
0.325 |
|
| 2010 |
Khodaparast GA, Bhowmick M, Mishima TD, Santos MB, Feeser C, Wessels BW, Matsuda YH. Probe of coherent and quantum states in narrow-gap based semiconductors with strong spin-orbit coupling Proceedings of Spie. 7760. DOI: 10.1117/12.862183 |
0.378 |
|
| 2010 |
Mishima TD, Edirisooriya M, Santos MB. Dislocation-filtering AlInSb buffer layers for InSb quantum wellsAnalysis by high-tilt bright-field and dark-field TEM Physica E: Low-Dimensional Systems and Nanostructures. 42: 2777-2780. DOI: 10.1016/J.Physe.2010.01.005 |
0.757 |
|
| 2010 |
Mishima T, Santos M. Micro-twin Defects in InSb/AlInSb layers grown on (001) GaAs ∼ Application of the 〈1̄16〉-directional TEM analysis ∼ Physics Procedia. 3: 1373-1377. DOI: 10.1016/j.phpro.2010.01.194 |
0.341 |
|
| 2009 |
Frazier M, Cates JG, Waugh JA, Heremans JJ, Santos MB, Liu X, Khodaparast GA. Photoinduced spin-polarized current in InSb-based structures Journal of Applied Physics. 106. DOI: 10.1063/1.3262496 |
0.31 |
|
| 2009 |
Zhu F, Zhao H, Ok I, Kim HS, Yum J, Lee JC, Goel N, Tsai W, Gaspe CK, Santos MB. A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer Applied Physics Letters. 94: 013511. DOI: 10.1063/1.3068752 |
0.531 |
|
| 2009 |
Edirisooriya M, Mishima TD, Gaspe CK, Bottoms K, Hauenstein RJ, Santos MB. InSb quantum-well structures for electronic device applications Journal of Crystal Growth. 311: 1972-1975. DOI: 10.1016/J.Jcrysgro.2008.11.081 |
0.759 |
|
| 2008 |
Kim H, Ok I, Zhu F, Zhang M, Park S, Yum J, Zhao H, Majhi P, Garcia-Gutierrez DI, Goel N, Tsai W, Gaspe CK, Santos MB, Lee JC. High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer Applied Physics Letters. 93: 132902. DOI: 10.1063/1.2990645 |
0.487 |
|
| 2008 |
Kim H, Ok I, Zhang M, Zhu F, Park S, Yum J, Zhao H, Lee JC, Majhi P, Goel N, Tsai W, Gaspe CK, Santos MB. A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer Applied Physics Letters. 93: 062111. DOI: 10.1063/1.2972107 |
0.506 |
|
| 2008 |
Koveshnikov S, Goel N, Majhi P, Wen H, Santos MB, Oktyabrsky S, Tokranov V, Kambhampati R, Moore R, Zhu F, Lee J, Tsai W. In0.53Ga0.47 As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm Applied Physics Letters. 92. DOI: 10.1063/1.2931031 |
0.503 |
|
| 2008 |
Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Zhao H, Garcia D, Majhi P, Goel N, Tsai W, Gaspe CK, Santos MB, Lee JC. Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer Applied Physics Letters. 92: 202903. DOI: 10.1063/1.2920438 |
0.498 |
|
| 2008 |
Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Zhao H, Garcia D, Majhi P, Goel N, Tsai W, Gaspe CK, Santos MB, Lee JC. Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition Applied Physics Letters. 92: 112904. DOI: 10.1063/1.2844879 |
0.442 |
|
| 2008 |
Mishima TD, Edirisooriya M, Santos MB. Micro-twin induced structural misalignment in InSb quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2775-2777. DOI: 10.1002/Pssc.200779274 |
0.683 |
|
| 2007 |
Edirisooriya M, Mishima TD, Santos MB. Effect of Al composition on filtering of threading dislocations by Alx In1-x Sb Aly In1-y Sb heterostructures grown on GaAs (001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1063-1065. DOI: 10.1116/1.2740271 |
0.754 |
|
| 2007 |
Goel N, Tsai W, Garner CM, Sun Y, Pianetta P, Warusawithana M, Schlom DG, Wen H, Gaspe C, Keay JC, Santos MB, Goncharova LV, Garfunkel E, Gustafsson T. Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As Applied Physics Letters. 91. DOI: 10.1063/1.2783264 |
0.483 |
|
| 2007 |
Goel N, Majhi P, Tsai W, Warusawithana M, Schlom DG, Santos MB, Harris JS, Nishi Y. High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2776846 |
0.513 |
|
| 2007 |
Mishima TD, Edirisooriya M, Santos MB. Reduction of microtwin defects for high-electron-mobility InSb quantum wells Applied Physics Letters. 91. DOI: 10.1063/1.2768033 |
0.736 |
|
| 2006 |
Mishima TD, Edirisooriya M, Goel N, Santos MB. Dislocation filtering by AlxIn1-xSb/Al yIn1-y Sb interfaces for InSb-based devices grown on GaAs (001) substrates Applied Physics Letters. 88. DOI: 10.1063/1.2203223 |
0.76 |
|
| 2006 |
Dedigama AR, Deen D, Murphy SQ, Goel N, Keay JC, Santos MB, Suzuki K, Miyashita S, Hirayama Y. Current focusing in InSb heterostructures Physica E: Low-Dimensional Systems and Nanostructures. 34: 647-650. DOI: 10.1016/J.Physe.2006.03.050 |
0.544 |
|
| 2006 |
Mishima TD, Edirisooriya M, Santos MB. Dislocation filtering at the interfaces between AlxIn 1-xSb and AlyIn1-ySb layers Physica B: Condensed Matter. 376: 591-594. DOI: 10.1016/J.Physb.2005.12.149 |
0.728 |
|
| 2005 |
Chakrabarti S, Holub MA, Bhattacharya P, Mishima TD, Santos MB, Johnson MB, Blom DA. Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner. Nano Letters. 5: 209-12. PMID 15794597 DOI: 10.1021/Nl048613N |
0.379 |
|
| 2005 |
Mishima TD, Edirisooriya M, Santos MB. Structural Defects in InSb Quantum Wells Grown on GaAs (001) Substrates via Al0.09In0.91Sb/GaSb-AlSb Strained Layer Superlattice/AlSb/GaSb Buffer Layers Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee01-11 |
0.762 |
|
| 2005 |
Mishima TD, Keay JC, Goel N, Ball MA, Chung SJ, Johnson MB, Santos MB. Effect of micro-twin defects on InSb quantum wells Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1171-1173. DOI: 10.1116/1.1914822 |
0.601 |
|
| 2004 |
Larrabee DC, Khodaparast GA, Tittel FK, Kono J, Scalari G, Ajili L, Faist J, Beere H, Davies G, Linfield E, Ritchie D, Nakajima Y, Nakai M, Sasa S, Inoue M, ... ... Santos MB, et al. Application of terahertz quantum-cascade lasers to semiconductor cyclotron resonance. Optics Letters. 29: 122-4. PMID 14719681 DOI: 10.1364/Ol.29.000122 |
0.346 |
|
| 2004 |
Mishima TD, Santos MB. Effect of buffer layer on InSb quantum wells grown on GaAs (001) substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 1472. DOI: 10.1116/1.1699340 |
0.369 |
|
| 2004 |
Mishima TD, Keay JC, Goel N, Ball MA, Chung SJ, Johnson MB, Santos MB. Structural defects in InSb/AlxIn1-xSb quantum wells grown on GaAs (0 0 1) substrates Physica E: Low-Dimensional Systems and Nanostructures. 21: 770-773. DOI: 10.1016/j.physe.2003.11.129 |
0.608 |
|
| 2004 |
Mishima TD, Keay JC, Goel N, Ball MA, Chung SJ, Johnson MB, Santos MB. Effect of structural defects on InSb/AlxIn1-x Sb quantum wells grown on GaAs (0 0 1) substrates Physica E: Low-Dimensional Systems and Nanostructures. 20: 260-263. DOI: 10.1016/j.physe.2003.08.014 |
0.552 |
|
| 2002 |
Solin SA, Hines DR, Tsai JS, Pashkin YA, Chung SJ, Goel N, Santos MB. Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites: Application to read-head sensors for ultrahigh-density magnetic recording Ieee Transactions On Magnetics. 38: 89-94. DOI: 10.1109/Tmag.2002.988917 |
0.481 |
|
| 2002 |
Solin SA, Hines DR, Rowe ACH, Tsai JS, Pashkin YA, Chung SJ, Goel N, Santos MB. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording Applied Physics Letters. 80: 4012-4014. DOI: 10.1063/1.1481238 |
0.442 |
|
| 2000 |
Chung SJ, Ball MA, Lindstrom SC, Johnson MB, Santos MB. Improving the surface morphology of InSb quantum-well structures on GaAs substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1583-1585. DOI: 10.1116/1.591431 |
0.366 |
|
| 1996 |
Goldammer KJ, Liu WK, Ma W, Santos MB, Hauenstein RJ, O'steen ML. MBE Growth and Characterization of InSb/AlxIn1−xSb Strained Layer Structures Mrs Proceedings. 450. DOI: 10.1557/Proc-450-97 |
0.385 |
|
| 1996 |
Fang X, Liu W, Shan W, Chatterjee T, Mccann P, Santos M, Song J. Optical Characterization of Europium-Doped Calcium Fluoride Thin Films Grown on Silicon by Molecular Beam Epitaxy Mrs Proceedings. 446. DOI: 10.1557/Proc-446-429 |
0.312 |
|
| 1994 |
Froberg NM, Johnson AM, Goossen KW, Cunningham JE, Santos MB, Jan WY, Wood TH, Burrus CA. Picosecond carrier escape by resonant tunneling in pseudomorphic InGaAs/GaAsP quantum well modulators Applied Physics Letters. 64: 1705-1707. DOI: 10.1063/1.111840 |
0.321 |
|
| 1989 |
Sajoto T, Santos M, Heremans JJ, Shayegan M, Heiblum M, Weckwerth MV, Meirav U. Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s Applied Physics Letters. 54: 840-842. DOI: 10.1063/1.100862 |
0.362 |
|
| Show low-probability matches. |