Mark J. Cardillo
Affiliations: | Camille and Henry Dreyfus Foundation |
Area:
Photonics Materials ResearchWebsite:
http://www.dreyfus.org/about/staff-bio.shtmlGoogle:
"Mark Cardillo"Parents
Sign in to add mentor| Simon H. Bauer | grad student | 1970 | Cornell | |
| (Projection of gas phase electron diffraction patterns: development of a new technique) | ||||
Children
Sign in to add trainee| Robert B. Laughlin | post-doc | 1980 | Bell Labs (Physics Tree) |
| Steven J. Sibener | post-doc | 1979-1980 | Bell Labs |
| Paul S. Weiss | post-doc | 1986-1988 | Bell Labs |
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Publications
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| Weiss PS, Trevor PL, Kern K, et al. (1990) Carrier excitation by atomic collision on GaAs(110) Surface Science. 226: 191-198 |
| Weiss PS, Trevor PL, Cardillo MJ. (1989) Gas-surface interactions on InP monitored by changes in substrate electronic properties The Journal of Chemical Physics. 90: 5146-5153 |
| Weiss PS, Trevor PL, Cardillo MJ. (1988) Carrier excitation by atomic collisions at semiconductor surfaces. Physical Review. B, Condensed Matter. 38: 9928-9935 |
| Weiss PS, Amirav A, Trevor PL, et al. (1988) Hyperthermal gas-surface scattering Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 889-894 |
| Lambert WR, Trevor PL, Cardillo MJ, et al. (1987) Surface structure of Ge(100) studied by He diffraction. Physical Review. B, Condensed Matter. 35: 8055-8064 |
| Lim C, Tully JC, Amirav A, et al. (1987) Trajectory studies of hyperthermal Xe scattering from GaAs(110) The Journal of Chemical Physics. 87: 1808-1816 |
| Amirav A, Cardillo MJ, Trevor PL, et al. (1987) Atom-surface scattering dynamics at hyperthermal energies The Journal of Chemical Physics. 87: 1796-1807 |
| Amirav A, Cardillo MJ. (1986) Electron-hole pair creation by atomic scattering at surfaces. Physical Review Letters. 57: 2299-2302 |
| Amirav A, Lambert WR, Cardillo MJ, et al. (1986) Electron-hole pair creation at a Ge(100) surface by ground-state neutral Xe atoms Journal of Applied Physics. 59: 2213-2215 |
| Cardillo MJ, Lambert WR. (1986) Order and structure of semiconductor surfaces: An assessment with He diffraction Surface Science. 168: 724-733 |