Nelson Y. Garces, Ph.D. - Publications

Affiliations: 
2000 West Virginia University, Morgantown, WV, United States 
Area:
Condensed Matter Physics, Optics Physics

74 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Robinson ZR, Jernigan GG, Bussmann KM, Nyakiti LO, Garces NY, Nath A, Wheeler VD, Myers-Ward RL, Kurt Gaskill D, Eddy CR. Graphene growth on SiC(000-1): Optimization of surface preparation and growth conditions Proceedings of Spie - the International Society For Optical Engineering. 9552. DOI: 10.1117/12.2191616  0.76
2015 Hossain T, Wei D, Edgar JH, Garces NY, Nepal N, Hite JK, Mastro MA, Eddy CR, Meyer HM. Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931793  0.76
2015 Robinson ZR, Jernigan GG, Currie M, Hite JK, Bussmann KM, Nyakiti LO, Garces NY, Nath A, Rao MV, Wheeler VD, Myers-Ward RL, Wollmershauser JA, Feigelson BN, Eddy CR, Gaskill DK. Challenges to graphene growth on SiC(0001): Substrate effects, hydrogen etching and growth ambient Carbon. 81: 73-82. DOI: 10.1016/j.carbon.2014.09.025  0.76
2014 Hite JK, Garces NY, Goswami R, Mastro MA, Kub FJ, Eddy CR. Selective switching of GaN polarity on Ga-polar GaN using atomic layer deposited Al2O3 Applied Physics Express. 7. DOI: 10.7567/APEX.7.025502  0.76
2014 Garces NY, Meyer DJ, Wheeler VD, Liliental-Weber Z, Gaskill DK, Eddy CR. Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4818254  0.76
2014 Nath A, Koehler AD, Jernigan GG, Wheeler VD, Hite JK, Hernández SC, Robinson ZR, Garces NY, Myers-Ward RL, Eddy CR, Gaskill DK, Rao MV. Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process Applied Physics Letters. 104. DOI: 10.1063/1.4880937  0.76
2014 Wei D, Hossain T, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Edgar JH. Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 898-901. DOI: 10.1002/pssc.201300677  0.76
2014 Hossain T, Wei D, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Baker T, Mayo A, Schmitt J, Edgar JH. Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 565-568. DOI: 10.1002/pssc.201300659  0.76
2013 Wei D, Hossain T, Garces NY, Nepal N, Meyer HM, Kirkham MJ, Eddy CR, Edgar JH. Influence of atomic layer deposition temperatures on TiO2/n-Si MOS capacitor Ecs Journal of Solid State Science and Technology. 2: N110-N114. DOI: 10.1149/2.010305jss  0.76
2013 Currie M, Anderson T, Wheeler V, Nyakiti LO, Garces NY, Myers-Ward RL, Eddy CR, Kub FJ, Gaskill DK. Mode-locked 2-μm wavelength fiber laser using a graphene-saturable absorber Optical Engineering. 52. DOI: 10.1117/1.OE.52.7.076101  0.76
2012 Imhoff EA, Hobart KD, Kub FJ, Ancona MG, Myers-Ward RL, Garces NY, Wheeler VD, Nyakiti LO, Eddy CR, Gaskill DK. Positive temperature coefficient SiC PiN diodes Materials Science Forum. 717: 981-984. DOI: 10.4028/www.scientific.net/MSF.717-720.981  0.76
2012 Nyakiti LO, Wheeler VD, Garces NY, Myers-Ward RL, Eddy CR, Gaskill DK. Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene Mrs Bulletin. 37: 1149-1157. DOI: 10.1557/mrs.2012.180  0.76
2012 Garces NY, Wheeler VD, Gaskill DK. Graphene functionalization and seeding for dielectric deposition and device integration Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3693416  0.76
2012 Freitas JA, Mastro MA, Glaser ER, Garces NY, Lee SK, Chung JH, Oh DK, Shim KB. Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy Journal of Crystal Growth. 350: 27-32. DOI: 10.1016/j.jcrysgro.2011.12.017  0.76
2012 Garces NY, Wheeler VD, Gaskill DK. Atomic layer deposition of dielectrics on graphene Graphene Nanoelectronics: From Materials to Circuits. 2147483647: 235-257. DOI: 10.1007/978-1-4614-0548-1_9  0.76
2012 Meyer DJ, Katzer DS, Bass R, Garces NY, Ancona MG, Deen DA, Storm DF, Binari SC. N-polar n + GaN cap development for low ohmic contact resistance to inverted HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 894-897. DOI: 10.1002/pssc.201100431  0.76
2011 Gaskill DK, Hite JK, Culbertson JC, Jernigan GG, Tedesco JL, Nyakiti LO, Wheeler VD, Myers-Ward RL, Garces NY, Eddy CR. Observations on C-face SiC graphene growth in argon Materials Science Forum. 679: 789-792. DOI: 10.4028/www.scientific.net/MSF.679-680.789  0.76
2011 Nepal N, Garces NY, Meyer DJ, Hite JK, Mastro MA, Eddy CR. Assessment of GaN surface pretreatment for atomic layer deposited high-K dielectrics Applied Physics Express. 4. DOI: 10.1143/APEX.4.055802  0.76
2011 Garces NY, Wheeler VD, Hite JK, Jernigan GG, Tedesco JL, Nepal N, Eddy CR, Gaskill DK. Epitaxial graphene surface preparation for atomic layer deposition of Al 2O 3 Journal of Applied Physics. 109. DOI: 10.1063/1.3596761  0.76
2010 Glembocki OJ, Gowda M, Geng S, Prokes SM, Garces NY, Cushen J, Caldwell JD. Cysteamine coated Ag and Au nanorods for improved surface enhanced Raman scattering from dinitrotoluene and trinitrotoluene Proceedings of Spie - the International Society For Optical Engineering. 7757. DOI: 10.1117/12.860314  0.76
2010 Freitas JA, Tischler JG, Garces NY, Feigelson BN. Optical probing of low-pressure solution grown GaN crystal properties Journal of Crystal Growth. 312: 2564-2568. DOI: 10.1016/j.jcrysgro.2010.04.013  0.76
2010 Garces NY, Feigelson BN, Freitas JA, Kim J, Myers-Ward R, Glaser ER. Characterization of bulk GaN crystals grown from solution at near atmospheric pressure Journal of Crystal Growth. 312: 2558-2563. DOI: 10.1016/j.jcrysgro.2010.04.012  0.76
2010 Feigelson BN, Hite JK, Garces NY, Freitas JA, Tischler JG, Klein PB. GaN single crystals of different habit grown from solution at near atmospheric pressure Journal of Crystal Growth. 312: 2551-2557. DOI: 10.1016/j.jcrysgro.2010.04.011  0.76
2009 Glaser ER, Garces NY, Caldwell JD, Carlos WE, Zvanut ME, Magnusson B, Hansen DM, Chung G, Loboda MJ. Infrared PL signatures of n-type bulk sic substrates with nitrogen impurity concentration between 1016and 1017cm-3 Materials Science Forum. 600: 449-452. DOI: 10.4028/www.scientific.net/MSF.600-603.449  0.76
2009 Maximenko SI, Freitas JA, Garces NY, Glaser ER, Fanto M. Evolution of D1-defect center in 4H-SiC during high temperature annealing Materials Science Forum. 600: 429-432. DOI: 10.4028/www.scientific.net/MSF.600-603.429  0.76
2009 Zvanut ME, Ngetich G, Chung HJ, Polyakov AY, Skowronski M, Garces NY, Glaser ER. Defect level of the carbon vacancy-carbon antisite pair center in Si 4H SiC Materials Science Forum. 600: 385-388. DOI: 10.4028/www.scientific.net/MSF.600-603.385  0.76
2009 Glaser ER, Garces NY, Caldwell JD, Carlos WE, Zvanut ME, Magnusson B, Hansen DM, Chung G, Loboda MJ. Infrared PL signatures of n-type bulk SiC substrates with nitrogen impurity concentration between 1016 and 1017 cm-3 Materials Science Forum. 600: 449-452. DOI: 10.4028/3-908453-11-9.449  0.76
2009 Maximenko SI, Freitas JA, Garces NY, Glaser ER, Fanton MA. Evolution of D1-defect center in 4H-SiC during high temperature annealing Materials Science Forum. 600: 429-432. DOI: 10.4028/3-908453-11-9.429  0.76
2009 Garces NY, Glaser ER, Carlos WE, Fanton MA. Behavior of native defects in semi-insulating 4H-SiC after high temperature anneals and different cool-down rates Materials Science Forum. 600: 389-392. DOI: 10.4028/3-908453-11-9.389  0.76
2009 Zvanut ME, Ngetich G, Dashdorj J, Garces NY, Glaser ER. Photoinduced behavior of the VC C Si - Pair defect in 4H -SiC grown by physical vapor transport and halide chemical vapor deposition Journal of Applied Physics. 106. DOI: 10.1063/1.3224892  0.76
2009 Maximenko SI, Freitas JA, Garces NY, Glaser ER, Fanton MA. Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing Journal of Electronic Materials. 38: 551-556. DOI: 10.1007/s11664-008-0607-0  0.76
2009 Jadwisienczak WM, Ramadan S, Thomas T, Spencer MG, Garces NY, Glaser ER, Wisniewski K. Luminescence and excitation mechanisms of Eu-doped GaN phosphors Materials Research Society Symposium Proceedings. 1111: 37-42.  0.76
2007 Garces NY, Glaser ER, Carlos WE, Fanton MA. Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments Physica B: Condensed Matter. 401: 77-80. DOI: 10.1016/j.physb.2007.08.117  0.76
2007 Garces NY, Carlos WE, Glaser ER, Fanton MA. Identification of a three-site defect in semi-insulating 4H-SiC Journal of Electronic Materials. 36: 268-271. DOI: 10.1007/s11664-006-0043-y  0.76
2006 Carlos WE, Garces NY, Glaser ER, Fanton MA. Annealing of multivacancy defects in 4H-SiC Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/PhysRevB.74.235201  0.76
2006 Luo M, Garces NY, Giles NC, Roy UN, Cui Y, Burger A. Optical and electron paramagnetic resonance spectroscopies of diffusion-doped Co 2+: ZnSe Journal of Applied Physics. 99. DOI: 10.1063/1.2188030  0.76
2006 Evans SM, Garces NY, DeMattei RC, Feigelson RS, Zawilski KT, Giles NC, Halliburton LE. Electron paramagnetic resonance and electron-nuclear double resonance study of Mn2+ ions in CdGeAs2 crystals Physica Status Solidi (B) Basic Research. 243: 4070-4079. DOI: 10.1002/pssb.200541162  0.76
2006 Carlos WE, Glaser ER, Garces NY, Shanabrook BV, Fanton MA. Thermal evolution of defects in semi-insulating 4H SiC Materials Science Forum. 527: 531-534.  0.76
2006 Garces NY, Carlos WE, Glaser ER, Huh SW, Jae H, Chung SN, Polyakov AY, Skowronski M. Relationship between the EPR SI-5 signal and the 0.65 eV electron trap in 4H- and 6H-SiC polytypes Materials Science Forum. 527: 547-550.  0.76
2005 Garces NY, Halliburton LE, Schunemann PG, Setzler SD. Electron-nuclear double-resonance study of Mn2+ ions in ZnGeP2 crystals Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/PhysRevB.72.033202  0.76
2005 Halliburton LE, Giles NC, Garces NY, Luo M, Xu C, Bai L, Boatner LA. Production of native donors in ZnO by annealing at high temperature in Zn vapor Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117630  0.76
2005 Strzhemechny YM, Mosbacker HL, Goss SH, Look DC, Reynolds DC, Litton CW, Garces NY, Giles NC, Halliburton LE, Niki S, Brillson LJ. Shallow donor generation in ZnO by remote hydrogen plasma Journal of Electronic Materials. 34: 399-403.  0.76
2004 Bai L, Garces NY, Xu C, Halliburton LE, Giles NC, Shunemann PG, Nagashio K, Yang C, Feigelson RS. Effect of donors and acceptors on the optical properties of CdGeAs 2 Proceedings of Spie - the International Society For Optical Engineering. 5337: 22-29. DOI: 10.1117/12.528547  0.76
2004 Giles NC, Bai L, Garces NY, Pollak TM, Schunemann PG. Assignment of infrared absorption bands in ZnGeP2 Proceedings of Spie - the International Society For Optical Engineering. 5337: 11-21. DOI: 10.1117/12.528279  0.76
2004 Giles NC, Garces NY, Wang L, Halliburton LE. Photoluminescence and EPR of donors and acceptors in ZnO Proceedings of Spie - the International Society For Optical Engineering. 5359: 267-278. DOI: 10.1117/12.528094  0.76
2004 Garces NY, Stevens KT, Foundos GK, Halliburton LE. Electron paramagnetic resonance and optical absorption study of V 4+ centres in YVO4 crystals Journal of Physics Condensed Matter. 16: 7095-7106. DOI: 10.1088/0953-8984/16/39/040  0.76
2004 Stevens KT, Garces NY, Bai L, Giles NC, Halliburton LE, Setzlier SD, Schunemann PG, Pollak TM, Route RK, Feigelson RS. Optical absorption and electron-nuclear double resonance study of Ni + ions in AgGaSe2 crystals Journal of Physics Condensed Matter. 16: 2593-2607. DOI: 10.1088/0953-8984/16/15/011  0.76
2004 Halliburton LE, Wang L, Bai L, Garces NY, Giles NC, Callahan MJ, Wang B. Infrared absorption from OH - ions adjacent to lithium acceptors in hydrothermally grown ZnO Journal of Applied Physics. 96: 7168-7172. DOI: 10.1063/1.1806531  0.76
2004 Strzhemechny YM, Mosbacker HL, Look DC, Reynolds DC, Litton CW, Garces NY, Giles NC, Halliburton LE, Niki S, Brillson LJ. Remote hydrogen plasma doping of single crystal ZnO Applied Physics Letters. 84: 2545-2547. DOI: 10.1063/1.1695440  0.76
2003 Hong W, Garces NY, Chirila MM, Halliburton LE. Identification of point defects responsible for laser-induced ultraviolet absorption in LiB3O5 (LBO) crystals Proceedings of Spie - the International Society For Optical Engineering. 4932: 309-318. DOI: 10.1117/12.472429  0.76
2003 Garces NY, Giles NC, Halliburton LE, Nagashio K, Feigelson RS, Schunemann PG. Electron paramagnetic resonance of Cr 2+ and Cr 4+ ions in CdGeAs 2 crystals Journal of Applied Physics. 94: 7567-7570. DOI: 10.1063/1.1629802  0.76
2003 Chirila MM, Garces NY, Halliburton LE, Demos SG, Land TA, Radousky HB. Production and thermal decay of radiation-induced point defects in KD 2PO 4 crystals Journal of Applied Physics. 94: 6456-6462. DOI: 10.1063/1.1620680  0.76
2003 Chirila MM, Garces NY, Halliburton LE, Evans DR, Route RK, Fejer MM. Thermally stimulated luminescence from vapor-transport-equilibrated LiTaO3 crystals Journal of Applied Physics. 94: 301-306. DOI: 10.1063/1.1580643  0.76
2003 Garces NY, Wang L, Giles NC, Halliburton LE, Cantwell G, Eason DB. Molecular nitrogen (N2-) acceptors and isolated nitrogen (N-) acceptors in ZnO crystals Journal of Applied Physics. 94: 519-524. DOI: 10.1063/1.1580193  0.76
2003 Giles NC, Bai L, Chirila MM, Garces NY, Stevens KT, Schunemann PG, Setzler SD, Pollak TM. Infrared absorption bands associated with native defects in ZnGeP2 Journal of Applied Physics. 93: 8975-8981. DOI: 10.1063/1.1572195  0.76
2003 Garces NY, Chirila MM, Murphy HJ, Foise JW, Thomas EA, Wicks C, Grencewicz K, Halliburton LE, Giles NC. Absorption, luminescence, and electron paramagnetic resonance of molybdenum ions in CdWO4 Journal of Physics and Chemistry of Solids. 64: 1195-1200. DOI: 10.1016/S0022-3697(03)00049-0  0.76
2003 Look DC, Jones RL, Sizelove JR, Garces NY, Giles NC, Halliburton LE. The path to ZnO devices: Donor and acceptor dynamics Physica Status Solidi (a) Applied Research. 195: 171-177. DOI: 10.1002/pssa.200306274  0.76
2003 Wang L, Garces NY, Halliburton LE, Giles NC. Determination of the nitrogen acceptor ionization energy in zinc oxide by photoluminescence spectroscopy Materials Research Society Symposium - Proceedings. 799: 261-266.  0.76
2003 Hong W, Chirila MM, Garces NY, Halliburton LE, Lupinski D, Villeval P. Electron paramagnetic resonance and electron-nuclear double resonance study of trapped-hole centers in LiB3O5 crystals Physical Review B - Condensed Matter and Materials Physics. 68: 941111-941119.  0.76
2003 Garces NY, Wang L, Giles NC, Halliburton LE, Look DC, Reynolds DC. Thermal diffusion of lithium acceptors into ZnO crystals Journal of Electronic Materials. 32: 766-771.  0.76
2002 Garces NY, Wang L, Bai L, Giles NC, Halliburton LE, Cantwell G. Role of copper in the green luminescence from ZnO crystals Applied Physics Letters. 81: 622-624. DOI: 10.1063/1.1494125  0.76
2002 Chirila MM, Garces NY, Halliburton LE, Evans DR, Basun SA, Meltzer RS, Yen WM, Rutkowski SA, Shumov D, Cahill JS. Thermoluminescence study of stoichiometric LiNbO 3 crystals Journal of Applied Physics. 92: 1221-1226. DOI: 10.1063/1.1487452  0.76
2002 Wang L, Bai L, Stevens KT, Garces NY, Giles NC, Setzler SD, Schunemann PG, Pollak TM. Luminescence associated with copper in ZnGeP 2 Journal of Applied Physics. 92: 77-81. DOI: 10.1063/1.1481971  0.76
2002 Garces NY, Giles NC, Halliburton LE, Cantwell G, Eason DB, Reynolds DC, Look DC. Production of nitrogen acceptors in ZnO by thermal annealing Applied Physics Letters. 80: 1334-1336. DOI: 10.1063/1.1450041  0.76
2002 Garces NY, Halliburton LE, Stevens KT, Shone M, Foundos GK. Identification of silicon as the dominant hole trap in YVO 4 crystals Journal of Applied Physics. 91: 1354-1358. DOI: 10.1063/1.1428087  0.76
2002 Garces NY, Wang L, Chirila MM, Halliburton LE, Giles NC. Luminescence and EPR study of lithium-diffused ZnO crystals Materials Research Society Symposium - Proceedings. 744: 87-92.  0.76
2002 Bai L, Garces NY, Yang N, Schunemann PG, Setzler SD, Pollak TM, Halliburton LE, Giles NC. Optical and EPR study of defects in cadmium germanium arsenide Materials Research Society Symposium - Proceedings. 744: 537-542.  0.76
2001 Garces NY, Stevens KT, Halliburton LE, Demos SG, Radousky HB, Zaitseva NP. Identification of electron and hole traps in KH2PO4 crystals Journal of Applied Physics. 89: 47-52. DOI: 10.1063/1.1320030  0.76
2001 Garces NY, Stevens KT, Halliburton LE, Yan M, Zaitseva NP, DeYoreo JJ. Optical absorption and electron paramagnetic resonance of Fe ions in KDP crystals Journal of Crystal Growth. 225: 435-439. DOI: 10.1016/S0022-0248(01)00911-3  0.76
2000 Garces NY, Stevens KT, Halliburton LE. Electron paramagnetic resonance of platinum impurities in KTiOPO4 crystals Journal of Applied Physics. 87: 8682-8687.  0.76
2000 Chirila MM, Garces NY, Murphy HJ, Wicks C, Grencewicz K, Halliburton LE, Giles NC. Identification of trapping sites for OH- molecular ions in CdWO4 Journal of Physics and Chemistry of Solids. 61: 1871-1876.  0.76
1999 Murphy HJ, Stevens KT, Garces NY, Moldovan M, Giles NC, Halliburton LE. Optical and EPR characterization of point defects in bismuth-doped CdWO4 crystals Radiation Effects and Defects in Solids. 149: 273-278.  0.76
1999 Stevens KT, Garces NY, Halliburton LE, Yan M, Zaitseva NP, Deyoreo JJ, Catella GC, Luken JR. Identification of the intrinsic self-trapped hole center in KD2PO4 Applied Physics Letters. 75: 1503-1505.  0.76
1999 Giles NC, Rablau CI, Garces NY, Chattopadhyay K, Burger A, Cross E, Doty FP, James RB. Electron paramagnetic resonance investigation of donor impurities in CdZnTe grown by different techniques Proceedings of Spie - the International Society For Optical Engineering. 3768: 472-480.  0.76
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