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Congyong Zhu, Ph.D. - Publications

Affiliations: 
2013 Engineering Virginia Commonwealth University, Richmond, VA, United States 
Area:
Electronics and Electrical Engineering
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Ferreyr RA, Li X, Zhang F, Zhu C, Izyumskaya N, Kayis C, Avrutin V, ÖzgUr U, Morkoc H. Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2005165  0.398
2013 Zhu C, Zhang F, Ferreyra RA, Li X, Kayis C, Avrutin V, Özgur U, Morkoc H. Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: Role of surface effects Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2000558  0.428
2013 Liu H, Avrutin V, Zhu C, Özgür Ü, Yang J, Lu C, Morkoç H. Enhanced microwave dielectric tunability of Ba0.5Sr0.5TiO3 thin films grown with reduced strain on DyScO3 substrates by three-step technique Journal of Applied Physics. 113: 044108. DOI: 10.1063/1.4789008  0.414
2012 Kayis C, Ferreyra RA, Zhu C, Wu M, Li X, Özgür U, Matulionis A, Morkoç H. Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: Hot-phonon effects Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.908501  0.424
2012 Zhu C, Wu M, Kayis C, Zhang F, Li X, Ferreyra R, Avrutin V, Özgur U, Morkoç H. Degradation mechanism of InAlN/GaN based HFETs under high electric field stress Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.903983  0.411
2012 Kayis C, Ferreyra RA, Zhu C, Avrutin V, Özgür U, Morkoç H. The effect of barrier strain on the reliability of In x Al 1-xN/AlN/GaN heterostructure field-effect transistors Physica Status Solidi - Rapid Research Letters. 6: 163-165. DOI: 10.1002/Pssr.201206024  0.428
2011 Liu H, Avrutin V, Zhu C, Leach JH, Rowe E, Zhou L, Smith D, Özgür U, Morkoç H. Three-step deposition method for improvement of the dielectric properties of BST thin films Materials Research Society Symposium Proceedings. 1397: 38-43. DOI: 10.1557/Opl.2012.451  0.548
2011 Zhu C, Kayis C, Wu M, Li X, Zhang F, Avrutin V, Özgür U, Morkoc H. Reduction of flicker noise in AlGaN/GaN-Based HFETs after high electric-field stress Ieee Electron Device Letters. 32: 1513-1515. DOI: 10.1109/Led.2011.2163921  0.411
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