Year |
Citation |
Score |
2022 |
Sadeghi A, Naghavi SMH, Mozafari M, Afshari E. Nanoscale biomaterials for terahertz imaging: A non-invasive approach for early cancer detection. Translational Oncology. 27: 101565. PMID 36343417 DOI: 10.1016/j.tranon.2022.101565 |
0.522 |
|
2020 |
Aghasi H, Naghavi SMH, Taba MT, Aseeri MA, Cathelin A, Afshari E. Terahertz electronics: Application of wave propagation and nonlinear processes Applied Physics Reviews. 7: 21302. DOI: 10.1063/1.5129403 |
0.38 |
|
2019 |
Khodabandeh M, Afshari E, Amirabadi M. A Family of Ćuk, Zeta, and SEPIC Based Soft-Switching DC–DC Converters Ieee Transactions On Power Electronics. 34: 9503-9519. DOI: 10.1109/Tpel.2019.2891563 |
0.34 |
|
2019 |
Khodabandeh M, Afshari E, Amirabadi M. A Single-Stage Soft-Switching High-Frequency AC-Link PV Inverter: Design, Analysis, and Evaluation of Si-Based and SiC-Based Prototypes Ieee Transactions On Power Electronics. 34: 2312-2326. DOI: 10.1109/Tpel.2018.2847242 |
0.502 |
|
2019 |
Afshari E, Khodabandeh M, Amirabadi M. A Single-Stage Capacitive AC-Link AC–AC Power Converter Ieee Transactions On Power Electronics. 34: 2104-2118. DOI: 10.1109/Tpel.2018.2841398 |
0.437 |
|
2019 |
Kashani MH, Tarkeshdouz A, Molavi R, Sheikholeslami A, Afshari E, Mirabbasi S. On the Design of a High-Performance mm-Wave VCO With Switchable Triple-Coupled Transformer Ieee Transactions On Microwave Theory and Techniques. 67: 4450-4464. DOI: 10.1109/Tmtt.2019.2938943 |
0.519 |
|
2019 |
Jiang C, Aseeri M, Cathelin A, Afshari E. A Fully On-Chip Frequency-Stabilization Mechanism for Terahertz Sources Eliminating Frequency Reference and Dividers Ieee Transactions On Microwave Theory and Techniques. 67: 2523-2536. DOI: 10.1109/Tmtt.2019.2912201 |
0.577 |
|
2019 |
Mostajeran A, Naghavi SM, Emadi M, Samala S, Ginsburg BP, Aseeri M, Afshari E. A High-Resolution 220-GHz Ultra-Wideband Fully Integrated ISAR Imaging System Ieee Transactions On Microwave Theory and Techniques. 67: 429-442. DOI: 10.1109/Tmtt.2018.2874666 |
0.452 |
|
2019 |
Haghi Kashani M, Tarkeshdouz A, Afshari E, Mirabbasi S. A 53–67 GHz Low-Noise Mixer-First Receiver Front-End in 65-nm CMOS Ieee Transactions On Circuits and Systems I: Regular Papers. 66: 2051-2063. DOI: 10.1109/Tcsi.2019.2895893 |
0.488 |
|
2019 |
Pourahmad V, Khoeini F, Afshari E. A System of Two Coupled Oscillators With a Continuously Controllable Phase Shift Ieee Transactions On Circuits and Systems I: Regular Papers. 66: 1531-1543. DOI: 10.1109/Tcsi.2018.2887239 |
0.426 |
|
2019 |
Naghavi SH, Taba MT, Han R, Aseeri MA, Cathelin A, Afshari E. Filling the Gap With Sand: When CMOS Reaches THz Ieee Solid-State Circuits Magazine. 11: 33-42. DOI: 10.1109/Mssc.2019.2922888 |
0.597 |
|
2018 |
Khatibi H, Khiyabani S, Afshari E. A 173 GHz Amplifier With a 18.5 dB Power Gain in a 130 nm SiGe Process: A Systematic Design of High-Gain Amplifiers Above $f_{\max }/2$ Ieee Transactions On Microwave Theory and Techniques. 66: 201-214. DOI: 10.1109/Tmtt.2017.2727038 |
0.554 |
|
2018 |
Aghasi H, Afshari E. An 88-GHz Compact Fundamental Oscillator With 19.4% DC-to-RF Efficiency and 7.5-dBm Output Power in 130-nm SiGe BiCMOS Ieee Solid-State Circuits Letters. 1: 106-109. DOI: 10.1109/LSSC.2018.2875832 |
0.469 |
|
2018 |
Tarkeshdouz A, Mostajeran A, Mirabbasi S, Afshari E. A 91-GHz Fundamental VCO With 6.1% DC-to-RF Efficiency and 4.5 dBm Output Power in 0.13-
$\mu$
m CMOS Ieee Solid-State Circuits Letters. 1: 102-105. DOI: 10.1109/LSSC.2018.2855434 |
0.4 |
|
2018 |
Khatibi H, Khiyabani S, Afshari E. A 183 GHz Desensitized Unbalanced Cascode Amplifier With 9.5-dB Power Gain and 10-GHz Band Width and −2 dBm Saturation Power Ieee Solid-State Circuits Letters. 1: 58-61. DOI: 10.1109/LSSC.2018.2827879 |
0.41 |
|
2018 |
Rahimi R, Farhangi S, Farhangi B, Moradi GR, Afshari E, Blaabjerg F. H8 Inverter to Reduce Leakage Current in Transformerless Three-Phase Grid-Connected Photovoltaic systems Ieee Journal of Emerging and Selected Topics in Power Electronics. 6: 910-918. DOI: 10.1109/Jestpe.2017.2743527 |
0.316 |
|
2017 |
Khatibi H, Khiyabani S, Afshari E. An Efficient High-Power Fundamental Oscillator Above $f_{\max }/2$ : A Systematic Design Ieee Transactions On Microwave Theory and Techniques. 65: 4176-4189. DOI: 10.1109/Tmtt.2017.2702116 |
0.552 |
|
2017 |
Afshari E, Moradi GR, Rahimi R, Farhangi B, Yang Y, Blaabjerg F, Farhangi S. Control Strategy for Three-Phase Grid-Connected PV Inverters Enabling Current Limitation Under Unbalanced Faults Ieee Transactions On Industrial Electronics. 64: 8908-8918. DOI: 10.1109/Tie.2017.2733481 |
0.394 |
|
2017 |
Pourahmad V, Manipatruni S, Nikonov D, Young I, Afshari E. Nonboolean Pattern Recognition Using Chains of Coupled CMOS Oscillators as Discriminant Circuits Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 3: 1-9. DOI: 10.1109/Jxcdc.2017.2654300 |
0.393 |
|
2017 |
Mostajeran A, Cathelin A, Afshari E. A 170-GHz Fully Integrated Single-Chip FMCW Imaging Radar with 3-D Imaging Capability Ieee Journal of Solid-State Circuits. 52: 2721-2734. DOI: 10.1109/Jssc.2017.2725963 |
0.494 |
|
2017 |
Jiang C, Cathelin A, Afshari E. A High-Speed Efficient 220-GHz Spatial-Orthogonal ASK Transmitter in 130-nm SiGe BiCMOS Ieee Journal of Solid-State Circuits. 52: 2321-2334. DOI: 10.1109/Jssc.2017.2702007 |
0.438 |
|
2017 |
Aghasi H, Cathelin A, Afshari E. A 0.92-THz SiGe Power Radiator Based on a Nonlinear Theory for Harmonic Generation Ieee Journal of Solid-State Circuits. 52: 406-422. DOI: 10.1109/Jssc.2016.2627547 |
0.554 |
|
2016 |
Aghasi H, Iraei RM, Naeemi A, Afshari E. Smart detector cell: A scalable all-spin circuit for low power non-boolean pattern recognition Ieee Transactions On Nanotechnology. 15: 356-366. DOI: 10.1109/Tnano.2016.2530779 |
0.382 |
|
2016 |
Jiang C, Mostajeran A, Han R, Emadi M, Sherry H, Cathelin A, Afshari E. A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS Ieee Journal of Solid-State Circuits. 51: 2596-2609. DOI: 10.1109/Jssc.2016.2599533 |
0.698 |
|
2016 |
Jiang C, Mostajeran A, Han R, Emadi M, Sherry H, Cathelin A, Afshari E. 25.5 A 320GHz subharmonic-mixing coherent imager in 0.13μm SiGe BiCMOS Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 59: 432-434. DOI: 10.1109/ISSCC.2016.7418092 |
0.478 |
|
2016 |
Afshari E, Rahimi R, Farhangi B, Farhangi S. Analysis and modification of the single phase transformerless FB-DCB inverter modulation for injecting reactive power 2015 Ieee Conference On Energy Conversion, Cencon 2015. 413-418. DOI: 10.1109/CENCON.2015.7409580 |
0.382 |
|
2015 |
Adnan M, Afshari E. Efficient Microwave and Millimeter-Wave Frequency Multipliers Using Nonlinear Transmission Lines in CMOS Technology Ieee Transactions On Microwave Theory and Techniques. DOI: 10.1109/Tmtt.2015.2459688 |
0.563 |
|
2015 |
Saadat S, Aghasi H, Afshari E, Mosallaei H. Low-power negative inductance integrated circuits for GHz applications Ieee Microwave and Wireless Components Letters. 25: 118-120. DOI: 10.1109/Lmwc.2014.2382631 |
0.514 |
|
2015 |
Han R, Jiang C, Mostajeran A, Emadi M, Aghasi H, Sherry H, Cathelin A, Afshari E. A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop Ieee Journal of Solid-State Circuits. DOI: 10.1109/Jssc.2015.2471847 |
0.688 |
|
2015 |
Mostajeran A, Bakhtiar MS, Afshari E. A 2.4GHz VCO with FOM of 190dBc/Hz at 10kHz-to-2MHz offset frequencies in 0.13μm CMOS using an ISF manipulation technique Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 58: 452-453. DOI: 10.1109/ISSCC.2015.7063121 |
0.337 |
|
2015 |
Han R, Jiang C, Mostajeran A, Emadi M, Aghasi H, Sherry H, Cathelin A, Afshari E. A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 58: 446-447. DOI: 10.1109/ISSCC.2015.7063118 |
0.399 |
|
2015 |
Han R, Afshari E. Filling the terahertz gap with sand: High-power terahertz radiators in silicon Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 2015: 172-177. DOI: 10.1109/BCTM.2015.7340574 |
0.306 |
|
2014 |
Adnan M, Afshari E. A 105-GHz VCO with 9.5% tuning range and 2.8-mW peak output power in a 65-nm bulk CMOS process Ieee Transactions On Microwave Theory and Techniques. 62: 753-762. DOI: 10.1109/Tmtt.2014.2309940 |
0.604 |
|
2014 |
Tousi Y, Afshari E. A High-Power and Scalable 2-D Phased Array for Terahertz CMOS Integrated Systems Ieee Journal of Solid-State Circuits. DOI: 10.1109/Jssc.2014.2375324 |
0.56 |
|
2014 |
Adnan M, Afshari E. 14.8 A 247-to-263.5GHz VCO with 2.6mW peak output power and 1.14% DC-to-RF efficiency in 65nm bulk CMOS Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 57: 262-263. DOI: 10.1109/ISSCC.2014.6757427 |
0.513 |
|
2014 |
Tousi Y, Afshari E. 14.6 A scalable THz 2D phased array with +17dBm of EIRP at 338GHz in 65nm bulk CMOS Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 57: 258-259. DOI: 10.1109/ISSCC.2014.6757425 |
0.464 |
|
2013 |
Han R, Afshari E. A high-power broadband passive terahertz frequency doubler in CMOS Ieee Transactions On Microwave Theory and Techniques. 61: 1150-1160. DOI: 10.1109/Tmtt.2013.2243465 |
0.753 |
|
2013 |
Saadat S, Adnan M, Mosallaei H, Afshari E. Composite metamaterial and metasurface integrated with non-foster active circuit elements: A bandwidth-enhancement investigation Ieee Transactions On Antennas and Propagation. 61: 1210-1218. DOI: 10.1109/Tap.2012.2227654 |
0.348 |
|
2013 |
Adnan M, Afshari E. A 105GHz VCO with 9.5% tuning range and 2.8mW peak output power using coupled colpitts oscillators in 65nm bulk CMOS Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 239-242. DOI: 10.1109/RFIC.2013.6569571 |
0.533 |
|
2013 |
Han R, Afshari E. A CMOS high-power broadband 260-GHz radiator array for spectroscopy Ieee Journal of Solid-State Circuits. 48: 3090-3104. DOI: 10.1109/Jssc.2013.2272864 |
0.712 |
|
2013 |
Han R, Zhang Y, Kim Y, Kim DY, Shichijo H, Afshari E, O KK. Active terahertz imaging using schottky diodes in CMOS: Array and 860-ghz pixel Ieee Journal of Solid-State Circuits. 48: 2296-2308. DOI: 10.1109/Jssc.2013.2269856 |
0.635 |
|
2013 |
Han R, Afshari E. A 260GHz broadband source with 1.1mW continuous-wave radiated power and EIRP of 15.7dBm in 65nm CMOS Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 56: 138-139. DOI: 10.1109/ISSCC.2013.6487671 |
0.447 |
|
2013 |
Saadat S, Mosallaei H, Afshari E. Radiation-efficient 60 GHz on-chip dipole antenna realised by reactive impedance metasurface Iet Microwaves, Antennas and Propagation. 7: 98-104. DOI: 10.1049/Iet-Map.2011.0622 |
0.352 |
|
2013 |
Afshari E, Han R. Progress towards mW-power generation in CMOS THz signal sources European Microwave Week 2013, Eumw 2013 - Conference Proceedings; Eumic 2013: 8th European Microwave Integrated Circuits Conference. 117-120. |
0.525 |
|
2012 |
Tousi YM, Pourahmad V, Afshari E. Delay coupled oscillators for frequency tuning of solid-state terahertz sources. Physical Review Letters. 108: 234101. PMID 23003959 DOI: 10.1103/Physrevlett.108.234101 |
0.54 |
|
2012 |
Lee W, Afshari E. A CMOS noise-squeezing amplifier Ieee Transactions On Microwave Theory and Techniques. 60: 329-339. DOI: 10.1109/Tmtt.2011.2178318 |
0.412 |
|
2012 |
Lee W, Adnan M, Momeni O, Afshari E. A nonlinear lattice for high-amplitude picosecond pulse generation in CMOS Ieee Transactions On Microwave Theory and Techniques. 60: 370-380. DOI: 10.1109/Tmtt.2011.2178255 |
0.76 |
|
2012 |
Han R, Afshari E. A broadband 480-GHz passive frequency doubler in 65-nm bulk CMOS with 0.23mW output power Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 203-206. DOI: 10.1109/RFIC.2012.6242264 |
0.552 |
|
2012 |
Tousi YM, Momeni O, Afshari E. A novel CMOS high-power terahertz VCO based on coupled oscillators: Theory and implementation Ieee Journal of Solid-State Circuits. 47: 3032-3042. DOI: 10.1109/Jssc.2012.2217853 |
0.832 |
|
2012 |
Li G, Liu L, Tang Y, Afshari E. A low-phase-noise wide-tuning-range oscillator based on resonant mode Switching Ieee Journal of Solid-State Circuits. 47: 1295-1308. DOI: 10.1109/Jssc.2012.2190185 |
0.462 |
|
2012 |
Tousi YM, Momeni O, Afshari E. A 283-to-296GHz VCO with 0.76mW peak output power in 65nm CMOS Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 55: 258-259. DOI: 10.1109/ISSCC.2012.6177000 |
0.487 |
|
2012 |
Han R, Zhang Y, Kim Y, Kim DY, Shichijo H, Afshari E, Kenneth O. 280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 55: 254-255. DOI: 10.1109/ISSCC.2012.6176998 |
0.359 |
|
2012 |
Li G, Afshari E. A low-phase-noise wide-tuning-range quadrature oscillator in 65nm CMOS Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330682 |
0.368 |
|
2011 |
Li G, Afshari E. A distributed dual-band LC oscillator based on mode switching Ieee Transactions On Microwave Theory and Techniques. 59: 99-107. DOI: 10.1109/Tmtt.2010.2091203 |
0.448 |
|
2011 |
Lee W, Afshari E. Low-noise parametric resonant amplifier Ieee Transactions On Circuits and Systems I: Regular Papers. 58: 479-492. DOI: 10.1109/Tcsi.2010.2072370 |
0.35 |
|
2011 |
Momeni O, Afshari E. A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS Ieee Journal of Solid-State Circuits. 46: 2966-2976. DOI: 10.1109/Jssc.2011.2162469 |
0.801 |
|
2011 |
Tousi YM, Afshari E. A miniature 2 mW 4 bit 1.2 GS/s delay-line-based ADC in 65 nm CMOS Ieee Journal of Solid-State Circuits. 46: 2312-2325. DOI: 10.1109/Jssc.2011.2162186 |
0.472 |
|
2011 |
Momeni O, Afshari E. High power terahertz and millimeter-wave oscillator design: A systematic approach Ieee Journal of Solid-State Circuits. 46: 583-597. DOI: 10.1109/Jssc.2011.2104553 |
0.825 |
|
2011 |
Momeni O, Afshari E. A 220-to-275GHz traveling-wave frequency doubler with -6.6dBm power at 244GHz in 65nm CMOS Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 286-287. DOI: 10.1109/ISSCC.2011.5746321 |
0.468 |
|
2011 |
Momeni O, Afshari E. A high gain 107 GHz amplifier in 130 nm CMOS Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2011.6055322 |
0.45 |
|
2011 |
Adnan M, Afshari E. A low conversion loss passive frequency doubler Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2011.6055285 |
0.492 |
|
2011 |
Adnan M, Han R, Afshari E. Phase matching using bandgap structures for efficient parametric frequency conversion European Microwave Week 2011: "Wave to the Future", Eumw 2011, Conference Proceedings - 41st European Microwave Conference, Eumc 2011. 639-642. |
0.365 |
|
2010 |
Tousi YM, Afshari E. 2-D electrical interferometer: A novel high-speed quantizer Ieee Transactions On Microwave Theory and Techniques. 58: 2549-2561. DOI: 10.1109/Tmtt.2010.2063830 |
0.396 |
|
2010 |
Lilis GN, Park J, Lee W, Li G, Bhat HS, Afshari E. Harmonic generation using nonlinear LC lattices Ieee Transactions On Microwave Theory and Techniques. 58: 1713-1723. DOI: 10.1109/Tmtt.2010.2049678 |
0.461 |
|
2010 |
Momeni O, Hashemi H, Afshari E. A 10-Gb/s inductorless transimpedance amplifier Ieee Transactions On Circuits and Systems Ii: Express Briefs. 57: 926-930. DOI: 10.1109/Tcsii.2010.2087971 |
0.763 |
|
2010 |
Lee W, Afshari E. Correction to “Distributed Parametric Resonator: A Passive CMOS Frequency Divider” [Sep 10 1834-1844] Ieee Journal of Solid-State Circuits. 45: 2210-2210. DOI: 10.1109/Jssc.2010.2074670 |
0.356 |
|
2010 |
Lee W, Afshari E. Distributed parametric resonator: A passive CMOS frequency divider Ieee Journal of Solid-State Circuits. 45: 1834-1844. DOI: 10.1109/Jssc.2010.2056833 |
0.541 |
|
2010 |
Li G, Afshari E. A low-phase-noise multi-phase oscillator based on left-handed LC-ring Ieee Journal of Solid-State Circuits. 45: 1822-1833. DOI: 10.1109/Jssc.2010.2054591 |
0.393 |
|
2010 |
Adnan M, Afshari E. Bandwidth enhancement of passive filters at mm-wave frequencies using effective Negative Group Index (NGI) structures Iscas 2010 - 2010 Ieee International Symposium On Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 749-752. DOI: 10.1109/ISCAS.2010.5537468 |
0.317 |
|
2010 |
Bhat HS, Lee W, Lilis GN, Afshari E. Steady-state perturbative theory for nonlinear circuits Journal of Physics a: Mathematical and Theoretical. 43. DOI: 10.1088/1751-8113/43/20/205101 |
0.396 |
|
2009 |
Momeni O, Afshari E. Electrical prism: A high quality factor filter for millimeter-Wave and terahertz frequencies Ieee Transactions On Microwave Theory and Techniques. 57: 2790-2799. DOI: 10.1109/Tmtt.2009.2032343 |
0.733 |
|
2009 |
Li G, Tousi YM, Hassibi A, Afshari E. Delay-line-based analog-to-digital converters Ieee Transactions On Circuits and Systems Ii: Express Briefs. 56: 464-468. DOI: 10.1109/Tcsii.2009.2020947 |
0.418 |
|
2009 |
Lee W, Amoozegar F, Afshari E. Picosecond pulse generation on CMOS: Design beyond transistor limits Ieee National Radar Conference - Proceedings. DOI: 10.1109/RADAR.2009.4977090 |
0.302 |
|
2009 |
Tousi YM, Li G, Hassibi A, Afshari E. A 1mW 4b 1GS/s delay-line based analog-to-digital converter Proceedings - Ieee International Symposium On Circuits and Systems. 1121-1124. DOI: 10.1109/ISCAS.2009.5117957 |
0.314 |
|
2008 |
Bhat HS, Afshari E. Nonlinear constructive interference in electrical lattices. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 77: 066602. PMID 18643385 DOI: 10.1103/Physreve.77.066602 |
0.401 |
|
2008 |
Afshari E, Bhat HS, Hajimiri A. Ultrafast analog Fourier transform using 2-D LC lattice Ieee Transactions On Circuits and Systems I: Regular Papers. 55: 2332-2343. DOI: 10.1109/Tcsi.2008.918151 |
0.556 |
|
2006 |
Afshari E, Bhat HS, Hajimiri A, Marsden JE. Extremely wideband signal shaping using one- And two-dimensional nonuniform nonlinear transmission lines Journal of Applied Physics. 99. DOI: 10.1063/1.2174126 |
0.575 |
|
2006 |
Afshari E, Bhat H, Li X, Hajimiri A. Electrical funnel: A broadband signal combining method Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 206+191. |
0.661 |
|
2005 |
Afshari E, Hajimiri A. Nonlinear transmission lines for pulse shaping in silicon Ieee Journal of Solid-State Circuits. 40: 744-752. DOI: 10.1109/JSSC.2005.843639 |
0.499 |
|
2003 |
Afshari E, Hajimiri A. Non-linear transmission lines for pulse shaping in silicon Proceedings of the Custom Integrated Circuits Conference. 91-94. DOI: 10.1109/Jssc.2005.843639 |
0.541 |
|
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