☰

Junjun Li, Ph.D. - Publications

Affiliations: 
2004 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 Cilento T, Schenkel M, Yun C, Mishra R, Li J, Chatty KV, Gauthier R. Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology Microelectronics Reliability. 50: 1367-1372. DOI: 10.1016/J.Microrel.2010.07.132  0.353
2009 Alvarez D, Chatty KV, Russ C, Abou-Khalil MJ, Li J, Gauthier R, Esmark K, Halbach R, Seguin C. Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. Microelectronics Reliability. 49: 1417-1423. DOI: 10.1016/J.Microrel.2009.06.051  0.307
2006 Li J, Joshi S, Barnes R, Rosenbaum E. Compact modeling of on-chip ESD protection devices using Verilog-A Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 25: 1047-1063. DOI: 10.1109/Tcad.2005.855948  0.549
2006 Alvarez D, Abou-Khalil MJ, Russ C, Chatty KV, Gauthier R, Kontos D, Li J, Seguin C, Halbach R. Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant Microelectronics Reliability. 46: 1597-1602. DOI: 10.1016/J.Microrel.2006.07.041  0.304
2005 Li J, Li H, Barnes R, Rosenbaum E. Comprehensive study of drain breakdown in MOSFETs Ieee Transactions On Electron Devices. 52: 1180-1186. DOI: 10.1109/Ted.2005.848858  0.479
Show low-probability matches.