Jack Washburn
Affiliations: | Materials Science and Engineering | University of California, Berkeley, Berkeley, CA, United States |
Website:
https://www.mse.berkeley.edu/news/in-memoriam-professor-emeritus-jack-washburnGoogle:
"Jack Washburn"Bio:
(1921 - 2013)
https://books.google.com/books?id=GPRIAQAAMAAJ
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Parents
Sign in to add mentor| Earl R. Parker | grad student | 1954 | UC Berkeley | |
| (Effect of controlled arrays of dislocation boundaries on the strength of zinc crystals.) | ||||
Children
Sign in to add trainee| James Martin Galligan | grad student | 1963 | UC Berkeley |
| Jagdish Narayan | grad student | 1971 | UC Berkeley (E-Tree) |
| Timothy D. Sands | grad student | 1984 | UC Berkeley (E-Tree) |
| Yong Chen | grad student | 1996 | UC Berkeley (Chemistry Tree) |
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Publications
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| Liliental-Weber Z, Zakharov D, Jasinski J, et al. (2002) Screw dislocations in MBE GaN layers grown on top of HVPE layers: Are they different? Materials Research Society Symposium - Proceedings. 743: 243-248 |
| Liliental-Weber Z, Jasinski J, Washburn J. (2002) Differences and similarities between structural properties of GaN grown by different growth methods Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 70-75 |
| Lim SH, Washburn J, Liliental-Weber Z. (2002) Transmission electron microscopy analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN Journal of Electron Microscopy. 51 |
| Liliental-Weber Z, Jasinski J, Washburn J, et al. (2002) Screw dislocations in GaN Microscopy and Microanalysis. 8: 1198-1199 |
| Liliental-Weber Z, Jasinski J, Washburn J. (2002) Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods Journal of Crystal Growth. 246: 259-270 |
| Lim SH, Washburn J, Liliental-Weber Z, et al. (2001) Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2601-2603 |
| Jasinski J, Yu KM, Walukiewicz W, et al. (2001) Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation Physica B: Condensed Matter. 308: 874-876 |
| Bourret-Courchesne ED, Yu KM, Benamara M, et al. (2001) Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer Journal of Electronic Materials. 30: 1417-1420 |
| Liliental-Weber Z, Benamara M, Washburn J, et al. (2001) Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies Journal of Electronic Materials. 30: 439-444 |
| Liliental-Weber Z, Benamara M, Swider W, et al. (2000) Mg segregation, difficulties of p-doping in gan Materials Research Society Symposium - Proceedings. 595 |