| Year |
Citation |
Score |
| 2023 |
Matson JR, Alam MN, Varnavides G, Sohr P, Knight S, Darakchieva V, Stokey M, Schubert M, Said A, Beechem T, Narang P, Law S, Caldwell JD. The Role of Optical Phonon Confinement in the Infrared Dielectric Response of III-V Superlattices. Advanced Materials (Deerfield Beach, Fla.). e2305106. PMID 38039437 DOI: 10.1002/adma.202305106 |
0.568 |
|
| 2023 |
Kuang C, Chen S, Luo M, Zhang Q, Sun X, Han S, Wang Q, Stanishev V, Darakchieva V, Crispin R, Fahlman M, Zhao D, Wen Q, Jonsson MP. Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2305898. PMID 37997181 DOI: 10.1002/advs.202305898 |
0.8 |
|
| 2022 |
Karki A, Cincotti G, Chen S, Stanishev V, Darakchieva V, Wang C, Fahlman M, Jonsson MP. Electrical Tuning of Plasmonic Conducting Polymer Nanoantennas. Advanced Materials (Deerfield Beach, Fla.). 34: e2209378. PMID 36482017 DOI: 10.1002/adma.202209378 |
0.774 |
|
| 2022 |
Karki A, Cincotti G, Chen S, Stanishev V, Darakchieva V, Wang C, Fahlman M, Jonsson MP. Electrical Tuning of Plasmonic Conducting Polymer Nanoantennas. Advanced Materials (Deerfield Beach, Fla.). 34: e2107172. PMID 35064601 DOI: 10.1002/adma.202107172 |
0.81 |
|
| 2021 |
Chen S, Rossi S, Shanker R, Cincotti G, Gamage S, Kühne P, Stanishev V, Engquist I, Berggren M, Edberg J, Darakchieva V, Jonsson MP. Tunable Structural Color Images by UV-Patterned Conducting Polymer Nanofilms on Metal Surfaces. Advanced Materials (Deerfield Beach, Fla.). e2102451. PMID 34219300 DOI: 10.1002/adma.202102451 |
0.777 |
|
| 2021 |
Armakavicius N, Kühne P, Eriksson J, Bouhafs C, Stanishev V, Ivanov IG, Yakimova R, Zakharov AA, Al-Temimy A, Coletti C, Schubert M, Darakchieva V. Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect Carbon. 172: 248-259. DOI: 10.1016/J.Carbon.2020.09.035 |
0.797 |
|
| 2020 |
Knight S, Schöche S, Kühne P, Hofmann T, Darakchieva V, Schubert M. Tunable cavity-enhanced terahertz frequency-domain optical Hall effect. The Review of Scientific Instruments. 91: 083903. PMID 32872950 DOI: 10.1063/5.0010267 |
0.804 |
|
| 2020 |
Korlacki R, Mock A, Briley C, Darakchieva V, Monemar B, Kumagai Y, Goto K, Higashiwaki M, Schubert M. Comment on “Characteristics of Multi-photon Absorption in a β-Ga2O3 Single Crystal” [J. Phys. Soc. Jpn. 88, 113701 (2019)] Journal of the Physical Society of Japan. 89: 36001. DOI: 10.7566/Jpsj.89.036001 |
0.479 |
|
| 2020 |
Stokey M, Korlacki R, Knight S, Hilfiker M, Galazka Z, Irmscher K, Darakchieva V, Schubert M. Brillouin zone center phonon modes in ZnGa2O4 Applied Physics Letters. 117: 052104. DOI: 10.1063/5.0012526 |
0.566 |
|
| 2020 |
Stokey M, Mock A, Korlacki R, Knight S, Darakchieva V, Schöche S, Schubert M. Infrared active phonons in monoclinic lutetium oxyorthosilicate Journal of Applied Physics. 127: 115702. DOI: 10.1063/1.5135016 |
0.518 |
|
| 2020 |
Persson I, Armakavicius N, Bouhafs C, Stanishev V, Kühne P, Hofmann T, Schubert M, Rosen J, Yakimova R, Persson POÅ, Darakchieva V. Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC Apl Materials. 8: 011104. DOI: 10.1063/1.5134862 |
0.793 |
|
| 2020 |
Zhang H, Paskov PP, Kordina O, Chen J, Darakchieva V. N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality Physica B: Condensed Matter. 580: 411819. DOI: 10.1016/J.Physb.2019.411819 |
0.344 |
|
| 2020 |
Tran DQ, Blumenschein N, Mock A, Sukkaew P, Zhang H, Muth JF, Paskova T, Paskov PP, Darakchieva V. Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3 Physica B: Condensed Matter. 579: 411810. DOI: 10.1016/J.Physb.2019.411810 |
0.321 |
|
| 2020 |
Delgado Carrascon R, Tran DQ, Sukkaew P, Mock A, Ciechonski R, Ohlsson J, Zhu Y, Hultin O, Monemar B, Paskov PP, Samuelson L, Darakchieva V. Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates Physica Status Solidi (B). 257: 1900581. DOI: 10.1002/Pssb.201900581 |
0.358 |
|
| 2019 |
Chen S, Kang ESH, Shiran Chaharsoughi M, Stanishev V, Kühne P, Sun H, Wang C, Fahlman M, Fabiano S, Darakchieva V, Jonsson MP. Conductive polymer nanoantennas for dynamic organic plasmonics. Nature Nanotechnology. PMID 31819242 DOI: 10.1038/S41565-019-0583-Y |
0.792 |
|
| 2019 |
Halim J, Persson I, Moon EJ, Kuhne P, Darakchieva V, Persson P, Eklund P, Rosen J, Barsoum MW. Electronic and optical characterization of 2D Ti2C and Nb2C (MXene) thin films. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 30669136 DOI: 10.1088/1361-648X/Ab00A2 |
0.73 |
|
| 2019 |
Park S, Li Y, Fullager DB, Lata M, Kühne P, Darakchieva V, Hofmann T. Terahertz optical properties of polymethacrylates after thermal annealing Journal of Vacuum Science & Technology B. 37: 062924. DOI: 10.1116/1.5122801 |
0.753 |
|
| 2019 |
Mock A, Korlacki R, Knight S, Stokey M, Fritz A, Darakchieva V, Schubert M. Lattice dynamics of orthorhombic NdGaO3 Physical Review B. 99: 184302. DOI: 10.1103/Physrevb.99.184302 |
0.501 |
|
| 2019 |
Schubert M, Mock A, Korlacki R, Darakchieva V. Phonon order and reststrahlen bands of polar vibrations in crystals with monoclinic symmetry Physical Review B. 99: 41201. DOI: 10.1103/Physrevb.99.041201 |
0.52 |
|
| 2019 |
Hilfiker M, Kilic U, Mock A, Darakchieva V, Knight S, Korlacki R, Mauze A, Zhang Y, Speck J, Schubert M. Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1-x)2O3 (x ≤ 0.21) films Applied Physics Letters. 114: 231901. DOI: 10.1063/1.5097780 |
0.535 |
|
| 2019 |
Schubert M, Mock A, Korlacki R, Knight S, Galazka Z, Wagner G, Wheeler V, Tadjer M, Goto K, Darakchieva V. Longitudinal phonon plasmon mode coupling in β-Ga2O3 Applied Physics Letters. 114: 102102. DOI: 10.1063/1.5089145 |
0.553 |
|
| 2019 |
Eriksson MO, Khromov S, Paskov PP, Wang X, Yoshikawa A, Holtz PO, Monemar B, Darakchieva V. Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity Aip Advances. 9: 015114. DOI: 10.1063/1.5052432 |
0.344 |
|
| 2019 |
Chen S, Kühne P, Stanishev V, Knight S, Brooke R, Petsagkourakis I, Crispin X, Schubert M, Darakchieva V, Jonsson MP. On the anomalous optical conductivity dispersion of electrically conducting polymers: ultra-wide spectral range ellipsometry combined with a Drude–Lorentz model Journal of Materials Chemistry C. 7: 4350-4362. DOI: 10.1039/C8Tc06302H |
0.783 |
|
| 2018 |
Kuhne P, Armakavicius N, Stanishev V, Herzinger CM, Schubert M, Darakchieva V. Advanced Terahertz Frequency-Domain Ellipsometry Instrumentation for In Situ and Ex Situ Applications Ieee Transactions On Terahertz Science and Technology. 8: 257-270. DOI: 10.1109/Tthz.2018.2814347 |
0.788 |
|
| 2018 |
Armakavicius N, Stanishev V, Knight S, Kühne P, Schubert M, Darakchieva V. Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect Applied Physics Letters. 112: 082103. DOI: 10.1063/1.5018247 |
0.781 |
|
| 2018 |
Knight S, Mock A, Korlacki R, Darakchieva V, Monemar B, Kumagai Y, Goto K, Higashiwaki M, Schubert M. Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect Applied Physics Letters. 112: 012103. DOI: 10.1063/1.5011192 |
0.581 |
|
| 2018 |
Kang ESH, Chen S, Sardar S, Tordera D, Armakavicius N, Darakchieva V, Shegai T, Jonsson MP. Strong Plasmon–Exciton Coupling with Directional Absorption Features in Optically Thin Hybrid Nanohole Metasurfaces Acs Photonics. 5: 4046-4055. DOI: 10.1021/Acsphotonics.8B00679 |
0.778 |
|
| 2017 |
Knight S, Hofmann T, Bouhafs C, Armakavicius N, Kühne P, Stanishev V, Ivanov IG, Yakimova R, Wimer S, Schubert M, Darakchieva V. In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene. Scientific Reports. 7: 5151. PMID 28698648 DOI: 10.1038/S41598-017-05333-W |
0.799 |
|
| 2017 |
Mock A, Korlacki R, Briley C, Darakchieva V, Monemar B, Kumagai Y, Goto K, Higashiwaki M, Schubert M. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic
β−Ga2O3 Physical Review B. 96. DOI: 10.1103/Physrevb.96.245205 |
0.526 |
|
| 2017 |
Schöche S, Hofmann T, Nilsson D, Kakanakova-Georgieva A, Janzén E, Kühne P, Lorenz K, Schubert M, Darakchieva V. Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect Journal of Applied Physics. 121: 205701. DOI: 10.1063/1.4983765 |
0.787 |
|
| 2017 |
Bouhafs C, Zakharov A, Ivanov I, Giannazzo F, Eriksson J, Stanishev V, Kühne P, Iakimov T, Hofmann T, Schubert M, Roccaforte F, Yakimova R, Darakchieva V. Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC Carbon. 116: 722-732. DOI: 10.1016/J.Carbon.2017.02.026 |
0.791 |
|
| 2017 |
Armakavicius N, Bouhafs C, Stanishev V, Kühne P, Yakimova R, Knight S, Hofmann T, Schubert M, Darakchieva V. Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies Applied Surface Science. 421: 357-360. DOI: 10.1016/J.Apsusc.2016.10.023 |
0.802 |
|
| 2016 |
Schubert M, Kühne P, Darakchieva V, Hofmann T. Optical Hall effect-model description: tutorial. Journal of the Optical Society of America. a, Optics, Image Science, and Vision. 33: 1553-68. PMID 27505654 DOI: 10.1364/Josaa.33.001553 |
0.8 |
|
| 2016 |
Schubert M, Korlacki R, Knight S, Hofmann T, Schöche S, Darakchieva V, Janzén E, Monemar B, Gogova D, Thieu QT, Togashi R, Murakami H, Kumagai Y, Goto K, Kuramata A, et al. Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β -gallium oxide single crystals Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.125209 |
0.585 |
|
| 2016 |
Bouhafs C, Stanishev V, Zakharov AA, Hofmann T, Kühne P, Iakimov T, Yakimova R, Schubert M, Darakchieva V. Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111) Applied Physics Letters. 109: 203102. DOI: 10.1063/1.4967525 |
0.788 |
|
| 2016 |
Armakavicius N, Chen JT, Hofmann T, Knight S, Kühne P, Nilsson D, Forsberg U, Janzén E, Darakchieva V. Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect Physica Status Solidi (C) Current Topics in Solid State Physics. DOI: 10.1002/Pssc.201510214 |
0.786 |
|
| 2015 |
Knight S, Schöche S, Darakchieva V, Kühne P, Carlin JF, Grandjean N, Herzinger CM, Schubert M, Hofmann T. Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies. Optics Letters. 40: 2688-91. PMID 26076237 DOI: 10.1364/Ol.40.002688 |
0.8 |
|
| 2015 |
Knight S, Schöche S, Darakchieva V, Kühne P, Carlin JF, Grandjean N, Herzinger CM, Schubert M, Hofmann T. Cavity-enhanced optical Hall effect in twodimensional free charge carrier gases detected at terahertz frequencies Optics Letters. 40: 2688-2691. DOI: 10.1364/OL.40.002688 |
0.328 |
|
| 2015 |
Ben Sedrine N, Zukauskaite A, Birch J, Jensen J, Hultman L, Schöche S, Schubert M, Darakchieva V. Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 x 0.22) Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/41/415102 |
0.61 |
|
| 2015 |
Khromov S, Persson PO, Wang X, Yoshikawa A, Monemar B, Rosen J, Janzén E, Darakchieva V. Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN Applied Physics Letters. 106. DOI: 10.1063/1.4922301 |
0.328 |
|
| 2015 |
Bouhafs C, Darakchieva V, Persson IL, Tiberj A, Persson POÅ, Paillet M, Zahab AA, Landois P, Juillaguet S, Schöche S, Schubert M, Yakimova R. Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1) Journal of Applied Physics. 117. DOI: 10.1063/1.4908216 |
0.588 |
|
| 2014 |
Xie MY, Schubert M, Lu J, Persson POA, Stanishev V, Hsiao CL, Chen LC, Schaff WJ, Darakchieva V. Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.195306 |
0.568 |
|
| 2014 |
Junaid M, Sandström P, Palisaitis J, Darakchieva V, Hsiao CL, Persson POA, Hultman L, Birch J. Stress evolution during growth of GaN (0001)/Al2O3 (0001) by reactive dc magnetron sputter epitaxy Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/14/145301 |
0.308 |
|
| 2014 |
Xie MY, Ben Sedrine N, Schöche S, Hofmann T, Schubert M, Hung L, Monemar B, Wang X, Yoshikawa A, Wang K, Araki T, Nanishi Y, Darakchieva V. Effect of Mg doping on the structural and free-charge carrier properties of InN films Journal of Applied Physics. 115. DOI: 10.1063/1.4871975 |
0.563 |
|
| 2014 |
Schöche S, Hofmann T, Darakchieva V, Wang X, Yoshikawa A, Wang K, Araki T, Nanishi Y, Schubert M. Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry Thin Solid Films. 571: 384-388. DOI: 10.1016/J.Tsf.2014.01.051 |
0.584 |
|
| 2014 |
Yakimova R, Iakimov T, Yazdi G, Bouhafs C, Eriksson J, Zakharov A, Boosalis A, Schubert M, Darakchieva V. Morphological and electronic properties of epitaxial graphene on SiC Physica B: Condensed Matter. 439: 54-59. DOI: 10.1016/J.Physb.2013.12.048 |
0.575 |
|
| 2013 |
Kühne P, Darakchieva V, Yakimova R, Tedesco JD, Myers-Ward RL, Eddy CR, Gaskill DK, Herzinger CM, Woollam JA, Schubert M, Hofmann T. Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect. Physical Review Letters. 111: 077402. PMID 23992081 DOI: 10.1103/Physrevlett.111.077402 |
0.79 |
|
| 2013 |
Sedrine NB, Zukauskaite A, Birch J, Hultman L, Darakchieva V. Bandgap Engineering and Optical Constants of YxAl1-xN Alloys Japanese Journal of Applied Physics. 52: 08JM02. DOI: 10.7567/Jjap.52.08Jm02 |
0.379 |
|
| 2013 |
Schöche S, Kühne P, Hofmann T, Schubert M, Nilsson D, Kakanakova-Georgieva A, Janzén E, Darakchieva V. Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect Applied Physics Letters. 103: 212107. DOI: 10.1063/1.4833195 |
0.779 |
|
| 2013 |
Darakchieva V, Boosalis A, Zakharov AA, Hofmann T, Schubert M, Tiwald TE, Iakimov T, Vasiliauskas R, Yakimova R. Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111) Applied Physics Letters. 102: 213116. DOI: 10.1063/1.4808379 |
0.589 |
|
| 2013 |
Schöche S, Hofmann T, Darakchieva V, Ben Sedrine N, Wang X, Yoshikawa A, Schubert M. Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN Journal of Applied Physics. 113: 013502. DOI: 10.1063/1.4772625 |
0.602 |
|
| 2013 |
Furlan A, Gueorguiev G, Czigány Z, Darakchieva V, Braun S, Correia M, Högberg H, Hultman L. Structure and properties of phosphorus-carbide thin solid films Thin Solid Films. 548: 247-254. DOI: 10.1016/J.Tsf.2013.10.010 |
0.333 |
|
| 2012 |
Zhou M, Pasquale FL, Dowben PA, Boosalis A, Schubert M, Darakchieva V, Yakimova R, Kong L, Kelber JA. Direct graphene growth on Co3O4(111) by molecular beam epitaxy. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 072201. PMID 22223630 DOI: 10.1088/0953-8984/24/7/072201 |
0.589 |
|
| 2012 |
Schöche S, Hofmann T, Ben Sedrine N, Darakchieva V, Wang X, Yoshikawa A, Schubert M. Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN Mrs Proceedings. 1396. DOI: 10.1557/Opl.2012.86 |
0.581 |
|
| 2012 |
Boosalis A, Hofmann T, Darakchieva V, Yakimova R, Tiwald T, Schubert M. Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC Mrs Proceedings. 1407. DOI: 10.1557/Opl.2012.457 |
0.599 |
|
| 2012 |
Catarino N, Nogales E, Franco N, Darakchieva V, Miranda SMC, Méndez B, Alves E, Marques JG, Lorenz K. Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN Epl. 97. DOI: 10.1209/0295-5075/97/68004 |
0.346 |
|
| 2012 |
Žukauskaitė A, Tholander C, Palisaitis J, Persson POÅ, Darakchieva V, Sedrine NB, Tasnádi F, Alling B, Birch J, Hultman L. YxAl1−xN thin films Journal of Physics D: Applied Physics. 45: 422001. DOI: 10.1088/0022-3727/45/42/422001 |
0.304 |
|
| 2012 |
Hofmann T, Kühne P, Schöche S, Chen J, Forsberg U, Janzén E, Ben Sedrine N, Herzinger CM, Woollam JA, Schubert M, Darakchieva V. Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 101: 192102. DOI: 10.1063/1.4765351 |
0.794 |
|
| 2012 |
Boosalis A, Hofmann T, Darakchieva V, Yakimova R, Schubert M. Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry Applied Physics Letters. 101: 11912. DOI: 10.1063/1.4732159 |
0.582 |
|
| 2011 |
Junaid M, Lundin D, Palisaitis J, Hsiao C, Darakchieva V, Jensen J, Persson POÅ, Sandström P, Lai W, Chen L, Chen K, Helmersson U, Hultman L, Birch J. Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering Journal of Applied Physics. 110: 123519. DOI: 10.1063/1.3671560 |
0.313 |
|
| 2011 |
Darakchieva V, Lorenz K, Xie MY, Alves E, Hsiao CL, Chen LC, Tu LW, Schaff WJ, Yamaguchi T, Nanishi Y. Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations Journal of Applied Physics. 110. DOI: 10.1063/1.3642969 |
0.317 |
|
| 2011 |
Ben Sedrine N, Bouhafs C, Schubert M, Harmand J, Chtourou R, Darakchieva V. Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry Thin Solid Films. 519: 2838-2842. DOI: 10.1016/J.Tsf.2010.12.056 |
0.536 |
|
| 2011 |
Palisaitis J, Hsiao C, Junaid M, Xie M, Darakchieva V, Carlin J, Grandjean N, Birch J, Hultman L, Persson POÅ. Standard‐free composition measurements of Alx In1–xN by low‐loss electron energy loss spectroscopy Physica Status Solidi-Rapid Research Letters. 5: 50-52. DOI: 10.1002/Pssr.201004407 |
0.301 |
|
| 2011 |
Ben Sedrine N, Darakchieva V, Lindgren D, Monemar B, Che SB, Ishitani Y, Yoshikawa A. Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry Physica Status Solidi (C). 8: 1629-1632. DOI: 10.1002/Pssc.201000792 |
0.398 |
|
| 2011 |
Darakchieva V, Lorenz K, Xie M, Alves E, Schaff WJ, Yamaguchi T, Nanishi Y, Ruffenach S, Moret M, Briot O. Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN Physica Status Solidi (a). 209: 91-94. DOI: 10.1002/Pssa.201100175 |
0.36 |
|
| 2011 |
Darakchieva V, Xie MY, Rogalla D, Becker HW, Lorenz K, Alves E, Ruffenach S, Moret M, Briot O. Free electron properties and hydrogen in InN grown by MOVPE Physica Status Solidi (a) Applications and Materials Science. 208: 1179-1182. DOI: 10.1002/Pssa.201001151 |
0.353 |
|
| 2010 |
Darakchieva V, Xie M, Franco N, Giuliani F, Nunes B, Alves E, Hsiao CL, Chen LC, Yamaguchi T, Takagi Y, Kawashima K, Nanishi Y. Structural anisotropy of nonpolar and semipolar InN epitaxial layers Journal of Applied Physics. 108: 073529. DOI: 10.1063/1.3487923 |
0.336 |
|
| 2010 |
Darakchieva V, Lorenz K, Barradas NP, Alves E, Monemar B, Schubert M, Franco N, Hsiao CL, Chen LC, Schaff WJ, Tu LW, Yamaguchi T, Nanishi Y. Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material Applied Physics Letters. 96. DOI: 10.1063/1.3327333 |
0.544 |
|
| 2010 |
Lorenz K, Magalhães S, Franco N, Barradas NP, Darakchieva V, Alves E, Pereira S, Correia MR, Munnik F, Martin RW, O'Donnell KP, Watson IM. Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties Physica Status Solidi (B) Basic Research. 247: 1740-1746. DOI: 10.1002/Pssb.200983656 |
0.38 |
|
| 2009 |
Darakchieva V, Schubert M, Hofmann T, Monemar B, Hsiao C, Liu T, Chen L, Schaff WJ, Takagi Y, Nanishi Y. Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry Applied Physics Letters. 95: 202103. DOI: 10.1063/1.3261731 |
0.551 |
|
| 2009 |
Lorenz K, Roqan IS, Franco N, O’Donnell KP, Darakchieva V, Alves E, Trager-Cowan C, Martin RW, As DJ, Panfilova M. Europium doping of zincblende GaN by ion implantation Journal of Applied Physics. 105: 113507. DOI: 10.1063/1.3138806 |
0.308 |
|
| 2009 |
Darakchieva V, Hofmann T, Schubert M, Sernelius BE, Monemar B, Persson POA, Giuliani F, Alves E, Lu H, Schaff WJ. Free electron behavior in InN: On the role of dislocations and surface electron accumulation Applied Physics Letters. 94: 22109. DOI: 10.1063/1.3065030 |
0.575 |
|
| 2009 |
Darakchieva V, Barradas NP, Xie MY, Lorenz K, Alves E, Schubert M, Persson POA, Giuliani F, Munnik F, Hsiao CL, Tu LW, Schaff WJ. Role of impurities and dislocations for the unintentional n-type conductivity in InN Physica B: Condensed Matter. 404: 4476-4481. DOI: 10.1016/J.Physb.2009.09.042 |
0.564 |
|
| 2009 |
Honda Y, Hikosaka T, Yamaguchi M, Sawaki N, Pozina G, Karlsson F, Darakchieva V, Paskov P, Monemar B. DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Physica Status Solidi (C). 6: S772-S775. DOI: 10.1002/Pssc.200880932 |
0.326 |
|
| 2008 |
Darakchieva V, Beckers M, Xie M, Hultman L, Monemar B, Carlin J, Feltin E, Gonschorek M, Grandjean N. Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al1−xInxN films grown on sapphire Journal of Applied Physics. 103: 103513. DOI: 10.1063/1.2924426 |
0.321 |
|
| 2008 |
Gonschorek M, Carlin J-, Feltin E, Py MA, Grandjean N, Darakchieva V, Monemar B, Lorenz M, Ramm G. Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23) Journal of Applied Physics. 103: 93714. DOI: 10.1063/1.2917290 |
0.318 |
|
| 2008 |
Darakchieva V, Monemar B, Usui A, Saenger M, Schubert M. Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy Journal of Crystal Growth. 310: 959-965. DOI: 10.1016/J.Jcrysgro.2007.11.130 |
0.577 |
|
| 2008 |
Hofmann T, Darakchieva V, Monemar B, Lu H, Schaff W, Schubert M. Optical Hall Effect in Hexagonal InN Journal of Electronic Materials. 37: 611-615. DOI: 10.1007/S11664-008-0385-8 |
0.619 |
|
| 2008 |
Darakchieva V, Beckers M, Hultman L, Xie M, Monemar B, Carlin J, Grandjean N. Strain and compositional analyses of Al-rich Al1–xInxN films grown by MOVPE: impact on the applicability of Vegard's rule Physica Status Solidi (C). 5: 1859-1862. DOI: 10.1002/Pssc.200778706 |
0.332 |
|
| 2008 |
Darakchieva V. Infrared generalized ellipsometry on non-polar and superlattice group-III nitride films: strain and phonon anisotropy Physica Status Solidi (a). 205: 905-913. DOI: 10.1002/Pssa.200777893 |
0.382 |
|
| 2007 |
Darakchieva V, Paskova T, Schubert M, Arwin H, Paskov PP, Monemar B, Hommel D, Heuken M, Off J, Scholz F, Haskell BA, Fini PT, Speck JS, Nakamura S. Anisotropic strain and phonon deformation potentials in GaN Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.195217 |
0.526 |
|
| 2007 |
Darakchieva V, Monemar B, Usui A. On the lattice parameters of GaN Applied Physics Letters. 91: 031911. DOI: 10.1063/1.2753122 |
0.331 |
|
| 2007 |
Darakchieva V, Paskova T, Schubert M, Paskov PP, Arwin H, Monemar B, Hommel D, Heuken M, Off J, Haskell BA, Fini PT, Speck JS, Nakamura S. Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers Journal of Crystal Growth. 300: 233-238. DOI: 10.1016/J.Jcrysgro.2006.11.023 |
0.564 |
|
| 2007 |
Darakchieva V, Monemar B, Paskova T, Einfeldt S, Hommel D, Lourdudoss S. Phonons in strained AlGaN/GaN superlattices Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 170-174. DOI: 10.1002/Pssc.200673582 |
0.316 |
|
| 2006 |
Paskova T, Paskov PP, Darakchieva V, Kroeger R, Hommel D, Monemar B, Lourdudoss S, Preble E, Hanser A, Williams MN, Tutor M. Strain-free Low-defect-density Bulk GaN with Nonpolar Orientations Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I03-04 |
0.373 |
|
| 2006 |
Paskova T, Kroeger R, Figge S, Hommel D, Darakchieva V, Monemar B, Preble E, Hanser A, Williams NM, Tutor M. High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire Applied Physics Letters. 89. DOI: 10.1063/1.2236901 |
0.359 |
|
| 2006 |
Paskova T, Hommel D, Paskov PP, Darakchieva V, Monemar B, Bockowski M, Suski T, Grzegory I, Tuomisto F, Saarinen K, Ashkenov N, Schubert M. Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy Applied Physics Letters. 88: 141909. DOI: 10.1063/1.2192149 |
0.547 |
|
| 2006 |
Hofmann T, Chavdarov T, Darakchieva V, Lu H, Schaff WJ, Schubert M. Anisotropy of the Γ-point effective mass and mobility in hexagonal InN Physica Status Solidi (C). 3: 1854-1857. DOI: 10.1002/Pssc.200565467 |
0.576 |
|
| 2006 |
Paskova T, Darakchieva V, Paskov PP, Monemar B, Bukowski M, Suski T, Ashkenov N, Schubert M, Hommel D. Bending in HVPE GaN free-standing films: Effects of laser lift-off, polishing and high-pressure annealing Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1475-1478. DOI: 10.1002/Pssc.200565412 |
0.55 |
|
| 2006 |
Darakchieva V, Paskova T, Paskov PP, Arwin H, Schubert M, Monemar B, Figge S, Homme D, Haskell BA, Fini PT, Nakamura S. Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN Physica Status Solidi (B) Basic Research. 243: 1594-1598. DOI: 10.1002/Pssb.200565400 |
0.548 |
|
| 2005 |
Darakchieva V, Valcheva E, Paskov PP, Schubert M, Paskova T, Monemar B, Amano H, Akasaki I. Phonon mode behavior in strained wurtziteAlN∕GaNsuperlattices Physical Review B. 71. DOI: 10.1103/Physrevb.71.115329 |
0.549 |
|
| 2005 |
Darakchieva V, Paskova T, Paskov PP, Monemar B, Ashkenov N, Schubert M. Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates Journal of Applied Physics. 97: 013517. DOI: 10.1063/1.1823024 |
0.536 |
|
| 2005 |
Paskova T, Darakchieva V, Paskov P, Birch J, Valcheva E, Persson P, Arnaudov B, Tungasmitta S, Monemar B. Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers Journal of Crystal Growth. 281: 55-61. DOI: 10.1016/J.Jcrysgro.2005.03.013 |
0.391 |
|
| 2005 |
Paskova T, Darakchieva V, Paskov PP, Birch J, Valcheva E, Persson PO�, Arnaudov B, Tungasmita S, Monemar B. Nonpolara-plane HVPE GaN: growth and in-plane anisotropic properties Physica Status Solidi (C). 2: 2027-2031. DOI: 10.1002/Pssc.200461481 |
0.353 |
|
| 2005 |
Paskov PP, Bergman JP, Darakchieva V, Paskova T, Monemar B, Iwaya M, Kamiyama S, Amano H, Akasaki I. Photoluminescence of GaN/AlN superlattices grown by MOCVD Physica Status Solidi (C). 2: 2345-2348. DOI: 10.1002/Pssc.200461367 |
0.337 |
|
| 2004 |
Paskova T, Suski T, Bockowski M, Paskov P, Darakchieva V, Monemar B, Tuomisto F, Saarinen K, Ashkenov N, Schubert M, Roder C, Hommel D. High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E8.18 |
0.562 |
|
| 2004 |
Darakchieva V, Birch J, Schubert M, Paskova T, Tungasmita S, Wagner G, Kasic A, Monemar B. Strain-related structural and vibrational properties of thin epitaxialAlNlayers Physical Review B. 70. DOI: 10.1103/Physrevb.70.045411 |
0.55 |
|
| 2004 |
Darakchieva V, Paskov PP, Valcheva E, Paskova T, Monemar B, Schubert M, Lu H, Schaff WJ. Deformation potentials of the E1(TO) and E2 modes of InN Applied Physics Letters. 84: 3636-3638. DOI: 10.1063/1.1738520 |
0.5 |
|
| 2004 |
Atanassov A, Baleva M, Darakchieva V, Goranova E. Grazing incident asymmetric X-ray diffraction of β-FeSi2 layers, produced by ion beam synthesis Vacuum. 76: 277-280. DOI: 10.1016/J.Vacuum.2004.07.035 |
0.583 |
|
| 2004 |
Darakchieva V, Paskov P, Valcheva E, Paskova T, Schubert M, Bundesmann C, Lu H, Schaff W, Monemar B. Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties Superlattices and Microstructures. 36: 573-580. DOI: 10.1016/J.Spmi.2004.09.014 |
0.552 |
|
| 2004 |
Paskova T, Paskov P, Goldys E, Valcheva E, Darakchieva V, Södervall U, Godlewski M, Zielinski M, Hautakangas S, Saarinen K, Carlström C, Wahab Q, Monemar B. Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy Journal of Crystal Growth. 273: 118-128. DOI: 10.1016/J.Jcrysgro.2004.09.025 |
0.328 |
|
| 2004 |
Paskova T, Darakchieva V, Valcheva E, Paskov PP, Ivanov IG, Monemar B, Böttcher T, Roder C, Hommel D. Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending Journal of Electronic Materials. 33: 389-394. DOI: 10.1007/S11664-004-0189-4 |
0.342 |
|
| 2004 |
Monemar B, Paskov PP, Haradizadeh H, Bergman JP, Valcheva E, Darakchieva V, Arnaudov B, Paskova T, Holtz PO, Pozina G, Kamiyama S, Iwaya M, Amano H, Akasaki I. Optical investigation of AlGaN/GaN quantum wells and superlattices Physica Status Solidi (a). 201: 2251-2258. DOI: 10.1002/Pssa.200404849 |
0.425 |
|
| 2004 |
Paskova T, Paskov PP, Valcheva E, Darakchieva V, Birch J, Kasic A, Arnaudov B, Tungasmita S, Monemar B. Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices Physica Status Solidi (a). 201: 2265-2270. DOI: 10.1002/Pssa.200404818 |
0.385 |
|
| 2003 |
Darakchieva V, Paskov PP, Schubert M, Valcheva E, Paskova T, Arwin H, Monemar B, Amano H, Akasaki I. Strain evolution and phonons in AlN/GaN superlattices Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.60 |
0.561 |
|
| 2003 |
Darakchieva V, Paskov PP, Paskova T, Valcheva E, Monemar B, Heuken M. Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy Applied Physics Letters. 82: 703-705. DOI: 10.1063/1.1542931 |
0.333 |
|
| 2003 |
Ashkenov N, Mbenkum BN, Bundesmann C, Riede V, Lorenz M, Spemann D, Kaidashev EM, Kasic A, Schubert M, Grundmann M, Wagner G, Neumann H, Darakchieva V, Arwin H, Monemar B. Infrared dielectric functions and phonon modes of high-quality ZnO films Journal of Applied Physics. 93: 126-133. DOI: 10.1063/1.1526935 |
0.59 |
|
| 2003 |
Paskova T, Darakchieva V, Valcheva E, Paskov P, Monemar B, Heuken M. In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques Journal of Crystal Growth. 257: 1-6. DOI: 10.1016/S0022-0248(03)01374-5 |
0.351 |
|
| 2003 |
Darakchieva V, Schubert M, Birch J, Kasic A, Tungasmita S, Paskova T, Monemar B. Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior Physica B-Condensed Matter. 340: 416-420. DOI: 10.1016/J.Physb.2003.09.059 |
0.556 |
|
| 2003 |
Paskova T, Paskov PP, Darakchieva V, Goldys EM, Södervall U, Valcheva E, Arnaudov B, Monemar B. Free‐Standing HVPE‐GaN Quasi‐Substrates: Impurity and Strain Distributions Physica Status Solidi (C). 209-213. DOI: 10.1002/Pssc.200390025 |
0.35 |
|
| 2003 |
Darakchieva V, Paskov PP, Schubert M, Paskova T, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I. Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy Physica Status Solidi (C). 2614-2617. DOI: 10.1002/Pssc.200303408 |
0.585 |
|
| 2003 |
Kasic A, Schubert M, Off J, Kuhn B, Scholz F, Einfeldt S, Böttcher T, Hommel D, As DJ, Köhler U, Dadgar A, Krost A, Saito Y, Nanishi Y, Correia MR, ... ... Darakchieva V, et al. Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry Physica Status Solidi C: Conferences. 1750-1769. DOI: 10.1002/Pssc.200303135 |
0.606 |
|
| 2003 |
Paskova T, Darakchieva V, Valcheva E, Paskov PP, Monemar B, Heuken M. Growth of GaN ona-plane sapphire: in-plane epitaxial relationships and lattice parameters Physica Status Solidi (B). 240: 318-321. DOI: 10.1002/Pssb.200303368 |
0.332 |
|
| 2003 |
Darakchieva V, Paskova T, Paskov PP, Monemar B, Ashkenov N, Schubert M. Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers Physica Status Solidi (a). 195: 516-522. DOI: 10.1002/Pssa.200306145 |
0.535 |
|
| 2002 |
Monemar B, Paskov P, Bergman J, Pozina G, Darakchieva V, Iwaya M, Kamiyama S, Amano H, Akasaki I. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells Mrs Internet Journal of Nitride Semiconductor Research. 7: 1. DOI: 10.1557/S1092578300000338 |
0.38 |
|
| 2002 |
Darakchieva V, Surtchev M, Goranova E, Baleva M. Effect of rapid thermal annealing on the structure of ion beam synthesized β-FeSi2 Vacuum. 69: 449-454. DOI: 10.1016/S0042-207X(02)00375-5 |
0.577 |
|
| 2002 |
Baleva M, Goranova E, Darakchieva V, Kossionides S, Kokkosis M, Jordanov P. Influence of grain size on the optical conductivity of β-FeSi2 layers Vacuum. 69: 425-429. DOI: 10.1016/S0042-207X(02)00369-X |
0.665 |
|
| 2002 |
Paskova T, Darakchieva V, Paskov P, Södervall U, Monemar B. Growth and separation related properties of HVPE-GaN free-standing films Journal of Crystal Growth. 246: 207-214. DOI: 10.1016/S0022-0248(02)01743-8 |
0.361 |
|
| 2002 |
Darakchieva V, Birch J, Paskov P, Tungasmita S, Paskova T, Monemar B. Strain Evolution in High Temperature AlN Buffer Layers for HVPE-GaN Growth Physica Status Solidi (a). 190: 59-64. DOI: 10.1002/1521-396X(200203)190:1<59::Aid-Pssa59>3.0.Co;2-F |
0.335 |
|
| 2002 |
Paskov P, Darakchieva V, Paskova T, Holtz P, Monemar B. Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire Physica Status Solidi (B). 234: 892-896. DOI: 10.1002/1521-3951(200212)234:3<892::Aid-Pssb892>3.0.Co;2-T |
0.364 |
|
| 2001 |
György E, Mihailescu IN, Baleva M, Trifonova EP, Abrashev M, Darakchieva V, Zocco A, Perrone A. Journal of Materials Science. 36: 1951-1956. DOI: 10.1023/A:1017502126331 |
0.595 |
|
| 2001 |
Paskova T, Paskov P, Goldys E, Darakchieva V, S�dervall U, Godlewski M, Zielinski M, Valcheva E, Carlstr�m C, Wahab Q, Monemar B. Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN Physica Status Solidi (a). 188: 447-451. DOI: 10.1002/1521-396X(200111)188:1<447::Aid-Pssa447>3.0.Co;2-9 |
0.307 |
|
| 2001 |
Paskova T, Paskov P, Darakchieva V, Tungasmita S, Birch J, Monemar B. Defect Reduction in HVPE Growth of GaN and Related Optical Spectra Physica Status Solidi (a). 183: 197-203. DOI: 10.1002/1521-396X(200101)183:1<197::Aid-Pssa197>3.0.Co;2-9 |
0.384 |
|
| 2000 |
Darakchieva V, Baleva M, Surtchev M, Goranova E. Structural and optical analysis ofβ−FeSi2thin layers prepared by ion-beam synthesis and solid-state reaction Physical Review B. 62: 13057-13063. DOI: 10.1103/Physrevb.62.13057 |
0.617 |
|
| 2000 |
Baleva M, Darakchieva V, Goranova E, Trifonova E. Microhardness characterization of structures obtained by iron–silicon solid-state reaction Materials Science and Engineering: B. 78: 131-134. DOI: 10.1016/S0921-5107(00)00527-4 |
0.593 |
|
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