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Jiann S. Yuan - Publications

Affiliations: 
University of Central Florida, Orlando, FL, United States 
Area:
Electronics and Electrical Engineering, Computer Science
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75 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Yuan JS, Bi Y. Process and temperature robust voltage multiplier design for RF energy harvesting Microelectronics Reliability. 55: 107-113. DOI: 10.1016/j.microrel.2014.09.024  0.317
2015 Kritchanchai E, Yuan JS. CMOS voltage-controlled oscillator resilient design for wireless communication applications Wmsci 2015 - 19th World Multi-Conference On Systemics, Cybernetics and Informatics, Proceedings. 1: 249-253.  0.333
2014 Yuan JS, Chen S. Power amplifier resilient design for process and temperature variations using an on-chip PLL sensing signal Microelectronics Reliability. 54: 167-171. DOI: 10.1016/J.Microrel.2013.09.006  0.417
2013 Yuan JS, Kritchanchai E. Power amplifier resilient design for process, voltage, and temperature variations Microelectronics Reliability. 53: 856-860. DOI: 10.1016/J.Microrel.2013.02.003  0.42
2013 Jang SL, Yuan JS, Yen SD, Kritchanchai E, Huang GW. Experimental evaluation of hot electron reliability on differential Clapp-VCO Microelectronics Reliability. 53: 254-258. DOI: 10.1016/J.Microrel.2012.08.004  0.424
2012 Steighner JB, Yuan JS. Examination of hot carrier effects of the AlGaAs/InGaAs pHEMT through device simulation Microelectronics Reliability. 52: 2932-2940. DOI: 10.1016/J.Microrel.2012.07.015  0.406
2012 Yen HD, Yuan JS, Wang RL, Huang GW, Yeh WK, Huang FS. RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments Microelectronics Reliability. 52: 2655-2659. DOI: 10.1016/J.Microrel.2012.04.007  0.465
2011 Liu Y, Yuan JS. CMOS RF power amplifier variability and reliability resilient biasing design and analysis Ieee Transactions On Electron Devices. 58: 540-546. DOI: 10.1109/TED.2010.2093141  0.34
2011 Liu Y, Yuan JS. CMOS RF low-noise amplifier design for variability and reliability Ieee Transactions On Device and Materials Reliability. 11: 450-457. DOI: 10.1109/TDMR.2011.2160350  0.348
2011 Liu X, Yuan JS, Liou JJ. Thermal reliability of VCO using InGaP/GaAs HBTs Microelectronics Reliability. 51: 2147-2152. DOI: 10.1016/J.Microrel.2011.07.019  0.324
2011 Kutty K, Yuan JS, Chen S. Evaluation of gate oxide breakdown effect on cascode class e power amplifier performance Microelectronics Reliability. 51: 1302-1308. DOI: 10.1016/j.microrel.2011.03.027  0.346
2010 Yuan JS, Ma J, Yeh WK, Hsu CW. Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances Microelectronics Reliability. 50: 807-812. DOI: 10.1016/J.Microrel.2010.02.019  0.414
2010 Yuan JS, Ma J. Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit Microelectronics Reliability. 50: 801-806. DOI: 10.1016/J.Microrel.2010.02.009  0.467
2010 Liu X, Yuan Js, Liou JJ. Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance Microelectronics Reliability. 50: 365-369. DOI: 10.1016/J.Microrel.2009.12.007  0.305
2008 Yuan JS, Tang H. CMOS RF design for reliability using adaptive gate-source biasing Ieee Transactions On Electron Devices. 55: 2348-2353. DOI: 10.1109/TED.2008.928024  0.376
2008 Yuan JS, Jiang L. Evaluation of hot-electron effect on LDMOS device and circuit performances Ieee Transactions On Electron Devices. 55: 1519-1523. DOI: 10.1109/TED.2008.922850  0.358
2008 Yuan JS, Ma J. Evaluation of RF-stress effect on class-E MOS power-amplifier efficiency Ieee Transactions On Electron Devices. 55: 430-434. DOI: 10.1109/TED.2007.911092  0.32
2008 Yuan JS, Ma J. Gate oxide breakdown location effect on power amplifier and mixed-signal circuits International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 1365-1368. DOI: 10.1109/ICSICT.2008.4734815  0.352
2008 Liu X, Yuan JS, Liou JJ. Study of electrothermal stress effect on RF performance of InGaP/GaAs heterojunction bipolar transistor-based low-noise amplifier 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008. DOI: 10.1109/CSICS.2008.15  0.361
2008 Kuang W, Cao L, Yu C, Yuan JS. PMOS breakdown effects on digital circuits – Modeling and analysis Microelectronics Reliability. 48: 1597-1600. DOI: 10.1016/J.Microrel.2008.06.019  0.722
2008 Liu X, Yuan JS, Liou JJ. InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability Microelectronics Reliability. 48: 1212-1215. DOI: 10.1016/J.Microrel.2008.06.009  0.349
2007 Yu C, Yuan JS. Electrical and temperature stress effects on class-AB power amplifier performances Ieee Transactions On Electron Devices. 54: 1346-1350. DOI: 10.1109/TED.2007.896601  0.336
2007 Yu C, Yuan JS. CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect Ieee Transactions On Electron Devices. 54: 59-67. DOI: 10.1109/TED.2006.887517  0.343
2007 Yuan JS. HfO2 CMOS device and circuit reliability Ieee Conference On Electron Devices and Solid-State Circuits 2007, Edssc 2007. 63-66. DOI: 10.1109/EDSSC.2007.4450062  0.311
2006 Yu C, Yuan JS, Shen J, Xiao E. Study of electrical stress effect on SiGe HBT low-noise amplifier performance by simulation Ieee Transactions On Device and Materials Reliability. 6: 550-554. DOI: 10.1109/Tdmr.2006.887464  0.656
2006 Di J, Yuan JS. Energy-aware design for multi-rail encoding using NCL Iee Proceedings: Circuits, Devices and Systems. 153: 100-106. DOI: 10.1049/ip-cds:20059030  0.621
2006 Yu C, Yuan JS, Xiao E. Dynamic voltage stress effects on nMOS varactor Microelectronics Reliability. 46: 1812-1816. DOI: 10.1016/J.Microrel.2006.07.075  0.66
2005 Yu C, Yang H, Xiao E, Yuan JS. Voltage stress-induced performance degradation in NMOSFET mixer Ieice Electronics Express. 2: 133-137. DOI: 10.1587/Elex.2.133  0.428
2005 Yu C, Yuan JS. MOS RF reliability subject to dynamic voltage stress - Modeling and analysis Ieee Transactions On Electron Devices. 52: 1751-1758. DOI: 10.1109/TED.2005.852546  0.343
2005 Yuan JS, Di J. Teaching low-power electronic design in electrical and computer engineering Ieee Transactions On Education. 48: 169-182. DOI: 10.1109/TE.2004.837039  0.621
2005 Sadat A, Liu Y, Yu C, Yuan JS. Analysis and modeling of LC oscillator reliability Ieee Transactions On Device and Materials Reliability. 5: 119-126. DOI: 10.1109/Tdmr.2005.843831  0.371
2005 Yu C, Yuan JS, Sadat A. Dynamic stress-induced high-frequency noise degradations in nMOSFETs Microelectronics Reliability. 45: 1794-1799. DOI: 10.1016/J.Microrel.2005.07.096  0.611
2005 Yu C, Xiao E, Yuan JS. Voltage stress-induced hot carrier effects on SiGe HBT VCO Microelectronics Reliability. 45: 1402-1405. DOI: 10.1016/J.Microrel.2005.07.026  0.708
2005 Xiao E, Ghosh PP, Yu C, Yuan JS. Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications Microelectronics Reliability. 45: 1382-1385. DOI: 10.1016/J.Microrel.2005.07.025  0.649
2005 Di J, Yuan JS. Dynamic active-bit detection and operands exchange for designing energy-aware asynchronous multipliers Proceedings of the 2005 International Conference On Computer Design, Cdes'05. 218-223.  0.616
2005 Di J, Yuan JS. Energy-aware dual-rail bit-wise completion pipelined multipliers design Conference Proceedings - Ieee Southeastcon. 49-54.  0.643
2005 Yu C, Yuan JS. RF reliability subject to dynamic voltage stress in NMOS circuits Ieee International Reliability Physics Symposium Proceedings. 431-434.  0.416
2004 Yuan JS, Kuang W. Teaching asynchronous design in digital integrated circuits Ieee Transactions On Education. 47: 397-404. DOI: 10.1109/Te.2004.825923  0.611
2004 Kuang W, Yuan JS. Energy-efficient self-timed circuit design using supply voltage scaling Iee Proceedings: Circuits, Devices and Systems. 151: 278-284. DOI: 10.1049/ip-cds:20040296  0.626
2004 Yang L, Yuan JS. Modelling and analysis of ground bounce due to internal gate switching Iee Proceedings: Circuits, Devices and Systems. 151: 300-306. DOI: 10.1049/ip-cds:20040190  0.333
2004 Di J, Yuan JS, Hagedorn M. Analytical input mapping for modelling energy dissipation of complex CMOS gates Iee Proceedings: Circuits, Devices and Systems. 151: 294-299. DOI: 10.1049/ip-cds:20040160  0.568
2004 Yu C, Yuan JS. RF reliability of MOSFETs subject to electrical stress International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 2: 816-819.  0.362
2003 Di J, Yuan JS. Run-time reconfigurable power-aware pipelined signed array multiplier design Scs 2003 - International Symposium On Signals, Circuits and Systems, Proceedings. 2: 405-408. DOI: 10.1109/SCS.2003.1227075  0.618
2003 Yang L, Yuan JS. Enhanced techniques for current balanced logic in mixed-signal ICs Proceedings of Ieee Computer Society Annual Symposium On Vlsi, Isvlsi. 2003: 278-279. DOI: 10.1109/ISVLSI.2003.1183499  0.344
2003 Di J, Yuan JS, Demara R. High throughput power-aware FIR filter design based on fine-grain pipelining multipliers and adders Proceedings of Ieee Computer Society Annual Symposium On Vlsi, Isvlsi. 2003: 260-261. DOI: 10.1109/ISVLSI.2003.1183490  0.611
2003 Yang L, Yuan JS. Analyzing internal-switching induced simultaneous switching noise Proceedings - International Symposium On Quality Electronic Design, Isqed. 2003: 410-415. DOI: 10.1109/ISQED.2003.1194768  0.336
2003 Kuang W, Yuan JS. An adaptive supply-voltage scheme for low power self-timed CMOS digital design Proceedings of the Ieee International Conference On Vlsi Design. 2003: 315-319. DOI: 10.1109/ICVD.2003.1183156  0.617
2003 Yang L, Yuan JS. Design of a new CMOS output buffer with low switching noise Proceedings of the International Conference On Microelectronics, Icm. 2003: 131-134. DOI: 10.1109/ICM.2003.238496  0.346
2003 Yang L, Yuan JS. Design of enhancement current-balanced logic for mixed-signal ICS Proceedings - Ieee International Symposium On Circuits and Systems. 1.  0.37
2003 Xiao E, Yuan JS. Evaluation of oscillator phase noise subject to reliability Proceedings of the Annual Ieee International Frequency Control Symposium. 565-568.  0.591
2003 Xiao E, Yuan JS. RF circuit design in reliability Ieee Mtt-S International Microwave Symposium Digest. 1.  0.681
2003 Di J, Yuan JS. Power-aware pipelined multiplier design based on 2-dimensional pipeline gating Proceedings of the Ieee Great Lakes Symposium On Vlsi. 64-67.  0.629
2003 Xiao E, Yuan JS. RF circuit design in reliability Ieee Mtt-S International Microwave Symposium Digest. 1.  0.681
2002 Kuang W, Yuan JS. Low power operation using self-timed circuits and ultra-low supply voltage Proceedings of the International Conference On Microelectronics, Icm. 2002: 185-188. DOI: 10.1109/ICM-02.2002.1161526  0.635
2002 Li Q, Yuan JS. Linearity analysis and design optimisation for 0.18 μm CMOS RF mixer Iee Proceedings: Circuits, Devices and Systems. 149: 112-118. DOI: 10.1049/ip-cds:20020355  0.347
2002 Di J, Yuan JS, Hagedorn M. Switching activity modeling of multi-rail speed-independent circuits - A probabilistic approach Midwest Symposium On Circuits and Systems. 1: I475-I478.  0.591
2002 Di J, Yuan JS, Hagedorn M. Energy-aware multiplier design in multi-rail encoding logic Midwest Symposium On Circuits and Systems. 2: II294-II297.  0.581
2002 Kuang W, Yuan JS. Soft digital signal processing using self-timed circuits Ieee International Conference On Semiconductor Electronics, Proceedings, Icse. 194-198.  0.632
2002 Xiao E, Yuan JS. Hot carrier and soft breakdown effects on VCO performance Ieee Mtt-S International Microwave Symposium Digest. 1: 569-572.  0.597
2002 Xiao E, Yuan JS. RF circuit performance degradation due to hot carrier effects and soft breakdown Midwest Symposium On Circuits and Systems. 1.  0.674
1998 Davis KL, Yuan JS. Impact of technology on low-voltage CMOS and BiCMOS switching delay Conference Proceedings - Ieee Southeastcon. 170-173.  0.336
1997 Pham HD, Yuan JS. Circuit analysis of BiCMOS gate delay International Journal of Electronics. 83: 1-12.  0.386
1994 Yuan JS. Base current reversal in bipolar transistors and circuits: a review and update Iee Proceedings: Circuits, Devices and Systems. 141: 299-306. DOI: 10.1049/ip-cds:19941101  0.315
1993 Yuan JS. Avalanche breakdown effects on AIGaAs/GaAs HBT performance International Journal of Electronics. 74: 909-916. DOI: 10.1080/00207219308925892  0.318
1992 Liou JJ, Yuan JS, Shakouri H. Modulating the Bipolar Junction Transistor Subjected to Neutron Irradiation for Integrated Circuit Simulation Ieee Transactions On Electron Devices. 39: 593-597. DOI: 10.1109/16.123483  0.318
1992 Yuan JS. Delay Analysis of BiNMOS Driver Including High Current Transients Ieee Transactions On Electron Devices. 39: 587-592. DOI: 10.1109/16.123482  0.401
1991 Yuan JS, Liou JJ. An Improved Early Voltage Model for Advanced Bipolar Transistors Ieee Transactions On Electron Devices. 38: 179-182. DOI: 10.1109/16.65753  0.351
1991 Yuan JS. Optimal CMOS interconnect width design in electromigration-free material International Journal of Electronics. 71: 771-779. DOI: 10.1080/00207219108925519  0.306
1991 Liou JJ, Yuan JS. Physics-based large-signal heterojunction bipolar transistor model for circuit simulation Iee Proceedings. Part G. Electronic Circuits and Systems. 138: 97-103.  0.32
1990 Liou JJ, Yuan JS. Modeling the Reverse Base Current Phenomenon Due to Avalanche Effect in Advanced Bipolar Transistors Ieee Transactions On Electron Devices. 37: 2274-2276. DOI: 10.1109/16.59921  0.316
1989 Liou JJ, Drafts W, Yuan JS. Modeling the heterojunction bipolar transistor for integrated circuit simulation . 219-222.  0.316
1989 Liou JJ, Whittaker A, Yuan JS. Modeling the two-dimensional emitter-base and base-collector junction capacitances of bipolar junction transistors Physica Status Solidi (a) Applied Research. 113.  0.317
1988 Liou JJ, Yuan JS. COMPACT BIPOLAR TRANSISTOR MODEL FOR CIRCUIT SIMULATION Conference Proceedings - Ieee Southeastcon. 340-343. DOI: 10.1080/00207219008921168  0.362
1988 Yuan JS, Eisenstadt WR. Circuit modeling of collector current spreading effects in quasi-saturation for advanced bipolar transistors Solid State Electronics. 31: 1725-1731. DOI: 10.1016/0038-1101(88)90070-6  0.318
1988 Liou JJ, Yuan JS. A two-dimensional model for emitter-base junction capacitance of bipolar transistors Solid State Electronics. 31: 1541-1549. DOI: 10.1016/0038-1101(88)90028-7  0.304
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