Year |
Citation |
Score |
2014 |
Gupta P, Narayan J. Integration and structural analysis of strain relaxed bi-epitaxial zinc oxide(0001) thin film with silicon(100) using titanium nitride buffer layer Journal of Applied Physics. 115. DOI: 10.1063/1.4861638 |
0.678 |
|
2012 |
Gupta P, Dutta T, Mal S, Narayan J. Controlledp-type ton-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation Journal of Applied Physics. 111: 013706. DOI: 10.1063/1.3671412 |
0.723 |
|
2012 |
Bayati MR, Gupta P, Molaei R, Narayan RJ, Narayan J. Phase tuning, thin film epitaxy, interfacial modeling, and properties of YSZ-buffered TiO 2 on Si(001) substrate Crystal Growth and Design. 12: 4535-4544. DOI: 10.1021/Cg3007124 |
0.768 |
|
2012 |
Mal S, Yang T, Gupta P, Prater J, Narayan J. Corrigendum to: Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(0 0 1) substrates [Acta Materialia 59 (2011) 2526–2534] Acta Materialia. 60: 457. DOI: 10.1016/J.Actamat.2011.08.010 |
0.715 |
|
2010 |
Dutta T, Gupta P, Gupta A, Narayan J. High work function (p-type NiO1+x)/Zn0.95Ga0.05O heterostructures for transparent conducting oxides Journal of Physics D: Applied Physics. 43: 105301. DOI: 10.1088/0022-3727/43/10/105301 |
0.73 |
|
2010 |
Dutta T, Gupta P, Gupta A, Narayan J. Effect of Li doping in NiO thin films on its transparent and conducting properties and its application in heteroepitaxial p-n junctions Journal of Applied Physics. 108: 083715. DOI: 10.1063/1.3499276 |
0.76 |
|
2009 |
Gupta A, Aggarwal R, Gupta P, Dutta T, Narayan RJ, Narayan J. Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si (001) Applied Physics Letters. 95. DOI: 10.1063/1.3232241 |
0.73 |
|
2009 |
Dutta T, Gupta P, Bhosle V, Narayan J. MoOx modified ZnGaO based transparent conducting oxides Journal of Applied Physics. 105: 053704. DOI: 10.1063/1.3078812 |
0.72 |
|
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