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Neeraj Nepal, Ph.D. - Publications

Affiliations: 
2006 Kansas State University, Manhattan, KS, United States 
Area:
Condensed Matter Physics, Optics Physics
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77 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Gokhale VJ, Downey BP, Katzer DS, Nepal N, Lang AC, Stroud RM, Meyer DJ. Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics. Nature Communications. 11: 2314. PMID 32385280 DOI: 10.1038/S41467-020-15472-W  0.339
2020 Katzer DS, Hardy MT, Nepal N, Downey BP, Jin EN, Meyer DJ. Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 32204. DOI: 10.1116/6.0000063  0.387
2020 Storm DF, Growden TA, Cornuelle EM, Peri PR, Osadchy T, Daulton JW, Zhang W, Katzer DS, Hardy MT, Nepal N, Molnar R, Brown ER, Berger PR, Smith DJ, Meyer DJ. Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire Journal of Vacuum Science & Technology B. 38: 032214. DOI: 10.1116/6.0000052  0.417
2020 Jin EN, Lang AC, Hardy MT, Nepal N, Katzer DS, Storm DF, Downey BP, Meyer DJ. Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer Journal of Applied Physics. 127: 214104. DOI: 10.1063/5.0007144  0.392
2019 Ratchford DC, Winta CJ, Chatzakis I, Ellis CT, Passler NC, Winterstein J, Dev P, Razdolski I, Matson JR, Nolen JR, Tischler JG, Vurgaftman I, Katz MB, Nepal N, Hardy MT, et al. Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures. Acs Nano. PMID 31184132 DOI: 10.1021/Acsnano.9B01275  0.319
2019 Currie M, Wheeler VD, Downey B, Nepal N, Qadri SB, Wollmershauser JA, Avila J, Nyakiti L. Asymmetric hysteresis in vanadium dioxide thin films Optical Materials Express. 9: 3717-3728. DOI: 10.1364/Ome.9.003717  0.373
2019 Fares C, Tadjer MJ, Woodward J, Nepal N, Mastro MA, Eddy CR, Ren F, Pearton SJ. Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (−201) Bulk β-Ga2O3 Ecs Journal of Solid State Science and Technology. 8: Q3154-Q3158. DOI: 10.1149/2.0281907Jss  0.318
2019 Katzer DS, Nepal N, Hardy MT, Downey BP, Storm DF, Jin EN, Meyer DJ. RF-plasma MBE growth of epitaxial metallic TaNx transition metal nitride films on SiC Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 31211. DOI: 10.1116/1.5089779  0.374
2019 Woodward JM, Rosenberg SG, Kozen AC, Nepal N, Johnson SD, Wagenbach C, Rowley AH, Robinson ZR, Joress H, Ludwig KF, Eddy CR. Influence of temperature on atomic layer epitaxial growth of indium nitride assessed within situgrazing incidence small-angle x-ray scattering Journal of Vacuum Science & Technology A. 37: 030901. DOI: 10.1116/1.5081919  0.371
2019 Rosenberg SG, Wagenbach C, Anderson VR, Johnson SD, Nepal N, Kozen AC, Woodward JM, Robinson ZR, Munger M, Joress H, Ludwig KF, Eddy CR. In situ studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth Journal of Vacuum Science & Technology A. 37: 020928. DOI: 10.1116/1.5080380  0.307
2019 Rosenberg SG, Pennachio DJ, Wagenbach C, Johnson SD, Nepal N, Kozen AC, Woodward JM, Robinson Z, Joress H, Ludwig KF, Palmstrøm CJ, Eddy CR. Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations Journal of Vacuum Science & Technology A. 37: 020908. DOI: 10.1116/1.5080090  0.358
2019 Nepal N, Anderson VR, Johnson SD, Downey BP, Meyer DJ, Robinson ZR, Woodward JM, Ludwig KF, Eddy CR. Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering Journal of Vacuum Science & Technology A. 37: 020910. DOI: 10.1116/1.5063340  0.352
2019 Avila JR, Qadri SB, Freitas JA, Nepal N, Boris DR, Walton SG, Eddy CR, Wheeler VD. Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition Chemistry of Materials. 31: 3900-3908. DOI: 10.1021/Acs.Chemmater.8B05282  0.342
2018 Yan R, Khalsa G, Vishwanath S, Han Y, Wright J, Rouvimov S, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D. GaN/NbN epitaxial semiconductor/superconductor heterostructures. Nature. 555: 183-189. PMID 29516996 DOI: 10.1038/Nature25768  0.418
2018 Boris DR, Anderson VR, Nepal N, Johnson SD, Robinson ZR, Kozen AC, Eddy CR, Walton SG. Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy Journal of Vacuum Science & Technology A. 36: 051503. DOI: 10.1116/1.5034247  0.329
2017 Downey BP, Katzer DS, Nepal N, Hardy MT, Meyer DJ. XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices Journal of Vacuum Science and Technology. 35. DOI: 10.1116/1.4994400  0.364
2017 Anderson VR, Nepal N, Johnson SD, Robinson ZR, Nath A, Kozen AC, Qadri SB, DeMasi A, Hite JK, Ludwig KF, Eddy CR. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 031508. DOI: 10.1116/1.4979007  0.441
2017 Nepal N, Anderson VR, Johnson SD, Downey BP, Meyer DJ, DeMasi A, Robinson ZR, Ludwig KF, Eddy CR. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 031504. DOI: 10.1116/1.4978026  0.357
2017 Storm DF, Growden TA, Zhang W, Brown ER, Nepal N, Katzer DS, Hardy MT, Berger PR, Meyer DJ. AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B110. DOI: 10.1116/1.4977779  0.408
2017 Storm DF, McConkie TO, Hardy MT, Katzer DS, Nepal N, Meyer DJ, Smith DJ. Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 6. DOI: 10.1116/1.4977777  0.403
2017 Hardy MT, Downey BP, Meyer DJ, Nepal N, Storm DF, Katzer DS. Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN Ieee Transactions On Semiconductor Manufacturing. 30: 475-479. DOI: 10.1109/Tsm.2017.2749201  0.37
2017 Hardy MT, Downey BP, Nepal N, Storm DF, Katzer DS, Meyer DJ. Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates Applied Physics Letters. 110: 162104. DOI: 10.1063/1.4981807  0.447
2016 Hardy MT, Storm DF, Katzer DS, Downey BP, Nepal N, Meyer DJ. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors. Journal of Visualized Experiments : Jove. PMID 27911417 DOI: 10.3791/54775  0.414
2016 Nepal N, Scott Katzer D, Meyer DJ, Downey BP, Wheeler VD, Storm DF, Hardy MT. Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates Applied Physics Express. 9. DOI: 10.7567/Apex.9.021003  0.336
2016 Katzer DS, Nepal N, Meyer DJ, Downey BP, Wheeler V, Storm DF, Hardy MT. Metallic β-Nb 2 N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates Mrs Advances. 1: 127-132. DOI: 10.1557/Adv.2016.27  0.366
2016 Hite J, Nepal N, Anderson VR, Freitas JA, Mastro MA, Eddy CR. Atomic layer epitaxy for quantum well nitride-based devices Proceedings of Spie. 9755: 6. DOI: 10.1117/12.2209111  0.366
2016 Hardy MT, McConkie TO, Smith DJ, Storm DF, Downey BP, Katzer DS, Meyer DJ, Nepal N. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4940759  0.423
2016 Meyer DJ, Downey BP, Katzer DS, Nepal N, Wheeler VD, Hardy MT, Anderson TJ, Storm DF. Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates Ieee Transactions On Semiconductor Manufacturing. 29: 384-389. DOI: 10.1109/Tsm.2016.2599839  0.344
2016 Downey BP, Katzer DS, Nepal N, Meyer DJ, Storm DF, Wheeler VD, Hardy MT. Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy Electronics Letters. 52: 1263-1264. DOI: 10.1049/El.2016.0331  0.364
2016 McConkie TO, Hardy MT, Storm DF, Downey BP, Katzer DS, Meyer DJ, Nepal N, Smith DJ. Investigation of N-Polar AlGaN/GaN and InAlN/GaN Thin Films Grown by MBE Microscopy and Microanalysis. 22: 1570-1571. DOI: 10.1017/S1431927616008692  0.361
2016 Storm DF, Hardy MT, Katzer DS, Nepal N, Downey BP, Meyer DJ, McConkie TO, Zhou L, Smith DJ. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates Journal of Crystal Growth. 456: 121-132. DOI: 10.1016/J.Jcrysgro.2016.08.047  0.442
2015 Katzer DS, Nepal N, Meyer DJ, Downey BP, Wheeler VD, Storm DF, Hardy MT. Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.085501  0.349
2015 Hossain T, Wei D, Edgar JH, Garces NY, Nepal N, Hite JK, Mastro MA, Eddy CR, Meyer HM. Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931793  0.383
2015 Acharya AR, Thoms BD, Nepal N, Eddy CR. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4901873  0.304
2015 Nepal N, Anderson VR, Hite JK, Eddy CR. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures Thin Solid Films. 589: 47-51. DOI: 10.1016/J.Tsf.2015.04.068  0.423
2015 Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ. Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.045  0.385
2014 Katzer DS, Meyer DJ, Storm DF, Nepal N, Wheeler VD. Silicon nitride thin films deposited using electron-beam evaporation in an RF plasma MBE system Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4867435  0.345
2014 Nepal N, Goswami R, Qadri SB, Mahadik NA, Kub FJ, Eddy CR. Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy Scripta Materialia. 93: 44-47. DOI: 10.1016/J.Scriptamat.2014.08.027  0.373
2014 Wei D, Hossain T, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Edgar JH. Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 898-901. DOI: 10.1002/Pssc.201300677  0.312
2014 Hossain T, Wei D, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Baker T, Mayo A, Schmitt J, Edgar JH. Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 565-568. DOI: 10.1002/Pssc.201300659  0.344
2013 Nepal N, Wheeler VD, Anderson TJ, Kub FJ, Mastro MA, Myers-Ward RL, Qadri SB, Freitas JA, Hernandez SC, Nyakiti LO, Walton SG, Gaskill K, Eddy CR. Epitaxial growth of III-nitride/graphene heterostructures for electronic devices Applied Physics Express. 6. DOI: 10.7567/Apex.6.061003  0.434
2013 Mastro MA, Nepal N, Kub F, Hite JK, Kim J, Eddy CR. Nickel foam as a substrate for III-nitride nanowire growth Materials Research Society Symposium Proceedings. 1538: 311-316. DOI: 10.1557/Opl.2013.504  0.383
2013 Wei D, Hossain T, Garces NY, Nepal N, Meyer HM, Kirkham MJ, Eddy CR, Edgar JH. Influence of atomic layer deposition temperatures on TiO2/n-Si MOS capacitor Ecs Journal of Solid State Science and Technology. 2: N110-N114. DOI: 10.1149/2.010305Jss  0.364
2013 Eddy CR, Nepal N, Hite JK, Mastro MA. Perspectives on future directions in III-N semiconductor research Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4813687  0.317
2013 Koehler AD, Nepal N, Anderson TJ, Tadjer MJ, Hobart KD, Eddy CR, Kub FJ. Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation Ieee Electron Device Letters. 34: 1115-1117. DOI: 10.1109/Led.2013.2274429  0.383
2013 Nepal N, Qadri SB, Hite JK, Mahadik NA, Mastro MA, Eddy CR. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4818792  0.418
2013 Nepal N, Mahadik NA, Nyakiti LO, Qadri SB, Mehl MJ, Hite JK, Eddy CR. Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy Crystal Growth and Design. 13: 1485-1490. DOI: 10.1021/Cg3016172  0.407
2011 Nepal N, Garces NY, Meyer DJ, Hite JK, Mastro MA, Eddy CR. Assessment of GaN surface pretreatment for atomic layer deposited high-K dielectrics Applied Physics Express. 4. DOI: 10.1143/Apex.4.055802  0.368
2011 Kim BJ, Jung Y, Mastro MA, Hite J, Nepal N, Eddy CR, Kim J. Emission enhancement from nonpolar a-plane III-nitride nanopillar Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3545696  0.434
2011 Garces NY, Wheeler VD, Hite JK, Jernigan GG, Tedesco JL, Nepal N, Eddy CR, Gaskill DK. Epitaxial graphene surface preparation for atomic layer deposition of Al 2O 3 Journal of Applied Physics. 109. DOI: 10.1063/1.3596761  0.368
2011 Nepal N, Frajtag P, Zavada JM, El-Masry NA, Bedair SM. Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2354-2356. DOI: 10.1002/Pssc.201000983  0.319
2009 Nepal N, Zavada JM, Lee DS, Steckl AJ, Sedhain A, Lin JY, Jiang HX. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys Applied Physics Letters. 94. DOI: 10.1063/1.3097808  0.366
2009 Nakarmi ML, Nepal N, Lin JY, Jiang HX. Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys Applied Physics Letters. 94. DOI: 10.1063/1.3094754  0.701
2008 Nepal N, Zavada JM, Lee DS, Steckl AJ. Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation Applied Physics Letters. 93. DOI: 10.1063/1.2970993  0.34
2008 Sedhain A, Nepal N, Nakarmi ML, Al Tahtamouni TM, Lin JY, Jiang HX, Gu Z, Edgar JH. Photoluminescence properties of AlN homoepilayers with different orientations Applied Physics Letters. 93. DOI: 10.1063/1.2965613  0.757
2007 Pantha BN, Nepal N, Al Tahtamouni TM, Nakarmi ML, Li J, Lin JY, Jiang HX. Correlation between biaxial stress and free exciton transition in AlN epilayers Applied Physics Letters. 91. DOI: 10.1063/1.2789182  0.738
2007 Khan N, Nepal N, Sedhain A, Lin JY, Jiang HX. Mg acceptor level in InN epilayers probed by photoluminescence Applied Physics Letters. 91. DOI: 10.1063/1.2753537  0.663
2007 Pantha BN, Dahal R, Nakarmi ML, Nepal N, Li J, Lin JY, Jiang HX, Paduano QS, Weyburne D. Correlation between optoelectronic and structural properties and epilayer thickness of AlN Applied Physics Letters. 90. DOI: 10.1063/1.2747662  0.708
2007 Ugolini C, Nepal N, Lin JY, Jiang HX, Zavada JM. Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition Applied Physics Letters. 90. DOI: 10.1063/1.2450641  0.361
2006 Ugolini C, Nepal N, Lin JY, Jiang HX, Zavada JM. Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition Applied Physics Letters. 89. DOI: 10.1557/Proc-0955-I10-05  0.477
2006 Zavada JM, Nepal N, Lin J, Kim KH, Jiang HX, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Photoluminescence from Gd-implanted AlN and GaN epilayers Materials Research Society Symposium Proceedings. 955: 400-403. DOI: 10.1557/Proc-0955-I10-02  0.339
2006 tahtamouni TMAA, Nepal N, Lin J, Jiang H. Al rich AlN/AlGaN Quantum Wells Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I02-04  0.561
2006 Nepal N, Nakarmi ML, Lin JY, Jiang HX. Time-resolved photoluminescence studies of Mg-doped AlN epilayers Proceedings of Spie - the International Society For Optical Engineering. 6118. DOI: 10.1117/12.651856  0.692
2006 Nepal N, Nakarmi ML, Jang HU, Lin JY, Jiang HX. Growth and photoluminescence studies of Zn-doped AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2387869  0.719
2006 Nakarmi ML, Nepal N, Ugolini C, Altahtamouni TM, Lin JY, Jiang HX. Correlation between optical and electrical properties of Mg-doped AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2362582  0.715
2006 Al Tahtamouni TM, Nepal N, Lin JY, Jiang HX, Chow WW. Growth and photoluminescence studies of Al-rich AlN/Al xGa 1-xN quantum wells Applied Physics Letters. 89. DOI: 10.1063/1.2358107  0.759
2006 Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hömmerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. Ultraviolet photoluminescence from Gd-implanted AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2357552  0.404
2006 Nepal N, Nakarmi ML, Lin J, Jiang HX. Photoluminescence studies of impurity transitions in AlGaN alloys Applied Physics Letters. 89. DOI: 10.1063/1.2337856  0.67
2006 Nepal N, Nam KB, Li J, Nakarmi ML, Lin JY, Jiang HX. Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy Applied Physics Letters. 88. DOI: 10.1063/1.2217160  0.676
2006 Nepal N, Shakya J, Nakarmi ML, Lin JY, Jiang HX. Deep ultraviolet photoluminescence studies of AlN photonic crystals Applied Physics Letters. 88. DOI: 10.1063/1.2190452  0.688
2006 Nepal N, Li J, Nakarmi ML, Lin JY, Jiang HX. Exciton localization in AlGaN alloys Applied Physics Letters. 88. DOI: 10.1063/1.2172728  0.688
2006 Al Tantamount TM, Nepal N, Lin J, Jiang H. Al rich AlN/AlGaN quantum wells Materials Research Society Symposium Proceedings. 955: 13-18.  0.308
2005 Nepal N, Li J, Nakarmi ML, Lin JY, Jiang HX. Temperature and compositional dependence of the energy band gap of AlGaN alloys Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2142333  0.684
2005 Nakarmi ML, Nepal N, Lin JY, Jiang HX. Unintentionally doped n-type Al 0.67Ga 0.33N epilayers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1954875  0.689
2004 Nepal N, Nakarmi ML, Nam KB, Lin JY, Jiang HX. Acceptor-bound exciton transition in Mg-doped AIN epilayer Applied Physics Letters. 85: 2271-2273. DOI: 10.1063/1.1796521  0.707
2004 Nepal N, Nam KB, Nakarmi ML, Lin JY, Jiang HX, Zavada JM, Wilson RG. Optical properties of the nitrogen vacancy in AlN epilayers Applied Physics Letters. 84: 1090-1092. DOI: 10.1063/1.1648137  0.677
2004 Zavada JM, Jin SX, Nepal N, Lin JY, Jiang HX, Chow P, Hertog B. Electroluminescent properties of erbium-doped III-N light-emitting diodes Applied Physics Letters. 84: 1061-1063. DOI: 10.1063/1.1647271  0.419
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