| Year |
Citation |
Score |
| 2021 |
Tang A, Kumar A, Jaikissoon M, Saraswat K, Wong HP, Pop E. Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS. Acs Applied Materials & Interfaces. PMID 34427445 DOI: 10.1021/acsami.1c06812 |
0.308 |
|
| 2020 |
Xue M, Nazif KN, Lyu Z, Jiang J, Lu C, Lee N, Zang K, Chen Y, Zheng T, Kamins TI, Brongersma ML, Saraswat KC, Harris JS. Corrigendum to “Free-standing 2.7 μm thick ultrathin crystalline silicon solar cell with efficiency above 12.0%” Nano Energy, volume 70, April 2020, 104466 Nano Energy. 72: 104709. DOI: 10.1016/J.Nanoen.2020.104709 |
0.303 |
|
| 2020 |
Xue M, Nazif KN, Lyu Z, Jiang J, Lu C, Lee N, Zang K, Chen Y, Zheng T, Kamins TI, Brongersma ML, Saraswat KC, Harris JS. Free-standing 2.7 μm thick ultrathin crystalline silicon solar cell with efficiency above 12.0% Nano Energy. 70: 104466. DOI: 10.1016/J.Nanoen.2020.104466 |
0.411 |
|
| 2019 |
Kim SG, Kim SH, Park J, Kim GS, Park JH, Saraswat KC, Kim J, Yu HY. Infrared Detectable MoS Phototransistor and Its Application to Artificial Multi-Level Optic-Neural Synapse. Acs Nano. PMID 31469532 DOI: 10.1021/Acsnano.9B03683 |
0.349 |
|
| 2019 |
Kumar A, Islam R, Pramanik D, Saraswat K. On the limit of defect doping in transition metal oxides Journal of Vacuum Science and Technology. 37: 21505. DOI: 10.1116/1.5055563 |
0.383 |
|
| 2019 |
Gupta S, Tietz S, Vuckovic J, Saraswat K. Silicon-Compatible Fabrication of Inverse Woodpile Photonic Crystals with a Complete Band Gap Acs Photonics. 6: 368-373. DOI: 10.1021/Acsphotonics.8B01000 |
0.37 |
|
| 2018 |
Islam R, Saraswat K. Limitation of Optical Enhancement in Ultra-thin Solar Cells Imposed by Contact Selectivity. Scientific Reports. 8: 8863. PMID 29891992 DOI: 10.1038/S41598-018-27155-0 |
0.304 |
|
| 2018 |
Xue M, Islam R, Chen Y, Chen J, Lu C, Mitchell Pleus A, Tae C, Xu K, Liu Y, Kamins TI, Saraswat KC, Harris JS. Carrier-selective interlayer materials for silicon solar cell contacts Journal of Applied Physics. 123: 143101. DOI: 10.1063/1.5020056 |
0.374 |
|
| 2017 |
Xue M, Islam R, Meng AC, Lyu Z, Lu CY, Tae C, Braun MR, Zang K, McIntyre PC, Kamins TI, Saraswat KC, Harris JS. Contact Selectivity Engineering in 2 μm Thick Ultrathin c-Si Solar Cell using Transition Metal Oxides Achieving Efficiency of 10.8. Acs Applied Materials & Interfaces. PMID 29124928 DOI: 10.1021/Acsami.7B12886 |
0.42 |
|
| 2017 |
El Atab N, Ulusoy Ghobadi G, Ghobadi A, Suh J, Islam R, Okyay AK, Saraswat KC, Nayfeh A. Cubic-phase zirconia nano-islands growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices. Nanotechnology. PMID 28832335 DOI: 10.1088/1361-6528/Aa87E5 |
0.705 |
|
| 2017 |
Shulaker MM, Hills G, Park RS, Howe RT, Saraswat K, Wong HP, Mitra S. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip. Nature. 547: 74-78. PMID 28682331 DOI: 10.1038/Nature22994 |
0.362 |
|
| 2017 |
Islam R, Chen G, Ramesh P, Suh J, Fuchigami N, Lee D, Littau KA, Weiner K, Collins RT, Saraswat KC. Investigation of the Changes in Electronic Properties of Nickel Oxide (NiOx) due to UV/Ozone Treatment. Acs Applied Materials & Interfaces. PMID 28447776 DOI: 10.1021/Acsami.7B01629 |
0.78 |
|
| 2017 |
English CD, Shine G, Dorgan VE, Saraswat KC, Pop E. Correction to Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition. Nano Letters. PMID 28367629 DOI: 10.1021/Acs.Nanolett.7B01337 |
0.349 |
|
| 2017 |
Barth M, Kumar A, Warner JH, Bennett BR, Cress CD, Boos JB, Roche NJ, Raine M, Gaillardin M, Paillet P, McMorrow D, Saraswat K, Datta S. Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- $\kappa $ Dielectric Ieee Transactions On Nuclear Science. 64: 434-440. DOI: 10.1109/Tns.2016.2637923 |
0.336 |
|
| 2017 |
El-Atab N, Saadat I, Saraswat K, Nayfeh A. Nanoislands-Based Charge Trapping Memory: A Scalability Study Ieee Transactions On Nanotechnology. 16: 1143-1146. DOI: 10.1109/Tnano.2017.2764745 |
0.56 |
|
| 2017 |
Shine G, Saraswat KC. Analysis of Atomistic Dopant Variation and Fermi Level Depinning in Nanoscale Contacts Ieee Transactions On Electron Devices. 64: 3768-3774. DOI: 10.1109/Ted.2017.2720183 |
0.333 |
|
| 2017 |
Morea M, Brendel CE, Zang K, Suh J, Fenrich CS, Huang Y, Chung H, Huo Y, Kamins TI, Saraswat KC, Harris JS. Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors Applied Physics Letters. 110: 091109. DOI: 10.1063/1.4977878 |
0.37 |
|
| 2016 |
English CD, Shine G, Dorgan VE, Saraswat KC, Pop E. Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition. Nano Letters. PMID 27232636 DOI: 10.1021/Acs.Nanolett.6B01309 |
0.378 |
|
| 2016 |
Petykiewicz J, Nam D, Sukhdeo DS, Gupta S, Buckley SM, Piggott AY, Vuckovic J, Saraswat KC. Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities. Nano Letters. PMID 26907359 DOI: 10.1021/Acs.Nanolett.5B03976 |
0.315 |
|
| 2016 |
Islam R, Nazif KN, Saraswat KC. Si Heterojunction Solar Cells: A Simulation Study of the Design Issues Ieee Transactions On Electron Devices. 63: 4788-4795. DOI: 10.1109/Ted.2016.2613057 |
0.388 |
|
| 2016 |
Sukhdeo DS, Kim Y, Gupta S, Saraswat KC, Dutt BR, Nam D. Anomalous threshold reduction from <100> uniaxial strain for a low-threshold Ge laser Optics Communications. 379: 32-35. DOI: 10.1016/J.Optcom.2016.05.030 |
0.304 |
|
| 2016 |
Sukhdeo DS, Gupta S, Saraswat KC, Dutt B, Nam D. Impact of minority carrier lifetime on the performance of strained germanium light sources Optics Communications. 364: 233-237. DOI: 10.1016/J.Optcom.2015.11.060 |
0.303 |
|
| 2015 |
Sukhdeo DS, Petykiewicz J, Gupta S, Kim D, Woo S, Kim Y, Vučković J, Saraswat KC, Nam D. Ge microdisk with lithographically-tunable strain using CMOS-compatible process. Optics Express. 23: 33249-54. PMID 26831991 DOI: 10.1364/Oe.23.033249 |
0.312 |
|
| 2015 |
Nam JH, Afshinmanesh F, Nam D, Jung WS, Kamins TI, Brongersma ML, Saraswat KC. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon. Optics Express. 23: 15816-23. PMID 26193560 DOI: 10.1364/Oe.23.015816 |
0.46 |
|
| 2015 |
Kim Y, Petykiewicz J, Gupta S, Vuckovic J, Saraswat KC, Nam D. Strained Ge Light Emitter with Ge on Dual Insulators for Improved Thermal Conduction and Optical Insulation Ieie Transactions On Smart Processing and Computing. 4: 318-323. DOI: 10.5573/Ieiespc.2015.4.5.318 |
0.356 |
|
| 2015 |
Nam JH, Afshinmanesh F, Nam D, Jung WS, Kamins TI, Brongersma ML, Saraswat KC. Monolithic integration of germanium-oninsulator p-i-n photodetector on silicon Optics Express. 23: 15816-15823. DOI: 10.1364/OE.23.015816 |
0.352 |
|
| 2015 |
Shang CK, Chen R, Gupta S, Huang YC, Huo Y, Sanchez E, Kim Y, Kamins TI, Saraswat KC, Harris JS. Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2080146 |
0.34 |
|
| 2015 |
Islam R, Ramesh P, Nam JH, Saraswat KC. Nickel oxide carrier selective contacts for silicon solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355921 |
0.317 |
|
| 2015 |
Kim GS, Kim SH, Kim JK, Shin C, Park JH, Saraswat KC, Cho BJ, Yu HY. Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET Ieee Electron Device Letters. 36: 745-747. DOI: 10.1109/Led.2015.2440434 |
0.61 |
|
| 2015 |
Jung W, Nam JH, Pal A, Lee JH, Na Y, Kim Y, Lee JH, Saraswat KC. Reduction of Surface Roughness in Epitaxially Grown Germanium by Controlled Thermal Oxidation Ieee Electron Device Letters. 36: 297-299. DOI: 10.1109/Led.2015.2404814 |
0.347 |
|
| 2015 |
Hyung Nam J, Alkis S, Nam D, Afshinmanesh F, Shim J, Park JH, Brongersma M, Okyay AK, Kamins TI, Saraswat K. Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon Journal of Crystal Growth. 416: 21-27. DOI: 10.1016/J.Jcrysgro.2014.11.004 |
0.654 |
|
| 2014 |
Nam D, Kang JH, Brongersma ML, Saraswat KC. Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence. Optics Letters. 39: 6205-8. PMID 25361315 DOI: 10.1364/Ol.39.006205 |
0.408 |
|
| 2014 |
Chen R, Gupta S, Huang YC, Huo Y, Rudy CW, Sanchez E, Kim Y, Kamins TI, Saraswat KC, Harris JS. Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics. Nano Letters. 14: 37-43. PMID 24299070 DOI: 10.1021/Nl402815V |
0.364 |
|
| 2014 |
Gupta S, Gong X, Zhang R, Yeo YC, Takagi S, Saraswat KC. New materials for post-Si computing: Ge and GeSn devices Mrs Bulletin. 39: 678-686. DOI: 10.1557/Mrs.2014.163 |
0.438 |
|
| 2014 |
Sukhdeo DS, Nam D, Kang JH, Brongersma ML, Saraswat KC. Direct bandgap germanium-on-silicon inferred from 5.7% (100) uniaxial tensile strain 〈Invited〉 Photonics Research. 2: A8-A13. DOI: 10.1364/Prj.2.0000A8 |
0.357 |
|
| 2014 |
Gupta S, Moroz V, Lee S, Lu Q, Saraswat KC. 7-nm FinFET CMOS design enabled by stress engineering using Si, Ge, and Sn Ieee Transactions On Electron Devices. 61: 1222-1230. DOI: 10.1109/Ted.2014.2311129 |
0.377 |
|
| 2014 |
Kim JK, Kim GS, Nam H, Shin C, Park JH, Cho BJ, Saraswat KC, Yu HY. The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances Ieee Electron Device Letters. 35: 1185-1187. DOI: 10.1109/Led.2014.2364574 |
0.597 |
|
| 2014 |
Kim GS, Kim JK, Kim SH, Jo J, Shin C, Park JH, Saraswat KC, Yu HY. Specific contact resistivity reduction through Ar plasma-treated TiO2-x interfacial layer to metal/Ge contact Ieee Electron Device Letters. 35: 1076-1078. DOI: 10.1109/Led.2014.2354679 |
0.624 |
|
| 2014 |
Kim JK, Kim GS, Shin C, Park JH, Saraswat KC, Yu HY. Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure Ieee Electron Device Letters. 35: 705-707. DOI: 10.1109/Led.2014.2323256 |
0.62 |
|
| 2014 |
Islam R, Shine G, Saraswat KC. Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts Applied Physics Letters. 105. DOI: 10.1063/1.4901193 |
0.415 |
|
| 2013 |
Gupta S, Chen R, Huang YC, Kim Y, Sanchez E, Harris JS, Saraswat KC. Highly selective dry etching of germanium over germanium-tin (Ge(1-x)Sn(x)): a novel route for Ge(1-x)Sn(x) nanostructure fabrication. Nano Letters. 13: 3783-90. PMID 23834495 DOI: 10.1021/Nl4017286 |
0.306 |
|
| 2013 |
Nam D, Sukhdeo DS, Kang JH, Petykiewicz J, Lee JH, Jung WS, Vučković J, Brongersma ML, Saraswat KC. Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles. Nano Letters. 13: 3118-23. PMID 23758608 DOI: 10.1021/Nl401042N |
0.363 |
|
| 2013 |
Pal A, Nainani A, Ye Z, Bao X, Sanchez E, Saraswat KC. Electrical characterization of GaP-silicon interface for memory and transistor applications Ieee Transactions On Electron Devices. 60: 2238-2245. DOI: 10.1109/Ted.2013.2264495 |
0.455 |
|
| 2013 |
Yuan Z, Kumar A, Chen CY, Nainani A, Bennett BR, Boos JB, Saraswat KC. Antimonide-based heterostructure p-channel MOSFETs with Ni-alloy source/drain Ieee Electron Device Letters. 34: 1367-1369. DOI: 10.1109/Led.2013.2280615 |
0.371 |
|
| 2013 |
Gupta S, Huang YC, Kim Y, Sanchez E, Saraswat KC. Hole mobility enhancement in compressively strained Ge0.93 Sn0.07 pMOSFETs Ieee Electron Device Letters. 34: 831-833. DOI: 10.1109/Led.2013.2259573 |
0.387 |
|
| 2013 |
Shim J, Song I, Jung WS, Nam J, Leem JW, Yu JS, Kim DE, Cho WJ, Kim YS, Jun DH, Heo J, Park W, Park JH, Saraswat KC. Effects of thermal annealing on in situ phosphorus-doped germanium n +p junction Ieee Electron Device Letters. 34: 15-17. DOI: 10.1109/Led.2012.2226016 |
0.356 |
|
| 2013 |
Dutt B, Lin H, Sukhdeo DS, Vulovic BM, Gupta S, Nam D, Saraswat KC, Harris JS. Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2241397 |
0.311 |
|
| 2013 |
Gupta S, Chen R, Harris JS, Saraswat KC. Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment Applied Physics Letters. 103. DOI: 10.1063/1.4850518 |
0.397 |
|
| 2013 |
Shim J, Shin J, Lee I, Choi D, Woo Baek J, Heo J, Park W, Woo Leem J, Su Yu J, Jung W, Saraswat K, Park J. Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability Journal of Applied Physics. 114: 094515. DOI: 10.1063/1.4820580 |
0.344 |
|
| 2013 |
Chen R, Huang YC, Gupta S, Lin AC, Sanchez E, Kim Y, Saraswat KC, Kamins TI, Harris JS. Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing Journal of Crystal Growth. 365: 29-34. DOI: 10.1016/J.Jcrysgro.2012.12.014 |
0.383 |
|
| 2013 |
Yu HY, Battal E, Okyay AK, Shim J, Park JH, Baek JW, Saraswat KC. Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers Current Applied Physics. 13: 1060-1063. DOI: 10.1016/J.Cap.2013.02.021 |
0.599 |
|
| 2012 |
Jason Lin JY, Roy AM, Saraswat KC. Reduction in specific contact resistivity to n + ge using TiO 2 interfacial layer Ieee Electron Device Letters. 33: 1541-1543. DOI: 10.1109/Led.2012.2214758 |
0.358 |
|
| 2012 |
Jung WS, Park JH, Lin JYJ, Wong S, Saraswat KC. Characterization of geometric leakage current of GeO2 isolation and effect of forming gas annealing in germanium p-n junctions Ieee Electron Device Letters. 33: 1520-1522. DOI: 10.1109/Led.2012.2211856 |
0.339 |
|
| 2012 |
Roy AM, Lin J, Saraswat KC. The effect of fixed charge in tunnel-barrier contacts for fermi-level depinning in Germanium Ieee Electron Device Letters. 33: 761-763. DOI: 10.1109/Led.2012.2191386 |
0.305 |
|
| 2012 |
Yu HY, Park JH, Okyay AK, Saraswat KC. Selective-area high-quality germanium growth for monolithic integrated optoelectronics Ieee Electron Device Letters. 33: 579-581. DOI: 10.1109/Led.2011.2181814 |
0.666 |
|
| 2012 |
Pal A, Nainani A, Gupta S, Saraswat KC. Performance improvement of one-transistor DRAM by band engineering Ieee Electron Device Letters. 33: 29-31. DOI: 10.1109/Led.2011.2171912 |
0.366 |
|
| 2012 |
Jung WS, Park JH, Jung HW, Saraswat KC. Characteristics of metal-induced crystallization/dopant activation and its application to junction diodes on single-crystalline silicon Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/24/245104 |
0.391 |
|
| 2012 |
Jung WS, Park JH, Nainani A, Nam D, Saraswat KC. Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application Applied Physics Letters. 101. DOI: 10.1063/1.4746389 |
0.406 |
|
| 2012 |
Nainani A, Bennett BR, Brad Boos J, Ancona MG, Saraswat KC. Enhancing hole mobility in III-V semiconductors Journal of Applied Physics. 111. DOI: 10.1063/1.4718381 |
0.32 |
|
| 2012 |
Yuan Z, Nainani A, Bennett BR, Brad Boos J, Ancona MG, Saraswat KC. Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 100. DOI: 10.1063/1.3699226 |
0.356 |
|
| 2012 |
Nam D, Sukhdeo D, Cheng SL, Roy A, Chih-Yao Huang K, Brongersma M, Nishi Y, Saraswat K. Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser Applied Physics Letters. 100. DOI: 10.1063/1.3699224 |
0.309 |
|
| 2011 |
Nam D, Sukhdeo D, Roy A, Balram K, Cheng SL, Huang KC, Yuan Z, Brongersma M, Nishi Y, Miller D, Saraswat K. Strained germanium thin film membrane on silicon substrate for optoelectronics. Optics Express. 19: 25866-72. PMID 22274174 DOI: 10.1364/Oe.19.025866 |
0.347 |
|
| 2011 |
Nainani A, Irisawa T, Yuan Z, Bennett BR, Boos JB, Nishi Y, Saraswat KC. Optimization of the Al2O3/GaSb interface and a high-mobility GaSb pMOSFET Ieee Transactions On Electron Devices. 58: 3407-3415. DOI: 10.1109/Ted.2011.2162732 |
0.423 |
|
| 2011 |
Park JH, Kuzum D, Yu HY, Saraswat KC. Optimization of germanium (Ge) n+/p and p+/n junction diodes and sub 380 °c Ge CMOS technology for monolithic three-dimensional integration Ieee Transactions On Electron Devices. 58: 2394-2400. DOI: 10.1109/Ted.2011.2148199 |
0.38 |
|
| 2011 |
Kuzum D, Park JH, Krishnamohan T, Wong HSP, Saraswat KC. The effect of donor/acceptor nature of interface traps on Ge MOSFET characteristics Ieee Transactions On Electron Devices. 58: 1015-1022. DOI: 10.1109/Ted.2011.2120613 |
0.689 |
|
| 2011 |
Kobayashi M, Mitard J, Irisawa T, Hoffmann T, Meuris M, Saraswat K, Nishi Y, Heyns M. On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs Ieee Transactions On Electron Devices. 58: 384-391. DOI: 10.1109/Ted.2010.2093530 |
0.379 |
|
| 2011 |
Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. High-mobility Ge N-MOSFETs and mobility degradation mechanisms Ieee Transactions On Electron Devices. 58: 59-66. DOI: 10.1109/Ted.2010.2088124 |
0.708 |
|
| 2011 |
Thareja G, Chopra S, Adams B, Kim Y, Moffatt S, Saraswat K, Nishi Y. High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode Ieee Electron Device Letters. 32: 838-840. DOI: 10.1109/Led.2011.2142410 |
0.312 |
|
| 2011 |
Thareja G, Cheng S, Kamins T, Saraswat K, Nishi Y. Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb Ieee Electron Device Letters. 32: 608-610. DOI: 10.1109/Led.2011.2119460 |
0.336 |
|
| 2011 |
Yu HY, Kobayashi M, Park JH, Nishi Y, Saraswat KC. Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration Ieee Electron Device Letters. 32: 446-448. DOI: 10.1109/Led.2011.2106756 |
0.405 |
|
| 2011 |
Park JH, Kuzum D, Jung WS, Saraswat KC. N-channel germanium MOSFET fabricated below 360°C by cobalt-induced dopant activation for monolithic three-dimensional-ICs Ieee Electron Device Letters. 32: 234-236. DOI: 10.1109/Led.2010.2095827 |
0.403 |
|
| 2011 |
Hu J, Nainani A, Sun Y, Saraswat KC, Philip Wong HS. Impact of fixed charge on metal-insulator-semiconductor barrier height reduction Applied Physics Letters. 99. DOI: 10.1063/1.3669414 |
0.347 |
|
| 2011 |
Hu J, Saraswat KC, Philip Wong HS. Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces Applied Physics Letters. 99. DOI: 10.1063/1.3633118 |
0.408 |
|
| 2011 |
Nainani A, Yuan Z, Krishnamohan T, Bennett BR, Boos JB, Reason M, Ancona MG, Nishi Y, Saraswat KC. InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design Journal of Applied Physics. 110. DOI: 10.1063/1.3600220 |
0.696 |
|
| 2011 |
Cheng S, Shambat G, Lu J, Yu H, Saraswat K, Kamins TI, Vuckovic J, Nishi Y. Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon Applied Physics Letters. 98: 211101. DOI: 10.1063/1.3592837 |
0.366 |
|
| 2011 |
Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett BR, Brad Boos J, Saraswat KC. Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning Journal of Applied Physics. 109. DOI: 10.1063/1.3590167 |
0.344 |
|
| 2011 |
Yuan Z, Nainani A, Sun Y, Lin JYJ, Pianetta P, Saraswat KC. Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance Applied Physics Letters. 98. DOI: 10.1063/1.3584862 |
0.35 |
|
| 2011 |
Lin JYJ, Roy AM, Nainani A, Sun Y, Saraswat KC. Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height Applied Physics Letters. 98. DOI: 10.1063/1.3562305 |
0.373 |
|
| 2011 |
Hu J, Saraswat KC, Wong HSP. Experimental demonstration of In0.53 Ga0.47 As field effect transistors with scalable nonalloyed source/drain contacts Applied Physics Letters. 98. DOI: 10.1063/1.3553192 |
0.384 |
|
| 2011 |
Kim EJ, Shandalov M, Saraswat KC, McIntyre PC. Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics Applied Physics Letters. 98. DOI: 10.1063/1.3527977 |
0.342 |
|
| 2011 |
Kuzum D, Park JH, Krishnamohan T, Saraswat KC. Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics Microelectronic Engineering. 88: 3428-3431. DOI: 10.1016/J.Mee.2010.04.011 |
0.695 |
|
| 2010 |
Raghunathan S, Krishnamohan T, Saraswat K. Novel SiGe source/drain for reduced parasitic resistance in Ge NMOS Ecs Transactions. 33: 871-876. DOI: 10.1149/1.3487617 |
0.607 |
|
| 2010 |
Tada M, Park J, Kuzum D, Thareja G, Jain JR, Nishi Y, Saraswat KC. Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3295703 |
0.441 |
|
| 2010 |
Kobayashi M, Irisawa T, Magyari-Kope B, Saraswat K, Wong HP, Nishi Y. Uniaxial Stress Engineering for High-Performance Ge NMOSFETs Ieee Transactions On Electron Devices. 57: 1037-1046. DOI: 10.1109/Ted.2010.2042767 |
0.416 |
|
| 2010 |
Ertosun MG, Saraswat KC. Investigation of Capacitorless Double-Gate Single-Transistor DRAM: With and Without Quantum Well Ieee Transactions On Electron Devices. 57: 608-613. DOI: 10.1109/Ted.2009.2038651 |
0.323 |
|
| 2010 |
Nainani A, Yuan Z, Krishnamohan T, Saraswat K. Optimal design of III-V heterostructure MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 103-106. DOI: 10.1109/SISPAD.2010.5604557 |
0.625 |
|
| 2010 |
Roy AM, Lin JYJ, Saraswat KC. Specific contact resistivity of tunnel barrier contacts used for fermi level depinning Ieee Electron Device Letters. 31: 1077-1079. DOI: 10.1109/Led.2010.2058838 |
0.32 |
|
| 2010 |
Nainani A, Irisawa T, Yuan Z, Sun Y, Krishnamohan T, Reason M, Bennett BR, Boos JB, Ancona MG, Nishi Y, Saraswat KC. Development of high-k dielectric for antimonides and a sub 350°C III-V pMOSFET outperforming Germanium Technical Digest - International Electron Devices Meeting, Iedm. 6.4.1-6.4.4. DOI: 10.1109/IEDM.2010.5703309 |
0.609 |
|
| 2010 |
Yu HY, Cheng SL, Park JH, Okyay AK, Onbal MC, Ercan B, Nishi Y, Saraswat KC. High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing Applied Physics Letters. 97. DOI: 10.1063/1.3478242 |
0.669 |
|
| 2010 |
Nainani A, Yum J, Barnett J, Hill R, Goel N, Huang J, Majhi P, Jammy R, Saraswat KC. Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments Applied Physics Letters. 96. DOI: 10.1063/1.3436561 |
0.349 |
|
| 2010 |
Hu J, Saraswat KC, Wong H-P. Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts Journal of Applied Physics. 107: 63712. DOI: 10.1063/1.3327434 |
0.377 |
|
| 2010 |
Lee D, Raghunathan S, Wilson RJ, Nikonov DE, Saraswat K, Wang SX. The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures Applied Physics Letters. 96. DOI: 10.1063/1.3285163 |
0.341 |
|
| 2010 |
Kim EJ, Wang L, Asbeck PM, Saraswat KC, McIntyre PC. Border traps in Al2 O3 / In0.53 Ga 0.47 As (100) gate stacks and their passivation by hydrogen anneals Applied Physics Letters. 96. DOI: 10.1063/1.3281027 |
0.352 |
|
| 2010 |
Kobayashi S, Nishi Y, Saraswat K. Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si Thin Solid Films. 518: S136-S139. DOI: 10.1016/J.Tsf.2009.10.072 |
0.376 |
|
| 2010 |
Krishnamohan T, Kim D, Saraswat KC. Properties and trade-offs of compound semiconductor MOSFETs Fundamentals of Iii-V Semiconductor Mosfets. 7-30. DOI: 10.1007/978-1-4419-1547-4_2 |
0.587 |
|
| 2009 |
Cheng SL, Lu J, Shambat G, Yu HY, Saraswat K, Vuckovic J, Nishi Y. Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate. Optics Express. 17: 10019-24. PMID 19506652 DOI: 10.1364/Oe.17.010019 |
0.403 |
|
| 2009 |
Nainani A, Kobayashi M, Witte D, Irisawa T, Krishnamohan T, Saraswat K, Bennett BR, Ancona MG, Boos JB. Investigation of Strained-Sb Hetrostructures with High Hole Mobility The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.J-2-6 |
0.634 |
|
| 2009 |
Tada M, Park J, Jain JR, Saraswat KC. Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon–Germanium Films Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3008009 |
0.338 |
|
| 2009 |
Koo K, Kapur P, Saraswat KC. Compact Performance Models and Comparisons for Gigascale On-Chip Global Interconnect Technologies Ieee Transactions On Electron Devices. 56: 1787-1798. DOI: 10.1109/Ted.2009.2026196 |
0.558 |
|
| 2009 |
Kuzum D, Pethe AJ, Krishnamohan T, Saraswat KC. Ge (100) and (111) N- and P-FETs with high mobility and low-T mobility characterization Ieee Transactions On Electron Devices. 56: 648-655. DOI: 10.1109/Ted.2009.2014198 |
0.8 |
|
| 2009 |
Yu HY, Ren S, Jung WS, Okyay AK, Miller DAB, Saraswat KC. High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration Ieee Electron Device Letters. 30: 1161-1163. DOI: 10.1109/Led.2009.2030905 |
0.601 |
|
| 2009 |
Yu HY, Cheng SL, Griffin PB, Nishi Y, Saraswat KC. Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode Ieee Electron Device Letters. 30: 1002-1004. DOI: 10.1109/Led.2009.2027823 |
0.366 |
|
| 2009 |
Yu H, Ishibashi M, Park J, Kobayashi M, Saraswat KC. p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si Ieee Electron Device Letters. 30: 675-677. DOI: 10.1109/Led.2009.2019847 |
0.437 |
|
| 2009 |
Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. Experimental demonstration of high mobility Ge NMOS Technical Digest - International Electron Devices Meeting, Iedm. 19.1.1-19.1.4. DOI: 10.1109/IEDM.2009.5424322 |
0.639 |
|
| 2009 |
Nainani A, Raghunathan S, Witte D, Kobayashi M, Irisawa T, Krishnamohan T, Saraswat K, Bennett BR, Ancona MG, Boos JB. Engineering of strained III-V heterostructures for high hole mobility Technical Digest - International Electron Devices Meeting, Iedm. 35.3.1-35.3.4. DOI: 10.1109/IEDM.2009.5424267 |
0.603 |
|
| 2009 |
Yu HY, Kobayashi M, Jung WS, Okyay AK, Nishi Y, Saraswat KC. High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration Technical Digest - International Electron Devices Meeting, Iedm. 29.4.1-29.4.4. DOI: 10.1109/IEDM.2009.5424245 |
0.608 |
|
| 2009 |
Raghunathan S, Krishnamohan T, Parat K, Saraswat K. Investigation of ballistic current in scaled floating-gate NAND FLASH and a solution Technical Digest - International Electron Devices Meeting, Iedm. 34.1.1-34.1.4. DOI: 10.1109/IEDM.2009.5424216 |
0.606 |
|
| 2009 |
Kuzum D, Martens K, Krishnamohan T, Saraswat KC. Characteristics of surface states and charge neutrality level in Ge Applied Physics Letters. 95. DOI: 10.1063/1.3270529 |
0.658 |
|
| 2009 |
Kim EJ, Chagarov E, Cagnon J, Yuan Y, Kummel AC, Asbeck PM, Stemmer S, Saraswat KC, McIntyre PC. Atomically abrupt and unpinned Al2O3/In 0.53Ga0.47 As interfaces: Experiment and simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3266006 |
0.388 |
|
| 2009 |
Kobayashi M, Thareja G, Ishibashi M, Sun Y, Griffin P, McVittie J, Pianetta P, Saraswat K, Nishi Y. Radical oxidation of germanium for interface gate dielectric GeO 2 formation in metal-insulator-semiconductor gate stack Journal of Applied Physics. 106. DOI: 10.1063/1.3259407 |
0.364 |
|
| 2009 |
Yu H, Kim D, Ren S, Kobayashi M, Miller DAB, Nishi Y, Saraswat KC. Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si Applied Physics Letters. 95: 161106. DOI: 10.1063/1.3254181 |
0.321 |
|
| 2009 |
Park J, Tada M, Jung W, Wong H-P, Saraswat KC. Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration Journal of Applied Physics. 106: 74510. DOI: 10.1063/1.3238297 |
0.367 |
|
| 2009 |
Kobayashi M, Kinoshita A, Saraswat K, Wong H-P, Nishi Y. Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application Journal of Applied Physics. 105: 23702. DOI: 10.1063/1.3065990 |
0.366 |
|
| 2009 |
McIntyre PC, Oshima Y, Kim E, Saraswat KC. Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper) Microelectronic Engineering. 86: 1536-1539. DOI: 10.1016/J.Mee.2009.03.081 |
0.398 |
|
| 2008 |
Saraswat KC, Kim D, Krishnamohan T, Kuzum D, Okyay AK, Pethe A, Yu HY. Germanium for high performance MOSFETs and optical interconnects Ecs Transactions. 16: 3-12. DOI: 10.1149/1.2986748 |
0.828 |
|
| 2008 |
Delabie A, Brunco DP, Conard T, Favia P, Bender H, Franquet A, Sioncke S, Vandervorst W, Van Elshocht S, Heyns M, Meuris M, Kim E, McIntyre PC, Saraswat KC, Lebeau JM, et al. Atomic layer deposition of hafnium oxide on ge and gaas substrates: Precursors and surface preparation Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2979144 |
0.395 |
|
| 2008 |
Behnam A, Johnson JL, Choi Y, Ertosun MG, Wu Z, Rinzler AG, Kapur P, Saraswat KC, Ural A. Metal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon schottky contacts Proceedings of Spie - the International Society For Optical Engineering. 6885. DOI: 10.1117/12.761935 |
0.3 |
|
| 2008 |
Martens K, Chui CO, Brammertz G, De Jaeger B, Kuzum D, Meuris M, Heyns MM, Krishnamohan T, Saraswat K, Maes HE, Groeseneken G. On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates Ieee Transactions On Electron Devices. 55: 547-556. DOI: 10.1109/Ted.2007.912365 |
0.779 |
|
| 2008 |
Ertosun MG, Cho H, Kapur P, Saraswat KC. A Nanoscale Vertical Double-Gate Single-Transistor Capacitorless DRAM Ieee Electron Device Letters. 29: 615-617. DOI: 10.1109/Led.2008.922969 |
0.763 |
|
| 2008 |
Kuzum D, Krishnamohan T, Pethe AJ, Okyay AK, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Ge-interface engineering with ozone oxidation for low interface-state density Ieee Electron Device Letters. 29: 328-330. DOI: 10.1109/Led.2008.918272 |
0.799 |
|
| 2008 |
Ertosun MG, Kapur P, Saraswat KC. A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM: 1T-QW DRAM Ieee Electron Device Letters. 29: 1405-1407. DOI: 10.1109/Led.2008.2007508 |
0.557 |
|
| 2008 |
Verma S, Pop E, Kapur P, Parat K, Saraswat KC. Operational Voltage Reduction of Flash Memory Using High-$\kappa$ Composite Tunnel Barriers Ieee Electron Device Letters. 29: 252-254. DOI: 10.1109/Led.2007.915376 |
0.552 |
|
| 2008 |
Cho H, Koo K, Kapur P, Saraswat KC. Performance Comparisons Between Cu/Low- $\kappa$ , Carbon-Nanotube, and Optics for Future On-Chip Interconnects Ieee Electron Device Letters. 29: 122-124. DOI: 10.1109/Led.2007.911617 |
0.612 |
|
| 2008 |
Park J, Kuzum D, Tada M, Saraswat KC. High performance germanium N+∕P and P+∕N junction diodes formed at low Temperature (⩽380°C) using metal-induced dopant activation Applied Physics Letters. 93: 193507. DOI: 10.1063/1.3025849 |
0.42 |
|
| 2008 |
Park J, Tada M, Kapur P, Saraswat KC. Low temperature boron and phosphorus activation in amorphous germanium using Ni- and Co-induced crystallization and its application for three-dimensional integrated circuits Applied Physics Letters. 93: 183512. DOI: 10.1063/1.3009201 |
0.608 |
|
| 2008 |
Park J, Tada M, Kapur P, Peng H, Saraswat KC. Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate Journal of Applied Physics. 104: 64501. DOI: 10.1063/1.2978367 |
0.609 |
|
| 2008 |
Behnam A, Johnson JL, Choi Y, Ertosun MG, Okyay AK, Kapur P, Saraswat KC, Ural A. Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures Applied Physics Letters. 92. DOI: 10.1063/1.2945644 |
0.735 |
|
| 2008 |
Behnam A, Johnson J, Choi Y, Noriega L, Ertosun MG, Wu Z, Rinzler AG, Kapur P, Saraswat KC, Ural A. Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts Journal of Applied Physics. 103. DOI: 10.1063/1.2938037 |
0.613 |
|
| 2008 |
Tang L, Kocabas SE, Latif S, Okyay AK, Ly-Gagnon DS, Saraswat KC, Miller DAB. Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna Nature Photonics. 2: 226-229. DOI: 10.1038/Nphoton.2008.30 |
0.567 |
|
| 2007 |
Okyay AK, Pethe AJ, Kuzum D, Latif S, Miller DA, Saraswat KC. SiGe optoelectronic metal-oxide semiconductor field-effect transistor. Optics Letters. 32: 2022-4. PMID 17632630 DOI: 10.1364/Ol.32.002022 |
0.793 |
|
| 2007 |
Johnson JL, Behnam A, Choi Y, Noriega L, Ertosun G, Wu Z, Rinzler AG, Kapur P, Saraswat KC, Ural A. Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts Mrs Proceedings. 1057. DOI: 10.1557/Proc-1057-Ii22-05 |
0.562 |
|
| 2007 |
Fidaner O, Okyay AK, Roth JE, Kuo Y, Saraswat KC, Harris JS, Miller DAB. Waveguide Electroabsorption Modulator on Si Employing Ge/SiGe Quantum Wells Frontiers in Optics. DOI: 10.1364/Fio.2007.Fmc2 |
0.599 |
|
| 2007 |
Saraswat KC, Kim D, Krishnamohan T, Pethe A. Performance limitations of Si bulk CMOS and alternatives for future ULSI Ecs Transactions. 8: 9-14. DOI: 10.1149/1.2767279 |
0.805 |
|
| 2007 |
Koo K, Cho H, Kapur P, Saraswat KC. Performance Comparisons Between Carbon Nanotubes, Optical, and Cu for Future High-Performance On-Chip Interconnect Applications Ieee Transactions On Electron Devices. 54: 3206-3215. DOI: 10.1109/Ted.2007.909045 |
0.627 |
|
| 2007 |
Okyay AK, Kuzum D, Latif S, Miller DAB, Saraswat KC. Silicon germanium CMOS optoelectronic switching device: Bringing light to latch Ieee Transactions On Electron Devices. 54: 3252-3259. DOI: 10.1109/Ted.2007.908903 |
0.667 |
|
| 2007 |
Kuo-An Chao A, Kapur P, Morifuji E, Saraswat K, Nishi Y. Electro-Thermally Coupled Power Optimization for Future Transistors and Its Applications Ieee Transactions On Electron Devices. 54: 1696-1704. DOI: 10.1109/Ted.2007.898242 |
0.591 |
|
| 2007 |
Fidaner O, Okyay AK, Roth JE, Schaevitz RK, Kuo YH, Saraswat KC, Harris JS, Miller DAB. Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared Ieee Photonics Technology Letters. 19: 1631-1633. DOI: 10.1109/Lpt.2007.904929 |
0.628 |
|
| 2007 |
Cho H, Kapur P, Saraswat KC. A Modulator Design Methodology Minimizing Power Dissipation in a Quantum Well Modulator-Based Optical Interconnect Journal of Lightwave Technology. 25: 1621-1628. DOI: 10.1109/Jlt.2007.895340 |
0.655 |
|
| 2007 |
Park J, Kapur P, Saraswat KC, Peng H. A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits Applied Physics Letters. 91: 143107. DOI: 10.1063/1.2793183 |
0.622 |
|
| 2007 |
Sreenivasan R, Sugawara T, Saraswat KC, McIntyre PC. High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications Applied Physics Letters. 90: 102101. DOI: 10.1063/1.2643085 |
0.339 |
|
| 2007 |
Krishnamohan T, Jungemann C, Kim D, Ungersboeck E, Selberherr S, Pham AT, Meinerzhagen B, Wong P, Nishi Y, Saraswat KC. High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs Microelectronic Engineering. 84: 2063-2066. DOI: 10.1016/J.Mee.2007.04.085 |
0.686 |
|
| 2006 |
Okyay AK, Nayfeh AM, Saraswat KC, Yonehara T, Marshall A, McIntyre PC. High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si. Optics Letters. 31: 2565-7. PMID 16902620 DOI: 10.1364/Ol.31.002565 |
0.731 |
|
| 2006 |
Tang L, Miller DA, Okyay AK, Matteo JA, Yuen Y, Saraswat KC, Hesselink L. C-shaped nanoaperture-enhanced germanium photodetector. Optics Letters. 31: 1519-21. PMID 16642158 DOI: 10.1364/Nano.2006.Nthb5 |
0.558 |
|
| 2006 |
Krishnamohan T, Kim D, Jungemann C, Nishi Y, Saraswat KC. Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs The Japan Society of Applied Physics. 2006: 168-169. DOI: 10.7567/Ssdm.2006.H-1-5 |
0.642 |
|
| 2006 |
Krishnamohan T, Kim D, Jungemann C, Nishi Y, Saraswat K. High performance, ultra-thin, strained-Ge, heterostructure FETs with high mobility and low leakage Ecs Transactions. 3: 687-695. DOI: 10.1149/1.2355864 |
0.675 |
|
| 2006 |
McIntyre PC, Chi D, Chui CO, Kim H, Seo KI, Saraswat KC, Sreenivasan R, Sugawara T, Aguirre-Testado FS, Wallace RM. Interface layers for high-k/Ge gate stacks: Are they necessary? Ecs Transactions. 3: 519-530. DOI: 10.1149/1.2355849 |
0.611 |
|
| 2006 |
Saraswat KC, Chui CO, Kapur P, Krishnamohan T, Nayfeh A, Okyay AK, Shenoy RS. Performance limitations of Si CMOS and alternatives for nanoelectronics International Journal of High Speed Electronics and Systems. 16: 175-192. DOI: 10.1142/S0129156406003606 |
0.818 |
|
| 2006 |
Cho H, Kapur P, Kalavade P, Saraswat KC. A novel spacer process for sub-10-nm-thick vertical MOS and its integration with planar MOS device Ieee Transactions On Nanotechnology. 5: 554-563. DOI: 10.1109/Tnano.2006.880881 |
0.808 |
|
| 2006 |
Chui CO, Kim H, Chi D, Mcintyre PC, Saraswat KC. Nanoscale germanium MOS dielectrics - Part II: High-κ gate dielectrics Ieee Transactions On Electron Devices. 53: 1509-1516. DOI: 10.1109/Ted.2006.875812 |
0.743 |
|
| 2006 |
Chui CO, Ito F, Saraswat KC. Nanoscale germanium MOS dielectrics - Part I: Germanium oxynitrides Ieee Transactions On Electron Devices. 53: 1501-1508. DOI: 10.1109/Ted.2006.875808 |
0.678 |
|
| 2006 |
Krishnamohan T, Kim D, Nguyen CD, Jungemann C, Nishi Y, Saraswat KC. High-mobility low band-to-band-tunneling strained-germanium double-gate heterostructure FETs: Simulations Ieee Transactions On Electron Devices. 53: 1000-1009. DOI: 10.1109/Ted.2006.872367 |
0.699 |
|
| 2006 |
Krishnamohan T, Krivokapic Z, Uchida K, Nishi Y, Saraswat KC. High-mobility ultrathin strained Ge MOSFETs on Bulk and SOI with low band-to-band tunneling leakage: Experiments Ieee Transactions On Electron Devices. 53: 990-999. DOI: 10.1109/Ted.2006.872362 |
0.708 |
|
| 2006 |
Cho H, Kapur P, Saraswat KC. Performance comparison between vertical-cavity surface-emitting laser and quantum-well modulator for short-distance optical links Ieee Photonics Technology Letters. 18: 520-522. DOI: 10.1109/Lpt.2005.863986 |
0.62 |
|
| 2006 |
Seo K, Sreenivasan R, McIntyre PC, Saraswat KC. Improvement in High- $k$ $(hboxHfO_2/hboxSiO_2)$ Reliability by Incorporation of Fluorine Ieee Electron Device Letters. 27: 821-823. DOI: 10.1109/Led.2006.882564 |
0.509 |
|
| 2006 |
Seo KI, Lee DI, Pianetta P, Kim H, Saraswat KC, McIntyre PC. Chemical states and electrical properties of a high- k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer Applied Physics Letters. 89. DOI: 10.1063/1.2358834 |
0.639 |
|
| 2006 |
Sreenivasan R, McIntyre PC, Kim H, Saraswat KC. Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition Applied Physics Letters. 89: 112903. DOI: 10.1063/1.2348735 |
0.566 |
|
| 2006 |
Okyay AK, Chui CO, Saraswat KC. Leakage suppression by asymmetric area electrodes in metal-semiconductor- metal photodetectors Applied Physics Letters. 88. DOI: 10.1063/1.2171648 |
0.717 |
|
| 2006 |
Saraswat K, Chui CO, Krishnamohan T, Kim D, Nayfeh A, Pethe A. High performance germanium MOSFETs Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 135: 242-249. DOI: 10.1016/J.Mseb.2006.08.014 |
0.827 |
|
| 2005 |
Kim H, Saraswat KC, McIntyre PC. Comparative Study on Electrical and Microstructural Characteristics of ZrO2 and HfO2 Grown by Atomic Layer Deposition Journal of Materials Research. 20: 3125-3132. DOI: 10.1557/Jmr.2005.0394 |
0.576 |
|
| 2005 |
Kapur P, Kekatpure RD, Saraswat KC. Minimizing power dissipation in optical interconnects at low voltage using optimal modulator design Ieee Transactions On Electron Devices. 52: 1713-1721. DOI: 10.1109/Ted.2005.851821 |
0.546 |
|
| 2005 |
Nayfeh A, Chui CO, Yonehara T, Saraswat KC. Fabrication of high-quality p-MOSFET in Ge Grown heteroepitaxially on Si Ieee Electron Device Letters. 26: 311-313. DOI: 10.1109/Led.2005.846578 |
0.757 |
|
| 2005 |
Chui CO, Kulig L, Moran J, Tsai W, Saraswat KC. Germanium n -type shallow junction activation dependences Applied Physics Letters. 87. DOI: 10.1063/1.2037861 |
0.621 |
|
| 2005 |
Seo KI, McIntyre PC, Sun S, Lee DI, Pianetta P, Saraswat KC. Chemical states and electronic structure of a HfO 2/Ge(001) interface Applied Physics Letters. 87. DOI: 10.1063/1.2006211 |
0.472 |
|
| 2005 |
Chui CO, Lee DI, Singh AA, Pianetta PA, Saraswat KC. Zirconia-germanium interface photoemission spectroscopy using synchrotron radiation Journal of Applied Physics. 97. DOI: 10.1063/1.1922090 |
0.654 |
|
| 2005 |
Seo K, McIntyre PC, Kim H, Saraswat KC. Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing Applied Physics Letters. 86: 082904. DOI: 10.1063/1.1866644 |
0.657 |
|
| 2005 |
Saraswat KC, Chui CO, Krishnamohan T, Nayfeh A, McIntyre P. Ge based high performance nanoscale MOSFETs Microelectronic Engineering. 80: 15-21. DOI: 10.1016/J.Mee.2005.04.038 |
0.827 |
|
| 2004 |
Saraswat KC, Chui CO, Krishnamohan T, Okyay AK, Kim H, McIntyre P. Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects The Japan Society of Applied Physics. 2004: 718-719. DOI: 10.7567/Ssdm.2004.A-8-1 |
0.781 |
|
| 2004 |
Kim H, McIntyre PC, Saraswat KC. Microstructural evolution of ZrO2–HfO2 nanolaminate structures grown by atomic layer deposition Journal of Materials Research. 19: 643-650. DOI: 10.1557/Jmr.2004.19.2.643 |
0.545 |
|
| 2004 |
Bakir MS, Chui CO, Okyay AK, Saraswat KC, Meindl JD. Integration of optical polymer pillars chip I/O interconnections with Si MSM photodetectors Ieee Transactions On Electron Devices. 51: 1084-1090. DOI: 10.1109/Ted.2004.830643 |
0.786 |
|
| 2004 |
Chui CO, Ito F, Saraswat KC. Scalability and electrical properties of germanium oxynitride MOS dielectrics Ieee Electron Device Letters. 25: 613-615. DOI: 10.1109/Led.2004.833830 |
0.668 |
|
| 2004 |
Chui CO, Kim H, McIntyre PC, Saraswat KC. Atomic layer deposition of high-κ dielectric for germanium MOS applications - substrate surface preparation Ieee Electron Device Letters. 25: 274-276. DOI: 10.1109/Led.2004.827285 |
0.733 |
|
| 2004 |
Cho H, Kapur P, Saraswat KC. Power comparison between high-speed electrical and optical interconnects for interchip communication Journal of Lightwave Technology. 22: 2021-2033. DOI: 10.1109/Jlt.2004.833531 |
0.635 |
|
| 2004 |
Nayfeh A, Chui CO, Saraswat KC, Yonehara T. Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality Proceedings - Electrochemical Society. 7: 1189-1192. DOI: 10.1063/1.1802381 |
0.74 |
|
| 2004 |
Kim H, McIntyre PC, Chui CO, Saraswat KC, Cho MH. Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition Applied Physics Letters. 85: 2902-2904. DOI: 10.1063/1.1797564 |
0.723 |
|
| 2004 |
Kim H, McIntyre PC, Chui CO, Saraswat KC, Stemmer S. Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer Journal of Applied Physics. 96: 3467-3472. DOI: 10.1063/1.1776636 |
0.713 |
|
| 2004 |
Chi D, Chui CO, Saraswat KC, Triplett BB, Mclntyre PC. Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates Journal of Applied Physics. 96: 813-819. DOI: 10.1063/1.1745118 |
0.637 |
|
| 2004 |
Kim H, Marshall A, McIntyre PC, Saraswat KC. Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies Applied Physics Letters. 84: 2064-2066. DOI: 10.1063/1.1667621 |
0.579 |
|
| 2003 |
Joshi AR, Saraswat KC. High performance submicrometer CMOS with metal induced lateral crystallization of amorphous silicon Journal of the Electrochemical Society. 150: G443-G449. DOI: 10.1149/1.1586302 |
0.673 |
|
| 2003 |
Shenoy RS, Saraswat KC. Optimization of extrinsic source/drain resistance in ultrathin body double-gate FETs Ieee Transactions On Nanotechnology. 2: 265-270. DOI: 10.1109/TNANO.2003.820780 |
0.667 |
|
| 2003 |
Joshi AR, Saraswat KC. Nickel induced crystallization of α-Si gate electrode at 500 °C and MOS capacitor reliability Ieee Transactions On Electron Devices. 50: 1058-1062. DOI: 10.1109/Ted.2003.812496 |
0.6 |
|
| 2003 |
Chui CO, Okyay AK, Saraswat KC. Effective dark current suppression with asymmetric MSM photodetectors in group IV semiconductors Ieee Photonics Technology Letters. 15: 1585-1587. DOI: 10.1109/Lpt.2003.818683 |
0.709 |
|
| 2003 |
Chui CO, Kim H, McVittie JP, Triplett BB, McIntyre PC, Saraswat KC. A novel self-aligned gate-last MOSFET process comparing high-κ candidates 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 464-465. DOI: 10.1109/ISDRS.2003.1272191 |
0.684 |
|
| 2003 |
Chui CO, Gopalakrishnan K, Griffin PB, Plummer JD, Saraswat KC. Activation and diffusion studies of ion-implanted p and n dopants in germanium Applied Physics Letters. 83: 3275-3277. DOI: 10.1063/1.1618382 |
0.67 |
|
| 2003 |
Kim H, Chui CO, Saraswat KC, McIntyre PC. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy Applied Physics Letters. 83: 2647-2649. DOI: 10.1063/1.1613031 |
0.717 |
|
| 2003 |
Wang D, Wang Q, Javey A, Tu R, Dai H, Kim H, McIntyre PC, Krishnamohan T, Saraswat KC. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics Applied Physics Letters. 83: 2432-2434. DOI: 10.1063/1.1611644 |
0.764 |
|
| 2003 |
Lee S, Kim H, McIntyre PC, Saraswat KC, Byun J. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application Applied Physics Letters. 82: 2874-2876. DOI: 10.1063/1.1569985 |
0.58 |
|
| 2003 |
Kim H, McIntyre PC, Saraswat KC. Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition Applied Physics Letters. 82: 106-108. DOI: 10.1063/1.1533117 |
0.581 |
|
| 2003 |
Joshi AR, Krishnamohan T, Saraswat KC. A model for crystal growth during metal induced lateral crystallization of amorphous silicon Journal of Applied Physics. 93: 175-181. DOI: 10.1063/1.1526937 |
0.726 |
|
| 2003 |
Kapur P, Saraswat KC. Optical interconnects for future high performance integrated circuits Physica E: Low-Dimensional Systems and Nanostructures. 16: 620-627. DOI: 10.1016/S1386-9477(02)00686-0 |
0.573 |
|
| 2002 |
Chui CO, Ramanathan S, Triplett BB, McIntyre PC, Saraswat KC. Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric Ieee Electron Device Letters. 23: 473-475. DOI: 10.1109/Led.2002.801319 |
0.672 |
|
| 2002 |
Shieh BP, Deal MD, Saraswat KC, Choudhury R, Park CW, Sukharev V, Loh W, Wright P. Electromigration reliability of low capacitance air-gap interconnect structures Proceedings of the Ieee 2002 International Interconnect Technology Conference, Iitc 2002. 203-205. DOI: 10.1109/IITC.2002.1014934 |
0.777 |
|
| 2002 |
Kapur P, Chandra G, McVittie JP, Saraswat KC. Technology and reliability constrained future copper interconnects - Part II: Performance implications Ieee Transactions On Electron Devices. 49: 598-604. DOI: 10.1109/16.992868 |
0.544 |
|
| 2002 |
Kapur P, McVittie JP, Saraswat KC. Technology and reliability constrained future copper interconnects - Part I: Resistance modeling Ieee Transactions On Electron Devices. 49: 590-597. DOI: 10.1109/16.992867 |
0.552 |
|
| 2002 |
Liu Y, Deal MD, Saraswat KC, Plummer JD. Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si Applied Physics Letters. 81: 4634-4636. DOI: 10.1063/1.1527977 |
0.613 |
|
| 2002 |
Perkins CM, Triplett BB, McIntyre PC, Saraswat KC, Shero E. Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics Applied Physics Letters. 81: 1417-1419. DOI: 10.1063/1.1499513 |
0.396 |
|
| 2001 |
Abdollahi-Alibeik S, Zheng J, McVittie JP, Saraswat KC, Gabriel CT, Abraham SC. Modeling and simulation of feature-size-dependent etching of metal stacks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 179-185. DOI: 10.1116/1.1340664 |
0.786 |
|
| 2001 |
Banerjee K, Souri SJ, Kapur P, Saraswat KC. 3-D ICs: A novel chip design for improving deep-submieroraeter interconnect performance and systems-on-chip integration and systems-on-chlp integration Proceedings of the Ieee. 89: 602-632. DOI: 10.1109/5.929647 |
0.771 |
|
| 2001 |
Davis JA, Venkatesan R, Kaloyeros A, Beylansky M, Souri SJ, Banerjee K, Saraswat KC, Rahman A, Reif R, Meindl JD. Interconnect limits on gigascale integration (GSI) in the 21st century Proceedings of the Ieee. 89: 305-322. DOI: 10.1109/5.915376 |
0.798 |
|
| 2001 |
Perkins CM, Triplett BB, McIntyre PC, Saraswat KC, Haukka S, Tuominen M. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition Applied Physics Letters. 78: 2357-2359. DOI: 10.1063/1.1362331 |
0.414 |
|
| 2001 |
Sukharev V, Shieh BP, Choudhury R, Park C, Saraswat KC. Reliability studies on multilevel interconnection with intermetal dielectric air gaps Microelectronics Reliability. 41: 1631-1635. DOI: 10.1016/S0026-2714(01)00153-6 |
0.772 |
|
| 2000 |
Toita M, Kalavade P, Saraswat KC. Control of Amorphous Silicon Crystallization Using Germanium Deposited by Low Pressure Chemical Vapor Deposition Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A9.5 |
0.775 |
|
| 2000 |
Wang AW, Saraswat KC. A strategy for modeling of variations due to grain size in poly crystalline thin-film transistors Ieee Transactions On Electron Devices. 47: 1035-1043. DOI: 10.1109/16.841238 |
0.31 |
|
| 1999 |
Park H, Ko D, Apte P, Helms CR, Saraswat KC. In Situ Removal of Native Oxides from Silicon Surfaces Using Anhydrous Hydrogen Fluoride Gas Electrochemical and Solid State Letters. 1: 77-79. DOI: 10.1149/1.1390642 |
0.304 |
|
| 1999 |
Abdollahi-Alibeik S, McVittie JP, Saraswat KC, Sukharev V, Schoenborn P. Analytical modeling of silicon etch process in high density plasma Journal of Vacuum Science and Technology. 17: 2485-2491. DOI: 10.1116/1.581986 |
0.782 |
|
| 1999 |
Subramanian V, Toita M, Ibrahim NR, Souri SJ, Saraswat KC. Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFT's for vertical integration applications Ieee Electron Device Letters. 20: 341-343. DOI: 10.1109/55.772370 |
0.803 |
|
| 1999 |
Yang T, Sachdev P, Saraswat KC. Dependence of Fermi level positions at gate and substrate on the reliability of ultrathin MOS gate oxides Ieee Transactions On Electron Devices. 46: 1457-1463. DOI: 10.1109/16.772491 |
0.387 |
|
| 1999 |
Smeys P, Griffin P, Rek Z, De Wolf I, Saraswat K. Influence of process-induced stress on device characteristics and its impact on scaled device performance Ieee Transactions On Electron Devices. 46: 1245-1252. DOI: 10.1109/16.766893 |
0.314 |
|
| 1999 |
Bhat N, Wang AW, Saraswat KC. Rapid thermal anneal of gate oxides for low thermal budget TFT's Ieee Transactions On Electron Devices. 46: 63-69. DOI: 10.1109/16.737442 |
0.362 |
|
| 1998 |
Wang AW, Saraswat KC. Evidence For Heterojunction Effects in Polycrystalline Si 1- x Ge x Thin Film Transistors With Si Caps Mrs Proceedings. 533: 145. DOI: 10.1557/Proc-533-145 |
0.36 |
|
| 1998 |
Sharangpani R, Das J, Tay SP, Thakur RPS, Yang TC, Saraswat KC. Growth And Characterization of Thin Wet Oxides Grown by Rapid Thermal Processing Mrs Proceedings. 525. DOI: 10.1557/Proc-525-143 |
0.357 |
|
| 1998 |
Wang AW, Saraswat KC. Passivation of Poly-Si Thin-Film Transistors With Ion-Implanted Deuterium Mrs Proceedings. 508: 85. DOI: 10.1557/Proc-508-85 |
0.364 |
|
| 1998 |
Kapur P, Bang DS, McVittie JP, Saraswat KC, Mountsier T. Method for angular sputter yield extraction for high-density plasma chemical vapor deposition simulators Journal of Vacuum Science & Technology B. 16: 1123-1128. DOI: 10.1116/1.590020 |
0.588 |
|
| 1998 |
Shieh B, Saraswat KC, McVittie JP, List S, Nag S, Islamraja M, Havemann RH. Air-gap formation during IMD deposition to lower interconnect capacitance Ieee Electron Device Letters. 19: 16-18. DOI: 10.1109/55.650339 |
0.344 |
|
| 1998 |
Subramanian V, Saraswat K. High-performance germanium-seeded laterally crystallized TFTs for vertical device integration Ieee Transactions On Electron Devices. 45: 1934-1939. DOI: 10.1109/16.711358 |
0.425 |
|
| 1998 |
Subramanian V, Saraswat K. Optimization of silicon-germanium TFT's through the control of amorphous precursor characteristics Ieee Transactions On Electron Devices. 45: 1690-1695. DOI: 10.1109/16.704366 |
0.39 |
|
| 1998 |
Bhat N, Saraswat KC. Characterization of border trap generation in rapid thermally annealed oxides deposited using silane chemistry Journal of Applied Physics. 84: 2722-2726. DOI: 10.1063/1.368384 |
0.354 |
|
| 1997 |
Tomita S, Jurichich S, Saraswat KC. Transistor sizing for AMLCD integrated TFT drive circuits Journal of the Society For Information Display. 5: 399-404. DOI: 10.1889/1.1985187 |
0.782 |
|
| 1997 |
Saraswat KC, Subramanian V, Jurichich S. A Low Temperature Polycrystalline Si TFT Technology for Large area AMLCD Drivers Mrs Proceedings. 472. DOI: 10.1557/Proc-472-439 |
0.826 |
|
| 1997 |
Jurichich S, Wood SC, Saraswat KC. Cost modeling of low-temperature large-area polysilicon thin film transistor liquid crystal display manufacturing Proceedings of Spie - the International Society For Optical Engineering. 3014: 160-165. DOI: 10.1117/12.270291 |
0.806 |
|
| 1997 |
Wang AW, Saraswat KC. Effect of a silicon interlayer in low-temperature poly-SiGe thin film transistors Proceedings of Spie - the International Society For Optical Engineering. 3014: 133-140. DOI: 10.1117/12.270288 |
0.489 |
|
| 1997 |
Subramanian V, Saraswat KC, Hovagimian H, Mehlhaff JC. Response surface optimization for high-performance solid-phase crystallized silicon-germanium thin film transistors Electronic Imaging. 3014: 127-132. DOI: 10.1117/12.270286 |
0.403 |
|
| 1997 |
Subramanian V, Dankoski P, Degertekin L, Khuri-Yakub BT, Saraswat KC. Controlled two-step solid-phase crystallization for high-performance polysilicon TFT's Ieee Electron Device Letters. 18: 378-381. DOI: 10.1109/55.605445 |
0.362 |
|
| 1996 |
Bhat N, Wang A, Saraswat KC. Effect of annealing ambient on performance and reliability of low pressure chemical vapor deposited oxides for thin film transistors Mrs Proceedings. 424. DOI: 10.1557/Proc-424-287 |
0.341 |
|
| 1996 |
Wang AW, Bhat N, Saraswat KC. TMCTS for gate dielectric in thin film transistors Mrs Proceedings. 424: 281. DOI: 10.1557/Proc-424-281 |
0.403 |
|
| 1996 |
Subramanian V, Degertekin FL, Dankoski P, Khuri-Yakub BT, Saraswat KC. A novel technique for in-situ monitoring of crystallinity and temperature during rapid thermal annealing of thin Si/Si-Ge films on quartz/glass Mrs Proceedings. 424. DOI: 10.1557/Proc-424-267 |
0.595 |
|
| 1996 |
Lee YJ, Khuri-Yakub BT, Saraswat KC. Acoustic temperature and film thickness monitor and method The Journal of the Acoustical Society of America. 99: 2640. DOI: 10.1121/1.414849 |
0.551 |
|
| 1996 |
Khuri-Yakub BT, Pei J, Degertekin FL, Saraswat KC. In-situ simultaneous measurement of temperature and thin film thickness with ultrasonic techniques Proceedings of Spie - the International Society For Optical Engineering. 2948: 131-135. DOI: 10.1117/12.259190 |
0.521 |
|
| 1996 |
Jurichich S, Wood SC, Saraswat KC. Manufacturing cost of active-matrix liquid-crystal displays as a function of plant capacity Ieee Transactions On Semiconductor Manufacturing. 9: 562-572. DOI: 10.1109/66.542171 |
0.752 |
|
| 1996 |
Lee YJ, Khuri-Yakub BT, Saraswat K. Temperature measurement in rapid thermal processing using the acoustic temperature sensor Ieee Transactions On Semiconductor Manufacturing. 9: 115-121. DOI: 10.1109/66.484291 |
0.302 |
|
| 1996 |
Cao M, Talwar S, Kramer KJ, Sigmon TW, Saraswat KC. A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films Ieee Transactions On Electron Devices. 43: 561-567. DOI: 10.1109/16.485538 |
0.356 |
|
| 1996 |
Bhat N, Apte P, Saraswat K. Charge trap generation in LPCVD oxides under high field stressing Ieee Transactions On Electron Devices. 43: 554-560. DOI: 10.1109/16.485537 |
0.334 |
|
| 1995 |
Cao M, Wang A, Saraswat KC. Low pressure chemical vapor deposition of Si{sub 1{minus}x}Ge{sub x} films on SiO{sub 2}: Characterization and modeling Journal of the Electrochemical Society. 142. DOI: 10.1149/1.2048614 |
0.375 |
|
| 1995 |
Cao M, Zhao T, Saraswat KC, Plummer JD. Study on Hydrogenation of Polysilicon Thin Film Transistors by Ion Implantation Ieee Transactions On Electron Devices. 42: 1134-1140. DOI: 10.1109/16.387248 |
0.586 |
|
| 1995 |
Smeys PIL, Griffin PB, Saraswat KC. Material properties of low pressure chemical vapor deposited silicon nitride for modeling and calibrating the simulation of advanced isolation structures Journal of Applied Physics. 78: 2837-2842. DOI: 10.1063/1.360084 |
0.329 |
|
| 1995 |
Pei J, Degertekin FL, Khuri‐Yakub BT, Saraswat KC. In situ thin film thickness measurement with acoustic Lamb waves Applied Physics Letters. 66: 2177-2179. DOI: 10.1063/1.113938 |
0.311 |
|
| 1995 |
Bang DS, Cao M, Wang A, Saraswat KC, King T. Resistivity of boron and phosphorus doped polycrystalline Si1−xGex films Applied Physics Letters. 66: 195-197. DOI: 10.1063/1.113132 |
0.354 |
|
| 1994 |
Jurichich S, King TJ, Saraswat K, Mehlhaff J. Low thermal budget polycrystalline silicon-germanium thin-film transistors fabricated by rapid thermal annealing Japanese Journal of Applied Physics. 33: L1139-L1141. DOI: 10.1143/Jjap.33.L1139 |
0.816 |
|
| 1994 |
Schaper C, Moslehi M, Saraswat K, Kailath T. Control of MMST RTP: Repeatability, Uniformity, and Integration for Flexible Manufacturing Ieee Transactions On Semiconductor Manufacturing. 7: 202-219. DOI: 10.1109/66.286856 |
0.317 |
|
| 1994 |
Saraswat KC, Apte PP, Booth L, Chen Y, Dankoski PCP, Degertekin FL, Franklin GF, Khuri-Yakub BT, Moslehi MM, Schaper C, Gyugyi PJ, Lee YJ, Pei J, Wood SC. Rapid Thermal Multiprocessing for a Programmable Factory for Adaptable Manufacturing of IC’s Ieee Transactions On Semiconductor Manufacturing. 7: 159-175. DOI: 10.1109/66.286852 |
0.305 |
|
| 1994 |
Zhao T, Cao M, Saraswat KC, Plummer JD. A Vertical Submicron Polysilicon Thin-Film Transistor Using A Low Temperature Process Ieee Electron Device Letters. 15: 415-417. DOI: 10.1109/55.320986 |
0.614 |
|
| 1994 |
Cao M, Zhao T, Saraswat KC, Plummer JD. A Simple EEPROM Cell using Twin Polysilicon thin Film Transistors Ieee Electron Device Letters. 15: 304-306. DOI: 10.1109/55.296224 |
0.573 |
|
| 1994 |
King T, Saraswat KC. Polycrystalline silicon-germanium thin-film transistors Ieee Transactions On Electron Devices. 41: 1581-1591. DOI: 10.1109/16.310109 |
0.443 |
|
| 1994 |
King T, McVittie J, Saraswat K, Pfiester J. Electrical properties of heavily doped polycrystalline silicon-germanium films Ieee Transactions On Electron Devices. 41: 228-232. DOI: 10.1109/16.277374 |
0.347 |
|
| 1994 |
Levent Degertekin F, Pei J, Khuri‐Yakub BT, Saraswat KC. Insituacoustic temperature tomography of semiconductor wafers Applied Physics Letters. 64: 1338-1340. DOI: 10.1063/1.111927 |
0.311 |
|
| 1993 |
Apte PP, Park H, Saraswat KC, Helms CR. Thermally Driven In-Situ Removal of Native Oxide Using Anhydrous Hydrogen Fluoride Mrs Proceedings. 318. DOI: 10.1557/Proc-318-281 |
0.395 |
|
| 1993 |
Degertekin F, Pei J, LEE Y, Khuri-Yakub B, Saraswat K. In-Situ Temperature Monitoring in Rtp by Acoustical Techniques Mrs Proceedings. 303. DOI: 10.1557/Proc-303-133 |
0.535 |
|
| 1993 |
Apte PP, Kubota T, Saraswat KC. Constant Current Stress Breakdown in Ultrathin SiO2 Films Journal of the Electrochemical Society. 140: 770-773. DOI: 10.1149/1.2056156 |
0.358 |
|
| 1993 |
Apte PP, Saraswat KC. SiO/sub 2/ degradation with charge injection polarity Ieee Electron Device Letters. 14: 512-514. DOI: 10.1109/55.257999 |
0.365 |
|
| 1993 |
Chang CY, McVittie JP, Saraswat KC, Lin KK. Backscattered deposition in Ar sputter etch of silicon dioxide Applied Physics Letters. 63: 2294-2296. DOI: 10.1063/1.110508 |
0.348 |
|
| 1992 |
Chu CL, Saraswat KC, Wong SS. Measurement Of Lateral Dopant Diffusion In Thin Silicide Layers Ieee Transactions On Electron Devices. 39: 2333-2340. DOI: 10.1109/16.158805 |
0.324 |
|
| 1992 |
Raje P, Saraswat K, Cham K. Accurate delay models for digital BiCMOS Ieee Transactions On Electron Devices. 39: 1456-1464. DOI: 10.1109/16.137326 |
0.334 |
|
| 1992 |
Raje P, Saraswat K, Cham K. Performance-driven scaling of BiCMOS technology Ieee Transactions On Electron Devices. 39: 685-694. DOI: 10.1109/16.123495 |
0.307 |
|
| 1992 |
Raje P, Saraswat K, Cham K. A new methodology for design of BiCMOS gates and comparison with CMOS Ieee Transactions On Electron Devices. 39: 339-347. DOI: 10.1109/16.121692 |
0.322 |
|
| 1992 |
Cao M, King T, Saraswat KC. Determination of the densities of gap states in hydrogenated polycrystalline Si and Si0.8Ge0.2 films Applied Physics Letters. 61: 672-674. DOI: 10.1063/1.107818 |
0.37 |
|
| 1992 |
Pavelescu C, McVittie JP, Chang C, Saraswat KC, Leong JY. High frequency C-V investigation of metal-oxide-semiconductor capacitors prepared by low temperature subatmospheric pressure chemical vapour deposition of SiO2 films on silicon substrates Thin Solid Films. 217: 68-74. DOI: 10.1016/0040-6090(92)90607-D |
0.408 |
|
| 1991 |
Apte PP, Venkatraman R, Saraswat KC, Moslehi MM, Yeakley R. Demonstration of Multiprocessing by Silicon Epitaxy Following In-Situ Cleaning Mrs Proceedings. 224. DOI: 10.1557/Proc-224-273 |
0.402 |
|
| 1991 |
Apte PP, Wood S, Booth L, Saraswat KC, Moslehi MM. Temperature Uniformity Optimization Using Three-Zone Lamp and Dynamic Control in Rapid Thermal Multiprocessor Mrs Proceedings. 224. DOI: 10.1557/Proc-224-209 |
0.318 |
|
| 1991 |
King T-, Saraswat KC, Pfiester JR. PMOS transistors in LPCVD polycrystalline silicon-germanium films Ieee Electron Device Letters. 12: 584-586. DOI: 10.1109/55.119205 |
0.376 |
|
| 1991 |
Chu CL, Chin G, Saraswat KC, Wong SS, Dutton R. Technology limitations for N/sup +//P/sup +/ polycide gate CMOS due to lateral dopant diffusion in silicide/polysilicon layers Ieee Electron Device Letters. 12: 696-698. DOI: 10.1109/55.116959 |
0.328 |
|
| 1991 |
Ritts R, Raje P, Plummer J, Saraswat K, Cham K. Merged BiCMOS logic to extend the CMOS/BiCMOS performance crossover below 2.5-V supply Ieee Journal of Solid-State Circuits. 26: 1606-1614. DOI: 10.1109/4.98979 |
0.576 |
|
| 1991 |
IslamRaja MM, Cappelli MA, McVittie JP, Saraswat KC. A 3-dimensional model for low-pressure chemical-vapor-deposition step coverage in trenches and circular vias Journal of Applied Physics. 70: 7137-7140. DOI: 10.1063/1.349797 |
0.335 |
|
| 1991 |
Cheng LY, McVittie JP, Saraswat KC. New test structure to identify step coverage mechanisms in chemical vapor deposition of silicon dioxide Applied Physics Letters. 58: 2147-2149. DOI: 10.1063/1.104988 |
0.338 |
|
| 1990 |
Wright P, Saraswat K. Thickness limitations of SiO/sub 2/ gate dielectrics for MOS ULSI Ieee Transactions On Electron Devices. 37: 1884-1892. DOI: 10.1109/16.57140 |
0.368 |
|
| 1990 |
Wright P, Kermani A, Saraswat K. Nitridation and post-nitridation anneals of SiO/sub 2/ for ultrathin dielectrics Ieee Transactions On Electron Devices. 37: 1836-1841. DOI: 10.1109/16.57134 |
0.327 |
|
| 1990 |
Kasai N, Wright P, Saraswat K. Hot-carrier-degradation characteristics for fluorine-incorporated nMOSFET's Ieee Transactions On Electron Devices. 37: 1426-1431. DOI: 10.1109/16.106236 |
0.355 |
|
| 1989 |
Saraswat KC, Moslehi MM, Grossman DD, Wood S, Wright P, Booth L. Single Wafer Rapid Thermal Multiprocessing Mrs Proceedings. 146. DOI: 10.1557/Proc-146-3 |
0.312 |
|
| 1989 |
Joshi A, Hu HS, Yaney DL, Gardner D, Saraswat K. Fundamental factors governing improved performance of Al–Si/Ti multilayer metallization for very large scale integration Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 1497-1503. DOI: 10.1116/1.576085 |
0.605 |
|
| 1989 |
Wright PJ, Kasai N, Inoue S, Saraswat KC. Hot-electron immunity of SiO/sub 2/ dielectrics with fluorine incorporation Ieee Electron Device Letters. 10: 347-348. DOI: 10.1109/55.31752 |
0.338 |
|
| 1989 |
Wong M, Saraswat K. SATPOLY: a self-aligned tungsten on polysilicon process for CMOS VLSI applications Ieee Transactions On Electron Devices. 36: 1355-1361. DOI: 10.1109/16.30941 |
0.356 |
|
| 1989 |
Wright P, Saraswat K. The effect of fluorine in silicon dioxide gate dielectrics Ieee Transactions On Electron Devices. 36: 879-889. DOI: 10.1109/16.299669 |
0.367 |
|
| 1988 |
Schreyer TA, Bariva AJ, Mcvittie JP, Saraswat KC. Specific contact resistivity measurements of reactive ion etched contacts Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1402-1406. DOI: 10.1116/1.575713 |
0.323 |
|
| 1988 |
Wong M, Saraswat KC. Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition Ieee Electron Device Letters. 9: 582-584. DOI: 10.1109/55.9283 |
0.365 |
|
| 1988 |
Wright P, Moslehi M, Saraswat K. Electrical characteristics and irradiation sensitivity of IGFETs with rapidly grown ultrathin gate dielectrics Ieee Transactions On Electron Devices. 35: 2438-2439. DOI: 10.1109/16.8853 |
0.324 |
|
| 1988 |
Wright P, Loh W, Saraswat K. Low-resistance submicrometer contacts to silicon Ieee Transactions On Electron Devices. 35: 1328-1333. DOI: 10.1109/16.2555 |
0.322 |
|
| 1988 |
Kao DB, Mcvittie JP, Saraswat KC, Nix WD. Two Dimensional Thermal Oxidation of Silicon—II. Modeling Stress Effects in Wet Oxides Ieee Transactions On Electron Devices. 35: 25-37. DOI: 10.1109/16.2412 |
0.306 |
|
| 1988 |
Moslehi MM, Kermani A, Saraswat KC. Linearly ramped temperature transient rapid thermal oxidation of silicon Applied Physics Letters. 53: 1104-1106. DOI: 10.1063/1.100656 |
0.329 |
|
| 1987 |
Moslehi MM, Saraswat KC, Shatas SC. Microwave Plasma LPCVD of Tungsten in a Cold-Wall Lamp-Heated Rapid Thermal Processor Mrs Proceedings. 92. DOI: 10.1557/Proc-92-295 |
0.352 |
|
| 1987 |
Gardner DS, Saraswat K. Multilayered Interconnections for VLSI Mrs Proceedings. 103. DOI: 10.1557/Proc-103-343 |
0.344 |
|
| 1987 |
Wong M, Kobayashi N, Browning R, Paine D, Saraswat KC. The Effects of Chemical Oxide on the Deposition of Tungsten by the Silicon Reduction of Tungsten Hexafluoride Journal of the Electrochemical Society. 134: 2339-2345. DOI: 10.1149/1.2100882 |
0.346 |
|
| 1987 |
Moslehi MM, Shatas SC, Saraswat KC, Meindl JD. Interfacial and breakdown characteristics of MOS devices with rapidly grown ultrathin SiO 2 gate insulators Ieee Transactions On Electron Devices. 34: 1407-1410. DOI: 10.1109/T-Ed.1987.23098 |
0.605 |
|
| 1987 |
Kao D, McVittie JP, Nix WD, Saraswat KC. Two-dimensional thermal oxidation of silicon—I. Experiments Ieee Transactions On Electron Devices. 34: 1008-1017. DOI: 10.1109/T-Ed.1987.23037 |
0.362 |
|
| 1987 |
Gardner DS, Meindl JD, Saraswat KC. Interconnection and Electromigration Scaling Theory Ieee Transactions On Electron Devices. 34: 633-643. DOI: 10.1109/T-Ed.1987.22974 |
0.555 |
|
| 1987 |
Moslehi MM, Saraswat KC. Formation of MOS Gates by rapid thermal/microwave remote-plasma multiprocessing Ieee Electron Device Letters. 8: 421-424. DOI: 10.1109/Edl.1987.26680 |
0.367 |
|
| 1986 |
Loh WM, Wright PJ, Schreyer TA, Swirhun SE, Saraswat KC, Meindl JD. IVB-7 the sidewall resistor—A novel test structure to reliably extract specific contact resistivity Ieee Transactions On Electron Devices. 33: 1855-1856. DOI: 10.1109/T-Ed.1986.22803 |
0.548 |
|
| 1986 |
Loh WM, Wright PJ, Schreyer TA, Swirhun SE, Saraswat KC, Meindl JD. The sidewall resistor—A novel test structure to reliably extract specific contact resistivity Ieee Electron Device Letters. 7: 477-479. DOI: 10.1109/Edl.1986.26445 |
0.547 |
|
| 1986 |
Moslehi MM, Han CJ, Saraswat KC, Helms CR, Shatas S. Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide). Cheminform. 17. DOI: 10.1002/Chin.198601032 |
0.308 |
|
| 1985 |
Moslehi MM, Han CJ, Saraswat KC, Helms CR, Shatas S. Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide) Journal of the Electrochemical Society. 132: 2189-2197. DOI: 10.1149/1.2114317 |
0.325 |
|
| 1985 |
Han CJ, Moslehi MM, Helms CR, Saraswat KC. Summary Abstract: Characterization of thermally nitrided SiO2 using Auger sputter profiling Journal of Vacuum Science and Technology. 3: 804-805. DOI: 10.1116/1.573314 |
0.304 |
|
| 1985 |
Kao DB, Saraswat KC, Mcvittie JP. Annealing of Oxide Fixed Charges in Scaled Polysilicon Gate MOS Structures Ieee Transactions On Electron Devices. 32: 918-925. DOI: 10.1109/T-Ed.1985.22048 |
0.426 |
|
| 1985 |
Shenai K, Swanson RM, Saraswat KC, Dutton RW, Sangiorgi E. Modeling and Characterization of Dopant Redistributions in Metal and Silicide Contacts Ieee Transactions On Electron Devices. 32: 793-799. DOI: 10.1109/T-Ed.1985.22022 |
0.4 |
|
| 1985 |
Gardner DS, Michalka TL, Saraswat KC, Barbee TW, Mcvittie JP, Meindl JD. Layered and Homogeneous Films of Aluminum and Aluminum/Silicon with Titanium and Tungsten for Multilevel Interconnects Ieee Transactions On Electron Devices. 32: 174-183. DOI: 10.1109/T-Ed.1985.21927 |
0.601 |
|
| 1985 |
Moslehi MM, Saraswat KC. Thermal nitridation of Si and SiO 2 for VLSI Ieee Transactions On Electron Devices. 32: 106-123. DOI: 10.1109/T-Ed.1985.21920 |
0.464 |
|
| 1985 |
Swirhun S, Sangiorgi E, Weeks A, Swanson R, Saraswat K, Dutton R. A VLSI-suitable Schottky-barrier CMOS process Ieee Transactions On Electron Devices. 32: 194-202. DOI: 10.1109/Jssc.1985.1052283 |
0.343 |
|
| 1985 |
Singh HJ, Saraswat KC, Shott JD, Mcvittie JP, Meindl JD. Hydrogenation by Ion Implantation for Scaled SOI/PMOS Transistors Ieee Electron Device Letters. 6: 139-141. DOI: 10.1109/Edl.1985.26073 |
0.577 |
|
| 1985 |
Moslehi MM, Saraswat KC, Shatas SC. Rapid Thermal Nitridation of SiO2 for Nitroxide Thin Dielectrics Applied Physics Letters. 47: 1113-1115. DOI: 10.1063/1.96347 |
0.37 |
|
| 1985 |
Moslehi MM, Shatas SC, Saraswat KC. Thin SiO2 insulators grown by rapid thermal oxidation of silicon Applied Physics Letters. 47: 1353-1355. DOI: 10.1063/1.96278 |
0.302 |
|
| 1985 |
Moslehi MM, Fu CY, Saraswat K. Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge Journal of Applied Physics. 58: 2416-2419. DOI: 10.1063/1.335915 |
0.38 |
|
| 1984 |
Singh HJ, Saraswat KC, Meindl JD. VB-2 hydrogenation by ion implantation for VLSI/SOI applications Ieee Transactions On Electron Devices. 31: 1981-1982. DOI: 10.1109/T-Ed.1984.21877 |
0.482 |
|
| 1984 |
Monnig KA, Brors DL, Fair JA, Coney W, Saraswat KC. IIB-4 properties and deposition of low-pressure CVD tungsten-silicon films Ieee Transactions On Electron Devices. 31: 1965-1966. DOI: 10.1109/T-Ed.1984.21836 |
0.324 |
|
| 1984 |
Gardner D, Michalka T, Saraswat K, McVittie J, Barbee T, Meindl J. IIB-3 aluminum alloys with titanium, tungsten, and copper for multilayer interconnections Ieee Transactions On Electron Devices. 31: 1965-1965. DOI: 10.1109/T-Ed.1984.21835 |
0.488 |
|
| 1984 |
Swirhun S, Saraswat KC, Swanson RM. Contact Resistance of LPCVD W/Al and PtSi/W/Al Metallization Ieee Electron Device Letters. 5: 209-211. DOI: 10.1109/Edl.1984.25890 |
0.338 |
|
| 1984 |
Sangiorgi E, Shenai K, Saraswat KC, Swanson RM, Dutton RW. Accurate Barrier Modeling of Metal and Silicide Contacts Ieee Electron Device Letters. 5: 145-147. DOI: 10.1109/Edl.1984.25864 |
0.378 |
|
| 1984 |
Lie LN, Tiller WA, Saraswat KC. Thermal oxidation of silicides Journal of Applied Physics. 56: 2127-2132. DOI: 10.1063/1.334212 |
0.334 |
|
| 1983 |
Saraswat KC, Brors DL, Fair JA, Monnig KA, Beyers R. Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections Ieee Transactions On Electron Devices. 30: 1497-1505. DOI: 10.1109/T-Ed.1983.21328 |
0.431 |
|
| 1983 |
Saraswat KC, Singh H. Thermal Oxidation Of Heavily Phosphorus-Doped Thin Films Of Polycrystalline Silicon Cheminform. 14. DOI: 10.1002/Chin.198306034 |
0.359 |
|
| 1982 |
Saraswat KC, Singh H. Thermal Oxidation of Heavily Phosphorus‐Doped Thin Films of Polycrystalline Silicon Journal of the Electrochemical Society. 129: 2321-2326. DOI: 10.1149/1.2123503 |
0.34 |
|
| 1982 |
Saraswat KC, Mohammadi F. Effect of Scaling of Interconnections on the Time Delay of VLSI Circuits Ieee Transactions On Electron Devices. 29: 645-650. DOI: 10.1109/Jssc.1982.1051729 |
0.316 |
|
| 1982 |
Saraswat KC, Nowicki RS, Moulder JF. Thermal oxidation of tantalum silicide in O2and H2O Applied Physics Letters. 41: 1127-1129. DOI: 10.1063/1.93424 |
0.376 |
|
| 1981 |
Saraswat KC. Physical and Electrical Properties of Polycrystalline Silicon Thin Films Mrs Proceedings. 5. DOI: 10.1557/Proc-5-261 |
0.358 |
|
| 1981 |
Mandurah MM, Saraswat KC, Kamins TI. A model for conduction in polycrystalline silicon—Part II: Comparison of theory and experiment Ieee Transactions On Electron Devices. 28: 1171-1176. DOI: 10.1109/T-Ed.1981.20505 |
0.348 |
|
| 1981 |
Mandurah MM, Saraswat KC, Kamins TI. A model for conduction in polycrystalline silicon—Part I: Theory Ieee Transactions On Electron Devices. 28: 1163-1171. DOI: 10.1109/T-Ed.1981.20504 |
0.314 |
|
| 1980 |
Mohammadi F, Saraswat KC. Properties of Sputtered Tungsten Silicide for MOS Integrated Circuit Applications Journal of the Electrochemical Society. 127: 450-454. DOI: 10.1149/1.2129686 |
0.44 |
|
| 1980 |
Mohammadi F, Saraswat KC, Meindl JD. A High-Voltage MOSFET in Polycrystalline Silicon Ieee Transactions On Electron Devices. 27: 293-295. DOI: 10.1109/T-Ed.1980.19854 |
0.637 |
|
| 1980 |
Kamins TI, Lee KF, Gibbons JF, Saraswat KC. A monolithic integrated circuit fabricated in laser-annealed polysilicon Ieee Transactions On Electron Devices. 27: 290-293. DOI: 10.1109/T-Ed.1980.19853 |
0.429 |
|
| 1980 |
Saraswat KC, Mohammadi F. Work Function of WSI<inf>2</inf> Ieee Electron Device Letters. 1: 18-19. DOI: 10.1109/Edl.1980.25213 |
0.369 |
|
| 1980 |
Rouse J, Mohammadi F, Helms CR, Saraswat KC. Studies of steam-oxidized WSi2 by Auger sputter profiling Applied Physics Letters. 37: 305-307. DOI: 10.1063/1.91915 |
0.399 |
|
| 1980 |
Mandurah MM, Saraswat KC, Kamins TI. Arsenic segregation in polycrystalline silicon Applied Physics Letters. 36: 683-685. DOI: 10.1063/1.91623 |
0.351 |
|
| 1980 |
Mandurah MM, Saraswat KC, Helms CR, Kamins TI. Dopant segregation in polycrystalline silicon Journal of Applied Physics. 51: 5755-5763. DOI: 10.1063/1.327582 |
0.339 |
|
| 1980 |
Lee KF, Gibbons JF, Saraswat KC, Kamins TI, Lam HW, Tasch AF, Holloway TC. Properties Of Mosfets Fabricated In Laser-Annealed Polysilicon Films Laser and Electron Beam Processing of Materials. 632-638. DOI: 10.1016/B978-0-12-746850-1.50092-X |
0.387 |
|
| 1980 |
Mohammadi F, Saraswat KC. Properties Of Sputtered Tungsten Silicide For Mos Integrated Circuit Applications Cheminform. 11. DOI: 10.1002/Chin.198026328 |
0.316 |
|
| 1979 |
Mandurah MM, Saraswat KC, Kamins TI. Phosphorus Doping of Low Pressure Chemically Vapor‐Deposited Silicon Films Journal of the Electrochemical Society. 126: 1019-1023. DOI: 10.1149/1.2129167 |
0.338 |
|
| 1979 |
Reif R, Kamins TI, Saraswat KC. A Model for Dopant Incorporation into Growing Silicon Epitaxial Films II . Comparison of Theory and Experiment Journal of the Electrochemical Society. 126: 653-660. DOI: 10.1149/1.2129103 |
0.309 |
|
| 1979 |
Reif R, Kamins TI, Saraswat KC. A Model for Dopant Incorporation into Growing Silicon Epitaxial Films I . Theory Journal of the Electrochemical Society. 126: 644-652. DOI: 10.1149/1.2129102 |
0.326 |
|
| 1979 |
Mohammadi F, Saraswat KC, Meindl JD. Kinetics of the thermal oxidation of WSi2 Applied Physics Letters. 35: 529-531. DOI: 10.1063/1.91197 |
0.588 |
|
| 1979 |
Lee KF, Gibbons JF, Saraswat KC, Kamins TI. Thin film MOSFET's fabricated in laser-annealed polycrystalline silicon Applied Physics Letters. 35: 173-175. DOI: 10.1063/1.91025 |
0.401 |
|
| 1979 |
Mandurah MM, Saraswat KC, Kamins TI. Phosphorus Doping Of Low Pressure Chemically Vapor-Deposited Silicon Films Cheminform. 10. DOI: 10.1002/Chin.197942005 |
0.339 |
|
| 1978 |
Kamins TI, Mandurah MM, Saraswat KC. Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films Journal of the Electrochemical Society. 125: 927-932. DOI: 10.1149/1.2131593 |
0.33 |
|
| 1978 |
Reif R, Kamins TI, Saraswat K. Transient and Steady‐State Response of the Dopant System of a Silicon Epitaxial Reactor: Transfer‐Function Approach Journal of the Electrochemical Society. 125: 1860-1866. DOI: 10.1149/1.2131311 |
0.323 |
|
| 1978 |
Reif R, Saraswat KC, Kamins TI. WP-A4 a model for dopant incorporation into silicon epitaxial films Ieee Transactions On Electron Devices. 25: 1358-1358. DOI: 10.1109/T-Ed.1978.19345 |
0.31 |
|
| 1978 |
Saraswat KC, Meindl JD. Breakdown walkout in planar p-n junctions Solid State Electronics. 21: 813-819. DOI: 10.1016/0038-1101(78)90305-2 |
0.556 |
|
| 1978 |
Kamins TI, Mandurah MM, Saraswat KC. Structure And Stability Of Low Pressure Chemically Vapor-Deposited Silicon Films Cheminform. 9. DOI: 10.1002/Chin.197838014 |
0.323 |
|
| 1977 |
Saraswat KC, Meindl JD. Low Temperature Diffusion of Boron from Diborane Using Carbon Dioxide as Oxidant Journal of the Electrochemical Society. 124: 471-472. DOI: 10.1149/1.2133329 |
0.51 |
|
| 1977 |
Saraswat KC, Meindl JD. Low Temperature Diffusion Of Boron From Diborane Using Carbon Dioxide As Oxidant Cheminform. 8. DOI: 10.1002/Chin.197725008 |
0.51 |
|
| 1976 |
Saraswat KC, Meindl JD. A New Bipolar Process Borsenic Ieee Journal of Solid-State Circuits. 11: 495-500. DOI: 10.1109/Jssc.1976.1050765 |
0.577 |
|
| 1975 |
Saraswat KC, Meindl JD, Berger J. A High Voltage MOS Switch Ieee Journal of Solid-State Circuits. 10: 136-142. DOI: 10.1109/Jssc.1975.1050578 |
0.581 |
|
| Show low-probability matches. |