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Deji Akinwande, Ph.D. - Publications

Affiliations: 
2009 Stanford University, Palo Alto, CA 
 2010- Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Website:
https://sites.utexas.edu/nano/
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Ghomi S, Martella C, Lee Y, Chang PH, Targa P, Serafini A, Codegoni D, Massetti C, Gharedaghi S, Lamperti A, Grazianetti C, Akinwande D, Molle A. Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2406703. PMID 39352313 DOI: 10.1002/advs.202406703  0.302
2024 Han S, Liu J, Pérez-Jiménez AI, Lei Z, Yan P, Zhang Y, Guo X, Bai R, Hu S, Wu X, Zhang DW, Sun Q, Akinwande D, Yu ET, Ji L. Visualizing and Controlling of Photogenerated Electron-Hole Pair Separation in Monolayer WS Nanobubbles under Piezoelectric Field. Acs Applied Materials & Interfaces. PMID 38952105 DOI: 10.1021/acsami.4c00092  0.356
2024 Yang SJ, Liang L, Lee Y, Gu Y, Fatheema J, Kutagulla S, Kim D, Kim M, Kim S, Akinwande D. Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer. Acs Nano. PMID 38226861 DOI: 10.1021/acsnano.3c10068  0.631
2023 Li X, Zhou P, Hu X, Rivers E, Watanabe K, Taniguchi T, Akinwande D, Friedman JS, Incorvia JAC. Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe Thin Film Transistors. Acs Nano. PMID 37377371 DOI: 10.1021/acsnano.3c03932  0.365
2023 Fatima S, Gu Y, Yang SJ, Kutagulla S, Rizwan S, Akinwande D. Comparative Study between Sulfurized MoS from Molybdenum and Molybdenum Trioxide Precursors for Thin-Film Device Applications. Acs Applied Materials & Interfaces. PMID 36939015 DOI: 10.1021/acsami.3c00824  0.322
2023 Yang SJ, Dahan MM, Levit O, Makal F, Peterson P, Alikpala J, Nibhanupudi ST, Luth CJ, Banerjee SK, Kim M, Roessler A, Yalon E, Akinwande D. Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications. Nano Letters. PMID 36662611 DOI: 10.1021/acs.nanolett.2c03565  0.638
2022 Kim JS, Maity N, Kim M, Fu S, Juneja R, Singh A, Akinwande D, Lin JF. Strain-Modulated Interlayer Charge and Energy Transfers in MoS/WS Heterobilayer. Acs Applied Materials & Interfaces. 14: 46841-46849. PMID 36195978 DOI: 10.1021/acsami.2c10982  0.672
2022 Alam MH, Chowdhury S, Roy A, Wu X, Ge R, Rodder MA, Chen J, Lu Y, Stern C, Houben L, Chrostowski R, Burlison SR, Yang SJ, Serna MI, Dodabalapur A, ... ... Akinwande D, et al. Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide. Acs Nano. PMID 35188367 DOI: 10.1021/acsnano.1c07705  0.302
2020 Hus SM, Ge R, Chen PA, Liang L, Donnelly GE, Ko W, Huang F, Chiang MH, Li AP, Akinwande D. Observation of single-defect memristor in an MoS atomic sheet. Nature Nanotechnology. PMID 33169008 DOI: 10.1038/s41565-020-00789-w  0.303
2020 Wu X, Ge R, Akinwande D, Lee JC. Understanding of Multiple Resistance States by Current Sweeping in MoS2-based Non-volatile Memory Devices. Nanotechnology. PMID 32647100 DOI: 10.1088/1361-6528/aba46a  0.309
2019 Akinwande D, Huyghebaert C, Wang CH, Serna MI, Goossens S, Li LJ, Wong HP, Koppens FHL. Graphene and two-dimensional materials for silicon technology. Nature. 573: 507-518. PMID 31554977 DOI: 10.1038/s41586-019-1573-9  0.613
2019 Wiesner M, Roberts RH, Lin JF, Akinwande D, Hesjedal T, Duffy LB, Wang S, Song Y, Jenczyk J, Jurga S, Mroz B. The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator BiTe. Scientific Reports. 9: 6147. PMID 30992498 DOI: 10.1038/S41598-019-42598-9  0.481
2019 Wu D, Li W, Rai A, Wu X, Movva HCP, Yogeesh MN, Chu Z, Banerjee SK, Akinwande D, Lai K. Visualization of Local Conductance in MoS/WSe Heterostructure Transistors. Nano Letters. PMID 30779591 DOI: 10.1021/Acs.Nanolett.8B05159  0.759
2018 Zhu W, Liang L, Roberts RH, Lin JF, Akinwande D. Anisotropic Electron-Phonon Interactions in Angle Resolved Raman Study of Strained Black Phosphorus. Acs Nano. PMID 30507160 DOI: 10.1021/Acsnano.8B06940  0.462
2018 Molle A, Grazianetti C, Tao L, Taneja D, Alam MH, Akinwande D. Silicene, silicene derivatives, and their device applications. Chemical Society Reviews. PMID 30065980 DOI: 10.1039/c8cs00338f  0.361
2018 Kim M, Ge R, Wu X, Lan X, Tice J, Lee JC, Akinwande D. Zero-static power radio-frequency switches based on MoS atomristors. Nature Communications. 9: 2524. PMID 29955064 DOI: 10.1038/s41467-018-04934-x  0.675
2017 Ge R, Wu X, Kim M, Shi J, Sonde S, Tao L, Zhang Y, Lee JC, Akinwande D. Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides. Nano Letters. PMID 29236504 DOI: 10.1021/Acs.Nanolett.7B04342  0.665
2017 Grubb PM, Subbaraman H, Park S, Akinwande D, Chen RT. Inkjet Printing of High Performance Transistors with Micron Order Chemically Set Gaps. Scientific Reports. 7: 1202. PMID 28446781 DOI: 10.1038/s41598-017-01391-2  0.306
2017 Molle A, Goldberger J, Houssa M, Xu Y, Zhang SC, Akinwande D. Buckled two-dimensional Xene sheets. Nature Materials. PMID 28092688 DOI: 10.1038/Nmat4802  0.307
2016 Wu Z, Kelp G, Yogeesh MN, Li W, McNicholas KM, Briggs A, Rajeeva BB, Akinwande D, Bank SR, Shvets G, Zheng Y. Dual-band moiré metasurface patches for multifunctional biomedical applications. Nanoscale. PMID 27778012 DOI: 10.1039/C6Nr06608A  0.739
2016 Illarionov YY, Waltl M, Rzepa G, Kim JS, Kim S, Dodabalapur A, Akinwande D, Grasser T. Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors. Acs Nano. PMID 27704779 DOI: 10.1021/Acsnano.6B04814  0.303
2016 Wu D, Li X, Luan L, Wu X, Li W, Yogeesh MN, Ghosh R, Chu Z, Akinwande D, Niu Q, Lai K. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors. Proceedings of the National Academy of Sciences of the United States of America. PMID 27444021 DOI: 10.1073/Pnas.1605982113  0.758
2016 Pandey T, Nayak AP, Liu J, Moran ST, Kim JS, Li LJ, Lin JF, Akinwande D, Singh AK. Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure. Small (Weinheim An Der Bergstrasse, Germany). PMID 27323330 DOI: 10.1002/smll.201600808  0.455
2016 Zhu W, Park S, Yogeesh MN, McNicholas KM, Bank SR, Akinwande D. Black Phosphorus Flexible Thin Film Transistors at GHz Frequencies. Nano Letters. PMID 26977902 DOI: 10.1021/Acs.Nanolett.5B04768  0.763
2015 Chang HY, Yogeesh MN, Ghosh R, Rai A, Sanne A, Yang S, Lu N, Banerjee SK, Akinwande D. Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime. Advanced Materials (Deerfield Beach, Fla.). PMID 26707841 DOI: 10.1002/Adma.201504309  0.76
2015 Lin L, Peng X, Mao Z, Li W, Yogeesh MN, Rajeeva BB, Perillo EP, Dunn AK, Akinwande D, Zheng Y. Bubble-Pen Lithography. Nano Letters. PMID 26678845 DOI: 10.1021/Acs.Nanolett.5B04524  0.721
2015 Nayak AP, Yuan Z, Cao B, Liu J, Wu J, Moran ST, Li T, Akinwande D, Jin CQ, Lin JF. Pressure-Modulated Conductivity, Carrier Density, and Mobility of Multilayered Tungsten Disulfide. Acs Nano. PMID 26258661 DOI: 10.1021/Acsnano.5B03295  0.554
2015 Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S. Radio Frequency Transistors and Circuits Based on CVD MoS2. Nano Letters. 15: 5039-45. PMID 26134588 DOI: 10.1021/Acs.Nanolett.5B01080  0.765
2015 Kim W, Li C, Chekurov N, Arpiainen S, Akinwande D, Lipsanen H, Riikonen J. All-Graphene Three-Terminal-Junction Field-Effect Devices as Rectifiers and Inverters. Acs Nano. 9: 5666-74. PMID 25961680 DOI: 10.1021/nn507199n  0.319
2015 Kim JS, Liu Y, Zhu W, Kim S, Wu D, Tao L, Dodabalapur A, Lai K, Akinwande D. Toward air-stable multilayer phosphorene thin-films and transistors. Scientific Reports. 5: 8989. PMID 25758437 DOI: 10.1038/Srep08989  0.327
2015 Zhu W, Yogeesh MN, Yang S, Aldave SH, Kim JS, Sonde S, Tao L, Lu N, Akinwande D. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator. Nano Letters. 15: 1883-90. PMID 25715122 DOI: 10.1021/Nl5047329  0.771
2015 Tao L, Cinquanta E, Chiappe D, Grazianetti C, Fanciulli M, Dubey M, Molle A, Akinwande D. Silicene field-effect transistors operating at room temperature. Nature Nanotechnology. 10: 227-31. PMID 25643256 DOI: 10.1038/nnano.2014.325  0.378
2015 Nayak AP, Pandey T, Voiry D, Liu J, Moran ST, Sharma A, Tan C, Chen CH, Li LJ, Chhowalla M, Lin JF, Singh AK, Akinwande D. Pressure-dependent optical and vibrational properties of monolayer molybdenum disulfide. Nano Letters. 15: 346-53. PMID 25486455 DOI: 10.1021/Nl5036397  0.513
2014 Nayak AP, Bhattacharyya S, Zhu J, Liu J, Wu X, Pandey T, Jin C, Singh AK, Akinwande D, Lin JF. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide. Nature Communications. 5: 3731. PMID 24806118 DOI: 10.1038/ncomms4731  0.509
2013 Lee J, Ha TJ, Li H, Parrish KN, Holt M, Dodabalapur A, Ruoff RS, Akinwande D. 25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets. Acs Nano. 7: 7744-50. PMID 23941439 DOI: 10.1021/Nn403487Y  0.306
2013 Chang HY, Yang S, Lee J, Tao L, Hwang WS, Jena D, Lu N, Akinwande D. High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. Acs Nano. 7: 5446-52. PMID 23668386 DOI: 10.1021/Nn401429W  0.319
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