Jubin Nathawat - Publications

Affiliations: 
State University of New York, Buffalo, Buffalo, NY, United States 
Area:
Condensed Matter Physics, Hot Carrier Transportation

9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Nathawat J, Mansaray I, Sakanashi K, Wada N, Randle MD, Yin S, He K, Arabchigavkani N, Dixit R, Barut B, Zhao M, Ramamoorthy H, Somphonsane R, Kim GH, Watanabe K, et al. Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene. Nature Communications. 14: 1507. PMID 36932096 DOI: 10.1038/s41467-023-37292-4  0.324
2020 Somphonsane R, Ramamoorthy H, He G, Nathawat J, Yin S, Kwan CP, Arabchigavkani N, Barut B, Zhao M, Jin Z, Fransson J, Bird JP. Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence. Scientific Reports. 10: 5611. PMID 32221340 DOI: 10.1038/S41598-020-62313-3  0.371
2019 Nathawat J, Zhao M, Kwan CP, Yin S, Arabchigavkani N, Randle M, Ramamoorthy H, He G, Somphonsane R, Matsumoto N, Sakanashi K, Kida M, Aoki N, Jin Z, Kim Y, et al. Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping. Acs Omega. 4: 4082-4090. PMID 31459617 DOI: 10.1021/acsomega.8b03259  0.346
2019 Kwan C, Street M, Mahmood A, Echtenkamp W, Randle M, He K, Nathawat J, Arabchigavkani N, Barut B, Yin S, Dixit R, Singisetti U, Binek C, Bird JP. Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates Aip Advances. 9: 055018. DOI: 10.1063/1.5087832  0.326
2018 Randle M, Lipatov A, Kumar A, Kwan CP, Nathawat J, Barut B, Yin S, He K, Arabchigavkani N, Dixit R, Komesu T, Avila J, Asensio MC, Dowben PA, Sinitskii A, et al. Gate-Controlled Metal-Insulator Transition in TiS Nanowire Field-Effect Transistors. Acs Nano. PMID 30586504 DOI: 10.1021/Acsnano.8B08260  0.37
2017 He G, Nathawat J, Kwan CP, Ramamoorthy H, Somphonsane R, Zhao M, Ghosh K, Singisetti U, Perea-López N, Zhou C, Elías AL, Terrones M, Gong Y, Zhang X, Vajtai R, et al. Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs. Scientific Reports. 7: 11256. PMID 28900169 DOI: 10.1038/S41598-017-11647-6  0.366
2017 Somphonsane R, Ramamoorthy H, He G, Nathawat J, Kwan CP, Arabchigavkani N, Lee YH, Fransson J, Bird JP. Evaluating the Sources of Graphene's Resistivity Using Differential Conductance. Scientific Reports. 7: 10317. PMID 28871185 DOI: 10.1038/S41598-017-10367-1  0.382
2017 Ramamoorthy H, Somphonsane R, Radice J, He G, Nathawat J, Kwan C, Zhao M, Bird JP. Probing charge trapping and joule heating in graphene field-effect transistors by transient pulsing Semiconductor Science and Technology. 32: 084005. DOI: 10.1088/1361-6641/Aa7Ba3  0.363
2016 He G, Ramamoorthy H, Kwan CP, Lee YH, Nathawat J, Somphonsane R, Matsunaga M, Higuchi A, Yamanaka T, Aoki N, Gong Y, Zhang X, Vajtai R, Ajayan PM, Bird JP. Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors. Nano Letters. PMID 27680095 DOI: 10.1021/Acs.Nanolett.6B02905  0.346
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