Vladimir V. Protasenko, Ph.D.
Affiliations: | 2008 | University of Notre Dame, Notre Dame, IN, United States |
Area:
nanoscale materialsGoogle:
"Vladimir Protasenko"Parents
Sign in to add mentor| Masaru K. Kuno | grad student | 2008 | Notre Dame | |
| (Electro-optical properties of cadmium selenide nanowires.) | ||||
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Publications
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| Encomendero J, Protasenko V, Rana F, et al. (2020) Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics Physical Review Applied. 13 |
| Encomendero J, Protasenko V, Sensale-Rodriguez B, et al. (2019) Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures Physical Review Applied. 11 |
| Islam SM, Lee K, Verma J, et al. (2017) MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures Applied Physics Letters. 110: 041108 |
| Gupta P, Rahman AA, Subramanian S, et al. (2016) Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Scientific Reports. 6: 23708 |
| Islam SM, Protasenko V, Rouvimov S, et al. (2016) Sub-230nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode Japanese Journal of Applied Physics. 55 |
| Yan R, Fathipour S, Han Y, et al. (2015) Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters |
| Hu Z, Nomoto K, Song B, et al. (2015) Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Applied Physics Letters. 107 |
| Qi M, Nomoto K, Zhu M, et al. (2015) High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Applied Physics Letters. 107 |
| Qi M, Li G, Protasenko V, et al. (2015) Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes Applied Physics Letters. 106 |
| O’Brien WA, Qi M, Yan L, et al. (2015) Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001) Journal of Electronic Materials |