Benjamin N. Bryant, Ph.D. - Publications
Affiliations: | 2013 | Materials | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Materials Science EngineeringYear | Citation | Score | |||
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2013 | Bryant BN, Young EC, Wu F, Fujito K, Nakamura S, Speck JS. Basal plane stacking fault suppression by nitrogen carrier gas in m-plane GaN regrowth by hydride vapor phase epitaxy Applied Physics Express. 6. DOI: 10.7567/Apex.6.115502 | 0.583 | |||
2011 | Bryant BN, Kamber DS, Wu F, Nakamura S, Speck JS. Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1463-1466. DOI: 10.1002/Pssc.201000908 | 0.502 | |||
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