Year |
Citation |
Score |
2021 |
Sun Y, Fan S, Faucher J, Hool RD, Li BD, Dhingra P, Lee ML. 2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy Solar Energy Materials and Solar Cells. 219: 110774. DOI: 10.1016/J.Solmat.2020.110774 |
0.823 |
|
2020 |
Hool RD, Chai Y, Sun Y, Eng BC, Dhingra P, Fan S, Yaung KN, Lee ML. Relaxed GaP on Si with low threading dislocation density Applied Physics Letters. 116: 42102. DOI: 10.1063/1.5141122 |
0.796 |
|
2019 |
Chen C, Chen F, Chen X, Deng B, Eng B, Jung D, Guo Q, Yuan S, Watanabe K, Taniguchi T, Lee ML, Xia F. Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus. Nano Letters. PMID 30721622 DOI: 10.1021/Acs.Nanolett.8B04041 |
0.681 |
|
2019 |
Fan S, Jung D, Sun Y, Li BD, Martin-Martin D, Lee ML. 16.8%-Efficient n + /p GaAs Solar Cells on Si With High Short-Circuit Current Density Ieee Journal of Photovoltaics. 9: 660-665. DOI: 10.1109/Jphotov.2019.2894657 |
0.816 |
|
2019 |
Walker ES, Muschinske S, Brennan CJ, Na SR, Trivedi T, March SD, Sun Y, Yang T, Yau A, Jung D, Briggs AF, Krivoy EM, Lee ML, Liechti KM, Yu ET, et al. Composition-dependent structural transition in epitaxial
Bi1−xSbx
thin films on Si(111) Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.064201 |
0.769 |
|
2019 |
Jung D, Yu L, Dev S, Wasserman D, Lee ML. Design and growth of multi-functional InAsP metamorphic buffers for mid-infrared quantum well lasers on InP Journal of Applied Physics. 125: 082537. DOI: 10.1063/1.5054574 |
0.705 |
|
2019 |
Ironside DJ, Skipper AM, Leonard TA, Radulaski M, Sarmiento T, Dhingra P, Lee ML, Vučković J, Bank SR. High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach Crystal Growth & Design. 19: 3085-3091. DOI: 10.1021/Acs.Cgd.8B01671 |
0.51 |
|
2019 |
Fan S, Yu ZJ, Sun Y, Weigand W, Dhingra P, Kim M, Hool RD, Ratta ED, Holman ZC, Lee ML. 20%-efficient epitaxial GaAsP/Si tandem solar cells Solar Energy Materials and Solar Cells. 202: 110144. DOI: 10.1016/J.Solmat.2019.110144 |
0.757 |
|
2019 |
Mukherjee K, Vaisman M, Callahan PG, Lee ML. Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges Journal of Crystal Growth. 512: 169-175. DOI: 10.1016/J.Jcrysgro.2019.01.044 |
0.802 |
|
2018 |
Grandidier J, Atwater HA, Cutts JA, Kirk AP, Osowski ML, Gogna PK, Fan S, Lee ML, Stevens MA, Jahelka P, Tagliabue G. Low-Intensity High-Temperature (LIHT) Solar Cells for Venus Atmosphere Ieee Journal of Photovoltaics. 8: 1621-1626. DOI: 10.1109/Jphotov.2018.2871333 |
0.502 |
|
2018 |
Perl EE, Simon J, Friedman DJ, Jain N, Sharps P, McPheeters C, Sun Y, Lee ML, Steiner MA. (Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration Ieee Journal of Photovoltaics. 8: 640-645. DOI: 10.1109/Jphotov.2017.2783853 |
0.738 |
|
2018 |
Gai B, Sun Y, Chen H, Lee ML, Yoon J. 10-Fold-Stack Multilayer-Grown Nanomembrane GaAs Solar Cells Acs Photonics. 5: 2786-2790. DOI: 10.1021/Acsphotonics.8B00586 |
0.73 |
|
2017 |
Lee ML. Materials science: Crystals aligned through graphene. Nature. 544: 301-302. PMID 28426002 DOI: 10.1038/544301A |
0.439 |
|
2017 |
Jung D, Faucher J, Mukherjee S, Akey A, Ironside DJ, Cabral M, Sang X, Lebeau J, Bank SR, Buonassisi T, Moutanabbir O, Lee ML. Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications. 8: 14204. PMID 28128282 DOI: 10.1038/Ncomms14204 |
0.795 |
|
2017 |
Liu AY, Peters J, Huang X, Jung D, Norman J, Lee ML, Gossard AC, Bowers JE. Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si. Optics Letters. 42: 338-341. PMID 28081107 DOI: 10.1364/Ol.42.000338 |
0.71 |
|
2017 |
Gai B, Sun Y, Lim H, Chen H, Faucher J, Lee ML, Yoon J. Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics. Acs Nano. PMID 28075560 DOI: 10.1021/Acsnano.6B07605 |
0.843 |
|
2017 |
Yerino CD, Liang B, Huffaker DL, Simmonds PJ, Lee ML. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110) Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 010801. DOI: 10.1116/1.4972049 |
0.809 |
|
2017 |
Jung D, Bank S, Lee ML, Wasserman D. Next-generation mid-infrared sources Journal of Optics. 19: 123001. DOI: 10.1088/2040-8986/Aa939B |
0.613 |
|
2017 |
Salas R, Guchhait S, Sifferman SD, McNicholas KM, Dasika VD, Jung D, Krivoy EM, Lee ML, Bank SR. Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation Apl Materials. 5: 096106. DOI: 10.1063/1.4991589 |
0.66 |
|
2017 |
Vaisman M, Fan S, Nay Yaung K, Perl E, Martín-Martín D, Yu ZJ, Leilaeioun M, Holman ZC, Lee ML. 15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates Acs Energy Letters. 2: 1911-1918. DOI: 10.1021/Acsenergylett.7B00538 |
0.817 |
|
2016 |
Unsleber S, Deppisch M, Krammel CM, Vo M, Yerino CD, Simmonds PJ, Lee ML, Koenraad PM, Schneider C, Höfling S. Bulk AlInAs on InP(111) as a novel material system for pure single photon emission. Optics Express. 24: 23198-23206. PMID 27828385 DOI: 10.1364/Oe.24.023198 |
0.796 |
|
2016 |
Walker ES, Na SR, Jung D, March SD, Kim JS, Trivedi T, Li W, Tao L, Lee ML, Liechti KM, Akinwande D, Bank SR. Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films. Nano Letters. PMID 27775368 DOI: 10.1021/Acs.Nanolett.6B02931 |
0.671 |
|
2016 |
Richardson CJK, Lee ML. Metamorphic epitaxial materials Mrs Bulletin. 41: 193-198. DOI: 10.1557/Mrs.2016.7 |
0.507 |
|
2016 |
Gould M, Chakravarthi S, Christen IR, Thomas N, Dadgostar S, Song Y, Lee ML, Hatami F, Fu KMC. Large-scale GaP-on-diamond integrated photonics platform for NV center-based quantum information Journal of the Optical Society of America B: Optical Physics. 33: B35-B42. DOI: 10.1364/Josab.33.000B35 |
0.593 |
|
2016 |
Faucher J, Masuda T, Lee ML. Initiation strategies for simultaneous control of antiphase domains and stacking faults in GaAs solar cells on Ge Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4945659 |
0.824 |
|
2016 |
Perl EE, Simon J, Geisz JF, Lee ML, Friedman DJ, Steiner MA. Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 ° C Ieee Journal of Photovoltaics. 6: 1345-1352. DOI: 10.1109/Jphotov.2016.2582398 |
0.493 |
|
2016 |
Masuda T, Faucher J, Lee ML. Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications Journal of Physics D. 49: 465105. DOI: 10.1088/0022-3727/49/46/465105 |
0.825 |
|
2016 |
Jung D, Yu L, Dev S, Wasserman D, Lee ML. Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers Applied Physics Letters. 109: 211101. DOI: 10.1063/1.4968560 |
0.683 |
|
2016 |
Schulze CS, Huang X, Prohl C, Füllert V, Rybank S, Maddox SJ, March SD, Bank SR, Lee ML, Lenz A. Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate Applied Physics Letters. 108. DOI: 10.1063/1.4945598 |
0.446 |
|
2016 |
Baribeau JM, Bauer M, Desjardins P, Lee ML, Loo R, Moutanabbir O, Rastelli A, Reznicek A, Quitoriano N. ICSI-9, Montréal 2015: Silicon for now and beyond Thin Solid Films. 602: 1-2. DOI: 10.1016/J.Tsf.2016.01.041 |
0.404 |
|
2016 |
Yaung KN, Kirnstoetter S, Faucher J, Gerger A, Lochtefeld A, Barnett A, Lee ML. Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging Journal of Crystal Growth. 453: 65-70. DOI: 10.1016/J.Jcrysgro.2016.08.015 |
0.777 |
|
2016 |
Goh T, Huang JS, Yager KG, Sfeir MY, Nam CY, Tong X, Guard LM, Melvin PR, Antonio F, Bartolome BG, Lee ML, Hazari N, Taylor AD. Quaternary Organic Solar Cells Enhanced by Cocrystalline Squaraines with Power Conversion Efficiencies >10% Advanced Energy Materials. DOI: 10.1002/Aenm.201600660 |
0.459 |
|
2015 |
Lee SM, Kwong A, Jung D, Faucher J, Biswas R, Shen L, Kang D, Lee ML, Yoon J. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures. Acs Nano. PMID 26376087 DOI: 10.1021/Acsnano.5B05585 |
0.834 |
|
2015 |
Redding B, Cerjan A, Huang X, Lee ML, Stone AD, Choma MA, Cao H. Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging. Proceedings of the National Academy of Sciences of the United States of America. 112: 1304-9. PMID 25605946 DOI: 10.1073/Pnas.1419672112 |
0.373 |
|
2015 |
Gould M, Thomas NK, Song Y, Lee ML, Fu KMC. Single NV zero-phonon line emission into waveguide- coupled GaP-on-diamond disk resonators Cleo: Qels - Fundamental Science, Cleo_qels 2015. 1551p. DOI: 10.1364/CLEO_QELS.2015.FW4B.3 |
0.254 |
|
2015 |
Vaisman M, Mukherjee K, Masuda T, Yaung KN, Fitzgerald EA, Lee ML. Direct-gap 2.1-2.2 eV AlInP solar cells on GaInAs/GaAs metamorphic buffers 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356435 |
0.475 |
|
2015 |
Masuda T, Faucher J, Lee ML. Germanium solar cells grown by molecular beam epitaxy for lattice-matched, four-junction solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356341 |
0.796 |
|
2015 |
Sun Y, Montgomery KH, Wang X, Tomasulo S, Lee ML, Bermel P. Modeling wide bandgap GaInP photovoltaic cells for conversion efficiencies up to 16.5% 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356074 |
0.735 |
|
2015 |
Lee SM, Kwong A, Daehwan J, Faucher J, Shen L, Biswas R, Lee ML, Yoon J. High performance ultrathin GaAs solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355959 |
0.813 |
|
2015 |
Vaisman M, Mukherjee K, Masuda T, Nay Yaung K, Fitzgerald EA, Lee ML. Direct-Gap 2.1–2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers Ieee Journal of Photovoltaics. DOI: 10.1109/JPHOTOV.2015.2506401 |
0.467 |
|
2015 |
Li X, Deng B, Wang X, Chen S, Vaisman M, Karato SI, Pan G, Lee ML, Cha J, Wang H, Xia F. Synthesis of thin-film black phosphorus on a flexible substrate 2d Materials. 2. DOI: 10.1088/2053-1583/2/3/031002 |
0.778 |
|
2015 |
Masuda T, Tomasulo S, Lang JR, Lee ML. Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy Journal of Applied Physics. 117. DOI: 10.1063/1.4914046 |
0.817 |
|
2015 |
Salas R, Guchhait S, Sifferman SD, McNicholas KM, Dasika VD, Krivoy EM, Jung D, Lee ML, Bank SR. Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation Applied Physics Letters. 106. DOI: 10.1063/1.4913611 |
0.688 |
|
2015 |
Vaisman M, Tomasulo S, Masuda T, Lang JR, Faucher J, Lee ML. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4908181 |
0.814 |
|
2015 |
Goh T, Huang JS, Bartolome B, Sfeir MY, Vaisman M, Lee ML, Taylor AD. Panchromatic polymer-polymer ternary solar cells enhanced by Förster resonance energy transfer and solvent vapor annealing Journal of Materials Chemistry A. 3: 18611-18621. DOI: 10.1039/C5Ta04905A |
0.801 |
|
2015 |
Goh T, Huang JS, Bielinski EA, Thompson BA, Tomasulo S, Lee ML, Sfeir MY, Hazari N, Taylor AD. Coevaporated bisquaraine inverted solar cells: Enhancement due to energy transfer and open circuit voltage control Acs Photonics. 2: 86-95. DOI: 10.1021/Ph500282Z |
0.744 |
|
2015 |
Gould M, Thomas NK, Song Y, Lee ML, Fu KMC. Single NV zero-phonon line emission into waveguide-coupled GaP-on-diamond disk resonators Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015. |
0.254 |
|
2014 |
Shen J, Song Y, Lee ML, Cha JJ. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems. Nanotechnology. 25: 465702. PMID 25354930 DOI: 10.1017/S1431927614004796 |
0.621 |
|
2014 |
Sheu JK, Chen FB, Wu SH, Lee ML, Chen PC, Yeh YH. Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns. Optics Express. 22: A1222-8. PMID 25322176 DOI: 10.1364/OE.22.0A1222 |
0.472 |
|
2014 |
Thomas N, Barbour RJ, Song Y, Lee ML, Fu KM. Waveguide-integrated single-crystalline GaP resonators on diamond. Optics Express. 22: 13555-64. PMID 24921549 DOI: 10.1364/Oe.22.013555 |
0.582 |
|
2014 |
Redding B, Cerjan A, Huang X, Stone AD, Lee ML, Choma MA, Cao H. Low-spatial coherence chaotic cavity laser for speckle-free full-field imaging Frontiers in Optics, Fio 2014. DOI: 10.1364/Fio.2014.Fw2G.2 |
0.353 |
|
2014 |
Thomas NK, Barbour R, Song Y, Lee ML, Fu KMC. Fabrication of GaP disk resonator arrays coupled to nitrogen-vacancy centers in diamond Proceedings of Spie - the International Society For Optical Engineering. 8997. DOI: 10.1117/12.2040952 |
0.577 |
|
2014 |
Yaung KN, Lang JR, Lee ML. Towards high efficiency GaAsP solar cells on (001) GaP/Si 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 831-835. DOI: 10.1109/PVSC.2014.6925043 |
0.451 |
|
2014 |
Masuda T, Tomasulo S, Lang JR, Lee ML. Effect of substrate effcut angle on AlGaInP and GaInP solar cells grown by molecular beam epitaxy 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 505-509. DOI: 10.1109/PVSC.2014.6924970 |
0.756 |
|
2014 |
Yerino CD, Simmonds PJ, Liang B, Jung D, Schneider C, Unsleber S, Vo M, Huffaker DL, Höfling S, Kamp M, Lee ML. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting Applied Physics Letters. 105. DOI: 10.1063/1.4904944 |
0.794 |
|
2014 |
Dasika VD, Krivoy EM, Nair HP, Maddox SJ, Park KW, Jung D, Lee ML, Yu ET, Bank SR. Increased InAs quantum dot size and density using bismuth as a surfactant Applied Physics Letters. 105. DOI: 10.1063/1.4904825 |
0.687 |
|
2014 |
Yu L, Jung D, Law S, Shen J, Cha JJ, Lee ML, Wasserman D. Controlling quantum dot energies using submonolayer bandstructure engineering Applied Physics Letters. 105. DOI: 10.1063/1.4893983 |
0.691 |
|
2014 |
Yerino CD, Simmonds PJ, Liang B, Dorogan VG, Ware ME, Mazur YI, Jung D, Huffaker DL, Salamo GJ, Lee ML. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Applied Physics Letters. 105. DOI: 10.1063/1.4893747 |
0.803 |
|
2014 |
Tomasulo S, Nay Yaung K, Faucher J, Vaisman M, Lee ML. Metamorphic 2.1-2.2eV InGaP solar cells on GaP substrates Applied Physics Letters. 104. DOI: 10.1063/1.4874615 |
0.808 |
|
2014 |
Huang X, Jung D, Song Y, Lee M, Masuda T. InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001) Electronics Letters. 50: 1226-1227. DOI: 10.1049/El.2014.2077 |
0.755 |
|
2014 |
Yaung KN, Tomasulo S, Lang JR, Faucher J, Lee ML. Defect selective etching of GaAsyP1-yphotovoltaic materials Journal of Crystal Growth. 404: 140-145. DOI: 10.1016/J.Jcrysgro.2014.07.005 |
0.778 |
|
2014 |
Gould M, Thomas N, Barbour R, Song Y, Lee ML, Fu KM. Waveguiding in polycrystalline GaP grown on SiO2 by molecular beam deposition Optics Infobase Conference Papers. |
0.398 |
|
2014 |
Thomas N, Barbour R, Song Y, Lee ML, Fu KMC. Single-crystalline GaP cavity-waveguide structures on diamond Optics Infobase Conference Papers. |
0.342 |
|
2014 |
Gould M, Thomas N, Barbour R, Song Y, Lee ML, Fu KM. Waveguiding in polycrystalline GaP grown on SiO2 by molecular beam deposition Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014. |
0.337 |
|
2014 |
Thomas N, Barbour R, Song Y, Lee ML, Fu KMC. Single-crystalline GaP cavity-waveguide structures on diamond Optics Infobase Conference Papers. |
0.307 |
|
2014 |
Gould M, Thomas N, Barbour R, Song Y, Lee ML, Fu KM. Waveguiding in polycrystalline GaP grown on SiO2 by molecular beam deposition Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014. |
0.337 |
|
2013 |
Simmonds PJ, Yerino CD, Sun M, Liang B, Huffaker DL, Dorogan VG, Mazur Y, Salamo G, Lee ML. Tuning quantum dot luminescence below the bulk band gap using tensile strain. Acs Nano. 7: 5017-23. PMID 23701255 DOI: 10.1021/Nn400395Y |
0.813 |
|
2013 |
Huang JS, Goh T, Li X, Sfeir MY, Bielinski EA, Tomasulo S, Lee ML, Hazari N, Taylor AD. Improving the performance of P3HT/PCBM solar cells with squaraine dye Proceedings of Spie - the International Society For Optical Engineering. 8830. DOI: 10.1117/12.2023447 |
0.708 |
|
2013 |
Tomasulo S, Faucher J, Lang JR, Yaung KN, Lee ML. 2.19 eV InGaP solar cells on GaP substrates Conference Record of the Ieee Photovoltaic Specialists Conference. 3324-3328. DOI: 10.1109/PVSC.2013.6745162 |
0.837 |
|
2013 |
Lang JR, Faucher J, Tomasulo S, Yaung KN, Lee ML. GaAsP solar cells on GaP/Si grown by molecular beam epitaxy Conference Record of the Ieee Photovoltaic Specialists Conference. 2100-2104. DOI: 10.1109/PVSC.2013.6744888 |
0.832 |
|
2013 |
Faucher J, Gerger A, Tomasulo S, Ebert C, Lochtefeld A, Barnett A, Lee ML. Single-junction GaAsP solar cells grown on SiGe graded buffers on Si Applied Physics Letters. 103. DOI: 10.1063/1.4828879 |
0.829 |
|
2013 |
Song Y, Lee ML. InGaAs/GaP quantum dot light-emitting diodes on Si Applied Physics Letters. 103: 141906. DOI: 10.1063/1.4824029 |
0.65 |
|
2013 |
Huang JS, Goh T, Li X, Sfeir MY, Bielinski EA, Tomasulo S, Lee ML, Hazari N, Taylor AD. Polymer bulk heterojunction solar cells employing Förster resonance energy transfer Nature Photonics. 7: 479-485. DOI: 10.1038/Nphoton.2013.82 |
0.731 |
|
2013 |
Dasika VD, Krivoy EM, Nair HP, Maddox SJ, Park KW, Jung D, Lee ML, Yu ET, Bank SR. InAs quantum dot growth using bismuth as a surfactant for optoelectronic applications Cleo: Science and Innovations, Cleo_si 2013. CF1I.2. |
0.353 |
|
2013 |
Dasika VD, Krivoy EM, Nair HP, Maddox SJ, Park KW, Jung D, Lee ML, Yu ET, Bank SR. InAs quantum dot growth using bismuth as a surfactant for optoelectronic applications Cleo: Science and Innovations, Cleo_si 2013. CF1I.2. |
0.341 |
|
2012 |
Shin JC, Mohseni PK, Yu KJ, Tomasulo S, Montgomery KH, Lee ML, Rogers JA, Li X. Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement. Acs Nano. 6: 11074-9. PMID 23128184 DOI: 10.1021/Nn304784Y |
0.746 |
|
2012 |
Simmonds PJ, Lee ML. Tensile-strained growth on low-index GaAs Journal of Applied Physics. 112: 54313. DOI: 10.1063/1.4749407 |
0.714 |
|
2012 |
Tomasulo S, Nay Yaung K, Simon J, Lee ML. GaAsP solar cells on GaP substrates by molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4738373 |
0.797 |
|
2012 |
Moore GF, Konezny SJ, Song HE, Milot RL, Blakemore JD, Lee ML, Batista VS, Schmuttenmaer CA, Crabtree RH, Brudvig GW. Bioinspired high-potential porphyrin photoanodes Journal of Physical Chemistry C. 116: 4892-4902. DOI: 10.1021/Jp210096M |
0.314 |
|
2011 |
Zhang Y, Sun Q, Leung B, Simon J, Lee ML, Han J. The fabrication of large-area, free-standing GaN by a novel nanoetching process. Nanotechnology. 22: 045603. PMID 21169658 DOI: 10.1088/0957-4484/22/4/045603 |
0.574 |
|
2011 |
Rivoire K, Buckley S, Song Y, Simmonds P, Lee ML, Vučković J. Photoluminescence from In0.5Ga0.5P/GaP quantum dots coupled to photonic crystal cavities Optics Infobase Conference Papers. DOI: 10.1364/Fio.2011.Ftho3 |
0.731 |
|
2011 |
Simmonds PJ, Simon J, Woodall JM, Lee ML. Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547716 |
0.739 |
|
2011 |
Simon J, Simmonds PJ, Woodall JM, Lee ML. Graphitized carbon on GaAs(100) substrates Applied Physics Letters. 98. DOI: 10.1063/1.3555442 |
0.707 |
|
2011 |
Simon J, Tomasulo S, Simmonds PJ, Romero M, Lee ML. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells Journal of Applied Physics. 109. DOI: 10.1063/1.3525599 |
0.833 |
|
2010 |
Simon J, Tomasulo S, Simmonds P, Romero MJ, Lee ML. Growth of Metamorphic InGaP for Wide-Bandgap Photovoltaic Junction by MBE Mrs Proceedings. 1268. DOI: 10.1557/Proc-1268-Ee06-04 |
0.814 |
|
2010 |
Lee ML, Simmonds PJ. Tensile strained III-V self-assembled nanostructures on a (110) surface Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.860781 |
0.688 |
|
2010 |
Barletta P, Dezsi G, Lee M, Yi C, Venkatasubramanian R. Si/Ge nanodot superlattices for Si-based photovoltaics Conference Proceedings - Ieee Southeastcon. 404-407. DOI: 10.1109/SECON.2010.5453843 |
0.509 |
|
2010 |
Simon J, Tomasulo S, Simmonds PJ, Romero M, Lee ML. Metamorphic InGaP on GaAs and GaP for wide-bandgap photovoltaic junctions Conference Record of the Ieee Photovoltaic Specialists Conference. 2106-2110. DOI: 10.1109/PVSC.2010.5616304 |
0.819 |
|
2010 |
Simmonds PJ, Lee ML. Tensile strained island growth at step-edges on GaAs(110) Applied Physics Letters. 97. DOI: 10.1063/1.3498676 |
0.674 |
|
2010 |
Lee ML, Dezsi G, Venkatasubramanian R. Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells Thin Solid Films. 518. DOI: 10.1016/J.Tsf.2009.10.060 |
0.563 |
|
2008 |
Lee ML, Venkatasubramanian R. Effect of nanodot areal density and period on thermal conductivity in SiGeSi nanodot superlattices Applied Physics Letters. 92. DOI: 10.1063/1.2842388 |
0.382 |
|
2007 |
Kurtz RM, Alim KA, Pradhan RD, Esterkin V, Savant GD, Venkatasubramanian R, Lee ML, Ghosh S, Calizo I, Balandin AA. High speed nano-optical photodetector for free space communication Proceedings of Spie - the International Society For Optical Engineering. 6556. DOI: 10.1117/12.721336 |
0.222 |
|
2005 |
Lu N, Bai W, Ramirez A, Mouli C, Ritenour A, Lee ML, Antoniadis D, Kwong DL. Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric Applied Physics Letters. 87: 051922. DOI: 10.1063/1.2001757 |
0.596 |
|
2005 |
Andre CL, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Impact of dislocation densities on n +/p and p +/n junction GaAs diodes and solar cells on SiGe virtual substrates Journal of Applied Physics. 98. DOI: 10.1063/1.1946194 |
0.661 |
|
2004 |
Cheng Z, Jung J, Lee ML, Pitera AJ, Hoyt JL, Antoniadis DA, Fitzgerald EA. Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI) Semiconductor Science and Technology. 19: L48-L51. DOI: 10.1088/0268-1242/19/5/L02 |
0.684 |
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