Year |
Citation |
Score |
2017 |
Mattson EC, Michalak DJ, Veyan JF, Chabal YJ. Cobalt and iron segregation and nitride formation from nitrogen plasma treatment of CoFeB surfaces. The Journal of Chemical Physics. 146: 052805. PMID 28178834 DOI: 10.1063/1.4964679 |
0.496 |
|
2016 |
Liu LH, Michalak DJ, Chopra TP, Pujari SP, Cabrera W, Dick D, Veyan JF, Hourani R, Halls MD, Zuilhof H, Chabal YJ. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide-selective functionalization of Si3N4 and SiO2. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 094014. PMID 26870908 DOI: 10.1088/0953-8984/28/9/094014 |
0.701 |
|
2016 |
Mattson EC, Michalak DJ, Cabrera W, Veyan JF, Chabal YJ. Initial nitride formation during plasma-nitridation of cobalt surfaces Applied Physics Letters. 109: 091602. DOI: 10.1063/1.4961943 |
0.491 |
|
2015 |
Liu LH, Debenedetti WJI, Peixoto T, Gokalp S, Shafiq N, Veyan JF, Michalak DJ, Hourani R, Chabal YJ. Publisher's Note: “Morphology and chemical termination of HF-etched Si3N4 surfaces” [Appl. Phys. Lett. 105, 261603 (2014)] Applied Physics Letters. 106: 29901. DOI: 10.1063/1.4906341 |
0.306 |
|
2014 |
Chawla JS, Singh KJ, Myers A, Michalak DJ, Schenker R, Jezewski C, Krist B, Gstrein F, Indukuri TK, Yoo HJ. Patterning challenges in the fabrication of 12 nm half-pitch dual damascene copper ultra low-k interconnects Proceedings of Spie - the International Society For Optical Engineering. 9054. DOI: 10.1117/12.2048599 |
0.71 |
|
2014 |
Liu LH, Debenedetti WJI, Peixoto T, Gokalp S, Shafiq N, Veyan JF, Michalak DJ, Hourani R, Chabal YJ. Morphology and chemical termination of HF-etched Si3N4 surfaces Applied Physics Letters. 105. DOI: 10.1063/1.4905282 |
0.64 |
|
2014 |
Pomorski TA, Bittel BC, Lenahan PM, Mays E, Ege C, Bielefeld J, Michalak D, King SW. Defect structure and electronic properties of SiOC:H films used for back end of line dielectrics Journal of Applied Physics. 115. DOI: 10.1063/1.4882023 |
0.348 |
|
2010 |
Michalak DJ, Amy SR, Aureau D, Dai M, Estève A, Chabal YJ. Nanopatterning Si(111) surfaces as a selective surface-chemistry route. Nature Materials. 9: 266-71. PMID 20062049 DOI: 10.1038/Nmat2611 |
0.701 |
|
2008 |
Traub MC, Biteen JS, Michalak DJ, Webb LJ, Brunschwig BS, Lewis NS. Phosphine functionalization of GaAs(111)A surfaces Journal of Physical Chemistry C. 112: 18467-18473. DOI: 10.1021/Jp803992H |
0.803 |
|
2008 |
Michalak DJ, Amy SR, Estève A, Chabal YJ. Investigation of the chemical purity of silicon surfaces reacted with liquid methanol Journal of Physical Chemistry C. 112: 11907-11919. DOI: 10.1021/Jp8030539 |
0.626 |
|
2008 |
Ferguson GA, Raghavachari K, Michalak DJ, Chabal Y. Adsorbate-surface phonon interactions in deuterium-passivated Si(111)-(1 × 1) Journal of Physical Chemistry C. 112: 1034-1039. DOI: 10.1021/Jp0758768 |
0.595 |
|
2008 |
Michalak DJ, Gstrein F, Lewis NS. The role of band bending in affecting the surface recombination velocities for Si(111) in contact with aqueous acidic electrolytes Journal of Physical Chemistry C. 112: 5911-5921. DOI: 10.1021/Jp075354S |
0.845 |
|
2007 |
Michalak DJ, Gstrein F, Lewis NS. Interfacial energetics of silicon in contact with 11 M NH 4F(aq), buffered HF(aq), 27 MHF(aq), and 18 M H 2so 4 Journal of Physical Chemistry C. 111: 16516-16532. DOI: 10.1021/Jp074971D |
0.826 |
|
2007 |
Amy SR, Michalak DJ, Chabal YJ, Wielunski L, Hurley PT, Lewis NS. Investigation of the reactions during alkylation of chlorine-terminated silicon (111) surfaces Journal of Physical Chemistry C. 111: 13053-13061. DOI: 10.1021/Jp071793F |
0.655 |
|
2007 |
Gstrein F, Michalak DJ, Knapp DW, Lewis NS. Near-surface channel impedance measurements, open-circuit impedance spectra, and differential capacitance vs potential measurements of the fermi level position at Si/CH3CN contacts Journal of Physical Chemistry C. 111: 8120-8127. DOI: 10.1021/Jp066226R |
0.818 |
|
2006 |
Webb LJ, Michalak DJ, Biteen JS, Brunschwig BS, Chan AS, Knapp DW, Meyer HM, Nemanick EJ, Traub MC, Lewis NS. High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces. The Journal of Physical Chemistry. B. 110: 23450-9. PMID 17107197 DOI: 10.1021/Jp063366S |
0.815 |
|
2006 |
Michalak DJ, Rivillon S, Chabal YJ, Estève A, Lewis NS. Infrared spectroscopic investigation of the reaction of hydrogen-terminated, (111)-oriented, silicon surfaces with liquid methanol. The Journal of Physical Chemistry. B. 110: 20426-34. PMID 17034227 DOI: 10.1021/Jp0624303 |
0.738 |
|
2006 |
Traub MC, Biteen JS, Michalak DJ, Webb LJ, Brunschwig BS, Lewis NS. High-resolution X-ray photoelectron spectroscopy of chlorine-terminated GaAs(111)A surfaces. The Journal of Physical Chemistry. B. 110: 15641-4. PMID 16898703 DOI: 10.1021/Jp061623N |
0.781 |
|
2006 |
Nemanick EJ, Hurley PT, Webb LJ, Knapp DW, Michalak DJ, Brunschwig BS, Lewis NS. Chemical and electrical passivation of single-crystal silicon(100) surfaces through a two-step chlorination/alkylation process. The Journal of Physical Chemistry. B. 110: 14770-8. PMID 16869585 DOI: 10.1021/Jp056773X |
0.824 |
|
2006 |
Solares SD, Michalak DJ, Goddard WA, Lewis NS. Theoretical investigation of the structure and coverage of the Si(111)-OCH3 surface. The Journal of Physical Chemistry. B. 110: 8171-5. PMID 16623491 DOI: 10.1021/Jp056796B |
0.754 |
|
2006 |
Webb LJ, Rivillon S, Michalak DJ, Chabal YJ, Lewis NS. Transmission infrared spectroscopy of methyl- and ethyl-terminated silicon(111) surfaces. The Journal of Physical Chemistry. B. 110: 7349-56. PMID 16599509 DOI: 10.1021/Jp054618C |
0.805 |
|
2005 |
Webb LJ, Nemanick EJ, Biteen JS, Knapp DW, Michalak DJ, Traub MC, Chan AS, Brunschwig BS, Lewis NS. High-resolution X-ray photoelectron spectroscopic studies of alkylated silicon(111) surfaces. The Journal of Physical Chemistry. B. 109: 3930-7. PMID 16851446 DOI: 10.1021/Jp047199C |
0.811 |
|
2005 |
Rivillon S, Chabal YJ, Webb LJ, Michalak DJ, Lewis NS, Halls MD, Raghavachari K. Chlorination of hydrogen-terminated silicon (111) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1100-1106. DOI: 10.1116/1.1861941 |
0.783 |
|
2002 |
Michalak DJ, Lewis NS. Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts Applied Physics Letters. 80: 4458-4460. DOI: 10.1063/1.1479456 |
0.704 |
|
2002 |
Gstrein F, Michalak DJ, Royea WJ, Lewis NS. Effects of interfacial energetics on the effective surface recombination velocity of Si/liquid contacts Journal of Physical Chemistry B. 106: 2950-2961. DOI: 10.1021/Jp012997D |
0.817 |
|
2000 |
Royea WJ, Michalak DJ, Lewis NS. Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts Applied Physics Letters. 77: 2566-2568. DOI: 10.1063/1.1318935 |
0.858 |
|
2000 |
Haber JA, Lauermann I, Michalak D, Vaid TP, Lewis NS. Electrochemical and Electrical Behavior of (111)-Oriented Si Surfaces Alkoxylated through Oxidative Activation of Si−H Bonds The Journal of Physical Chemistry B. 104: 9947-9950. DOI: 10.1021/Jp001791U |
0.826 |
|
2000 |
Royea WJ, Michalak DJ, Lewis NS. Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts Applied Physics Letters. 77: 2566-2568. |
0.822 |
|
2000 |
Haber JA, Lauermann I, Michalak D, Vaid TP, Lewis NS. Electrochemical and electrical behavior of (111)-oriented Si surfaces alkoxylated through oxidative activation of Si-H bonds Journal of Physical Chemistry B. 104: 9947-9950. |
0.784 |
|
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