Susanne Stemmer - Publications

Affiliations: 
Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Condensed Matter Physics, Mathematics

297 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Salmani-Rezaie S, Ahadi K, Strickland WM, Stemmer S. Order-Disorder Ferroelectric Transition of Strained SrTiO_{3}. Physical Review Letters. 125: 087601. PMID 32909797 DOI: 10.1103/Physrevlett.125.087601  0.376
2020 Salmani-Rezaie S, Ahadi K, Stemmer S. Polar Nanodomains in a Ferroelectric Superconductor. Nano Letters. PMID 32786945 DOI: 10.1021/Acs.Nanolett.0C02285  0.355
2020 Cheng B, Kanda N, Ikeda TN, Matsuda T, Xia P, Schumann T, Stemmer S, Itatani J, Armitage NP, Matsunaga R. Efficient Terahertz Harmonic Generation with Coherent Acceleration of Electrons in the Dirac Semimetal Cd_{3}As_{2}. Physical Review Letters. 124: 117402. PMID 32242712 DOI: 10.1103/Physrevlett.124.117402  0.393
2020 Wu W, Combs NG, Mates TE, Stemmer S. Carbon impurity concentrations in BaSnO3 films grown by molecular beam epitaxy using a tin oxide source Journal of Vacuum Science & Technology A. 38: 043405. DOI: 10.1116/6.0000122  0.361
2020 Cheng J, Yang H, Wang C, Combs N, Freeze C, Shoron O, Wu W, Kalarickal NK, Chandrasekar H, Stemmer S, Rajan S, Lu W. Nanoscale etching of perovskite oxides for field effect transistor applications Journal of Vacuum Science & Technology B. 38: 12201. DOI: 10.1116/1.5122667  0.313
2020 Cheng J, Wang C, Freeze C, Shoron O, Combs N, Yang H, Kalarickal NK, Xia Z, Stemmer S, Rajan S, Lu W. High-Current Perovskite Oxide BaTiO 3 /BaSnO 3 Heterostructure Field Effect Transistors Ieee Electron Device Letters. 41: 621-624. DOI: 10.1109/Led.2020.2976456  0.35
2020 Kealhofer DA, Galletti L, Schumann T, Suslov A, Stemmer S. Topological Insulator State and Collapse of the Quantum Hall Effect in a Three-Dimensional Dirac Semimetal Heterojunction Physical Review X. 10: 11050. DOI: 10.1103/Physrevx.10.011050  0.326
2020 Porter Z, Need RF, Ahadi K, Zhao Y, Xu Z, Kirby BJ, Lynn JW, Stemmer S, Wilson SD. Correlating magnetic structure and magnetotransport in semimetal thin films of Eu 1 − x Sm x TiO 3 Physical Review Materials. 4: 54411. DOI: 10.1103/Physrevmaterials.4.054411  0.381
2020 Schumann T, Galletti L, Jeong H, Ahadi K, Strickland WM, Salmani-Rezaie S, Stemmer S. Possible signatures of mixed-parity superconductivity in doped polar SrTiO3 films Physical Review B. 101: 100503. DOI: 10.1103/Physrevb.101.100503  0.348
2020 Goyal M, Salmani-Rezaie S, Pardue TN, Guo B, Kealhofer DA, Stemmer S. Carrier mobilities of (001) cadmium arsenide films Apl Materials. 8: 51106. DOI: 10.1063/5.0002771  0.459
2020 Pardue T, Goyal M, Kim H, Stemmer S. Relating Crystal Symmetry to Topological Phases: Convergent Beam Electron Diffraction Studies of the Dirac Semimetal Cd3As2 Microscopy and Microanalysis. 1-4. DOI: 10.1017/S1431927620023600  0.302
2020 Chorsi HT, Yue S, Iyer PP, Goyal M, Schumann T, Stemmer S, Liao B, Schuller JA. Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd3As2 Advanced Optical Materials. 8: 1901192. DOI: 10.1002/Adom.201901192  0.33
2019 Mori R, Marshall PB, Ahadi K, Denlinger JD, Stemmer S, Lanzara A. Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface. Nature Communications. 10: 5534. PMID 31797932 DOI: 10.1038/S41467-019-13046-Z  0.402
2019 Ahadi K, Galletti L, Li Y, Salmani-Rezaie S, Wu W, Stemmer S. Enhancing superconductivity in SrTiO films with strain. Science Advances. 5: eaaw0120. PMID 31032417 DOI: 10.1126/Sciadv.Aaw0120  0.415
2019 Xia Z, Wang C, Kalarickal NK, Stemmer S, Rajan S. Design of Transistors Using High-Permittivity Materials Ieee Transactions On Electron Devices. 66: 896-900. DOI: 10.1109/Ted.2018.2888834  0.302
2019 Yue S, Chorsi HT, Goyal M, Schumann T, Yang R, Xu T, Deng B, Stemmer S, Schuller JA, Liao B. Soft phonons and ultralow lattice thermal conductivity in the Dirac semimetal Cd3As2 Arxiv: Materials Science. 1. DOI: 10.1103/Physrevresearch.1.033101  0.342
2019 Salmani-Rezaie S, Kim H, Ahadi K, Stemmer S. Lattice relaxations around individual dopant atoms in SrTiO3 Physical Review Materials. 3: 114404. DOI: 10.1103/Physrevmaterials.3.114404  0.397
2019 Russell R, Ratcliff N, Ahadi K, Dong L, Stemmer S, Harter JW. Ferroelectric enhancement of superconductivity in compressively strained SrTiO3 films Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.091401  0.401
2019 Kim H, Goyal M, Salmani-Rezaie S, Schumann T, Pardue TN, Zuo JM, Stemmer S. Point group symmetry of cadmium arsenide thin films determined by convergent beam electron diffraction Physical Review Materials. 3: 84202. DOI: 10.1103/Physrevmaterials.3.084202  0.339
2019 Goyal M, Kim H, Schumann T, Galletti L, Burkov AA, Stemmer S. Surface states of strained thin films of the Dirac semimetal Cd3As2 Physical Review Materials. 3: 64204. DOI: 10.1103/Physrevmaterials.3.064204  0.318
2019 Ahadi K, Lu X, Salmani-Rezaie S, Marshall PB, Rondinelli JM, Stemmer S. Anisotropic magnetoresistance in the itinerant antiferromagnetic EuTiO3 Physical Review B. 99. DOI: 10.1103/Physrevb.99.041106  0.31
2019 Shoron OF, Schumann T, Goyal M, Kealhofer DA, Stemmer S. Field-effect transistors with the three-dimensional Dirac semimetal cadmium arsenide Applied Physics Letters. 115: 62101. DOI: 10.1063/1.5103268  0.324
2019 Chandrasekar H, Cheng J, Wang T, Xia Z, Combs NG, Freeze CR, Marshall PB, McGlone J, Arehart A, Ringel S, Janotti A, Stemmer S, Lu W, Rajan S. Velocity saturation in La-doped BaSnO3 thin films Applied Physics Letters. 115: 92102. DOI: 10.1063/1.5097791  0.408
2018 Stemmer S, Allen SJ. Non-Fermi liquids in oxide heterostructures. Reports On Progress in Physics. Physical Society (Great Britain). PMID 29651990 DOI: 10.1088/1361-6633/Aabdfa  0.378
2018 Schumann T, Galletti L, Kealhofer DA, Kim H, Goyal M, Stemmer S. Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal Cd_{3}As_{2}. Physical Review Letters. 120: 016801. PMID 29350963 DOI: 10.1103/Physrevlett.120.016801  0.376
2018 Need RF, Marshall PB, Weschke E, Grutter AJ, Gilbert DA, Arenholz E, Shafer P, Stemmer S, Wilson SD. Resolving interfacial charge transfer in titanate superlattices using resonant x-ray reflectometry Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.093801  0.391
2018 Marshall PB, Ahadi K, Kim H, Stemmer S. Electron nematic fluid in a strained Sr3Ru2O7 film Physical Review B. 97: 155160. DOI: 10.1103/Physrevb.97.155160  0.385
2018 Galletti L, Schumann T, Shoron OF, Goyal M, Kealhofer DA, Kim H, Stemmer S. Two-dimensional Dirac fermions in thin films of Cd3As2 Physical Review B. 97: 115132. DOI: 10.1103/Physrevb.97.115132  0.313
2018 Ahadi K, Gui Z, Porter Z, Lynn JW, Xu ZN, Wilson SD, Janotti A, Stemmer S. Carrier density control of magnetism and Berry phases in doped EuTiO3 Apl Materials. 6: 56105. DOI: 10.1063/1.5025317  0.358
2018 Ahadi K, Kim H, Stemmer S. Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface Apl Materials. 6: 56102. DOI: 10.1063/1.5025169  0.361
2018 Goyal M, Galletti L, Salmani-Rezaie S, Schumann T, Kealhofer DA, Stemmer S. Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2 Apl Materials. 6: 26105. DOI: 10.1063/1.5016866  0.414
2018 Need RF, Isaac BJ, Kirby BJ, Borchers JA, Stemmer S, Wilson SD. Octahedral tilt independent magnetism in confined GdTiO3 films Applied Physics Letters. 112: 132407. DOI: 10.1063/1.5016174  0.395
2017 Kim H, Marshall PB, Ahadi K, Mates TE, Mikheev E, Stemmer S. Response of the Lattice across the Filling-Controlled Mott Metal-Insulator Transition of a Rare Earth Titanate. Physical Review Letters. 119: 186803. PMID 29219551 DOI: 10.1103/Physrevlett.119.186803  0.36
2017 Marshall PB, Kim H, Stemmer S. Disorder versus two transport lifetimes in a strongly correlated electron liquid. Scientific Reports. 7: 10312. PMID 28871210 DOI: 10.1038/S41598-017-10841-W  0.336
2017 Ahadi K, Stemmer S. Novel Metal-Insulator Transition at the SmTiO_{3}/SrTiO_{3} Interface. Physical Review Letters. 118: 236803. PMID 28644662 DOI: 10.1103/Physrevlett.118.236803  0.373
2017 Hardy WJ, Isaac B, Marshall P, Mikheev E, Zhou P, Stemmer S, Natelson D. Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO3/SrTiO3/SmTiO3 Quantum Well Structures. Acs Nano. PMID 28350436 DOI: 10.1021/Acsnano.6B08427  0.385
2017 Schumann T, Goyal M, Kealhofer DA, Stemmer S. Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal C d 3 A s 2 Physical Review B. 95: 241113. DOI: 10.1103/Physrevb.95.241113  0.436
2017 Meyers CJG, Freeze CR, Stemmer S, York RA. Effect of BST film thickness on the performance of tunable interdigital capacitors grown by MBE Applied Physics Letters. 111: 262903. DOI: 10.1063/1.5004566  0.395
2017 Marshall PB, Kim H, Ahadi K, Stemmer S. Growth of strontium ruthenate films by hybrid molecular beam epitaxy Apl Materials. 5: 96101. DOI: 10.1063/1.4998772  0.465
2017 Ahadi K, Galletti L, Stemmer S. Evidence of a topological Hall effect in Eu1−xSmxTiO3 Applied Physics Letters. 111: 172403. DOI: 10.1063/1.4997498  0.406
2017 Shoron OF, Raghavan S, Freeze CR, Stemmer S. BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors Applied Physics Letters. 110: 232902. DOI: 10.1063/1.4985014  0.419
2017 Ahadi K, Shoron OF, Marshall PB, Mikheev E, Stemmer S. Electric field effect near the metal-insulator transition of a two-dimensional electron system in SrTiO3 Applied Physics Letters. 110: 62104. DOI: 10.1063/1.4975806  0.38
2017 Kim H, Raghavan S, Shoron O, Stemmer S. Probing Disorder in MBE-grown Oxide Films Using Quantitative STEM Microscopy and Microanalysis. 23: 1578-1579. DOI: 10.1017/S1431927617008558  0.35
2016 Marshall PB, Mikheev E, Raghavan S, Stemmer S. Pseudogaps and Emergence of Coherence in Two-Dimensional Electron Liquids in SrTiO_{3}. Physical Review Letters. 117: 046402. PMID 27494486 DOI: 10.1103/Physrevlett.117.046402  0.32
2016 Raghavan S, Zhang JY, Shoron OF, Stemmer S. Probing the Metal-Insulator Transition in BaTiO_{3} by Electrostatic Doping. Physical Review Letters. 117: 037602. PMID 27472141 DOI: 10.1103/Physrevlett.117.037602  0.394
2016 Need RF, Isaac BJ, Kirby BJ, Borchers JA, Stemmer S, Wilson SD. Interface-Driven Ferromagnetism within the Quantum Wells of a Rare Earth Titanate Superlattice. Physical Review Letters. 117: 037205. PMID 27472135 DOI: 10.1103/Physrevlett.117.037205  0.331
2016 Zhang JY, Kim H, Mikheev E, Hauser AJ, Stemmer S. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films. Scientific Reports. 6: 23652. PMID 27033955 DOI: 10.1038/Srep23652  0.414
2016 Mikheev E, Raghavan S, Zhang JY, Marshall PB, Kajdos AP, Balents L, Stemmer S. Carrier density independent scattering rate in SrTiO3-based electron liquids. Scientific Reports. 6: 20865. PMID 26861764 DOI: 10.1038/Srep20865  0.306
2016 Bjaalie L, Azcatl A, McDonnell S, Freeze CR, Stemmer S, Wallace RM, Walle CGVd. Band alignments between SmTiO3, GdTiO3, and SrTiO3 Journal of Vacuum Science and Technology. 34: 61102. DOI: 10.1116/1.4963833  0.329
2016 Schumann T, Raghavan S, Ahadi K, Kim H, Stemmer S. Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4959004  0.414
2016 Kim H, Zhang JY, Raghavan S, Stemmer S. Direct Observation of Sr Vacancies in SrTiO 3 by Quantitative Scanning Transmission Electron Microscopy Physical Review X. 6: 41063. DOI: 10.1103/Physrevx.6.041063  0.356
2016 Nemšák S, Conti G, Gray AX, Palsson GK, Conlon C, Eiteneer D, Keqi A, Rattanachata A, Saw AY, Bostwick A, Moreschini L, Rotenberg E, Strocov VN, Kobayashi M, Schmitt T, ... ... Stemmer S, et al. Energetic, spatial, and momentum character of the electronic structure at a buried interface: The two-dimensional electron gas between two metal oxides Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.245103  0.788
2016 Schumann T, Goyal M, Kim H, Stemmer S. Molecular beam epitaxy of Cd3As2 on a III-V substrate Apl Materials. 4: 126110. DOI: 10.1063/1.4972999  0.429
2016 Freeze CR, Stemmer S. Role of film stoichiometry and interface quality in the performance of (Ba,Sr)TiO3 tunable capacitors with high figures of merit Applied Physics Letters. 109: 192904. DOI: 10.1063/1.4967374  0.41
2016 Meyers CJG, Freeze CR, Stemmer S, York RA. (Ba,Sr)TiO3 tunable capacitors with RF commutation quality factors exceeding 6000 Applied Physics Letters. 109. DOI: 10.1063/1.4961626  0.339
2016 James Allen S, Raghavan S, Schumann T, Law KM, Stemmer S. Conduction band edge effective mass of La-doped BaSnO3 Applied Physics Letters. 108. DOI: 10.1063/1.4954671  0.374
2016 Verma A, Nomoto K, Hwang WS, Raghavan S, Stemmer S, Jena D. Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4948770  0.439
2016 Raghavan S, Schumann T, Kim H, Zhang JY, Cain TA, Stemmer S. High-mobility BaSnO3 grown by oxide molecular beam epitaxy Apl Materials. 4. DOI: 10.1063/1.4939657  0.455
2016 Eiteneer D, Pálsson GK, Nemšák S, Gray AX, Kaiser AM, Son J, LeBeau J, Conti G, Greer AA, Keqi A, Rattanachata A, Saw AY, Bostwick A, Rotenberg E, Gullikson EM, ... ... Stemmer S, et al. Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO3/SrTiO3 Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission Journal of Electron Spectroscopy and Related Phenomena. 211: 70-81. DOI: 10.1016/J.Elspec.2016.04.008  0.711
2015 Mikheev E, Hauser AJ, Himmetoglu B, Moreno NE, Janotti A, Van de Walle CG, Stemmer S. Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films. Science Advances. 1: e1500797. PMID 26601140 DOI: 10.1126/Sciadv.1500797  0.331
2015 Lee D, Lu H, Gu Y, Choi SY, Li SD, Ryu S, Paudel TR, Song K, Mikheev E, Lee S, Stemmer S, Tenne DA, Oh SH, Tsymbal EY, Wu X, et al. Emergence of room-temperature ferroelectricity at reduced dimensions. Science (New York, N.Y.). 349: 1314-1317. PMID 26383947 DOI: 10.1126/Science.Aaa6442  0.368
2015 Zhang JY, Hwang J, Isaac BJ, Stemmer S. Variable-angle high-angle annular dark-field imaging: application to three-dimensional dopant atom profiling. Scientific Reports. 5: 12419. PMID 26206489 DOI: 10.1038/Srep12419  0.333
2015 Mikheev E, Hwang J, Kajdos AP, Hauser AJ, Stemmer S. Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control. Scientific Reports. 5: 11079. PMID 26056783 DOI: 10.1038/Srep11079  0.304
2015 Son J, Chobpattana V, McSkimming BM, Stemmer S. In-situ nitrogen plasma passivation of Al2O3/GaN interface states Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4905846  0.569
2015 Mikheev E, Freeze CR, Isaac BJ, Cain TA, Stemmer S. Separation of transport lifetimes in SrTi O3 -based two-dimensional electron liquids Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.165125  0.312
2015 Nemšák S, Conti G, Palsson GK, Conlon C, Cho S, Rault JE, Avila J, Asensio MC, Jackson CA, Moetakef P, Janotti A, Bjaalie L, Himmetoglu B, Van De Walle CG, Balents L, ... ... Stemmer S, et al. Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO3 embedded in GdTiO3 Applied Physics Letters. 107. DOI: 10.1063/1.4936936  0.776
2015 Verma A, Raghavan S, Stemmer S, Jena D. Ferroelectric transition in compressively strained SrTiO3 thin films Applied Physics Letters. 107. DOI: 10.1063/1.4935592  0.416
2015 Mikheev E, Raghavan S, Stemmer S. Dielectric response of metal/SrTiO3/two-dimensional electron liquid heterostructures Applied Physics Letters. 107. DOI: 10.1063/1.4928751  0.395
2015 Bjaalie L, Ouellette DG, Moetakef P, Cain TA, Janotti A, Himmetoglu B, Allen SJ, Stemmer S, Van De Walle CG. Small hole polarons in rare-earth titanates Applied Physics Letters. 106. DOI: 10.1063/1.4922316  0.704
2015 Raghavan S, Zhang JY, Stemmer S. Two-dimensional electron liquid at the (111) SmTiO3/SrTiO3 interface Applied Physics Letters. 106. DOI: 10.1063/1.4916963  0.42
2015 Bubel S, Hauser AJ, Glaudell AM, Mates TE, Stemmer S, Chabinyc ML. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates Applied Physics Letters. 106. DOI: 10.1063/1.4915269  0.362
2015 Hauser AJ, Mikheev E, Moreno NE, Hwang J, Zhang JY, Stemmer S. Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films Applied Physics Letters. 106. DOI: 10.1063/1.4914002  0.386
2015 Mikheev E, Himmetoglu B, Kajdos AP, Moetakef P, Cain TA, Van De Walle CG, Stemmer S. Limitations to the room temperature mobility of two- and three-dimensional electron liquids in SrTiO3 Applied Physics Letters. 106. DOI: 10.1063/1.4907888  0.721
2015 Allen SJ, Hauser AJ, Mikheev E, Zhang JY, Moreno NE, Son J, Ouellette DG, Kally J, Kozhanov A, Balents L, Stemmer S. Gaps and pseudogaps in perovskite rare earth nickelates Apl Materials. 3. DOI: 10.1063/1.4907771  0.559
2014 Jackson CA, Zhang JY, Freeze CR, Stemmer S. Quantum critical behaviour in confined SrTiO3 quantum wells embedded in antiferromagnetic SmTiO3. Nature Communications. 5: 4258. PMID 25005611 DOI: 10.1038/Ncomms5258  0.557
2014 Elias DC, Sivananthan A, Zhang C, Keller S, Chiang HW, Law JJM, Thibeault BJ, Mitchell WJ, Lee S, Carter AD, Huang CY, Chobpattana V, Stemmer S, Denbaars SP, Coldren LA, et al. Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls Japanese Journal of Applied Physics. 53. DOI: 10.7567/Jjap.53.065503  0.338
2014 Stemmer S, James Allen S. Two-dimensional electron gases at complex oxide interfaces Annual Review of Materials Research. 44: 151-171. DOI: 10.1146/Annurev-Matsci-070813-113552  0.378
2014 Verma A, Kajdos AP, Cain TA, Stemmer S, Jena D. Intrinsic mobility limiting mechanisms in lanthanum-doped strontium titanate Physical Review Letters. 112. DOI: 10.1103/Physrevlett.112.216601  0.342
2014 Hardy WJ, Ji H, Mikheev E, Stemmer S, Natelson D. Nanostructure investigations of nonlinear differential conductance in NdNiO3 thin films Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.205117  0.361
2014 Zhang JY, Jackson CA, Chen R, Raghavan S, Moetakef P, Balents L, Stemmer S. Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO 3 quantum wells Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.075140  0.775
2014 Kajdos AP, Stemmer S. Surface reconstructions in molecular beam epitaxy of SrTiO3 Applied Physics Letters. 105. DOI: 10.1063/1.4901726  0.414
2014 Chobpattana V, Mikheev E, Zhang JY, Mates TE, Stemmer S. Extremely scaled high- k /In0.53Ga0.47As gate stacks with low leakage and low interface trap densities Journal of Applied Physics. 116. DOI: 10.1063/1.4896494  0.389
2014 Verma A, Raghavan S, Stemmer S, Jena D. Au-gated SrTiO3field-effect transistors with large electron concentration and current modulation Applied Physics Letters. 105. DOI: 10.1063/1.4896275  0.429
2014 Thompson J, Hwang J, Nichols J, Connell JG, Stemmer S, Seo SSA. Alleviating polarity-conflict at the heterointerfaces of KTaO3/GdScO3polar complex-oxides Applied Physics Letters. 105. DOI: 10.1063/1.4895392  0.323
2014 Chobpattana V, Mates TE, Zhang JY, Stemmer S. Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities Applied Physics Letters. 104. DOI: 10.1063/1.4875977  0.38
2014 Boucherit M, Shoron O, Jackson CA, Cain TA, Buffon MLC, Polchinski C, Stemmer S, Rajan S. Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures Applied Physics Letters. 104: 182904. DOI: 10.1063/1.4875796  0.602
2014 Hwang J, Zhang JY, D'Alfonso AJ, Allen LJ, Stemmer S. Three-dimensional observation of dopant atoms in quantitative scanning transmission electron microscopy Microscopy and Microanalysis. 20: 52-53. DOI: 10.1017/S1431927614001986  0.333
2013 Hwang J, Zhang JY, D'Alfonso AJ, Allen LJ, Stemmer S. Three-dimensional imaging of individual dopant atoms in SrTiO3. Physical Review Letters. 111: 266101. PMID 24483805 DOI: 10.1103/Physrevlett.111.266101  0.304
2013 Ouellette DG, Moetakef P, Cain TA, Zhang JY, Stemmer S, Emin D, Allen SJ. High-density two-dimensional small polaron gas in a delta-doped Mott insulator. Scientific Reports. 3: 3284. PMID 24257578 DOI: 10.1038/Srep03284  0.748
2013 Zhang JY, Hwang J, Raghavan S, Stemmer S. Symmetry lowering in extreme-electron-density perovskite quantum wells. Physical Review Letters. 110: 256401. PMID 23829748 DOI: 10.1103/Physrevlett.110.256401  0.389
2013 Stemmer S, Moetakef P, Cain T, Jackson C, Ouellette D, Williams JR, Goldhaber-Gordon D, Balents L, Allen SJ. Properties of high-density, two-dimensional electron gases at Mott/band insulator interfaces Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2009086  0.791
2013 Moetakef P, Zhang JY, Raghavan S, Kajdos AP, Stemmer S. Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4804180  0.745
2013 Jackson CA, Stemmer S. Interface-induced magnetism in perovskite quantum wells Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.180403  0.579
2013 Zhang JY, Jackson CA, Raghavan S, Hwang J, Stemmer S. Magnetism and local structure in low-dimensional Mott insulating GdTiO 3 Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.121104  0.624
2013 Allen SJ, Jalan B, Lee S, Ouellette DG, Khalsa G, Jaroszynski J, Stemmer S, Macdonald AH. Conduction-band edge and Shubnikov-de Haas effect in low-electron-density SrTiO3 Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.045114  0.678
2013 Hwang J, Son J, Zhang JY, Janotti A, Van de Walle CG, Stemmer S. Structural origins of the properties of rare earth nickelate superlattices Physical Review B. 87. DOI: 10.1103/Physrevb.87.060101  0.646
2013 Raghavan S, James Allen S, Stemmer S. Subband structure of two-dimensional electron gases in SrTiO3 Applied Physics Letters. 103. DOI: 10.1063/1.4831976  0.41
2013 Hauser AJ, Mikheev E, Moreno NE, Cain TA, Hwang J, Zhang JY, Stemmer S. Temperature-dependence of the Hall coefficient of NdNiO3 thin films Applied Physics Letters. 103: 182105. DOI: 10.1063/1.4828557  0.36
2013 Chobpattana V, Mates TE, Mitchell WJ, Zhang JY, Stemmer S. Influence of plasma-based in-situ surface cleaning procedures on HfO 2/In0.53Ga0.47As gate stack properties Journal of Applied Physics. 114. DOI: 10.1063/1.4825259  0.347
2013 Kajdos AP, Ouellette DG, Cain TA, Stemmer S. Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti, Zr)O3 heterostructure Applied Physics Letters. 103. DOI: 10.1063/1.4819203  0.417
2013 Boucherit M, Shoron OF, Cain TA, Jackson CA, Stemmer S, Rajan S. Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4811273  0.585
2013 Cain TA, Kajdos AP, Stemmer S. La-doped SrTiO3 films with large cryogenic thermoelectric power factors Applied Physics Letters. 102. DOI: 10.1063/1.4804182  0.392
2013 Conti G, Kaiser AM, Gray AX, Nemšák S, Pálsson GK, Son J, Moetakef P, Janotti A, Bjaalie L, Conlon CS, Eiteneer D, Greer AA, Keqi A, Rattanachata A, Saw AY, ... ... Stemmer S, et al. Band offsets in complex-oxide thin films and heterostructures of SrTiO 3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy Journal of Applied Physics. 113. DOI: 10.1063/1.4795612  0.777
2013 Chobpattana V, Son J, Law JJM, Engel-Herbert R, Huang C, Stemmer S. Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities Applied Physics Letters. 102: 22907. DOI: 10.1063/1.4776656  0.6
2013 Hwang J, Zhang J, Son J, Mikheev E, Hauser A, Stemmer S. Quantification of Epitaxial Strain and Crystal Structure in Nanoscale Oxide Films Using Position Averaged Convergent Beam Electron Diffraction Microscopy and Microanalysis. 19: 686-687. DOI: 10.1017/S1431927613005424  0.398
2012 Moetakef P, Williams JR, Ouellette DG, Kajdos AP, Goldhaber-Gordon D, Allen SJ, Stemmer S. Erratum: Carrier-Controlled Ferromagnetism in SrTiO 3 [Phys. Rev. X 2, 021014 (2012)] Physical Review X. 2: 39901. DOI: 10.1103/Physrevx.2.039901  0.683
2012 Moetakef P, Williams JR, Ouellette DG, Kajdos AP, Goldhaber-Gordon D, Allen SJ, Stemmer S. Carrier-controlled ferromagnetism in SrTiO3 Physical Review X. 2. DOI: 10.1103/Physrevx.2.021014  0.766
2012 Moetakef P, Jackson CA, Hwang J, Balents L, Allen SJ, Stemmer S. Toward an artificial Mott insulator: Correlations in confined high-density electron liquids in SrTiO 3 Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.201102  0.772
2012 LeBeau JM, Findlay SD, Allen LJ, Stemmer S. Quantitative STEM: Experimental methods and applications Journal of Physics: Conference Series. 371. DOI: 10.1088/1742-6596/371/1/012053  0.516
2012 Mikheev E, Kajdos AP, Hauser AJ, Stemmer S. Electric field-tunable BaxSr1-xTiO3 films with high figures of merit grown by molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4773034  0.43
2012 Moetakef P, Ouellette DG, Williams JR, James Allen S, Balents L, Goldhaber-Gordon D, Stemmer S. Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface Applied Physics Letters. 101. DOI: 10.1063/1.4758989  0.731
2012 Cain TA, Moetakef P, Jackson CA, Stemmer S. Modulation doping to control the high-density electron gas at a polar/non-polar oxide interface Applied Physics Letters. 101. DOI: 10.1063/1.4752439  0.785
2012 Son J, Chobpattana V, McSkimming BM, Stemmer S. Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures Applied Physics Letters. 101. DOI: 10.1063/1.4751466  0.598
2012 Kaiser AM, Gray AX, Conti G, Jalan B, Kajdos AP, Gloskovskii A, Ueda S, Yamashita Y, Kobayashi K, Drube W, Stemmer S, Fadley CS. Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.4731642  0.674
2012 Janotti A, Jalan B, Stemmer S, Van De Walle CG. Effects of doping on the lattice parameter of SrTiO 3 Applied Physics Letters. 100. DOI: 10.1063/1.4730998  0.665
2012 Jackson CA, Moetakef P, James Allen S, Stemmer S. Capacitance-voltage analysis of high-carrier-density SrTiO 3/GdTiO 3 heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4726263  0.787
2012 Stemmer S, Chobpattana V, Rajan S. Frequency dispersion in III-V metal-oxide-semiconductor capacitors Applied Physics Letters. 100. DOI: 10.1063/1.4724330  0.338
2012 Hwang J, Zhang JY, Son J, Stemmer S. Nanoscale quantification of octahedral tilts in perovskite films Applied Physics Letters. 100. DOI: 10.1063/1.4714734  0.64
2012 Cain TA, Lee S, Moetakef P, Balents L, Stemmer S, James Allen S. Seebeck coefficient of a quantum confined, high-electron-density electron gas in SrTiO 3 Applied Physics Letters. 100. DOI: 10.1063/1.4704363  0.751
2012 Hwang J, Zhang J, Son J, Stemmer S. Quantifying Octahedral Rotations in Ultrathin LaNiO3 Films Using Position Averaged Convergent Beam Electron Diffraction Microscopy and Microanalysis. 18: 1844-1845. DOI: 10.1017/S1431927612011075  0.387
2012 Moetakef P, Ouellette DG, Zhang JY, Cain TA, Allen SJ, Stemmer S. Growth and properties of GdTiO 3 films prepared by hybrid molecular beam epitaxy Journal of Crystal Growth. 355: 166-170. DOI: 10.1016/J.Jcrysgro.2012.06.052  0.76
2012 Julian N, Mages P, Zhang C, Zhang J, Kraemer S, Stemmer S, Denbaars S, Coldren L, Petroff P, Bowers J. Coalescence of InP epitaxial lateral overgrowth by MOVPE with V/III ratio variation Journal of Electronic Materials. 41: 845-852. DOI: 10.1007/S11664-012-2020-Y  0.314
2011 Forbes BD, D'Alfonso AJ, Findlay SD, Van Dyck D, Lebeau JM, Stemmer S, Allen LJ. Thermal diffuse scattering in transmission electron microscopy. Ultramicroscopy. 111: 1670-80. PMID 22088442 DOI: 10.1016/J.Ultramic.2011.09.017  0.555
2011 Kaiser AM, Gray AX, Conti G, Son J, Greer A, Perona A, Rattanachata A, Saw AY, Bostwick A, Yang S, Yang SH, Gullikson EM, Kortright JB, Stemmer S, Fadley CS. Suppression of near-Fermi level electronic states at the interface in a LaNiO3/SrTiO3 superlattice. Physical Review Letters. 107: 116402. PMID 22026689 DOI: 10.1103/Physrevlett.107.116402  0.622
2011 Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK. Charged defect quantification in PtAl2O3In 0.53Ga0.47AsInP MOS capacitors Journal of the Electrochemical Society. 158: G103-G107. DOI: 10.1149/1.3545799  0.363
2011 Burek GJ, Hwang Y, Carter AD, Chobpattana V, Law JJM, Mitchell WJ, Thibeault B, Stemmer S, Rodwell MJW. Influence of gate metallization processes on the electrical characteristics of high-k/In 0.53Ga0.47 As interfaces Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3610989  0.646
2011 Burke PG, Lu H, Rudawski NG, Stemmer S, Gossard AC, Bahk JH, Bowers JE. Electrical properties of Er-doped In0.53Ga0.47As Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3559480  0.383
2011 LeBeau JM, Findlay SD, D'Alfonso AJ, Allen LJ, Stemmer S. Counting atoms with quantitative scanning transmission electron microscopy Acta Crystallographica Section A. 67: 105-105. DOI: 10.1107/S010876731109742X  0.578
2011 Allen LJ, D'Alfonso AJ, Forbes BD, Lugg NR, Martin AV, Findlay SD, LeBeau JM, Stemmer S. Modelling thermal scattering and solving structures using Z-contrast imaging Acta Crystallographica Section A. 67: 155-156. DOI: 10.1107/S0108767311096176  0.522
2011 Gray AX, Janotti A, Son J, Lebeau JM, Ueda S, Yamashita Y, Kobayashi K, Kaiser AM, Sutarto R, Wadati H, Sawatzky GA, Van De Walle CG, Stemmer S, Fadley CS. Insulating state of ultrathin epitaxial LaNiO3 thin films detected by hard x-ray photoemission Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075104  0.717
2011 Moetakef P, Cain TA, Ouellette DG, Zhang JY, Klenov DO, Janotti A, Van De Walle CG, Rajan S, Allen SJ, Stemmer S. Electrostatic carrier doping of GdTiO 3/SrTiO 3 interfaces Applied Physics Letters. 99. DOI: 10.1063/1.3669402  0.76
2011 Keeble DJ, Jalan B, Ravelli L, Egger W, Kanda G, Stemmer S. Suppression of vacancy defects in epitaxial La-doped SrTiO 3 films Applied Physics Letters. 99. DOI: 10.1063/1.3664398  0.67
2011 Son J, Jalan B, Kajdos AP, Balents L, James Allen S, Stemmer S. Probing the metal-insulator transition of NdNiO3 by electrostatic doping Applied Physics Letters. 99. DOI: 10.1063/1.3659310  0.746
2011 Son J, Rajan S, Stemmer S, James Allen S. A heterojunction modulation-doped Mott transistor Journal of Applied Physics. 110. DOI: 10.1063/1.3651612  0.585
2011 Saddik GN, Son J, Stemmer S, York RA. Improvement of barium strontium titanate solidly mounted resonator quality factor by reduction in electrode surface roughness Journal of Applied Physics. 109. DOI: 10.1063/1.3581204  0.523
2011 Oh DW, Ravichandran J, Liang CW, Siemons W, Jalan B, Brooks CM, Huijben M, Schlom DG, Stemmer S, Martin LW, Majumdar A, Ramesh R, Cahill DG. Thermal conductivity as a metric for the crystalline quality of SrTiO 3 epitaxial layers Applied Physics Letters. 98. DOI: 10.1063/1.3579993  0.661
2011 Hwang Y, Chobpattana V, Zhang JY, Lebeau JM, Engel-Herbert R, Stemmer S. Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors Applied Physics Letters. 98. DOI: 10.1063/1.3575569  0.742
2011 Jalan B, Allen SJ, Beltz GE, Moetakef P, Stemmer S. Enhancing the electron mobility of SrTiO3 with strain Applied Physics Letters. 98. DOI: 10.1063/1.3571447  0.805
2011 Moetakef P, Zhang JY, Kozhanov A, Jalan B, Seshadri R, Allen SJ, Stemmer S. Transport in ferromagnetic GdTiO3 / SrTiO3 heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3568894  0.81
2011 Hwang Y, Engel-Herbert R, Stemmer S. Influence of trimethylaluminum on the growth and properties of HfO 2 / In0.53 Ga0.47 As interfaces Applied Physics Letters. 98. DOI: 10.1063/1.3553275  0.623
2011 Lebeau JM, D'Alfonso AJ, Wright NJ, Allen LJ, Stemmer S. Determining ferroelectric polarity at the nanoscale Applied Physics Letters. 98. DOI: 10.1063/1.3549300  0.607
2011 LeBeau JM, Findlay SD, Allen LJ, Stemmer S. Erratum: Standardless atom counting in scanning transmission electron microscopy (Nano Letters (2010) 10 (4405) Nano Letters. 11. DOI: 10.1021/Nl1042215  0.58
2011 LeBeau J, D'Alfonso A, Allen L, Stemmer S. Determination of Thin-Film Ferroelectric Polarity at the Nanoscale Microscopy and Microanalysis. 17: 1366-1367. DOI: 10.1017/S1431927611007707  0.593
2011 Zhang J, LeBeau J, D'Alfonso A, Allen L, Stemmer S. Exploring the Strain Sensitivity of Image Contrast in Quantitative STEM of SrTiO3 Microscopy and Microanalysis. 17: 1310-1311. DOI: 10.1017/S1431927611007422  0.524
2010 LeBeau JM, Findlay SD, Allen LJ, Stemmer S. Standardless atom counting in scanning transmission electron microscopy. Nano Letters. 10: 4405-8. PMID 20945926 DOI: 10.1021/Nl102025S  0.595
2010 Son J, Moetakef P, Jalan B, Bierwagen O, Wright NJ, Engel-Herbert R, Stemmer S. Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V(-1) s(-1). Nature Materials. 9: 482-4. PMID 20364139 DOI: 10.1038/Nmat2750  0.833
2010 Lebeau JM, Findlay SD, Allen LJ, Stemmer S. Position averaged convergent beam electron diffraction: theory and applications. Ultramicroscopy. 110: 118-25. PMID 19939565 DOI: 10.1016/J.Ultramic.2009.10.001  0.602
2010 Saddik GN, Son J, Stemmer S, York RA. Towards a high quality factor dc electric field switchable barium strontium titanate solidly mounted resonator Materials Research Society Symposium Proceedings. 1199: 27-31. DOI: 10.1557/Proc-1199-F06-16  0.544
2010 Jalan B, Stemmer S, MacK S, Allen SJ. Two-dimensional electron gas in δ -doped SrTiO3 Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.081103  0.662
2010 Engel-Herbert R, Hwang Y, Stemmer S. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces Journal of Applied Physics. 108. DOI: 10.1063/1.3520431  0.628
2010 Son J, Lebeau JM, Allen SJ, Stemmer S. Conductivity enhancement of ultrathin LaNiO3 films in superlattices Applied Physics Letters. 97. DOI: 10.1063/1.3511738  0.714
2010 Engel-Herbert R, Hwang Y, Stemmer S. Quantification of trap densities at dielectric/III-V semiconductor interfaces Applied Physics Letters. 97. DOI: 10.1063/1.3479047  0.625
2010 Jalan B, Stemmer S. Large Seebeck coefficients and thermoelectric power factor of La-doped SrTiO3 thin films Applied Physics Letters. 97. DOI: 10.1063/1.3471398  0.667
2010 Hwang Y, Engel-Herbert R, Rudawski NG, Stemmer S. Effect of postdeposition anneals on the Fermi level response of HfO 2/In0.53Ga0.47 As gate stacks Journal of Applied Physics. 108. DOI: 10.1063/1.3465524  0.637
2010 Booth JC, Orloff ND, Cagnon J, Lu J, Stemmer S. Temperature-dependent dielectric relaxation in bismuth zinc niobate thin films Applied Physics Letters. 97. DOI: 10.1063/1.3455897  0.377
2010 Hwang Y, Engel-Herbert R, Rudawski NG, Stemmer S. Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces Applied Physics Letters. 96. DOI: 10.1063/1.3360221  0.626
2010 Son J, Moetakef P, Lebeau JM, Ouellette D, Balents L, Allen SJ, Stemmer S. Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO 3 films Applied Physics Letters. 96. DOI: 10.1063/1.3309713  0.807
2010 Stemmer S, LeBeau J, Findlay S, D'Alfonso A, Allen L. Towards Quantitative Analysis of STEM Image Contrast of Interfaces and Surfaces Microscopy and Microanalysis. 16: 1472-1473. DOI: 10.1017/S1431927610061684  0.542
2010 Buehl TE, Lebeau JM, Stemmer S, Scarpulla MA, Palmstrøm CJ, Gossard AC. Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy Journal of Crystal Growth. 312: 2089-2092. DOI: 10.1016/J.Jcrysgro.2010.04.031  0.586
2009 Bougeard D, Sircar N, Ahlers S, Lang V, Abstreiter G, Trampert A, Lebeau JM, Stemmer S, Saxey DW, Cerezo A. Ge(1-x) Mn(x) clusters: central structural and magnetic building blocks of nanoscale wire-like self-assembly in a magnetic semiconductor. Nano Letters. 9: 3743-8. PMID 19751066 DOI: 10.1021/Nl901928F  0.544
2009 Engel-Herbert R, Hwang Y, LeBeau JM, Zheng Y, Stemmer S. Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As Materials Research Society Symposium Proceedings. 1155: 111-117. DOI: 10.1557/Proc-1155-C13-02  0.743
2009 Shin B, Cagnon J, Long RD, Hurley PK, Stemmer S, McIntyre PC. Unpinned Interface between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In 0.53Ga0.47As (001) Electrochemical and Solid-State Letters. 12: G40-G43. DOI: 10.1149/1.3139603  0.382
2009 Jalan B, Cagnon J, Mates TE, Stemmer S. Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 1365-1368. DOI: 10.1116/1.3253355  0.673
2009 Jalan B, Engel-Herbert R, Wright NJ, Stemmer S. Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 461-464. DOI: 10.1116/1.3106610  0.7
2009 Jalan B, Engel-Herbert R, Cagnon J, Stemmer S. Growth modes in metal-organic molecular beam epitaxy of TiO2 on r -plane sapphire Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 230-233. DOI: 10.1116/1.3065713  0.685
2009 Lebeau JM, D'Alfonso AJ, Findlay SD, Stemmer S, Allen LJ. Quantitative comparisons of contrast in experimental and simulated bright-field scanning transmission electron microscopy images Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.174106  0.587
2009 Son J, Stemmer S. Resistive switching and resonant tunneling in epitaxial perovskite tunnel barriers Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.035105  0.582
2009 Lebeau JM, Findlay SD, Wang X, Jacobson AJ, Allen LJ, Stemmer S. High-angle scattering of fast electrons from crystals containing heavy elements: Simulation and experiment Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.214110  0.584
2009 Kim EJ, Chagarov E, Cagnon J, Yuan Y, Kummel AC, Asbeck PM, Stemmer S, Saraswat KC, McIntyre PC. Atomically abrupt and unpinned Al2O3/In 0.53Ga0.47 As interfaces: Experiment and simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3266006  0.429
2009 Lebeau JM, Engel-Herbert R, Jalan B, Cagnon J, Moetakef P, Stemmer S, Stephenson GB. Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction Applied Physics Letters. 95. DOI: 10.1063/1.3243696  0.815
2009 Son J, Cagnon J, Stemmer S. Strain relaxation in epitaxial Pt films on (001) SrTiO3 Journal of Applied Physics. 106. DOI: 10.1063/1.3207795  0.61
2009 Engel-Herbert R, Hwang Y, Cagnon J, Stemmer S. Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53 Ga0.47 As by chemical beam deposition Applied Physics Letters. 95. DOI: 10.1063/1.3204465  0.649
2009 Jalan B, Moetakef P, Stemmer S. Molecular beam epitaxy of SrTiO3 with a growth window Applied Physics Letters. 95. DOI: 10.1063/1.3184767  0.798
2009 Hwang Y, Wistey MA, Cagnon J, Engel-Herbert R, Stemmer S. Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53 Ga0.47 As channels Applied Physics Letters. 94. DOI: 10.1063/1.3106618  0.602
2009 Son J, Cagnon J, Stemmer S. Electrical properties of epitaxial SrTiO3 tunnel barriers on (001) Pt/ SrTiO3 substrates Applied Physics Letters. 94. DOI: 10.1063/1.3081110  0.625
2009 LeBeau JM, Findlay SD, Allen LJ, Stemmer S. Position averaged convergent beam electron diffraction Microscopy and Microanalysis. 15: 494-495. DOI: 10.1017/S1431927609096743  0.568
2009 Lebeau JM, Findlay SD, Wang X, Jacobson AJ, Allen LJ, Stemmer S. Quantitative HAADF Imaging of Crystals Containing Heavy Elements: A Comparison with Theory Microscopy and Microanalysis. 15: 466-467. DOI: 10.1017/S143192760909521X  0.512
2009 Engel-Herbert R, Jalan B, Cagnon J, Stemmer S. Microstructure of epitaxial rutile TiO2 films grown by molecular beam epitaxy on r-plane Al2O3 Journal of Crystal Growth. 312: 149-153. DOI: 10.1016/J.Jcrysgro.2009.10.005  0.691
2009 Choi D, Harris JS, Kim E, McIntyre PC, Cagnon J, Stemmer S. High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication Journal of Crystal Growth. 311: 1962-1971. DOI: 10.1016/J.Jcrysgro.2008.09.138  0.431
2009 Stemmer S, LeBeau JM, Cagnon J, Hwang Y, Engel-Herbert R. Applications of advanced transmission electron microscopy techniques in gate stack scaling Digest of Technical Papers - Symposium On Vlsi Technology. 198-199.  0.589
2008 Lebeau JM, Stemmer S. Experimental quantification of annular dark-field images in scanning transmission electron microscopy. Ultramicroscopy. 108: 1653-8. PMID 18707809 DOI: 10.1016/J.Ultramic.2008.07.001  0.569
2008 LeBeau JM, Findlay SD, Allen LJ, Stemmer S. Quantitative atomic resolution scanning transmission electron microscopy. Physical Review Letters. 100: 206101. PMID 18518557 DOI: 10.1103/Physrevlett.100.206101  0.565
2008 Findlay SD, Klenov DO, Stemmer S, Allen LJ. Atomic number contrast in high angle annular dark field imaging of crystals Materials Science and Technology. 24: 660-666. DOI: 10.1179/174328408X257315  0.344
2008 Stemmer S, Agustin MP, Klenov DO. Scanning transmission electron microscopy studies of interface stability and point defects in gate stacks with high-k dielectrics Ecs Transactions. 16: 177-183. DOI: 10.1149/1.2981600  0.809
2008 Delabie A, Brunco DP, Conard T, Favia P, Bender H, Franquet A, Sioncke S, Vandervorst W, Van Elshocht S, Heyns M, Meuris M, Kim E, McIntyre PC, Saraswat KC, Lebeau JM, ... ... Stemmer S, et al. Atomic layer deposition of hafnium oxide on ge and gaas substrates: Precursors and surface preparation Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2979144  0.62
2008 Boesch DS, Son J, LeBeau JM, Cagnon J, Stemmer S. Thickness dependence of the dielectric properties of epitaxial SrTiO 3 films on (001)Pt/SrTiO3 Applied Physics Express. 1: 0916021-0916023. DOI: 10.1143/Apex.1.091602  0.736
2008 Son J, Cagnon J, Boesch DS, Stemmer S. Epitaxial SrTiO3 tunnel barriers on Pt/MgO substrates Applied Physics Express. 1: 06160310616033. DOI: 10.1143/Apex.1.061603  0.609
2008 Son J, Stemmer S. Thermal leakage characteristics of PtSrTi O3 Pt structures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 555-557. DOI: 10.1116/1.2907782  0.644
2008 Son J, Cagnon J, Finstrom NH, Boesch DS, Lu JW, Stemmer S. Relationship between defects and the dielectric and transport properties of SrTiO3 thin films Ieee International Symposium On Applications of Ferroelectrics. 1. DOI: 10.1109/ISAF.2008.4693915  0.31
2008 Stemmer S, LeBeau JM, Findlay SD, Allen LJ. Image contrast in atomic resolution high-angle annular dark-field images Acta Crystallographica Section A. 64: 65-65. DOI: 10.1107/S0108767308097924  0.538
2008 LeBeau JM, Hu QO, Palmstrøm CJ, Stemmer S. Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces Applied Physics Letters. 93. DOI: 10.1063/1.2990622  0.624
2008 Jalan B, Engel-Herbert R, Mates TE, Stemmer S. Effects of hydrogen anneals on oxygen deficient SrTiO3-x single crystals Applied Physics Letters. 93. DOI: 10.1063/1.2969037  0.639
2008 LeBeau JM, Jur JS, Lichtenwalner DJ, Craft HS, Maria JP, Kingon AI, Klenov DO, Cagnon J, Stemmer S. High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control Applied Physics Letters. 92. DOI: 10.1063/1.2901036  0.62
2008 LeBeau JM, Jur JS, Lichtenwalner DJ, Kingon AI, Klenov DO, Stemmer S. Thermal stability of Hf-based gate dielectric stacks with rare-earth oxide capping layers Microscopy and Microanalysis. 14: 418-419. DOI: 10.1017/S1431927608084109  0.571
2008 LeBeau JM, Findlay SD, Allen LJ, Stemmer S. Quantitative HAADF-STEM and EELS Microscopy and Microanalysis. 14: 1352-1353. DOI: 10.1017/S1431927608082263  0.517
2008 Allen LJ, D'Alfonso AJ, Bosman M, Findlay SD, Oxley MP, Keast VJ, LeBeau JM, Stemmer S. Simulation of atomic resolution images in STEM Microscopy and Microanalysis. 14: 922-923. DOI: 10.1017/S1431927608082019  0.529
2008 Choi D, Ge Y, Harris JS, Cagnon J, Stemmer S. Low surface roughness and threading dislocation density Ge growth on Si (0 0 1) Journal of Crystal Growth. 310: 4273-4279. DOI: 10.1016/J.Jcrysgro.2008.07.029  0.389
2007 Klenov DO, Findlay SD, Allen LJ, Stemmer S. Influence of orientation on the contrast of high-angle annular dark-field images of silicon Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.014111  0.326
2007 Cagnon J, Boesch DS, Finstrom NH, Nergiz SZ, Keane SP, Stemmer S. Microstructure and dielectric properties of pyrochlore Bi2 Ti2 O7 thin films Journal of Applied Physics. 102. DOI: 10.1063/1.2769777  0.398
2007 Klenov DO, Zide JMO, Lebeau JM, Gossard AC, Stemmer S. Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers Applied Physics Letters. 90. DOI: 10.1063/1.2715174  0.564
2007 Finstrom NH, Cagnon J, Stemmer S. Properties of dielectric dead layers for SrTi O3 thin films on Pt electrodes Journal of Applied Physics. 101. DOI: 10.1063/1.2433745  0.435
2007 Klenov D, LeBeau J, Zide J, Gossard A, Stemmer S. Combination of TEM and STEM to Investigate the Self-Assembly of Epitaxial Nanocomposites Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607077252  0.519
2007 Voyles P, Yang J, Zuo J, Stemmer S. The Electron Microscopy Database: A Resource for Teaching and Learning Quantitative Methods in Electron Microscopy and Spectroscopy Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607074156  0.308
2006 Klenov DO, Stemmer S. Contributions to the contrast in experimental high-angle annular dark-field images. Ultramicroscopy. 106: 889-901. PMID 16713091 DOI: 10.1016/J.Ultramic.2006.03.007  0.346
2006 Klenov DO, Stemmer S. Limitations in through-focus depth sectioning in non-aberration corrected high-angle annular dark-field imaging Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L602  0.302
2006 Dora Y, Han S, Klenov D, Hansen PJ, No KS, Mishra UK, Stemmer S, Speck JS. ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 575-581. DOI: 10.1116/1.2167991  0.458
2006 Park J, Lu JW, Boesch DS, Stemmer S, York RA. Distributed phase shifter with pyrochlore bismuth zinc niobate thin films Ieee Microwave and Wireless Components Letters. 16: 264-266. DOI: 10.1109/Lmwc.2006.873528  0.361
2006 Pervez NK, Park J, Lu J, Stemmer S, York RA. Geometrical scaling effects in high permittivity capacitors Integrated Ferroelectrics. 80: 437-442. DOI: 10.1080/10584580600663235  0.305
2006 Pervez NK, Park J, Lu J, Stemmer S, York RA. High frequency loss modeling using dielectric relaxation Integrated Ferroelectrics. 77: 87-92. DOI: 10.1080/10584580500414184  0.367
2006 Park J, Lu J, Stemmer S, York RA. BZN thin film capacitors for microwave low loss tunable applications Integrated Ferroelectrics. 77: 21-26. DOI: 10.1080/10584580500413665  0.359
2006 Finstrom NH, Gannon JA, Pervez NK, York RA, Stemmer S. Dielectric losses of SrTiO 3 thin film capacitors with Pt bottom electrodes at frequencies up to 1 GHz Applied Physics Letters. 89. DOI: 10.1063/1.2405381  0.347
2006 Klenov DO, Mates TE, Stemmer S. Detection and mobility of hafnium in SiO 2 Applied Physics Letters. 89. DOI: 10.1063/1.2240743  0.395
2006 Agustin MP, Alshareef H, Quevedo-Lopez MA, Stemmer S. Influence of AIN layers on the interface stability of HfO 2 gate dielectric stacks Applied Physics Letters. 89. DOI: 10.1063/1.2236264  0.797
2006 Edge LF, Schlom DG, Rivillon S, Chabal YJ, Agustin MP, Stemmer S, Lee T, Kim MJ, Craft HS, Maria JP, Hawley ME, Holländer B, Schubert J, Eisenbeiser K. Thermal stability of amorphous LaScO 3 films on silicon Applied Physics Letters. 89. DOI: 10.1063/1.2222302  0.818
2006 Agustin MP, Bersuker G, Foran B, Boatner LA, Stemmer S. Scanning transmission electron microscopy investigations of interfacial layers in HfO 2 gate stacks Journal of Applied Physics. 100. DOI: 10.1063/1.2214187  0.818
2006 Schmidt S, Klenov DO, Keane SP, Lu J, Mates TE, Stemmer S. Atomic structure of (111) SrTiO 3/Pt interfaces Applied Physics Letters. 88. DOI: 10.1063/1.2191410  0.388
2006 Lu J, Schmidt S, Boesch DS, Pervez N, York RA, Stemmer S. Low-loss tunable capacitors fabricated directly on gold bottom electrodes Applied Physics Letters. 88. DOI: 10.1063/1.2186077  0.336
2006 Keane SP, Schmidt S, Lu J, Romanov AE, Stemmer S. Phase transitions in textured SrTiO 3 thin films on epitaxial Pt electrodes Journal of Applied Physics. 99. DOI: 10.1063/1.2171786  0.402
2006 Klenov DO, Stemmer S. Thickness effects in high-angle annular dark-field imaging of interfaces Microscopy and Microanalysis. 12: 1360-1361. DOI: 10.1017/S143192760606288X  0.315
2006 McCarthy I, Agustin MP, Shamuilia S, Stemmer S, Afanas'ev VV, Campbell SA. Strontium hafnate films deposited by physical vapor deposition Thin Solid Films. 515: 2527-2530. DOI: 10.1016/J.Tsf.2006.07.030  0.821
2006 Edge LF, Schlom DG, Stemmer S, Lucovsky G, Luning J. Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides Radiation Physics and Chemistry. 75: 1608-1612. DOI: 10.1016/J.Radphyschem.2006.05.005  0.305
2005 Schmidt S, Ok YW, Klenov DO, Lu J, Keane SP, Stemmer S. Microstructure of epitaxial SrTiO3/Pt/Ti/sapphire heterostructures Journal of Materials Research. 20: 2261-2265. DOI: 10.1557/Jmr.2005.0282  0.424
2005 Klenov DO, Schlom DG, Li H, Stemmer S. The interface between single crystalline (001) LaAlO3 and (001) silicon Japanese Journal of Applied Physics, Part 2: Letters. 44. DOI: 10.1143/Jjap.44.L617  0.409
2005 Schmidt S, Lu J, Keane SP, Bregante LD, Klenov DO, Stemmer S. Microstructure and dielectric properties of textured SrTiO 3 thin films Journal of the American Ceramic Society. 88: 789-801. DOI: 10.1111/J.1551-2916.2005.00195.X  0.432
2005 Agustin MP, Fonseca LRC, Hooker JC, Stemmer S. Scanning transmission electron microscopy of gate stacks with HfO 2 dielectrics and TiN electrodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2053362  0.821
2005 Zide JM, Klenov DO, Stemmer S, Gossard AC, Zeng G, Bowers JE, Vashaee D, Shakouri A. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles Applied Physics Letters. 87. DOI: 10.1063/1.2043241  0.321
2005 Li M, Zhang Z, Campbell SA, Gladfelter WL, Agustin MP, Klenov DO, Stemmer S. Electrical and material characterizations of high-permittivity Hf x Ti 1-x O 2 gate insulators Journal of Applied Physics. 98. DOI: 10.1063/1.2039268  0.827
2005 Lu J, Schmidt S, Ok YW, Keane SP, Stemmer S. Contributions to the dielectric losses of textured SrTi O 3 thin films with Pt electrodes Journal of Applied Physics. 98. DOI: 10.1063/1.2034649  0.395
2005 Lichtenwalner DJ, Jur JS, Kingon AI, Agustin MP, Yang Y, Stemmer S, Goncharova LV, Gustafsson T, Garfunkel E. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction Journal of Applied Physics. 98. DOI: 10.1063/1.1988967  0.814
2005 Klenov DO, Zide JM, Zimmerman JD, Gossard AC, Stemmer S. Interface atomic structure of epitaxial ErAs layers on (001)In 0.53Ga 0.47As and GaAs Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1947910  0.388
2005 Klenov DO, Driscoll DC, Gossard AC, Stemmer S. Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial in 0.53Ga 0.47as layers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1885172  0.356
2005 Park J, Lu J, Stemmer S, York RA. Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films Journal of Applied Physics. 97. DOI: 10.1063/1.1883306  0.344
2005 Klenov DO, Edge LF, Schlom DG, Stemmer S. Extended defects in epitaxial Sc2 O3 films grown on (111) Si Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1857068  0.43
2005 Tagantsev AK, Lu J, Stemmer S. Temperature dependence of the dielectric tunability of pyrochlore bismuth zinc niobate thin films Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1853533  0.371
2005 Biswas N, Gurganus J, Misra V, Yang Y, Stemmer S. Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application Applied Physics Letters. 86. DOI: 10.1063/1.1849850  0.391
2005 Klenov DO, Lu J, Schmidt S, Stemmer S. Characterization of Bi1.5ZnNb1.5O7-x Pyrochlore Thin Films by High-angle Annular Dark-field Imaging in STEM Microscopy and Microanalysis. 11: 1732-1733. DOI: 10.1017/S1431927605506469  0.349
2005 Agustin MP, Fonseca LRC, Hooker JH, Stemmer S. HAADF Imaging and Low-Loss EELS Investigation of HfO2/TiN Interfaces in High-k Gate Stacks Microscopy and Microanalysis. 11: 1446-1447. DOI: 10.1017/S1431927605504458  0.783
2005 Foran B, Barnett J, Lysaght PS, Agustin MP, Stemmer S. Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy Journal of Electron Spectroscopy and Related Phenomena. 143: 149-158. DOI: 10.1016/J.Elspec.2004.03.013  0.826
2004 Diebold AC, Foran B, Kisielowski C, Muller DA, Pennycook SJ, Principe E, Stemmer S. Thin dielectric film thickness determination by advanced transmission electron microscopy. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 9: 493-508. PMID 14750984 DOI: 10.1017/S1431927603030629  0.41
2004 Pervez NK, Lu J, Stemmer S, York RA. AC Loss Modeling in Ba 0.5 Sr 0.5 TiO 3 Using Dielectric Relaxation Mrs Proceedings. 833. DOI: 10.1557/Proc-833-G1.10  0.319
2004 Klenov DO, Taylor TR, Stemmer S. SrTiO3 films on platinized (0001) Al2O3: Characterization of texture and nonstoichiometry accommodation Journal of Materials Research. 19: 1477-1486. DOI: 10.1557/Jmr.2004.0197  0.421
2004 Stemmer S. Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 791-800. DOI: 10.1116/1.1688357  0.333
2004 Kim H, McIntyre PC, Chui CO, Saraswat KC, Stemmer S. Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer Journal of Applied Physics. 96: 3467-3472. DOI: 10.1063/1.1776636  0.399
2004 Edge LF, Schlom DG, Brewer RT, Chabal YJ, Williams JR, Chambers SA, Hinkle C, Lucovsky G, Yang Y, Stemmer S, Copel M, Holländer B, Schubert J. Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon Applied Physics Letters. 84: 4629-4631. DOI: 10.1063/1.1759065  0.464
2004 Yang Y, Zhu W, Ma TP, Stemmer S. High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics Journal of Applied Physics. 95: 3772-3776. DOI: 10.1063/1.1652240  0.444
2004 Lu J, Klenov DO, Stemmer S. Influence of strain on the dielectric relaxation of pyrochlore bismuth zinc niobate thin films Applied Physics Letters. 84: 957-959. DOI: 10.1063/1.1646216  0.317
2004 Agustin MP, Foran B, Bersuker G, Barnett J, Stemmer S. Characterization of ultra-thin Hf-based alternative dielectric layers for Si CMOS by Z-contrast imaging and electron energy-loss spectroscopy in STEM Microscopy and Microanalysis. 10: 322-323. DOI: 10.1017/S1431927604886525  0.8
2004 Stemmer S, Agustin MP, Yang Y, Schmidt S, Foran B, Bersuker G, Schlom DG. Advanced characterization of novel gate stacks for Si CMOS by scanning transmission electron microscopy Microscopy and Microanalysis. 10: 290-291. DOI: 10.1017/S1431927604886343  0.796
2004 Ushakov SV, Navrotsky A, Yang Y, Stemmer S, Kukli K, Ritala M, Leskelä MA, Fejes P, Demkov A, Wang C, Nguyen B, Triyoso D, Tobin P. Crystallization in hafnia- and zirconia-based systems Physica Status Solidi (B). 241: 2268-2278. DOI: 10.1002/Pssb.200404935  0.34
2004 Chen Z, Misra V, Haggerty RP, Stemmer S. Stability of Ru- And Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS Physica Status Solidi (B) Basic Research. 241: 2253-2267. DOI: 10.1002/Pssb.200404933  0.333
2003 Stemmer S, Chen ZQ, Zhu WJ, Ma TP. Electron energy-loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics. Journal of Microscopy. 210: 74-9. PMID 12694419 DOI: 10.1046/J.1365-2818.2003.01175.X  0.487
2003 Klenov DO, Donner W, Chen L, Jacobson AJ, Stemmer S. Composition control of radio-frequency magnetron sputter-deposited La0.5Sr0.5CoO3−∂ thin films Journal of Materials Research. 18: 188-194. DOI: 10.1557/Jmr.2003.0026  0.412
2003 Ramanathan S, McIntyre PC, Luning J, Lysaght PS, Yang Y, Chen Z, Stemmer S. Phase Separation in Hafnium Silicates for Alternative Gate Dielectrics Journal of the Electrochemical Society. 150: F173. DOI: 10.1149/1.1604115  0.39
2003 Niu D, Ashcraft RW, Chen Z, Stemmer S, Parsons GN. Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon Journal of the Electrochemical Society. 150: F102-F109. DOI: 10.1149/1.1566415  0.442
2003 Stemmer S, Chen Z, Levi CG, Lysaght PS, Foran B, Gisby JA, Taylor JR. Application of Metastable Phase Diagrams to Silicate Thin Films for Alternative Gate Dielectrics Japanese Journal of Applied Physics. 42: 3593-3597. DOI: 10.1143/Jjap.42.3593  0.34
2003 Lu J, Chen Z, Taylor TR, Stemmer S. Composition control and dielectric properties of bismuth zinc niobate thin films synthesized by radio-frequency magnetron sputtering Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 1745-1751. DOI: 10.1116/1.1603280  0.415
2003 Risbud AS, Spaldin NA, Chen ZQ, Stemmer S, Seshadri R. Magnetism in polycrystalline cobalt-substituted zinc oxide Physical Review B. 68. DOI: 10.1103/Physrevb.68.205202  0.318
2003 Stemmer S, Li Y, Foran B, Lysaght PS, Streiffer SK, Fuoss P, Seifert S. Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films Applied Physics Letters. 83: 3141-3143. DOI: 10.1063/1.1617369  0.408
2003 Lu J, Stemmer S. Low-loss, tunable bismuth zinc niobate films deposited by rf magnetron sputtering Applied Physics Letters. 83: 2411-2413. DOI: 10.1063/1.1613036  0.398
2003 Klenov DO, Donner W, Foran B, Stemmer S. Impact of stress on oxygen vacancy ordering in epitaxial (La0.5Sr0.5)CoO3-∂ thin films Applied Physics Letters. 82: 3427-3429. DOI: 10.1063/1.1575503  0.361
2003 Lysaght P, Foran B, Stemmer S, Bersuker G, Bennett J, Tichy R, Larson L, Huff HR. Thermal response of MOCVD hafnium silicate Microelectronic Engineering. 69: 182-189. DOI: 10.1016/S0167-9317(03)00295-8  0.446
2002 Stemmer S. Atomic scale structure-property relationships of defects and interfaces in novel oxide thin films Proceedings of Spie - the International Society For Optical Engineering. 4811: 244-251. DOI: 10.1117/12.455838  0.316
2002 Stemmer S, Chen Z, Keding R, Maria J, Wicaksana D, Kingon AI. Erratum: “Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures” [J. Appl. Phys. 92, 82 (2002)] Journal of Applied Physics. 92: 6942-6942. DOI: 10.1063/1.1519098  0.336
2002 Stemmer S, Klenov DO, Chen Z, Niu D, Ashcraft RW, Parsons GN. Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers Applied Physics Letters. 81: 712-714. DOI: 10.1063/1.1496500  0.433
2002 Niu D, Ashcraft RW, Chen Z, Stemmer S, Parsons GN. Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon Applied Physics Letters. 81: 676-678. DOI: 10.1063/1.1496138  0.461
2002 Stemmer S, Chen Z, Keding R, Maria JP, Wicaksana D, Kingon AI. Stability of ZrO 2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures Journal of Applied Physics. 92: 82-86. DOI: 10.1063/1.1481970  0.411
2002 Stemmer S, Klenov D, Chen Z, Maria JP, Kingon AI, Niu D, Parsons GN. Electron energy-loss spectroscopy of alternative gate dielectric stacks Microscopy and Microanalysis. 8: 66-67. DOI: 10.1017/S1431927602101826  0.343
2001 Klie RF, Ito Y, Stemmer S, Browning ND. Observation of oxygen vacancy ordering and segregation in Perovskite oxides Ultramicroscopy. 86: 289-302. PMID 11281149 DOI: 10.1016/S0304-3991(00)00120-0  0.334
2001 Baumann PK, Streiffer SK, Bai GR, Ghosh K, Auciello O, Thompson C, Stemmer S, Rao RA, Eom C, Xu F, Trolier-mckinstry S, Kim D, Maria J, Kingon AI. Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD Integrated Ferroelectrics. 35: 151-158. DOI: 10.1080/10584580108016896  0.396
2001 Stemmer S, Höche T, Keding R, Rüssel C, Schneider R, Browning ND, Streiffer SK, Kleebe H-. Oxidation states of titanium in bulk barium titanates and in (100) fiber-textured (BaxSr1−x)Ti1+yO3+z thin films Applied Physics Letters. 79: 3149-3151. DOI: 10.1063/1.1418036  0.416
2001 Stemmer S, Jacobson AJ, Chen X, Ignatiev A. Oxygen vacancy ordering in epitaxial La0.5Sr0.5CoO3 - ∂ thin films on (001) LaAlO3 Journal of Applied Physics. 90: 3319-3324. DOI: 10.1063/1.1401793  0.425
2001 Stemmer S, Maria JP, Kingon AI. Structure and stability of La2O3/SiO2 layers on Si(001) Applied Physics Letters. 79: 102-104. DOI: 10.1063/1.1383268  0.396
2000 Stemmer S, Bai GR, Browning ND, Streiffer SK. Microstructure of epitaxial Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films grown by metalorganic chemical vapor deposition Journal of Applied Physics. 87: 3526-3531. DOI: 10.1063/1.372376  0.408
2000 Bai GR, Streiffer SK, Baumann PK, Auciello O, Ghosh K, Stemmer S, Munkholm A, Thompson C, Rao RA, Eom CB. Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition Applied Physics Letters. 76: 3106-3108. DOI: 10.1063/1.126538  0.411
2000 Stemmer S, Streiffer SK, Browning ND, Basceri C, Kingon AI. Grain Boundaries in Barium Strontium Titanate Thin Films: Structure, Chemistry and Influence on Electronic Properties Interface Science. 8: 209-221. DOI: 10.1023/A:1008794520909  0.401
2000 Stemmer S, Sane A, Browning ND, Mazanec TJ. Characterization of oxygen-deficient SrCoO3-δ by electron energy-loss spectroscopy and Z-contrast imaging Solid State Ionics. 130: 71-80. DOI: 10.1016/S0167-2738(99)00309-4  0.345
2000 Stemmer S, Bai GR, Browning ND, Streiffer SK. Microstructure of epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by metalorganic chemical vapor deposition Journal of Applied Physics. 87: 3526-3531.  0.305
1999 Baumann PK, Bai GR, Streiffer SK, Auciello O, Ghosh K, Stemmer S, Munkholm A, Thompson C, Kim D-, Maria J-, Kingon AI. Ferroelectric and Piezoelectric Properties of MOCVD Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 Epitaxial Thin Films Mrs Proceedings. 596. DOI: 10.1557/Proc-596-517  0.398
1999 Browning ND, Kingon AI, Stemmer S, Streiffer SK. Microstructure and nonstoichiometry of barium strontium titanate thin films for dram applications. Mrs Proceedings. 574. DOI: 10.1557/Proc-574-119  0.404
1999 Stemmer S, Streiffer SK, Browning ND, Kingon AI. Accommodation Of Nonstoichiometry In (100) Fiber-Textured (Baxsr1-X)Ti1+Yo3+Z Thin Films Grown By Chemical Vapor Deposition Applied Physics Letters. 74: 2432-2434. DOI: 10.1063/1.123871  0.391
1999 Zaborac JA, Buban JP, Moltaji HO, Stemmer S, Browning ND. Cation Coordination At Σ Grain Boundaries in TiO2 and SrTiO3, and its Effect on the Local Electronic Properties Microscopy and Microanalysis. 5: 792-793. DOI: 10.1017/S1431927600017281  0.306
1998 James EM, Browning ND, Nicholls AW, Kawasaki M, Xin Y, Stemmer S. Demonstration of atomic resolution Z-contrast imaging by a JEOL JEM-2010F scanning transmission electron microscope Journal of Electron Microscopy. 47: 561-574. DOI: 10.1093/Oxfordjournals.Jmicro.A023629  0.309
1998 James EM, Browning ND, Nicholls AW, Kawasaki M, Stemmer S, Xin Y, Duscher G. Compositional Imaging At The Sub- 2 Å Level Using A 200 Kv Schottky Field Emission Transmission Electron Microscope Microscopy and Microanalysis. 4: 138-139. DOI: 10.1017/S143192760002081X  0.311
1998 Stemmer S, Roebben G, Van Der Biest O. Evolution of grain boundary films in liquid phase intered silicon nitride during high-temperature testing Acta Materialia. 46: 5599-5606. DOI: 10.1016/S1359-6454(98)00183-9  0.424
1998 Roebben G, Donzel L, Stemmer S, Steen M, Schaller R, Biest OVd. Viscous Energy Dissipation At High Temperatures In Silicon Nitride Acta Materialia. 46: 4711-4723. DOI: 10.1016/S1359-6454(98)00131-1  0.357
1998 Stemmer S, Vleugels J, Van Der Biest O. Grain boundary segregation in high-purity, yttria-stabilized tetragonal zirconia polycrystals (Y-TZP) Journal of the European Ceramic Society. 18: 1565-1570. DOI: 10.1016/S0955-2219(98)00078-8  0.322
1997 Stemmer S, Duscher G, Scheu C, Heuer AH, Rühle M. The reaction between a TiNi shape memory thin film and silicon Journal of Materials Research. 12: 1734-1740. DOI: 10.1557/Jmr.1997.0239  0.381
1996 Stemmer S, Pirouz P, Ikuhara Y, Davis RF. Film/Substrate Orientation Relationship in the AlN/6H-SiC Epitaxial System. Physical Review Letters. 77: 1797-1800. PMID 10063174 DOI: 10.1103/Physrevlett.77.1797  0.405
1996 Ernst F, Hofmann D, Nadarzinski K, Schmidt C, Stemmer S, Streiffer SK. Quantitative high-resolution electron microscopy of interfaces Materials Science Forum. 207: 23-34. DOI: 10.4028/Www.Scientific.Net/Msf.207-209.23  0.304
1996 Kahn H, Stemmer S, Mullen RL, Huff MA, Heuer AH. Polycrystalline silicon films for microelectromechanical devices Materials Research Society Symposium - Proceedings. 403: 321-326. DOI: 10.1557/Proc-403-321  0.389
1996 Chien FR, Ning XJ, Stemmer S, Pirouz P, Bremser MD, Davis RF. Growth defects in GaN films on 6H-SiC substrates Applied Physics Letters. 68: 2678-2680. DOI: 10.1063/1.116279  0.419
1995 Stemmer S, Streiffer SK, Hsu WY, Ernst F, Rai R, Rüle M. The influence of Pt and SrTiO3 interlayers on the microstructure of PbTiO3 thin films deposited by laser ablation on (001) MgO Journal of Materials Research. 10: 791-794. DOI: 10.1557/Jmr.1995.0791  0.407
1995 Stemmer S, Streiffer SK, Ernst F, Rüuhle M. Atomistic structure of 90° domain walls in ferroelectric PbTiO3 thin films Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 71: 713-724. DOI: 10.1080/01418619508244477  0.333
1995 Stemmer S, Streiffer SK, Ernst F, Rühle M, Hsu WY, Raj R. Domain configurations in ferroelectric PbTiO3 thin films: The influence of substrate and film thickness Solid State Ionics. 75: 43-48. DOI: 10.1016/0167-2738(94)00151-H  0.428
1995 Stemmer S, Streiffer SK, Ernst F, Rühle M. Dislocations in PbTiO3 thin films Physica Status Solidi (a). 147: 135-154. DOI: 10.1002/Pssa.2211470115  0.421
1995 Stemmer S, Streiffer SK, Ernst F, Ruehle M. Dislocations in PbTiO3 thin films Physica Status Solidi (a) Applied Research. 147: 135-154.  0.313
1994 Bruley J, Stemmer S, Ernst F, Rühle M, Hsu WY, Raj R. Nanostructure and chemistry of a (100)MgO/(100)GaAs interface Applied Physics Letters. 65: 564-566. DOI: 10.1063/1.112296  0.458
Show low-probability matches.