| Year |
Citation |
Score |
| 2020 |
Le ST, Morris MA, Cardone A, Guros NB, Klauda JB, Sperling BA, Richter CA, Pant HC, Balijepalli A. Rapid, quantitative therapeutic screening for Alzheimer's enzymes enabled by optimal signal transduction with transistors. The Analyst. PMID 32159165 DOI: 10.1039/C9An01804B |
0.339 |
|
| 2020 |
Hagmann JA, Wang X, Kashid R, Namboodiri P, Wyrick J, Schmucker SW, Stewart MD, Silver RM, Richter CA. Electron-electron interactions in low-dimensional Si:P delta layers Physical Review B. 101. DOI: 10.1103/Physrevb.101.245419 |
0.301 |
|
| 2019 |
Zhang S, Le ST, Richter CA, Hacker CA. Improved contacts to p-type MoS transistors by charge-transfer doping and contact engineering. Applied Physics Letters. 115. PMID 32116333 DOI: 10.1063/1.5100154 |
0.397 |
|
| 2019 |
Le ST, Guros NB, Bruce RC, Cardone A, Amin ND, Zhang S, Klauda JB, Pant HC, Richter CA, Balijepalli A. Quantum capacitance-limited MoS biosensors enable remote label-free enzyme measurements. Nanoscale. PMID 31407757 DOI: 10.1039/C9Nr03171E |
0.348 |
|
| 2019 |
Guros NB, Le ST, Zhang S, Sperling BA, Klauda JB, Richter CA, Balijepalli A. Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing. Acs Applied Materials & Interfaces. PMID 30990006 DOI: 10.1021/Acsami.9B01486 |
0.39 |
|
| 2019 |
Jang HJ, Bittle EG, Zhang Q, Biacchi AJ, Richter CA, Gundlach DJ. Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors. Acs Nano. PMID 30608649 DOI: 10.1021/Acsnano.8B07625 |
0.32 |
|
| 2019 |
Ramanayaka AN, Tang K, Hagmann JA, Kim H, Simons DS, Richter CA, Pomeroy JM. Use of quantum effects as potential qualifying metrics for “quantum grade silicon” Aip Advances. 9: 125153. DOI: 10.1063/1.5128098 |
0.404 |
|
| 2019 |
Zhu H, Richter CA, Yu S, Ye H, Zeng M, Li Q. Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors Applied Physics Letters. 115: 073107. DOI: 10.1063/1.5111180 |
0.343 |
|
| 2019 |
Jiang K, Pookpanratana SJ, Ren T, Natoli SN, Sperling BA, Robertson J, Richter CA, Yu S, Li Q. Nonvolatile memory based on redox-active ruthenium molecular monolayers Applied Physics Letters. 115: 162102. DOI: 10.1063/1.5108675 |
0.329 |
|
| 2019 |
Wyrick J, Wang X, Kashid RV, Namboodiri P, Schmucker SW, Hagmann JA, Liu K, Stewart MD, Richter CA, Bryant GW, Silver RM. Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices Advanced Functional Materials. 29: 1903475. DOI: 10.1002/Adfm.201903475 |
0.354 |
|
| 2018 |
Zhang S, Hill HM, Moudgil K, Richter CA, Hight Walker AR, Barlow S, Marder SR, Hacker CA, Pookpanratana SJ. Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides. Advanced Materials (Deerfield Beach, Fla.). e1802991. PMID 30059169 DOI: 10.1002/Adma.201802991 |
0.366 |
|
| 2017 |
Diemer PJ, Hayes J, Welchman E, Hallani R, Pookpanratana SJ, Hacker CA, Richter CA, Anthony JE, Thonhauser T, Jurchescu OD. The influence of isomer purity on trap states and performance of organic thin-film transistors. Advanced Functional Materials. 3. PMID 29230154 DOI: 10.1002/Aelm.201600294 |
0.389 |
|
| 2017 |
Hajzus JR, Biacchi AJ, Le ST, Richter CA, Hight Walker AR, Porter LM. Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function. Nanoscale. PMID 29214263 DOI: 10.1039/C7Nr07403D |
0.304 |
|
| 2017 |
Rigosi AF, Liu CI, Glavin NR, Yang Y, Hill HM, Hu J, Hight Walker AR, Richter CA, Elmquist RE, Newell DB. Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation. Acs Omega. 2: 2326-2332. PMID 28828410 DOI: 10.1021/acsomega.7b00341 |
0.306 |
|
| 2017 |
Rigosi AF, Glavin NR, Liu CI, Yang Y, Obrzut J, Hill HM, Hu J, Lee HY, Hight Walker AR, Richter CA, Elmquist RE, Newell DB. Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations. Small (Weinheim An Der Bergstrasse, Germany). PMID 28544485 DOI: 10.1002/Smll.201700452 |
0.349 |
|
| 2017 |
Smets Q, Verhulst AS, Simoen E, Gundlach D, Richter C, Collaert N, Heyns MM. Calibration of Bulk Trap-Assisted Tunneling and Shockley–Read–Hall Currents and Impact on InGaAs Tunnel-FETs Ieee Transactions On Electron Devices. 64: 3622-3626. DOI: 10.1109/Ted.2017.2724144 |
0.355 |
|
| 2017 |
Smets Q, Verhulst A, Kim J, Campbell JP, Nminibapiel D, Veksler D, Shrestha P, Pandey R, Simoen E, Gundlach D, Richter C, Cheung KP, Datta S, Mocuta A, Collaert N, et al. Pulsed I-V on TFETs: Modeling and Measurements Ieee Transactions On Electron Devices. 64: 1489-1497. DOI: 10.1109/Ted.2017.2670660 |
0.302 |
|
| 2017 |
Diemer PJ, Hayes J, Welchman E, Hallani R, Pookpanratana SJ, Hacker CA, Richter CA, Anthony JE, Thonhauser T, Jurchescu OD. Organic Electronics: The Influence of Isomer Purity on Trap States and Performance of Organic Thin-Film Transistors (Adv. Electron. Mater. 1/2017) Advanced Electronic Materials. 3. DOI: 10.1002/Aelm.201770005 |
0.308 |
|
| 2016 |
Goetz KP, Tsutsumi J, Pookpanratana S, Chen J, Corbin NS, Behera RK, Coropceanu V, Richter CA, Hacker CA, Hasegawa T, Jurchescu OD. Polymorphism in the 1:1 Charge-Transfer Complex DBTTF-TCNQ and Its Effects on Optical and Electronic Properties. Advanced Electronic Materials. 2. PMID 29387522 DOI: 10.1002/Aelm.201600203 |
0.31 |
|
| 2016 |
Pookpanratana S, Zhu H, Bittle EG, Natoli SN, Ren T, Richter CA, Li Q, Hacker CA. Non-volatile memory devices with redox-active diruthenium molecular compound. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 094009. PMID 26871549 DOI: 10.1088/0953-8984/28/9/094009 |
0.372 |
|
| 2016 |
Hagmann JA, Le ST, Richter CA, Seiler DG. Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials. Journal of Visualized Experiments : Jove. e53506. PMID 26863449 DOI: 10.3791/53506 |
0.361 |
|
| 2016 |
Smets Q, Verhulst AS, El Kazzi S, Gundlach D, Richter CA, Mocuta A, Collaert N, Thean AVY, Heyns MM. Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2604860 |
0.342 |
|
| 2016 |
Yuan H, Cheng G, Yu S, Hight Walker AR, Richter CA, Pan M, Li Q. Field effects of current crowding in metal-MoS2 contacts Applied Physics Letters. 108. DOI: 10.1063/1.4942409 |
0.368 |
|
| 2015 |
Zhu H, Pookpanratana SJ, Bonevich J, Natoli SN, Hacker CA, Ren T, Suehle J, Richter CA, Li Q. Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Non-Volatile Memory Applications. Acs Applied Materials & Interfaces. PMID 26600234 DOI: 10.1021/Acsami.5B08517 |
0.327 |
|
| 2015 |
Yuan H, Cheng G, You L, Li H, Zhu H, Li W, Kopanski JJ, Obeng YS, Hight Walker AR, Gundlach DJ, Richter CA, Ioannou DE, Li Q. Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts. Acs Applied Materials & Interfaces. 7: 1180-7. PMID 25514512 DOI: 10.1021/Am506921Y |
0.355 |
|
| 2014 |
Pookpanratana S, Savchenko I, Natoli SN, Cummings SP, Richter LJ, Robertson JW, Richter CA, Ren T, Hacker CA. Attachment of a diruthenium compound to Au and SiO2/Si surfaces by "click" chemistry. Langmuir : the Acs Journal of Surfaces and Colloids. 30: 10280-9. PMID 25110126 DOI: 10.1021/La501670C |
0.378 |
|
| 2014 |
Jang HJ, Pookpanratana SJ, Brigeman AN, Kline RJ, Basham JI, Gundlach DJ, Hacker CA, Kirillov OA, Jurchescu OD, Richter CA. Interface engineering to control magnetic field effects of organic-based devices by using a molecular self-assembled monolayer. Acs Nano. 8: 7192-201. PMID 24968019 DOI: 10.1021/Nn502199Z |
0.371 |
|
| 2014 |
Li Q, Xiong HD, Liang X, Zhu X, Gu D, Ioannou DE, Baumgart H, Richter CA. Self-assembled nanowire array capacitors: capacitance and interface state profile. Nanotechnology. 25: 135201. PMID 24584362 DOI: 10.1088/0957-4484/25/13/135201 |
0.403 |
|
| 2014 |
Zhang Q, Lu Y, Richter CA, Jena D, Seabaugh A. Optimum bandgap and supply voltage in tunnel FETs Ieee Transactions On Electron Devices. 61: 2719-2724. DOI: 10.1109/Ted.2014.2330805 |
0.376 |
|
| 2014 |
Li W, Birdwell AG, Amani M, Burke RA, Ling X, Lee YH, Liang X, Peng L, Richter CA, Kong J, Gundlach DJ, Nguyen NV. Broadband optical properties of large-area monolayer CVD molybdenum disulfide Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.195434 |
0.354 |
|
| 2014 |
Yuan H, Zhang K, Li H, Zhu H, Bonevich JE, Baumgart H, Richter CA, Li Q. Polarization of Bi2Te3 thin film in a floating-gate capacitor structure Applied Physics Letters. 105. DOI: 10.1063/1.4904003 |
0.382 |
|
| 2014 |
Li W, Zhang Q, Bijesh R, Kirillov OA, Liang Y, Levin I, Peng LM, Richter CA, Liang X, Datta S, Gundlach DJ, Nguyen NV. Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions Applied Physics Letters. 105. DOI: 10.1063/1.4902418 |
0.359 |
|
| 2014 |
Yuan H, Badwan A, Richter CA, Zhu H, Kirillov O, Ioannou DE, Li Q. Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts Applied Physics Letters. 105. DOI: 10.1063/1.4897008 |
0.393 |
|
| 2014 |
Li H, Zhu H, Yuan H, You L, Richter CA, Kopanski JJ, Zhao E, Li Q. SnTe field effect transistors and the anomalous electrical response of structural phase transition Applied Physics Letters. 105. DOI: 10.1063/1.4887055 |
0.36 |
|
| 2014 |
Zhu H, Bonevich JE, Li H, Richter CA, Yuan H, Kirillov O, Li Q. Discrete charge states in nanowire flash memory with multiple Ta 2O5 charge-trapping stacks Applied Physics Letters. 104. DOI: 10.1063/1.4883717 |
0.325 |
|
| 2014 |
Li W, Hacker CA, Cheng G, Liang Y, Tian B, Hight Walker AR, Richter CA, Gundlach DJ, Liang X, Peng L. Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment Journal of Applied Physics. 115. DOI: 10.1063/1.4868897 |
0.345 |
|
| 2014 |
Cheng G, Calizo I, Liang X, Sperling BA, Johnston-Peck AC, Li W, Maslar JE, Richter CA, Walker ARH. Carbon scrolls from chemical vapor deposition grown graphene Carbon. 76: 257-265. DOI: 10.1016/J.Carbon.2014.04.076 |
0.315 |
|
| 2013 |
Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/Nl303669W |
0.337 |
|
| 2013 |
Zhu H, Yuan H, Li H, Richter CA, Kirillov O, Ioannou DE, Li Q. Design and fabrication of Ta2O5 stacks for discrete multibit memory application Ieee Transactions On Nanotechnology. 12: 1151-1157. DOI: 10.1109/Tnano.2013.2281817 |
0.343 |
|
| 2013 |
Zhu H, Hacker CA, Pookpanratana SJ, Richter CA, Yuan H, Li H, Kirillov O, Ioannou DE, Li Q. Non-volatile memory with self-assembled ferrocene charge trapping layer Applied Physics Letters. 103. DOI: 10.1063/1.4817009 |
0.394 |
|
| 2013 |
Li W, Liang Y, Yu D, Peng L, Pernstich KP, Shen T, Hight Walker AR, Cheng G, Hacker CA, Richter CA, Li Q, Gundlach DJ, Liang X. Ultraviolet/ozone treatment to reduce metal-graphene contact resistance Applied Physics Letters. 102. DOI: 10.1063/1.4804643 |
0.349 |
|
| 2013 |
Zhu H, Richter CA, Zhao E, Bonevich JE, Kimes WA, Jang HJ, Yuan H, Li H, Arab A, Kirillov O, Maslar JE, Ioannou DE, Li Q. Topological insulator Bi2Se3 nanowire high performance field-effect transistors Scientific Reports. 3. DOI: 10.1038/Srep01757 |
0.427 |
|
| 2012 |
Tedesco JL, Stephey L, Hernández-Mora M, Richter CA, Gergel-Hackett N. Switching mechanisms in flexible solution-processed TiO₂ memristors. Nanotechnology. 23: 305206. PMID 22780990 DOI: 10.1088/0957-4484/23/30/305206 |
0.378 |
|
| 2012 |
Jang HJ, Pernstich KP, Gundlach DJ, Jurchescu OD, Richter CA. Observation of spin-polarized electron transport in Alq3 by using a low work function metal Applied Physics Letters. 101. DOI: 10.1063/1.4751257 |
0.34 |
|
| 2012 |
Yan R, Zhang Q, Li W, Calizo I, Shen T, Richter CA, Hight-Walker AR, Liang X, Seabaugh A, Jena D, Grace Xing H, Gundlach DJ, Nguyen NV. Determination of graphene work function and graphene-insulator- semiconductor band alignment by internal photoemission spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4734955 |
0.354 |
|
| 2012 |
Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Sio H, Kirillov OA, Richter CA, Nguyen NV. Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.3692589 |
0.317 |
|
| 2012 |
Jang HJ, Kirillov OA, Jurchescu OD, Richter CA. Spin transport in memristive devices Applied Physics Letters. 100. DOI: 10.1063/1.3679114 |
0.348 |
|
| 2012 |
Zhu H, Li Q, Yuan H, Baumgart H, Ioannou DE, Richter CA. Self-aligned multi-channel silicon nanowire field-effect transistors Solid-State Electronics. 78: 92-96. DOI: 10.1016/J.Sse.2012.05.058 |
0.405 |
|
| 2011 |
Liang X, Sperling BA, Calizo I, Cheng G, Hacker CA, Zhang Q, Obeng Y, Yan K, Peng H, Li Q, Zhu X, Yuan H, Walker AR, Liu Z, Peng LM, ... Richter CA, et al. Toward clean and crackless transfer of graphene. Acs Nano. 5: 9144-53. PMID 21999646 DOI: 10.1021/Nn203377T |
0.345 |
|
| 2011 |
Zhu X, Li Q, Ioannou DE, Gu D, Bonevich JE, Baumgart H, Suehle JS, Richter CA. Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells. Nanotechnology. 22: 254020. PMID 21572210 DOI: 10.1088/0957-4484/22/25/254020 |
0.361 |
|
| 2011 |
Shen T, Wu W, Yu Q, Richter CA, Elmquist R, Newell D, Chen YP. Quantum Hall effect on centimeter scale chemical vapor deposited graphene films Applied Physics Letters. 99. DOI: 10.1063/1.3663972 |
0.342 |
|
| 2011 |
Coll M, Goetz KP, Conrad BR, Hacker CA, Gundlach DJ, Richter CA, Jurchescu OD. Flip chip lamination to electrically contact organic single crystals on flexible substrates Applied Physics Letters. 98. DOI: 10.1063/1.3580610 |
0.374 |
|
| 2011 |
Coll M, Gergel-Hackett N, Richter CA, Hacker CA. Structural and electrical properties of flip chip laminated metal-molecule-silicon structures varying molecular backbone and atomic tether Journal of Physical Chemistry C. 115: 24353-24365. DOI: 10.1021/Jp208275C |
0.359 |
|
| 2010 |
Teague LC, Jurchescu OD, Richter CA, Subramanian S, Anthony JE, Jackson TN, Gundlach DJ, Kushmerick JG. Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy Applied Physics Letters. 96. DOI: 10.1063/1.3389493 |
0.306 |
|
| 2010 |
Gergel-Hackett N, Aguilar I, Richter CA. Engineering the electron transport of silicon-based molecular electronic devices via molecular dipoles Journal of Physical Chemistry C. 114: 21708-21714. DOI: 10.1021/Jp106009K |
0.384 |
|
| 2009 |
Li Q, Zhu X, Yang Y, Ioannou DE, Xiong HD, Kwon DW, Suehle JS, Richter CA. The large-scale integration of high-performance silicon nanowire field effect transistors. Nanotechnology. 20: 415202. PMID 19755723 DOI: 10.1088/0957-4484/20/41/415202 |
0.395 |
|
| 2009 |
Coll M, Miller LH, Richter LJ, Hines DR, Jurchescu OD, Gergel-Hackett N, Richter CA, Hacker CA. Formation of silicon-based molecular electronic structures using flip-chip lamination. Journal of the American Chemical Society. 131: 12451-7. PMID 19670858 DOI: 10.1021/Ja901646J |
0.381 |
|
| 2009 |
Xiong HD, Wang W, Suehle JS, Richter CA, Hong WK, Lee T. Noise in ZnO nanowire field effect transistors. Journal of Nanoscience and Nanotechnology. 9: 1041-4. PMID 19441450 DOI: 10.1166/Jnn.2009.C082 |
0.342 |
|
| 2009 |
Wang W, Richter CA. Magnetic tunnel junctions with self-assembled molecules. Journal of Nanoscience and Nanotechnology. 9: 1008-10. PMID 19441442 DOI: 10.1166/Jnn.2009.C074 |
0.348 |
|
| 2009 |
Gergel-Hackett N, Hamadani B, Dunlap B, Suehle J, Richter C, Hacker C, Gundlach D. A flexible solution-processed memristor Ieee Electron Device Letters. 30: 706-708. DOI: 10.1109/Led.2009.2021418 |
0.353 |
|
| 2009 |
Zhu X, Gu D, Li Q, Ioannou DE, Baumgart H, Suehle JS, Richter CA. Silicon nanowire NVM with high-k gate dielectric stack Microelectronic Engineering. 86: 1957-1960. DOI: 10.1016/J.Mee.2009.03.095 |
0.353 |
|
| 2008 |
Yu LH, Gergel-Hackett N, Zangmeister CD, Hacker CA, Richter CA, Kushmerick JG. Molecule-induced interface states dominate charge transport in Si-alkyl-metal junctions. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 374114. PMID 21694421 DOI: 10.1088/0953-8984/20/37/374114 |
0.361 |
|
| 2008 |
Gergel-Hackett N, Zangmeister CD, Hacker CA, Richter LJ, Richter CA. Demonstration of molecular assembly on Si (100) for CMOS-compatible molecule-based electronic devices. Journal of the American Chemical Society. 130: 4259-61. PMID 18324818 DOI: 10.1021/Ja800378B |
0.412 |
|
| 2008 |
Gundlach DJ, Royer JE, Park SK, Subramanian S, Jurchescu OD, Hamadani BH, Moad AJ, Kline RJ, Teague LC, Kirillov O, Richter CA, Kushmerick JG, Richter LJ, Parkin SR, Jackson TN, et al. Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits. Nature Materials. 7: 216-21. PMID 18278050 DOI: 10.1038/Nmat2122 |
0.403 |
|
| 2008 |
Wang W, Scott A, Gergel-Hackett N, Hacker CA, Janes DB, Richter CA. Probing molecules in integrated silicon-molecule-metal junctions by inelastic tunneling spectroscopy. Nano Letters. 8: 478-84. PMID 18189437 DOI: 10.1021/Nl0725289 |
0.401 |
|
| 2008 |
Choi C, Cho W, Koo S, Kim S, Li Q, Suehle JS, Richter CA, Vogel EM. Three-Dimensional Simulation Study of the Improved On/Off Current Ratio in Silicon Nanowire Field-Effect Transistors Journal of the Korean Physical Society. 53: 1680-1684. DOI: 10.3938/Jkps.53.1680 |
0.332 |
|
| 2008 |
Richter CA, Xiong HD, Zhu X, Wang W, Stanford VM, Hong WK, Lee T, Ioannou DE, Li Q. Metrology for the electrical characterization of semiconductor nanowires Ieee Transactions On Electron Devices. 55: 3086-3095. DOI: 10.1109/Ted.2008.2005394 |
0.406 |
|
| 2008 |
Hamadani BH, Richter CA, Suehle JS, Gundlach DJ. Insights into the characterization of polymer-based organic thin-film transistors using capacitance-voltage analysis Applied Physics Letters. 92. DOI: 10.1063/1.2917523 |
0.363 |
|
| 2008 |
Zhu X, Yang Y, Li Q, Ioannou DE, Suehle JS, Richter CA. Silicon nanowire NVM cell using high-k dielectric charge storage layer Microelectronic Engineering. 85: 2403-2405. DOI: 10.1016/J.Mee.2008.09.013 |
0.385 |
|
| 2007 |
Li Q, Koo S, Edelstein MD, Suehle JS, Richter CA. Silicon Nanowire Electromechanical Switch for Logic Device Application Mrs Proceedings. 1018. DOI: 10.1557/Proc-1018-Ee09-07 |
0.382 |
|
| 2007 |
Li Q, Koo SM, Richter CA, Edelstein MD, Bonevich JE, Kopanski JJ, Suehle JS, Vogel EM. Precise alignment of single nanowires and fabrication of nanoelectromechanical switch and other test structures Ieee Transactions On Nanotechnology. 6: 256-261. DOI: 10.1109/Tnano.2007.891827 |
0.38 |
|
| 2007 |
Li Q, Koo SM, Edelstein MD, Suehle JS, Richter CA. Silicon nanowire electromechanical switches for logic device application Nanotechnology. 18. DOI: 10.1088/0957-4484/18/31/315202 |
0.382 |
|
| 2007 |
Li Q, Zhu X, Xiong HD, Koo SM, Ioannou DE, Kopanski JJ, Suehle JS, Richter CA. Silicon nanowire on oxide/nitride/oxide for memory application Nanotechnology. 18. DOI: 10.1088/0957-4484/18/23/235204 |
0.402 |
|
| 2007 |
Hamadani BH, Richter CA, Gundlach DJ, Kline RJ, McCulloch I, Heeney M. Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors Journal of Applied Physics. 102. DOI: 10.1063/1.2769782 |
0.384 |
|
| 2007 |
Xiong HD, Wang W, Li Q, Richter CA, Suehle JS, Hong WK, Lee T, Fleetwood DM. Random telegraph signals in n -type ZnO nanowire field effect transistors at low temperature Applied Physics Letters. 91. DOI: 10.1063/1.2761254 |
0.35 |
|
| 2007 |
Wang W, Xiong HD, Edelstein MD, Gundlach D, Suehle JS, Richter CA, Hong WK, Lee T. Low frequency noise characterizations of ZnO nanowire field effect transistors Journal of Applied Physics. 101. DOI: 10.1063/1.2496007 |
0.333 |
|
| 2007 |
Hacker CA, Richter CA, Gergel-Hackett N, Richter LJ. Origin of differing reactivities of aliphatic chains on H-Si(111) and oxide surfaces with metal Journal of Physical Chemistry C. 111: 9384-9392. DOI: 10.1021/Jp072216U |
0.355 |
|
| 2007 |
Xiong H, Heh D, Gurfinkel M, Li Q, Shapira Y, Richter C, Bersuker G, Choi R, Suehle J. Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements Microelectronic Engineering. 84: 2230-2234. DOI: 10.1016/J.Mee.2007.04.094 |
0.304 |
|
| 2007 |
Teague LC, Banerjee S, Wong SS, Richter CA, Varughese B, Batteas JD. Effects of ozonolysis and subsequent growth of quantum dots on the electrical properties of freestanding single-walled carbon nanotube films Chemical Physics Letters. 442: 354-359. DOI: 10.1016/J.Cplett.2007.05.097 |
0.338 |
|
| 2006 |
Ehrstein J, Richter C, Chandler-Horowitz D, Vogel E, Young C, Shah S, Maher D, Foran B, Hung PY, Diebold A. A Comparison of Thickness Values for Very Thin SiO[sub 2] Films by Using Ellipsometric, Capacitance-Voltage, and HRTEM Measurements Journal of the Electrochemical Society. 153: F12. DOI: 10.1149/1.2133710 |
0.366 |
|
| 2006 |
Wang W, Richter CA. Spin-polarized inelastic electron tunneling spectroscopy of a molecular magnetic tunnel junction Applied Physics Letters. 89. DOI: 10.1063/1.2360908 |
0.344 |
|
| 2005 |
Richter CA, Hacker CA, Richter LJ. Electrical and spectroscopic characterization of metal/monolayer/Si devices. The Journal of Physical Chemistry. B. 109: 21836-41. PMID 16853836 DOI: 10.1021/Jp053561R |
0.367 |
|
| 2005 |
Koo SM, Li Q, Edelstein MD, Richter CA, Vogel EM. Enhanced channel modulation in dual-gated silicon nanowire transistors. Nano Letters. 5: 2519-23. PMID 16351207 DOI: 10.1021/Nl051855I |
0.375 |
|
| 2005 |
DeLongchamp DM, Vogt BD, Brooks CM, Kano K, Obrzut J, Richter CA, Kirillov OA, Lin EK. Influence of a water rinse on the structure and properties of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 11480-3. PMID 16285829 DOI: 10.1021/La051403L |
0.329 |
|
| 2005 |
Hacker CA, Anderson KA, Richter LJ, Richter CA. Comparison of Si-O-C interfacial bonding of alcohols and aldehydes on Si(111) formed from dilute solution with ultraviolet irradiation. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 882-9. PMID 15667163 DOI: 10.1021/La048841X |
0.306 |
|
| 2005 |
Koo SM, Edelstein MD, Li Q, Richter CA, Vogel EM. Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors Nanotechnology. 16: 1482-1485. DOI: 10.1088/0957-4484/16/9/011 |
0.38 |
|
| 2005 |
Ramachandran GK, Edelstein MD, Blackburn DL, Suehle JS, Vogel EM, Richter CA. Nanometre gaps in gold wires are formed by thermal migration Nanotechnology. 16: 1294-1299. DOI: 10.1088/0957-4484/16/8/052 |
0.321 |
|
| 2005 |
Hacker CA, Richter CA, Richter LJ. IR spectroscopic characterization of the buried metal interface of metal-molecule-silicon vertical diodes Aip Conference Proceedings. 788: 610-614. DOI: 10.1063/1.2063027 |
0.336 |
|
| 2005 |
Han JP, Koo SM, Vogel EM, Gusev EP, D'Emic C, Richter CA, Suehle JS. Reverse short channel effects in high-k gated nMOSFETs Microelectronics Reliability. 45: 783-785. DOI: 10.1016/J.Microrel.2004.11.049 |
0.302 |
|
| 2004 |
Hacker CA, Batteas JD, Garno JC, Marquez M, Richter CA, Richter LJ, van Zee RD, Zangmeister CD. Structural and chemical characterization of monofluoro-substituted oligo(phenylene-ethynylene) thiolate self-assembled monolayers on gold. Langmuir : the Acs Journal of Surfaces and Colloids. 20: 6195-205. PMID 15248703 DOI: 10.1021/La036445T |
0.323 |
|
| 2004 |
Han JP, Vogel EM, Gusev EP, D'Emic C, Richter CA, Heh DW, Suehle JS. Asymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs with HfO2 Gate Dielectric on Ultrathin SiON Buffer Layer Ieee Electron Device Letters. 25: 126-128. DOI: 10.1109/Led.2004.824247 |
0.369 |
|
| 2004 |
Han JP, Koo SM, Richter CA, Vogel EM. Influence of buffer layer thickness on memory effects of SrBi 2Ta 2O 9/SiN/Si structures Applied Physics Letters. 85: 1439-1441. DOI: 10.1063/1.1771458 |
0.306 |
|
| 2004 |
Koo SM, Fujiwara A, Han JP, Vogel EM, Richter CA, Bonevich JE. High inversion current in silicon nanowire field effect transistors Nano Letters. 4: 2197-2201. DOI: 10.1021/Nl0486517 |
0.395 |
|
| 2004 |
Richter CA, Hacker CA, Richter LJ, Vogel EM. Molecular devices formed by direct monolayer attachment to silicon Solid-State Electronics. 48: 1747-1752. DOI: 10.1016/J.Sse.2004.05.009 |
0.41 |
|
| 2004 |
Jach T, Dura JA, Nguyen NV, Swider J, Cappello G, Richter C. Comparative thickness measurements of SiO2/Si films for thicknesses less than 10 nm Surface and Interface Analysis. 36: 23-29. DOI: 10.1002/Sia.1641 |
0.312 |
|
| 2003 |
Ehrstein JR, Richter CA, Chandler-Horowitz D, Vogel EM, Ricks DR, Young C, Spencer S, Shah S, Maher D, Foran BC, Diebold AC, Hung P. Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance‐Voltage and HRTEM Measurements Characterization and Metrology For Ulsi Technology. 683: 331-336. DOI: 10.1063/1.1622491 |
0.356 |
|
| 2003 |
Vogel EM, Richter CA, Rennex BG. A capacitance-voltage model for polysilicon-gated MOS devices including substrate quantization effects based on modification of the total semiconductor charge Solid-State Electronics. 47: 1589-1596. DOI: 10.1016/S0038-1101(03)00099-6 |
0.366 |
|
| 2002 |
Cho YJ, Nguyen NV, Richter CA, Ehrstein JR, Lee BH, Lee JC. Spectroscopic ellipsometry characterization of high-k dielectric HfO 2 thin films and the high-temperature annealing effects on their optical properties Applied Physics Letters. 80: 1249-1251. DOI: 10.1063/1.1448384 |
0.312 |
|
| 2001 |
Chism W, Diebold A, Canterbury J, Richter C. Characterization and production metrology of thin transistor gate dielectric films Solid State Phenomena. 76: 177-180. DOI: 10.4028/Www.Scientific.Net/Ssp.76-77.177 |
0.319 |
|
| 2001 |
Richter CA, Hefner AR, Vogel EM. Comparison of quantum-mechanical capacitance-voltage simulators Ieee Electron Device Letters. 22: 35-37. DOI: 10.1109/55.892436 |
0.38 |
|
| 2001 |
Richter CA, Nguyen NV, Gusev E, Zabel TH, Alers GA. Optical and electrical thickness measurements of alternate gate dielectrics: A fundamental difference Characterization and Metrology For Ulsi Technology. 550: 134-139. DOI: 10.1063/1.1354385 |
0.32 |
|
| 2001 |
Diebold AC, Canterbury J, Chism W, Richter C, Nguyen N, Ehrstein J, Weintraub C. Characterization and production metrology of gate dielectric films Materials Science in Semiconductor Processing. 4: 3-8. DOI: 10.1016/S1369-8001(00)00153-0 |
0.32 |
|
| 2000 |
Vogel EM, Kirklen Henson W, Richter CA, Suehle JS. Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics Ieee Transactions On Electron Devices. 47: 601-608. DOI: 10.1109/16.824736 |
0.342 |
|
| 2000 |
Nguyen NV, Richter CA, Cho YJ, Alers GA, Stirling LA. Effects of high-temperature annealing on the dielectric function of Ta2O5 films observed by spectroscopic ellipsometry Applied Physics Letters. 77: 3012-3014. DOI: 10.1063/1.1324730 |
0.321 |
|
| 1998 |
Richter CA, Nguyen NV, Dura JA, Majkrzak CF. Characterization of thin SiO2 on Si by spectroscopic ellipsometry, neutron reflectometry, and x-ray reflectometry Characterization and Metrology For Ulsi Technology. 449: 185-189. DOI: 10.1063/1.56796 |
0.322 |
|
| 1998 |
Dura JA, Richter CA, Majkrzak CF, Nguyen NV. Neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry characterization of thin SiO2 on Si Applied Physics Letters. 73: 2131-2133. DOI: 10.1063/1.122442 |
0.362 |
|
| 1996 |
Dura JA, Pellegrino JG, Richter CA. X-ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices Applied Physics Letters. 69: 1134-1136. DOI: 10.1063/1.117082 |
0.376 |
|
| 1995 |
Pellegrino JG, Richter CA, Dura JA, Amirtharaj PM, Qadri SB, Roughani B. Buffer layer-modulation-doped field-effect-transistor interactions in the Al 0.33Ga 0.67As/GaAs superlattice system Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 787-791. DOI: 10.1116/1.579828 |
0.325 |
|
| 1990 |
McEuen PL, Szafer A, Richter CA, Alphenaar BW, Jain JK, Stone AD, Wheeler RG, Sacks RN. New resistivity for high-mobility quantum Hall conductors. Physical Review Letters. 64: 2062-2065. PMID 10041567 DOI: 10.1103/PhysRevLett.64.2062 |
0.61 |
|
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