Pallab K. Bhattacharya
Affiliations: | 1978-1983 | Oregon State University, Corvallis, OR | |
1984- | Electrical Engineering and Computer Science | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
semiconductorsWebsite:
https://www.eecs.umich.edu/ece/faculty/bhattacharya/Google:
"Pallab Kumar Bhattacharya"Mean distance: 14.57
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Udai A, Ganguly S, Bhattacharya P, et al. (2022) Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy. Nanotechnology |
Aggarwal T, Udai A, Saha PK, et al. (2022) Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs. Acs Applied Materials & Interfaces. 14: 13812-13819 |
Udai A, Aiello A, Aggarwal T, et al. (2021) Gradual Carrier Filling Effect in "Green" InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption. Acs Applied Materials & Interfaces |
Das D, Aiello A, Guo W, et al. (2020) InGaN/GaN Quantum Dots on Silicon With Coalesced Nanowire Buffer Layers: A Potential Technology for Visible Silicon Photonics Ieee Transactions On Nanotechnology. 19: 571-574 |
Chung K, Pandey A, Sarwar T, et al. (2020) Wavelength tuning in the purple wavelengths using strain-controlled AlxGa1–xN/GaN disk-in-wire structures Applied Physics Letters. 116: 041102 |
Wu Y, Laleyan DA, Deng Z, et al. (2020) Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors Advanced Electronic Materials. 2000337 |
Aiello A, Wu Y, Pandey A, et al. (2019) Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures. Nano Letters |
Schwartz J, Jiang Y, Wang Y, et al. (2019) Removing Stripes, Scratches, and Curtaining with Nonrecoverable Compressed Sensing. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 1-6 |
Aiello A, Pandey A, Bhattacharya A, et al. (2019) Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 508: 66-71 |
Wu Y, Wang Y, Sun K, et al. (2018) Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0 0 1) substrate through controlled nanowire coalescence Journal of Crystal Growth. 498: 109-114 |