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Joerg Appenzeller - Publications

Affiliations: 
Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanotechnology
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155 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Cai J, Sun Z, Wu P, Tripathi R, Lan HY, Kong J, Chen Z, Appenzeller J. High-Performance Complementary Circuits from Two-Dimensional MoTe. Nano Letters. PMID 37976291 DOI: 10.1021/acs.nanolett.3c03184  0.304
2022 Sun Z, Pang CS, Wu P, Hung TYT, Li MY, Liew SL, Cheng CC, Wang H, Wong HP, Li LJ, Radu I, Chen Z, Appenzeller J. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS. Acs Nano. PMID 36094410 DOI: 10.1021/acsnano.2c05902  0.381
2021 Pang CS, Zhou R, Liu X, Wu P, Hung TYT, Guo S, Zaghloul ME, Krylyuk S, Davydov AV, Appenzeller J, Chen Z. Mobility Extraction in 2D Transition Metal Dichalcogenide Devices-Avoiding Contact Resistance Implicated Overestimation. Small (Weinheim An Der Bergstrasse, Germany). e2100940. PMID 34110675 DOI: 10.1002/smll.202100940  0.395
2021 Wu P, Appenzeller J. Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor without a Ferroelectric Component. Acs Nano. PMID 33705109 DOI: 10.1021/acsnano.0c10344  0.339
2020 Shen T, Ostwal V, Camsari KY, Appenzeller J. Demonstration of a pseudo-magnetization based simultaneous write and read operation in a CoFeB/Pb(MgNb)TiO heterostructure. Scientific Reports. 10: 10791. PMID 32612280 DOI: 10.1038/S41598-020-67776-Y  0.31
2020 Ostwal V, Shen T, Appenzeller J. Efficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr Ge Te. Advanced Materials (Deerfield Beach, Fla.). e1906021. PMID 31930776 DOI: 10.1002/Adma.201906021  0.325
2019 Zhang F, Zhang H, Krylyuk S, Milligan CA, Zhu Y, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J. Electric-field induced structural transition in vertical MoTe- and MoWTe-based resistive memories. Nature Materials. 18: 55-61. PMID 30542093 DOI: 10.1038/S41563-018-0234-Y  0.372
2019 Wu P, Appenzeller J. Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents Ieee Electron Device Letters. 40: 981-984. DOI: 10.1109/Led.2019.2909176  0.452
2019 Wu P, Appenzeller J. Toward CMOS like devices from two-dimensional channel materials Apl Materials. 7: 100701. DOI: 10.1063/1.5115147  0.464
2018 Wu P, Ameen T, Zhang H, Bendersky LA, Ilatikhameneh H, Klimeck G, Rahman R, Davydov AV, Appenzeller J. Complementary Black Phosphorus Tunneling Field-Effect Transistors. Acs Nano. PMID 30563322 DOI: 10.1021/Acsnano.8B06441  0.513
2018 Ostwal V, Debashis P, Faria R, Chen Z, Appenzeller J. Spin-torque devices with hard axis initialization as Stochastic Binary Neurons. Scientific Reports. 8: 16689. PMID 30420701 DOI: 10.1038/S41598-018-34996-2  0.328
2018 Stampfer B, Zhang F, Illarionov YY, Knobloch T, Wu P, Waltl M, Grill A, Appenzeller J, Grasser T. Characterization of Single Defects in Ultra-Scaled MoS Field-Effect Transistors. Acs Nano. PMID 29878746 DOI: 10.1021/Acsnano.8B00268  0.44
2018 Chen C, Ameen TA, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs Ieee Transactions On Electron Devices. 65: 4614-4621. DOI: 10.1109/Ted.2018.2862408  0.394
2018 Zhang F, Lee C, Robinson JA, Appenzeller J. Exploration of channel width scaling and edge states in transition metal dichalcogenides Nano Research. 11: 1768-1774. DOI: 10.1007/S12274-017-1794-X  0.463
2017 Zhu Y, Zhou R, Zhang F, Appenzeller J. Vertical charge transport through transition metal dichalcogenides - a quantitative analysis. Nanoscale. PMID 29168520 DOI: 10.1039/C7Nr05069K  0.408
2017 Prakash A, Ilatikhameneh H, Wu P, Appenzeller J. Understanding contact gating in Schottky barrier transistors from 2D channels. Scientific Reports. 7: 12596. PMID 28974712 DOI: 10.1038/S41598-017-12816-3  0.449
2017 Zhou R, Ostwal V, Appenzeller J. Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions. Nano Letters. PMID 28718653 DOI: 10.1021/Acs.Nanolett.7B01547  0.391
2017 Prakash A, Appenzeller J. Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors. Acs Nano. PMID 28191930 DOI: 10.1021/Acsnano.6B07360  0.446
2017 Zhu Y, Zhou R, Wang L, Wong SS, Appenzeller J. Utilizing Electrical Characteristics of Individual Nanotube Devices to Study the Charge Transfer between CdSe Quantum Dots and Double-Walled Nanotubes Acs Energy Letters. 2: 717-725. DOI: 10.1021/Acsenergylett.7B00023  0.375
2016 Müller MR, Salazar R, Fathipour S, Xu H, Kallis K, Künzelmann U, Seabaugh A, Appenzeller J, Knoch J. Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure. Nanoscale Research Letters. 11: 512. PMID 27878575 DOI: 10.1186/S11671-016-1728-7  0.463
2016 Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure. Nano Letters. PMID 27494551 DOI: 10.1021/Acs.Nanolett.6B01853  0.331
2016 Wang L, Han J, Sundahl B, Thornton S, Zhu Y, Zhou R, Jaye C, Liu H, Li ZQ, Taylor GT, Fischer DA, Appenzeller J, Harrison RJ, Wong SS. Ligand-induced dependence of charge transfer in nanotube-quantum dot heterostructures. Nanoscale. PMID 27368081 DOI: 10.1039/C6Nr03091B  0.32
2016 Shen T, Penumatcha AV, Appenzeller J. Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors. Acs Nano. PMID 27043387 DOI: 10.1021/Acsnano.6B01149  0.391
2016 Ilatikhameneh H, Salazar RB, Klimeck G, Rahman R, Appenzeller J. From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling Ieee Transactions On Electron Devices. 63: 2871-2878. DOI: 10.1109/Ted.2016.2565582  0.375
2016 Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Design rules for high performance tunnel transistors from 2-D materials Ieee Journal of the Electron Devices Society. 4: 260-265. DOI: 10.1109/Jeds.2016.2568219  0.43
2015 Penumatcha AV, Salazar RB, Appenzeller J. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model. Nature Communications. 6: 8948. PMID 26563458 DOI: 10.1038/Ncomms9948  0.504
2015 Zhu Y, Appenzeller J. On the Current Drive Capability of Low Dimensional Semiconductors: 1D versus 2D. Nanoscale Research Letters. 10: 425. PMID 26515073 DOI: 10.1186/S11671-015-1134-6  0.356
2015 Zhang F, Appenzeller J. Tunability of short-channel effects in MoS2 field-effect devices. Nano Letters. 15: 301-6. PMID 25545046 DOI: 10.1021/Nl503586V  0.458
2015 Ilatikhameneh H, Rahman R, Appenzeller J, Klimeck G. Electrically doped WTe2 tunnel transistors International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 270-272. DOI: 10.1109/SISPAD.2015.7292311  0.325
2015 Ilatikhameneh H, Ameen TA, Klimeck G, Appenzeller J, Rahman R. Dielectric Engineered Tunnel Field-Effect Transistor Ieee Electron Device Letters. 36: 1097-1100. DOI: 10.1109/Led.2015.2474147  0.424
2015 Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Scaling Theory of Electrically Doped 2D Transistors Ieee Electron Device Letters. 36: 726-728. DOI: 10.1109/Led.2015.2436356  0.394
2015 Ilatikhameneh H, Tan Y, Novakovic B, Klimeck G, Rahman R, Appenzeller J. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 12-18. DOI: 10.1109/Jxcdc.2015.2423096  0.475
2015 Salazar RB, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations Journal of Applied Physics. 118. DOI: 10.1063/1.4934682  0.441
2015 Wang L, Han J, Zhu Y, Zhou R, Jaye C, Liu H, Li ZQ, Taylor GT, Fischer DA, Appenzeller J, Wong SS. Probing the Dependence of Electron Transfer on Size and Coverage in Carbon Nanotube-Quantum Dot Heterostructures Journal of Physical Chemistry C. 119: 26327-26338. DOI: 10.1021/Acs.Jpcc.5B08681  0.339
2014 Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567  0.605
2014 Lin CC, Gao Y, Penumatcha AV, Diep VQ, Appenzeller J, Chen Z. Improvement of spin transfer torque in asymmetric graphene devices. Acs Nano. 8: 3807-12. PMID 24635654 DOI: 10.1021/Nn500533B  0.37
2014 Das S, Prakash A, Salazar R, Appenzeller J. Toward low-power electronics: tunneling phenomena in transition metal dichalcogenides. Acs Nano. 8: 1681-9. PMID 24392853 DOI: 10.1021/Nn406603H  0.583
2014 Prakash A, Das S, Mehta R, Chen Z, Appenzeller J. Ionic gated WSe2 FETs: Towards transparent Schottky barriers Device Research Conference - Conference Digest, Drc. 129-130. DOI: 10.1109/DRC.2014.6872331  0.572
2014 Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527  0.446
2013 Lin CC, Penumatcha AV, Gao Y, Diep VQ, Appenzeller J, Chen Z. Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field. Nano Letters. 13: 5177-81. PMID 24127734 DOI: 10.1021/Nl402547M  0.33
2013 Das S, Appenzeller J. Where does the current flow in two-dimensional layered systems? Nano Letters. 13: 3396-402. PMID 23802773 DOI: 10.1021/Nl401831U  0.566
2013 Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54. PMID 23464859 DOI: 10.1021/Nl3047078  0.441
2013 Das S, Chen HY, Penumatcha AV, Appenzeller J. High performance multilayer MoS2 transistors with scandium contacts. Nano Letters. 13: 100-5. PMID 23240655 DOI: 10.1021/Nl303583V  0.677
2013 Razavieh A, Janes DB, Appenzeller J. Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit Ieee Transactions On Electron Devices. 60: 2071-2076. DOI: 10.1109/Ted.2013.2259238  0.375
2013 Das S, Appenzeller J. Evaluating the scalability of multilayer MoS2 transistors Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2013.6633839  0.448
2013 Das S, Appenzeller J. WSe2 field effect transistors with enhanced ambipolar characteristics Applied Physics Letters. 103. DOI: 10.1063/1.4820408  0.616
2013 Chen H, Appenzeller J. Coulomb drag between in-plane graphene double ribbons and the impact of the dielectric constant Nano Research. 6: 897-905. DOI: 10.1007/S12274-013-0366-Y  0.58
2013 Das S, Appenzeller J. Cover Picture: Screening and interlayer coupling in multilayer MoS2(Phys. Status Solidi RRL 4/2013) Physica Status Solidi (Rrl) - Rapid Research Letters. 7: n/a-n/a. DOI: 10.1002/Pssr.201390010  0.44
2013 Das S, Appenzeller J. Screening and interlayer coupling in multilayer MoS2 Physica Status Solidi - Rapid Research Letters. 7: 268-273. DOI: 10.1002/Pssr.201307015  0.575
2012 Salazar RB, Mehrotra SR, Klimeck G, Singh N, Appenzeller J. Observation of 1D behavior in Si nanowires: toward high-performance TFETs. Nano Letters. 12: 5571-5. PMID 23030672 DOI: 10.1021/Nl3025664  0.379
2012 Zhao Y, Candebat D, Delker C, Zi Y, Janes D, Appenzeller J, Yang C. Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors. Nano Letters. 12: 5331-6. PMID 22950905 DOI: 10.1021/Nl302684S  0.488
2012 Chen HY, Appenzeller J. Graphene-based frequency tripler. Nano Letters. 12: 2067-70. PMID 22452648 DOI: 10.1021/nl300230k  0.534
2012 Zi Y, Zhao Y, Candebat D, Appenzeller J, Yang C. Synthesis of antimony-based nanowires using the simple vapor deposition method. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 13: 2585-8. PMID 22438329 DOI: 10.1002/Cphc.201101042  0.343
2012 Knoch J, Chen Z, Appenzeller J. Properties of metal-graphene contacts Ieee Transactions On Nanotechnology. 11: 513-519. DOI: 10.1109/Tnano.2011.2178611  0.456
2012 Chen HY, Appenzeller J. On the voltage gain of complementary graphene voltage amplifiers with optimized doping Ieee Electron Device Letters. 33: 1462-1464. DOI: 10.1109/Led.2012.2207084  0.584
2012 Das S, Appenzeller J. On the scaling behavior of organic ferroelectric copolymer PVDF-TrFE for memory application Organic Electronics: Physics, Materials, Applications. 13: 3326-3332. DOI: 10.1016/J.Orgel.2012.09.036  0.554
2011 Das S, Appenzeller J. FeTRAM. An organic ferroelectric material based novel random access memory cell. Nano Letters. 11: 4003-7. PMID 21859101 DOI: 10.1021/Nl2023993  0.519
2011 Zhao Y, Smith JT, Appenzeller J, Yang C. Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells. Nano Letters. 11: 1406-11. PMID 21417251 DOI: 10.1021/Nl1031138  0.311
2011 Sui Y, Low T, Lundstrom M, Appenzeller J. Signatures of disorder in the minimum conductivity of graphene. Nano Letters. 11: 1319-22. PMID 21329334 DOI: 10.1021/Nl104399Z  0.389
2011 Das S, Appenzeller J. On the importance of bandgap formation in graphene for analog device applications Ieee Transactions On Nanotechnology. 10: 1093-1098. DOI: 10.1109/Tnano.2011.2109007  0.562
2011 Berdebes D, Low T, Sui Y, Appenzeller J, Lundstrom MS. Substrate gating of contact resistance in graphene transistors Ieee Transactions On Electron Devices. 58: 3925-3932. DOI: 10.1109/Ted.2011.2163800  0.426
2011 Smith JT, Sandow C, Das S, Minamisawa RA, Mantl S, Appenzeller J. Silicon nanowire tunneling field-effect transistor arrays: Improving subthreshold performance using excimer laser annealing Ieee Transactions On Electron Devices. 58: 1822-1829. DOI: 10.1109/Ted.2011.2135355  0.581
2011 Das S, Appenzeller J. An all-graphene radio frequency low noise amplifier Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940628  0.413
2011 Smith JT, Das S, Appenzeller J. Broken-gap tunnel MOSFET: A constant-slope Sub-60-mV/decade transistor Ieee Electron Device Letters. 32: 1367-1369. DOI: 10.1109/Led.2011.2162220  0.613
2011 Chen HY, Appenzeller J. Complementary-type graphene inverters operating at room-temperature Device Research Conference - Conference Digest, Drc. 33-34. DOI: 10.1109/DRC.2011.5994408  0.518
2010 Knoch J, Appenzeller J. Modeling of high-performance p-type IIIV heterojunction tunnel FETs Ieee Electron Device Letters. 31: 305-307. DOI: 10.1109/Led.2010.2041180  0.321
2009 Sui Y, Appenzeller J. Screening and interlayer coupling in multilayer graphene field-effect transistors. Nano Letters. 9: 2973-7. PMID 19639984 DOI: 10.1021/Nl901396G  0.391
2009 Low T, Hong S, Appenzeller J, Datta S, Lundstrom MS. Conductance asymmetry of graphene p-n junction Ieee Transactions On Electron Devices. 56: 1292-1299. DOI: 10.1109/Ted.2009.2017646  0.38
2009 Appenzeller J. Nanowire electronics Esscirc 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 73-75. DOI: 10.1109/ESSCIRC.2009.5325929  0.326
2009 Candebat D, Zhao Y, Sandow C, Koshel B, Yang C, Appenzeller J. InSb nanowire field-effect transistors- Electrical characterization and material analysis Device Research Conference - Conference Digest, Drc. 13-14. DOI: 10.1109/DRC.2009.5354959  0.373
2009 Sui Y, Appenzeller J. Multi-layer graphene field-effect transistors for improved device performance Device Research Conference - Conference Digest, Drc. 199-200. DOI: 10.1109/DRC.2009.5354950  0.321
2009 Low T, Appenzeller J. Electronic transport properties of a tilted graphene p-n junction Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.155406  0.398
2008 Gunawan O, Sekaric L, Majumdar A, Rooks M, Appenzeller J, Sleight JW, Guha S, Haensch W. Measurement of carrier mobility in silicon nanowires. Nano Letters. 8: 1566-71. PMID 18444687 DOI: 10.1021/Nl072646W  0.454
2008 Appenzeller J, Knoch J, Björk MT, Riel H, Schmid H, Riess W. Toward nanowire electronics Ieee Transactions On Electron Devices. 55: 2827-2845. DOI: 10.1109/Ted.2008.2008011  0.461
2008 Knoch J, Riess W, Appenzeller J. Outperforming the conventional scaling rules in the quantum-capacitance limit Ieee Electron Device Letters. 29: 372-374. DOI: 10.1109/Led.2008.917816  0.435
2008 Chen Z, Farmer D, Xu S, Gordon R, Avouris P, Appenzeller J. Externally assembled gate-all-around carbon nanotube field-effect transistor Ieee Electron Device Letters. 29: 183-185. DOI: 10.1109/Led.2007.914069  0.481
2008 Appenzeller J. Carbon nanotubes for high-performance electronics - Progress and prospect Proceedings of the Ieee. 96: 201-211. DOI: 10.1109/JPROC.2007.911051  0.324
2008 Chen Z, Appenzeller J. Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796737  0.348
2008 Knoch J, Appenzeller J. Tunneling phenomena in carbon nanotube field-effect transistors Physica Status Solidi (a) Applications and Materials Science. 205: 679-694. DOI: 10.1002/Pssa.200723528  0.478
2007 Lin Y, Chen Z, Appenzeller J, Solomon PM, Avouris P. Advances in Carbon Nanotube Devices and Circuits The Japan Society of Applied Physics. 2007: 1164-1165. DOI: 10.7567/Ssdm.2007.J-9-2  0.381
2007 Appenzeller J, Lin YM, Knoch J, Chen Z, Avouris P. 1/f noise in carbon nanotube Devices - On the impact of contacts and device geometry Ieee Transactions On Nanotechnology. 6: 368-373. DOI: 10.1109/Tnano.2007.892052  0.385
2007 Indlekofer KM, Knoch J, Appenzeller J. Understanding Coulomb effects in nanoscale Schottky-barrier-FETs Ieee Transactions On Electron Devices. 54: 1502-1509. DOI: 10.1109/Ted.2007.895235  0.391
2007 Zhang M, Knoch J, Appenzeller J, Mantl S. Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs Ieee Electron Device Letters. 28: 223-225. DOI: 10.1109/Led.2007.891258  0.386
2007 Chen Z, Appenzeller J, Solomon PM, Lin YM, Avouris P. Gate work function engineering for nanotube-based circuits Digest of Technical Papers - Ieee International Solid-State Circuits Conference. DOI: 10.1109/ISSCC.2007.373591  0.302
2007 Knoch J, Mantl S, Appenzeller J. Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices Solid-State Electronics. 51: 572-578. DOI: 10.1016/J.Sse.2007.02.001  0.428
2007 Lin YM, Appenzeller J, Chen Z, Avouris P. Electrical transport and 1 / f noise in semiconducting carbon nanotubes Physica E: Low-Dimensional Systems and Nanostructures. 37: 72-77. DOI: 10.1016/J.Physe.2006.07.008  0.393
2007 Knoch J, Zhang M, Appenzeller J, Mantl S. Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors Applied Physics a: Materials Science and Processing. 87: 351-357. DOI: 10.1007/S00339-007-3868-1  0.447
2006 Tutuc E, Appenzeller J, Reuter MC, Guha S. Realization of a linear germanium nanowire p-n junction. Nano Letters. 6: 2070-4. PMID 16968027 DOI: 10.1021/Nl061338F  0.369
2006 Lin YM, Appenzeller J, Knoch J, Chen Z, Avouris P. Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes. Nano Letters. 6: 930-6. PMID 16683828 DOI: 10.1021/Nl052528D  0.387
2006 Chen Z, Appenzeller J, Lin YM, Sippel-Oakley J, Rinzler AG, Tang J, Wind SJ, Solomon PM, Avouris P. An integrated logic circuit assembled on a single carbon nanotube. Science (New York, N.Y.). 311: 1735. PMID 16556834 DOI: 10.1126/Science.1122797  0.431
2006 Knoch J, Zhang M, Mantl S, Appenzeller J. On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs Ieee Transactions On Electron Devices. 53: 1669-1674. DOI: 10.1109/Ted.2006.877262  0.425
2006 Appenzeller J, Knoch J, Tutuc E, Reuter M, Guha S. Dual-gate silicon nanowire transistors with nickel silicide contacts Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346842  0.363
2006 Indlekofer KM, Knoch J, Appenzeller J. Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.113310  0.377
2006 Rodriguez-Morales F, Zannoni R, Nicholson J, Fischetti M, Yngvesson KS, Appenzeller J. Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube Applied Physics Letters. 89. DOI: 10.1063/1.2337863  0.325
2005 Chen Z, Appenzeller J, Knoch J, Lin YM, Avouris P. The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors. Nano Letters. 5: 1497-502. PMID 16178264 DOI: 10.1021/Nl0508624  0.442
2005 Lin YM, Appenzeller J, Knoch J, Avouris P. High-performance carbon nanotube field-effect transistor with tunable polarities Ieee Transactions On Nanotechnology. 4: 481-489. DOI: 10.1109/Tnano.2005.851427  0.488
2005 Appenzeller J, Lin YM, Knoch J, Chen Z, Avouris P. Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design Ieee Transactions On Electron Devices. 52: 2568-2576. DOI: 10.1109/Ted.2005.859654  0.454
2005 Lin YM, Appenzeller J, Chen Z, Chen ZG, Cheng HM, Avouris P. High-performance dual-gate carbon nanotube FETs with 40-nm gate length Ieee Electron Device Letters. 26: 823-825. DOI: 10.1109/Led.2005.857704  0.42
2005 Knoch J, Appenzeller J. A novel concept for field-effect transistors - The tunneling carbon nanotube FET Device Research Conference - Conference Digest, Drc. 2005: 153-156. DOI: 10.1109/DRC.2005.1553099  0.313
2005 Lin YM, Appenzeller J, Chen Z, Chen ZG, Cheng HM, Avouris P. Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor Device Research Conference - Conference Digest, Drc. 2005: 113-114. DOI: 10.1109/DRC.2005.1553081  0.368
2005 Indlekofer KM, Knoch J, Appenzeller J. Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.125308  0.423
2005 Knoch J, Zhang M, Zhao QT, Lenk S, Mantl S, Appenzeller J. Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2150581  0.478
2005 Singh DV, Jenkins KA, Appenzeller J. Direct measurements of frequency response of carbon nanotube field effect transistors Electronics Letters. 41: 280-282. DOI: 10.1049/El:20057528  0.347
2005 Knoch J, Mantl S, Appenzeller J. Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts Solid-State Electronics. 49: 73-76. DOI: 10.1016/J.Sse.2004.07.002  0.478
2004 Singh DV, Jenkins KA, Appenzeller J, Neumayer D, Grill A, Wong HSP. Frequency response of top-gated carbon nanotube field-effect transistors Ieee Transactions On Nanotechnology. 3: 383-387. DOI: 10.1109/Tnano.2004.828577  0.337
2004 Frank DJ, Appenzeller J. High-Frequency Response in Carbon Nanotube Field-Effect Transistors Ieee Electron Device Letters. 25: 34-36. DOI: 10.1109/Led.2003.821589  0.328
2004 Lin YM, Appenzeller J, Avouris P. Novel structures enabling bulk switching in carbon nanotube FETs Device Research Conference - Conference Digest, Drc. 133-134. DOI: 10.1109/DRC.2004.1367820  0.341
2004 Appenzeller J, Lin YM, Knoch J, Avouris P. Band-to-band tunneling in carbon nanotube field-effect transistors Physical Review Letters. 93. DOI: 10.1103/Physrevlett.93.196805  0.431
2004 Appenzeller J, Knoch J, Radosavljević M, Avouris P. Multimode transport in schottky-barrier carbon-nanotube field-effect transistors Physical Review Letters. 92: 226802-1. DOI: 10.1103/Physrevlett.92.226802  0.453
2004 Appenzeller J, Radosavljević M, Knoch J, Avouris P. Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors Physical Review Letters. 92: 483011-483014. DOI: 10.1103/Physrevlett.92.048301  0.384
2004 Hunger T, Lengeler B, Appenzeller J. Transport in ropes of carbon nanotubes: Contact barriers and Luttinger liquid theory Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.195406  0.382
2004 Radosavljević M, Appenzeller J, Avouris P, Knoch J. High performance of potassium n-doped carbon nanotube field-effect transistors Applied Physics Letters. 84: 3693-3695. DOI: 10.1063/1.1737062  0.501
2004 Lin YM, Appenzeller J, Avouris P. Ambipolar-to-unipolar conversion of carbon nanotube transistors by gate structure engineering Nano Letters. 4: 947-950. DOI: 10.1021/Nl049745J  0.459
2004 Lin YM, Appenzeller J, Avouris P. Novel carbon nanotube FET design with tunable polarity Technical Digest - International Electron Devices Meeting, Iedm. 687-690.  0.36
2003 Wind SJ, Appenzeller J, Avouris P. Lateral scaling in carbon-nanotube field-effect transistors. Physical Review Letters. 91: 058301. PMID 12906636 DOI: 10.1103/Physrevlett.91.058301  0.479
2003 Wind SJ, Radosavljević M, Appenzeller J, Avouris P. Transistor structures for the study of scaling in carbon nanotubes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2856-2859. DOI: 10.1116/1.1624260  0.465
2003 Avouris P, Appenzeller J, Martel R, Wind SJ. Carbon nanotube electronics Proceedings of the Ieee. 91: 1772-1783. DOI: 10.1109/JPROC.2003.818338  0.344
2003 Appenzeller J, Knoch J, Avouris P. Carbon nanotube field-effect transistors - An example of an ultra-thin body Schottky barrier device Device Research Conference - Conference Digest, Drc. 2003: 167-170. DOI: 10.1109/DRC.2003.1226919  0.321
2003 Radosavljević M, Appenzeller J, Derycke V, Martel R, Avouris P, Loiseau A, Cochon JL, Pigache D. Electrical properties and transport in boron nitride nanotubes Applied Physics Letters. 82: 4131-4133. DOI: 10.1063/1.1581370  0.502
2003 Wong HSP, Appenzeller J, Derycke V, Martel R, Wind S, Avouris P. Carbon nanotube field effect transistors - Fabrication, device physics, and circuit implications Digest of Technical Papers - Ieee International Solid-State Circuits Conference.  0.323
2002 Appenzeller J, Knoch J, Derycke V, Martel R, Wind S, Avouris P. Field-modulated carrier transport in carbon nanotube transistors. Physical Review Letters. 89: 126801. PMID 12225112 DOI: 10.1103/Physrevlett.89.126801  0.455
2002 Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2798-2801. DOI: 10.1116/1.1521731  0.481
2002 Knoch J, Lengeler B, Appenzeller J. Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI Ieee Transactions On Electron Devices. 49: 1212-1218. DOI: 10.1109/Ted.2002.1013278  0.475
2002 Appenzeller J, Martel R, Avouris P, Knoch J, Scholvin J, Del Alamo JA, Rice P, Solomon P. Sub-40 nm SOI V-groove n-MOSFETs Ieee Electron Device Letters. 23: 100-102. DOI: 10.1109/55.981319  0.398
2002 Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller J, Avouris P. Carbon nanotubes as Schottky barrier transistors Physical Review Letters. 89: 1068011-1068014. DOI: 10.1103/Physrevlett.89.106801  0.451
2002 Avouris P, Martel R, Heinze S, Radosavljevic M, Wind S, Derycke V, Appenzeller J, Terso J. The role of Schottky barriers on the behavior of carbon nanotube field‐effect transistors Structural and Electronic Properties of Molecular Nanostructures. Xvi International Winterschool On Electronic Properties of Novel Materials. 633: 508-512. DOI: 10.1063/1.1514172  0.429
2002 Knoch J, Appenzeller J. Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 81: 3082-3084. DOI: 10.1063/1.1513657  0.464
2002 Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Erratum: “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes” [Appl. Phys. Lett. 80, 3817 (2002)] Applied Physics Letters. 81: 1359-1359. DOI: 10.1063/1.1502905  0.445
2002 Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes Applied Physics Letters. 80: 3817-3819. DOI: 10.1063/1.1480877  0.517
2002 Derycke V, Martel R, Appenzeller J, Avouris P. Controlling doping and carrier injection in carbon nanotube transistors Applied Physics Letters. 80: 2773-2775. DOI: 10.1063/1.1467702  0.435
2002 Avouris P, Martel R, Derycke V, Appenzeller J. Carbon nanotube transistors and logic circuits Physica B: Condensed Matter. 323: 6-14. DOI: 10.1016/S0921-4526(02)00870-0  0.387
2002 Appenzeller J, Martel R, Derycke V, Radosavljeví M, Wind S, Neumayer D, Avouris P. Carbon nanotubes as potential building blocks for future nanoelectronics Microelectronic Engineering. 64: 391-397. DOI: 10.1016/S0167-9317(02)00813-4  0.45
2002 Martel R, Derycke V, Appenzeller J, Wind S, Avouris P. Carbon nanotube field-effect transistors and logic circuits Proceedings - Design Automation Conference. 94-98.  0.352
2002 Appenzeller J, Knoch J, Martel R, Derycke V, Wind S, Avouris P. Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors Technical Digest - International Electron Devices Meeting. 285-288.  0.319
2002 Appenzeller J, Knoch J, Derycke V, Martel R, Wind S, Avouris P. Field-modulated carrier transport in carbon nanotube transistors Physical Review Letters. 89: 1268011-1268014.  0.355
2001 Knoch J, Appenzeller J, Lengeler B, Martel R, Solomon P, Avouris P, Dieker C, Lu Y, Wang KL, Scholvin J, del Alamo JA. Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 1737-1741. DOI: 10.1116/1.1351803  0.412
2001 Martel R, Derycke V, Lavoie C, Appenzeller J, Chan KK, Tersoff J, Avouris P. Ambipolar electrical transport in semiconducting single-wall carbon nanotubes Physical Review Letters. 87. DOI: 10.1103/Physrevlett.87.256805  0.397
2001 Appenzeller J, Martel R, Avouris P, Stahl H, Lengeler B. Optimized contact configuration for the study of transport phenomena in ropes of single-wall carbon nanotubes Applied Physics Letters. 78: 3313-3315. DOI: 10.1063/1.1373413  0.36
2001 Derycke V, Martel R, Appenzeller J, Avouris P. Carbon Nanotube Inter- and Intramolecular Logic Gates Nano Letters. 1: 453-456. DOI: 10.1021/Nl015606F  0.425
2001 Jakob M, Appenzeller J, Knoch J, Stahl H, Lengeler B. Experimental determination of the Andreev reflection probability using ballistic point contact spectroscopy Materials Science and Engineering C. 15: 63-65. DOI: 10.1016/S0928-4931(01)00236-3  0.348
2001 Stahl H, Appenzeller J, Lengeler B, Martel R, Avouris P. Investigation of the inter-tube coupling in single-wall nanotube ropes Materials Science and Engineering C. 15: 291-294. DOI: 10.1016/S0928-4931(01)00229-6  0.32
2000 Uhlisch D, Lachenmann SG, Schäpers T, Braginski AI, Lüth H, Appenzeller J, Golubov AA, Ustinov AV. Splitting of the subgap resistance peak in superconductor/two-dimensional electron gas contacts at high magnetic fields Physical Review B - Condensed Matter and Materials Physics. 61: 12463-12466. DOI: 10.1103/Physrevb.61.12463  0.327
2000 Appenzeller J, Schroer C. Multimode transport in a T-shaped quantum transistor Journal of Applied Physics. 87: 3165-3167. DOI: 10.1063/1.372315  0.337
2000 Knoch J, Appenzeller J, Lengeler B. Preparation of highly transparent superconductor-semiconductor contacts Journal of Applied Physics. 88: 3522-3526. DOI: 10.1063/1.1288504  0.338
2000 Appenzeller J, Jakob M, Stahl H, Knoch J, Lengeler B. Spectroscopic measurements on the Andreev reflection probability as a function of temperature Applied Physics Letters. 77: 549-551. DOI: 10.1063/1.127040  0.316
2000 Appenzeller J, Martel R, Solomon P, Chan K, Avouris P, Knoch J, Benedict J, Tanner M, Thomas S, Wang KL, Del Alamo JA. Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 77: 298-300. DOI: 10.1063/1.126956  0.426
2000 Jakob M, Stahl H, Knoch J, Appenzeller J, Lengeler B, Hardtdegen H, Lüth H. Direct determination of the Andreev reflection probability by means of point contact spectroscopy Applied Physics Letters. 76: 1152-1154. DOI: 10.1063/1.125967  0.339
1998 Schäpers T, Appenzeller J, Hardtdegen H, Lüth H. Observation of quantized conductance in split-gate In0.53Ga0.47As/In0.77Ga0.23As/InP point contacts using Cr/Au p-InP Schottky barriers Journal of Applied Physics. 83: 2360-2362. DOI: 10.1063/1.366979  0.353
1996 Neurohr K, Golubov AA, Klocke T, Kaufmann J, Schäpers T, Appenzeller J, Uhlisch D, Ustinov AV, Hollfelder M, Lüth H, Braginski AI. Properties of lateral Nb contacts to a two-dimensional electron gas in an In0.77Ga0.23As/InP heterostructure Physical Review B - Condensed Matter and Materials Physics. 54: 17018-17028. DOI: 10.1103/Physrevb.54.17018  0.351
1996 Appenzeller J, Schroer C, Schäpers T, Hart AVD, Förster A, Lengeler B, Lüth H. Electron interference in a T-shaped quantum transistor based on Schottky-gate technology Physical Review B - Condensed Matter and Materials Physics. 53: 9959-9963. DOI: 10.1103/Physrevb.53.9959  0.411
1996 Tietze MF, Schäpers T, Appenzeller J, Engels G, Hollfelder M, Lengeler B, Lüth H. Quantized conductance in a split-gate point contact based on a pseudomorphic InGaAs/InP heterostructure Journal of Applied Physics. 79: 871-875. DOI: 10.1063/1.360907  0.414
1996 Uhlisch D, Kupriyanov MY, Golubov AA, Appenzeller J, Klocke T, Neurohr K, Ustinov AV, Braginski AI. Magnetoresistance of a lateral contact to a two-dimensional electron gas Physica B: Condensed Matter. 225: 197-201. DOI: 10.1016/0921-4526(96)86774-3  0.36
1995 Appenzeller J, Schäpers T, Hardtdegen H, Lengeler B, Lüth H. Aharonov-Bohm effect in quasi-one-dimensional In0.77Ga0.23As/InP rings Physical Review B. 51: 4336-4342. DOI: 10.1103/Physrevb.51.4336  0.306
1993 Hardtdegen H, Meyer R, Hollfelder M, Schäpers T, Appenzeller J, Løken-Larsen H, Klocke T, Dieker C, Lengeler B, Lüth H, Jäger W. Optimization of modulation-doped Ga1-xInxAs/InP heterostructures towards extremely high mobilities Journal of Applied Physics. 73: 4489-4493. DOI: 10.1063/1.352789  0.355
1992 Hardtdegen H, Meyer R, Løken-Larsen H, Appenzeller J, Schäpers T, Lüth H. Extremely high electron mobilities in modulation doped Ga1-xInxAs/InP heterostructures grown by LP-MOVPE Journal of Crystal Growth. 116: 521-523. DOI: 10.1016/0022-0248(92)90664-5  0.311
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