☰

Muhammad Usman, Ph.D. - Publications

Affiliations: 
2010 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Theory Physics
Tree Info Similar researchers PubMed Report error

40 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Usman M. Tunable bandgap and isotropic light absorption from bismuth-containing GaAs core-shell and multi-shell nanowires. Nanoscale. 12: 20973-20983. PMID 33053001 DOI: 10.1039/D0Nr04728G  0.379
2020 Usman M, Wong YZ, Hill CD, Hollenberg LCL. Framework for atomic-level characterisation of quantum computer arrays by machine learning Arxiv: Mesoscale and Nanoscale Physics. 6: 1-8. DOI: 10.1038/S41524-020-0282-0  0.342
2020 Anwar SJ, Usman M, Ramzan M, Khan MK. Quantum Fisher Information of Two Moving Four-Level Atoms Journal of Russian Laser Research. 41: 310-320. DOI: 10.1007/S10946-020-09880-Y  0.319
2019 Usman M. Towards low-loss telecom-wavelength photonic devices by designing GaBiAs/GaAs core-shell nanowires. Nanoscale. PMID 31612894 DOI: 10.1039/C9Nr07237C  0.351
2019 Usman M. Atomistic tight binding study of quantum confined Stark effect in GaBixAs1-x/GaAs quantum wells. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31288219 DOI: 10.1088/1361-648X/Ab307E  0.392
2018 Salfi J, Voisin B, Tankasala A, Bocquel J, Usman M, Simmons MY, Hollenberg LCL, Rahman R, Rogge S. Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots Physical Review X. 8: 31049. DOI: 10.1103/Physrevx.8.031049  0.597
2018 Tankasala A, Salfi J, Bocquel J, Voisin B, Usman M, Klimeck G, Simmons MY, Hollenberg LCL, Rogge S, Rahman R. Two-electron states of a group-V donor in silicon from atomistic full configuration interactions Physical Review B. 97. DOI: 10.1103/Physrevb.97.195301  0.672
2018 Usman M, Broderick CA, O'Reilly EP. Impact of disorder on the optoelectronic properties of GaNyAs1−x−yBix alloys and heterostructures Physical Review Applied. 10: 1-17. DOI: 10.1103/Physrevapplied.10.044024  0.319
2017 Usman M, Voisin B, Salfi J, Rogge S, Hollenberg LCL. Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon. Nanoscale. PMID 29082402 DOI: 10.1039/C7Nr05081J  0.319
2016 Usman M, Bocquel J, Salfi J, Voisin B, Tankasala A, Rahman R, Simmons MY, Rogge S, Hollenberg LC. Spatial metrology of dopants in silicon with exact lattice site precision. Nature Nanotechnology. PMID 27271965 DOI: 10.1038/Nnano.2016.83  0.625
2016 Usman M, Suvanam SS, Yazdi MG, Göthelid M, Sultan M, Hallén A. Stoichiometry of the ALD-Al2O3/4H-SiC interface by synchrotron-based XPS Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/25/255308  0.302
2016 Manzoor A, Afzal AM, Amin N, Arshad MI, Usman M, Rasool MN, Khan MF. Investigation of dielectric and optical properties of structurally modified bismuth ferrite nanomaterials Ceramics International. 42: 11447-11452. DOI: 10.1016/J.Ceramint.2016.04.083  0.309
2015 Usman M. Understanding the electric field control of the electronic and optical properties of strongly-coupled multi-layered quantum dot molecules. Nanoscale. 7: 16516-29. PMID 26395806 DOI: 10.1039/C5Nr04710B  0.367
2015 Usman M, Rahman R, Salfi J, Bocquel J, Voisin B, Rogge S, Klimeck G, Hollenberg LL. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 154207. PMID 25783758 DOI: 10.1088/0953-8984/27/15/154207  0.663
2015 Usman M, Hill CD, Rahman R, Klimeck G, Simmons MY, Rogge S, Hollenberg LCL. Strain and electric field control of hyperfine interactions for donor spin qubits in silicon Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.245209  0.677
2015 Suvanam SS, Gulbinas K, Usman M, Linnarson MK, Martin DM, Linnros J, Grivickas V, Hallén A. 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption Journal of Applied Physics. 117. DOI: 10.1063/1.4914521  0.318
2015 Ahmed S, Sundaresan S, Ryu H, Usman M. Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields Journal of Computational Electronics. 14: 543-556. DOI: 10.1007/S10825-015-0682-4  0.606
2014 Tasco V, Usman M, De Giorgi M, Passaseo A. Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics. Nanotechnology. 25: 055207. PMID 24407042 DOI: 10.1088/0957-4484/25/5/055207  0.399
2014 Broderick CA, Mazzucato S, Carrère H, Amand T, Makhloufi H, Arnoult A, Fontaine C, Donmez O, Erol A, Usman M, O'Reilly EP, Marie X. Anisotropic electron g factor as a probe of the electronic structure of GaBix As1-x/ GaAs epilayers Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.195301  0.361
2014 Usman M. Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks Physical Review B. 89. DOI: 10.1103/Physrevb.89.081302  0.363
2014 Usman M, O'Reilly EP. Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells Applied Physics Letters. 104: 71103. DOI: 10.1063/1.4865827  0.359
2014 Usman M, Nawaz M. Device design assessment of 4H–SiC n-IGBT – A simulation study Solid-State Electronics. 92: 5-11. DOI: 10.1016/J.Sse.2013.10.019  0.305
2013 Usman M, Henkel C, Hallén A. HfO2/Al2O3 bilayered high-k dielectric for passivation and gate insulator in 4H-SiC devices Ecs Journal of Solid State Science and Technology. 2: N3087-N3091. DOI: 10.1149/2.013308Jss  0.317
2013 Usman M, Broderick CA, Batool Z, Hild K, Hosea TJC, Sweeney SJ, O'Reilly EP. Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.115104  0.324
2013 Usman M, Broderick CA, O'Reilly EP. Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models Arxiv: Materials Science. 1566: 21-22. DOI: 10.1063/1.4848265  0.312
2013 Tasco V, Usman M, Todaro MT, Giorgi MD, Passaseo A. Understanding polarization properties of InAs quantum dots by atomistic modeling of growth dynamics Arxiv: Mesoscale and Nanoscale Physics. 1566: 15-16. DOI: 10.1063/1.4848262  0.364
2013 Tahir N, Karim A, Persson KA, Hussain ST, Cruz AG, Usman M, Naeem M, Qiao R, Yang W, Chuang YD, Hussain Z. Surface defects: Possible source of room temperature ferromagnetism in Co-doped ZnO nanorods Journal of Physical Chemistry C. 117: 8968-8973. DOI: 10.1021/Jp311012M  0.307
2013 Broderick CA, Usman M, O'Reilly EP. 12‐band k · p model for dilute bismide alloys of (In)GaAs derived from supercell calculations Physica Status Solidi B-Basic Solid State Physics. 250: 773-778. DOI: 10.1002/Pssb.201200423  0.302
2012 Usman M, Tasco V, Todaro MT, De Giorgi M, O'Reilly EP, Klimeck G, Passaseo A. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties. Nanotechnology. 23: 165202. PMID 22469563 DOI: 10.1088/0957-4484/23/16/165202  0.56
2012 Usman M. Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots Physical Review B. 86: 155444. DOI: 10.1103/Physrevb.86.155444  0.356
2012 Broderick CA, Usman M, Sweeney SJ, O'Reilly EP. Band engineering in dilute nitride and bismide semiconductor lasers Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/9/094011  0.301
2011 Usman M, Tan YH, Ryu H, Ahmed SS, Krenner HJ, Boykin TB, Klimeck G. Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations. Nanotechnology. 22: 315709. PMID 21737873 DOI: 10.1088/0957-4484/22/31/315709  0.666
2011 Usman M, Broderick CA, Lindsay A, O’Reilly EP. Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs Physical Review B. 84. DOI: 10.1103/Physrevb.84.245202  0.311
2011 Usman M, Inoue T, Harda Y, Klimeck G, Kita T. Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks Physical Review B. 84. DOI: 10.1103/Physrevb.84.115321  0.558
2011 Usman M. In-plane polarization anisotropy of ground state optical intensity in InAs/GaAs quantum dots Journal of Applied Physics. 110: 94512. DOI: 10.1063/1.3657783  0.367
2011 Usman M, Heck S, Clarke E, Spencer P, Ryu H, Murray R, Klimeck G. Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) Journal of Applied Physics. 109: 104510. DOI: 10.1063/1.3587167  0.655
2010 Maaz K, Karim S, Usman M, Mumtaz A, Liu J, Duan JL, Maqbool M. Effect of crystallographic texture on magnetic characteristics of cobalt nanowires Nanoscale Research Letters. 5: 1111-1117. DOI: 10.1007/S11671-010-9610-5  0.301
2009 Usman M, Ryu H, Woo I, Ebert DS, Klimeck G. Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data Ieee Transactions On Nanotechnology. 8: 330-344. DOI: 10.1109/Tnano.2008.2011900  0.661
2009 Usman M, Vasileska D, Klimeck G. Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications Aip Conference Proceedings. 1199: 527-528. DOI: 10.1063/1.3295541  0.5
2007 Klimeck G, Ahmed S, Kharche N, Korkusinski M, Usman M, Prada M, Boykin T. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications Ieee Transactions On Electron Devices. 54: 2090-2099. DOI: 10.1109/Ted.2007.904877  0.717
Show low-probability matches.