Year |
Citation |
Score |
2009 |
Zhang L, McCullen E, Rimai L, Naik R, Auner GW, Simon Ng KY. The sensing mechanism and the response simulation of the MIS hydrogen sensor Ieee Sensors Journal. 9: 1196-1201. DOI: 10.1109/Jsen.2009.2029450 |
0.411 |
|
2008 |
Rahman MH, Thakur JS, Rimai L, Perooly S, Naik R, Zhang L, Auner GW, Newaz G. Dual-mode operation of a Pd/AlN/SiC device for hydrogen sensing Sensors and Actuators, B: Chemical. 129: 35-39. DOI: 10.1016/J.Snb.2007.07.064 |
0.355 |
|
2007 |
Thakur JS, Prakasam HE, Zhang L, McCullen EF, Rimai L, García-Suárez VM, Naik R, Ng KYS, Auner GW. Characteristic jump in the electrical properties of a Pd/AlN/Si -based device on exposure to hydrogen Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.075308 |
0.419 |
|
2007 |
Zhang L, McCullen EF, Prakasam HE, Takur J, Naik R, Auner GW, Ng KYS. Response transients in a Pd-Ni/AlN/n-Si hydrogen sensor Sensors and Actuators, B: Chemical. 123: 277-282. DOI: 10.1016/J.Snb.2006.08.030 |
0.417 |
|
2006 |
Zhang L, McCullen EF, Rahman MH, Thakur JS, Rimai L, Baird RJ, Naik R, Newaz G, Auner GW, Ng KYS. Response to hydrogen of a metal/AlN/Si thin film structure: Effects of composition and structure of a combination Pd-Cr gate Sensors and Actuators, B: Chemical. 113: 843-851. DOI: 10.1016/J.Snb.2005.03.115 |
0.42 |
|
2005 |
Rahman MH, Zhang L, Rimai L, Baird RJ, Naik R, Ng KYS, Auner G, Newaz G. Effects of substrate materials on the electrical behavior of Pd/AlN/Semiconductor based Hydrogen sensors Materials Research Society Symposium Proceedings. 872: 383-387. DOI: 10.1557/Proc-872-J18.12 |
0.399 |
|
2005 |
Zhang L, Al-Homoudi I, Rahman MH, McCullen EF, Rimai L, Baird RJ, Naik R, Newaz G, Auner GW, Ng KS. Stabilized Pd-alloy/AlN/Si Hydrogen Sensors Mrs Proceedings. 872. DOI: 10.1557/Proc-872-J16.5 |
0.376 |
|
2005 |
Zhang L, Al-Homoudi IA, Rahman MH, McCullen EF, Rimai L, Baird RJ, Naik R, Newaz G, Auner GW, Ng KYS. Performance of a MIS type Pd-Cr/AlN/Si hydrogen sensor Materials Research Society Symposium Proceedings. 828: 223-227. DOI: 10.1557/Proc-828-A5.4 |
0.421 |
|
2004 |
Rimai L, Rahman MH, McCullen EF, Zhang L, Thakur JS, Naik R, Newaz GM, Ng KYS, Baird RJ, Auner GW. The Electrical Behavior of Pd/AIN/Semiconductor Thin Film Hydrogen Sensing Structures Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.8 |
0.404 |
|
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