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Sunkook Kim, Ph.D. - Publications

Affiliations: 
2009 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Lee DH, Dongquoc V, Hong S, Kim SI, Kim E, Cho SY, Oh CH, Je Y, Kwon MJ, Hoang Vo A, Seo DB, Lee JH, Kim S, Kim ET, Park JH. Surface Passivation of Layered MoSe via van der Waals Stacking of Amorphous Hydrocarbon. Small (Weinheim An Der Bergstrasse, Germany). e2202912. PMID 36058645 DOI: 10.1002/smll.202202912  0.312
2021 Cho H, Pujar P, Choi M, Naqi M, Cho Y, Rho HY, Lee J, Kim S. Expeditiously Crystallized Pure Orthorhombic-HfZrO for Negative Capacitance Field Effect Transistors. Acs Applied Materials & Interfaces. PMID 34894665 DOI: 10.1021/acsami.1c21387  0.308
2020 Park H, Liu N, Kim BH, Kwon S, Baek S, Kim S, Lee HK, Yoon YJ, Kim S. Exceptionally Uniform and Scalable Multilayer MoS Phototransistor Array Based on Large-Scale MoS Grown by RF Sputtering, Electron Beam Irradiation and Sulfurization. Acs Applied Materials & Interfaces. PMID 32281367 DOI: 10.1021/acsami.0c02393  0.308
2017 Yoo G, Hong S, Heo J, Kim S. Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer Applied Physics Letters. 110: 053112. DOI: 10.1063/1.4975626  0.328
2016 Yoo G, Choi SL, Lee S, Yoo B, Kim S, Oh MS. Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer Applied Physics Letters. 108. DOI: 10.1063/1.4955024  0.402
2016 Hong YK, Yoo G, Kwon J, Hong S, Song WG, Liu N, Omkaram I, Yoo B, Ju S, Kim S, Oh MS. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics Aip Advances. 6. DOI: 10.1063/1.4953062  0.448
2016 Hong YK, Kim S, Kim HT, Kim BG, Lee S, Park DH, Kim BH. Multifunctional π-conjugated poly (3-methylthiophene) nanotubes for optoelectronic and field emissive devices Organic Electronics: Physics, Materials, Applications. 32: 59-64. DOI: 10.1016/J.Orgel.2016.02.014  0.398
2015 Jung C, Kim SM, Moon H, Han G, Kwon J, Hong YK, Omkaram I, Yoon Y, Kim S, Park J. Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector. Scientific Reports. 5: 15313. PMID 26477744 DOI: 10.1038/Srep15313  0.366
2015 Kwon J, Hong YK, Han G, Omkaram I, Choi W, Kim S, Yoon Y. Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures. Advanced Materials (Deerfield Beach, Fla.). 27: 2224-30. PMID 25676825 DOI: 10.1002/Adma.201404367  0.337
2015 Kwon J, Hong YK, Kwon HJ, Park YJ, Yoo B, Kim J, Grigoropoulos CP, Oh MS, Kim S. Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes. Nanotechnology. 26: 035202. PMID 25548952 DOI: 10.1088/0957-4484/26/3/035202  0.398
2015 Kwon J, Hong S, Hong YK, Lee S, Yoo G, Yoon Y, Kim S. Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap Applied Physics Letters. 107. DOI: 10.1063/1.4935979  0.4
2015 Kwon HJ, Kim S, Jang J, Grigoropoulos CP. Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Applied Physics Letters. 106. DOI: 10.1063/1.4916131  0.418
2014 Lee J, Dak P, Lee Y, Park H, Choi W, Alam MA, Kim S. Two-dimensional layered MoS₂ biosensors enable highly sensitive detection of biomolecules. Scientific Reports. 4: 7352. PMID 25516382 DOI: 10.1038/Srep07352  0.307
2014 Liu N, Kim P, Kim JH, Ye JH, Kim S, Lee CJ. Large-area atomically thin MoS2 nanosheets prepared using electrochemical exfoliation. Acs Nano. 8: 6902-10. PMID 24937086 DOI: 10.1021/Nn5016242  0.414
2014 Kwon J, Omkaram I, Song W, Kim M, Ki HY, Choi W, Kim S. Electrical performance of local bottom-gated MoS2 thin-film transistors Journal of Information Display. 15: 107-110. DOI: 10.1080/15980316.2014.917340  0.303
2014 Lee Y, Lee J, Kim S, Park HS. Rendering High Charge Density of States in Ionic Liquid-Gated MoS2 Transistors Journal of Physical Chemistry C. 118: 18278-18282. DOI: 10.1021/Jp5063836  0.328
2014 Cho EH, Song WG, Park CJ, Kim J, Kim S, Joo J. Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches Nano Research. 8: 790-800. DOI: 10.1007/S12274-014-0561-5  0.387
2012 Tayebi N, Kim S, Chen RJ, Tran Q, Franklin N, Nishi Y, Ma Q, Rao V. Tuning the built-in electric field in ferroelectric Pb(Zr(0.2)Ti(0.8))O3 films for long-term stability of single-digit nanometer inverted domains. Nano Letters. 12: 5455-63. PMID 23043427 DOI: 10.1021/Nl302911K  0.347
2012 Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY, Jin YW, Lee SY, Jena D, Choi W, Kim K. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Communications. 3: 1011. PMID 22910357 DOI: 10.1038/Ncomms2018  0.451
2012 Kim ES, Kim S, Lee YS, Lee SY, Lee S, Choi W, Peelaers H, Van De Walle CG, Hwang WS, Kosel T, Jena D. Multilayer transition-metal dichalcogenide channel Thin-Film Transistors Technical Digest - International Electron Devices Meeting, Iedm. 5.5.1-5.5.4. DOI: 10.1109/IEDM.2012.6478985  0.308
2012 Ko YH, Kim S, Park W, Yu JS. Facile fabrication of forest-like ZnO hierarchical structures on conductive fabric substrate Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 355-357. DOI: 10.1002/Pssr.201206265  0.358
2012 Yang J, Park JK, Kim S, Choi W, Lee S, Kim H. Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics Physica Status Solidi (a). 209: 2087-2090. DOI: 10.1002/Pssa.201228303  0.391
2011 Kim S, Kwon HJ, Lee S, Shim H, Chun Y, Choi W, Kwack J, Han D, Song M, Kim S, Mohammadi S, Kee I, Lee SY. Low-power flexible organic light-emitting diode display device. Advanced Materials (Deerfield Beach, Fla.). 23: 3511-6. PMID 21735486 DOI: 10.1002/Adma.201101066  0.537
2011 Kim S, Choi W, Rim W, Chun Y, Shim H, Kwon H, Kim J, Kee I, Kim S, Lee S, Park J. A Highly Sensitive Capacitive Touch Sensor Integrated on a Thin-Film-Encapsulated Active-Matrix OLED for Ultrathin Displays Ieee Transactions On Electron Devices. 58: 3609-3615. DOI: 10.1109/Ted.2011.2162844  0.357
2011 Kim S, Srisungsitthisunti P, Lee C, Xu M, Ye PD, Qi M, Xu X, Zhou C, Ju S, Janes DB. Selective contact anneal effects on indium oxide nanowire transistors using femtosecond laser Journal of Physical Chemistry C. 115: 17147-17153. DOI: 10.1021/Jp203342J  0.421
2011 Kim S, Kwon H, Lee S, Shim H, Chun Y, Choi W, Kwack J, Han D, Song M, Kim S, Mohammadi S, Kee I, Lee SY. Flexible Displays: Low-Power Flexible Organic Light-Emitting Diode Display Device (Adv. Mater. 31/2011) Advanced Materials. 23: 3475-3475. DOI: 10.1002/Adma.201190120  0.482
2010 Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M. DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology. 21: 385203. PMID 20798468 DOI: 10.1088/0957-4484/21/38/385203  0.577
2010 Kim S, Kim S, Park J, Ju S, Mohammadi S. Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry. Acs Nano. 4: 2994-8. PMID 20450163 DOI: 10.1021/Nn1006094  0.561
2010 Sayer RA, Kim S, Franklin AD, Mohammadi S, Fisher TS. Shot noise thermometry for thermal characterization of templated carbon nanotubes Ieee Transactions On Components and Packaging Technologies. 33: 178-183. DOI: 10.1109/Tcapt.2009.2038488  0.535
2009 Aksu F, Topacoglu H, Arman C, Atac A, Tetik S, Hasanovic A, Kulenovic A, Mornjakovic Z, Pikula B, Sarac-Hadzihalilovic A, Voljevica A, Bamac B, Colak T, Alemdar M, Dundar G, ... ... Kim SH, ... ... Kim SY, et al. Poster presentations. Surgical and Radiologic Anatomy : Sra. 31: 95-229. PMID 27392492 DOI: 10.1007/BF03371486  0.316
2009 Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/Adma.200801032  0.514
2009 Back JH, Tsai CL, Kim S, Mohammadi S, Shim M. Manifestation of Kohn anomaly in 1/f fluctuations in metallic carbon nanotubes. Physical Review Letters. 103: 215501. PMID 20366051 DOI: 10.1103/Physrevlett.103.215501  0.509
2008 Back JH, Kim S, Mohammadi S, Shim M. Low-frequency noise in ambipolar carbon nanotube transistors. Nano Letters. 8: 1090-4. PMID 18351749 DOI: 10.1021/Nl073140G  0.54
2008 Ju S, Kim S, Mohammadi S, Janes DB, Ha YG, Facchetti A, Marks TJ. Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements Applied Physics Letters. 92. DOI: 10.1063/1.2830005  0.542
2007 Kim SK, Xuan Y, Ye PD, Mohammadi S, Back JH, Shim M. Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors Applied Physics Letters. 90. DOI: 10.1063/1.2724904  0.531
2005 Kim S, Choi TY, Rabieirad L, Jeon JH, Shim M, Mohammadi S. A poly-Si gate carbon nanotube field effect transistor for high frequency applications Ieee Mtt-S International Microwave Symposium Digest. 2005: 303-306. DOI: 10.1109/MWSYM.2005.1516586  0.481
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