Julian C. Burton, Ph.D.
Affiliations: | 2000 | Rutgers University, New Brunswick, New Brunswick, NJ, United States |
Area:
Physical Chemistry, Analytical ChemistryGoogle:
"Julian Burton"Parents
Sign in to add mentor| Frederick H. Long | grad student | 2000 | Rutgers, New Brunswick | |
| (Characterization of silicon carbide using Raman spectroscopy.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Yoganathan M, Gupta A, Long F, et al. (2000) Growth and characterization of large diameter semi-insulating 6H silicon carbide substrates Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 128-134 |
| Burton JC, Long FH, Khlebnikov Y, et al. (2000) Characterization of silicon carbide using Raman spectroscopy Materials Science Forum. 338 |
| Burton JC, Pophristic M, Long FH, et al. (1999) Optical characterization of SiC wafers Materials Research Society Symposium - Proceedings. 572: 201-206 |
| Burton JC, Sun L, Long FH, et al. (1999) First- And second-order Raman scattering from semi-insulating 4H-SiC Physical Review B - Condensed Matter and Materials Physics. 59: 7282-7284 |
| Burton JC, Long FH, Ferguson IT. (1999) Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide Journal of Applied Physics. 86: 2073-2077 |
| Burton JC, Sun L, Pophristic M, et al. (1998) Spatial characterization of doped SiC wafers by Raman spectroscopy Journal of Applied Physics. 84: 6268-6273 |
| Burton JC, Cohen S, Lukacs SJ, et al. (1997) Raman spectroscopy of Mg-doped gallium nitride: Shift of the A1(LO) phonon Leos Summer Topical Meeting. 56-57 |