Alexei Gruverman - Publications

Affiliations: 
Physics & Astronomy The University of Nebraska - Lincoln, Lincoln, NE 
Area:
General Physics, Condensed Matter Physics, Materials Science Engineering
Website:
http://unlcms.unl.edu/cas/physics/gruverman/node/1

205 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Lu H, Kim DJ, Aramberri H, Holzer M, Buragohain P, Dutta S, Schroeder U, Deshpande V, Íñiguez J, Gruverman A, Dubourdieu C. Electrically induced cancellation and inversion of piezoelectricity in ferroelectric HfZrO. Nature Communications. 15: 860. PMID 38287021 DOI: 10.1038/s41467-024-44690-9  0.32
2022 Tikhonov Y, Maguire JR, McCluskey CJ, McConville JPV, Kumar A, Lu H, Meier D, Razumnaya A, Gregg JM, Gruverman A, Vinokur VM, Luk'yanchuk I. Polarisation Topology at the Nominally Charged Domain Walls in Uniaxial Ferroelectrics. Advanced Materials (Deerfield Beach, Fla.). e2203028. PMID 36114716 DOI: 10.1002/adma.202203028  0.318
2022 Yun Y, Buragohain P, Li M, Ahmadi Z, Zhang Y, Li X, Wang H, Li J, Lu P, Tao L, Wang H, Shield JE, Tsymbal EY, Gruverman A, Xu X. Intrinsic ferroelectricity in Y-doped HfO thin films. Nature Materials. PMID 35761058 DOI: 10.1038/s41563-022-01282-6  0.315
2022 McCluskey CJ, Colbear MG, McConville JPV, McCartan SJ, Maguire JR, Conroy M, Moore K, Harvey A, Trier F, Bangert U, Gruverman A, Bibes M, Kumar A, McQuaid RGP, Gregg JM. Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature. Advanced Materials (Deerfield Beach, Fla.). e2204298. PMID 35733393 DOI: 10.1002/adma.202204298  0.332
2021 Zhang Z, Hsu SL, Stoica VA, Paik H, Parsonnet E, Qualls A, Wang J, Xie L, Kumari M, Das S, Leng Z, McBriarty M, Proksch R, Gruverman A, Schlom DG, et al. Epitaxial Ferroelectric Hf Zr O with Metallic Pyrochlore Oxide Electrodes. Advanced Materials (Deerfield Beach, Fla.). e2006089. PMID 33533113 DOI: 10.1002/adma.202006089  0.312
2021 Kondovych S, Gruverman A, Luk’yanchuk I. Tip-induced domain protrusion in ferroelectric films with in-plane polarization Journal of Applied Physics. 129: 054103. DOI: 10.1063/5.0035950  0.361
2020 McConville JPV, Lu H, Wang B, Tan Y, Cochard C, Conroy M, Moore K, Harvey A, Bangert U, Chen LQ, Gruverman A, Gregg JM. Ferroelectric Domain Wall Memristor. Advanced Functional Materials. 30: 2000109. PMID 32684905 DOI: 10.1002/Adfm.202000109  0.427
2020 Chaudhary P, Lu H, Lipatov A, Ahmadi Z, Mcconville J, Sokolov A, Shield J, Sinitskii A, Gregg JM, Gruverman A. Low-Voltage Domain-Wall LiNbO3 Memristors. Nano Letters. PMID 32574058 DOI: 10.1021/Acs.Nanolett.0C01836  0.393
2020 Conroy MA, Moore K, O'Connell E, Jones L, Downing C, Whamore R, Gruverman A, Gregg M, Bangert U. Probing the dynamics of topologically protected charged ferroelectric domain walls with the electron beam at the atomic scale Microscopy and Microanalysis. 1-4. DOI: 10.1017/S1431927620023594  0.318
2020 Wang B, Lu H, Bark CW, Eom C, Gruverman A, Chen L. Mechanically induced ferroelectric switching in BaTiO3 thin films Acta Materialia. 193: 151-162. DOI: 10.1016/J.Actamat.2020.04.032  0.447
2020 Bak O, Holstad TS, Tan Y, Lu H, Evans DM, Hunnestad KA, Wang B, McConville JPV, Becker P, Bohatý L, Lukyanchuk I, Vinokur VM, Helvoort ATJv, Gregg JM, Chen LQ, ... ... Gruverman A, et al. Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate Advanced Functional Materials. 30: 2000284. DOI: 10.1002/Adfm.202000284  0.361
2019 Luo ZD, Xia X, Yang MM, Wilson NR, Gruverman A, Alexe M. Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors. Acs Nano. PMID 31887010 DOI: 10.1021/Acsnano.9B07687  0.314
2019 Lu H, Tan Y, McConville JPV, Ahmadi Z, Wang B, Conroy M, Moore K, Bangert U, Shield JE, Chen LQ, Gregg JM, Gruverman A. Electrical Tunability of Domain Wall Conductivity in LiNbO Thin Films. Advanced Materials (Deerfield Beach, Fla.). e1902890. PMID 31588637 DOI: 10.1002/Adma.201902890  0.459
2019 Buragohain P, Erickson A, Kariuki P, Mittmann T, Richter C, Lomenzo P, Lu H, Schenk T, Mikolajick T, Schroeder U, Gruverman A. Fluid imprint and inertial switching in ferroelectric La:HfO2 capacitors. Acs Applied Materials & Interfaces. PMID 31460741 DOI: 10.1021/Acsami.9B11146  0.432
2019 Zhang Y, Lu H, Yan X, Cheng X, Xie L, Aoki T, Li L, Heikes C, Lau SP, Schlom DG, Chen L, Gruverman A, Pan X. Intrinsic Conductance of Domain Walls in BiFeO. Advanced Materials (Deerfield Beach, Fla.). e1902099. PMID 31353633 DOI: 10.1002/Adma.201902099  0.41
2019 Gruverman A, Alexe M, Meier D. Piezoresponse force microscopy and nanoferroic phenomena. Nature Communications. 10: 1661. PMID 30971688 DOI: 10.1038/S41467-019-09650-8  0.322
2019 Lipatov A, Li T, Vorobeva N, Sinitskii A, Gruverman A. Nanodomain Engineering for Programmable Ferroelectric Devices. Nano Letters. PMID 30943040 DOI: 10.1021/Acs.Nanolett.9B00673  0.36
2019 Abuwasib M, Lee H, Lee J, Eom C, Gruverman A, Singisetti U. Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance–Voltage (${C}$ –${V}$ ), Current–Voltage (${I}$ –${V}$ ), and High- Frequency Measurements Ieee Transactions On Electron Devices. 66: 2186-2191. DOI: 10.1109/Ted.2019.2904019  0.312
2019 Conroy M, Moore K, O'Connell E, McConville J, Lu H, Chaudhary P, Lipatov A, Sinitskii A, Gruverman A, Gregg J, Bangert U. Atomic-Scale Characterization of Ferro-Electric Domains in Lithium Niobate-revealing the Electronic Properties of Domain Walls Microscopy and Microanalysis. 25: 576-577. DOI: 10.1017/S1431927619003611  0.378
2018 Lipatov A, Loes MJ, Lu H, Dai J, Patoka P, Vorobeva NS, Muratov DS, Ulrich G, Kästner B, Hoehl A, Ulm G, Zeng XC, Rühl E, Gruverman A, Dowben PA, et al. Quasi-1D TiS Nanoribbons: Mechanical Exfoliation and Thickness-Dependent Raman Spectroscopy. Acs Nano. PMID 30499656 DOI: 10.1021/Acsnano.8B07703  0.311
2018 You L, Liu F, Li H, Hu Y, Zhou S, Chang L, Zhou Y, Fu Q, Yuan G, Dong S, Fan HJ, Gruverman A, Liu Z, Wang J. In-Plane Ferroelectricity in Thin Flakes of Van der Waals Hybrid Perovskite. Advanced Materials (Deerfield Beach, Fla.). e1803249. PMID 30334281 DOI: 10.1002/Adma.201803249  0.388
2018 Zhang Y, Lu H, Xie L, Yan X, Paudel TR, Kim J, Cheng X, Wang H, Heikes C, Li L, Xu M, Schlom DG, Chen LQ, Wu R, Tsymbal EY, ... Gruverman A, et al. Publisher Correction: Anisotropic polarization-induced conductance at a ferroelectric-insulator interface. Nature Nanotechnology. PMID 30291315 DOI: 10.1038/S41565-018-0295-8  0.307
2018 Zhang Y, Lu H, Xie L, Yan X, Paudel TR, Kim J, Cheng X, Wang H, Heikes C, Li L, Xu M, Schlom DG, Chen LQ, Wu R, Tsymbal EY, ... Gruverman A, et al. Anisotropic polarization-induced conductance at a ferroelectric-insulator interface. Nature Nanotechnology. PMID 30250247 DOI: 10.1038/S41565-018-0259-Z  0.439
2018 Chen B, Li T, Dong Q, Mosconi E, Song J, Chen Z, Deng Y, Liu Y, Ducharme S, Gruverman A, Angelis F, Huang J. Large electrostrictive response in lead halide perovskites. Nature Materials. PMID 30250177 DOI: 10.1038/S41563-018-0170-X  0.354
2018 Li T, Lipatov A, Lu H, Lee H, Lee JW, Torun E, Wirtz L, Eom CB, Íñiguez J, Sinitskii A, Gruverman A. Optical control of polarization in ferroelectric heterostructures. Nature Communications. 9: 3344. PMID 30131577 DOI: 10.1038/S41467-018-05640-4  0.403
2018 Lipatov A, Lu H, Alhabeb M, Anasori B, Gruverman A, Gogotsi Y, Sinitskii A. Elastic properties of 2D TiCT MXene monolayers and bilayers. Science Advances. 4: eaat0491. PMID 29922719 DOI: 10.1126/Sciadv.Aat0491  0.316
2018 Wu WQ, Wang Q, Fang Y, Shao Y, Tang S, Deng Y, Lu H, Liu Y, Li T, Yang Z, Gruverman A, Huang J. Molecular doping enabled scalable blading of efficient hole-transport-layer-free perovskite solar cells. Nature Communications. 9: 1625. PMID 29691390 DOI: 10.1038/S41467-018-04028-8  0.324
2018 Chouprik AA, Zakharchenko S, Spiridonov M, Zarubin S, Chernikova A, Kirtaev R, Buragohain P, Gruverman A, Zenkevich A, Negrov D. Ferroelectricity in HfZrOthin films: a microscopic study of the polarization switching phenomenon and field-induced phase transformations. Acs Applied Materials & Interfaces. PMID 29464951 DOI: 10.1021/Acsami.7B17482  0.493
2018 Buragohain P, Richter C, Schenk T, Lu H, Mikolajick T, Schroeder U, Gruverman A. Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors Applied Physics Letters. 112: 222901. DOI: 10.1063/1.5030562  0.458
2018 Sharma P, Huang Z, Li M, Li C, Hu S, Lee H, Lee J, Eom C, Pennycook SJ, Seidel J, Ariando, Gruverman A. Oxygen Stoichiometry Effect on Polar Properties of LaAlO3/SrTiO3 Advanced Functional Materials. 28: 1707159. DOI: 10.1002/Adfm.201707159  0.451
2017 Lu H, Lee D, Klyukin K, Tao L, Wang B, Lee H, Lee JW, Paudel TR, Chen LQ, Tsymbal EY, Alexandrov V, Eom CB, Gruverman A. Tunneling Hot Spots in Ferroelectric SrTiO3. Nano Letters. PMID 29236501 DOI: 10.1021/Acs.Nanolett.7B04444  0.448
2017 Zhang Q, Xie L, Liu G, Prokhorenko S, Nahas Y, Pan X, Bellaiche L, Gruverman A, Valanoor N. Nanoscale Bubble Domains and Topological Transitions in Ultrathin Ferroelectric Films. Advanced Materials (Deerfield Beach, Fla.). PMID 29064154 DOI: 10.1002/Adma.201702375  0.464
2017 Zubko P, Lu H, Bark CW, Martí X, Santiso J, Eom CB, Catalan G, Gruverman A. On the persistence of polar domains in ultrathin ferroelectric capacitors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 29: 284001. PMID 28593933 DOI: 10.1088/1361-648X/Aa73C3  0.505
2017 Seyedhosseini E, Romanyuk K, Vasileva D, Vasilev S, Nuraeva A, Zelenovskiy P, Ivanov MS, Morozovska AN, Shur VY, Lu H, Gruverman A, Kholkin AL. Self-assembly of organic ferroelectrics by evaporative dewetting: a case of β-glycine. Acs Applied Materials & Interfaces. PMID 28534399 DOI: 10.1021/Acsami.7B02952  0.33
2017 Strelcov E, Dong Q, Li T, Chae J, Shao Y, Deng Y, Gruverman A, Huang J, Centrone A. CH3NH3PbI3 perovskites: Ferroelasticity revealed. Science Advances. 3: e1602165. PMID 28439542 DOI: 10.1126/Sciadv.1602165  0.419
2017 Yuan Y, Li T, Wang Q, Xing J, Gruverman A, Huang J. Anomalous photovoltaic effect in organic-inorganic hybrid perovskite solar cells. Science Advances. 3: e1602164. PMID 28345043 DOI: 10.1126/Sciadv.1602164  0.366
2017 Guo R, Wang Y, Yoong HY, Chai J, Wang H, Lin W, Chen S, Yan X, Venkatesan T, Ariando, Gruverman A, Wu Y, Chen J. Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions. Acs Applied Materials & Interfaces. PMID 28165212 DOI: 10.1021/Acsami.6B15564  0.318
2017 Li T, Sharma P, Lipatov A, Lee H, Lee JW, Zhuravlev MY, Paudel TR, Genenko YA, Eom CB, Tsymbal EY, Sinitskii A, Gruverman A. Polarization-mediated modulation of electronic and transport properties of hybrid MoS2/BaTiO3/SrRuO3 tunnel junctions. Nano Letters. PMID 28094991 DOI: 10.1021/Acs.Nanolett.6B04247  0.567
2017 Abuwasib M, Lee J, Lee H, Eom C, Gruverman A, Singisetti U. Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 021803. DOI: 10.1116/1.4978519  0.322
2017 Chang S, Naeemi A, Nikonov DE, Gruverman A. Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.024005  0.383
2017 Scott JF, Hershkovitz A, Ivry Y, Lu H, Gruverman A, Gregg J. Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation Applied Physics Reviews. 4: 41104. DOI: 10.1063/1.5005994  0.439
2017 Lu H, Liu S, Ye Z, Yasui S, Funakubo H, Rappe AM, Gruverman A. Asymmetry in mechanical polarization switching Applied Physics Letters. 110: 222903. DOI: 10.1063/1.4983381  0.473
2017 Ng K, Hillenius SJ, Gruverman A. Transient nature of negative capacitance in ferroelectric field-effect transistors Solid State Communications. 265: 12-14. DOI: 10.1016/J.Ssc.2017.07.020  0.336
2017 Lipatov A, Fursina A, Vo TH, Sharma P, Gruverman A, Sinitskii A. Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors Advanced Electronic Materials. 3: 1700020. DOI: 10.1002/Aelm.201700020  0.501
2016 Lu H, Wang B, Li T, Lipatov A, Lee H, Rajapitamahuni A, Xu R, Hong X, Farokhipoor S, Martin LW, Eom CB, Chen LQ, Sinitskii A, Gruverman A. Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes. Nano Letters. PMID 27662071 DOI: 10.1021/Acs.Nanolett.6B02963  0.471
2016 Kim DJ, Connell JG, Seo SS, Gruverman A. Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films. Nanotechnology. 27: 155705. PMID 26933770 DOI: 10.1088/0957-4484/27/15/155705  0.469
2016 Chernikova A, Kozodaev M, Markeev A, Negrov D, Spiridonov M, Zarubin S, Bak O, Buragohain P, Lu H, Suvorova E, Gruverman A, Zenkevich A. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si. Acs Applied Materials & Interfaces. PMID 26931409 DOI: 10.1021/Acsami.5B11653  0.383
2016 Lee H, Kim TH, Patzner JJ, Lu H, Lee JW, Zhou H, Chang W, Mahanthappa MK, Tsymbal EY, Gruverman A, Eom CB. Imprint Control of BaTiO3 Thin Films via Chemically Induced Surface Polarization Pinning. Nano Letters. 16: 2400-6. PMID 26901570 DOI: 10.1021/Acs.Nanolett.5B05188  0.428
2016 Nakagawa Y, Hashizume Y, Nakajima T, Gruverman A, Okamura S. Domain switching kinetics in vinylidene fluoride/tetrafluoroethylene copolymer thin films Japanese Journal of Applied Physics. 55: 5. DOI: 10.7567/Jjap.55.10Ta12  0.432
2016 Poddar S, Lu H, Song J, Goit O, Valloppilly S, Gruverman A, Ducharme S. Fabrication of diisopropylammonium bromide aligned microcrystals with in-plane uniaxial polarization Journal of Physics D: Applied Physics. 49: 505305. DOI: 10.1088/0022-3727/49/50/505305  0.428
2016 Jiang X, Lu H, Yin Y, Zhang X, Wang X, Yu L, Ahmadi Z, Costa PS, Dichiara AD, Cheng X, Gruverman A, Enders A, Xu X. Room temperature ferroelectricity in continuous croconic acid thin films Applied Physics Letters. 109. DOI: 10.1063/1.4962278  0.427
2016 Scott JF, Evans DM, Gregg JM, Gruverman A. Hydrodynamics of domain walls in ferroelectrics and multiferroics: Impact on memory devices Applied Physics Letters. 109. DOI: 10.1063/1.4959996  0.39
2016 Abuwasib M, Lu H, Li T, Buragohain P, Lee H, Eom CB, Gruverman A, Singisetti U. Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions Applied Physics Letters. 108. DOI: 10.1063/1.4947020  0.356
2016 Shao Y, Fang Y, Li T, Wang Q, Dong Q, Deng Y, Yuan Y, Wei H, Wang M, Gruverman A, Shield J, Huang J. Grain boundary dominated ion migration in polycrystalline organic-inorganic halide perovskite films Energy and Environmental Science. 9: 1752-1759. DOI: 10.1039/C6Ee00413J  0.302
2016 Guo R, Shen L, Wang H, Lim Z, Lu W, Yang P, Ariando, Gruverman A, Venkatesan T, Feng YP, Chen J. Tailoring Self-Polarization of BaTiO3 Thin Films by Interface Engineering and Flexoelectric Effect Advanced Materials Interfaces. 3: 1600737. DOI: 10.1002/Admi.201600737  0.358
2015 Song J, Lu H, Li S, Tan L, Gruverman A, Ducharme S. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography. Nanotechnology. 27: 015302. PMID 26597076 DOI: 10.1088/0957-4484/27/1/015302  0.334
2015 Lu H, Li T, Poddar S, Goit O, Lipatov A, Sinitskii A, Ducharme S, Gruverman A. Statics and Dynamics of Ferroelectric Domains in Diisopropylammonium Bromide. Advanced Materials (Deerfield Beach, Fla.). PMID 26479268 DOI: 10.1002/Adma.201504019  0.404
2015 Lee D, Lu H, Gu Y, Choi SY, Li SD, Ryu S, Paudel TR, Song K, Mikheev E, Lee S, Stemmer S, Tenne DA, Oh SH, Tsymbal EY, Wu X, ... ... Gruverman A, et al. Emergence of room-temperature ferroelectricity at reduced dimensions. Science (New York, N.Y.). 349: 1314-1317. PMID 26383947 DOI: 10.1126/Science.Aaa6442  0.421
2015 Lipatov A, Sharma P, Gruverman A, Sinitskii A. Optoelectrical Molybdenum Disulfide (MoS2)-Ferroelectric Memories. Acs Nano. 9: 8089-98. PMID 26222209 DOI: 10.1021/Acsnano.5B02078  0.449
2015 Nguyen A, Sharma P, Scott T, Preciado E, Klee V, Sun D, Lu IH, Barroso D, Kim S, Shur VY, Akhmatkhanov AR, Gruverman A, Bartels L, Dowben PA. Toward Ferroelectric Control of Monolayer MoS2. Nano Letters. 15: 3364-9. PMID 25909996 DOI: 10.1021/Acs.Nanolett.5B00687  0.598
2015 Sharma P, Ryu S, Burton JD, Paudel TR, Bark CW, Huang Z, Ariando, Tsymbal EY, Catalan G, Eom CB, Gruverman A. Mechanical Tuning of LaAlO3/SrTiO3 Interface Conductivity. Nano Letters. 15: 3547-51. PMID 25860855 DOI: 10.1021/Acs.Nanolett.5B01021  0.472
2015 Choi YY, Sharma P, Phatak C, Gosztola DJ, Liu Y, Lee J, Lee B, Li J, Gruverman A, Ducharme S, Hong S. Enhancement of local piezoresponse in polymer ferroelectrics via nanoscale control of microstructure. Acs Nano. 9: 1809-19. PMID 25646972 DOI: 10.1021/Nn5067232  0.483
2015 Xiao Z, Yuan Y, Shao Y, Wang Q, Dong Q, Bi C, Sharma P, Gruverman A, Huang J. Giant switchable photovoltaic effect in organometal trihalide perovskite devices. Nature Materials. 14: 193-8. PMID 25485985 DOI: 10.1038/Nmat4150  0.485
2015 Očenášek J, Lu H, Bark CW, Eom CB, Alcalá J, Catalan G, Gruverman A. Nanomechanics of flexoelectric switching Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.035417  0.404
2015 Sokolov A, Bak O, Lu H, Li S, Tsymbal EY, Gruverman A. Effect of epitaxial strain on tunneling electroresistance in ferroelectric tunnel junctions Nanotechnology. 26. DOI: 10.1088/0957-4484/26/30/305202  0.352
2015 Abuwasib M, Lee H, Gruverman A, Eom CB, Singisetti U. Contact resistance to SrRuO3 and La0.67Sr0.33MnO3 epitaxial films Applied Physics Letters. 107. DOI: 10.1063/1.4938143  0.313
2015 Shimizu T, Yokouchi T, Oikawa T, Shiraishi T, Kiguchi T, Akama A, Konno TJ, Gruverman A, Funakubo H. Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films Applied Physics Letters. 106. DOI: 10.1063/1.4915336  0.393
2015 Yin YW, Raju M, Hu WJ, Burton JD, Kim YM, Borisevich AY, Pennycook SJ, Yang SM, Noh TW, Gruverman A, Li XG, Zhang ZD, Tsymbal EY, Li Q. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited) Journal of Applied Physics. 117. DOI: 10.1063/1.4913753  0.368
2015 Sharma P, Ryu S, Viskadourakis Z, Paudel TR, Lee H, Panagopoulos C, Tsymbal EY, Eom CB, Gruverman A. Electromechanics of Ferroelectric-Like Behavior of LaAlO3 Thin Films Advanced Functional Materials. 25: 6538-6544. DOI: 10.1002/Adfm.201502483  0.482
2014 Lukyanchuk I, Sharma P, Nakajima T, Okamura S, Scott JF, Gruverman A. High-symmetry polarization domains in low-symmetry ferroelectrics. Nano Letters. 14: 6931-5. PMID 25420186 DOI: 10.1021/Nl503070F  0.576
2014 Lu H, Lipatov A, Ryu S, Kim DJ, Lee H, Zhuravlev MY, Eom CB, Tsymbal EY, Sinitskii A, Gruverman A. Ferroelectric tunnel junctions with graphene electrodes. Nature Communications. 5: 5518. PMID 25417720 DOI: 10.1038/Ncomms6518  0.359
2014 Kim DJ, Paudel TR, Lu H, Burton JD, Connell JG, Tsymbal EY, Ambrose Seo SS, Gruverman A. Room-temperature ferroelectricity in hexagonal TbMnO3 thin films. Advanced Materials (Deerfield Beach, Fla.). 26: 7660-5. PMID 25327617 DOI: 10.1002/Adma.201403301  0.378
2014 McQuaid RG, Gruverman A, Scott JF, Gregg JM. Exploring vertex interactions in ferroelectric flux-closure domains. Nano Letters. 14: 4230-7. PMID 25058751 DOI: 10.1021/Nl5006788  0.394
2014 Whyte JR, McQuaid RG, Sharma P, Canalias C, Scott JF, Gruverman A, Gregg JM. Ferroelectric domain wall injection. Advanced Materials (Deerfield Beach, Fla.). 26: 293-8. PMID 24136810 DOI: 10.1002/Adma.201303567  0.502
2014 You L, Caesario P, Fang L, Ren P, Wang L, Zhou Y, Gruverman A, Wang J. Effect of lanthanum doping on tetragonal-like BiFe O3 with mixed-phase domain structures Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.134110  0.418
2014 Sharma P, Fursina A, Poddar S, Ducharme S, Gruverman A. Coplanar switching of polarization in thin films of vinylidene fluoride oligomers Applied Physics Letters. 105. DOI: 10.1063/1.4901257  0.602
2014 Chen J, Gruverman A, Morozovska AN, Valanoor N. Sub-critical field domain reversal in epitaxial ferroelectric films Journal of Applied Physics. 116. DOI: 10.1063/1.4896730  0.439
2014 Whyte JR, McQuaid RGP, Ashcroft CM, Einsle JF, Canalias C, Gruverman A, Gregg JM. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for "domain wall memristors" Journal of Applied Physics. 116. DOI: 10.1063/1.4891347  0.417
2014 Sharma P, Poddar S, Korlacki R, Ducharme S, Gruverman A. Investigation of ferroelectric domains in thin films of vinylidene fluoride oligomers Applied Physics Letters. 105. DOI: 10.1063/1.4890412  0.575
2014 Kolobov AV, Kim DJ, Giussani A, Fons P, Tominaga J, Calarco R, Gruverman A. Ferroelectric switching in epitaxial GeTe films Apl Materials. 2. DOI: 10.1063/1.4881735  0.414
2014 Song J, Lu H, Gruverman A, Ducharme S. Polarization imaging in ferroelectric polymer thin film capacitors by pyroelectric scanning microscopy Applied Physics Letters. 104. DOI: 10.1063/1.4875960  0.362
2014 Wong F, Perez G, Bonilla M, Colon-Santana JA, Zhang X, Sharma P, Gruverman A, Dowben PA, Rosa LG. Changing molecular band offsets in polymer blends of (P3HT/P(VDF-TrFE)) poly(3-hexylthiophene) and poly(vinylidene fluoride with trifluoroethylene) due to ferroelectric poling Rsc Advances. 4: 3020-3027. DOI: 10.1039/C3Ra43993C  0.431
2014 Whyte JR, McQuaid RGP, Sharma P, Canalias C, Scott JF, Gruverman A, Gregg JM. Domain Walls: Ferroelectric Domain Wall Injection (Adv. Mater. 2/2014) Advanced Materials. 26: 348-348. DOI: 10.1002/Adma.201470011  0.484
2014 Rana A, Lu H, Bogle K, Zhang Q, Vasudevan R, Thakare V, Gruverman A, Ogale S, Valanoor N. Scaling behavior of resistive switching in epitaxial bismuth ferrite heterostructures Advanced Functional Materials. 24: 3962-3969. DOI: 10.1002/Adfm.201400110  0.716
2013 Christophis C, Cavalcanti-Adam EA, Hanke M, Kitamura K, Gruverman A, Grunze M, Dowben PA, Rosenhahn A. Adherent cells avoid polarization gradients on periodically poled LiTaO3 ferroelectrics. Biointerphases. 8: 27. PMID 24706139 DOI: 10.1186/1559-4106-8-27  0.38
2013 Yin YW, Burton JD, Kim YM, Borisevich AY, Pennycook SJ, Yang SM, Noh TW, Gruverman A, Li XG, Tsymbal EY, Li Q. Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface. Nature Materials. 12: 397-402. PMID 23416728 DOI: 10.1038/Nmat3564  0.389
2013 Sharma P, McQuaid RG, McGilly LJ, Gregg JM, Gruverman A. Nanoscale dynamics of superdomain boundaries in single-crystal BaTiO3 lamellae. Advanced Materials (Deerfield Beach, Fla.). 25: 1323-30. PMID 23297058 DOI: 10.1002/Adma.201203226  0.415
2013 Sharma P, Nakajima T, Okamura S, Gruverman A. Effect of disorder potential on domain switching behavior in polymer ferroelectric films. Nanotechnology. 24: 015706. PMID 23221321 DOI: 10.1088/0957-4484/24/1/015706  0.589
2013 Cao S, Liu P, Tang J, Lu H, Bark CW, Ryu S, Eom CB, Gruverman A, Dowben PA. Magnetoelectric coupling at the EuO/BaTiO3 interface Applied Physics Letters. 102. DOI: 10.1063/1.4803492  0.324
2013 Chen J, Lu H, Liu HJ, Chu YH, Dunn S, Ostrikov K, Gruverman A, Valanoor N. Interface control of surface photochemical reactivity in ultrathin epitaxial ferroelectric films Applied Physics Letters. 102. DOI: 10.1063/1.4802885  0.404
2013 Stamm A, Kim DJ, Lu H, Bark CW, Eom CB, Gruverman A. Polarization relaxation kinetics in ultrathin ferroelectric capacitors Applied Physics Letters. 102. DOI: 10.1063/1.4794865  0.404
2013 Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R, Sitar Z, Maria JP. Epitaxial PbxZr1-xTiO3 on GaN Journal of Applied Physics. 113. DOI: 10.1063/1.4792599  0.399
2013 Tsymbal EY, Gruverman A. Ferroelectric tunnel junctions: Beyond the barrier Nature Materials. 12: 602-604. DOI: 10.1038/Nmat3669  0.368
2013 Xiao Z, Dong Q, Sharma P, Yuan Y, Mao B, Tian W, Gruverman A, Huang J. Ferroelectric Materials: Synthesis and Application of Ferroelectric P(VDF‐TrFE) Nanoparticles in Organic Photovoltaic Devices for High Efficiency (Adv. Energy Mater. 12/2013) Advanced Energy Materials. 3: 1672-1672. DOI: 10.1002/Aenm.201370051  0.426
2013 Xiao Z, Dong Q, Sharma P, Yuan Y, Mao B, Tian W, Gruverman A, Huang J. Synthesis and application of ferroelectric P(VDF-TrFE) nanoparticles in organic photovoltaic devices for high efficiency Advanced Energy Materials. 3: 1581-1588. DOI: 10.1002/Aenm.201300396  0.433
2012 Kumar A, Shivareddy SG, Correa M, Resto O, Choi Y, Cole MT, Katiyar RS, Scott JF, Amaratunga GA, Lu H, Gruverman A. Ferroelectric-carbon nanotube memory devices. Nanotechnology. 23: 165702. PMID 22460805 DOI: 10.1088/0957-4484/23/16/165702  0.326
2012 Bark CW, Sharma P, Wang Y, Baek SH, Lee S, Ryu S, Folkman CM, Paudel TR, Kumar A, Kalinin SV, Sokolov A, Tsymbal EY, Rzchowski MS, Gruverman A, Eom CB. Switchable induced polarization in LaAlO3/SrTiO3 heterostructures. Nano Letters. 12: 1765-71. PMID 22400486 DOI: 10.1021/Nl3001088  0.504
2012 Yang B, Yuan Y, Sharma P, Poddar S, Korlacki R, Ducharme S, Gruverman A, Saraf R, Huang J. Tuning the energy level offset between donor and acceptor with ferroelectric dipole layers for increased efficiency in bilayer organic photovoltaic cells. Advanced Materials (Deerfield Beach, Fla.). 24: 1455-60. PMID 22328442 DOI: 10.1002/Adma.201104509  0.455
2012 Lu H, Liu X, Burton JD, Bark CW, Wang Y, Zhang Y, Kim DJ, Stamm A, Lukashev P, Felker DA, Folkman CM, Gao P, Rzchowski MS, Pan XQ, Eom CB, ... ... Gruverman A, et al. Enhancement of ferroelectric polarization stability by interface engineering. Advanced Materials (Deerfield Beach, Fla.). 24: 1209-16. PMID 22278910 DOI: 10.1002/Adma.201104398  0.317
2012 McQuaid RG, McMillen M, Chang LW, Gruverman A, Gregg JM. Domain wall propagation in meso- and nanoscale ferroelectrics. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 024204. PMID 22172983 DOI: 10.1088/0953-8984/24/2/024204  0.445
2012 Tsymbal EY, Gruverman A, Garcia V, Bibes M, Barthélémy A. Ferroelectric and multiferroic tunnel junctions Mrs Bulletin. 37: 138-143. DOI: 10.1557/Mrs.2011.358  0.395
2012 Lu H, Bark CW, Esque De Los Ojos D, Alcala J, Eom CB, Catalan G, Gruverman A. Mechanical writing of ferroelectric polarization Science. 335: 59-61. DOI: 10.1126/Science.1218693  0.433
2012 Gruverman A. Recent advances in functional testing of ferroelectric nanostructures Ferroelectrics. 433: 88-106. DOI: 10.1080/00150193.2012.678145  0.33
2012 Yasui S, Ehara Y, Utsugi S, Nakajima M, Funakubo H, Gruverman A. Complex domain structure in relaxed PbTiO 3 thick films grown on (100) cSrRuO 3//(100)SrTiO 3 substrates Journal of Applied Physics. 112. DOI: 10.1063/1.4746078  0.445
2012 Barroca N, Vilarinho PM, Fernandes MHV, Sharma P, Gruverman A. Stability of electrically induced-polarization in poly (L-lactic) acid for bone regeneration Applied Physics Letters. 101. DOI: 10.1063/1.4729619  0.494
2012 Lu H, George TA, Wang Y, Ketsman I, Burton JD, Bark CW, Ryu S, Kim DJ, Wang J, Binek C, Dowben PA, Sokolov A, Eom CB, Tsymbal EY, Gruverman A. Electric modulation of magnetization at the BaTiO 3/La 0.67Sr 0.33MnO 3 interfaces Applied Physics Letters. 100. DOI: 10.1063/1.4726427  0.325
2012 Pantel D, Lu H, Goetze S, Werner P, Jik Kim D, Gruverman A, Hesse D, Alexe M. Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr 0.2Ti 0.8)O 3 barriers Applied Physics Letters. 100. DOI: 10.1063/1.4726120  0.347
2012 Yuan Y, Sharma P, Xiao Z, Poddar S, Gruverman A, Ducharme S, Huang J. Understanding the effect of ferroelectric polarization on power conversion efficiency of organic photovoltaic devices Energy and Environmental Science. 5: 8558-8563. DOI: 10.1039/C2Ee22098A  0.523
2012 Lu H, Kim DJ, Bark CW, Ryu S, Eom CB, Tsymbal EY, Gruverman A. Mechanically-induced resistive switching in ferroelectric tunnel junctions Nano Letters. 12: 6289-6292. DOI: 10.1021/Nl303396N  0.442
2012 Kim DJ, Lu H, Ryu S, Bark CW, Eom CB, Tsymbal EY, Gruverman A. Ferroelectric tunnel memristor Nano Letters. 12: 5697-5702. DOI: 10.1021/Nl302912T  0.322
2012 Barroca NB, Daniel-Da-Silva AL, Gomes PS, Fernandes MHR, Lanceros-Méndez S, Sharma P, Gruverman A, Fernandes MHV, M.vilarinho P. Suitability of PLLA as piezoelectric substrates for tissue engineering evidenced by microscopy techniques Microscopy and Microanalysis. 18: 63-64. DOI: 10.1017/S1431927612012974  0.47
2011 McQuaid RG, McGilly LJ, Sharma P, Gruverman A, Gregg JM. Mesoscale flux-closure domain formation in single-crystal BaTiO3. Nature Communications. 2: 404. PMID 21792183 DOI: 10.1038/Ncomms1413  0.5
2011 Kim S, Bastani Y, Lu H, King WP, Marder S, Sandhage KH, Gruverman A, Riedo E, Bassiri-Gharb N. Direct fabrication of arbitrary-shaped ferroelectric nanostructures on plastic, glass, and silicon substrates. Advanced Materials (Deerfield Beach, Fla.). 23: 3786-90. PMID 21766356 DOI: 10.1002/Adma.201101991  0.345
2011 Sharma P, Reece TJ, Ducharme S, Gruverman A. High-resolution studies of domain switching behavior in nanostructured ferroelectric polymers. Nano Letters. 11: 1970-5. PMID 21462936 DOI: 10.1021/Nl200221Z  0.564
2011 Yuan Y, Reece TJ, Sharma P, Poddar S, Ducharme S, Gruverman A, Yang Y, Huang J. Efficiency enhancement in organic solar cells with ferroelectric polymers. Nature Materials. 10: 296-302. PMID 21317902 DOI: 10.1038/Nmat2951  0.489
2011 Sharma P, Wu D, Poddar S, Reece TJ, Ducharme S, Gruverman A. Orientational imaging in polar polymers by piezoresponse force microscopy Journal of Applied Physics. 110. DOI: 10.1063/1.3623765  0.529
2011 Barroca N, Vilarinho PM, Daniel-Da-Silva AL, Wu A, Fernandes MH, Gruverman A. Protein adsorption on piezoelectric poly(L-lactic) acid thin films by scanning probe microscopy Applied Physics Letters. 98. DOI: 10.1063/1.3555444  0.309
2011 Zhang Z, González R, Díaz G, Rosa LG, Ketsman I, Zhang X, Sharma P, Gruverman A, Dowben PA. Polarization mediated chemistry on ferroelectric polymer surfaces Journal of Physical Chemistry C. 115: 13041-13046. DOI: 10.1021/Jp203544K  0.507
2010 Xiao J, Zhang Z, Wu D, Routaboul L, Braunstein P, Doudin B, Losovyj YB, Kizilkaya O, Rosa LG, Borca CN, Gruverman A, Dowben PA. The interface bonding and orientation of a quinonoid zwitterion. Physical Chemistry Chemical Physics : Pccp. 12: 10329-40. PMID 20577691 DOI: 10.1039/C003996A  0.369
2010 Harnagea C, Vallières M, Pfeffer CP, Wu D, Olsen BR, Pignolet A, Légaré F, Gruverman A. Two-dimensional nanoscale structural and functional imaging in individual collagen type I fibrils. Biophysical Journal. 98: 3070-7. PMID 20550920 DOI: 10.1016/J.Bpj.2010.02.047  0.342
2010 Yazawa K, Yasui S, Morioka H, Yamada T, Uchida H, Gruverman A, Funakubo H. Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3-BiFeO 3 solid solution system Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan. 118: 659-663. DOI: 10.2109/Jcersj2.118.659  0.337
2010 Zhang Z, Borca CN, Wu D, Gruverman A, Kizikaya O, Xiao J, Dowben PA. Preparation and Characterization of Periodically Poled Ferroelectric Lithium Niobate (LiNbO3) Mrs Proceedings. 1255. DOI: 10.1557/Proc-1255-M02-05  0.329
2010 Chen X, Yang S, Kim JH, Kim HD, Kim JS, Rojas G, Skomski R, Lu H, Bhattacharya A, Santos T, Guisinger N, Bode M, Gruverman A, Enders A. Ultrathin BaTiO3 templates for multiferroic nanostructures New Journal of Physics. 13. DOI: 10.1088/1367-2630/13/8/083037  0.388
2010 Zhang Z, Sharma P, Borca CN, Dowben PA, Gruverman A. Polarization-specific adsorption of organic molecules on ferroelectric LiNbO3 surfaces Applied Physics Letters. 97. DOI: 10.1063/1.3525373  0.496
2010 Rodriguez BJ, Eng LM, Gruverman A. Web-like domain structure formation in barium titanate single crystals Applied Physics Letters. 97. DOI: 10.1063/1.3467871  0.414
2010 Wu D, Vrejoiu I, Alexe M, Gruverman A. Anisotropy of domain growth in epitaxial ferroelectric capacitors Applied Physics Letters. 96. DOI: 10.1063/1.3366724  0.416
2009 Gruverman A, Wu D, Lu H, Wang Y, Jang HW, Folkman CM, Zhuravlev MY, Felker D, Rzchowski M, Eom CB, Tsymbal EY. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. Nano Letters. 9: 3539-43. PMID 19697939 DOI: 10.1021/Nl901754T  0.422
2009 Bonnell DA, Kalinin SV, Kholkin AL, Gruverman A. Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale Mrs Bulletin. 34: 648-657. DOI: 10.1557/Mrs2009.176  0.37
2009 Sharma P, Reece T, Wu D, Fridkin VM, Ducharme S, Gruverman A. Nanoscale domain patterns in ultrathin polymer ferroelectric films Journal of Physics Condensed Matter. 21. DOI: 10.1088/0953-8984/21/48/485902  0.592
2009 Wu D, Kunishima I, Roberts S, Gruverman A. Spatial variations in local switching parameters of ferroelectric random access memory capacitors Applied Physics Letters. 95. DOI: 10.1063/1.3192354  0.382
2009 Gruverman A. Nanoscale insight into the statics and dynamics of polarization behavior in thin film ferroelectric capacitors Journal of Materials Science. 44: 5182-5188. DOI: 10.1007/S10853-009-3623-4  0.406
2008 Gruverman A, Wu D, Scott JF. Piezoresponse force microscopy studies of switching behavior of ferroelectric capacitors on a 100-ns time scale Physical Review Letters. 100. DOI: 10.1103/Physrevlett.100.097601  0.417
2008 Habicht S, Nemanich RJ, Gruverman A. Physical adsorption on ferroelectric surfaces: Photoinduced and thermal effects Nanotechnology. 19. DOI: 10.1088/0957-4484/19/49/495303  0.358
2008 Scott JF, Gruverman A, Wu D, Vrejoiu I, Alexe M. Nanodomain faceting in ferroelectrics Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/42/425222  0.337
2008 Gruverman A, Wu D, Fan HJ, Vrejoiu I, Alexe M, Harrison RJ, Scott JF. Vortex ferroelectric domains Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/34/342201  0.409
2008 Wu A, Vilarinho PM, Wu D, Gruverman A. Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors Applied Physics Letters. 93. DOI: 10.1063/1.3059566  0.453
2008 Gruverman A, Cross JS, Oates WS. Peculiar effect of mechanical stress on polarization stability in micrometer-scale ferroelectric capacitors Applied Physics Letters. 93. DOI: 10.1063/1.3046734  0.445
2008 Nakaki H, Kim YK, Yokoyama S, Ikariyama R, Funakubo H, Streiffer SK, Nishida K, Saito K, Gruverman A. Experimental evidence of strain relaxed domain structure in (100)/(001)-oriented epitaxial lead titanate thick films grown by metal organic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2981193  0.37
2008 Kalinin SV, Rodriguez BJ, Kim SH, Hong SK, Gruverman A, Eliseev EA. Imaging mechanism of piezoresponse force microscopy in capacitor structures Applied Physics Letters. 92. DOI: 10.1063/1.2905266  0.416
2007 Gruverman A, Wu D, Rodriguez BJ, Kalinin SV, Habelitz S. High-resolution imaging of proteins in human teeth by scanning probe microscopy. Biochemical and Biophysical Research Communications. 352: 142-6. PMID 17112467 DOI: 10.1016/J.Bbrc.2006.10.182  0.332
2007 Watanabe T, Funakubo H, Osada M, Uchida H, Okada I, Rodriguez BJ, Gruverman A. Probing intrinsic polarization properties in bismuth-layered ferroelectric films Applied Physics Letters. 90. DOI: 10.1063/1.2713858  0.424
2007 Rodriguez BJ, Gruverman A, Nemanich RJ. Nanoscale characterization of electronic and electrical properties of III-nitrides by scanning probe microscopy Scanning Probe Microscopy. 2: 690-714. DOI: 10.1007/978-0-387-28668-6_26  0.301
2006 Kalinin SV, Rodriguez BJ, Jesse S, Shin J, Baddorf AP, Gupta P, Jain H, Williams DB, Gruverman A. Vector piezoresponse force microscopy. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 12: 206-20. PMID 17481357 DOI: 10.1017/S1431927606060156  0.334
2006 Kalinin SV, Rodriguez BJ, Shin J, Jesse S, Grichko V, Thundat T, Baddorf AP, Gruverman A. Bioelectromechanical imaging by scanning probe microscopy: Galvani's experiment at the nanoscale. Ultramicroscopy. 106: 334-40. PMID 16387441 DOI: 10.1016/J.Ultramic.2005.10.005  0.344
2006 Gruverman A, Kholkin A. Introduction to the special issue on nanoscale ferroelectrics Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 53: 2206-2207. DOI: 10.1109/Tuffc.2006.167  0.428
2006 Hanson JN, Rodriguez BJ, Nemanich RJ, Gruverman A. Fabrication of metallic nanowires on a ferroelectric template via photochemical reaction Nanotechnology. 17: 4946-4949. DOI: 10.1088/0957-4484/17/19/028  0.404
2006 Dawber M, Gruverman A, Scott JF. Skyrmion model of nano-domain nucleation in ferroelectrics and ferromagnets Journal of Physics Condensed Matter. 18: L71-L79. DOI: 10.1088/0953-8984/18/5/L03  0.427
2006 Gruverman A, Kholkin A. Nanoscale ferroelectrics: Processing, characterization and future trends Reports On Progress in Physics. 69: 2443-2474. DOI: 10.1088/0034-4885/69/8/R04  0.394
2006 Balke N, Lupascu DC, Blair T, Gruverman A. Thickness profiles through fatigued bulk ceramic lead zirconate titanate Journal of Applied Physics. 100. DOI: 10.1063/1.2395600  0.325
2006 Kim T, Hanson JN, Gruverman A, Kingon AI, Streiffer SK. Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil Applied Physics Letters. 88. DOI: 10.1063/1.2217254  0.406
2006 Agronin A, Molotskii M, Rosenwaks Y, Rosenman G, Rodriguez BJ, Kingon AI, Gruverman A. Dynamics of ferroelectric domain growth in the field of atomic force microscope Journal of Applied Physics. 99. DOI: 10.1063/1.2197264  0.406
2006 Gruverman A, Kalinin SV. Piezoresponse force microscopy and recent advances in nanoscale studies of ferroelectrics Journal of Materials Science. 41: 107-116. DOI: 10.1007/S10853-005-5946-0  0.327
2006 Oates WS, Gruverman A. Polarization switching in (111) oriented PZT thin films American Society of Mechanical Engineers, Aerospace Division (Publication) Ad 0.375
2005 Shin J, Rodriguez BJ, Baddorf AP, Thundat T, Karapetian E, Kachanov M, Gruverman A, Kalinin SV. Simultaneous elastic and electromechanical imaging by scanning probe microscopy: Theory and applications to ferroelectric and biological materials Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2102-2108. DOI: 10.1116/1.2052714  0.323
2005 Yang WC, Rodriguez BJ, Gruverman A, Nemanich RJ. Photo electron emission microscopy of polarity-patterned materials Journal of Physics Condensed Matter. 17. DOI: 10.1088/0953-8984/17/16/012  0.416
2005 Gruverman A, Rodriguez BJ, Dehoff C, Waldrep JD, Kingon AI, Nemanich RJ, Cross JS. Direct studies of domain switching dynamics in thin film ferroelectric capacitors Applied Physics Letters. 87. DOI: 10.1063/1.2010605  0.431
2005 Kalinin SV, Rodriguez BJ, Jesse S, Thundat T, Gruverman A. Electromechanical imaging of biological systems with sub-10 nm resolution Applied Physics Letters. 87. DOI: 10.1063/1.2006984  0.321
2005 Nagarajan V, Aggarwal S, Gruverman A, Ramesh R, Waser R. Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: Role of local environments Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1977183  0.399
2005 Kalinin SV, Gruverman A, Rodriguez BJ, Shin J, Baddorf AP, Karapetian E, Kachanov M. Nanoelectromechanics of polarization switching in piezoresponse force microscopy Journal of Applied Physics. 97. DOI: 10.1063/1.1866483  0.438
2005 Dehoff C, Rodriguez BJ, Kingon AI, Nemanich RJ, Gruverman A, Cross JS. Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors Review of Scientific Instruments. 76. DOI: 10.1063/1.1850652  0.403
2005 Rodriguez BJ, Nemanich RJ, Kingon A, Gruverman A, Kalinin SV, Terabe K, Liu XY, Kitamura K. Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy Applied Physics Letters. 86. DOI: 10.1063/1.1845594  0.417
2005 Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ, Cross JS. Investigation of the mechanism of polarization switching in ferroelectric capacitors by three-dimensional piezoresponse force microscopy Applied Physics a: Materials Science and Processing. 80: 99-103. DOI: 10.1007/S00339-004-2925-2  0.444
2004 Yang WC, Rodriguez BJ, Gruverman A, Nemanich RJ. Polarization-dependent electron affinity of LiNbO 3 surfaces Applied Physics Letters. 85: 2316-2318. DOI: 10.1063/1.1790604  0.383
2004 Kalinin SV, Gruverman A, Bonnell DA. Quantitative analysis of nanoscale switching in SrBi 2Ta 2O 9 thin films by piezoresponse force microscopy Applied Physics Letters. 85: 795-797. DOI: 10.1063/1.1775881  0.432
2004 Gruverman A, Cao W, Bhaskar S, Dey SK. Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy Applied Physics Letters. 84: 5153-5155. DOI: 10.1063/1.1765740  0.426
2004 Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ, Cross JS. Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy Journal of Applied Physics. 95: 1958-1962. DOI: 10.1063/1.1638889  0.455
2003 Kelman MB, McIntyre PC, Gruverman A, Hendrix BC, Bilodeau SM, Roeder JF. Origin and implications of the observed rhombohedral phase in nominally tetragonal Pb(Zr0.35Ti0.65)O3 thin films Journal of Applied Physics. 94: 5210-5219. DOI: 10.1063/1.1610773  0.381
2003 Gruverman A, Rodriguez BJ, Kingon AI, Nemanich RJ, Cross JS, Tsukada M. Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors Applied Physics Letters. 82: 3071-3073. DOI: 10.1063/1.1570942  0.339
2002 Terabe K, Takekawa S, Nakamura M, Kitamura K, Higuchi S, Gotoh Y, Gruverman A. Imaging and engineering the nanoscale-domain structure of a Sr 0.61Ba0.39Nb2O6 crystal using a scanning force microscope Applied Physics Letters. 81: 2044-2046. DOI: 10.1063/1.1506945  0.394
2002 Gruverman A, Rodriguez BJ, Nemanich RJ, Kingon AI. Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films Journal of Applied Physics. 92: 2734-2739. DOI: 10.1063/1.1497698  0.48
2002 Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ, Ambacher O. Piezoresponse force microscopy for polarity imaging of GaN Applied Physics Letters. 80: 4166-4168. DOI: 10.1063/1.1483117  0.405
2002 Kim S, Gopalan V, Gruverman A. Coercive fields in ferroelectrics: A case study in lithium niobate and lithium tantalate Applied Physics Letters. 80: 2740-2742. DOI: 10.1063/1.1470247  0.412
2002 Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ. Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials Journal of Crystal Growth. 246: 252-258. DOI: 10.1016/S0022-0248(02)01749-9  0.426
2001 Gruverman A, Kholkin A, Kingon A, Tokumoto H. Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy Applied Physics Letters. 78: 2751-2753. DOI: 10.1063/1.1366644  0.484
2001 Gruverman A, Tanaka M. Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale Journal of Applied Physics. 89: 1836-1843. DOI: 10.1063/1.1334938  0.476
2001 Gruverman A, Tokumoto H. On the Imaging Mechanism of Ferroelectric Domains in Scanning Force Microscopy Nano Letters. 1: 93-95. DOI: 10.1021/Nl005522R  0.476
2001 Kholkin AL, Gruverman A, Wu A, Avdeev M, Vilarinho PM, Miranda Salvado IM, Baptista JL. Seeding effect on micro- and domain structure of sol-gel-derived PZT thin films Materials Letters. 50: 219-224. DOI: 10.1016/S0167-577X(01)00228-2  0.442
2001 Gruverman A, Isobe C, Tanaka M. Nanoscale properties of SrBi2Ta2O9 thin films Materials Research Society Symposium - Proceedings. 655.  0.345
2000 Gruverman A, Isobe C, Tanaka M. Nanoscale Properties of SrBi 2 Ta 2 O 9 Thin Films Mrs Proceedings. 655. DOI: 10.1557/Proc-655-Cc8.5.1  0.324
2000 Gruverman A, Pignolet A, Satyalakshmi KM, Alexe M, Zakharov ND, Hesse D. Nanoscopic switching behavior of epitaxial SrBi2Ta2O9 films deposited by pulsed laser deposition Applied Physics Letters. 76: 106-108. DOI: 10.1063/1.125671  0.413
1999 Gruverman A, Hironaka K, Ikeda Y, Satyalakshmi KM, Pignolet A, Alexe M, Zakharov ND, Hesse D. SFM characterization of SrBi2Ta2O9 thin films for nanoscale memory applications Integrated Ferroelectrics. 27: 159-169. DOI: 10.1080/10584589908228465  0.457
1999 Gruverman A. Scaling effect on statistical behavior of switching parameters of ferroelectric capacitors Applied Physics Letters. 75: 1452-1454. DOI: 10.1063/1.124722  0.379
1999 Alexe M, Gruverman A, Harnagea C, Zakharov ND, Pignolet A, Hesse D, Scott JF. Switching properties of self-assembled ferroelectric memory cells Applied Physics Letters. 75: 1158-1160. DOI: 10.1063/1.124628  0.3
1998 Auciello O, Gruverman A, Tokumoto H, Prakash SA, Aggarwal S, Ramesh R. Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films Mrs Bulletin. 23: 33-41. DOI: 10.1557/S0883769400031444  0.418
1998 Gruverman A, Prakash SA, Aggarwal S, Ramesh R, Auciello O, Tokumoto H. Nanoscale investigation of polarization retention loss in ferroelectric thin films via scanning force microscopy Materials Research Society Symposium - Proceedings. 493: 53-58. DOI: 10.1557/Proc-493-53  0.48
1998 Gruverman A, Auciello O, Tokumoto H. Imaging and control of domain structures in ferroelectric thin films via scanning force microscopy Annual Review of Materials Science. 28: 101-123. DOI: 10.1146/Annurev.Matsci.28.1.101  0.47
1998 Gruverman A, Ikeda Y. Characterization and control of domain structure in SrBi2Ta2O9 thin films by scanning force microscopy Japanese Journal of Applied Physics, Part 2: Letters. 37. DOI: 10.1143/Jjap.37.L939  0.461
1998 Gruverman A, Auciello O, Tokumoto H. Scanning force microscopy: Application to nanoscale studies of ferroelectric domains Integrated Ferroelectrics. 19: 49-83. DOI: 10.1080/10584589808012695  0.466
1998 Gruverman A, Tokumoto H. Polarization phenomena in SrBi2Ta2O9 ferroelectric thin films at the nanometer scale Ieee International Symposium On Applications of Ferroelectrics. 427-430.  0.384
1998 Kim S, Park Y, Kang Y, Park W, Baik S, Gruverman AL. Ferroelectric domains in epitaxial PbTiO3 and BaTiO3 thin films on MgO(100) Thin Solid Films. 312: 249-253.  0.323
1997 Gruverman A, Auciello O, Ramesh R, Tokumoto H. Scanning force microscopy of domain structure in ferroelectric thin films: Imaging and control Nanotechnology. 8. DOI: 10.1088/0957-4484/8/3A/008  0.459
1997 Gruverman A, Tokumoto H, Prakash AS, Aggarwal S, Yang B, Wuttig M, Ramesh R, Auciello O, Venkatesan T. Nanoscale imaging of domain dynamics and retention in ferroelectric thin films Applied Physics Letters. 71: 3492-3494. DOI: 10.1063/1.120369  0.461
1997 Terabe K, Kurashima K, Gruverman A, Matsui Y, Iyi N, Kitamura K. Transmission electron microscopy study on epitaxial growth behaviors of sol-gel-derived LiNbO3 films Journal of Crystal Growth. 179: 577-584. DOI: 10.1016/S0022-0248(97)00130-9  0.377
1997 Auciello O, Gruverman A, Tokumoto H. Scanning force microscopy study of domain structure in Pb (ZrxTi1-x) O3 thin films and Pt/PZT/Pt and RuO2 / PZT / RuO2 capacitors Integrated Ferroelectrics. 15: 107-114.  0.331
1997 Gruverman A, Tokumoto H, Prakash AS, Aggarwal S, Yang B, Wuttig M, Ramesh R, Auciello O, Venkatesan T. Nanoscale imaging of domain dynamics and retention in ferroelectric thin films Applied Physics Letters. 71: 3492-3494.  0.357
1996 Terabe K, Gruverman A, Matsui Y, Iyi N, Kitamura K. Transmission Electron Microscopy Observation And Optical Property Of Sol-Gel Derived Linbo3 Films Journal of Materials Research. 11: 3152-3157. DOI: 10.1557/Jmr.1996.0400  0.377
1996 Gruverman A, Auciello O, Tokumoto H. Scanning force microscopy for the study of domain structure in ferroelectric thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 602-605. DOI: 10.1116/1.589143  0.455
1996 Gruverman A, Auciello O, Tokumoto H. Nanoscale investigation of fatigue effects in Pb(Zr,Ti)O3 films Applied Physics Letters. 69: 3191-3193. DOI: 10.1063/1.117957  0.445
1996 Gruverman A, Auciello O, Hatano J, Tokumoto H. Scanning force microscopy as a tool for nanoscale study of ferroelectric domains Ferroelectrics. 184: 11-20.  0.325
1995 Gruverman A, Kolosov O, Hatano J, Takahashi K, Tokumoto H. Nanoscale control of ferroelectric domain structure by AFM Materials Research Society Symposium - Proceedings. 357: 363-368. DOI: 10.1557/Proc-357-363  0.409
1995 Gruverman A, Kolosov O, Hatano J, Takahashi K, Tokumoto H. Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1095-1099. DOI: 10.1116/1.587909  0.445
1995 Kolosov O, Gruverman A, Hatano J, Takahashi K, Tokumoto H. Nanoscale visualization and control of ferroelectric domains by atomic force microscopy Physical Review Letters. 74: 4309-4312. DOI: 10.1103/Physrevlett.74.4309  0.417
1994 Gruverman A, Ponomarev N, Takahashi K. Domain nucleation during polarization reversal in lead germanate Japanese Journal of Applied Physics. 33: 5536-5539. DOI: 10.1143/Jjap.33.5536  0.433
1994 Hatano J, Mukaigawa T, Uehara H, Gruverman A, Takahashi K, Yukino K. Crystallizing process of amorphous thick films of ferroelectric lead germanate family Japanese Journal of Applied Physics. 33: 5521-5524. DOI: 10.1143/Jjap.33.5521  0.336
1989 Shur VY, Gruverman AL, Letuchev VV, Rumyantsev EL, Subbotin AL. Domain Structure Of Lead Germanate Ferroelectrics. 98: 29-49. DOI: 10.1080/00150198908217568  0.304
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