Rongjun Wang, Ph.D. - Publications
Affiliations: | 2002 | Rensselaer Polytechnic Institute, Troy, NY, United States |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2004 | Li C, Bhat IB, Wang R, Seiler J. Electro-chemical mechanical polishing of silicon carbide Journal of Electronic Materials. 33: 481-486. DOI: 10.1007/S11664-004-0207-6 | 0.427 | |||
2002 | Wang R, Bhat IB, Paul Chow T. Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors Journal of Applied Physics. 92: 7587-7592. DOI: 10.1063/1.1516257 | 0.434 | |||
2000 | Wang R, Bhat I, Chow P. A New Sublimation Etching for Reproducible Growth of Epitaxial Layers of SiC on SiC Substrate in a CVD Reactor Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H2.6 | 0.468 | |||
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