Maribeth S. Mason, Ph.D.
Affiliations: | 2004 | California Institute of Technology, Pasadena, CA |
Area:
photovoltaicsGoogle:
"Maribeth Mason"Parents
Sign in to add mentorHarry A. Atwater | grad student | 2004 | Caltech | |
(Synthesis of large -grained polycrystalline silicon by hot -wire chemical vapor deposition for thin film photovoltaic applications.) |
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Publications
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Richardson CE, Mason MS, Atwater HA. (2006) Hot-wire CVD-grown epitaxial Si films on Si (100) substrates and a model of epitaxial breakdown Thin Solid Films. 501: 332-334 |
Mason MS, Richardson CE, Atwater HA, et al. (2006) Microsecond minority carrier lifetimes in HWCVD-grown films and implications for thin film solar cells Thin Solid Films. 501: 288-290 |
Richardson CE, Mason MS, Atwater HA. (2005) A phase diagram for morphology and properties of low temperature deposited polycrystalline silicon grown by hot-wire chemical vapor deposition Conference Record of the Ieee Photovoltaic Specialists Conference. 951-954 |
Richardson CE, Mason MS, Atwater HA. (2005) A phase diagram for morphology and properties of low temperature deposited polycrystalline silicon grown by hot-wire chemical vapor deposition Conference Record of the Ieee Photovoltaic Specialists Conference. 951-954 |
Richardson CE, Mason MS, Atwater HA. (2004) A Phase Diagram for Morphology and Properties of Low Temperature Deposited Polycrystalline Silicon Grown by Hot-wire Chemical Vapor Deposition Mrs Proceedings. 808 |
Mason MS, Holt JK, Atwater HA. (2004) Quantitative modelling of nucleation kinetics in experiments for poly-Si growth on SiO2 by hot wire chemical vapor deposition Thin Solid Films. 458: 67-70 |
Mason MS, Chen CM, Atwater HA. (2003) Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth on Large-Grained Polycrystalline Silicon Templates Materials Research Society Symposium - Proceedings. 762: 551-556 |
Mason MS, Chen C, Atwater H. (2003) Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates Mrs Proceedings. 762 |