Robert Rodriguez, Ph.D.
Affiliations: | Cornell University, Ithaca, NY, United States |
Area:
materials, claysGoogle:
"Robert Rodriguez"Cross-listing: Materials Tree
Parents
Sign in to add mentor| Emmanuel P. Giannelis | grad student | 2010 | Cornell | |
| (Nanoscale ionic materials: Synthesis and properties.) | ||||
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Publications
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| Jespersen ML, Mirau PA, Von Meerwall E, et al. (2011) NMR characterization of canopy dynamics in nanoscale ionic materials Acs Symposium Series. 1077: 149-160 |
| Fernandes N, Dallas P, Rodriguez R, et al. (2010) Fullerol ionic fluids. Nanoscale. 2: 1653-6 |
| Jespersen ML, Mirau PA, von Meerwall E, et al. (2010) Canopy dynamics in nanoscale ionic materials. Acs Nano. 4: 3735-42 |
| Zheng Y, Zhang J, Lan L, et al. (2010) Preparation of solvent-free gold nanofluids with facile self-assembly technique. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 11: 61-4 |
| Bae WJ, Trikeriotis M, Sha J, et al. (2010) High refractive index and high transparency HfO2 nanocomposites for next generation lithography Journal of Materials Chemistry. 20: 5186-5189 |
| Fang J, Kelarakis A, Estevez L, et al. (2010) Superhydrophilic and solvent resistant coatings on polypropylene fabrics by a simple deposition process Journal of Materials Chemistry. 20: 1651-1653 |
| Rodriguez R, Herrer R, Bourlinos AB, et al. (2010) The synthesis and properties of nanoscale ionic materials Applied Organometallic Chemistry. 24: 581-589 |
| Trikeriotis M, Rodriguez R, Zettel MF, et al. (2009) High-refractive index nanoparticle fluids for 193-nm immersion lithography Proceedings of Spie - the International Society For Optical Engineering. 7273 |
| Bae WJ, Trikeriotis M, Rodriguez R, et al. (2009) High index nanocomposite photoresist for 193 nm lithography Proceedings of Spie - the International Society For Optical Engineering. 7273 |
| Zimmerman PA, Rice B, Rodriguez R, et al. (2008) The use of nanocomposite materials for high refractive index immersion lithography Journal of Photopolymer Science and Technology. 21: 621-629 |