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Songlin Li - Publications

Affiliations: 
Nanjing University, Nanjing Shi, Jiangsu Sheng, China 
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40 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Xu N, Shi L, Pei X, Zhang W, Chen J, Han Z, Samorì P, Wang J, Wang P, Shi Y, Li S. Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors. Nature Communications. 14: 4074. PMID 37429836 DOI: 10.1038/s41467-023-39781-y  0.404
2022 Zhou J, Zhang C, Shi L, Chen X, Kim TS, Gyeon M, Chen J, Wang J, Yu L, Wang X, Kang K, Orgiu E, Samorì P, Watanabe K, Taniguchi T, ... ... Li S, et al. Non-invasive digital etching of van der Waals semiconductors. Nature Communications. 13: 1844. PMID 35383178 DOI: 10.1038/s41467-022-29447-6  0.425
2020 Zhang D, Yin Y, Lv W, Gao F, Pan D, Tu X, Ju S, Su X, Ma X, Sun H, Xu Y, Li S, Shi Y. Sharply Increased Current in Asymmetrically Aligned Polycrystalline Polymer Transistors With Sub-Domain-Size Channels Ieee Electron Device Letters. 41: 589-592. DOI: 10.1109/Led.2020.2976653  0.301
2020 Zhang D, Yin Y, Lv W, Gao F, Pan D, Sun H, Xu Y, Ju S, Li S, Shi Y. Suppressing off-state current via molecular orientation in submicrometer polymer field-effect transistors Organic Electronics. 83: 105742. DOI: 10.1016/J.Orgel.2020.105742  0.335
2019 Yang R, Liu L, Feng S, Liu Y, Li SL, Zhai K, Xiang J, Mu C, Nie A, Wen F, Wang B, Zhang G, Gong Y, Zhao Z, Tian Y, et al. One-Step Growth of Spatially Graded MoW S Monolayer with Wide Span in Composition (from x=0 to 1) at Large Scale. Acs Applied Materials & Interfaces. PMID 31119937 DOI: 10.1021/Acsami.9B03608  0.317
2019 Li SL, Zhang L, Zhong X, Gobbi M, Bertolazzi S, Guo W, Wu B, Liu Y, Xu N, Niu W, Hao Y, Orgiu E, Samorì P. Nano-Subsidence Assisted Precise Integration of Patterned Two-Dimensional Materials for High-Performance Photodetector Arrays. Acs Nano. PMID 30730697 DOI: 10.1021/Acsnano.9B00889  0.518
2018 Sun Y, Luo S, Zhao XG, Biswas K, Li SL, Zhang L. InSe: a two-dimensional material with strong interlayer coupling. Nanoscale. PMID 29610784 DOI: 10.1039/C7Nr09486H  0.337
2018 Ju S, Liang B, Wang J, Shi Y, Li S. Graphene/silicon Schottky solar cells: Technical strategies for performance optimization Optics Communications. 428: 258-268. DOI: 10.1016/J.Optcom.2018.02.033  0.354
2017 Zhang L, Li SL, Squillaci MA, Zhong X, Yao Y, Orgiu E, Samorì P. Supramolecular self-assembly in sub-micron electrodic cavity: fabrication of heat reversible π-gel memristor. Journal of the American Chemical Society. PMID 28840716 DOI: 10.1021/Jacs.7B04347  0.656
2017 Zhang L, Pavlica E, Zhong X, Liscio F, Li S, Bratina G, Orgiu E, Samorì P. Fast-Response Photonic Device Based on Organic-Crystal Heterojunctions Assembled into a Vertical-Yet-Open Asymmetric Architecture. Advanced Materials (Deerfield Beach, Fla.). PMID 28112837 DOI: 10.1002/Adma.201605760  0.522
2017 Jia Z, Li S, Xiang J, Wen F, Bao X, Feng S, Yang R, Liu Z. Highly sensitive and fast monolayer WS2 phototransistors realized by SnS nanosheet decoration. Nanoscale. PMID 28094828 DOI: 10.1039/C6Nr08610A  0.331
2017 Yu Z, Ong Z, Li S, Xu J, Zhang G, Zhang Y, Shi Y, Wang X. Analyzing the Carrier Mobility in Transition-Metal Dichalcogenide MoS2Field-Effect Transistors Advanced Functional Materials. 27: 1604093. DOI: 10.1002/Adfm.201604093  0.377
2016 Zhang L, Zhong X, Pavlica E, Li S, Klekachev A, Bratina G, Ebbesen TW, Orgiu E, Samorì P. A nanomesh scaffold for supramolecular nanowire optoelectronic devices. Nature Nanotechnology. PMID 27454879 DOI: 10.1038/Nnano.2016.125  0.541
2016 Wang S, Li SL, Chervy T, Shalabney A, Azzini S, Orgiu E, Hutchison JA, Genet C, Samori P, Ebbesen TW. Coherent Coupling of WS2 Monolayers with Metallic Photonic Nanostructures at Room Temperature. Nano Letters. PMID 27266674 DOI: 10.1021/Acs.Nanolett.6B01475  0.451
2015 Li SL, Tsukagoshi K, Orgiu E, Samorì P. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors. Chemical Society Reviews. PMID 26593874 DOI: 10.1039/C5Cs00517E  0.517
2015 Wang J, Li S, Zou X, Ho J, Liao L, Xiao X, Jiang C, Hu W, Wang J, Li J. Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. Small (Weinheim An Der Bergstrasse, Germany). PMID 26426344 DOI: 10.1002/Smll.201501260  0.351
2015 Nakaharai S, Iijima T, Ogawa S, Yagi K, Harada N, Hayashi K, Kondo D, Takahashi M, Li S, Tsukagoshi K, Sato S, Yokoyama N. Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.04Dn06  0.392
2015 Li SL, Tsukagoshi K. Carrier injection and scattering in atomically thin chalcogenides Journal of the Physical Society of Japan. 84. DOI: 10.7566/Jpsj.84.121011  0.351
2014 Li SL, Komatsu K, Nakaharai S, Lin YF, Yamamoto M, Duan X, Tsukagoshi K. Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers. Acs Nano. 8: 12836-42. PMID 25470503 DOI: 10.1021/Nn506138Y  0.336
2014 Tian W, Zhang C, Zhai T, Li SL, Wang X, Liu J, Jie X, Liu D, Liao M, Koide Y, Golberg D, Bando Y. Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms. Advanced Materials (Deerfield Beach, Fla.). 26: 3088-93. PMID 24523228 DOI: 10.1002/Adma.201305457  0.333
2014 Lin Y, Li W, Li S, Xu Y, Aparecido-Ferreira A, Komatsu K, Sun H, Nakaharai S, Tsukagoshi K. Barrier inhomogeneities at vertically stacked graphene-based heterostructures Nanoscale. 6: 795-799. PMID 24257682 DOI: 10.1039/C3Nr03677D  0.372
2014 Komatsu K, Kasai S, Li S, Nakaharai S, Mitoma N, Yamamoto M, Tsukagoshi K. Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier Applied Physics Express. 7: 85101. DOI: 10.7567/Apex.7.085101  0.318
2014 Nakaharai S, Iijima T, Ogawa S, Li SL, Tsukagoshi K, Sato S, Yokoyama N. Electrostatically reversible polarity of dual-gated graphene transistors Ieee Transactions On Nanotechnology. 13: 1039-1043. DOI: 10.1109/Tnano.2014.2313134  0.328
2014 Tian W, Zhang C, Zhai T, Li S, Wang X, Liu J, Jie X, Liu D, Liao M, Koide Y, Golberg D, Bando Y. Photodetectors: Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS‐ZnO Heterostructure Nanofilms (Adv. Mater. 19/2014) Advanced Materials. 26: 3087-3087. DOI: 10.1002/Adma.201470127  0.307
2013 Song HS, Li SL, Gao L, Xu Y, Ueno K, Tang J, Cheng YB, Tsukagoshi K. High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits. Nanoscale. 5: 9666-70. PMID 23989804 DOI: 10.1039/C3Nr01899G  0.414
2013 Chan MY, Komatsu K, Li SL, Xu Y, Darmawan P, Kuramochi H, Nakaharai S, Aparecido-Ferreira A, Watanabe K, Taniguchi T, Tsukagoshi K. Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates. Nanoscale. 5: 9572-6. PMID 23986323 DOI: 10.1039/C3Nr03220E  0.358
2013 Li SL, Wakabayashi K, Xu Y, Nakaharai S, Komatsu K, Li WW, Lin YF, Aparecido-Ferreira A, Tsukagoshi K. Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors. Nano Letters. 13: 3546-52. PMID 23862641 DOI: 10.1021/Nl4010783  0.354
2013 Tian W, Zhai T, Zhang C, Li SL, Wang X, Liu F, Liu D, Cai X, Tsukagoshi K, Golberg D, Bando Y. Low-cost fully transparent ultraviolet photodetectors based on electrospun ZnO-SnO2 heterojunction nanofibers. Advanced Materials (Deerfield Beach, Fla.). 25: 4625-30. PMID 23836722 DOI: 10.1002/Adma.201301828  0.326
2013 Nakaharai S, Iijima T, Ogawa S, Suzuki S, Li SL, Tsukagoshi K, Sato S, Yokoyama N. Conduction tuning of graphene based on defect-induced localization. Acs Nano. 7: 5694-700. PMID 23786356 DOI: 10.1021/Nn401992Q  0.341
2013 Xu Y, Liu C, Scheideler W, Darmawan P, Li S, Balestra F, Ghibaudo G, Tsukagoshi K. How small the contacts could be optimal for nanoscale organic transistors Organic Electronics. 14: 1797-1804. DOI: 10.1016/J.Orgel.2013.04.014  0.329
2013 Nakaharai S, Iijima T, Ogawa S, Li SL, Tsukagoshi K, Sato S, Yokoyama N. Current on-off operation of graphene transistor with dual gates and He ion irradiated channel Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 1608-1611. DOI: 10.1002/Pssc.201300262  0.376
2012 Aparecido-Ferreira A, Miyazaki H, Li SL, Komatsu K, Nakaharai S, Tsukagoshi K. Enhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgap. Nanoscale. 4: 7842-6. PMID 23149422 DOI: 10.1039/C2Nr32526H  0.382
2012 Miyazaki H, Lee MV, Li SL, Hiura H, Kanda A, Tsukagoshi K. Observation of tunneling current in semiconducting graphene p-n junctions Journal of the Physical Society of Japan. 81. DOI: 10.1143/Jpsj.81.014708  0.367
2012 Nakaharai S, Iijima T, Ogawa S, Miyazaki H, Li S, Tsukagoshi K, Sato S, Yokoyama N. Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon Applied Physics Express. 5: 15101. DOI: 10.1143/Apex.5.015101  0.382
2012 Miyazaki H, Li S, Nakaharai S, Tsukagoshi K. Unipolar transport in bilayer graphene controlled by multiple p-n interfaces Applied Physics Letters. 100: 163115. DOI: 10.1063/1.3701592  0.323
2012 Darmawan P, Minari T, Xu Y, Li S, Song H, Chan M, Tsukagoshi K. Optimal Structure for High‐Performance and Low‐Contact‐Resistance Organic Field‐Effect Transistors Using Contact‐Doped Coplanar and Pseudo‐Staggered Device Architectures Advanced Functional Materials. 22: 4577-4583. DOI: 10.1002/Adfm.201201094  0.302
2011 Li SL, Miyazaki H, Lee MV, Liu C, Kanda A, Tsukagoshi K. Complementary-like graphene logic gates controlled by electrostatic doping. Small (Weinheim An Der Bergstrasse, Germany). 7: 1552-6. PMID 21538873 DOI: 10.1002/Smll.201100318  0.39
2011 Li SL, Miyazaki H, Hiura H, Liu C, Tsukagoshi K. Enhanced logic performance with semiconducting bilayer graphene channels. Acs Nano. 5: 500-6. PMID 21158484 DOI: 10.1021/Nn102346B  0.352
2010 Li SL, Miyazaki H, Kumatani A, Kanda A, Tsukagoshi K. Low operating bias and matched input-output characteristics in graphene logic inverters. Nano Letters. 10: 2357-62. PMID 20518487 DOI: 10.1021/Nl100031X  0.392
2010 Miyazaki H, Li S, Kanda A, Tsukagoshi K. Resistance modulation of multilayer graphene controlled by the gate electric field Semiconductor Science and Technology. 25: 34008. DOI: 10.1088/0268-1242/25/3/034008  0.362
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