Year |
Citation |
Score |
2020 |
Kim J, Pershin YV, Yin M, Datta T, Ventra MD. An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors Advanced Electronic Materials. 6: 2000010-2000010. DOI: 10.1002/Aelm.202000010 |
0.333 |
|
2019 |
Pershin YV, Di Ventra M. On the validity of memristor modeling in the neural network literature. Neural Networks : the Official Journal of the International Neural Network Society. 121: 52-56. PMID 31536899 DOI: 10.1016/J.Neunet.2019.08.026 |
0.309 |
|
2019 |
Pershin YV. A Demonstration of Implication Logic Based on Volatile (Diffusive) Memristors Ieee Transactions On Circuits and Systems Ii-Express Briefs. 66: 1033-1037. DOI: 10.1109/Tcsii.2018.2873635 |
0.337 |
|
2019 |
Pershin YV, Slipko VA. Bifurcation analysis of a TaO memristor model Journal of Physics D. 52: 505304. DOI: 10.1088/1361-6463/Ab4537 |
0.312 |
|
2019 |
Pershin YV, Ventra MD. A simple test for ideal memristors Journal of Physics D. 52. DOI: 10.1088/1361-6463/Aae680 |
0.332 |
|
2017 |
Slipko VA, Pershin YV. Switching synchronization in one-dimensional memristive networks: An exact solution. Physical Review E. 96: 62213. PMID 29347366 DOI: 10.1103/Physreve.96.062213 |
0.307 |
|
2017 |
Hartmann F, Maier P, Rebello Sousa Dias M, Göpfert S, Castelano LK, Emmerling M, Schneider C, Höfling S, Kamp M, Pershin Y, Marques GE, Lopez-Richard V, Worschech L. Nanoscale Tipping Bucket Effect In A Quantum Dot Transistor-Based Counter. Nano Letters. PMID 28296417 DOI: 10.1021/Acs.Nanolett.6B04911 |
0.351 |
|
2017 |
Pershin YV, Shevchenko SN. Computing with volatile memristors: an application of non-pinched hysteresis Nanotechnology. 28: 75204. PMID 27973349 DOI: 10.1088/1361-6528/Aa53Bf |
0.36 |
|
2016 |
Sinitsyn NA, Pershin YV. The theory of spin noise spectroscopy: a review. Reports On Progress in Physics. Physical Society (Great Britain). 79: 106501. PMID 27615689 DOI: 10.1088/0034-4885/79/10/106501 |
0.353 |
|
2016 |
Pershin YV, Shevchenko SN, Nori F. Memristive Sisyphus circuit for clock signal generation. Scientific Reports. 6: 26155. PMID 27199243 DOI: 10.1038/Srep26155 |
0.312 |
|
2016 |
Pershin YV, Castelano LK, Hartmann F, Lopez-Richard V, Ventra MD. A Memristive Pascaline Ieee Transactions On Circuits and Systems Ii-Express Briefs. 63: 558-562. DOI: 10.1109/Tcsii.2016.2530378 |
0.338 |
|
2016 |
Shevchenko SN, Pershin YV, Nori F. Qubit-Based Memcapacitors and Meminductors Physical Review Applied. 6. DOI: 10.1103/Physrevapplied.6.014006 |
0.325 |
|
2015 |
Slipko VA, Shumovskyi M, Pershin YV. Switching synchronization in one-dimensional memristive networks. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 92: 052917. PMID 26651772 DOI: 10.1103/Physreve.92.052917 |
0.337 |
|
2015 |
Pershin YV, Traversa FL, Ventra MD. Memcomputing with membrane memcapacitive systems. Nanotechnology. 26: 225201. PMID 25966017 DOI: 10.1088/0957-4484/26/22/225201 |
0.327 |
|
2015 |
Asapu S, Pershin YV. Electromechanical Emulator of Memristive Systems and Devices Ieee Transactions On Electron Devices. 62: 3678-3684. DOI: 10.1109/Ted.2015.2478864 |
0.314 |
|
2015 |
Ventra MD, Pershin YV. just add memory. Scientific American. 312: 56-61. DOI: 10.1038/Scientificamerican0215-56 |
0.316 |
|
2014 |
Schenk T, Schroeder U, Peši? M, Popovici M, Pershin YV, Mikolajick T. Electric field cycling behavior of ferroelectric hafnium oxide. Acs Applied Materials & Interfaces. 6: 19744-51. PMID 25365475 DOI: 10.1021/Am504837R |
0.304 |
|
2014 |
Traversa FL, Bonani F, Pershin YV, Ventra MD. Dynamic computing random access memory Nanotechnology. 25: 285201. PMID 24972387 DOI: 10.1088/0957-4484/25/28/285201 |
0.324 |
|
2013 |
Traversa FL, Pershin YV, Di Ventra M. Memory models of adaptive behavior. Ieee Transactions On Neural Networks and Learning Systems. 24: 1437-48. PMID 24808580 DOI: 10.1109/Tnnls.2013.2261545 |
0.343 |
|
2013 |
Li F, Pershin YV, Slipko VA, Sinitsyn NA. Nonequilibrium spin noise spectroscopy. Physical Review Letters. 111: 067201. PMID 23971605 DOI: 10.1103/Physrevlett.111.067201 |
0.376 |
|
2013 |
Di Ventra M, Pershin YV. On the physical properties of memristive, memcapacitive and meminductive systems. Nanotechnology. 24: 255201. PMID 23708238 DOI: 10.1088/0957-4484/24/25/255201 |
0.356 |
|
2013 |
Slipko VA, Pershin YV, Di Ventra M. Changing the state of a memristive system with white noise. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 87: 042103. PMID 23679369 DOI: 10.1103/Physreve.87.042103 |
0.303 |
|
2013 |
Pershin YV, Slipko VA, Di Ventra M. Complex dynamics and scale invariance of one-dimensional memristive networks. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 87: 022116. PMID 23496469 DOI: 10.1103/Physreve.87.022116 |
0.349 |
|
2013 |
Slipko VA, Sinitsyn NA, Pershin YV. Hybrid spin noise spectroscopy and the spin Hall effect Physical Review B. 88: 201102. DOI: 10.1103/Physrevb.88.201102 |
0.38 |
|
2013 |
Roy D, Li Y, Greilich A, Pershin YV, Saxena A, Sinitsyn NA. Spin noise spectroscopy of quantum dot molecules Physical Review B. 88. DOI: 10.1103/Physrevb.88.045320 |
0.358 |
|
2013 |
Slipko VA, Hayeva AA, Pershin YV. Decay of persistent spin helix due to the spin relaxation at boundaries Physical Review B. 87: 35430. DOI: 10.1103/Physrevb.87.035430 |
0.365 |
|
2013 |
Pershin YV, Slipko VA, Roy D, Sinitsyn NA. Publisher's Note: “Two-beam spin noise spectroscopy” [Appl. Phys. Lett. 102, 202405 (2013)] Applied Physics Letters. 102: 249902. DOI: 10.1063/1.4811649 |
0.304 |
|
2013 |
Pershin YV, Slipko VA, Roy D, Sinitsyn NA. Two-beam spin noise spectroscopy Applied Physics Letters. 102: 202405. DOI: 10.1063/1.4807011 |
0.364 |
|
2013 |
Ievlev AV, Jesse S, Morozovska AN, Strelcov E, Eliseev EA, Pershin YV, Kumar A, Shur VY, Kalinin SV. Intermittency, quasiperiodicity and chaos in probe-induced ferroelectric domain switching Nature Physics. 10: 59-66. DOI: 10.1038/Nphys2796 |
0.31 |
|
2013 |
Ventra MD, Pershin YV. The parallel approach Nature Physics. 9: 200-202. DOI: 10.1038/Nphys2566 |
0.31 |
|
2012 |
Pershin YV, Ventra MD. Teaching Memory Circuit Elements via Experiment-Based Learning Ieee Circuits and Systems Magazine. 12: 64-74. DOI: 10.1109/Mcas.2011.2181096 |
0.33 |
|
2012 |
Cohen GZ, Pershin YV, Ventra MD. Lagrange formalism of memory circuit elements: Classical and quantum formulations Physical Review B. 85: 165428. DOI: 10.1103/Physrevb.85.165428 |
0.38 |
|
2011 |
Di Ventra M, Pershin YV. Spin physics: DNA spintronics sees the light. Nature Nanotechnology. 6: 198-9. PMID 21468108 DOI: 10.1038/Nnano.2011.48 |
0.307 |
|
2011 |
Slipko VA, Pershin YV. Spin relaxation in Rashba rings Epl. 95: 37004. DOI: 10.1209/0295-5075/95/37004 |
0.369 |
|
2011 |
Martinez-Rincon J, Pershin YV. Bistable Nonvolatile Elastic-Membrane Memcapacitor Exhibiting a Chaotic Behavior Ieee Transactions On Electron Devices. 58: 1809-1812. DOI: 10.1109/Ted.2011.2126022 |
0.328 |
|
2011 |
Slipko VA, Pershin YV. Kinetics of spin relaxation in quantum wires and channels: Boundary spin echo and formation of a persistent spin helix Physical Review B. 84: 155306. DOI: 10.1103/Physrevb.84.155306 |
0.369 |
|
2011 |
Slipko VA, Pershin YV. Dynamics of Spin Relaxation in Finite-Size Two-Dimensional Systems: An Exact Solution Physical Review B. 84: 75331. DOI: 10.1103/Physrevb.84.075331 |
0.377 |
|
2011 |
Pershin YV, Ventra MD. Memory effects in complex materials and nanoscale systems Advances in Physics. 60: 145-227. DOI: 10.1080/00018732.2010.544961 |
0.367 |
|
2011 |
Ventra MD, Pershin YV. Memory materials: a unifying description Materials Today. 14: 584-591. DOI: 10.1016/S1369-7021(11)70299-1 |
0.351 |
|
2010 |
Pershin YV, Di Ventra M. Experimental demonstration of associative memory with memristive neural networks. Neural Networks : the Official Journal of the International Neural Network Society. 23: 881-6. PMID 20605401 DOI: 10.1016/J.Neunet.2010.05.001 |
0.325 |
|
2010 |
Krems M, Pershin YV, Di Ventra M. Ionic memcapacitive effects in nanopores. Nano Letters. 10: 2674-8. PMID 20583820 DOI: 10.1021/Nl1014734 |
0.323 |
|
2010 |
Pershin YV, Ventra MD. Practical Approach to Programmable Analog Circuits With Memristors Ieee Transactions On Circuits and Systems I-Regular Papers. 57: 1857-1864. DOI: 10.1109/Tcsi.2009.2038539 |
0.311 |
|
2010 |
Pershin YV, Slipko VA. Radial spin helix in two-dimensional electron systems with Rashba spin-orbit coupling Physical Review B. 82: 125325. DOI: 10.1103/Physrevb.82.125325 |
0.375 |
|
2010 |
Pershin YV, Ventra MD. Memristive circuits simulate memcapacitors and meminductors Electronics Letters. 46: 517-518. DOI: 10.1049/El.2010.2830 |
0.334 |
|
2009 |
Pershin YV, La Fontaine S, Di Ventra M. Memristive model of amoeba learning. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 80: 021926. PMID 19792170 DOI: 10.1103/Physreve.80.021926 |
0.313 |
|
2009 |
Pershin YV, Ventra MD. Frequency doubling and memory effects in the spin Hall effect Physical Review B. 79. DOI: 10.1103/Physrevb.79.153307 |
0.409 |
|
2009 |
Pershin Y, Ventra MD. Experimental demonstration of associative memory with memristive neural networks Nature Precedings. DOI: 10.1038/Npre.2009.3258.1 |
0.301 |
|
2008 |
Pershin YV, Ventra Md. Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime Physical Review B. 77: 73301. DOI: 10.1103/Physrevb.77.073301 |
0.373 |
|
2008 |
Pershin YV, Ventra MD. A voltage probe of the spin Hall effect Journal of Physics: Condensed Matter. 20: 25204. DOI: 10.1088/0953-8984/20/02/025204 |
0.409 |
|
2007 |
Pershin YV, Ventra MD. Spin blockade at semiconductor/ferromagnet junctions Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.193301 |
0.389 |
|
2007 |
Pershin YV. Optically Induced Suppression of Spin Relaxation in Two-Dimensional Electron Systems with Rashba Interaction Physical Review B. 75: 165320. DOI: 10.1103/Physrevb.75.165320 |
0.367 |
|
2007 |
Pershin YV, Piermarocchi C. Radiation-induced current in quantum wires with side-coupled nanorings Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.035326 |
0.316 |
|
2005 |
Nesteroff JA, Pershin YV, Privman V. Influence of nuclear spin polarization on quantum wire conductance Ieee Transactions On Nanotechnology. 4: 141-147. DOI: 10.1109/Tnano.2004.837855 |
0.377 |
|
2005 |
Pershin YV, Piermarocchi C. Laser-controlled local magnetic field with semiconductor quantum rings Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.245331 |
0.32 |
|
2005 |
Fedorov A, Pershin YV, Piermarocchi C. Spin-photovoltaic effect in quantum wires due to intersubband transitions Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.245327 |
0.354 |
|
2005 |
Pershin YV, Piermarocchi C. Photovoltaic effect in bent quantum wires in the ballistic transport regime Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195340 |
0.31 |
|
2005 |
Pershin YV. Long-Lived Spin Coherence States in Semiconductor Heterostructures Physical Review B. 71: 155317. DOI: 10.1103/Physrevb.71.155317 |
0.383 |
|
2005 |
Pershin YV, Piermarocchi C. Spin photovoltaic effect in quantum wires with Rashba interaction Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1935747 |
0.398 |
|
2005 |
Saikin S, Pershin YV, Privman V. Modelling for semiconductor spintronics Iee Proceedings: Circuits, Devices and Systems. 152: 366-376. DOI: 10.1049/Ip-Cds:20045225 |
0.31 |
|
2005 |
Pershin YV, Samsonov BF. Quantum dots created through spherically polarized nuclear spins Physica E-Low-Dimensional Systems & Nanostructures. 28: 134-140. DOI: 10.1016/J.Physe.2005.03.006 |
0.35 |
|
2005 |
Pershin YV. Dynamics of spin relaxation near the edge of two-dimensional electron gas Physica E-Low-Dimensional Systems & Nanostructures. 27: 77-81. DOI: 10.1016/J.Physe.2004.10.013 |
0.381 |
|
2004 |
Nesteroff JA, Pershin YV, Privman V. Polarization of nuclear spins from the conductance of quantum wire. Physical Review Letters. 93: 126601. PMID 15447293 DOI: 10.1103/Physrevlett.93.126601 |
0.382 |
|
2004 |
Pershin YV, Nesteroff JA, Privman V. Effect of spin-orbit interaction and in-plane magnetic field on the conductance of a quasi-one-dimensional system Physical Review B - Condensed Matter and Materials Physics. 69: 1213061-1213064. DOI: 10.1103/Physrevb.69.121306 |
0.345 |
|
2004 |
Pershin YV, Privman V. Slow spin relaxation in two-dimensional electron systems with antidots Physical Review B - Condensed Matter and Materials Physics. 69: 733101-733104. DOI: 10.1103/Physrevb.69.073310 |
0.391 |
|
2004 |
Pershin YV. Drift–diffusion approach to spin-polarized transport Physica E-Low-Dimensional Systems & Nanostructures. 23: 226-231. DOI: 10.1016/J.Physe.2004.03.007 |
0.388 |
|
2003 |
Pershin YV, Privman V. Focusing of spin polarization in semiconductors by inhomogeneous doping. Physical Review Letters. 90: 256602. PMID 12857152 DOI: 10.1103/Physrevlett.90.256602 |
0.385 |
|
2003 |
Pershin YV, Privman V. Spin relaxation of conduction electrons in semiconductors due to interaction with nuclear spins Nano Letters. 3: 695-700. DOI: 10.1021/Nl034009L |
0.382 |
|
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