Charles Andrew Evans, Jr.
Affiliations: | 1970-1978 | Chemistry | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
secondary ion mass spectrometryWebsite:
https://www.legacy.com/obituaries/mercurynews/obituary.aspx?n=charles-andrew-evans-drew&pid=188851897Google:
"Charles Andrew Evans, Jr."Bio:
(1942 - 2018)
DOI: 10.1021/ac60262a022
Parents
Sign in to add mentor| George Harold Morrison | grad student | 1968 | Cornell | |
| (Spark source mass spectrographic method for the survey analysis of trace elements in biological materials) | ||||
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Publications
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| Wilson RG, Sadana DK, Sigmon TW, et al. (1983) Correlation among secondary ion mass spectrometry, cross‐section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination Applied Physics Letters. 43: 549-551 |
| Wilson RG, Jamba DM, Deline VR, et al. (1983) Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation Journal of Applied Physics. 54: 3849-3854 |
| Wilson RG, Evans CA, Norberg JC, et al. (1983) Redistribution of chromium under annealed sulfur implants into chromium-doped GaAs Journal of Applied Physics. 54: 6868-6874 |
| Odom RW, Furman BK, Evans CA, et al. (1983) Quantitative image acquisition system for ion microscopy based on the resistive anode encoder Analytical Chemistry. 55: 574-578 |
| Drummond TJ, Lyons WG, Fischer R, et al. (1982) Si INCORPORATION IN Al//xGa//1// minus //xAs GROWN BY MOLECULAR BEAM EPITAXY. Journal of Vacuum Science & Technology. 21: 957-960 |
| Magee TJ, Leung C, Kawayoshi H, et al. (1981) The role of stabilized back‐surface damage in controlling internal SiOx nucleation and denudation zones in Si Applied Physics Letters. 39: 631-633 |
| Magee TJ, Leung C, Kawayoshi H, et al. (1981) Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si Applied Physics Letters. 39: 564-566 |
| Magee TJ, Leung C, Kawayoshi H, et al. (1981) Thermal redistribution of oxygen during solid‐phase regrowth of arsenic‐implanted amorphized Si Applied Physics Letters. 39: 413-415 |
| Magee TJ, Leung C, Kawayoshi H, et al. (1981) Redistribution of oxygen within damage regions of boron‐implanted silicon Applied Physics Letters. 39: 260-262 |
| Magee TJ, Kawayoshi H, Ormond RD, et al. (1981) Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing Applied Physics Letters. 39: 906-908 |