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YouSeok Suh, Ph.D. - Publications

Affiliations: 
2003 North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Suh Y, Lazar H, Chen B, Lee J, Misra V. Electrical Characteristics of HfO[sub 2] Dielectrics with Ru Metal Gate Electrodes Journal of the Electrochemical Society. 152: F138. DOI: 10.1149/1.1992467  0.622
2005 Chen B, Suh Y, Lee J, Gurganus J, Misra V, Cabral C. Physical and electrical analysis of RuxYy alloys for gate electrode applications Applied Physics Letters. 86: 053502. DOI: 10.1063/1.1857093  0.666
2004 Suh Y, Heuss G, Misra V. Characteristics of TaSi[sub x]N[sub y] thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 175. DOI: 10.1116/1.1640398  0.621
2004 Suh Y, Park D, Jang S. Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films Thin Solid Films. 450: 341-345. DOI: 10.1016/J.Tsf.2003.11.165  0.38
2003 Suh Y, Heuss GP, Misra V, Park D, Lim K. Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2] Journal of the Electrochemical Society. 150: F79. DOI: 10.1149/1.1562599  0.56
2003 Suh Y, Heuss GP, Lee J, Misra V. Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes Ieee Electron Device Letters. 24: 439-441. DOI: 10.1109/Led.2003.814009  0.626
2002 Suh Y, Heuss G, Lee J, Misra V. The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B8.6  0.63
2002 Suh Y, Heuss GP, Misra V. Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis Applied Physics Letters. 80: 1403-1405. DOI: 10.1063/1.1453478  0.626
2001 Zhong H, Heuss G, Suh Y, Hong S, Misra V, Kelly J, Parsons G. Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics Mrs Proceedings. 670. DOI: 10.1557/Proc-670-K3.1  0.71
2001 Kim S, Hwang I, Rhee J, Suh Y, Park D. Effects of the Process Variable on Sputtered TiSi x Polycide Gate Electrodes for sub-0.15 μm Memory Device Application Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1360209  0.486
2001 Zhong H, Heuss G, Suh Y, Misra V, Hong S. Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics Journal of Electronic Materials. 30: 1493-1498. DOI: 10.1007/S11664-001-0164-2  0.725
2000 Suh Y, Park D, Jang S, Lee S, Kim T, Yeo I, Kim S, Kim C. Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films Journal of Applied Physics. 87: 2760-2764. DOI: 10.1063/1.372252  0.464
1999 Park D, Suh Y, Lee S, Kim S, Kim C. Thermal Stability of Sputter‐Deposited TiSi2 Films with Crystal Orientation Electrochemical and Solid State Letters. 2: 642-644. DOI: 10.1149/1.1390934  0.323
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