| Year |
Citation |
Score |
| 2020 |
Hatipoglu I, Mukhopadhyay P, Alema F, Sakthivel TS, Seal S, Osinsky A, Schoenfeld WV. Tuning the responsivity of monoclinic $({In}_x{Ga}_{1-x})_2{O}_3$ solar-blind photodetectors grown by metal organic chemical vapor deposition Journal of Physics D. 53: 454001. DOI: 10.1088/1361-6463/Aba313 |
0.328 |
|
| 2020 |
Alema F, Zhang Y, Mauze A, Itoh T, Speck JS, Hertog B, Osinsky A. H2O vapor assisted growth of β-Ga2O3 by MOCVD Aip Advances. 10: 85002. DOI: 10.1063/5.0011910 |
0.52 |
|
| 2020 |
Alema F, Zhang Y, Osinsky A, Orishchin N, Valente N, Mauze A, Speck JS. Low 1014 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD Apl Materials. 8: 21110. DOI: 10.1063/1.5132752 |
0.478 |
|
| 2019 |
Zhang Y, Mauze A, Alema F, Osinsky A, Speck JS. Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3 Applied Physics Express. 12: 44005. DOI: 10.7567/1882-0786/Ab08Ad |
0.34 |
|
| 2019 |
Alema F, Zhang Y, Osinsky A, Valente N, Mauze A, Itoh T, Speck JS. Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 Apl Materials. 7: 121110. DOI: 10.1063/1.5132954 |
0.453 |
|
| 2019 |
Alema F, Hertog B, Mukhopadhyay P, Zhang Y, Mauze A, Osinsky A, Schoenfeld WV, Speck JS, Vogt T. Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film Apl Materials. 7: 022527. DOI: 10.1063/1.5064471 |
0.337 |
|
| 2019 |
Zhang Y, Alema F, Mauze A, Koksaldi OS, Miller R, Osinsky A, Speck JS. MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Apl Materials. 7: 22506. DOI: 10.1063/1.5058059 |
0.447 |
|
| 2019 |
Alema F, Osinsky A, Mukhopadhyay P, Schoenfeld WV. Epitaxial growth of Co3O4 thin films using Co(dpm)3 by MOCVD Journal of Crystal Growth. 525: 125207. DOI: 10.1016/J.Jcrysgro.2019.125207 |
0.521 |
|
| 2018 |
Miller R, Alema F, Osinsky A. Epitaxial $\beta$ -Ga 2 O 3 and $\beta$ -(Al x Ga 1−x ) 2 O 3 / $\beta$ -Ga 2 O 3 Heterostructures Growth for Power Electronics Ieee Transactions On Semiconductor Manufacturing. 31: 467-474. DOI: 10.1109/Tsm.2018.2873488 |
0.364 |
|
| 2017 |
Alema F, Hertog B, Osinsky AV, Mukhopadhyay P, Toporkov M, Schoenfeld WV, Ahmadi E, Speck J. Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film Proceedings of Spie. 10105. DOI: 10.1117/12.2260824 |
0.451 |
|
| 2017 |
Toporkov M, Mukhopadhyay P, Ali H, Beletsky V, Alema F, Osinsky A, Schoenfeld WV. MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors Proceedings of Spie. 10105. DOI: 10.1117/12.2254937 |
0.373 |
|
| 2017 |
Alema F, Hertog B, Osinsky A, Mukhopadhyay P, Toporkov M, Schoenfeld WV. Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD Journal of Crystal Growth. 475: 77-82. DOI: 10.1016/J.Jcrysgro.2017.06.001 |
0.471 |
|
| 2017 |
Alema F, Hertog B, Ledyaev O, Volovik D, Thoma G, Miller R, Osinsky A, Mukhopadhyay P, Bakhshi S, Ali H, Schoenfeld WV. Solar blind photodetector based on epitaxial zinc doped Ga2
O3
thin film (Phys. Status Solidi A 5∕2017) Physica Status Solidi (a). 214: 1770127. DOI: 10.1002/Pssa.201770127 |
0.499 |
|
| 2017 |
Alema F, Hertog B, Ledyaev O, Volovik D, Thoma G, Miller R, Osinsky A, Mukhopadhyay P, Bakhshi S, Ali H, Schoenfeld WV. Solar blind photodetector based on epitaxial zinc doped Ga2
O3
thin film Physica Status Solidi (a). 214: 1600688. DOI: 10.1002/Pssa.201600688 |
0.504 |
|
| 2016 |
Alema F, Hertog B, Ledyaev O, Miller R, Osinsky A, Schoenfeld WV. Temperature and pulse duration effects on the growth of MgZnO via pulsed metal organic chemical vapor deposition Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.035501 |
0.474 |
|
| 2016 |
Alema F, Ledyaev O, Miller R, Beletsky V, Osinsky A, Schoenfeld WV. Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for Growth of
Single Phase Wurtzite MgxZn1-xO Epitaxial Film with High
Mg Content (x=0.51) Mrs Advances. 1: 299-304. DOI: 10.1557/Adv.2016.97 |
0.526 |
|
| 2016 |
Alema F, Ledyaev O, Miller R, Beletsky V, Hertog B, Osinsky A, Schoenfeld WV. High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD) Proceedings of Spie. 9749. DOI: 10.1117/12.2217139 |
0.568 |
|
| 2016 |
Alema F, Hertog B, Ledyaev O, Volovik D, Miller R, Osinsky A, Bakhshi S, Schoenfeld WV. High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition Sensors and Actuators, a: Physical. 249: 263-268. DOI: 10.1016/J.Sna.2016.08.036 |
0.444 |
|
| 2016 |
Alema F, Ledyaev O, Miller R, Beletsky V, Osinsky A, Schoenfeld WV. Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition Journal of Crystal Growth. 435: 6-11. DOI: 10.1016/J.Jcrysgro.2015.11.012 |
0.563 |
|
| 2015 |
Alema F, Pokhodnya K. Dielectric Properties of BaMg1/3Nb2/3O3 doped Ba0.45Sr0.55TiO3 Thin Films for Tunable Microwave Applications Journal of Advanced Dielectrics. 5: 1550030. DOI: 10.1142/S2010135X15500307 |
0.714 |
|
| 2015 |
Olson CS, Gangopadhyay S, Hoang K, Alema F, Kilina S, Pokhodnya K. Magnetic Exchange in MnII[TCNE] (TCNE = Tetracyanoethylene) Molecule-Based Magnets with Two- and Three-Dimensional Magnetic Networks The Journal of Physical Chemistry C. 119: 25036-25046. DOI: 10.1021/Acs.Jpcc.5B06313 |
0.648 |
|
| 2013 |
Olson CS, Heth CL, Alema FL, Lapidus SH, Stephens PW, Pokhodnya KI. Magnetic transitions and spin-glass reentrance in two-dimensional [MnII(TCNE)(NCMe)2]X (X = PF6,AsF6,SbF6) molecular magnets. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 256004. PMID 23732951 DOI: 10.1088/0953-8984/25/25/256004 |
0.648 |
|
| 2013 |
Alema F, Reinholz A, Pokhodnya K. Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices Journal of Applied Physics. 114: 174104. DOI: 10.1063/1.4829000 |
0.706 |
|
| 2013 |
Alema F, Reich M, Reinholz A, Pokhodnya K. Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films Journal of Applied Physics. 114: 84102. DOI: 10.1063/1.4819173 |
0.709 |
|
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