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Jing Lu - Publications

Affiliations: 
2014 University of California, Santa Barbara, Santa Barbara, CA, United States 
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Li Q, Fang S, Liu S, Xu L, Xu L, Yang C, Yang J, Shi B, Ma J, Yang J, Quhe R, Lu J. Performance Limit of Ultrathin GaAs Transistors. Acs Applied Materials & Interfaces. PMID 35575689 DOI: 10.1021/acsami.2c01134  0.335
2018 Wang Y, Fei R, Quhe R, Li J, Zhang H, Zhang X, Shi B, Xiao L, Song Z, Yang J, Shi JJ, Pan F, Lu J. Many-body Effect and Device Performance Limit of Monolayer InSe. Acs Applied Materials & Interfaces. PMID 29916240 DOI: 10.1021/Acsami.8B06427  0.315
2018 Lal S, Lu J, Thibeault BJ, Wong MH, DenBaars SP, Mishra UK. Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization Ieee Transactions On Electron Devices. 65: 1079-1086. DOI: 10.1109/Ted.2018.2797046  0.704
2017 Wan Y, Xiao J, Li J, Fang X, Zhang K, Fu L, Li P, Song Z, Zhang H, Wang Y, Zhao M, Lu J, Tang N, Ran G, Zhang X, et al. Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity. Advanced Materials (Deerfield Beach, Fla.). PMID 29265489 DOI: 10.1002/Adma.201703888  0.336
2015 Li H, Keller S, Chan SH, Lu J, Denbaars SP, Mishra UK. Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055015  0.832
2015 Yeluri R, Lu J, Hurni CA, Browne DA, Chowdhury S, Keller S, Speck JS, Mishra UK. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106. DOI: 10.1063/1.4919866  0.829
2014 Li W, Yang C, Lu J, Huang P, Barnstable CJ, Zhang C, Zhang SS. Tetrandrine protects mouse retinal ganglion cells from ischemic injury. Drug Design, Development and Therapy. 8: 327-39. PMID 24711693 DOI: 10.2147/Dddt.S55407  0.485
2014 Gupta G, Laurent M, Lu J, Keller S, Mishra UK. Design of polarization-dipole-induced isotype heterojunction diodes for use in III-N hot electron transistors Applied Physics Express. 7. DOI: 10.7567/Apex.7.014102  0.817
2014 Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001  0.808
2014 Yeluri R, Liu X, Guidry M, Koksaldi OS, Lal S, Kim J, Lu J, Keller S, Mishra UK. Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN Applied Physics Letters. 105. DOI: 10.1063/1.4903344  0.753
2014 Lu J, Zheng X, Guidry M, Denninghoff D, Ahmadi E, Lal S, Keller S, Denbaars SP, Mishra UK. Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors Applied Physics Letters. 104. DOI: 10.1063/1.4867508  0.798
2013 Dasgupta S, Lu J, Nidhi, Raman A, Hurni C, Gupta G, Speck JS, Mishra UK. Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6. DOI: 10.7567/Apex.6.034002  0.771
2013 Lal S, Lu J, Gupta G, Thibeault BJ, Denbaars SP, Mishra UK. Impact of gate-aperture overlap on the channel-pinch off in ingaas/ingan-based bonded aperture vertical electron transistor Ieee Electron Device Letters. 34: 1500-1502. DOI: 10.1109/Led.2013.2286954  0.806
2013 Kim J, Toledo NG, Lal S, Lu J, Buehl TE, Mishra UK. Wafer-bonded p-n heterojunction of GaAs and chemomechanically polished N-polar GaN Ieee Electron Device Letters. 34: 42-44. DOI: 10.1109/Led.2012.2225137  0.802
2013 Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009  0.777
2013 Liu X, Kim J, Yeluri R, Lal S, Li H, Lu J, Keller S, Mazumder B, Speck JS, Mishra UK. Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 114. DOI: 10.1063/1.4827201  0.806
2013 Yeluri R, Liu X, Swenson BL, Lu J, Keller S, Mishra UK. Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. 114. DOI: 10.1063/1.4819402  0.802
2013 Liu X, Yeluri R, Kim J, Lal S, Raman A, Lund C, Wienecke S, Lu J, Laurent M, Keller S, Mishra UK. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 103. DOI: 10.1063/1.4817385  0.757
2013 Lu J, Denninghoff D, Yeluri R, Lal S, Gupta G, Laurent M, Keller S, Denbaars SP, Mishra UK. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4809997  0.769
2013 Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980  0.612
2013 Mazumder B, Kaun SW, Lu J, Keller S, Mishra UK, Speck JS. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4798249  0.598
2013 Liu X, Yeluri R, Lu J, Mishra UK. Effects of H2O pretreatment on the capacitance-voltage characteristics of atomic-layer-deposited Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Journal of Electronic Materials. 42: 33-39. DOI: 10.1007/S11664-012-2246-8  0.796
2012 Lu J, Hu YL, Brown DF, Wu F, Keller S, Speck JS, DenBaars SP, Mishra UK. Charge and mobility enhancements in in-polar InAl(Ga)N/Al(Ga)N/GaN heterojunctions grown by metal-organic chemical vapor deposition using a graded growth strategy Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.115502  0.652
2012 Wong MH, Singisetti U, Lu J, Speck JS, Mishra UK. Anomalous output conductance in N-polar GaN high electron mobility transistors Ieee Transactions On Electron Devices. 59: 2988-2995. DOI: 10.1109/Ted.2012.2211599  0.684
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Scaled self-aligned N-Polar GaN/AlGaN MIS-HEMTs with f T of 275 GHz Ieee Electron Device Letters. 33: 961-963. DOI: 10.1109/Led.2012.2194130  0.709
2012 Denninghoff DJ, Dasgupta S, Lu J, Keller S, Mishra UK. Design of high-aspect-ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High f max Ieee Electron Device Letters. 33: 785-787. DOI: 10.1109/Led.2012.2191134  0.807
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Self-aligned N-Polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm Ieee Electron Device Letters. 33: 794-796. DOI: 10.1109/Led.2012.2190965  0.687
2012 Lal S, Snow E, Lu J, Swenson B, Keller S, Denbaars SP, Mishra UK. InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864. DOI: 10.1007/S11664-012-1977-X  0.81
2012 Keller S, Lu J, Mishra UK, Denbaars SP, Speck JS. Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica Physica Status Solidi (a) Applications and Materials Science. 209: 431-433. DOI: 10.1002/Pssa.201100349  0.592
2011 Chowdhury S, Swenson BL, Lu J, Mishra UK. Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.101002  0.775
2011 Fujiwara T, Yeluri R, Denninghoff D, Lu J, Keller S, Speck JS, DenBaars SP, Mishra UK. Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with +3 v of threshold voltage using Al2O3 deposited by atomic layer deposition Applied Physics Express. 4. DOI: 10.1143/Apex.4.096501  0.807
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