| Year |
Citation |
Score |
| 2019 |
Vos M, Mitchell IV. Anisotropic strain relaxation in the case of Au/Pd(110) interface formation. Physical Review. B, Condensed Matter. 45: 9398-9401. PMID 10000804 DOI: 10.1103/Physrevb.45.9398 |
0.301 |
|
| 2019 |
Lu ZH, Sham TK, Vos M, Bzowski A, Mitchell IV, Norton PR. Unoccupied d states of Au impurities in silicon as studied by x-ray-absorption spectroscopy. Physical Review. B, Condensed Matter. 45: 8811-8814. PMID 10000735 DOI: 10.1103/Physrevb.45.8811 |
0.404 |
|
| 2019 |
Zhang PX, Mitchell IV, Tong BY, Schultz PJ, Lockwood DJ. Depth-dependent disordering in a-Si produced by self-ion-implantation. Physical Review. B, Condensed Matter. 50: 17080-17084. PMID 9976105 DOI: 10.1103/Physrevb.50.17080 |
0.461 |
|
| 2007 |
Harmer SL, Goncharova LV, Kolarova R, Lennard WN, Muñoz-Márquez MA, Mitchell IV, Nesbitt HW. Surface structure of sphalerite studied by medium energy ion scattering and XPS Surface Science. 601: 352-361. DOI: 10.1016/J.Susc.2006.10.001 |
0.375 |
|
| 2006 |
Ruffell S, Mitchell IV, Simpson PJ. Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 242: 591-594. DOI: 10.1016/J.Nimb.2005.08.079 |
0.507 |
|
| 2005 |
Ruffell S, Mitchell IV, Simpson PJ. Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation Journal of Applied Physics. 98. DOI: 10.1063/1.2113409 |
0.383 |
|
| 2005 |
Simpson TW, Mitchell IV. Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1947384 |
0.469 |
|
| 2005 |
Ruffell S, Simpson PJ, Mitchell IV. Electrical characterization of 5 keV phosphorous implants in silicon Journal of Applied Physics. 98. DOI: 10.1063/1.1935128 |
0.433 |
|
| 2005 |
Ruffell S, Mitchell IV, Simpson PJ. Annealing behavior of low-energy ion-implanted phosphorus in silicon Journal of Applied Physics. 97. DOI: 10.1063/1.1929861 |
0.492 |
|
| 2005 |
Piva PG, Mitchell IV, Chen H, Feenstra RM, Aers GC, Poole PJ, Charbonneau S. InGaAs/InP quantum well intermixing studied by high-resolution x-ray diffraction and grazing incidence x-ray analysis Journal of Applied Physics. 97. DOI: 10.1063/1.1870114 |
0.504 |
|
| 2004 |
Bolorizadeh MA, Ruffell S, Mitchell IV, Gwilliam R. Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 225: 345-352. DOI: 10.1016/J.Nimb.2004.04.180 |
0.435 |
|
| 2003 |
Matsuura N, Simpson TW, Mitchell IV, Mei XY, Morales P, Ruda HE. Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching Applied Physics Letters. 81: 4826-4828. DOI: 10.1063/1.1527693 |
0.481 |
|
| 2003 |
Kim J, Lennard WN, McNorgan CP, Hendriks J, Mitchell IV, Landheer D, Gredley J. Depth profiling of ultrathin films using medium energy ion scattering Current Applied Physics. 3: 75-82. DOI: 10.1016/S1567-1739(02)00240-7 |
0.428 |
|
| 2002 |
Matsuura N, Simpson TW, McNorgan CP, Mitchell IV, Mei XY, Morales P, Ruda HE. Nanometer-scale pattern transfer using ion implantation Materials Research Society Symposium - Proceedings. 739: 237-242. DOI: 10.1557/Proc-739-H8.3 |
0.441 |
|
| 2001 |
Simpson TW, Gallivan PA, Mitchell IV. Implantation induced selective chemical etching of indium phosphide Electrochemical and Solid-State Letters. 4. DOI: 10.1149/1.1346901 |
0.486 |
|
| 2001 |
Chen H, McKay HA, Feenstra RM, Aers GC, Poole PJ, Williams RL, Charbonneau S, Piva PG, Simpson TW, Mitchell IV. InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy Journal of Applied Physics. 89: 4815-4823. DOI: 10.1063/1.1361237 |
0.495 |
|
| 2001 |
Simpson TW, Mitchell IV. Annealing behavior of implanted helium in indium phosphide Applied Physics Letters. 78: 207-209. DOI: 10.1063/1.1337643 |
0.446 |
|
| 2000 |
Simpson TW, Mitchell IV. Co-Implantation and the Role of Implant Damage in the Thermal Stability of Implanted Helium in Indium Phosphide Mrs Proceedings. 647. DOI: 10.1557/Proc-647-O6.4 |
0.423 |
|
| 2000 |
Simpson TW, Piva PG, Mitchell IV. Chemical Effects in Ion Implantation Induced Quantum Well Intermixing Mrs Proceedings. 647. DOI: 10.1557/Proc-647-O5.16 |
0.763 |
|
| 2000 |
Landheer D, Ma P, Lennard WN, Mitchell IV, McNorgan C. Analysis of silicon-oxide-silicon nitride stacks by medium-energy ion scattering Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 2503-2506. DOI: 10.1116/1.1285991 |
0.382 |
|
| 2000 |
Huang MB, Myler U, Simpson PJ, Mitchell IV. Positron annihilation study of defects in boron implanted silicon Journal of Applied Physics. 87: 7685-7691. DOI: 10.1063/1.373441 |
0.491 |
|
| 2000 |
Bouchard J, Têtu M, Janz S, Xu D-, Wasilewski ZR, Piva P, Akano UG, Mitchell IV. Quasi-phase matched second-harmonic generation in an AlxGa1−xAs asymmetric quantum-well waveguide using ion-implantation-enhanced intermixing Applied Physics Letters. 77: 4247-4249. DOI: 10.1063/1.1335545 |
0.377 |
|
| 2000 |
Piva PG, Goldberg RD, Mitchell IV, Labrie D, Leon R, Charbonneau S, Wasilewski ZR, Fafard S. Enhanced degradation resistance of quantum dot lasers to radiation damage Applied Physics Letters. 77: 624-626. DOI: 10.1063/1.127065 |
0.42 |
|
| 1999 |
Haysom JE, Delâge A, He JJ, Koteles ES, Poole PJ, Feng Y, Goldberg RD, Mitchell IV, Charbonneau S. Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing Ieee Journal of Quantum Electronics. 35: 1354-1363. DOI: 10.1109/3.784598 |
0.398 |
|
| 1999 |
Chen H, Feenstra RM, Piva PG, Goldberg RD, Mitchell IV, Aers GC, Poole PJ, Charbonneau S. Enhanced Group-V Intermixing In Ingaas/Inp Quantum Wells Studied By Cross-Sectional Scanning Tunneling Microscopy Applied Physics Letters. 75: 79-81. DOI: 10.1063/1.124282 |
0.454 |
|
| 1999 |
Castell MR, Simpson TW, Mitchell IV, Perovic DD, Baribeau J-. Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging Applied Physics Letters. 74: 2304-2306. DOI: 10.1063/1.123832 |
0.46 |
|
| 1999 |
Lennard WN, Massoumi GR, Simpson TW, Mitchell IV. Improved stoichiometry measurements using 4He elastic backscattering: experiment and simulation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 152: 370-376. DOI: 10.1016/S0168-583X(99)00180-9 |
0.434 |
|
| 1999 |
Simpson TW, Mitchell IV, Este GO, Shepherd FR. Ion implantation induced selective area exfoliation of InP and GaAs Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 148: 381-385. DOI: 10.1016/S0168-583X(98)00703-4 |
0.494 |
|
| 1998 |
Goldberg RD, Mitchell IV, Piva PG, Tan HH, Jagadish C, Poole PJ, Aers GC, Charbonneau S, Weatherly GC, Johnson MB, Gal M, Springthorpe AJ, Chen H, Feenstra RM. Selective Intermixing of Ion Irradiated Semiconductor Heterostructures Mrs Proceedings. 540. DOI: 10.1557/Proc-540-15 |
0.76 |
|
| 1998 |
Piva PG, Goldberg RD, Mitchell IV, Fafard S, Dion M, Buchanan M, Charbonneau S, Hillier G, Miner C. Reduced 980 nm laser facet absorption by band gap shifted extended cavities Journal of Vacuum Science & Technology B. 16: 1790-1793. DOI: 10.1116/1.590230 |
0.451 |
|
| 1998 |
Haysom JE, Poole PJ, Feng Y, Koteles ES, He JJ, Charbonneau S, Goldberg RD, Mitchell IV. Lateral selectivity of ion-induced quantum well intermixing Journal of Vacuum Science and Technology. 16: 817-820. DOI: 10.1116/1.581064 |
0.53 |
|
| 1998 |
Charbonneau S, Koteles ES, Poole PJ, He JJ, Aers GC, Haysom J, Buchanan M, Feng Y, Delage A, Yang F, Davies M, Goldberg RD, Piva PG, Mitchell IV. Photonic integrated circuits fabricated using ion implantation Ieee Journal of Selected Topics in Quantum Electronics. 4: 772-793. DOI: 10.1109/2944.720491 |
0.484 |
|
| 1998 |
Piva PG, Charbonneau S, Goldberg RD, Mitchell IV, Hillier G, Miner C. Ion implantation enhanced intermixing of Al-free 980 nm laser structures Applied Physics Letters. 73: 67-69. DOI: 10.1063/1.121725 |
0.542 |
|
| 1998 |
Janz S, Buchanan M, Meer vdP, Wasilewski Z, Xu D, Piva P, Mitchell I, Akano U, Fiore AA. Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing Applied Physics Letters. 72: 3097-3099. DOI: 10.1063/1.121558 |
0.471 |
|
| 1998 |
Piva PG, Goldberg RD, Mitchell IV, Chen H, Feenstra RM, Weatherly GC, McComb DW, Aers GC, Poole PJ, Charbonneau S. A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells Applied Physics Letters. 72: 1599-1601. DOI: 10.1063/1.121185 |
0.737 |
|
| 1997 |
Koteles ES, He JJ, Charbonneau NS, Poole PJ, Aers GC, Feng Y, Goldberg RD, Mitchell IV. Polarization-insensitive quantum well optoelectronic devices using quantum well shape modification Proceedings of Spie. 2918: 184-192. DOI: 10.1117/12.265364 |
0.414 |
|
| 1997 |
Huang LJ, Hung Y, Chang S, Massoumi GR, Lennard WN, Mitchell IV. Characterization of carbon and carbon nitride thin films using time-of-flight secondary-ion-mass spectrometry Journal of Vacuum Science and Technology. 15: 2196-2201. DOI: 10.1116/1.580533 |
0.369 |
|
| 1997 |
Piva PG, Fafard S, Dion M, Buchanan M, Charbonneau S, Goldberg RD, Mitchell IV. Reduction of InGaAs/GaAs laser facet temperatures by band gap shifted extended cavities Applied Physics Letters. 70: 1662-1664. DOI: 10.1063/1.118663 |
0.4 |
|
| 1997 |
Goldberg RD, Mitchell IV, Poole P, Labrie D, Lafontaine H, Aers GC, Williams R, Dion M, Charbonneau S, Ramanujancha K, Weatherly GC. Ion beam intermixing of semiconductor heterostructures for optoelectronic applications Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 127: 418-422. DOI: 10.1016/S0168-583X(96)00967-6 |
0.55 |
|
| 1997 |
Simpson TW, Mitchell IV. Extended defect formation and the flux of interstitials in Si-ion implanted silicon Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 94-97. DOI: 10.1016/S0168-583X(96)00858-0 |
0.499 |
|
| 1996 |
Huang MB, Myler U, Simpson TW, Simpson PJ, Mitchell IV. Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon Mrs Proceedings. 439: 41. DOI: 10.1557/Proc-439-41 |
0.436 |
|
| 1996 |
Akano UG, Mitchell IV, Shepherd FR, Miner CJ, Margittai A, Svilans M. Electrical isolation of pin photodiode devices by oxygen ion bombardment Canadian Journal of Physics. 74: 59-63. DOI: 10.1139/P96-833 |
0.488 |
|
| 1996 |
He JJ, Koteles ES, Davis M, Poole PJ, Dion M, Feng Y, Charbonneau S, Piva P, Buchanan M, Goldberg R, Mitchell I. Transparency of band-gap-shifted InGaAsP/InP quantum-well waveguides Canadian Journal of Physics. 74: 32-34. DOI: 10.1139/P96-827 |
0.391 |
|
| 1996 |
He JJ, Koteles ES, Poole PJ, Feng Y, Davis M, Charbonneau NS, Goldberg RD, Mitchell IV. Photonic-integrated circuits and components using quantum well intermixing Proceedings of Spie. 2891: 2-9. DOI: 10.1117/12.253161 |
0.461 |
|
| 1996 |
Huang LJ, Lau WM, Tang HT, Lennard WN, Mitchell IV, Landheer D, Baribeau J‐, Ingrey S. Structure of the SiNx/GaAs (110) interface modified with ultrathin Si and sulfur passivation Journal of Vacuum Science & Technology B. 14: 2895-2900. DOI: 10.1116/1.588931 |
0.383 |
|
| 1996 |
Poole PJ, Davies M, Dion M, Feng Y, Charbonneau S, Goldberg RD, Mitchell IV. The fabrication of a broad-spectrum light-emitting diode using high-energy ion implantation Ieee Photonics Technology Letters. 8: 1145-1147. DOI: 10.1109/68.531817 |
0.456 |
|
| 1996 |
Poole PJ, Charbonneau S, Dion M, Aers GC, Buchanan M, Goldberg RD, Mitchell IV. Demonstration of an ion-implanted, wavelength-shifted quantum-well laser Ieee Photonics Technology Letters. 8: 16-18. DOI: 10.1109/68.475763 |
0.453 |
|
| 1996 |
He J‐, Charbonneau S, Poole PJ, Aers GC, Feng Y, Koteles ES, Goldberg RD, Mitchell IV. Polarization insensitive InGaAs/InGaAsP/InP amplifiers using quantum well intermixing Applied Physics Letters. 69: 562-564. DOI: 10.1063/1.117787 |
0.461 |
|
| 1996 |
Noël J‐, Melville D, Jones T, Shepherd FR, Miner CJ, Puetz N, Fox K, Poole PJ, Feng Y, Koteles ES, Charbonneau S, Goldberg RD, Mitchell IV. High-reliability blue-shifted InGaAsP/InP lasers Applied Physics Letters. 69: 3516-3518. DOI: 10.1063/1.117230 |
0.46 |
|
| 1996 |
Labrie D, Aers GC, Lafontaine H, Williams RL, Charbonneau S, Goldberg RD, Mitchell IV. Effects of low temperature preannealing on ion‐implant assisted intermixing of Si1−xGex/Si quantum wells Applied Physics Letters. 69: 3866-3868. DOI: 10.1063/1.117131 |
0.479 |
|
| 1996 |
Labrie D, Lafontaine H, Rowell N, Charbonneau S, Houghton D, Goldberg RD, Mitchell IV. Quantum‐well intermixing in Si1−xGex/Si strained‐layer heterostructures using ion implantation Applied Physics Letters. 69: 993-995. DOI: 10.1063/1.117106 |
0.522 |
|
| 1996 |
Janz S, Akano UG, Mitchell IV. Nonlinear optical response of As+‐ion implanted GaAs studied using time resolved reflectivity Applied Physics Letters. 68: 3287-3289. DOI: 10.1063/1.116576 |
0.445 |
|
| 1996 |
Pan S, Mitchell IV. Effect of interaction between point defects and pre-existing dislocation loops on anomalous B diffusion in silicon Materials Chemistry and Physics. 46: 252-258. DOI: 10.1016/S0254-0584(96)01807-X |
0.448 |
|
| 1995 |
Simpson TW, Mitchell IV. Suppression of secondary defects in silicon by carbon implantation Mrs Proceedings. 396. DOI: 10.1557/Proc-396-847 |
0.501 |
|
| 1995 |
Goldberg RD, Mitchell IV, Charbonneau S, Poole P, Koteles ES, Aers G, Weatherly G. Ion Beam Assisted Quantum well Intermixing Mrs Proceedings. 396: 815. DOI: 10.1557/Proc-396-815 |
0.555 |
|
| 1995 |
Poole PJ, Charbonneau NS, Dion MM, Feng Y, He JJ, Koteles ES, Mitchell IV, Goldberg RD. Quantum well intermixing for the realization of photonic integrated circuits Proceedings of Spie. 2613: 9-16. DOI: 10.1117/12.228872 |
0.439 |
|
| 1995 |
Poole PJ, Charbonneau S, Aers GC, Jackman TE, Buchanan M, Dion M, Goldberg RD, Mitchell IV. Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing Journal of Applied Physics. 78: 2367-2371. DOI: 10.1063/1.360157 |
0.492 |
|
| 1995 |
Charbonneau S, Poole PJ, Piva PG, Aers GC, Koteles ES, Fallahi M, He J, McCaffrey JP, Buchanan M, Dion M, Goldberg RD, Mitchell IV. Quantum‐well intermixing for optoelectronic integration using high energy ion implantation Journal of Applied Physics. 78: 3697-3705. DOI: 10.1063/1.359948 |
0.505 |
|
| 1995 |
Yu N, Wen Q, Clarke DR, McIntyre PC, Kung H, Nastasi M, Simpson TW, Mitchell IV, Li D. Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates Journal of Applied Physics. 78: 5412-5421. DOI: 10.1063/1.359722 |
0.381 |
|
| 1995 |
Piva PG, Charbonneau S, Mitchell IV, Goldberg RD. Effect of implantation dose on photoluminescence decay times in intermixed GaAs/AlGaAs quantum wells Applied Physics Letters. 2252. DOI: 10.1063/1.115875 |
0.459 |
|
| 1995 |
Charbonneau S, Poole PJ, Feng Y, Aers GC, Dion M, Davies M, Goldberg RD, Mitchell IV. Band-gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation Applied Physics Letters. 67: 2954. DOI: 10.1063/1.114823 |
0.484 |
|
| 1995 |
Simpson TW, Goldberg RD, Mitchell IV. Suppression of dislocation formation in silicon by carbon implantation Applied Physics Letters. 67: 2857-2859. DOI: 10.1063/1.114808 |
0.527 |
|
| 1995 |
Yu N, Simpson TW, McIntyre PC, Nastasi M, Mitchell IV. Doping effects on the kinetics of solid‐phase epitaxial growth of amorphous alumina thin films on sapphire Applied Physics Letters. 67: 924-926. DOI: 10.1063/1.114696 |
0.329 |
|
| 1995 |
He JJ, Feng Y, Koteles ES, Poole PJ, Davis M, Dion M, Goldberg R, Mitchell I, Charbonneau S. Bandgap shifted InGaAsP/InP quantum well waveguides using MeV ion implantation Electronics Letters. 31: 2094-2095. DOI: 10.1049/El:19951415 |
0.517 |
|
| 1995 |
Charbonneau S, Poole PJ, Piva PG, Buchanan M, Goldberg RD, Mitchell IV. Bandgap tuning of semiconductor Quantum Well laser structures using high energy ion implantation Nuclear Inst. and Methods in Physics Research, B. 106: 457-460. DOI: 10.1016/0168-583X(95)00752-0 |
0.517 |
|
| 1995 |
Akano UG, Mitchell IV, Shepherd FR, Miner CJ. Ion implantation damage of InP and InGaAs Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 106: 308-312. DOI: 10.1016/0168-583X(95)00724-5 |
0.47 |
|
| 1995 |
Goldberg RD, Simpson TW, Mitchell IV, Simpson PJ, Prikryl M, Weatherly GC. Secondary defect formation in self-ion irradiated silicon Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 106: 216-221. DOI: 10.1016/0168-583X(95)00706-7 |
0.437 |
|
| 1995 |
Huang LJ, Lau WM, Mitchell IV, Tang HT, Lennard WN. Characterization of Si(100) sputtered with low energy argon Nuclear Inst. and Methods in Physics Research, B. 106: 34-37. DOI: 10.1016/0168-583X(95)00673-7 |
0.457 |
|
| 1995 |
Endisch D, Love D, Simpson TW, Mitchell IV, Baribeau J-. High depth resolution Rutherford scattering using forward angles Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 100: 159-164. DOI: 10.1016/0168-583X(95)00372-X |
0.325 |
|
| 1995 |
Huang MB, Huang LJ, Mitchell IV, Lennard WN, Lau WM, Nöel JP. Boron depth profiling in a δ-doped Si layer Nuclear Inst. and Methods in Physics Research, B. 100: 149-154. DOI: 10.1016/0168-583X(95)00263-4 |
0.378 |
|
| 1994 |
Huang LJ, Lau WM, Tang HT, Lennard WN, Mitchell IV, Schultz PJ, Kasrai M. Near-surface structure of low-energy-argon-bombarded Si(100). Physical Review. B, Condensed Matter. 50: 18453-18468. PMID 9976281 DOI: 10.1103/Physrevb.50.18453 |
0.335 |
|
| 1994 |
Simpson TW, Love D, Endisch E, Goldberg RD, Mitchell IV, Haynes TE, Baribeau JM. Amorphization threshold in Si-implanted strained SiGe alloy layers Mrs Proceedings. 373: 511. DOI: 10.2172/41378 |
0.404 |
|
| 1994 |
Simpson TW, Mitchell IV, McCallum JC, Boatner LA. Hydrogen Catalyzed Crystallization Of Strontium Titanate Journal of Applied Physics. 76: 2711-2718. DOI: 10.1063/1.357574 |
0.43 |
|
| 1994 |
Janz S, Buchanan M, Chatenoud F, McCaffrey JP, Normandin R, Akano UG, Mitchell IV. Modification of the second‐order optical susceptibility in AlxGa1−xAs by ion‐beam induced amorphization Applied Physics Letters. 65: 216-218. DOI: 10.1063/1.112677 |
0.46 |
|
| 1994 |
Tang HT, Lennard WN, Zinke-Allmang M, Mitchell IV, Feldman LC, Green ML, Brasen D. Nitrogen content of oxynitride films on Si(100) Applied Physics Letters. 64: 3473-3475. DOI: 10.1063/1.111948 |
0.38 |
|
| 1994 |
Allard LB, Aers GC, Piva PG, Poole PJ, Buchanan M, Templeton IM, Jackman TE, Charbonneau S, Akano U, Mitchell IV. Threshold dose for ion-induced intermixing in InGaAs/GaAs quantum wells Applied Physics Letters. 64: 2412-2414. DOI: 10.1063/1.111584 |
0.451 |
|
| 1994 |
McCallum JC, Simpson TW, Mitchell IV. Time resolved reflectivity measurements of the amorphous-to-gamma and gamma-to-alpha phase transitions in ion-implanted Al2O3 Nuclear Inst. and Methods in Physics Research, B. 91: 60-62. DOI: 10.1016/0168-583X(94)96190-5 |
0.344 |
|
| 1994 |
Lennard WN, Massoumi GR, Mitchell IV, Tang HT, Mitchell DF, Bardwell JA. Measurements of thin oxide films of SiO2/Si(100) Nuclear Inst. and Methods in Physics Research, B. 85: 42-46. DOI: 10.1016/0168-583X(94)95782-7 |
0.344 |
|
| 1994 |
Dygo A, Lennard WN, Mitchell IV, Smulders PJM. Random spectrum for the channeling-backscattering technique: A rotating axial-dip study Nuclear Inst. and Methods in Physics Research, B. 84: 23-30. DOI: 10.1016/0168-583X(94)95698-7 |
0.313 |
|
| 1994 |
Dygo A, Lennard WN, Mitchell IV, Smulders PJM. Azimuthally averaged backscattering yield near the 〈100〉 axis in Si Nuclear Inst. and Methods in Physics Research, B. 90: 161-165. DOI: 10.1016/0168-583X(94)95533-6 |
0.333 |
|
| 1994 |
Dygo A, Lennard WN, Mitchell IV. Close encounter processes in Monte Carlo simulations of ion channeling Nuclear Inst. and Methods in Physics Research, B. 90: 142-149. DOI: 10.1016/0168-583X(94)95530-1 |
0.424 |
|
| 1994 |
Erickson LE, Akano U, Mitchell I, Rowell N, Wang A. Photoluminescence spectra of trivalent praseodymium implanted in semi-insulating GaAs Journal of Luminescence. 60: 8-11. DOI: 10.1016/0022-2313(94)90081-7 |
0.458 |
|
| 1993 |
Zhang PX, Goldberg RD, Mitchell IV, Schultz PJ, Lockwood DJ. Details of the Defect Profile in Self-ion Implanted Silicon Mrs Proceedings. 316. DOI: 10.1557/Proc-316-87 |
0.434 |
|
| 1993 |
Goldberg RD, Simpson TW, Mitchell IV, PJS. Studies of Dislocation Formation in Annealed Self-Ion Irradiated Silicon Mrs Proceedings. 316. DOI: 10.1557/Proc-316-39 |
0.434 |
|
| 1993 |
Goldberg RD, Leung TC, Mitchell IV, Schultz PJ. Positron-Beam Observation of Dopant-Defect Complexes in Amorphized Silicon Mrs Proceedings. 297. DOI: 10.1557/Proc-297-1043 |
0.49 |
|
| 1993 |
Huang LJ, Kwok RWM, Lau WM, Tang HT, Lennard WN, Mitchell IV, Schultz PJ, Landheer D. Properties of ultrathin amorphous silicon nitride films on III-V semiconductors Materials Research Society Symposium Proceedings. 284: 595-600. DOI: 10.1557/Proc-284-595 |
0.329 |
|
| 1993 |
Lau WM, Bello I, Huang LJ, Feng X, Vos M, Mitchell IV. Argon incorporation in Si(100) by ion bombardment at 15-100 eV Journal of Applied Physics. 74: 7101-7106. DOI: 10.1063/1.355024 |
0.472 |
|
| 1993 |
Erickson LE, Akano U, Mitchell I, Rowell N, Wang A. Photoluminescence spectra of trivalent praseodymium implanted in semi‐insulating GaAs Journal of Applied Physics. 74: 2347-2353. DOI: 10.1063/1.354720 |
0.382 |
|
| 1993 |
Lau WM, Huang LJ, Chang WH, Vos M, Mitchell IV. Ultrashallow depth profiling using ozone oxidation and HF etching of silicon Applied Physics Letters. 63: 78-80. DOI: 10.1063/1.109702 |
0.322 |
|
| 1993 |
Huang LJ, Kwok RWM, Lau WM, Tang HT, Lennard WN, Mitchell IV, Schultz PJ. Stability of ultrathin silicon nitride films on Si(100) Applied Physics Letters. 62: 163-165. DOI: 10.1063/1.109358 |
0.339 |
|
| 1993 |
Akano UG, Mitchell IV, Shepherd FR. Influence of dose rate and temperature on the accumulation of Si-implantation damage in indium phosphide Applied Physics Letters. 62: 1670-1672. DOI: 10.1063/1.108621 |
0.45 |
|
| 1993 |
Lennard WN, Massoumi GR, Alkemade PFA, Mitchell IV, McIntyre NS, Davidson RD. Deuterium depth distribution investigations in Zr and ZrO2 Nuclear Inst. and Methods in Physics Research, B. 73: 203-213. DOI: 10.1016/0168-583X(93)95736-O |
0.381 |
|
| 1993 |
Simpson TW, Mitchell IV. Hydrogen assisted crystallisation of strontium titanate Nuclear Inst. and Methods in Physics Research, B. 80: 1178-1181. DOI: 10.1016/0168-583X(93)90760-4 |
0.413 |
|
| 1992 |
Huang LJ, Lau WM, Mitchell IV, Lee S-. Low Energy Fluoroboron Ion Beam Interaction with Silicon Single Crystals Mrs Proceedings. 279. DOI: 10.1557/Proc-279-625 |
0.512 |
|
| 1992 |
Schultz PJ, Simpson PJ, Akano UG, Mitchell IV. Evidence for Vacancy Clustering in Silicon Implanted Indium Phosphide Mrs Proceedings. 268. DOI: 10.1557/Proc-268-319 |
0.352 |
|
| 1992 |
Vos M, Wu C, Mitchell IV, Jackman TE, Baribeau JM, McCaffrey JP. Channeling studies of implantation damage in SiGe superlattices and SiGe alloys Nuclear Inst. and Methods in Physics Research, B. 66: 361-368. DOI: 10.1016/0168-583X(92)95998-7 |
0.338 |
|
| 1992 |
Vos M, Wu C, Mitchell IV, Smulders PJM. Channeling Of B-Ions In Silicon Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 67: 223-227. DOI: 10.1016/0168-583X(92)95806-3 |
0.436 |
|
| 1992 |
Vos M, Mitchell IV. A medium energy ion scattering study of Au/Pd(110) interface formation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 72: 447-451. DOI: 10.1016/0168-583X(92)95141-D |
0.359 |
|
| 1991 |
McCallum JC, Simpson TW, Mitchell IV, Rankin J, Boatner LA. Annealing of Pb-Implanted SrTiO 3 in The Presence of Water Vapour: A Study Using D 2 18 O Labelling Mrs Proceedings. 235: 419. DOI: 10.1557/Proc-235-419 |
0.318 |
|
| 1991 |
Akano UG, Mitchell IV, Shepherd FR. Room‐temperature annealing of Si implantation damage in InP Applied Physics Letters. 59: 2570-2572. DOI: 10.1063/1.105957 |
0.444 |
|
| 1991 |
Jackman TE, Charbonneau S, Allard LB, Williams RL, Templeton IM, Buchanan M, Vos M, Mitchell IV, Jackman JA. Compositional disordering of strained InGaAs/GaAs quantum wells by Au implantation: Channeling effects Applied Physics Letters. 59: 2733-2735. DOI: 10.1063/1.105899 |
0.484 |
|
| 1991 |
Vos M, Wu C, Mitchell IV, Jackman TE, Baribeau JM, McCaffrey J. Selective amorphization of ion-bombarded SiGe strained-layer superlattices Applied Physics Letters. 58: 951-953. DOI: 10.1063/1.104488 |
0.507 |
|
| 1991 |
Alkemade PFA, Lennard WN, Mitchell IV. The transport of keV energy electrons in Si studied by ion-induced Auger excitation in combination with channeling Surface Science. 248: 173-182. DOI: 10.1016/0167-2584(91)90352-R |
0.338 |
|
| 1990 |
Wong L, Alkemade PFA, Lennard WN, Mitchell IV. Ion-induced Auger electron studies on Al(110) Nuclear Inst. and Methods in Physics Research, B. 45: 637-640. DOI: 10.1016/0168-583X(90)90916-I |
0.322 |
|
| 1990 |
Alkemade PFA, Wong L, Lennard WN, Mitchell IV. Auger electron emission from a single crystal by impact of channeled ions Nuclear Inst. and Methods in Physics Research, B. 48: 604-607. DOI: 10.1016/0168-583X(90)90192-W |
0.384 |
|
| 1990 |
McIntyre NS, Weisener CG, Davidson RD, Lennard WN, Massoumi GR, Mitchell IV, Brennenstuhl A, Warr B. Analysis of zirconium. Niobium pressure tube surfaces for hydrogen using secondary ion mass spectrometry (SIMS) Surface and Interface Analysis. 15: 591-597. DOI: 10.1002/Sia.740151004 |
0.376 |
|
| 1989 |
Simpson PJ, Schultz PJ, Mitchell IV, Jackman TE, Aers GC. Defects in MBE-grown Silicon Epilayers Studied with Variable-Energy Positrons Mrs Proceedings. 163: 931. DOI: 10.1557/Proc-163-931 |
0.324 |
|
| 1989 |
Sandhu GS, Liu B, Parikh NR, Hunn JD, Swanson ML, Wichert T, Deicher M, Skudlik H, Lennard WN, Mitchell IV. Regrowth of Damaged Layers in Diamond Produced by Ion Implantation Mrs Proceedings. 162: 189. DOI: 10.1557/Proc-162-189 |
0.479 |
|
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