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Christian A. Zorman - Publications

Affiliations: 
Case Western Reserve University, Cleveland Heights, OH, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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163 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Islam MS, Singh SK, Lee J, Xie Y, Zorman CA, Feng PX-, Mandal S. A Programmable Sustaining Amplifier for Flexible Multimode MEMS-Referenced Oscillators Ieee Transactions On Circuits and Systems I-Regular Papers. 66: 1405-1418. DOI: 10.1109/Tcsi.2018.2880675  0.339
2019 Chen H, Jia H, Liao W, Pashaei V, Arutt CN, McCurdy MW, Zorman CA, Reed RA, Schrimpf RD, Alles ML, Feng PX-. Probing heavy ion radiation effects in silicon carbide (SiC) via 3D integrated multimode vibrating diaphragms Applied Physics Letters. 114: 101901. DOI: 10.1063/1.5063782  0.323
2018 Liu T, Premasiri K, Sui Y, Zhan X, Mustafa HAB, Akkus O, Zorman CA, Gao XPA, Sankaran RM. Direct, transfer-free growth of large-area hexagonal boron nitride films by plasma-enhanced chemical film conversion (PECFC) of printable, solution-processed ammonia borane. Acs Applied Materials & Interfaces. PMID 30462491 DOI: 10.1021/Acsami.8B17152  0.48
2018 Sui Y, Ghosh S, Miller C, Pappas D, Mohan Sankaran R, Zorman CA. Tunable resistivity in ink-jet printed electrical structures on paper by plasma conversion of particle-free, stabilizer-free silver inks Journal of Vacuum Science & Technology A. 36: 051302. DOI: 10.1116/1.5042459  0.313
2018 Zheng XQ, Lee J, Rafique S, Han L, Zorman CA, Zhao H, Feng PXL. Free-Standing β-Ga 2 O 3 Thin Diaphragms Journal of Electronic Materials. 47: 973-981. DOI: 10.1007/S11664-017-5978-7  0.369
2017 Zheng XQ, Lee J, Rafique S, Han L, Zorman CA, Zhao H, Feng PX. Ultra-Wide-Bandgap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion. Acs Applied Materials & Interfaces. PMID 29115818 DOI: 10.1021/Acsami.7B13930  0.345
2017 Rafique S, Han L, Lee J, Zheng XQ, Zorman CA, Feng PXL, Zhao H. Synthesis and characterization of Ga2O3 nanosheets on 3C-SiC-on-Si by low pressure chemical vapor deposition Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 11208. DOI: 10.1116/1.4974158  0.412
2017 Lee J, Zamani H, Rajgopal S, Zorman CA, Feng PXL. 3C-SiC microdisk mechanical resonators with multimode resonances at radio frequencies Journal of Micromechanics and Microengineering. 27: 74001. DOI: 10.1088/1361-6439/Aa6Ab7  0.332
2017 Ghosh S, Klek E, Zorman CA, Sankaran RM. Microplasma-Induced in Situ Formation of Patterned, Stretchable Electrical Conductors Acs Macro Letters. 6: 194-199. DOI: 10.1021/Acsmacrolett.6B00919  0.374
2017 Ghosh S, Boris DR, Hernández SC, Zorman CA, Walton SG, Sankaran RM. Correlating charge fluence with nanoparticle formation during in situ plasma synthesis of nanocomposite films Plasma Processes and Polymers. 14: 1700079. DOI: 10.1002/Ppap.201700079  0.317
2016 Rafique S, Han L, Zorman CA, Zhao H. Synthesis of Wide Bandgap β-Ga2O3 Rods on 3C-SiC-on-Si Crystal Growth and Design. 16: 511-517. DOI: 10.1021/Acs.Cgd.5B01562  0.368
2015 Yang R, Zorman CA, Feng PXL. High frequency torsional-mode nanomechanical resonators enabled by very thin nanocrystalline diamond diaphragms Diamond and Related Materials. 54: 19-25. DOI: 10.1016/J.Diamond.2014.11.015  0.384
2015 Ghosh S, Ostrowski E, Yang R, Debnath D, Feng PXL, Zorman CA, Sankaran RM. Atmospheric-Pressure Plasma Reduction of Metal Cation-Containing Polymer Films to Produce Electrically Conductive Nanocomposites by an Electrodiffusion Mechanism Plasma Chemistry and Plasma Processing. DOI: 10.1007/S11090-015-9665-2  0.426
2014 de Leon A, Barnes AC, Thomas P, O'Donnell J, Zorman CA, Advincula RC. Transfer printing of self-folding polymer-metal bilayer particles. Acs Applied Materials & Interfaces. 6: 22695-700. PMID 25412118 DOI: 10.1021/Am5068172  0.399
2014 Ghosh S, Yang R, Kaumeyer M, Zorman CA, Rowan SJ, Feng PX, Sankaran RM. Fabrication of electrically conductive metal patterns at the surface of polymer films by microplasma-based direct writing. Acs Applied Materials & Interfaces. 6: 3099-104. PMID 24556018 DOI: 10.1021/Am406005A  0.371
2014 Trevino J, Fu XA, Mehregany M, Zorman CA. Doped polycrystalline 3C-SiC films with low stress for MEMS: Part II. Characterization using micromachined structures Journal of Micromechanics and Microengineering. 24. DOI: 10.1088/0960-1317/24/6/065001  0.46
2014 Fu XA, Trevino J, Mehregany M, Zorman CA. Doped polycrystalline 3C-SiC films with low stress for MEMS: Part I. Deposition conditions and film properties Journal of Micromechanics and Microengineering. 24. DOI: 10.1088/0960-1317/24/3/035013  0.49
2014 Hess-Dunning AE, Smith RL, Zorman CA. Development of polynorbornene as a structural material for microfluidics and flexible biomems Journal of Applied Polymer Science. 131. DOI: 10.1002/App.40969  0.382
2013 Du J, Zorman CA. A polycrystalline SiC-on-Si architecture for capacitive pressure sensing applications beyond 400 °c: Process development and device performance Journal of Materials Research. 28: 120-128. DOI: 10.1557/Jmr.2012.260  0.67
2012 Zamani H, Lee SW, Avishai A, Zorman CA, Mohan Sankaran R, Feng PXL. Focused ion beam (FIB) nanomachining of silicon carbide (SiC) stencil masks for nanoscale patterning Materials Science Forum. 717: 889-892. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.889  0.45
2012 Zorman C, Eldridge A, Du J, Johnston M, Dubnisheva A, Manley S, Fissell W, Fleischman A, Roy S. Amorphous silicon carbide as a non-biofouling structural material for biomedical microdevices Materials Science Forum. 717: 537-540. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.537  0.487
2012 Barnes AC, Zorman CA, Feng PXL. Amorphous silicon carbide (a-SiC) thin square membranes for resonant micromechanical devices Materials Science Forum. 717: 533-536. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.533  0.355
2012 Zorman CA, Barnes AC, Feng PXL. Diaphragm-based microsystems using thin film silicon carbide Proceedings of Ieee Sensors. DOI: 10.1109/ICSENS.2012.6411566  0.341
2012 Zorman CA, Barnes AC. Silicon Carbide BioMEMS Silicon Carbide Biotechnology. 351-376. DOI: 10.1016/B978-0-12-385906-8.00010-6  0.384
2011 Hess AE, Zorman CA. Fabrication and characterization of MEMS-based structures from a bio-inspired, chemo-responsive polymer nanocomposite Materials Research Society Symposium Proceedings. 1299: 147-152. DOI: 10.1557/Opl.2011.56  0.313
2011 Fu XA, Dunning JL, Mehregany M, Zorman CA. Low stress polycrystalline SiC thin films suitable for MEMS applications Journal of the Electrochemical Society. 158: H675-H680. DOI: 10.1149/1.3575160  0.467
2011 Scardelletti MC, Karnick DA, Ponchak GE, Zorman CA. Conformal thin film packaging for SiC sensor circuits in harsh environments 2011 Ieee Radio and Wireless Week, Rww 2011 - 2011 Ieee Topical Conference On Wireless Sensors and Sensor Networks, Wisnet 2011. 53-56. DOI: 10.1109/WISNET.2011.5725031  0.386
2011 Hess AE, Sabens DM, Martin HB, Zorman CA. Diamond-on-polymer microelectrode arrays fabricated using a chemical release transfer process Journal of Microelectromechanical Systems. 20: 867-875. DOI: 10.1109/Jmems.2011.2159099  0.339
2011 Scardelletti MC, Ponchak GE, Jordan JL, Varaljay NC, McQuaid EA, Zorman CA. Temperature dependence of SiC thin film metal-insulator-metal (MIM) capacitors on alumina over a temperature range from 25 to 500°C Proceedings - Electronic Components and Technology Conference. 1058-1063. DOI: 10.1109/ECTC.2011.5898641  0.307
2011 Hess AE, Capadona JR, Shanmuganathan K, Hsu L, Rowan SJ, Weder C, Tyler DJ, Zorman CA. Development of a stimuli-responsive polymer nanocomposite toward biologically optimized, MEMS-based neural probes Journal of Micromechanics and Microengineering. 21. DOI: 10.1088/0960-1317/21/5/054009  0.333
2011 Rajasekhara S, Neuner BH, Zorman CA, Jegenyes N, Ferro G, Shvets G, Ferreira PJ, Kovar D. The influence of impurities and planar defects on the infrared properties of silicon carbide films Applied Physics Letters. 98. DOI: 10.1063/1.3585098  0.418
2011 Zorman CA, Parro RJ. Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS Silicon Carbide. 1: 411-451. DOI: 10.1002/Pssb.200844135  0.411
2010 Feng XL, Matheny MH, Zorman CA, Mehregany M, Roukes ML. Low voltage nanoelectromechanical switches based on silicon carbide nanowires. Nano Letters. 10: 2891-6. PMID 20698601 DOI: 10.1021/Nl1009734  0.373
2010 Du J, Zorman CA. The process and mechanism of low temperature silicon carbide-to-silicon direct bonding using amorphous hydrogenated silicon carbide films Micro and Nanosystems. 2: 100-107. DOI: 10.2174/1876402911002020100  0.639
2010 Hess AE, Sabens DM, Martin HB, Zorman CA. Polycrystalline diamond-on-polymer electrode arrays fabricated using a polymer-based transfer process Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3479691  0.362
2009 Burla RK, Chen L, Zorman CA, Mehregany M. Development of nickel wire bonding for high-temperature packaging of SiC devices Ieee Transactions On Advanced Packaging. 32: 564-574. DOI: 10.1109/Tadvp.2009.2015593  0.353
2009 Fu XA, Dunning J, Zorman CA, Mehregany M. Stress and strain gradient control of polycrystalline SiC films Transducers 2009 - 15th International Conference On Solid-State Sensors, Actuators and Microsystems. 1087-1090. DOI: 10.1109/SENSOR.2009.5285948  0.32
2009 Young DJ, Pehlivanoǧlu IE, Zorman CA. Silicon carbide MEMS-resonator-based oscillator Journal of Micromechanics and Microengineering. 19. DOI: 10.1088/0960-1317/19/11/115027  0.342
2009 Chang W, Zorman C. Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. 15: 875-880. DOI: 10.1007/S00542-009-0836-Z  0.644
2008 Chang WT, Zorman C. Electrical Characterization of Microelectromechanical Silicon Carbide Resonators. Sensors (Basel, Switzerland). 8: 5759-5774. PMID 27873838 DOI: 10.3390/S8095759  0.593
2008 Duzhko V, Du J, Zorman CA, Singer KD. Electric field patterning of organic nanoarchitectures with self-assembled molecular fibers Journal of Physical Chemistry C. 112: 12081-12084. DOI: 10.1021/Jp805010K  0.51
2008 Parro RJ, Scardelletti MC, Varaljay NC, Zimmerman S, Zorman CA. Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio Solid-State Electronics. 52: 1647-1651. DOI: 10.1016/J.Sse.2008.06.004  0.438
2008 Nagappa S, Zupan M, Zorman CA. Mechanical characterization of chemical-vapor-deposited polycrystalline 3C silicon carbide thin films Scripta Materialia. 59: 995-998. DOI: 10.1016/J.Scriptamat.2008.07.010  0.469
2008 Chang W, Zorman CA. Determination of Young’s moduli of 3C (110) single-crystal and (111) polycrystalline silicon carbide from operating frequencies Journal of Materials Science. 43: 4512-4517. DOI: 10.1007/S10853-008-2648-4  0.593
2007 Hess A, Parro R, Du J, Dunning J, Scardelletti M, Zorman CA. PECVD silicon carbide as a thin film packaging material for microfabricated neural electrodes Materials Research Society Symposium Proceedings. 1009: 8-13. DOI: 10.1557/Proc-1009-U04-03  0.665
2007 Summers JB, Scardelletti M, Parro R, Zorman CA. Development of amorphous SiC for MEMS-based microbridges Proceedings of Spie - the International Society For Optical Engineering. 6464. DOI: 10.1117/12.704705  0.404
2007 Du J, Zorman CA. Low temperature a-SiC/Si direct bonding technology for MEMS/NEMS Transducers and Eurosensors '07 - 4th International Conference On Solid-State Sensors, Actuators and Microsystems. 2075-2078. DOI: 10.1109/SENSOR.2007.4300573  0.325
2007 Fu XA, Trevino J, Noh S, Zorman CA, Mehregany M. Nitrogen doped polcrystalline 3C-SiC films deposited by LPCVD for MEMS applications Transducers and Eurosensors '07 - 4th International Conference On Solid-State Sensors, Actuators and Microsystems. 509-512. DOI: 10.1109/SENSOR.2007.4300179  0.349
2007 Chang WT, Mehregany M, Zorman CA. Energy dissipation in folded-beam MEMS resonators made from singleCrystal and poly crystalline 3C-SiC films Proceedings of the 2nd Ieee International Conference On Nano/Micro Engineered and Molecular Systems, Ieee Nems 2007. 740-744. DOI: 10.1109/NEMS.2007.352124  0.393
2007 Urzhumov YA, Korobkin D, Neuner B, Zorman C, Shvets G. Optical properties of sub-wavelength hole arrays in SiC membranes Journal of Optics a: Pure and Applied Optics. 9. DOI: 10.1088/1464-4258/9/9/S07  0.369
2007 Enderling S, Hedley J, Jiang L, Cheung R, Zorman C, Mehregany M, Walton AJ. Characterization of frequency tuning using focused ion beam platinum deposition Journal of Micromechanics and Microengineering. 17: 213-219. DOI: 10.1088/0960-1317/17/2/005  0.376
2007 Pozzi M, Hassan M, Harris AJ, Burdess JS, Jiang L, Lee KK, Cheung R, Phelps GJ, Wright NG, Zorman CA, Mehregany M. Mechanical properties of a 3C-SiC film between room temperature and 600 °c Journal of Physics D: Applied Physics. 40: 3335-3342. DOI: 10.1088/0022-3727/40/11/012  0.477
2007 Gao JR, Hajenius M, Tichelaar FD, Klapwijk TM, Voronov B, Grishin E, Gol'Tsman G, Zorman CA, Mehregany M. Monocrystalline NbN nanofilms on a 3C-SiCSi substrate Applied Physics Letters. 91. DOI: 10.1063/1.2766963  0.486
2007 Korobkin D, Urzhumov YA, Neuner B, Zorman C, Zhang Z, Mayergoyz ID, Shvets G. Mid-infrared metamaterial based on perforated SiC membrane: Engineering optical response using surface phonon polaritons Applied Physics a: Materials Science and Processing. 88: 605-609. DOI: 10.1007/S00339-007-4084-8  0.337
2007 Pozzi M, Harris AJ, Burdess JS, Lee KK, Cheung R, Phelps GJ, Wright NG, Zorman CA, Mehregany M. Mechanical properties of poly crystalline 3C-SiC heteroepitaxial layers 2007 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2007, Technical Proceedings. 4: 65-68.  0.307
2006 Chen L, Fu XA, Zorman CA, Mehregany M. Novel polycrystalline SiC films containing nanoscale through-pores by selective APCVD Materials Science Forum. 527: 755-758. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.755  0.505
2006 Fu XA, Trevino J, Mehregany M, Zorman C. Nitrogen-doping of polycrystalline 3C-SiC films deposited by low pressure chemical vapor deposition Materials Science Forum. 527: 311-314. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.311  0.472
2006 Dunning J, Fu XA, Mehregany M, Zorman CA. Characterization of low stress, undoped LPCVD polycrystalline SiC films for MEMS applications Materials Science Forum. 527: 1103-1106. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1103  0.496
2006 Keesara VV, Durand DM, Zorman CA. Fabrication and characterization of flexible, microfabricated neural electrode arrays made from liquid crystal polymer and polynorbornene Materials Research Society Symposium Proceedings. 926: 58-63. DOI: 10.1557/Proc-0926-Cc06-04  0.341
2006 Du J, Singh N, Summers JB, Zorman CA. Development of PECVD SiC for MEMS using 3MS as the precursor Materials Research Society Symposium Proceedings. 911: 283-288. DOI: 10.1557/Proc-0911-B05-28  0.673
2006 Wu CH, Zorman CA, Mehregany M. Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications Ieee Sensors Journal. 6: 316-323. DOI: 10.1109/Jsen.2006.870145  0.466
2006 Jun SC, Huang XMH, Manolidis M, Zorman CA, Mehregany M, Hone J. Electrothermal tuning of Al-SiC nanomechanical resonators Nanotechnology. 17: 1506-1511. DOI: 10.1088/0957-4484/17/5/057  0.34
2006 Espinosa HD, Peng B, Moldovan N, Friedmann TA, Xiao X, Mancini DC, Auciello O, Carlisle J, Zorman CA, Merhegany M. Elasticity, strength, and toughness of single crystal silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon Applied Physics Letters. 89. DOI: 10.1063/1.2336220  0.383
2006 Roy S, Zorman C, Mehregany M, Deanna R, Deeb C. The mechanical properties of polycrystalline 3C-SiC films grown on polysilicon substrates by atmospheric pressure chemical-vapor deposition Journal of Applied Physics. 99. DOI: 10.1063/1.2169875  0.467
2006 Hatty V, Kahn H, Trevino J, Zorman CA, Mehregany M, Ballarini R, Heuer AH. Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films Journal of Applied Physics. 99. DOI: 10.1063/1.2158135  0.469
2006 Jiang L, Cheung R, Hedley J, Hassan M, Harris AJ, Burdess JS, Mehregany M, Zorman CA. SiC cantilever resonators with electrothermal actuation Sensors and Actuators, a: Physical. 128: 376-386. DOI: 10.1016/J.Sna.2006.01.045  0.383
2006 Jiang L, Anderson S, Thong E, Cheung R, Zorman CA, Mehregany M. Fabrication of hall device structures in 3C-SiC using microelectromechanical processing technology Microelectronic Engineering. 83: 1396-1399. DOI: 10.1016/J.Mee.2006.01.212  0.491
2006 Gao JR, Hajenius M, Tichelaar FD, Voronov B, Grishina E, Klapwijk TM, Gol'tsman G, Zorman CA. Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? 17th International Symposium On Space Terahertz Technology 2006, Isstt 2006. 127-129.  0.358
2005 Lei S, Zorman CA, Garverick SL. An oversampled capacitance-to-voltage converter IC with application to time-domain characterization of MEMS resonators Ieee Sensors Journal. 5: 1353-1361. DOI: 10.1109/Jsen.2005.859236  0.337
2005 Jackson KM, Dunning J, Zorman CA, Mehregany M, Sharpe WN. Mechanical properties of epitaxial 3C silicon carbide thin films Journal of Microelectromechanical Systems. 14: 664-672. DOI: 10.1109/Jmems.2005.847933  0.439
2005 Wiser RF, Tabib-Azar M, Mehregany M, Zorman CA. Polycrystalline silicon-carbide surface-micromachined vertical resonators - Part II: Electrical testing and material property extraction Journal of Microelectromechanical Systems. 14: 579-589. DOI: 10.1109/Jmems.2005.844748  0.488
2005 Wiser RF, Chung J, Mehregany M, Zorman CA. Polycrystalline silicon-carbide surface-micromachined vertical resonators - Part I: Growth study and device fabrication Journal of Microelectromechanical Systems. 14: 567-578. DOI: 10.1109/Jmems.2005.844747  0.525
2005 Du J, Ko WH, Mehregany M, Zorman CA. Poly-SiC capacitive pressure sensors made by wafer bonding Proceedings of Ieee Sensors. 2005: 1267-1270. DOI: 10.1109/ICSENS.2005.1597937  0.308
2005 Jun SC, Huang XMH, Hone J, Zorman CA, Mehregany M. Evaluation of 3C-SiC nanomechanical resonators using room temperature magnetomotive transduction Proceedings of Ieee Sensors. 2005: 1042-1045. DOI: 10.1109/ICSENS.2005.1597881  0.365
2005 Huang XMH, Feng XL, Zorman CA, Mehregany M, Roukes ML. VHF, UHF and microwave frequency nanomechanical resonators New Journal of Physics. 7: 247-247. DOI: 10.1088/1367-2630/7/1/247  0.392
2005 Korobkin D, Urzhumov YA, Zorman C, Shvets G. Far-field detection of the super-lensing effect in the mid-infrared: Theory and experiment Journal of Modern Optics. 52: 2351-2364. DOI: 10.1080/09500340500275942  0.315
2005 Bellante JJ, Kahn H, Ballarini R, Zorman CA, Mehregany M, Heuer AH. Fracture toughness of polycrystalline silicon carbide thin films Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1864246  0.394
2005 Fu XA, Dunning JL, Zorman CA, Mehregany M. Measurement of residual stress and elastic modulus of polycrystalline 3C-SiC films deposited by low-pressure chemical vapor deposition Thin Solid Films. 492: 195-202. DOI: 10.1016/J.Tsf.2005.07.236  0.474
2005 Fu XA, Dunning JL, Zorman CA, Mehregany M. Polycrystalline 3C-SiC thin films deposited by dual precursor LPCVD for MEMS applications Sensors and Actuators, a: Physical. 119: 169-176. DOI: 10.1016/J.Sna.2004.09.009  0.496
2005 Jiang L, Hassan M, Cheung R, Harris AJ, Burdess JS, Zorman CA, Mehregany M. Dry release fabrication and testing of SiC electrostatic cantilever actuators Microelectronic Engineering. 78: 106-111. DOI: 10.1016/J.Mee.2004.12.015  0.406
2004 Fu XA, Dunning J, Zorman CA, Mehregany M. Development of a high-throughput LPCVD process for depositing low stress poly-SiC Materials Science Forum. 457: 305-308. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.305  0.5
2004 Huang XMH, Feng XL, Prakash MK, Kumar S, Zorman CA, Mehregany M, Roukes ML. Fabrication of suspended nanomechanical structures from bulk 6H-SiC substrates Materials Science Forum. 457: 1531-1534. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1531  0.368
2004 Dunning J, Fu XA, Rajgopal S, Mehregany M, Zorman CA. Characterization of polycrystalline SiC thin films for MEMS applications using surface micromachined devices Materials Science Forum. 457: 1523-1526. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1523  0.496
2004 Fu XA, Dunning J, Zorman CA, Mehregany M. Young's modulus and residual stress of polycrystalline 3C-SiC films grown by LPCVD and measured by the load-deflection technique Materials Science Forum. 457: 1519-1522. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1519  0.473
2004 Zorman CA, Mehregany M. Advanced processing techniques for silicon carbide MEMS and NEMS Materials Science Forum. 457: 1451-1456. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1451  0.439
2004 Fu XA, Zorman CA, Mehregany M. Surface roughness control of 3C-SiC films during the epitaxial growth process Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1819833  0.447
2004 Mehregany M, Zorman CA. Silicon Carbide Micro- and Nanoelectromechanical Systems Proceedings of Spie - the International Society For Optical Engineering. 5344. DOI: 10.1117/12.548920  0.469
2004 Young DJ, Du J, Zorman CA, Ko WH. High-temperature single-crystal 3C-SiC capacitive pressure sensor Ieee Sensors Journal. 4: 464-470. DOI: 10.1109/Jsen.2004.830301  0.632
2004 Fu XA, Jezeski R, Zorman CA, Mehregany M. Use of deposition pressure to control residual stress in polycrystalline SiC films Applied Physics Letters. 84: 341-343. DOI: 10.1063/1.1640781  0.466
2004 Mehregany M, Zorman CA. Silicon Carbide Micro- and Nanoelectromechanical Systems Proceedings of Spie - the International Society For Optical Engineering. 5346.  0.369
2003 Fu XA, Dunning J, Rajgopal S, Zhang M, Zorman CA, Mehregany M. Mechanical properties and morphology of polycrystalline 3C-SiC films deposited on Si and SiO2 by LPCVD Materials Research Society Symposium - Proceedings. 795: 381-386. DOI: 10.1557/Proc-795-U11.3  0.443
2003 Chen L, Fu XA, Zorman CA, Mehregany M. Fabrication of micro- and nanoscale SiC structures using selective deposition processes Materials Research Society Symposium - Proceedings. 782: 37-42. DOI: 10.1557/Proc-782-A2.2  0.491
2003 Jiang L, Cheung R, Hassan M, Harris AJ, Burdess JS, Zorman CA, Mehregany M. Fabrication of SiC microelectromechanical systems using one-step dry etching Journal of Vacuum Science & Technology B. 21: 2998-3001. DOI: 10.1116/1.1627804  0.359
2003 Wiser RF, Zorman CA, Mehregany M. Fabrication and testing of vertically-actuated polycrystalline SiC micromechanical resonators for MHz frequency applications Transducers 2003 - 12th International Conference On Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. 2: 1164-1167. DOI: 10.1109/SENSOR.2003.1216978  0.381
2003 Kuo HI, Zorman CA, Mehregany M. Fabrication and testing of single crystalline 3C-SiC devices using a novel SiC-on-insulator substrate Transducers 2003 - 12th International Conference On Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. 1: 742-745. DOI: 10.1109/SENSOR.2003.1215580  0.384
2003 Dong Y, Zorman C, Molian P. Femtosecond pulsed laser micromachining of single crystalline 3C–SiC structures based on a laser-induced defect-activation process Journal of Micromechanics and Microengineering. 13: 680-685. DOI: 10.1088/0960-1317/13/5/320  0.359
2003 Mitchell JS, Zorman CA, Kicher T, Roy S, Mehregany M. Examination of bulge test for determining residual stress, Young's modulus, and Poisson's ratio of 3C-SiC thin films Journal of Aerospace Engineering. 16: 46-54. DOI: 10.1061/(Asce)0893-1321(2003)16:2(46)  0.401
2003 Seyller T, Sieber N, Stark T, Ley L, Zorman CA, Mehregany M. Stacking rearrangement at 6H-SiC(0 0 0 1) surfaces during thermal hydrogenation Surface Science. 532: 698-704. DOI: 10.1016/S0039-6028(03)00157-2  0.319
2002 Song X, Rajgopal S, Melzak JM, Zorman CA, Mehregany M. Development of a multilayer SiC surface micromachining process with capabilities and design rules comparable to conventional polysilicon surface micromachining Materials Science Forum. 389: 755-758. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.755  0.461
2002 Wiser RF, Chung J, Mehregany M, Zorman CA. Growth of polycrystalline silicon carbide on thin polysilicon sacrificial layers for surface micromachining applications Materials Research Society Symposium - Proceedings. 741: 67-72. DOI: 10.1557/Proc-741-J4.3  0.489
2002 Fu XA, Zorman CA, Mehregany M. Chemical mechanical polishing of cubic silicon carbide films grown on Si(100) wafers Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1517285  0.47
2002 Zorman CA, Rajgopal S, Fu XA, Jezeski R, Melzak J, Mehregany M. Deposition of polycrystalline 3C-SiC films on 100 mm diameter Si(100) wafers in a large-volume LPCVD furnace Electrochemical and Solid-State Letters. 5. DOI: 10.1149/1.1506461  0.488
2002 Roy S, DeAnna RG, Zorman CA, Mehregany M. Fabrication and characterization of polycrystalline SiC resonators Ieee Transactions On Electron Devices. 49: 2323-2332. DOI: 10.1109/Ted.2002.807445  0.454
2002 Sieber N, Stark T, Seyller T, Ley L, Zorman CA, Mehregany M. Origin of the split Si-H stretch mode on hydrogen terminated 6H-SiC(0001): Titration of crystal truncation Applied Physics Letters. 80: 4726-4728. DOI: 10.1063/1.1488692  0.326
2002 Rohmfeld S, Hundhausen M, Ley L, Zorman CA, Mehregany M. Quantitative evaluation of biaxial strain in epitaxial 3C-SiC layers on Si(100) substrates by Raman spectroscopy Journal of Applied Physics. 91: 1113-1117. DOI: 10.1063/1.1427408  0.386
2002 Zorman CA, Mehregany M. Silicon Carbide for MEMS and NEMS - An Overview Proceedings of Ieee Sensors. 1: 1109-1114.  0.316
2001 Wu C, Chung J, Hong MH, Zorman CA, Pirouz P, Mehregany M. A Comparison of SiO 2 and Si 3 N 4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si Materials Science Forum. 171-174. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.171  0.421
2001 Wu CH, Chung J, Hong MH, Zorman CA, Pirouz P, Mehregany M. Microstructure and surface morphology of thin 3C-SiC films grown on (100) Si substrates using an APCVD-based carbonization process Materials Science Forum. 353: 167-170. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.167  0.337
2001 Davis RF, Gehrke T, Linthicum KJ, Rajagopal P, Roskowski AM, Zheleva T, Preble EA, Zorman CA, Mehregany M, Schwarz U, Schuck J, Grober R. Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates Mrs Internet Journal of Nitride Semiconductor Research. 6. DOI: 10.1557/S1092578300000260  0.423
2001 Kuo HI, Zorman C, Mehregany M. A novel method of fabricating SiC-On-insulator substrates for use in MEMS Materials Research Society Symposium Proceedings. 681: 101-106. DOI: 10.1557/Proc-681-I5.16  0.436
2001 Deeb C, Kahn H, Milhet X, Zorman C, Mehregany M, Heuer AH. Low temperature (300°C) formation of thermodynamically stable NiSi2 contacts to SiC Materials Research Society Symposium - Proceedings. 640. DOI: 10.1557/Proc-640-H5.22  0.459
2001 Mehregany M, Zorman CA. Micromachining techniques for advanced SiC MEMS Materials Research Society Symposium - Proceedings. 640. DOI: 10.1557/Proc-640-H4.3  0.464
2001 Mehregany M, Zorman CA. Surface Micromachining: A Brief Introduction Mrs Bulletin. 26: 289-290. DOI: 10.1557/Mrs2001.61  0.305
2001 Yang YT, Ekinci KL, Huang XMH, Schiavone LM, Roukes ML, Zorman CA, Mehregany M. Monocrystalline silicon carbide nanoelectromechanical systems Applied Physics Letters. 78: 162-164. DOI: 10.1063/1.1338959  0.424
2001 Davis RF, Gehrke T, Linthicum KJ, Preble E, Rajagopal P, Ronning C, Zorman C, Mehregany M. Conventional and pendeo-epitaxial growth of GaN(0 0 0 1) thin films on Si(1 1 1) substrates Journal of Crystal Growth. 231: 335-341. DOI: 10.1016/S0022-0248(01)01462-2  0.507
2001 Davis RF, Gehrke T, Linthicum KJ, Zheleva TS, Preble EA, Rajagopal P, Zorman CA, Mehregany M. Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization Journal of Crystal Growth. 225: 134-140. DOI: 10.1016/S0022-0248(01)00836-3  0.485
2001 Wu CH, Chung J, Hong MH, Zorman CA, Pirouz P, Mehregany M. Comparison of SiO2 and Si3N4 masks for selective epitaxial growth of 3C-SiC films on Si Materials Science Forum. 353: 171-174.  0.376
2001 Davis RF, Gehrke T, Linthicum KJ, Zheleva TS, Rajagopal P, Zorman CA, Mehregany M. Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and Si(111) substrates Zeitschrift Fuer Metallkunde/Materials Research and Advanced Techniques. 92: 163-166.  0.389
2000 Rohmfeld S, Hundhausen M, Ley L, Zorman CA, Mehregany M. Raman spectroscopy on biaxially strained epitaxial layers of 3C-SiC on Si Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.595  0.42
2000 Wu CH, Zorman CA, Mehregany M. Characterization of polycrystalline SiC grown on SiO2 and Si3N4 by APCVD for MEMS applications Materials Science Forum. 541-544. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.541  0.422
2000 Rajan N, Zorman CA, Mehregany M. Bulk micromachining of polycrystalline SiC using Si molds fabricated by Deep Reactive Ion Etching Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1145  0.469
2000 Song X, Guo S, Zorman CA, Wu CH, Yasseen AA, Mehregany M. Molding-based thin film patterning techniques for SiC surface micromachining Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1141  0.461
2000 Davis RF, Gehrke T, Linthicum KJ, Zheleva TS, Rajagopal P, Zorman CA, Mehregany M. Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates Mrs Internet Journal of Nitride Semiconductor Research. 5: 49-61. DOI: 10.1557/S1092578300004075  0.436
2000 McMahon JJ, Melzak JM, Zorman CA, Chung J, Mehregany M. Deposition and characterization of in-situ boron doped polycrystalline silicon films for microelectromechanical systems applications Materials Research Society Symposium - Proceedings. 605: 31-36. DOI: 10.1557/Proc-605-31  0.476
2000 Mehregany M, Zorman CA, Roy S, Fleischman AJ, Wu CH, Rajan N. Silicon carbide for microelectromechanical systems International Materials Reviews. 45: 85-108. DOI: 10.1179/095066000101528322  0.435
2000 Yasseen AA, Wu CH, Zorman CA, Mehregany M. Fabrication and testing of surface micromachined polycrystalline SiC micromotors Ieee Electron Device Letters. 21: 164-166. DOI: 10.1109/55.830969  0.367
2000 Koch C, Spence JCH, Zorman C, Mehregany M, Chung J. Modelling of HREM and nanodiffraction for dislocation kinks and core reconstruction Journal of Physics Condensed Matter. 12: 10175-10183. DOI: 10.1088/0953-8984/12/49/317  0.355
2000 Zorman CA, Mearini GT, Hoffman RW. In situ heating study of hydrogen-containing adsorbates on polycrystalline diamond surfaces using elastic recoil detection Diamond and Related Materials. 9: 1518-1523. DOI: 10.1016/S0925-9635(00)00278-8  0.305
2000 Gehrke T, Linthicum KJ, Preble E, Rajagopal P, Ronning C, Zorman C, Mehregany M, Davis RF. Pendeo-epitaxial growth of gallium nitride on silicon substrates Journal of Electronic Materials. 29: 306-310. DOI: 10.1007/S11664-000-0068-6  0.463
2000 Wu CH, Zorman CA, Mehregany M. Characterization of polycrystalline SiC grown on SiO2 and Si3N4 by APCVD for MEMS applications Materials Science Forum. 338.  0.379
2000 Davis RF, Gehrke T, Linthicum KJ, Zheleva TS, Rajagopal P, Zorman CA, Mehregany M. Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates Mrs Internet Journal of Nitride Semiconductor Research. 5.  0.351
1999 Linthicum KJ, Gehrke T, Thomson DB, Tracy KM, Carlson EP, Smith TP, Zheleva TS, Zorman CA, Mehregany M, Davis RF. Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques Mrs Internet Journal of Nitride Semiconductor Research. 4: 477-483. DOI: 10.1557/S1092578300002921  0.305
1999 Davis RF, Gehrke T, Linthicum KJ, Zheleva TS, Rajagopal P, Zorman CA, Mehregany M. Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W2.1  0.374
1999 Linthicum KJ, Gehrke T, Thomson D, Ronning C, Carlson EP, Zorman CA, Mehregany M, Davis RF. Pendeo-epitaxial growth of GaN on SiC and silicon substrates via metalorganic chemical vapor deposition Mrs Proceedings. 572: 307-313. DOI: 10.1557/Proc-572-307  0.413
1999 Azzam Yasseen A, Zorman CA, Mehregany M. Roughness reduction of 3C-SiC surfaces using SiC-based mechanical polishing slurries Journal of the Electrochemical Society. 146: 327-330. DOI: 10.1149/1.1391608  0.43
1999 Rajan N, Mehregany M, Zorman CA, Stefanescu S, Kicher TP. Fabrication and testing of micromachined silicon carbide and nickel fuel atomizers for gas turbine engines Journal of Microelectromechanical Systems. 8: 251-257. DOI: 10.1109/84.788628  0.373
1999 Yasseen AA, Zorman CA, Mehregany M. Surface micromachining of polycrystalline SiC films using microfabricated molds of SiO2 and polysilicon Journal of Microelectromechanical Systems. 8: 237-242. DOI: 10.1109/84.788626  0.491
1999 Mehregany M, Zorman CA. SiC MEMS: Opportunities and challenges for applications in harsh environments Thin Solid Films. 355: 518-524. DOI: 10.1016/S0257-8972(99)00374-6  0.319
1999 Hung Wu C, Zorman CA, Mehregany M. Growth of polycrystalline SiC films on SiO2 and Si3N4 by APCVD Thin Solid Films. 355: 179-183. DOI: 10.1016/S0040-6090(99)00494-0  0.489
1999 Linthicum KJ, Gehrke T, Thomson D, Ronning C, Carlson EP, Zorman CA, Mehregany M, Davis RF. Pendeo-epitaxial growth of GaN on SiC and silicon substrates via metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 572: 307-313.  0.304
1999 Linthicum KJ, Gehrke T, Thomson DB, Carlson EP, Smith TP, Zheleva TS, Zorman CA, Mehregany M, Davis RF. Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques Materials Research Society Symposium - Proceedings. 537.  0.339
1998 Fleischman AJ, Roy S, Zorman CA, Mehregany M. Behaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated Temperatures Materials Science Forum. 889-894. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.889  0.369
1998 Fleischman AJ, Wei X, Zorman CA, Mehregany M. Surface Micromachining of Polycrystalline SiC Deposited on SiO2 by APCVD Materials Science Forum. 885-888. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.885  0.406
1998 Chandra K, Zorman CA, Mehregany M. Spatial uniformity of the mechanical properties of 3C-SiC films grown on 4-inch Si wafers as a function of film growth conditions Materials Science Forum. 264: 635-638. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.635  0.425
1998 Zorman CA, Vinod KN, Yasseen AA, Mehregany M. Fabrication of 3C-SiC on SiO2 Structures Using Wafer Bonding Techniques Materials Science Forum. 223-226. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.223  0.349
1998 Wu CH, Fleischman AJ, Zorman CA, Mehregany M. Growth and characterization of SiC films on large-area Si wafers by APCVD - Temperature dependence Materials Science Forum. 264: 179-182. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.179  0.476
1998 Linthicum KJ, Gehrke T, Thomson DB, Tracy KM, Carlson EP, Smith TP, Zheleva TS, Zorman CA, Mehregany M, Davis RF. Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G4.9  0.444
1998 Zorman CA, Roy S, Wu C, Fleischman AJ, Mehregany M. Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon Journal of Materials Research. 13: 406-412. DOI: 10.1557/Jmr.1998.0053  0.501
1998 Fleischman AJ, Zorman CA, Mehregany M. Etching of 3C-SiC using CHF3/O2 and CHF3/O2/He plasmas at 1.75 Torr Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 536-539. DOI: 10.1116/1.589858  0.308
1998 Rajan N, Zorman CA, Mehregany M, Deanna R, Harvey RJ. Effect of MEMS-compatible thin film hard coatings on the erosion resistance of silicon micromachined atomizers Surface and Coatings Technology. 108: 391-397. DOI: 10.1016/S0257-8972(98)00596-9  0.412
1998 Rajan N, Zorman CA, Mehregany M, DeAnna R, Harvey R. Performance of 3C-SiC thin films as protective coatings for silicon-micromachined atomizers Thin Solid Films. 315: 170-178. DOI: 10.1016/S0040-6090(97)00708-6  0.418
1998 Fleischman AJ, Wei X, Zorman CA, Mehregany M. Surface micromachining of polycrystalline SiC deposited on SiO2 by APCVD Materials Science Forum. 264: 885-888.  0.401
1998 Deanna RG, Fleischman AJ, Zorman CA, Mehregany M. Design, operation, and modeling of a vertical APCVD reactor for silicon carbide film growth Journal of Wide Bandgap Materials. 6: 280-295.  0.305
1998 Zorman CA, Roy S, Wu CH, Fleischman AJ, Mehregany M. Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon Journal of Materials Research. 13: 406-412.  0.407
1997 Vinod KN, Zorman CA, Mehregany M. A novel SiC on insulator technology using wafer bonding Sensors. 1: 653-656. DOI: 10.1109/Sensor.1997.613736  0.474
1997 Zorman CA, Mehregany M, Kahn H, Heuer AH. New developments in MEMS using SiC and TiNi shape memory alloy materials Current Opinion in Solid State and Materials Science. 2: 566-570. DOI: 10.1016/S1359-0286(97)80046-0  0.314
1997 Roy S, Zorman CA, Wu CH, Fleischman AJ, Mehregany M. XRD and XTEM investigation of polycrystalline silicon carbide on polycrystalline silicon Materials Research Society Symposium - Proceedings. 444: 81-86.  0.399
1996 Fleischman AJ, Roy S, Zorman CA, Mehregany M, Matus LG. Polycrystalline silicon carbide for surface micromachining Proceedings of the Ieee Micro Electro Mechanical Systems (Mems). 234-238.  0.436
1995 Zorman CA, Fleischman AJ, Dewa AS, Mehregany M, Jacob C, Nishino S, Pirouz P. Epitaxial growth of 3C-SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition Journal of Applied Physics. 78: 5136-5138. DOI: 10.1063/1.359745  0.482
1995 Mearini GT, Krainsky IL, Dayton JA, Wang Y, Zorman CA, Angus JC, Hoffman RW, Anderson DF. Stable secondary electron emission from chemical vapor deposited diamond films coated with alkali-halides Applied Physics Letters. 242. DOI: 10.1063/1.113559  0.361
1994 Shiao J, Zorman CA, Hoffman RW. Synthesis and characterization of nitrogen containing diamondlike carbon films made by ion beam deposition Mrs Proceedings. 349: 465. DOI: 10.1557/Proc-349-465  0.36
1994 Mearini GT, Krainsky IL, Dayton JA, Wang Y, Zorman CA, Angus JC, Hoffman RW. Stable secondary electron emission observations from chemical vapor deposited diamond Applied Physics Letters. 65: 2702-2704. DOI: 10.1063/1.112611  0.354
1994 Zorman CA, Shiao J, Heidger S, Hoffman RW. Composition and physical properties of thin a-C:N and a-C:N:H films deposited by ion beam techniques Surface and Interface Analysis. 21: 95-100. DOI: 10.1002/Sia.740210206  0.412
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