Year |
Citation |
Score |
2019 |
Dev S, Wang Y, Kim K, Zamiri M, Kadlec C, Goldflam M, Hawkins S, Shaner E, Kim J, Krishna S, Allen M, Allen J, Tutuc E, Wasserman D. Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits. Nature Communications. 10: 1625. PMID 30967546 DOI: 10.1038/S41467-019-09602-2 |
0.576 |
|
2019 |
Tran K, Moody G, Wu F, Lu X, Choi J, Kim K, Rai A, Sanchez DA, Quan J, Singh A, Embley J, Zepeda A, Campbell M, Autry T, Taniguchi T, et al. Evidence for moiré excitons in van der Waals heterostructures. Nature. PMID 30804527 DOI: 10.1038/S41586-019-0975-Z |
0.649 |
|
2019 |
Zhang L, Gogna R, Burg GW, Horng J, Paik E, Chou YH, Kim K, Tutuc E, Deng H. Highly valley-polarized singlet and triplet interlayer excitons in van der Waals heterostructure Physical Review B. 100: 41402. DOI: 10.1103/Physrevb.100.041402 |
0.611 |
|
2018 |
Kim K, Prasad N, Movva HCP, Burg GW, Wang Y, Larentis S, Taniguchi T, Watanabe K, Register LF, Tutuc E. Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures. Nano Letters. PMID 30105907 DOI: 10.1021/Acs.Nanolett.8B02770 |
0.79 |
|
2018 |
Huang S, Kim K, Efimkin DK, Lovorn T, Taniguchi T, Watanabe K, MacDonald AH, Tutuc E, LeRoy BJ. Topologically Protected Helical States in Minimally Twisted Bilayer Graphene. Physical Review Letters. 121: 037702. PMID 30085814 DOI: 10.1103/Physrevlett.121.037702 |
0.602 |
|
2018 |
Burg GW, Prasad N, Kim K, Taniguchi T, Watanabe K, MacDonald AH, Register LF, Tutuc E. Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe_{2} Heterostructures. Physical Review Letters. 120: 177702. PMID 29756812 DOI: 10.1103/Physrevlett.120.177702 |
0.709 |
|
2018 |
Movva HCP, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, Watanabe K, Banerjee SK, MacDonald AH, Tutuc E. Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}. Physical Review Letters. 120: 107703. PMID 29570322 DOI: 10.1103/Physrevlett.120.107703 |
0.773 |
|
2018 |
Larentis S, Movva HCP, Fallahazad B, Kim K, Behroozi A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Large effective mass and interaction-enhanced Zeeman splitting of
K
-valley electrons in
MoSe2 Physical Review B. 97. DOI: 10.1103/Physrevb.97.201407 |
0.794 |
|
2017 |
Jo JW, Kim KH, Kim J, Ban SG, Kim YH, Park SK. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by using bilayer Sol-Gel Gate Dielectrics. Acs Applied Materials & Interfaces. PMID 29280381 DOI: 10.1021/acsami.7b10786 |
0.304 |
|
2017 |
Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}. Physical Review Letters. 118: 247701. PMID 28665633 DOI: 10.1103/Physrevlett.118.247701 |
0.791 |
|
2017 |
Burg GW, Prasad N, Fallahazad B, Valsaraj A, Kim K, Taniguchi T, Watanabe K, Wang Q, Kim MJ, Register LF, Tutuc E. Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene - WSe2 Heterostructures. Nano Letters. PMID 28557462 DOI: 10.1021/Acs.Nanolett.7B01505 |
0.816 |
|
2017 |
Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. Acs Nano. PMID 28414214 DOI: 10.1021/Acsnano.7B01306 |
0.793 |
|
2017 |
Kim K, DaSilva A, Huang S, Fallahazad B, Larentis S, Taniguchi T, Watanabe K, LeRoy BJ, MacDonald AH, Tutuc E. Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 28292902 DOI: 10.1073/Pnas.1620140114 |
0.83 |
|
2017 |
Kang S, Mou X, Fallahazad B, Prasad N, Wu X, Valsaraj A, Movva HCP, Kim K, Tutuc E, Register LF, Banerjee SK. Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications Journal of Physics D: Applied Physics. 50: 383002. DOI: 10.1088/1361-6463/Aa8047 |
0.78 |
|
2017 |
Wen F, Dillen DC, Kim K, Tutuc E. Shell morphology and Raman spectra of epitaxial Ge−SixGe1−x and Si−SixGe1−x core-shell nanowires Journal of Applied Physics. 121: 234302. DOI: 10.1063/1.4985616 |
0.769 |
|
2017 |
Roy A, Ghosh R, Rai A, Sanne A, Kim K, Movva HCP, Dey R, Pramanik T, Chowdhury S, Tutuc E, Banerjee SK. Intra-domain periodic defects in monolayer MoS2 Applied Physics Letters. 110: 201905. DOI: 10.1063/1.4983789 |
0.555 |
|
2016 |
Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 27526261 DOI: 10.1021/Acs.Nanolett.6B03255 |
0.743 |
|
2016 |
Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters. PMID 27416362 DOI: 10.1021/Acs.Nanolett.6B01646 |
0.837 |
|
2016 |
Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Physical Review Letters. 116: 086601. PMID 26967432 DOI: 10.1103/Physrevlett.116.086601 |
0.777 |
|
2016 |
Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. Acs Applied Materials & Interfaces. PMID 26939890 DOI: 10.1021/Acsami.6B00961 |
0.773 |
|
2016 |
Kim K, Yankowitz MA, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 26859527 DOI: 10.1021/Acs.Nanolett.5B05263 |
0.812 |
|
2015 |
Dillen D, Wen F, Kim K, Tutuc E. Coherently strained Si-SixGe1-x core-shell nanowire heterostructures. Nano Letters. PMID 26606651 DOI: 10.1021/Acs.Nanolett.5B03961 |
0.765 |
|
2015 |
Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Acs Nano. PMID 26343531 DOI: 10.1021/Acsnano.5B04611 |
0.795 |
|
2015 |
Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E. Band Alignment in WSe2-Graphene Heterostructures. Acs Nano. 9: 4527-32. PMID 25768037 DOI: 10.1021/Acsnano.5B01114 |
0.798 |
|
2015 |
Yankowitz M, Larentis S, Kim K, Xue J, McKenzie D, Huang S, Paggen M, Ali MN, Cava RJ, Tutuc E, LeRoy BJ. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. Nano Letters. 15: 1925-9. PMID 25665012 DOI: 10.1021/Nl5047736 |
0.836 |
|
2015 |
Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y |
0.8 |
|
2015 |
Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737 |
0.801 |
|
2014 |
Corbet CM, McClellan C, Kim K, Sonde S, Tutuc E, Banerjee SK. Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms. Acs Nano. 8: 10480-5. PMID 25259872 DOI: 10.1021/Nn5038509 |
0.826 |
|
2014 |
Lee K, Fallahazad B, Xue J, Dillen DC, Kim K, Taniguchi T, Watanabe K, Tutuc E. Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene. Science (New York, N.Y.). 345: 58-61. PMID 24994645 DOI: 10.1126/Science.1251003 |
0.822 |
|
2014 |
Larentis S, Tolsma JR, Fallahazad B, Dillen DC, Kim K, MacDonald AH, Tutuc E. Band offset and negative compressibility in graphene-MoS2 heterostructures. Nano Letters. 14: 2039-45. PMID 24611616 DOI: 10.1021/Nl500212S |
0.811 |
|
2014 |
Dillen DC, Kim K, Liu ES, Tutuc E. Radial modulation doping in core-shell nanowires. Nature Nanotechnology. 9: 116-20. PMID 24441982 DOI: 10.1038/Nnano.2013.301 |
0.803 |
|
2013 |
Liu E, Dillen DC, Nah J, Fallahazad B, Kim K, Tutuc E. Realization and Scaling of ${\rm Ge}{\hbox{--}}{\rm Si}_{1{\hbox{-}}{\rm x}}{\rm Ge}_{\rm x}$ Core-Shell Nanowire $n$-FETs Ieee Transactions On Electron Devices. 60: 4027-4033. DOI: 10.1109/Ted.2013.2285711 |
0.757 |
|
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