Jian Wei, Ph.D.
Affiliations: | 2003 | Princeton University, Princeton, NJ |
Area:
Photonics and Optoelectronic MaterialsGoogle:
"Jian Wei"Parents
Sign in to add mentor| Stephen R. Forrest | grad student | 2003 | Princeton | |
| (Photodetectors based on novel materials and structures for fiber optical communications and long wavelength sensing.) | ||||
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Publications
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| Xia F, Wei J, Menon V, et al. (2003) Monolithic integration of a semiconductor optical amplifier and a high bandwidth p-i-n photodiode using asymmetric twin-waveguide technology Ieee Photonics Technology Letters. 15: 452-454 |
| Wei J, Xia F, Forrest SR. (2002) A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode Ieee Photonics Technology Letters. 14: 1590-1592 |
| Wei J, Xia F, Li C, et al. (2002) High T0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source Ieee Photonics Technology Letters. 14: 597-599 |
| Xia F, Thomson JK, Gokhale MR, et al. (2001) An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler Ieee Photonics Technology Letters. 13: 845-847 |
| Wei J, Lin W, Thomson KJ, et al. (2001) Gas source molecular beam epitaxy grown InGaAs(P)N-InP long-wavelength (λ > 1.65 μm) photodetectors using a solid arsenic source Ieee Photonics Technology Letters. 13: 352-354 |
| Gokhale MR, Studenkov PV, Wei J, et al. (2000) Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers Ieee Photonics Technology Letters. 12: 131-133 |
| Wei J, Gokhale MR, Thomson KJ, et al. (2000) InGaAsPN-InP-based photodetectors for long wavelength (λ>1.65 μm) applications Ieee Photonics Technology Letters. 12: 68-70 |
| Gokhale MR, Wei J, Studenkov PV, et al. (1999) High-performance long-wavelength (λ approx. 1.3 μm) InGaAsPN quantum-well lasers Ieee Photonics Technology Letters. 11: 952-954 |
| Gokhale MR, Wei J, Wang H, et al. (1999) Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP Applied Physics Letters. 74: 1287-1289 |
| Wei J, Gokhale MR, R. Forrest S. (1999) Growth of thallium containing III–V materials by gas-source molecular beam epitaxy Journal of Crystal Growth. 203: 302-308 |