Zhaoxu Tian, Ph.D. - Publications
Affiliations: | 2006 | University of Central Florida, Orlando, FL, United States |
Area:
Materials Science EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2016 | Yao WG, Guan KM, Tian ZN, Xu JJ, Chen QD, Sun HB. Mode-selecting micrograting cavity laser Journal of Lightwave Technology. 34: 4142-4146. DOI: 10.1109/JLT.2016.2592101 | 0.408 | |||
2008 | Tian Z, Quick NR, Kar A. Laser endotaxy in silicon carbide and PIN diode fabrication Journal of Laser Applications. 20: 106-115. DOI: 10.2351/1.2831607 | 0.64 | |||
2006 | Tian Z, Quick NR, Kar A. Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes Materials Science Forum. 823-826. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.823 | 0.652 | |||
2006 | Tian Z, Quick NR, Kar A. Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B10-07 | 0.633 | |||
2006 | Tian Z, Quick NR, Kar A. Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide Acta Materialia. 54: 4273-4283. DOI: 10.1016/J.Actamat.2006.05.020 | 0.614 | |||
2005 | Mahaney TJ, Muravjov AV, Dolguikh MV, Winningham TA, Peale RE, Tian Z, Bet S, Kar A, Klimov M. Laser doping of germanium Proceedings of Spie - the International Society For Optical Engineering. 5713: 67-73. DOI: 10.1117/12.585470 | 0.616 | |||
2005 | Tian Z, Salama IA, Quick NR, Kar A. Effects of different laser sources and doping methods used to dope silicon carbide Acta Materialia. 53: 2835-2844. DOI: 10.1016/J.Actamat.2005.02.043 | 0.635 | |||
2005 | Tian Z, Quick NR, Kar A. Characteristics of 6H-Silicon Carbide PIN Diodes Prototyping by Laser Doping Journal of Electronic Materials. 34: 430-438. DOI: 10.1007/S11664-005-0123-4 | 0.623 | |||
2004 | Tian Z, Quick NR, Kar A. Laser Direct Write and Gas Immersion Laser Doping Fabrication of SiC Diodes Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J3.4 | 0.63 | |||
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