| Year |
Citation |
Score |
| 2022 |
Zhang X, He Y, Ren P, Chen L, Han Z, Qi L, Chen L, Luo Y, Zhang N, Lu W, Guo H. Low expression and Hypermethylation of ATP2B1 in Intrahepatic Cholangiocarcinoma Correlated With Cold Tumor Microenvironment. Frontiers in Oncology. 12: 927298. PMID 35875160 DOI: 10.3389/fonc.2022.927298 |
0.313 |
|
| 2022 |
Chen Y, Zhong J, Wang L, Shi X, Lu W, Li J, Feng J, Xia Y, Chang R, Fan J, Chen L, Zhu Y, Yan F, Yao W, Zhang H. Robustness of CT radiomics features: consistency within and between single-energy CT and dual-energy CT. European Radiology. PMID 35192011 DOI: 10.1007/s00330-022-08628-3 |
0.319 |
|
| 2021 |
Zhao X, Yi R, Zheng L, Liu Y, Li Z, Zeng L, Shen Y, Lu W, Chen L. Practical Prelithiation of 4.5 V LiCoO ||Graphite Batteries by a Passivated Lithium-Carbon Composite. Small (Weinheim An Der Bergstrasse, Germany). e2106394. PMID 34908238 DOI: 10.1002/smll.202106394 |
0.401 |
|
| 2021 |
Zheng L, Guo F, Kang T, Fan Y, Gu W, Mao Y, Liu Y, Huang R, Li Z, Shen Y, Lu W, Chen L. Stable Lithium-Carbon Composite Enabled by Dual-Salt Additives. Nano-Micro Letters. 13: 111. PMID 34138358 DOI: 10.1007/s40820-021-00633-3 |
0.412 |
|
| 2021 |
Liu D, Luo Y, Chen L, Chen L, Zuo D, Li Y, Zhang X, Wu J, Xi Q, Li G, Qi L, Yue X, Zhang X, Sun Z, Zhang N, ... ... Lu W, et al. Diagnostic value of 5 serum biomarkers for hepatocellular carcinoma with different epidemiological backgrounds: A large-scale, retrospective study. Cancer Biology & Medicine. 18: 256-270. PMID 33628599 DOI: 10.20892/j.issn.2095-3941.2020.0207 |
0.304 |
|
| 2020 |
Hu C, Shen Y, Shen M, Liu X, Chen H, Liu C, Kang T, Jin F, Li L, Li J, Li Y, Zhao N, Guo X, Lu W, Hu B, et al. Superionic Conductors via Bulk Interfacial Conduction. Journal of the American Chemical Society. PMID 32986953 DOI: 10.1021/jacs.0c07060 |
0.383 |
|
| 2020 |
Lee SH, Zhu X, Lu WD. Nanoscale resistive switching devices for memory and computing applications Nano Research. 13: 1228-1243. DOI: 10.1007/S12274-020-2616-0 |
0.307 |
|
| 2019 |
Guo F, Kang T, Liu Z, Tong B, Guo L, Wang Y, Liu C, Chen X, Zhao Y, Shen Y, Lu W, Chen L, Peng Z. An Advanced Lithium Metal-Carbon Nanotube Composite Anode for High-Performance Lithium-Oxygen Batteries. Nano Letters. PMID 31381355 DOI: 10.1021/Acs.Nanolett.9B02560 |
0.417 |
|
| 2019 |
Cheng G, Zhang Y, Chang TH, Liu Q, Chen L, Lu WD, Zhu T, Zhu Y. In situ nano-thermo-mechanical experiment reveals brittle to ductile transition in silicon nanowires. Nano Letters. PMID 31314538 DOI: 10.1021/Acs.Nanolett.9B01789 |
0.32 |
|
| 2019 |
Kang T, Wang Y, Guo F, Liu C, Zhao J, Yang J, Lin H, Qiu Y, Shen Y, Lu W, Chen L. Self-Assembled Monolayer Enables Slurry-Coating of Li Anode. Acs Central Science. 5: 468-476. PMID 30937374 DOI: 10.1021/Acscentsci.8B00845 |
0.394 |
|
| 2019 |
Lee J, Schell W, Zhu X, Kioupakis E, Lu WD. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based RRAM. Acs Applied Materials & Interfaces. PMID 30816044 DOI: 10.1021/Acsami.8B18386 |
0.319 |
|
| 2019 |
Zhu X, Lee SH, Lu WD. Nanoionic Resistive‐Switching Devices Advanced Electronic Materials. 5: 1900184. DOI: 10.1002/Aelm.201900184 |
0.312 |
|
| 2019 |
Lanza M, Wong H‐P, Pop E, Ielmini D, Strukov D, Regan BC, Larcher L, Villena MA, Yang JJ, Goux L, Belmonte A, Yang Y, Puglisi FM, Kang J, Magyari‐Köpe B, ... ... Lu WD, et al. Recommended Methods to Study Resistive Switching Devices Advanced Electronic Materials. 5: 1800143. DOI: 10.1002/Aelm.201800143 |
0.322 |
|
| 2018 |
Zhu X, Li D, Liang X, Lu WD. Ionic modulation and ionic coupling effects in MoS devices for neuromorphic computing. Nature Materials. PMID 30559410 DOI: 10.1038/S41563-018-0248-5 |
0.356 |
|
| 2018 |
Li D, Wu B, Zhu X, Wang J, Ryu B, Lu WD, Lu W, Liang X. MoS2 Memristors Exhibiting Variable Switching Characteristics towards Bio-Realistic Synaptic Emulation. Acs Nano. PMID 30192507 DOI: 10.1021/Acsnano.8B03977 |
0.344 |
|
| 2018 |
Shin JH, Wang Q, Lu WD. Self-Limited and Forming-Free CBRAM Device With Double Al2O3 ALD Layers Ieee Electron Device Letters. 39: 1512-1515. DOI: 10.1109/Led.2018.2868459 |
0.308 |
|
| 2018 |
Ma W, Zidan MA, Lu WD. Neuromorphic computing with memristive devices Science China Information Sciences. 61. DOI: 10.1007/S11432-017-9424-Y |
0.306 |
|
| 2017 |
Lee J, Lu WD. On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics. Advanced Materials (Deerfield Beach, Fla.). PMID 28985005 DOI: 10.1002/Adma.201702770 |
0.363 |
|
| 2017 |
Hu C, Chen H, Shen Y, Lu D, Zhao Y, Lu AH, Wu X, Lu W, Chen L. In situ wrapping of the cathode material in lithium-sulfur batteries. Nature Communications. 8: 479. PMID 28883433 DOI: 10.1038/S41467-017-00656-8 |
0.404 |
|
| 2017 |
Zhu X, Lee J, Lu WD. Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects. Advanced Materials (Deerfield Beach, Fla.). PMID 28582597 DOI: 10.1002/Adma.201700527 |
0.347 |
|
| 2017 |
Lu W, Zhang J, Xu J, Wu X, Chen L. In-situ visualized cathode electrolyte interphase on LiCoO2 in high voltage cycling. Acs Applied Materials & Interfaces. PMID 28497948 DOI: 10.1021/Acsami.7B03024 |
0.397 |
|
| 2017 |
Du S, Lu W, Ali A, Zhao P, Shehzad K, Guo H, Ma L, Liu X, Pi X, Wang P, Fang H, Xu Z, Gao C, Dan Y, Tan P, et al. A Broadband Fluorographene Photodetector. Advanced Materials (Deerfield Beach, Fla.). PMID 28374435 DOI: 10.1002/Adma.201700463 |
0.412 |
|
| 2017 |
Otuonye U, Kim HW, Lu WD. Ge nanowire photodetector with high photoconductive gain epitaxially integrated on Si substrate Applied Physics Letters. 110: 173104. DOI: 10.1063/1.4982648 |
0.343 |
|
| 2017 |
Zidan MA, Chen A, Indiveri G, Lu WD. Memristive computing devices and applications Journal of Electroceramics. 39: 4-20. DOI: 10.1007/S10832-017-0103-0 |
0.342 |
|
| 2017 |
Yang Y, Yin M, Yu Z, Wang Z, Zhang T, Cai Y, Lu WD, Huang R. Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic Advanced Electronic Materials. 3: 1700032. DOI: 10.1002/Aelm.201700032 |
0.327 |
|
| 2016 |
Valov I, Lu WD. Electrochemistry at the Nanoscale. Nanoscale. PMID 27412487 DOI: 10.1039/C6Nr90142E |
0.352 |
|
| 2016 |
Wang Q, Sun L, Lu J, Ren ML, Zhang T, Huang Y, Zhou X, Sun Y, Zhang B, Chen C, Shen X, Agarwal R, Lu W. Emission energy, exciton dynamics and lasing properties of buckled CdS nanoribbons. Scientific Reports. 6: 26607. PMID 27210303 DOI: 10.1038/Srep26607 |
0.33 |
|
| 2016 |
Valov I, Lu WD. Nanoscale electrochemistry using dielectric thin films as solid electrolytes. Nanoscale. PMID 27150952 DOI: 10.1039/C6Nr01383J |
0.304 |
|
| 2016 |
Lee J, Du C, Sun K, Kioupakis E, Lu WD. Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores. Acs Nano. PMID 26954948 DOI: 10.1021/Acsnano.5B07943 |
0.348 |
|
| 2016 |
Tian B, Liu S, Lu W, Jin L, Li Q, Shi Y, Li C, Wang Z, Du Y. Construction of pH-responsive and up-conversion luminescent NaYF4:Yb(3+)/Er(3+)@SiO2@PMAA nanocomposite for colon targeted drug delivery. Scientific Reports. 6: 21335. PMID 26891778 DOI: 10.1038/srep21335 |
0.353 |
|
| 2016 |
Yang Y, Lu WD. Progress in the characterizations and understanding of conducting filaments in resistive switching devices Ieee Transactions On Nanotechnology. 15: 465-472. DOI: 10.1109/Tnano.2016.2544782 |
0.357 |
|
| 2015 |
Chen L, Cai F, Otuonye U, Lu WD. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor. Nano Letters. PMID 26674542 DOI: 10.1021/Acs.Nanolett.5B04038 |
0.41 |
|
| 2015 |
Zhang K, Zhang XQ, Lu W, Xie HR, He L, Jiang XH, Wang L. [Determination of Desloratadine and Its Metabolite 3-OH Desloratadine in Human Plasma by LC-MS/MS]. Sichuan Da Xue Xue Bao. Yi Xue Ban = Journal of Sichuan University. Medical Science Edition. 46: 783-7, 804. PMID 26619557 |
0.311 |
|
| 2015 |
Liu X, Lewis JJ, Zhang H, Lu W, Zhang S, Zheng G, Bai L, Li J, Li X, Chen H, Liu M, Chen R, Chi J, Lu J, Huan S, et al. Effectiveness of Electronic Reminders to Improve Medication Adherence in Tuberculosis Patients: A Cluster-Randomised Trial. Plos Medicine. 12: e1001876. PMID 26372470 DOI: 10.1371/journal.pmed.1001876 |
0.326 |
|
| 2015 |
Chen Q, Mao L, Li Y, Kong T, Wu N, Ma C, Bai S, Jin Y, Wu D, Lu W, Wang B, Chen L. Quantitative operando visualization of the energy band depth profile in solar cells. Nature Communications. 6: 7745. PMID 26166580 DOI: 10.1038/Ncomms8745 |
0.417 |
|
| 2015 |
Chen H, Wang C, Dai Y, Qiu S, Yang J, Lu W, Chen L. Rational Design of Cathode Structure for High Rate Performance Lithium-Sulfur Batteries. Nano Letters. PMID 26148126 DOI: 10.1021/Acs.Nanolett.5B01837 |
0.397 |
|
| 2015 |
Zhang J, Lu W, Li YS, Cai J, Chen L. Dielectric Force Microscopy: Imaging Charge Carriers in Nanomaterials without Electrical Contacts. Accounts of Chemical Research. 48: 1788-96. PMID 26061707 DOI: 10.1021/Acs.Accounts.5B00046 |
0.456 |
|
| 2015 |
Tan H, Liu G, Zhu X, Yang H, Chen B, Chen X, Shang J, Lu WD, Wu Y, Li RW. An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions. Advanced Materials (Deerfield Beach, Fla.). 27: 2797-803. PMID 25786781 DOI: 10.1002/Adma.201500039 |
0.312 |
|
| 2015 |
Wang M, Zhou J, Yang Y, Gaba S, Liu M, Lu WD. Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays. Nanoscale. 7: 4964-70. PMID 25691134 DOI: 10.1039/C4Nr06922F |
0.354 |
|
| 2015 |
Chen H, Wang C, Dong W, Lu W, Du Z, Chen L. Monodispersed sulfur nanoparticles for lithium-sulfur batteries with theoretical performance. Nano Letters. 15: 798-802. PMID 25546227 DOI: 10.1021/Nl504963E |
0.388 |
|
| 2015 |
Ma W, Chen L, Du C, Lu WD. Temporal information encoding in dynamic memristive devices Applied Physics Letters. 107: 193101. DOI: 10.1063/1.4935220 |
0.318 |
|
| 2015 |
Jeong Y, Kim S, Lu WD. Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor Applied Physics Letters. 107. DOI: 10.1063/1.4934818 |
0.307 |
|
| 2014 |
Kim S, Choi S, Lee J, Lu WD. Tuning resistive switching characteristics of tantalum oxide memristors through Si doping. Acs Nano. 8: 10262-9. PMID 25255038 DOI: 10.1021/Nn503464Q |
0.35 |
|
| 2014 |
Yang Y, Gao P, Li L, Pan X, Tappertzhofen S, Choi S, Waser R, Valov I, Lu WD. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nature Communications. 5: 4232. PMID 24953477 DOI: 10.1038/Ncomms5232 |
0.357 |
|
| 2014 |
Zheng J, Zheng H, Wang R, Ben L, Lu W, Chen L, Chen L, Li H. 3D visualization of inhomogeneous multi-layered structure and Young's modulus of the solid electrolyte interphase (SEI) on silicon anodes for lithium ion batteries. Physical Chemistry Chemical Physics : Pccp. 16: 13229-38. PMID 24869920 DOI: 10.1039/C4Cp01968G |
0.408 |
|
| 2014 |
Yang Y, Lee J, Lee S, Liu CH, Zhong Z, Lu W. Oxide resistive memory with functionalized graphene as built-in selector element. Advanced Materials (Deerfield Beach, Fla.). 26: 3693-9. PMID 24644034 DOI: 10.1002/Adma.201400270 |
0.424 |
|
| 2014 |
Kim S, Choi S, Lu W. Comprehensive physical model of dynamic resistive switching in an oxide memristor. Acs Nano. 8: 2369-76. PMID 24571386 DOI: 10.1021/Nn405827T |
0.333 |
|
| 2014 |
Wang C, Chen H, Dong W, Ge J, Lu W, Wu X, Guo L, Chen L. Sulfur-amine chemistry-based synthesis of multi-walled carbon nanotube-sulfur composites for high performance Li-S batteries. Chemical Communications (Cambridge, England). 50: 1202-4. PMID 24326574 DOI: 10.1039/C3Cc47223J |
0.402 |
|
| 2014 |
Choi S, Yang Y, Lu W. Random telegraph noise and resistance switching analysis of oxide based resistive memory Nanoscale. 6: 400-404. PMID 24202235 DOI: 10.1039/C3Nr05016E |
0.308 |
|
| 2014 |
Zhou J, Kim K, Lu W. Crossbar RRAM Arrays: Selector Device Requirements During Read Operation Ieee Transactions On Electron Devices. 61: 2820-2826. DOI: 10.1109/Ted.2014.2327514 |
0.337 |
|
| 2014 |
Gaba S, Sheridan P, Du C, Lu W. 3-D Vertical Dual-Layer Oxide Memristive Devices Ieee Transactions On Electron Devices. 61: 2581-2583. DOI: 10.1109/Ted.2014.2319814 |
0.351 |
|
| 2014 |
Gaba S, Cai F, Zhou J, Lu WD. Ultralow Sub-1-nA Operating Current Resistive Memory With Intrinsic Non-Linear Characteristics Ieee Electron Device Letters. 35: 1239-1241. DOI: 10.1109/Led.2014.2363618 |
0.323 |
|
| 2014 |
Choi S, Lee J, Kim S, Lu WD. Retention failure analysis of metal-oxide based resistive memory Applied Physics Letters. 105: 113510. DOI: 10.1063/1.4896154 |
0.349 |
|
| 2014 |
Moon T, Chen L, Choi S, Kim C, Lu W. Efficient Si Nanowire Array Transfer via Bi‐Layer Structure Formation Through Metal‐Assisted Chemical Etching Advanced Functional Materials. 24: 1949-1955. DOI: 10.1002/Adfm.201303180 |
0.344 |
|
| 2013 |
Chen F, Chen Q, Mao L, Wang Y, Huang X, Lu W, Wang B, Chen L. Tuning indium tin oxide work function with solution-processed alkali carbonate interfacial layers for high-efficiency inverted organic photovoltaic cells. Nanotechnology. 24: 484011. PMID 24196689 DOI: 10.1088/0957-4484/24/48/484011 |
0.439 |
|
| 2013 |
Chen L, Fung WY, Lu W. Vertical Nanowire Heterojunction Devices Based on a Clean Si/Ge Interface Nano Letters. 13: 5521-5527. PMID 24134685 DOI: 10.1021/Nl403112A |
0.341 |
|
| 2013 |
Yang Y, Lu W. Nanoscale resistive switching devices: mechanisms and modeling. Nanoscale. 5: 10076-92. PMID 24057010 DOI: 10.1039/C3Nr03472K |
0.353 |
|
| 2013 |
Yang Y, Choi S, Lu W. Oxide Heterostructure Resistive Memory Nano Letters. 13: 2908-2915. PMID 23724783 DOI: 10.1021/Nl401287W |
0.318 |
|
| 2013 |
Chen H, Dong W, Ge J, Wang C, Wu X, Lu W, Chen L. Ultrafine sulfur nanoparticles in conducting polymer shell as cathode materials for high performance lithium/sulfur batteries. Scientific Reports. 3: 1910. PMID 23714786 DOI: 10.1038/Srep01910 |
0.364 |
|
| 2013 |
Gaba S, Sheridan P, Zhou J, Choi S, Lu W. Stochastic memristive devices for computing and neuromorphic applications. Nanoscale. 5: 5872-8. PMID 23698627 DOI: 10.1039/C3Nr01176C |
0.336 |
|
| 2013 |
Chen Q, Ding H, Wu Y, Sui M, Lu W, Wang B, Su W, Cui Z, Chen L. Passivation of surface states in the ZnO nanowire with thermally evaporated copper phthalocyanine for hybrid photodetectors. Nanoscale. 5: 4162-5. PMID 23592178 DOI: 10.1039/C3Nr01088K |
0.403 |
|
| 2013 |
Chang T, Yang Y, Lu W. Building Neuromorphic Circuits with Memristive Devices Ieee Circuits and Systems Magazine. 13: 56-73. DOI: 10.1109/Mcas.2013.2256260 |
0.333 |
|
| 2013 |
Kim S, Moon DI, Lu W, Kim DH, Kim DM, Choi YK, Choi SJ. Latch-up based bidirectional npn selector for bipolar resistance-change memory Applied Physics Letters. 103: 33505. DOI: 10.1063/1.4813832 |
0.337 |
|
| 2013 |
Lu W. Memristors: Going active Nature Materials. 12: 93-94. DOI: 10.1038/Nmat3524 |
0.302 |
|
| 2012 |
Zhang J, Lu W, Li YS, Lu D, Zhang T, Wang X, Chen L. Probing Electronic Doping of Single-Walled Carbon Nanotubes by Gaseous Ammonia with Dielectric Force Microscopy. The Journal of Physical Chemistry Letters. 3: 3509-12. PMID 26290980 DOI: 10.1021/Jz301622A |
0.445 |
|
| 2012 |
Zhu X, Su W, Liu Y, Hu B, Pan L, Lu W, Zhang J, Li RW. Observation of conductance quantization in oxide-based resistive switching memory. Advanced Materials (Deerfield Beach, Fla.). 24: 3941-6. PMID 22707001 DOI: 10.1002/Adma.201201506 |
0.307 |
|
| 2012 |
Yang Y, Gao P, Gaba S, Chang T, Pan X, Lu W. Observation of conducting filament growth in nanoscale resistive memories. Nature Communications. 3: 732. PMID 22415823 DOI: 10.1038/Ncomms1737 |
0.377 |
|
| 2012 |
Zhang J, Wang R, Yang X, Lu W, Wu X, Wang X, Li H, Chen L. Direct observation of inhomogeneous solid electrolyte interphase on MnO anode with atomic force microscopy and spectroscopy. Nano Letters. 12: 2153-7. PMID 22385103 DOI: 10.1021/Nl300570D |
0.392 |
|
| 2012 |
Kim KH, Gaba S, Wheeler D, Cruz-Albrecht JM, Hussain T, Srinivasa N, Lu W. A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano Letters. 12: 389-95. PMID 22141918 DOI: 10.1021/Nl203687N |
0.321 |
|
| 2012 |
Gaba S, Choi S, Sheridan P, Chang T, Yang Y, Lu W. Improvement of RRAM Device Performance Through On-Chip Resistors Mrs Proceedings. 1430. DOI: 10.1557/Opl.2012.1102 |
0.384 |
|
| 2012 |
Lu W, Jeong DS, Kozicki M, Waser R. Electrochemical metallization cells-blending nanoionics into nanoelectronics? Mrs Bulletin. 37: 124-130. DOI: 10.1557/Mrs.2012.5 |
0.352 |
|
| 2012 |
Yan Liang L, Tao Cao H, Bo Chen X, Min Liu Z, Zhuge F, Luo H, Li J, Cheng Lu Y, Lu W. Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities Applied Physics Letters. 100. DOI: 10.1063/1.4731271 |
0.357 |
|
| 2011 |
Sheridan P, Kim KH, Gaba S, Chang T, Chen L, Lu W. Device and SPICE modeling of RRAM devices. Nanoscale. 3: 3833-40. PMID 21847501 DOI: 10.1039/C1Nr10557D |
0.347 |
|
| 2011 |
Scholten K, Bohrer FI, Dattoli E, Lu W, Zellers ET. Organic vapor discrimination with chemiresistor arrays of temperature modulated tin-oxide nanowires and thiolate-monolayer-protected gold nanoparticles. Nanotechnology. 22: 125501. PMID 21317498 DOI: 10.1088/0957-4484/22/12/125501 |
0.307 |
|
| 2011 |
Xu F, Lu W, Zhu Y. Controlled 3D Buckling of Silicon Nanowires for Stretchable Electronics Acs Nano. 5: 672-678. PMID 21189041 DOI: 10.1021/Nn103189Z |
0.316 |
|
| 2011 |
Dattoli EN, Lu W. ITO nanowires and nanoparticles for transparent films Mrs Bulletin. 36: 782-788. DOI: 10.1557/Mrs.2011.212 |
0.332 |
|
| 2011 |
Hao XJ, Li HO, Tu T, Zhou C, Cao G, Guo GC, Guo GP, Fung WY, Ji Z, Lu W. Andreev tunneling enhanced by Coulomb oscillations in superconductor- semiconductor hybrid Ge/Si nanowire devices Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.195448 |
0.36 |
|
| 2011 |
Fung WY, Chen L, Lu W. Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions Applied Physics Letters. 99: 92108. DOI: 10.1063/1.3633347 |
0.348 |
|
| 2011 |
Chang T, Jo S, Kim K, Sheridan P, Gaba S, Lu W. Synaptic behaviors and modeling of a metal oxide memristive device Applied Physics A. 102: 857-863. DOI: 10.1007/S00339-011-6296-1 |
0.348 |
|
| 2010 |
Jo SH, Chang T, Ebong I, Bhadviya BB, Mazumder P, Lu W. Nanoscale memristor device as synapse in neuromorphic systems. Nano Letters. 10: 1297-301. PMID 20192230 DOI: 10.1021/Nl904092H |
0.34 |
|
| 2010 |
Kim K, Jo SH, Gaba S, Lu W. Nanoscale resistive memory with intrinsic diode characteristics and long endurance Applied Physics Letters. 96: 53106. DOI: 10.1063/1.3294625 |
0.343 |
|
| 2009 |
Lu W, Xiong Y, Hassanien A, Zhao W, Zheng M, Chen L. A scanning probe microscopy based assay for single-walled carbon nanotube metallicity. Nano Letters. 9: 1668-72. PMID 19271718 DOI: 10.1021/Nl900194J |
0.438 |
|
| 2009 |
Jo SH, Kim KH, Lu W. High-density crossbar arrays based on a Si memristive system. Nano Letters. 9: 870-874. PMID 19206536 DOI: 10.1021/Nl8037689 |
0.365 |
|
| 2009 |
Jo SH, Kim KH, Lu W. Programmable resistance switching in nanoscale two-terminal devices. Nano Letters. 9: 496-500. PMID 19113891 DOI: 10.1021/Nl803669S |
0.331 |
|
| 2009 |
Dattoli EN, Kim K, Fung WY, Choi S, Lu W. Radio-Frequency Operation of Transparent Nanowire Thin-Film Transistors Ieee Electron Device Letters. 30: 730-732. DOI: 10.1109/Led.2009.2021167 |
0.308 |
|
| 2008 |
Wan Q, Dattoli E, Lu W. Doping-dependent electrical characteristics of SnO2 nanowires. Small (Weinheim An Der Bergstrasse, Germany). 4: 451-4. PMID 18383191 DOI: 10.1002/Smll.200700753 |
0.366 |
|
| 2008 |
Dong Y, Yu G, McAlpine MC, Lu W, Lieber CM. Si/a-Si core/shell nanowires as nonvolatile crossbar switches. Nano Letters. 8: 386-91. PMID 18220442 DOI: 10.1021/Nl073224P |
0.737 |
|
| 2008 |
Jo SH, Lu W. CMOS compatible nanoscale nonvolatile resistance switching memory. Nano Letters. 8: 392-397. PMID 18217785 DOI: 10.1021/Nl073225H |
0.357 |
|
| 2008 |
Lu W, Xie P, Lieber CM. Nanowire transistor performance limits and applications Ieee Transactions On Electron Devices. 55: 2859-2876. DOI: 10.1109/Ted.2008.2005158 |
0.616 |
|
| 2008 |
Hayden O, Agarwal R, Lu W. Semiconductor nanowire devices Nano Today. 3: 12-22. DOI: 10.1016/S1748-0132(08)70061-6 |
0.475 |
|
| 2007 |
Lu W, Lieber CM. Nanoelectronics from the bottom up. Nature Materials. 6: 841-50. PMID 17972939 DOI: 10.1038/Nmat2028 |
0.547 |
|
| 2007 |
Lu W, Wang D, Chen L. Near-static dielectric polarization of individual carbon nanotubes. Nano Letters. 7: 2729-33. PMID 17705550 DOI: 10.1021/Nl071208M |
0.403 |
|
| 2007 |
Dattoli EN, Wan Q, Guo W, Chen Y, Pan X, Lu W. Fully transparent thin-film transistor devices based on SnO2 nanowires. Nano Letters. 7: 2463-9. PMID 17595151 DOI: 10.1021/Nl0712217 |
0.39 |
|
| 2007 |
Dattoli E, Wan Q, Lu W. Versatile Metal Oxide Nanowire Devices Achieved via Controlled Doping Mrs Proceedings. 1018. DOI: 10.1557/Proc-1018-Ee11-06 |
0.393 |
|
| 2007 |
Jo SH, Lu W. Nonvolatile resistive switching devices based on nanoscale metal/amorphous silicon/crystalline silicon junctions Mrs Proceedings. 997. DOI: 10.1557/Proc-0997-I04-05 |
0.378 |
|
| 2007 |
Wan Q, Dattoli EN, Lu W. Transparent metallic Sb-doped SnO2 nanowires Applied Physics Letters. 90: 222107. DOI: 10.1063/1.2743746 |
0.367 |
|
| 2006 |
Wan Q, Dattoli EN, Fung WY, Guo W, Chen Y, Pan X, Lu W. High-performance transparent conducting oxide nanowires. Nano Letters. 6: 2909-15. PMID 17163729 DOI: 10.1021/Nl062213D |
0.368 |
|
| 2006 |
Xiang J, Lu W, Hu Y, Wu Y, Yan H, Lieber CM. Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature. 441: 489-93. PMID 16724062 DOI: 10.1038/Nature04796 |
0.733 |
|
| 2005 |
Lu W, Xiang J, Timko BP, Wu Y, Lieber CM. One-dimensional hole gas in germanium/silicon nanowire heterostructures. Proceedings of the National Academy of Sciences of the United States of America. 102: 10046-51. PMID 16006507 DOI: 10.1073/Pnas.0504581102 |
0.739 |
|
| 2005 |
Zhong Z, Fang Y, Lu W, Lieber CM. Coherent single charge transport in molecular-scale silicon nanowires. Nano Letters. 5: 1143-6. PMID 15943458 DOI: 10.1021/Nl050783S |
0.622 |
|
| 2004 |
Wu Y, Xiang J, Yang C, Lu W, Lieber CM. Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures. Nature. 430: 61-5. PMID 15229596 DOI: 10.1038/Nature02674 |
0.659 |
|
| 2004 |
Zheng G, Lu W, Jin S, Lieber CM. Synthesis and fabrication of high-performance n-type silicon nanowire transistors Advanced Materials. 16: 1890-1893. DOI: 10.1002/Adma.200400472 |
0.651 |
|
| 2003 |
Lu W, Ji Z, Pfeiffer L, West KW, Rimberg AJ. Real-time detection of electron tunnelling in a quantum dot. Nature. 423: 422-5. PMID 12761544 DOI: 10.1038/Nature01642 |
0.656 |
|
| 2002 |
Lu W, Rimberg AJ, Maranowski KD. Superconducting single-electron transistor coupled to a locally tunable electromagnetic environment Applied Physics Letters. 81: 4976-4978. DOI: 10.1063/1.1530731 |
0.655 |
|
| 1999 |
Liu J, Casavant MJ, Cox M, Walters DA, Boul P, Lu W, Rimberg AJ, Smith KA, Colbert DT, Smalley RE. Controlled deposition of individual single-walled carbon nanotubes on chemically functionalized templates Chemical Physics Letters. 303: 125-129. DOI: 10.1016/S0009-2614(99)00209-2 |
0.698 |
|
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