Spyridon Skordas, Ph.D.
Affiliations: | 2004 | State University of New York, Albany, Albany, NY, United States |
Area:
Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Spyridon Skordas"Parents
Sign in to add mentorAlain E. Kaloyeros | grad student | 2004 | SUNY Albany | |
(Metal-organic chemical vapor deposition of aluminum oxide for advanced gate dielectric applications.) |
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Publications
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Batra P, Skordas S, LaTulipe D, et al. (2014) Three-dimensional wafer stacking using Cu TSV integrated with 45 nm high performance SOI-CMOS embedded DRAM technology Journal of Low Power Electronics and Applications. 4: 77-89 |
Lin W, Shi L, Yao Y, et al. (2014) Low-temperature oxide wafer bonding for 3-D integration: Chemistry of bulk oxide matters Ieee Transactions On Semiconductor Manufacturing. 27: 426-430 |
Papadatos F, Consiglio S, Skordas S, et al. (2007) A study of ruthenium ultrathin film nucleation on pretreated SiO2 and Hf-silicate dielectric surfaces Journal of Materials Research. 22: 2254-2264 |
Consiglio S, Papadatos F, Naczas S, et al. (2006) Metallorganic chemical vapor deposition of hafnium silicate thin films using a dual source dimethyl-alkylamido approach Journal of the Electrochemical Society. 153 |
Skordas S, Papadatos F, Consiglio S, et al. (2005) Electrical properties of ultrathin Al2O3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications Journal of Materials Research. 20: 1536-1543 |
Papadatos F, Consiglio S, Skordas S, et al. (2004) Chemical vapor deposition of ruthenium and ruthenium oxide thin films for advanced complementary metal-oxide semiconductor gate electrode applications Journal of Materials Research. 19: 2947-2955 |
Skordas S, Papadatos F, Nuesca G, et al. (2003) Low-temperature metalorganic chemical vapor deposition of Al2O3 for advanced complementary metal-oxide semiconductor gate dielectric applications Journal of Materials Research. 18: 1868-1876 |
Skordas S, Papadatos F, Consiglio S, et al. (2002) Interface Quality and Electrical Performance of Low-Temperature Metal Organic Chemical Vapor Deposition Aluminum Oxide Thin Films for Advanced CMOS Gate Dielectric Applications Mrs Proceedings. 745 |
Papadatos F, Skordas S, Consiglio S, et al. (2002) Characterization of ruthenium and ruthenium oxide thin films deposited by chemical vapor deposition for CMOS gate electrode applications Materials Research Society Symposium - Proceedings. 745: 61-66 |
Skordas S, Papadatos F, Patel Z, et al. (2002) Low temperature metal organic chemical vapor deposition of aluminum oxide thin films for advanced CMOS gate dielectric applications Materials Research Society Symposium - Proceedings. 716: 183-188 |