| Year |
Citation |
Score |
| 2020 |
Banihashemian SF, Grant JM, Sabbar A, Tran H, Olorunsola O, Ojo S, Amoah S, Mehboudi M, Yu S, Mosleh A, Naseem HA. Growth and characterization of low-temperature Si 1-x Sn x on Si using plasma enhanced chemical vapor deposition Optical Materials Express. 10: 2242-2253. DOI: 10.1364/Ome.398958 |
0.58 |
|
| 2020 |
Abu-Safe HH, Al-Esseili R, Sarollahi M, Refaei M, Naseem H, Zamani-Alavijeh M, AlAbdulaal T, Ware ME. Thermally-induced nonlinear optical properties of silver nano-films near surface plasmon resonance Optical Materials. 105: 109858. DOI: 10.1016/J.Optmat.2020.109858 |
0.451 |
|
| 2020 |
Sabbar A, Grant JM, Grant PC, Dou W, Alharthi B, Li B, Yurtsever F, Ghetmiri SA, Mortazavi M, Naseem HA, Yu S, Mosleh A, Chen Z. Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System Journal of Electronic Materials. 49: 4809-4815. DOI: 10.1007/S11664-020-08169-9 |
0.619 |
|
| 2020 |
Abu‐Safe HH, Al‐Esseili R, El‐Nasser H, Sarollahi M, Refaei M, Zamani‐Alavijeh M, Naseem H, Ware ME. Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime Crystal Research and Technology. 55: 1900228. DOI: 10.1002/Crat.201900228 |
0.385 |
|
| 2019 |
Grant PC, Dou W, Alharthi B, Grant JM, Tran H, Abernathy G, Mosleh A, Du W, Li B, Mortazavi M, Naseem HA, Yu S. UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices Optical Materials Express. 9: 3277-3291. DOI: 10.1364/Ome.9.003277 |
0.497 |
|
| 2019 |
Alharthi B, Dou W, Grant PC, Grant JM, Morgan T, Mosleh A, Du W, Li B, Mortazavi M, Naseem H, Yu S. Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications Applied Surface Science. 481: 246-254. DOI: 10.1016/J.Apsusc.2019.03.062 |
0.48 |
|
| 2018 |
Dou W, Alharthi B, Grant PC, Grant JM, Mosleh A, Tran H, Du W, Mortazavi M, Li B, Naseem H, Yu S. Crystalline GeSn growth by plasma enhanced chemical vapor deposition Optical Materials Express. 8: 3220-3229. DOI: 10.1364/Ome.8.003220 |
0.563 |
|
| 2018 |
Alharthi B, Grant JM, Dou W, Grant PC, Mosleh A, Du W, Mortazavi M, Li B, Naseem H, Yu S. Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement Journal of Electronic Materials. 47: 4561-4570. DOI: 10.1007/S11664-018-6315-5 |
0.538 |
|
| 2018 |
Alahmad H, Mosleh A, Alher M, Banihashemian SF, Ghetmiri SA, Al-Kabi S, Du W, Li B, Yu S, Naseem HA. GePb Alloy Growth Using Layer Inversion Method Journal of Electronic Materials. 47: 3733-3740. DOI: 10.1007/S11664-018-6233-6 |
0.613 |
|
| 2017 |
Ghetmiri SA, Zhou Y, Margetis J, Al-Kabi S, Dou W, Mosleh A, Du W, Kuchuk A, Liu J, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Mortazavi M, et al. Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics. Optics Letters. 42: 387-390. PMID 28146483 DOI: 10.1364/Ol.42.000387 |
0.331 |
|
| 2017 |
Alharthi B, Margetis J, Tran H, Al-kabi S, Dou W, Ghetmiri SA, Mosleh A, Tolle J, Du W, Mortazavi M, Li B, Naseem H, Yu S. Study of material and optical properties of Si_xGe_1-x-ySn_y alloys for Si-based optoelectronic device applications Optical Materials Express. 7: 3517. DOI: 10.1364/Ome.7.003517 |
0.55 |
|
| 2017 |
Al-Zoubi OH, Naseem H. Enhancing the Performance of the Microwave Absorbing Materials by Using Dielectric Resonator Arrays Modelling and Simulation in Engineering. 2017: 1-8. DOI: 10.1155/2017/3658247 |
0.308 |
|
| 2017 |
Du W, Ghetmiri S, Al-Kabi S, Mosleh A, Pham T, Zhou Y, Tran H, Sun G, Soref R, Margetis J, Tolle J, Li B, Mortazavi M, Naseem H, Yu S. Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications Proceedings of Spie. 10108: 1010813. DOI: 10.1117/12.2253067 |
0.414 |
|
| 2017 |
Grant PC, Dou W, Alharthi B, Grant JM, Mosleh A, Du W, Li B, Mortazavi M, Naseem HA, Yu S. Comparison study of the low temperature growth of dilute GeSn and Ge Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 61204. DOI: 10.1116/1.4990773 |
0.553 |
|
| 2017 |
Margetis J, Mosleh A, Al-Kabi S, Ghetmiri SA, Du W, Dou W, Benamara M, Li B, Mortazavi M, Naseem HA, Yu S-, Tolle J. Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas Journal of Crystal Growth. 463: 128-133. DOI: 10.1016/J.Jcrysgro.2017.01.041 |
0.404 |
|
| 2016 |
Pham T, Du W, Tran H, Margetis J, Tolle J, Sun G, Soref RA, Naseem HA, Li B, Yu SQ. Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection. Optics Express. 24: 4519-4531. PMID 29092279 DOI: 10.1364/Oe.24.004519 |
0.421 |
|
| 2016 |
Mosleh A, Alher M, Du W, Cousar LC, Ghetmiri SA, Al-Kabi S, Dou W, Grant PC, Sun G, Soref RA, Li B, Naseem HA, Yu SQ. SiyGe1-x-ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4936892 |
0.638 |
|
| 2016 |
Al-Kabi S, Ghetmiri SA, Margetis J, Pham T, Zhou Y, Dou W, Collier B, Quinde R, Du W, Mosleh A, Liu J, Sun G, Soref RA, Tolle J, Li B, ... ... Naseem HA, et al. An optically pumped 2.5 μm GeSn laser on Si operating at 110 K Applied Physics Letters. 109: 171105. DOI: 10.1063/1.4966141 |
0.356 |
|
| 2016 |
Zhou Y, Dou W, Du W, Pham T, Ghetmiri SA, Al-Kabi S, Mosleh A, Alher M, Margetis J, Tolle J, Sun G, Soref R, Li B, Mortazavi M, Naseem H, et al. Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Journal of Applied Physics. 120. DOI: 10.1063/1.4958337 |
0.386 |
|
| 2016 |
Tran H, Du W, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Margetis J, Tolle J, Li B, Naseem HA, Yu SQ. Systematic study of Ge1-xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics Journal of Applied Physics. 119. DOI: 10.1063/1.4943652 |
0.314 |
|
| 2016 |
Dou W, Ghetmiri SA, Al-Kabi S, Mosleh A, Zhou Y, Alharthi B, du W, Margetis J, Tolle J, Kuchuk A, Benamara M, Li B, Naseem HA, Mortazavi M, Yu SQ. Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications Journal of Electronic Materials. 1-8. DOI: 10.1007/S11664-016-5031-2 |
0.424 |
|
| 2016 |
Al-Kabi S, Ghetmiri SA, Margetis J, du W, Mosleh A, Dou W, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Naseem HA, Yu SQ. Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-5028-X |
0.529 |
|
| 2016 |
Mosleh A, Alher M, Cousar LC, du W, Ghetmiri SA, Al-Kabi S, Dou W, Grant PC, Sun G, Soref RA, Li B, Naseem HA, Yu SQ. Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing Journal of Electronic Materials. 1-8. DOI: 10.1007/S11664-016-4402-Z |
0.615 |
|
| 2015 |
Mosleh A, Alher MA, Cousar LC, Du W, Ghetmiri SA, Pham T, Grant JM, Sun G, Soref RA, Li B, Naseem HA, Yu S. Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System Frontiers in Materials. 2. DOI: 10.3389/Fmats.2015.00030 |
0.623 |
|
| 2015 |
Du W, Pham T, Margetis J, Tran H, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Yu SQ. Si based mid-infrared GeSn photo detectors and light emitters Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2187540 |
0.338 |
|
| 2015 |
Pham T, Du W, Margetis J, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Yu SQ. Temperature-dependent study of Si-based GeSn photoconductors Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2079580 |
0.344 |
|
| 2015 |
Yu SQ, Ghetmiri SA, Du W, Margetis J, Zhou Y, Mosleh A, Al-Kabi S, Nazzal A, Sun G, Soref RA, Tolle J, Li B, Naseem HA. Si based GeSn light emitter: Mid-infrared devices in Si photonics Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2077778 |
0.518 |
|
| 2015 |
Al-Kabi S, Ghetmiri SA, Margetis J, du W, Mosleh A, Alher M, Dou W, Grant JM, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Naseem HA, Yu SQ. Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12% Journal of Electronic Materials. 1-9. DOI: 10.1007/S11664-015-4283-6 |
0.398 |
|
| 2014 |
Conley BR, Mosleh A, Ghetmiri SA, Du W, Soref RA, Sun G, Margetis J, Tolle J, Naseem HA, Yu SQ. Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection. Optics Express. 22: 15639-52. PMID 24977823 DOI: 10.1364/Oe.22.015639 |
0.448 |
|
| 2014 |
Alzoubi OH, Abu-Safe H, Alshurman K, Naseem HA. Broadband Absorptance High Efficiency Silicon Nanowire Fractal Arrays for Photovoltaic Applications Mrs Proceedings. 1707. DOI: 10.1557/Opl.2014.678 |
0.377 |
|
| 2014 |
Ghetmiri SA, Du W, Conley BR, Mosleh A, Nazzal A, Sun G, Soref RA, Margetis J, Tolle J, Naseem HA, Yu SQ. Shortwave-infrared photoluminescence from Ge1-xSnx thin films on silicon Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4897917 |
0.576 |
|
| 2014 |
Conley BR, Margetis J, Du W, Tran H, Mosleh A, Ghetmiri SA, Tolle J, Sun G, Soref R, Li B, Naseem HA, Yu SQ. Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μ m long-wavelength cutoff Applied Physics Letters. 105. DOI: 10.1063/1.4903540 |
0.432 |
|
| 2014 |
Ghetmiri SA, Du W, Margetis J, Mosleh A, Cousar L, Conley BR, Domulevicz L, Nazzal A, Sun G, Soref RA, Tolle J, Li B, Naseem HA, Yu SQ. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence Applied Physics Letters. 105. DOI: 10.1063/1.4898597 |
0.548 |
|
| 2014 |
Du W, Ghetmiri SA, Conley BR, Mosleh A, Nazzal A, Soref RA, Sun G, Tolle J, Margetis J, Naseem HA, Yu SQ. Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx Applied Physics Letters. 105. DOI: 10.1063/1.4892302 |
0.427 |
|
| 2014 |
Du W, Zhou Y, Ghetmiri SA, Mosleh A, Conley BR, Nazzal A, Soref RA, Sun G, Tolle J, Margetis J, Naseem HA, Yu SQ. Room-temperature electroluminescence from Ge/Ge1-xSn x/Ge diodes on Si substrates Applied Physics Letters. 104. DOI: 10.1063/1.4884380 |
0.492 |
|
| 2014 |
Mosleh A, Ghetmiri SA, Conley BR, Hawkridge M, Benamara M, Nazzal A, Tolle J, Yu SQ, Naseem HA. Material characterization of Ge1-x Sn x alloys grown by a commercial CVD system for optoelectronic device applications Journal of Electronic Materials. 43: 938-946. DOI: 10.1007/S11664-014-3089-2 |
0.592 |
|
| 2010 |
Mohammed HK, Abu-Safe H, Newton B, El-Ghazaly S, Naseem HA. Fabrication of horizontally grown silicon nanowires using a thin aluminum film as a catalyst Thin Solid Films. 519: 1681-1686. DOI: 10.1016/J.Tsf.2010.08.155 |
0.606 |
|
| 2008 |
Kishore R, Sharma R, Hata S, Kuwano N, Tomokiyo Y, Naseem H, Brown WD. In-Situ Transmission Electron Microscopy Investigation of Aluminum Induced Crystallization of Amorphous Silicon Mrs Proceedings. 1066: 345-351. DOI: 10.1557/Proc-1066-A15-05 |
0.478 |
|
| 2008 |
Koirala SP, Abu-safe HH, Mensah SL, Naseem HA, Gordon MH. Langmuir probe and optical emission studies in a radio frequency (rf) magnetron plasma used for the deposition of hydrogenated amorphous silicon Surface and Coatings Technology. 203: 602-605. DOI: 10.1016/J.Surfcoat.2008.05.014 |
0.451 |
|
| 2007 |
Abu-Safe HH, Naseem HA, Brown WD. Fabrication of poly-silicon thin films on glass and flexible substrates using laser initiated metal induced crystallization of amorphous silicon Materials Research Society Symposium Proceedings. 910: 553-558. DOI: 10.1557/Proc-0910-A21-10 |
0.629 |
|
| 2007 |
Abu-Safe HH, Sajjadul-Islam AKM, Naseem HA, Brown WD. Analytical studies of the capping layer effect on aluminum induced crystallization of amorphous silicon Materials Research Society Symposium Proceedings. 910: 547-552. DOI: 10.1557/Proc-0910-A21-09 |
0.593 |
|
| 2007 |
Sharif K, Abu-Safe HH, Naseem HA, Brown WD, Al-Jassim M, Kishore R. Epitaxial silicon thin films by low temperature aluminum induced crystallization of amorphous silicon Materials Research Society Symposium Proceedings. 910: 517-522. DOI: 10.1557/Proc-0910-A21-04 |
0.732 |
|
| 2007 |
Hossain M, Meyer HM, Abu-Safe HH, Naseem HA, Brown WD. Corrigendum to "The effect of hydrogen in the mechanism of aluminium-induced crystallization of sputtered amorphous silicon using scanning auger microanalysis" [Thin Solid Films 510 (2006) 184-190] (DOI:10.1016/j.tsf.2006.01.003) Thin Solid Films. 516: 106. DOI: 10.1016/J.Tsf.2007.06.002 |
0.834 |
|
| 2007 |
Cai L, Zou M, Abu-Safe H, Naseem H, Brown W. Understanding the Effects of Stress on the Crystallization of Amorphous Silicon Journal of Electronic Materials. 36: 191-196. DOI: 10.1007/S11664-006-0012-5 |
0.607 |
|
| 2006 |
Hossain M, Abu-Safe HH, Naseem H, Brown WD. Effect of stress on the aluminum-induced crystallization of hydrogenated amorphous silicon films Journal of Materials Research. 21: 2582-2586. DOI: 10.1557/Jmr.2006.0318 |
0.836 |
|
| 2006 |
Hossain M, Meyer HM, Abu-Safe HH, Naseem H, Brown WD. Large-grain poly-crystalline silicon thin films prepared by aluminum-induced crystallization of sputter-deposited hydrogenated amorphous silicon Journal of Materials Research. 21: 761-766. DOI: 10.1557/Jmr.2006.0091 |
0.836 |
|
| 2006 |
Albarghouti M, Naseem H, Al-Jassim M. TEM investigation of the role of a nano-oxide layer in aluminum-induced crystallization of a-Si:H Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2197150 |
0.724 |
|
| 2006 |
Hosssain M, Meyer HM, Abu-Safe HH, Naseem HA, Brown WD. The effect of hydrogen in the mechanism of aluminum-induced crystallization of sputtered amorphous silicon using scanning Auger microanalysis Thin Solid Films. 510: 184-190. DOI: 10.1016/J.Tsf.2006.01.003 |
0.651 |
|
| 2006 |
Hossain M, Abu-Safe HH, Naseem H, Brown WD. Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering Journal of Non-Crystalline Solids. 352: 18-23. DOI: 10.1016/J.Jnoncrysol.2005.11.023 |
0.793 |
|
| 2006 |
Hossain M, Abu-Safe HH, Naseem H, Brown WD. The effects of hydrogen on aluminum-induced crystallization of sputtered hydrogenated amorphous silicon Journal of Electronic Materials. 35: 113-117. DOI: 10.1007/S11664-006-0192-Z |
0.846 |
|
| 2005 |
Kishore R, Hotz C, Naseem HA, Brown WD. Transmission electron microscopy and X-Ray diffraction analysis of aluminum-induced crystallization of amorphous silicon in alpha-Si:H/Al and Al/alpha-Si:H structures. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 11: 133-7. PMID 15817142 DOI: 10.1017/S1431927605050208 |
0.574 |
|
| 2005 |
Liu VH, Abu-Safe HH, Naseem HA, Brown WD. Fabrication of silicon nanowire network in aluminum thin films Materials Research Society Symposium Proceedings. 862: 363-368. DOI: 10.1557/Proc-862-A8.9 |
0.593 |
|
| 2005 |
Al-Barghouti M, Abu-Safe H, Naseem H, Brown WD, Al-Jassim M. The Effects of an Oxide Layer on the Kinetics of Metal-Induced Crystallization of a-Si:H Journal of the Electrochemical Society. 152. DOI: 10.1149/1.1878353 |
0.561 |
|
| 2005 |
Sidhwa A, Spinner C, Gandy T, Goulding M, Brown W, Naseem H, Ulrich R, Ang S, Charlton S, Prasad V, Cale T. Study of the step coverage and contact resistance by using two-step TiN barrier and evolve simulation Ieee Transactions On Semiconductor Manufacturing. 18: 163-173. DOI: 10.1109/Tsm.2004.840524 |
0.401 |
|
| 2004 |
Paduru SK, Abu-Safe HH, Naseem HA, Al-Shariah A, Brown WD. CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films Materials Research Society Symposium Proceedings. 808: 339-344. DOI: 10.1557/Proc-808-A4.5 |
0.545 |
|
| 2004 |
Abbasi MS, Abu-Safe H, Naseem H, Brown WD. Modeling of Aluminum Induced Lateral Crystallization of Hydrogenated Amorphous Silicon Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A4.26 |
0.483 |
|
| 2004 |
Hossain M, Abu-Safe H, Barghouti M, Naseem H, Brown WD. The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A4.22 |
0.799 |
|
| 2004 |
Abu-Safe HH, Hossain M, Naseem H, Brown W, Al-Dhafiri A. Chlorine-doped CdS thin films from CdCl2-mixed CdS powder Journal of Electronic Materials. 33: 128-134. DOI: 10.1007/S11664-004-0282-8 |
0.515 |
|
| 2003 |
Kishore R, Hotz C, Naseem HA, Brown WD. In situ X-ray diffraction studies of aluminium-induced crystallization of hydrogenated amorphous silicon Journal of Applied Crystallography. 36: 1236-1239. DOI: 10.1107/S0021889803014912 |
0.671 |
|
| 2002 |
Sidhwa A, Spinner C, Gandy T, Brown W, Ang S, Naseem H, Ulrich R. Evaluation of Contact and Via Step Coverage Using a Novel Two-Step Titanium Nitride Barrier Deposition Process Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B12.10 |
0.348 |
|
| 2002 |
Sidhwa A, Spinner C, Gandy T, Melosky S, Brown W, Ang S, Naseem H, Ulrich R. Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film Journal of Vacuum Science and Technology. 20: 934-940. DOI: 10.1116/1.1474417 |
0.513 |
|
| 2002 |
Al-Dhafiri A, El-Jammal H, Al-Shariah A, Naseem H, Brown W. Influence of nitrogen trifluoride and nitrogen plasma treatment on the formation of hillocks during aluminum induced crystallization of a-Si:H Thin Solid Films. 422: 14-19. DOI: 10.1016/S0040-6090(02)00993-8 |
0.653 |
|
| 2001 |
Kishore R, Hotz C, Naseem HA, Brown WD. Aluminum-Induced Crystallization of Amorphous Silicon (α-Si:H) at 150°C Electrochemical and Solid State Letters. 4. DOI: 10.1149/1.1342182 |
0.52 |
|
| 2000 |
Chen KY, Brown WD, Schaper LW, Ang SS, Naseem HA. A study of the high frequency performance of thin film capacitors for electronic packaging Ieee Transactions On Advanced Packaging. 23: 293-302. DOI: 10.1109/6040.846648 |
0.4 |
|
| 2000 |
Ulrich RK, Brown WD, Ang SS, Barlow FD, Elshabini A, Lenihan TG, Naseem HA, Nelms DM, Parkerson JP, Schaper LW, Morcan G. Getting aggressive with passive devices Ieee Circuits and Devices Magazine. 16: 17-25. DOI: 10.1109/101.876902 |
0.394 |
|
| 2000 |
Railkar TA, Kang WP, Windischmann H, Malshe AP, Naseem HA, Davidson JL, Brown WD. A Critical Review of Chemical Vapor-Deposited (CVD) Diamond for Electronic Applications Critical Reviews in Solid State and Materials Sciences. 25: 163-277. DOI: 10.1080/10408430008951119 |
0.338 |
|
| 1999 |
Ollison CD, Brown WD, Malshe AP, Naseem HA, Ang SS. A comparison of mechanical lapping versus chemical-assisted mechanical polishing and planarization of chemical vapor deposited (CVD) diamond Diamond and Related Materials. 8: 1083-1090. DOI: 10.1016/S0925-9635(99)00091-6 |
0.339 |
|
| 1999 |
Malshe AP, Park BS, Brown WD, Naseem HA. A review of techniques for polishing and planarizing chemically vapor-deposited (CVD) diamond films and substrates Diamond and Related Materials. 8: 1198-1213. DOI: 10.1016/S0925-9635(99)00088-6 |
0.453 |
|
| 1998 |
Haque MS, Naseem HA, Shultz JL, Brown WD, Lal S, Gangopadhyay S. Comparison of infrared, Raman, photoluminescence, and x-ray photoelectron spectroscopy for characterizing arc-jet-deposited diamond films Journal of Applied Physics. 83: 4421-4429. DOI: 10.1063/1.367201 |
0.506 |
|
| 1998 |
Taher MA, Schmidt WF, Naseem HA, Brown WD, Malshe AP, Nasrazadani S. Effect of methane concentration on physical properties of diamond-coated cemented carbide tool inserts obtained by hot-filament chemical vapour deposition Journal of Materials Science. 33: 173-182. DOI: 10.1023/A:1004366217800 |
0.392 |
|
| 1997 |
Haque MS, Naseem HA, Brown WD. The Effects of Moisture on Strain Relief of Si‒O Bonds in Plasma‐Enhanced Chemical Vapor Deposited Silicon Dioxide Films Journal of the Electrochemical Society. 144: 3265-3270. DOI: 10.1149/1.1837995 |
0.616 |
|
| 1997 |
Liu S, Gangopadhyay S, Sreenivas G, Ang SS, Naseem HA. Infrared studies of hydrogenated amorphous carbon (a-C:H) and its alloys (a-C:H,N,F) Physical Review B - Condensed Matter and Materials Physics. 55: 13020-13024. DOI: 10.1103/Physrevb.55.13020 |
0.308 |
|
| 1997 |
Haque MS, Naseem HA, Brown WD. Correlation of stress behavior with hydrogen-related impurities in plasma-enhanced chemical vapor deposited silicon dioxide films Journal of Applied Physics. 82: 2922-2932. DOI: 10.1063/1.366126 |
0.601 |
|
| 1997 |
Haque MS, Naseem HA, Brown WD. Residual stress behavior of thin plasma-enhanced chemical vapor deposited silicon dioxide films as a function of storage time Journal of Applied Physics. 81: 3129-3133. DOI: 10.1063/1.364347 |
0.546 |
|
| 1997 |
Lal S, Liu S, Gangopadhyay S, Haque MS, Naseem HA. Effect of diamond film quality on tungsten related photoluminescence peaks Applied Physics Letters. 71: 3640-3642. DOI: 10.1063/1.120466 |
0.48 |
|
| 1997 |
Malshe AP, Beera RA, Khanolkar AA, Brown WD, Naseem HA. Initial results of a novel pre-deposition seeding technique for achieving an ultra-high nucleation density for CVD diamond growth Diamond and Related Materials. 6: 430-434. DOI: 10.1016/S0925-9635(96)00735-2 |
0.511 |
|
| 1997 |
Haque MS, Naseem HA, Malshe AP, Brown WD. A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X‐Ray Diffraction Chemical Vapor Deposition. 3: 129-135. DOI: 10.1002/Cvde.19970030304 |
0.54 |
|
| 1996 |
Haque MS, Naseem HA, Brown WD. Aluminum‐induced crystallization and counter‐doping of phosphorous‐doped hydrogenated amorphous silicon at low temperatures Journal of Applied Physics. 79: 7529-7536. DOI: 10.1063/1.362425 |
0.623 |
|
| 1995 |
Moffitt PR, Naseem HA, Ang SS, Brown WD. Study of the Microstructure of Amorphous Germanium Alloys Using AFM and SAXS Mrs Proceedings. 377: 197. DOI: 10.1557/Proc-377-197 |
0.322 |
|
| 1995 |
Haque MS, Naseem HA, Brown WD. Characterization of High Rate Deposited PECVD Silicon Dioxide Films for MCM Applications Journal of the Electrochemical Society. 142: 3864-3869. DOI: 10.1149/1.2048425 |
0.641 |
|
| 1995 |
Bhat D, Johnson D, Malshe A, Naseem H, Brown W, Schaper L, Shen C. A preliminary investigation of the effect of post-deposition polishing of diamond films on the machining behavior of diamond-coated cutting tools Diamond and Related Materials. 4: 921-929. DOI: 10.1016/0925-9635(94)00251-7 |
0.306 |
|
| 1995 |
Conte DA, Brown WD, Ang SS, Naseem HA. Normal metal, ohmic contacts to high-temperature superconducting YBa2Cu3O7-δ thin films suitable for multichip modules Thin Solid Films. 270: 493-497. DOI: 10.1016/0040-6090(95)06719-1 |
0.392 |
|
| 1994 |
Moffitt PR, Naseem HA, Ang SS, Brown WD. Growth of germanium carbon alloy by pecvd using silane as a growth promoter Materials Research Society Symposium Proceedings. 336: 601-606. DOI: 10.1557/Proc-336-601 |
0.492 |
|
| 1994 |
Cooksey JW, Brown WD, Ang SS, Naseem HA, Ulrich RK, West L. Gamma-ray and Fast Neutron Radiation Effects on Thin Film Superconductors Ieee Transactions On Nuclear Science. 41: 2521-2524. DOI: 10.1109/23.340610 |
0.46 |
|
| 1994 |
Shen JM, Palsule C, Gangopadhyay S, Naseem HA, Kizzar S, Goh FHC. Characterization of fluorinated hydrogenated amorphous silicon nitride (a‐SiNx:H) alloys Journal of Applied Physics. 76: 1055-1061. DOI: 10.1063/1.357823 |
0.367 |
|
| 1994 |
Haque MS, Naseem HA, Brown WD. Interaction Of Aluminum With Hydrogenated Amorphous Silicon At Low Temperatures Journal of Applied Physics. 75: 3928-3935. DOI: 10.1063/1.356039 |
0.456 |
|
| 1994 |
Meyyappan I, Malshe AP, Naseem HA, Brown WD. Au/(TiW) and Au/Cr metallization of chemically vapor-deposited diamond substrates for multichip module applications Thin Solid Films. 253: 407-412. DOI: 10.1016/0040-6090(94)90357-3 |
0.412 |
|
| 1993 |
Sidhwa AJ, Goh FC, Naseem HA, Brown WD. Reactive ion etching of crystalline silicon using NF3 diluted with H2 Journal of Vacuum Science and Technology. 11: 1156-1160. DOI: 10.1116/1.578458 |
0.447 |
|
| 1993 |
Ang SS, Sreenivas G, Brown WD, Naseem HA, Ulrich RK. Effects of nitrogen trifluoride on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like carbon films Journal of Electronic Materials. 22: 347-352. DOI: 10.1007/Bf02661661 |
0.569 |
|
| 1992 |
Palsule C, Gangopadhyay S, Yi S, Shen JM, Naseem HA, Kizzar S, Goh FHC. Fast Photoluminescence Decay in a-SiN x :H Films Mrs Proceedings. 284: 83. DOI: 10.1557/Proc-284-83 |
0.477 |
|
| 1991 |
Goh HC, Tan SM, Naseem HA, Ang SS, Brown WD. Wide Bandgap Fluorinated Silicon-Carbide-Nitride Films Using NF 3 Mrs Proceedings. 219: 763. DOI: 10.1557/Proc-219-763 |
0.576 |
|
| 1991 |
Khan I, Naseem HA, Ang SS, Brown WD. Deposition of Fluorinated Silicon Nitride using Plasma Enhanced Chemical Vapor Deposition Technique Mrs Proceedings. 219. DOI: 10.1557/Proc-219-757 |
0.538 |
|
| 1991 |
Ranade RM, Ang SS, Brown WD, Naseem HA, Yeargan JR, Ulrich RK. Semi-insulating polysilicon heterojunctions on silicon Microelectronics Journal. 22: 47-58. DOI: 10.1016/0026-2692(91)90013-D |
0.43 |
|
| 1991 |
Ong PH, Ang SS, Brown WD, Naseem HA, Ulrich RK, Dressendorfer PV. Arsenic-implanted thin film PECVD semi-insulating polysilicon (SIPOS) resistors Journal of Electronic Materials. 20: 211-215. DOI: 10.1007/Bf02653326 |
0.482 |
|
| 1990 |
Goh FHC, Tan SM, Ng K, Naseem HA, Brown WD, Hermann AM. Fluorinated Silicon Nitride (a-Si:N,F,H) Films Using NF3 for Amorphous Silicon Based Solar Cells Mrs Proceedings. 192. DOI: 10.1557/Proc-192-75 |
0.557 |
|
| 1990 |
Lai WC, Ang SS, Brown WD, Naseem HA, Ulrich RK, Dressendorfer PV. Growth and characterization of PECVD semi-insulating polysilicon films and resistors Journal of Electronic Materials. 19: 419-423. DOI: 10.1007/Bf02658000 |
0.61 |
|
| 1988 |
Khaliq MA, Shams QA, Brown WD, Naseem HA. Memory characteristics of MNOS capacitors fabricated with PECVD silicon nitride Solid-State Electronics. 31: 1229-1233. DOI: 10.1016/0038-1101(88)90419-4 |
0.446 |
|
| 1988 |
Khaliq MA, Shams QA, Brown WD, Naseem HA. Physical properties of memory quality PECVD silicon nitride Journal of Electronic Materials. 17: 355-359. DOI: 10.1007/Bf02652118 |
0.581 |
|
| 1985 |
Chu TL, Chu SS, Firszt F, Naseem HA, Stawski R. Deposition and characterization of p-type cadmium telluride films Journal of Applied Physics. 58: 1349-1355. DOI: 10.1063/1.336106 |
0.547 |
|
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