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Chee-Keong Tan - Publications

Affiliations: 
2011-2016 Electrical and Computer Engineering Lehigh University, Bethlehem, PA, United States 
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Liu X, Sammarco C, Zeng G, Guo D, Tang W, Tan C. Investigations of monoclinic- and orthorhombic-based (BxGa1−x)2O3 alloys Applied Physics Letters. 117: 12104. DOI: 10.1063/5.0005808  0.651
2020 Borovac D, Sun W, Tan C, Tansu N. Electronic properties of dilute-As InGaNAs alloys: A first-principles study Journal of Applied Physics. 127: 015103. DOI: 10.1063/1.5119371  0.63
2019 Goodrich JC, Borovac D, Tan CK, Tansu N. Band Anti-Crossing Model in Dilute-As GaNAs Alloys. Scientific Reports. 9: 5128. PMID 30914672 DOI: 10.1038/S41598-019-41286-Y  0.621
2019 Liu X, Tan C. Structural and electronic properties of dilute-selenide gallium oxide Aip Advances. 9: 125204. DOI: 10.1063/1.5128675  0.415
2019 Liu X, Tan C. Electronic properties of monoclinic (InxGa1-x)2O3 alloys by first-principle Aip Advances. 9: 035318. DOI: 10.1063/1.5093195  0.381
2018 Zeng G, Yang X, Tan CK, Marvel CJ, Koel BE, Tansu N, Krick BA. Shear-Induced Changes of Electronic Properties in Gallium Nitride. Acs Applied Materials & Interfaces. PMID 29954172 DOI: 10.1021/Acsami.8B02271  0.68
2018 Borovac D, Tan CK, Tansu N. First-Principle Study of the Optical Properties of Dilute-P GaNP Alloys. Scientific Reports. 8: 6025. PMID 29662131 DOI: 10.1038/S41598-018-24384-1  0.601
2018 Sun W, Tan CK, Wierer JJ, Tansu N. Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109. PMID 29449620 DOI: 10.1038/S41598-018-21434-6  0.602
2018 Borovac D, Tan C, Tansu N. First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor Aip Advances. 8: 085119. DOI: 10.1063/1.5036978  0.625
2017 Borovac D, Tan CK, Tansu N. Investigations of the Optical Properties of GaNAs Alloys by First-Principle. Scientific Reports. 7: 17285. PMID 29229949 DOI: 10.1038/S41598-017-17504-W  0.618
2017 Fragkos IE, Tan CK, Dierolf V, Fujiwara Y, Tansu N. Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes. Scientific Reports. 7: 14648. PMID 29116197 DOI: 10.1038/S41598-017-15302-Y  0.741
2017 Sun W, Tan CK, Tansu N. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports. 7: 11826. PMID 28928372 DOI: 10.1038/S41598-017-12125-9  0.696
2017 Sun W, Tan CK, Tansu N. III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports. 7: 6671. PMID 28751673 DOI: 10.1038/S41598-017-06889-3  0.65
2017 Tan C, Sun W, Wierer JJ, Tansu N. Effect of interface roughness on Auger recombination in semiconductor quantum wells Aip Advances. 7: 035212. DOI: 10.1063/1.4978777  0.608
2016 Tan CK, Borovac D, Sun W, Tansu N. First-Principle Electronic Properties of Dilute-P GaN1-xPx Alloy for Visible Light Emitters. Scientific Reports. 6: 24412. PMID 27076266 DOI: 10.1038/Srep24412  0.659
2016 Tan CK, Sun W, Borovac D, Tansu N. Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports. 6: 22983. PMID 26961170 DOI: 10.1038/Srep22983  0.644
2016 Tan CK, Borovac D, Sun W, Tansu N. Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter. Scientific Reports. 6: 22215. PMID 26905060 DOI: 10.1038/Srep22215  0.67
2016 Tan CK, Borovac D, Sun W, Tansu N. InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports. 6: 19271. PMID 26758552 DOI: 10.1038/Srep19271  0.619
2016 Zeng G, Tan CK, Tansu N, Krick BA. Ultralow wear of gallium nitride Applied Physics Letters. 109. DOI: 10.1063/1.4960375  0.67
2016 Zhu P, Zhu H, Qin W, Dantas BH, Sun W, Tan CK, Tansu N. Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4944944  0.725
2015 Zhu P, Tan CK, Sun W, Tansu N. Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. Applied Optics. 54: 10299-303. PMID 26836692 DOI: 10.1364/Ao.54.010299  0.699
2015 Tan CK, Tansu N. Nanostructured lasers: Electrons and holes get closer. Nature Nanotechnology. 10: 107-9. PMID 25599192 DOI: 10.1038/Nnano.2014.333  0.573
2015 Tansu N, Tan CK, Wierer JJ. Tutorial on III-Nitride solid state lighting and smart lighting 2015 Ieee Photonics Conference, Ipc 2015. 26-27. DOI: 10.1109/IPCon.2015.7323753  0.534
2015 Sun W, Tan CK, Tansu N. Artificially-engineered InGaN-based digital alloy for optoelectronics 2015 Ieee Photonics Conference, Ipc 2015. 519-520. DOI: 10.1109/IPCon.2015.7323675  0.558
2015 Tan CK, Tansu N. Dilute-As AlNAs semiconductor for ultraviolet emitters 2015 Ieee Photonics Conference, Ipc 2015. 521-522. DOI: 10.1109/IPCon.2015.7323584  0.619
2015 Tan CK, Tansu N. Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters 2015 Ieee Photonics Conference, Ipc 2015. 577-578. DOI: 10.1109/IPCon.2015.7323494  0.568
2015 Tan CK, Tansu N. Auger recombination rates in dilute-As GaNAs semiconductor Aip Advances. 5. DOI: 10.1063/1.4921394  0.599
2015 Tan CK, Tansu N. First-principle natural band alignment of GaN / dilute-As GaNAs alloy Aip Advances. 5. DOI: 10.1063/1.4906569  0.65
2013 Tan CK, Zhang J, Li XH, Liu G, Tayo BO, Tansu N. First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters Ieee/Osa Journal of Display Technology. 9: 272-279. DOI: 10.1109/Jdt.2013.2248342  0.756
2012 Tan CK, Zhang J, Li XH, Liu G, Tansu N. Dilute-As GaNAs semiconductor for visible emitters 2012 Ieee Photonics Conference, Ipc 2012. 695-696. DOI: 10.1109/IPCon.2012.6358812  0.633
2012 Liu G, Zhang J, Tan CK, Tansu N. Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers 2012 Ieee Photonics Conference, Ipc 2012. 431-432. DOI: 10.1109/IPCon.2012.6358677  0.558
2012 Tansu N, Zhang J, Liu G, Zhao H, Tan CK, Zhu P. Physics of high-Efficiency III-Nitride quantum wells light-Emitting diodes Asia Communications and Photonics Conference, Acp 2012.  0.744
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