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Melody P. Agustin, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Stemmer S, Agustin MP, Klenov DO. Scanning transmission electron microscopy studies of interface stability and point defects in gate stacks with high-k dielectrics Ecs Transactions. 16: 177-183. DOI: 10.1149/1.2981600  0.587
2006 Agustin MP, Alshareef H, Quevedo-Lopez MA, Stemmer S. Influence of AIN layers on the interface stability of HfO 2 gate dielectric stacks Applied Physics Letters. 89. DOI: 10.1063/1.2236264  0.603
2006 Edge LF, Schlom DG, Rivillon S, Chabal YJ, Agustin MP, Stemmer S, Lee T, Kim MJ, Craft HS, Maria JP, Hawley ME, Holländer B, Schubert J, Eisenbeiser K. Thermal stability of amorphous LaScO 3 films on silicon Applied Physics Letters. 89. DOI: 10.1063/1.2222302  0.599
2006 Agustin MP, Bersuker G, Foran B, Boatner LA, Stemmer S. Scanning transmission electron microscopy investigations of interfacial layers in HfO 2 gate stacks Journal of Applied Physics. 100. DOI: 10.1063/1.2214187  0.666
2006 McCarthy I, Agustin MP, Shamuilia S, Stemmer S, Afanas'ev VV, Campbell SA. Strontium hafnate films deposited by physical vapor deposition Thin Solid Films. 515: 2527-2530. DOI: 10.1016/J.Tsf.2006.07.030  0.563
2005 Agustin MP, Fonseca LRC, Hooker JC, Stemmer S. Scanning transmission electron microscopy of gate stacks with HfO 2 dielectrics and TiN electrodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2053362  0.65
2005 Li M, Zhang Z, Campbell SA, Gladfelter WL, Agustin MP, Klenov DO, Stemmer S. Electrical and material characterizations of high-permittivity Hf x Ti 1-x O 2 gate insulators Journal of Applied Physics. 98. DOI: 10.1063/1.2039268  0.593
2005 Lichtenwalner DJ, Jur JS, Kingon AI, Agustin MP, Yang Y, Stemmer S, Goncharova LV, Gustafsson T, Garfunkel E. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction Journal of Applied Physics. 98. DOI: 10.1063/1.1988967  0.623
2005 Agustin MP, Fonseca LRC, Hooker JH, Stemmer S. HAADF Imaging and Low-Loss EELS Investigation of HfO2/TiN Interfaces in High-k Gate Stacks Microscopy and Microanalysis. 11: 1446-1447. DOI: 10.1017/S1431927605504458  0.52
2005 Foran B, Barnett J, Lysaght PS, Agustin MP, Stemmer S. Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy Journal of Electron Spectroscopy and Related Phenomena. 143: 149-158. DOI: 10.1016/J.Elspec.2004.03.013  0.666
2004 Agustin MP, Foran B, Bersuker G, Barnett J, Stemmer S. Characterization of ultra-thin Hf-based alternative dielectric layers for Si CMOS by Z-contrast imaging and electron energy-loss spectroscopy in STEM Microscopy and Microanalysis. 10: 322-323. DOI: 10.1017/S1431927604886525  0.618
2004 Stemmer S, Agustin MP, Yang Y, Schmidt S, Foran B, Bersuker G, Schlom DG. Advanced characterization of novel gate stacks for Si CMOS by scanning transmission electron microscopy Microscopy and Microanalysis. 10: 290-291. DOI: 10.1017/S1431927604886343  0.577
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