| Year |
Citation |
Score |
| 2022 |
Alam MH, Chowdhury S, Roy A, Wu X, Ge R, Rodder MA, Chen J, Lu Y, Stern C, Houben L, Chrostowski R, Burlison SR, Yang SJ, Serna MI, Dodabalapur A, ... ... Banerjee SK, et al. Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide. Acs Nano. PMID 35188367 DOI: 10.1021/acsnano.1c07705 |
0.533 |
|
| 2020 |
Alam MH, Xu Z, Chowdhury S, Jiang Z, Taneja D, Banerjee SK, Lai K, Braga MH, Akinwande D. Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers. Nature Communications. 11: 3203. PMID 32581271 DOI: 10.1038/S41467-020-17006-W |
0.354 |
|
| 2020 |
Chi W, Banerjee SK. Progress in Materials Development for the Rapid Efficiency Advancement of Perovskite Solar Cells. Small (Weinheim An Der Bergstrasse, Germany). e1907531. PMID 32452645 DOI: 10.1002/Smll.201907531 |
0.344 |
|
| 2020 |
Zhou Y, Maity N, Rai A, Juneja R, Meng X, Roy A, Zhang Y, Xu X, Lin JF, Banerjee SK, Singh AK, Wang Y. Stacking-Order-Driven Optical Properties and Carrier Dynamics in ReS. Advanced Materials (Deerfield Beach, Fla.). e1908311. PMID 32329148 DOI: 10.1002/Adma.201908311 |
0.311 |
|
| 2020 |
Chowdhury S, Roy A, Bodemann I, Banerjee SK. 2D to 3D Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic and Compact Morphologies. Acs Applied Materials & Interfaces. PMID 32148024 DOI: 10.1021/Acsami.9B23286 |
0.304 |
|
| 2020 |
Koh D, Banerjee SK, Locke C, Saddow SE, Brockman J, Kuhn M, King SW. Erratum: “Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides” [J. Vac. Sci. Technol. B 37, 041206 (2019)] Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 37001. DOI: 10.1116/6.0000202 |
0.322 |
|
| 2020 |
Roy A, Dey R, Pramanik T, Rai A, Schalip R, Majumder S, Guchhait S, Banerjee SK. Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.025001 |
0.342 |
|
| 2020 |
Koh D, Banerjee SK, Brockman J, Kuhn M, King SW. X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces Diamond and Related Materials. 101: 107647. DOI: 10.1016/J.Diamond.2019.107647 |
0.354 |
|
| 2019 |
Park JH, Rai A, Hwang J, Zhang C, Kwak I, Wolf SF, Vishwanath S, Liu X, Dobrowolska M, Furdyna J, Xing HG, Cho K, Banerjee SK, Kummel AC. Band Structure Engineering of Layered WSe via One-Step Chemical Functionalization. Acs Nano. PMID 31260257 DOI: 10.1021/Acsnano.8B09351 |
0.387 |
|
| 2019 |
Tran K, Moody G, Wu F, Lu X, Choi J, Kim K, Rai A, Sanchez DA, Quan J, Singh A, Embley J, Zepeda A, Campbell M, Autry T, Taniguchi T, ... ... Banerjee SK, et al. Evidence for moiré excitons in van der Waals heterostructures. Nature. PMID 30804527 DOI: 10.1038/S41586-019-0975-Z |
0.577 |
|
| 2019 |
Wu D, Li W, Rai A, Wu X, Movva HCP, Yogeesh MN, Chu Z, Banerjee SK, Akinwande D, Lai K. Visualization of Local Conductance in MoS/WSe Heterostructure Transistors. Nano Letters. PMID 30779591 DOI: 10.1021/Acs.Nanolett.8B05159 |
0.376 |
|
| 2019 |
Wu X, Ge R, Chen PA, Chou H, Zhang Z, Zhang Y, Banerjee S, Chiang MH, Lee JC, Akinwande D. Thinnest Nonvolatile Memory Based on Monolayer h-BN. Advanced Materials (Deerfield Beach, Fla.). e1806790. PMID 30773734 DOI: 10.1002/Adma.201806790 |
0.321 |
|
| 2019 |
Koh D, Banerjee SK, Locke C, Saddow SE, Brockman J, Kuhn M, King SW. Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 41206. DOI: 10.1116/1.5111049 |
0.4 |
|
| 2019 |
Zhang Z, Nallan HC, Coffey BM, Ngo TQ, Pramanik T, Banerjee SK, Ekerdt JG. Atomic layer deposition of cobalt oxide on oxide substrates and low temperature reduction to form ultrathin cobalt metal films Journal of Vacuum Science & Technology A. 37: 010903. DOI: 10.1116/1.5063669 |
0.342 |
|
| 2019 |
Bhatti AA, Crum DM, Valsaraj A, Register LF, Banerjee SK. Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs Journal of Applied Physics. 126: 105705. DOI: 10.1063/1.5096391 |
0.356 |
|
| 2019 |
Lin W, Zhuang P, Chou H, Gu Y, Roberts R, Li W, Banerjee SK, Cai W, Akinwande D. Electron redistribution and energy transfer in graphene/MoS2 heterostructure Applied Physics Letters. 114: 113103. DOI: 10.1063/1.5088512 |
0.304 |
|
| 2019 |
Sun Z, Beaumariage J, Movva HC, Chowdhury S, Roy A, Banerjee SK, Snoke DW. Stress-induced bandgap renormalization in atomic crystals Solid State Communications. 288: 18-21. DOI: 10.1016/J.Ssc.2018.11.006 |
0.78 |
|
| 2018 |
Chou H, Majumder S, Roy A, Catalano M, Zhuang P, Quevedo-López MA, Colombo L, Banerjee SK. Dependence of h-BN film thickness as grown on nickel single crystal substrates of different orientation. Acs Applied Materials & Interfaces. PMID 30489058 DOI: 10.1021/Acsami.8B16816 |
0.319 |
|
| 2018 |
Zhuang P, Lin W, Chou H, Roy A, Cai W, Banerjee SK. Growth of lateral graphene/h-BN heterostructure on copper foils by chemical vapor deposition. Nanotechnology. 30: 03LT01. PMID 30418941 DOI: 10.1088/1361-6528/Aaeb75 |
0.338 |
|
| 2018 |
Movva HCP, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, Watanabe K, Banerjee SK, MacDonald AH, Tutuc E. Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}. Physical Review Letters. 120: 107703. PMID 29570322 DOI: 10.1103/Physrevlett.120.107703 |
0.549 |
|
| 2018 |
Gaskins JT, Hopkins PE, Merrill DR, Bauers SR, Hadland E, Johnson DC, Koh D, Yum JH, Banerjee S, Nordell BJ, Paquette MM, Caruso AN, Lanford WA, Henry P, Ross L, et al. Erratum: Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride [ECS J. Solid State Sci. Technol., 6, N189 (2017)] Ecs Journal of Solid State Science and Technology. 7: X3-X3. DOI: 10.1149/2.0331807Jss |
0.304 |
|
| 2018 |
Larentis S, Movva HCP, Fallahazad B, Kim K, Behroozi A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Large effective mass and interaction-enhanced Zeeman splitting of
K
-valley electrons in
MoSe2 Physical Review B. 97. DOI: 10.1103/Physrevb.97.201407 |
0.566 |
|
| 2018 |
Lee S, Ahn J, Mathew L, Rao R, Zhang Z, Kim JH, Banerjee SK, Yu ET. Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer Journal of Applied Physics. 123: 163101. DOI: 10.1063/1.5023000 |
0.396 |
|
| 2018 |
Chen K, Roy A, Rai A, Movva HCP, Meng X, He F, Banerjee SK, Wang Y. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides Apl Materials. 6: 056103. DOI: 10.1063/1.5022339 |
0.341 |
|
| 2017 |
Chen K, Roy A, Rai A, Valsaraj A, Meng X, He F, Xu X, Register LF, Banerjee S, Wang Y. Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide. Acs Applied Materials & Interfaces. PMID 29226670 DOI: 10.1021/Acsami.7B15478 |
0.315 |
|
| 2017 |
Park JH, Sanne A, Guo Y, Amani M, Zhang K, Movva HCP, Robinson JA, Javey A, Robertson J, Banerjee SK, Kummel AC. Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface. Science Advances. 3: e1701661. PMID 29062892 DOI: 10.1126/Sciadv.1701661 |
0.332 |
|
| 2017 |
Brennan CJ, Ghosh R, Koul K, Banerjee SK, Lu N, Yu ET. Out-of-Plane Electromechanical Response of Monolayer Molybdenum Disulfide Measured by Piezoresponse Force Microscopy. Nano Letters. PMID 28763615 DOI: 10.1021/Acs.Nanolett.7B02123 |
0.346 |
|
| 2017 |
Trivedi T, Roy A, Movva HCP, Walker ES, Bank SR, Neikirk DP, Banerjee SK. Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators. Acs Nano. PMID 28692797 DOI: 10.1021/Acsnano.7B03894 |
0.794 |
|
| 2017 |
Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}. Physical Review Letters. 118: 247701. PMID 28665633 DOI: 10.1103/Physrevlett.118.247701 |
0.567 |
|
| 2017 |
Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. Acs Nano. PMID 28414214 DOI: 10.1021/Acsnano.7B01306 |
0.619 |
|
| 2017 |
Gaskins JT, Hopkins PE, Merrill DR, Bauers SR, Hadland E, Johnson DC, Koh D, Yum JH, Banerjee S, Nordell BJ, Paquette MM, Caruso AN, Lanford WA, Henry P, Ross L, et al. Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride Ecs Journal of Solid State Science and Technology. 6: N189-N208. DOI: 10.1149/2.0091710Jss |
0.306 |
|
| 2017 |
Hsieh C, Chang Y, Chen Y, Shahrjerdi D, Banerjee SK. Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays Ecs Journal of Solid State Science and Technology. 6: N143-N147. DOI: 10.1149/2.0041709Jss |
0.666 |
|
| 2017 |
Mou X, Register LF, MacDonald AH, Banerjee SK. Bilayer Pseudospin Junction Transistor (BiSJT) for “Beyond-CMOS” Logic Ieee Transactions On Electron Devices. 64: 4759-4762. DOI: 10.1109/Ted.2017.2751560 |
0.361 |
|
| 2017 |
Hsu W, Wen F, Wang X, Wang Y, Dolocan A, Roy A, Kim T, Tutuc E, Banerjee SK. Laser Spike Annealing for Shallow Junctions in Ge CMOS Ieee Transactions On Electron Devices. 64: 346-352. DOI: 10.1109/Ted.2016.2635625 |
0.599 |
|
| 2017 |
Hsieh C, Chang Y, Jeon Y, Roy A, Shahrjerdi D, Banerjee SK. Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector Ieee Electron Device Letters. 38: 871-874. DOI: 10.1109/Led.2017.2710955 |
0.587 |
|
| 2017 |
Kang S, Mou X, Fallahazad B, Prasad N, Wu X, Valsaraj A, Movva HCP, Kim K, Tutuc E, Register LF, Banerjee SK. Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications Journal of Physics D: Applied Physics. 50: 383002. DOI: 10.1088/1361-6463/Aa8047 |
0.6 |
|
| 2017 |
Mohammed OB, Movva HCP, Prasad N, Valsaraj A, Kang S, Corbet CM, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. ReS2-based interlayer tunnel field effect transistor Journal of Applied Physics. 122: 245701. DOI: 10.1063/1.5004038 |
0.612 |
|
| 2017 |
Roy A, Ghosh R, Rai A, Sanne A, Kim K, Movva HCP, Dey R, Pramanik T, Chowdhury S, Tutuc E, Banerjee SK. Intra-domain periodic defects in monolayer MoS2 Applied Physics Letters. 110: 201905. DOI: 10.1063/1.4983789 |
0.579 |
|
| 2017 |
Ahn J, Chou H, Banerjee SK. Graphene-Al 2 O 3 -silicon heterojunction solar cells on flexible silicon substrates Journal of Applied Physics. 121: 163105. DOI: 10.1063/1.4981880 |
0.38 |
|
| 2017 |
Pramanik T, Roy A, Dey R, Rai A, Guchhait S, Movva HC, Hsieh C, Banerjee SK. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy Journal of Magnetism and Magnetic Materials. 437: 72-77. DOI: 10.1016/J.Jmmm.2017.04.039 |
0.76 |
|
| 2017 |
Ghosh B, Dey R, Register LF, Banerjee SK. A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator Journal of Computational Electronics. 16: 120-126. DOI: 10.1007/S10825-016-0951-X |
0.333 |
|
| 2016 |
Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 27526261 DOI: 10.1021/Acs.Nanolett.6B03255 |
0.767 |
|
| 2016 |
Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters. PMID 27416362 DOI: 10.1021/Acs.Nanolett.6B01646 |
0.798 |
|
| 2016 |
Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Physical Review Letters. 116: 086601. PMID 26967432 DOI: 10.1103/Physrevlett.116.086601 |
0.78 |
|
| 2016 |
Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. Acs Applied Materials & Interfaces. PMID 26939890 DOI: 10.1021/Acsami.6B00961 |
0.791 |
|
| 2016 |
McCreary A, Ghosh R, Amani M, Wang J, Duerloo KN, Sharma A, Jarvis K, Reed EJ, Dongare A, Banerjee SK, Terrones M, Namburu RR, Dubey M. Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS2 Grown by Vapor Transport. Acs Nano. PMID 26881920 DOI: 10.1021/Acsnano.5B04550 |
0.342 |
|
| 2016 |
Kim K, Yankowitz MA, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 26859527 DOI: 10.1021/Acs.Nanolett.5B05263 |
0.793 |
|
| 2016 |
Rahimi S, Ghosh R, Kim S, Dodabalapur A, Banerjee S, Akinwande D. The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors Applied Sciences. 6: 236. DOI: 10.3390/App6090236 |
0.589 |
|
| 2016 |
Ghosh R, Kim JS, Roy A, Chou H, Vu M, Banerjee SK, Akinwande D. Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2 Journal of Materials Research. 31: 917-922. DOI: 10.1557/Jmr.2016.7 |
0.304 |
|
| 2016 |
Hsu W, Wang X, Wen F, Wang Y, Dolocan A, Kim T, Tutuc E, Banerjee SK. High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing Ieee Electron Device Letters. 37: 1088-1091. DOI: 10.1109/Led.2016.2587829 |
0.592 |
|
| 2016 |
Hsu W, Kim T, Chou H, Rai A, Banerjee SK. Novel BF+ Implantation for High Performance Ge pMOSFETs Ieee Electron Device Letters. 37: 954-957. DOI: 10.1109/Led.2016.2578327 |
0.305 |
|
| 2016 |
Hsieh C, Roy A, Chang Y, Shahrjerdi D, Banerjee SK. A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems Applied Physics Letters. 109: 223501. DOI: 10.1063/1.4971188 |
0.604 |
|
| 2016 |
Crum DM, Valsaraj A, David JK, Register LF, Banerjee SK. Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations Journal of Applied Physics. 120: 224301. DOI: 10.1063/1.4970913 |
0.323 |
|
| 2016 |
Dey R, Roy A, Pramanik T, Guchhait S, Sonde S, Rai A, Register LF, Banerjee SK. Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit Journal of Applied Physics. 120: 164301. DOI: 10.1063/1.4965861 |
0.331 |
|
| 2016 |
Valsaraj A, Register LF, Tutuc E, Banerjee SK. DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs Journal of Applied Physics. 120: 134310. DOI: 10.1063/1.4964115 |
0.619 |
|
| 2016 |
Hsu W, Kim T, Benítez-Lara A, Chou H, Dolocan A, Rai A, Josefina Arellano-Jiménez M, Palard M, José-Yacamán M, Banerjee SK. Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F Journal of Applied Physics. 120. DOI: 10.1063/1.4955312 |
0.318 |
|
| 2016 |
Corbet CM, Sonde SS, Tutuc E, Banerjee SK. Improved contact resistance in ReSe2 thin film field-effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4947468 |
0.64 |
|
| 2016 |
Ahn J, Chou H, Koh D, Kim T, Roy A, Song J, Banerjee SK. Nanoscale doping of compound semiconductors by solid phase dopant diffusion Applied Physics Letters. 108. DOI: 10.1063/1.4944888 |
0.404 |
|
| 2016 |
Kang S, Movva HCP, Sanne A, Rai A, Banerjee SK. Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors Journal of Applied Physics. 119: 124502. DOI: 10.1063/1.4944599 |
0.361 |
|
| 2016 |
Trivedi T, Sonde S, Movva HCP, Banerjee SK. Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators Journal of Applied Physics. 119. DOI: 10.1063/1.4941265 |
0.804 |
|
| 2016 |
Kim TW, Kim JS, Kim DK, Shin SH, Park WS, Banerjee S, Kim DH. High-frequency characteristics of Lg = 60 nm InGaAs MOS high-electron-mobilitytransistor (MOS-HEMT) with Al2O3 gate insulator Electronics Letters. 52: 870-872. DOI: 10.1049/El.2015.3573 |
0.35 |
|
| 2016 |
Son SW, Park JH, Baek JM, Kim JS, Kim DK, Shin SH, Banerjee SK, Lee JH, Kim TW, Kim DH. Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack Solid-State Electronics. 123: 63-67. DOI: 10.1016/J.Sse.2016.06.003 |
0.396 |
|
| 2016 |
Bhatti AA, Hsieh CC, Roy A, Register LF, Banerjee SK. First-principles simulation of oxygen vacancy migration in HfO x , CeO x , and at their interfaces for applications in resistive random-access memories Journal of Computational Electronics. 15: 741-748. DOI: 10.1007/S10825-016-0847-9 |
0.325 |
|
| 2015 |
Chang HY, Yogeesh MN, Ghosh R, Rai A, Sanne A, Yang S, Lu N, Banerjee SK, Akinwande D. Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime. Advanced Materials (Deerfield Beach, Fla.). PMID 26707841 DOI: 10.1002/Adma.201504309 |
0.31 |
|
| 2015 |
Park JH, Movva HC, Chagarov E, Sardashti K, Chou H, Kwak I, Hu KT, Fullerton-Shirey SK, Choudhury P, Banerjee SK, Kummel AC. In-Situ Observation of Initial Stage in Dielectric Growth, and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces. Nano Letters. PMID 26393281 DOI: 10.1021/Acs.Nanolett.5B02429 |
0.796 |
|
| 2015 |
Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Acs Nano. PMID 26343531 DOI: 10.1021/Acsnano.5B04611 |
0.815 |
|
| 2015 |
Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S. Radio Frequency Transistors and Circuits Based on CVD MoS2. Nano Letters. 15: 5039-45. PMID 26134588 DOI: 10.1021/Acs.Nanolett.5B01080 |
0.332 |
|
| 2015 |
Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters. PMID 26091062 DOI: 10.1021/Acs.Nanolett.5B00314 |
0.806 |
|
| 2015 |
Roy A, Guchhait S, Dey R, Pramanik T, Hsieh CC, Rai A, Banerjee SK. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films. Acs Nano. 9: 3772-9. PMID 25848950 DOI: 10.1021/Nn5065716 |
0.318 |
|
| 2015 |
Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. Acs Nano. 9: 363-70. PMID 25514177 DOI: 10.1021/Nn505354A |
0.645 |
|
| 2015 |
Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y |
0.799 |
|
| 2015 |
Hsu W, Mantey J, Register LF, Banerjee SK. On the Electrostatic Control of Gate-Normal-Tunneling Field-Effect Transistors Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2434615 |
0.357 |
|
| 2015 |
Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737 |
0.805 |
|
| 2015 |
Tutuc E, Fallahazad B, Kang S, Lee K, Kim K, Movva HCP, Mou X, Corbet CM, Register LF, Banerjee SK, Taniguchi T, Watanabe K. Gate tunable resonant tunneling in graphene-based heterostructures and device applications Device Research Conference - Conference Digest, Drc. 2015: 269-270. DOI: 10.1109/DRC.2015.7175677 |
0.31 |
|
| 2015 |
Roy U, Kencke DL, Pramanik T, Register LF, Banerjee SK. Write error rate in spin-transfer-torque random access memory including micromagnetic effects Device Research Conference - Conference Digest, Drc. 2015: 147-148. DOI: 10.1109/DRC.2015.7175598 |
0.684 |
|
| 2015 |
Mou X, Register LF, Macdonald AH, Banerjee SK. Quantum transport simulation of exciton condensate transport physics in a double-layer graphene system Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.235413 |
0.37 |
|
| 2015 |
Valsaraj A, Chang J, Rai A, Register LF, Banerjee SK. Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide 2d Materials. 2. DOI: 10.1088/2053-1583/2/4/045009 |
0.402 |
|
| 2015 |
Koh D, Shin SH, Ahn J, Sonde S, Kwon HM, Orzali T, Kim DH, Kim TW, Banerjee SK. Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device Applied Physics Letters. 107. DOI: 10.1063/1.4935248 |
0.341 |
|
| 2015 |
Hsieh CC, Roy A, Rai A, Chang YF, Banerjee SK. Characteristics and mechanism study of cerium oxide based random access memories Applied Physics Letters. 106. DOI: 10.1063/1.4919442 |
0.323 |
|
| 2015 |
Roy U, Dey R, Pramanik T, Ghosh B, Register LF, Banerjee SK. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator Journal of Applied Physics. 117. DOI: 10.1063/1.4918900 |
0.319 |
|
| 2015 |
Sanne A, Ghosh R, Rai A, Movva HCP, Sharma A, Rao R, Mathew L, Banerjee SK. Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates Applied Physics Letters. 106. DOI: 10.1063/1.4907885 |
0.443 |
|
| 2014 |
Hilali MM, Saha S, Onyegam E, Rao R, Mathew L, Banerjee SK. Light trapping in ultrathin 25 μm exfoliated Si solar cells. Applied Optics. 53: 6140-7. PMID 25322089 DOI: 10.1364/Ao.53.006140 |
0.41 |
|
| 2014 |
Corbet CM, McClellan C, Kim K, Sonde S, Tutuc E, Banerjee SK. Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms. Acs Nano. 8: 10480-5. PMID 25259872 DOI: 10.1021/Nn5038509 |
0.65 |
|
| 2014 |
Saha S, Hilali MM, Onyegam EU, Sonde S, Rao RA, Mathew L, Upadhyaya A, Banerjee SK. Improved cleaning process for textured ~25 μm flexible mono-crystalline silicon heterojunction solar cells with metal backing Ecs Journal of Solid State Science and Technology. 3: Q142-Q145. DOI: 10.1149/2.0041407Jss |
0.334 |
|
| 2014 |
Fahad HM, Hussain AM, Sevilla Torres GA, Banerjee SK, Hussain MM. Group IV nanotube transistors for next generation ubiquitous computing Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2050096 |
0.399 |
|
| 2014 |
Koh D, Yum JH, Banerjee SK, Hudnall TW, Bielawski C, Lanford WA, French BL, French M, Henry P, Li H, Kuhn M, King SW. Investigation of atomic layer deposited Beryllium oxide material properties for high-k dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4867436 |
0.379 |
|
| 2014 |
Zhai Y, Mathew L, Rao R, Palard M, Chopra S, Ekerdt JG, Register LF, Banerjee SK. High-performance vertical gate-all-around silicon nanowire FET with high-κ/metal gate Ieee Transactions On Electron Devices. 61: 3896-3900. DOI: 10.1109/Ted.2014.2353658 |
0.453 |
|
| 2014 |
Hsu W, Mantey J, Hsieh CC, Roy A, Banerjee SK. Thin, relaxed Si1-xGex virtual substrates on Si grown using C-doped Ge buffers Applied Physics Letters. 105. DOI: 10.1063/1.4898697 |
0.433 |
|
| 2014 |
Chowdhury SF, Sonde S, Rahimi S, Tao L, Banerjee SK, Akinwande D. Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment Applied Physics Letters. 105: 33117. DOI: 10.1063/1.4891364 |
0.322 |
|
| 2014 |
Koh D, Kwon HM, Kim TW, Kim DH, Hudnall TW, Bielawski CW, Maszara W, Veksler D, Gilmer D, Kirsch PD, Banerjee SK. Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer Applied Physics Letters. 104. DOI: 10.1063/1.4871504 |
0.414 |
|
| 2014 |
Onyegam EU, Sarkar D, Hilali MM, Saha S, Mathew L, Rao RA, Smith RS, Xu D, Jawarani D, Garcia R, Ainom M, Banerjee SK. Realization of dual-heterojunction solar cells on ultra-thin ∼ 25 μ m, flexible silicon substrates Applied Physics Letters. 104. DOI: 10.1063/1.4871503 |
0.393 |
|
| 2014 |
Chang J, Larentis S, Tutuc E, Register LF, Banerjee SK. Atomistic simulation of the electronic states of adatoms in monolayer MoS2 Applied Physics Letters. 104. DOI: 10.1063/1.4870767 |
0.578 |
|
| 2014 |
Chang J, Register LF, Banerjee SK. Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide- semiconductor field effect transistors Journal of Applied Physics. 115. DOI: 10.1063/1.4866872 |
0.369 |
|
| 2014 |
Sanne A, Movva HCP, Kang S, McClellan C, Corbet CM, Banerjee SK. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors Applied Physics Letters. 104. DOI: 10.1063/1.4866338 |
0.378 |
|
| 2014 |
Ramón ME, Movva HCP, Fahad Chowdhury S, Parrish KN, Rai A, Magnuson CW, Ruoff RS, Akinwande D, Banerjee SK. Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications Applied Physics Letters. 104. DOI: 10.1063/1.4866332 |
0.345 |
|
| 2014 |
Johnson DW, Yum JH, Hudnall TW, Mushinski RM, Bielawski CW, Roberts JC, Wang WE, Banerjee SK, Harris HR. Characterization of ALD beryllium oxide as a potential high-k gate dielectric for low-leakage AlGaN/GaN MOSHEMTs Journal of Electronic Materials. 43: 151-154. DOI: 10.1007/S11664-013-2754-1 |
0.452 |
|
| 2013 |
Saha S, Onyegam EU, Sarkar D, Hilali MM, Rao RA, Mathew L, Jawarani D, Xu D, Smith RS, Das UK, Fossum JG, Banerjee SK. Exfoliated ∼25μm Si foil for solar cells with improved light-trapping Materials Research Society Symposium Proceedings. 1493: 51-58. DOI: 10.1557/Opl.2013.222 |
0.387 |
|
| 2013 |
Yum JH, Shin HS, Mushinski RM, Hudnall TW, Oh J, Loh WY, Bielawski CW, Bersuker G, Banerjee SK, Wang WE, Kirsch PD, Jammy R. A comparative study of gate first and last Si MOSFETs fabrication processes using ALD beryllium oxide as an interface passivation layer 2013 International Symposium On Vlsi Technology, Systems and Application, Vlsi-Tsa 2013. DOI: 10.1109/VLSI-TSA.2013.6545611 |
0.317 |
|
| 2013 |
Guchhait S, Ohldag H, Arenholz E, Ferrer DA, Mehta A, Banerjee SK. Magnetic ordering of implanted Mn in HOPG substrates Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.174425 |
0.318 |
|
| 2013 |
Hilali MM, Yang S, Miller M, Xu F, Banerjee SK, Sreenivasan SV. Erratum: Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures (Nanotechnology (2012) 23 (405203)) Nanotechnology. 24: 379502. DOI: 10.1088/0957-4484/24/37/379502 |
0.312 |
|
| 2013 |
Chang J, Register LF, Banerjee SK. Atomistic full-band simulations of monolayer MoS2 transistors Applied Physics Letters. 103. DOI: 10.1063/1.4837455 |
0.35 |
|
| 2013 |
Shin HS, Yum JH, Johnson DW, Harris HR, Hudnall TW, Oh J, Kirsch P, Wang WE, Bielawski CW, Banerjee SK, Lee JC, Lee HD. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4833815 |
0.407 |
|
| 2013 |
Khalil MS, Stoutimore MJA, Gladchenko S, Holder AM, Musgrave CB, Kozen AC, Rubloff G, Liu YQ, Gordon RG, Yum JH, Banerjee SK, Lobb CJ, Osborn KD. Evidence for hydrogen two-level systems in atomic layer deposition oxides Applied Physics Letters. 103. DOI: 10.1063/1.4826253 |
0.337 |
|
| 2013 |
Hsu W, Mantey J, Register LF, Banerjee SK. Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor Applied Physics Letters. 103. DOI: 10.1063/1.4819458 |
0.428 |
|
| 2013 |
Jadaun P, Movva HCP, Register LF, Banerjee SK. Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications Journal of Applied Physics. 114. DOI: 10.1063/1.4817498 |
0.323 |
|
| 2013 |
Mantey J, Hsu W, James J, Onyegam EU, Guchhait S, Banerjee SK. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer Applied Physics Letters. 102. DOI: 10.1063/1.4807500 |
0.418 |
|
| 2013 |
Saha S, Hilali MM, Onyegam EU, Sarkar D, Jawarani D, Rao RA, Mathew L, Smith RS, Xu D, Das UK, Sopori B, Banerjee SK. Single heterojunction solar cells on exfoliated flexible ∼25 μm thick mono-crystalline silicon substrates Applied Physics Letters. 102. DOI: 10.1063/1.4803174 |
0.353 |
|
| 2013 |
Roy A, Guchhait S, Sonde S, Dey R, Pramanik T, Rai A, Movva HCP, Colombo L, Banerjee SK. Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4803018 |
0.368 |
|
| 2013 |
Ramón ME, Akyol T, Shahrjerdi D, Young CD, Cheng J, Register LF, Banerjee SK. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric Applied Physics Letters. 102. DOI: 10.1063/1.4776678 |
0.647 |
|
| 2013 |
Onyegam EU, Sarkar D, Hilali M, Saha S, Rao RA, Mathew L, Jawarani D, Mantey J, Ainom M, Garcia R, James W, Banerjee SK. Exfoliated, thin, flexible germanium heterojunction solar cell with record FF ¼58.1% Solar Energy Materials and Solar Cells. 111: 206-211. DOI: 10.1016/J.Solmat.2013.01.002 |
0.359 |
|
| 2013 |
Park MS, Kim Y, Lee KT, Kang CY, Min BG, Oh J, Majhi P, Tseng HH, Lee JC, Banerjee SK, Lee JS, Jammy R, Jeong YH. Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs Microelectronic Engineering. 112: 80-83. DOI: 10.1016/J.Mee.2013.04.041 |
0.445 |
|
| 2013 |
Min KS, Kang SH, Kim JK, Yum JH, Jhon YI, Hudnall TW, Bielawski CW, Banerjee SK, Bersuker G, Jhon MS, Yeom GY. Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III-V MOS devices Microelectronic Engineering. 110: 121-125. DOI: 10.1016/J.Mee.2013.03.170 |
0.402 |
|
| 2012 |
Zhai Y, Mathew L, Rao R, Xu D, Banerjee SK. High-performance flexible thin-film transistors exfoliated from bulk wafer. Nano Letters. 12: 5609-15. PMID 23092185 DOI: 10.1021/Nl302735F |
0.402 |
|
| 2012 |
Hilali MM, Yang S, Miller M, Xu F, Banerjee S, Sreenivasan SV. Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures. Nanotechnology. 23: 405203. PMID 22997169 DOI: 10.1088/0957-4484/23/40/405203 |
0.343 |
|
| 2012 |
Kim S, Jo I, Dillen DC, Ferrer DA, Fallahazad B, Yao Z, Banerjee SK, Tutuc E. Direct measurement of the Fermi energy in graphene using a double-layer heterostructure. Physical Review Letters. 108: 116404. PMID 22540496 DOI: 10.1103/Physrevlett.108.116404 |
0.583 |
|
| 2012 |
Nah J, Dillen DC, Varahramyan KM, Banerjee SK, Tutuc E. Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires. Nano Letters. 12: 108-12. PMID 22111925 DOI: 10.1021/Nl2030695 |
0.63 |
|
| 2012 |
Zhai Y, Palard M, Mathew L, Hussain MM, Willson CG, Tutuc E, Banerjee SK. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays Micro and Nanosystems. 4: 333-338. DOI: 10.2174/1876402911204040333 |
0.587 |
|
| 2012 |
Yum JH, Oh J, Hudnall TW, Bielawski CW, Bersuker G, Banerjee SK. Comparative study of SiO 2, Al 2O 3, and BeO ultrathin interfacial barrier layers in Si metal-oxide-semiconductor devices Active and Passive Electronic Components. 2012. DOI: 10.1155/2012/359580 |
0.492 |
|
| 2012 |
Yum JH, Bersuker G, Hudnall TW, Bielawski CW, Kirsch P, Banerjee SK. A study of novel ALD beryllium oxide as an interface passivation layer for Si MOS devices International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. DOI: 10.1109/VLSI-TSA.2012.6210153 |
0.324 |
|
| 2012 |
Ramn ME, Parrish KN, Chowdhury SF, Magnuson CW, Movva HCP, Ruoff RS, Banerjee SK, Akinwande D. Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency Ieee Transactions On Nanotechnology. 11: 877-883. DOI: 10.1109/Tnano.2012.2203826 |
0.309 |
|
| 2012 |
David JK, Register LF, Banerjee SK. Semiclassical Monte Carlo analysis of graphene FETs Ieee Transactions On Electron Devices. 59: 976-982. DOI: 10.1109/Ted.2012.2184116 |
0.348 |
|
| 2012 |
Sarkar D, Onyegam EU, Saha S, Mathew L, Rao RA, Hilali MM, Smith RS, Xu D, Jawarani D, Garcia R, Stout R, Gurmu A, Ainom M, Fossum JG, Banerjee SK. Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC-Vol2.2013.6656713 |
0.337 |
|
| 2012 |
Mantey J, Hsu W, Jamil M, Onyegam EU, Tutuc E, Banerjee SK. Germanium nMOSFETs with GeO 2 passivation and n+/p junctions formed by spin-on dopants 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 22-23. DOI: 10.1109/ISTDM.2012.6222438 |
0.377 |
|
| 2012 |
Cervantes-González JC, Ahn D, Zheng X, Banerjee SK, Jacome AT, Campbell JC, Zaldivar-Huerta IE. Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides Applied Physics Letters. 101. DOI: 10.1063/1.4773212 |
0.35 |
|
| 2012 |
Yum JH, Shin HS, Hill R, Oh J, Lee HD, Mushinski RM, Hudnall TW, Bielawski CW, Banerjee SK, Loh WY, Wang WE, Kirsch P. A study of capping layers for sulfur monolayer doping on III-V junctions Applied Physics Letters. 101. DOI: 10.1063/1.4772641 |
0.411 |
|
| 2012 |
Chang J, Register LF, Banerjee SK. Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 112. DOI: 10.1063/1.4770324 |
0.38 |
|
| 2012 |
Movva HCP, Ramón ME, Corbet CM, Sonde S, Fahad Chowdhury S, Carpenter G, Tutuc E, Banerjee SK. Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions Applied Physics Letters. 101. DOI: 10.1063/1.4765658 |
0.634 |
|
| 2012 |
Lei M, Yum JH, Price J, Hudnall TW, Bielawski CW, Banerjee SK, Lysaght PS, Bersuker G, Downer MC. Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100) Applied Physics Letters. 100. DOI: 10.1063/1.3697646 |
0.352 |
|
| 2012 |
Yum JH, Bersuker G, Oh J, Banerjee SK. Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability Applied Physics Letters. 100. DOI: 10.1063/1.3679720 |
0.451 |
|
| 2012 |
Roy U, Seinige H, Ferdousi F, Mantey J, Tsoi M, Banerjee SK. Spin-transfer-torque switching in spin valve structures with perpendicular, canted, and in-plane magnetic anisotropies Journal of Applied Physics. 111. DOI: 10.1063/1.3677311 |
0.723 |
|
| 2012 |
Zhai Y, Mathew L, Rao R, Xu D, Banerjee SK. Correction to High-Performance Flexible Thin-Film Transistors Exfoliated from Bulk Wafer Nano Letters. 13: 329-329. DOI: 10.1021/Nl304593R |
0.31 |
|
| 2012 |
Tao L, Lee J, Holt M, Chou H, McDonnell SJ, Ferrer DA, Babenco MG, Wallace RM, Banerjee SK, Ruoff RS, Akinwande D. Uniform wafer-scale chemical vapor deposition of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer Journal of Physical Chemistry C. 116: 24068-24074. DOI: 10.1021/Jp3068848 |
0.366 |
|
| 2012 |
Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates Thin Solid Films. 520: 3091-3095. DOI: 10.1016/J.Tsf.2011.11.053 |
0.438 |
|
| 2012 |
Jadaun P, Sahu BR, Register LF, Banerjee SK. Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects Solid State Communications. 152: 1497-1502. DOI: 10.1016/J.Ssc.2012.04.044 |
0.304 |
|
| 2012 |
Lei M, Yum JH, Banerjee SK, Bersuker G, Downer MC. Band offsets of atomic layer deposited Al 2O 3 and HfO 2 on Si measured by linear and nonlinear internal photoemission Physica Status Solidi (B) Basic Research. 249: 1160-1165. DOI: 10.1002/Pssb.201100744 |
0.394 |
|
| 2011 |
Jadaun P, Banerjee SK, Register LF, Sahu B. Density functional theory based study of graphene and dielectric oxide interfaces. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 505503. PMID 22119858 DOI: 10.1088/0953-8984/23/50/505503 |
0.348 |
|
| 2011 |
Ramón ME, Gupta A, Corbet C, Ferrer DA, Movva HC, Carpenter G, Colombo L, Bourianoff G, Doczy M, Akinwande D, Tutuc E, Banerjee SK. CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films. Acs Nano. 5: 7198-204. PMID 21800895 DOI: 10.1021/Nn202012M |
0.795 |
|
| 2011 |
Jo I, Hsu IK, Lee YJ, Sadeghi MM, Kim S, Cronin S, Tutuc E, Banerjee SK, Yao Z, Shi L. Low-frequency acoustic phonon temperature distribution in electrically biased graphene. Nano Letters. 11: 85-90. PMID 21126050 DOI: 10.1021/Nl102858C |
0.591 |
|
| 2011 |
Cervantes-González JC, Ahn D, Zheng X, Banerjee SK, Jacome AT, Campbell JC, Zaldivar-Huerta IE. CMOS-compatible waveguide-integrated Ge metal-semiconductor-metal photodetectors The International Commission For Optics. 8011. DOI: 10.1117/12.902182 |
0.344 |
|
| 2011 |
Yum JH, Akyol T, Ferrer DA, Lee JC, Banerjee SK, Lei M, Downer M, Hudnall TW, Bielawski CW, Bersuker G. Comparison of the self-cleaning effects and electrical characteristics of BeO and Al 2O 3 deposited as an interface passivation layer on GaAs MOS devices Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3628546 |
0.443 |
|
| 2011 |
Lee T, Choi K, Ando T, Park DG, Gribelyuk MA, Kwon U, Banerjee SK. Mechanism of VFB / VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 21209. DOI: 10.1116/1.3562974 |
0.401 |
|
| 2011 |
Ferdousi F, Jamil M, Liu H, Kaur S, Ferrer D, Colombo L, Banerjee SK. Fullerene-based hybrid devices for high-density nonvolatile memory Ieee Transactions On Nanotechnology. 10: 572-575. DOI: 10.1109/Tnano.2010.2053215 |
0.764 |
|
| 2011 |
Yum JH, Bersuker G, Akyol T, Ferrer DA, Lei M, Park KW, Hudnall TW, Downer MC, Bielawski CW, Yu ET, Price J, Lee JC, Banerjee SK. Epitaxial ALD BeO: Efficient oxygen diffusion barrier for EOT scaling and reliability improvement Ieee Transactions On Electron Devices. 58: 4384-4392. DOI: 10.1109/Ted.2011.2170073 |
0.443 |
|
| 2011 |
Lee SH, Majhi P, Ferrer DA, Hung PY, Huang J, Oh J, Loh WY, Sassman B, Min BG, Tseng HH, Harris R, Bersuker G, Kirsch PD, Jammy R, Banerjee SK. Impact of millisecond flash-assisted rapid thermal annealing on SiGe heterostructure channel pMOSFETs with a high-k/metal gate Ieee Transactions On Electron Devices. 58: 2917-2923. DOI: 10.1109/Ted.2011.2159862 |
0.559 |
|
| 2011 |
Lee SH, Nainani A, Oh J, Jeon K, Kirsch PD, Majhi P, Register LF, Banerjee SK, Jammy R. On-state performance enhancement and channel-direction-dependent performance of a biaxial compressive strained Si0.5Ge0.5 quantum-well pMOSFET along 〈 110 〉 and 〈 100 〉 channel directions Ieee Transactions On Electron Devices. 58: 985-995. DOI: 10.1109/Ted.2011.2105876 |
0.505 |
|
| 2011 |
Lee T, Banerjee SK. Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated $\hbox{HfO}_{2}$ Gate-Oxide n-MOS Devices Ieee Transactions On Electron Devices. 58: 562-566. DOI: 10.1109/Ted.2010.2091453 |
0.39 |
|
| 2011 |
Liu KM, Register LF, Banerjee SK. Quantum transport simulation of strain and orientation effects in sub-20 nm silicon-on-insulator FinFETs Ieee Transactions On Electron Devices. 58: 4-10. DOI: 10.1109/Ted.2010.2084090 |
0.316 |
|
| 2011 |
Jamil M, Mantey J, Onyegam EU, Carpenter GD, Tutuc E, Banerjee SK. High-Performance Ge nMOSFETs With $\hbox{n}^{+}\hbox{-} \hbox{p}$ Junctions Formed by “Spin-On Dopant” Ieee Electron Device Letters. 32: 1203-1205. DOI: 10.1109/Led.2011.2160142 |
0.638 |
|
| 2011 |
Register LF, Hasan MM, Banerjee SK. Stepped broken-gap heterobarrier tunneling field-effect transistor for ultralow power and high speed Ieee Electron Device Letters. 32: 743-745. DOI: 10.1109/Led.2011.2126038 |
0.385 |
|
| 2011 |
Sahu B, Min H, Banerjee SK. Edge Saturation effects on the magnetism and band gaps in multilayer graphene ribbons and flakes Physical Review B. 84: 75481. DOI: 10.1103/Physrevb.84.075481 |
0.329 |
|
| 2011 |
Basu D, Register LF, MacDonald AH, Banerjee SK. Effect of interlayer bare tunneling on electron-hole coherence in graphene bilayers Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035449 |
0.349 |
|
| 2011 |
Guchhait S, Jamil M, Ohldag H, Mehta A, Arenholz E, Lian G, Lifatou A, Ferrer DA, Markert JT, Colombo L, Banerjee SK. Ferromagnetism in Mn-implanted epitaxially grown Ge on Si(100) Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.024432 |
0.368 |
|
| 2011 |
Kim S, Jo I, Nah J, Yao Z, Banerjee SK, Tutuc E. Coulomb drag of massless fermions in graphene Physical Review B. 83. DOI: 10.1103/Physrevb.83.161401 |
0.599 |
|
| 2011 |
Reddy D, Register LF, Carpenter GD, Banerjee SK. Graphene field-effect transistors Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/31/313001 |
0.42 |
|
| 2011 |
Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric Applied Physics Letters. 99. DOI: 10.1063/1.3614446 |
0.461 |
|
| 2011 |
Ferrer DA, Guchhait S, Liu H, Ferdousi F, Corbet C, Xu H, Doczy M, Bourianoff G, Mathew L, Rao R, Saha S, Ramon M, Ganguly S, Markert JT, Banerjee SK. Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets Journal of Applied Physics. 110. DOI: 10.1063/1.3608109 |
0.773 |
|
| 2011 |
Yum JH, Akyol T, Lei M, Hudnall T, Bersuker G, Downer M, Bielawski CW, Lee JC, Banerjee SK. Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices Journal of Applied Physics. 109. DOI: 10.1063/1.3553872 |
0.455 |
|
| 2011 |
David JK, Register LF, Banerjee SK. 3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs Solid-State Electronics. 61: 7-12. DOI: 10.1016/J.Sse.2010.12.013 |
0.406 |
|
| 2011 |
Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. A study of highly crystalline novel beryllium oxide film using atomic layer deposition Journal of Crystal Growth. 334: 126-133. DOI: 10.1016/J.Jcrysgro.2011.08.040 |
0.459 |
|
| 2010 |
Lee T, Banerjee SK. Device characteristics of HfON charge-trap layer nonvolatile memory Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 1005-1010. DOI: 10.1116/1.3481140 |
0.408 |
|
| 2010 |
Liu E, Jain N, Varahramyan KM, Nah J, Banerjee SK, Tutuc E. Role of Metal–Semiconductor Contact in Nanowire Field-Effect Transistors Ieee Transactions On Nanotechnology. 9: 237-242. DOI: 10.1109/Tnano.2009.2027119 |
0.635 |
|
| 2010 |
Chang J, Kapoor AK, Register LF, Banerjee SK. Analytical model of short-channel double-gate JFETs Ieee Transactions On Electron Devices. 57: 1846-1855. DOI: 10.1109/Ted.2010.2051193 |
0.329 |
|
| 2010 |
Reddy D, Register LF, Tutuc E, Banerjee SK. Bilayer pseudospin field-effect transistor: Applications to boolean logic Ieee Transactions On Electron Devices. 57: 755-764. DOI: 10.1109/Ted.2010.2041280 |
0.594 |
|
| 2010 |
Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors Ieee Transactions On Electron Devices. 57: 491-495. DOI: 10.1109/Ted.2009.2037406 |
0.749 |
|
| 2010 |
Jamil M, Oh J, Ramon M, Kaur S, Majhi P, Tutuc E, Banerjee SK. High-Mobility TaN/ $\hbox{Al}_{2}\hbox{O}_{3}$ /Ge(111) n-MOSFETs With RTO-Grown Passivation Layer Ieee Electron Device Letters. 31: 1208-1210. DOI: 10.1109/Led.2010.2071373 |
0.469 |
|
| 2010 |
Li F, Lee S, Fang Z, Majhi P, Zhang Q, Banerjee SK, Datta S. Flicker-Noise Improvement in 100-nm $L_{g}\ \hbox{Si}_{0.50}\hbox{Ge}_{0.50}$ Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer Ieee Electron Device Letters. 31: 47-49. DOI: 10.1109/Led.2009.2035140 |
0.58 |
|
| 2010 |
Sahu B, Min H, Banerjee SK. Effects of edge magnetism and external electric field on energy gaps in multilayer graphene nanoribbons Physical Review B. 82: 115426. DOI: 10.1103/Physrevb.82.115426 |
0.33 |
|
| 2010 |
Basu D, Register LF, Reddy D, MacDonald AH, Banerjee SK. Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.075409 |
0.385 |
|
| 2010 |
Sahu B, Min H, Banerjee SK. Effects of magnetism and electric field on the energy gap of bilayer graphene nanoflakes Physical Review B. 81: 45414. DOI: 10.1103/Physrevb.81.045414 |
0.313 |
|
| 2010 |
Jamil M, Liu ES, Ferdousi F, Donnelly JP, Tutuc E, Banerjee SK. Effects of Si-cap thickness and temperature on device performance of Si/Ge1-xCx/Si p-MOSFETs Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/4/045005 |
0.834 |
|
| 2010 |
Shahrjerdi D, Nah J, Hekmatshoar B, Akyol T, Ramon M, Tutuc E, Banerjee SK. Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric Applied Physics Letters. 97. DOI: 10.1063/1.3521284 |
0.643 |
|
| 2010 |
Liu H, Ferrer DA, Ferdousi F, Banerjee SK. Retraction: “Nonvolatile memory with Co–SiO2 core-shell nanocrystals as charge storage nodes in floating gate” [Appl. Phys. Lett. 95, 203112 (2009)] Applied Physics Letters. 96: 269902. DOI: 10.1063/1.3456728 |
0.713 |
|
| 2010 |
Ghosh B, Liu H, Winstead B, Foisy MC, Banerjee SK. Retention modeling of nanocrystalline flash memories: A Monte Carlo approach Solid-State Electronics. 54: 1295-1299. DOI: 10.1016/J.Sse.2010.04.005 |
0.329 |
|
| 2009 |
Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science (New York, N.Y.). 324: 1312-4. PMID 19423775 DOI: 10.1126/Science.1171245 |
0.6 |
|
| 2009 |
Kim Y, Kang CY, Lee SH, Majhi P, Min BG, Lee KS, Ahn D, Banerjee SK. Role of Boron TED and Series Resistance in SiGe/Si Heterojunction pMOSFETs Mrs Proceedings. 1155: 91-96. DOI: 10.1557/Proc-1155-C02-05 |
0.417 |
|
| 2009 |
Nah J, Varahramyan KM, Liu ES, Opotowsky A, Ferrer D, Banerjee SK, Tutuc E. Growth and electronic properties of Ge-SixGe1-x core-shell nanowire heterostructures Proceedings of Spie. 7406. DOI: 10.1117/12.829159 |
0.379 |
|
| 2009 |
Garcia-Gutierrez DI, Shahrjerdi D, Kaushik V, Banerjee SK. Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2390-2395. DOI: 10.1116/1.3256229 |
0.66 |
|
| 2009 |
Zaman RJ, Matthews K, Hasan MM, Xiong W, Register LF, Banerjee SK. A novel low-cost trigate process suitable for embedded CMOS 1T-1C pseudo-SRAM application Ieee Transactions On Electron Devices. 56: 448-455. DOI: 10.1109/Ted.2008.2011850 |
0.79 |
|
| 2009 |
Liu E, Kelly DQ, Donnelly JP, Tutuc E, Banerjee SK. Negative Differential Resistance in Buried-Channel $\hbox{Ge}_{x} \hbox{C}_{1 - x}$ pMOSFETs Ieee Electron Device Letters. 30: 136-138. DOI: 10.1109/Led.2008.2009364 |
0.589 |
|
| 2009 |
Banerjee SK, Register LF, Tutuc E, Reddy D, MacDonald AH. Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device Ieee Electron Device Letters. 30: 158-160. DOI: 10.1109/Led.2008.2009362 |
0.618 |
|
| 2009 |
Kong N, Kirichenko TA, Hwang GS, Banerjee SK. Arsenic defect complexes at SiO2/Si interfaces: A density functional theory study Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.205328 |
0.781 |
|
| 2009 |
Kim Y, Kirichenko TA, Kong N, Henkelman G, Banerjee SK. First-principles studies of small arsenic interstitial complexes in crystalline silicon Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.075201 |
0.759 |
|
| 2009 |
Liu H, Ferrer DA, Ferdousi F, Banerjee SK. Nonvolatile memory with Co- SiO2 core-shell nanocrystals as charge storage nodes in floating gate Applied Physics Letters. 95. DOI: 10.1063/1.3258471 |
0.742 |
|
| 2009 |
Varahramyan KM, Ferrer D, Tutuc E, Banerjee SK. Band engineered epitaxial Ge-SiXGe1-X core-shell nanowire heterostructures Applied Physics Letters. 95: 33101. DOI: 10.1063/1.3173811 |
0.368 |
|
| 2009 |
Nah J, Liu ES, Shahrjerdi D, Varahramyan KM, Banerjee SK, Tutuc E. Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain Applied Physics Letters. 94. DOI: 10.1063/1.3079410 |
0.7 |
|
| 2009 |
Kim S, Nah J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E, Banerjee SK. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric Applied Physics Letters. 94. DOI: 10.1063/1.3077021 |
0.762 |
|
| 2009 |
Ferdousi F, Sarkar J, Tang S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration Journal of Electronic Materials. 38: 438-442. DOI: 10.1007/S11664-008-0645-7 |
0.791 |
|
| 2008 |
Jamil M, Donnelly JP, Lee S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C07-03 |
0.801 |
|
| 2008 |
Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2938728 |
0.671 |
|
| 2008 |
Oh J, Majhi P, Lee HD, Banerjee SK, Harris R, Tseng HH, Jammy R. Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors Japanese Journal of Applied Physics. 47: 2656-2659. DOI: 10.1143/Jjap.47.2656 |
0.467 |
|
| 2008 |
Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK. Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1182-1186. DOI: 10.1116/1.2835061 |
0.676 |
|
| 2008 |
Liu H, Winkenwerder W, Liu Y, Ferrer D, Shahrjerdi D, Stanley SK, Ekerdt JG, Banerjee SK. Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications Ieee Transactions On Electron Devices. 55: 3610-3614. DOI: 10.1109/Ted.2008.2006889 |
0.716 |
|
| 2008 |
Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031 |
0.739 |
|
| 2008 |
Lee SH, Majhi P, Oh J, Sassman B, Young C, Bowonder A, Loh WY, Choi KJ, Cho BJ, Lee HD, Kirsch P, Harris HR, Tsai W, Datta S, Tseng HH, ... Banerjee SK, et al. Demonstration of Lg ∼ nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high Ion/Ioff (>5 × 104, and controlled short channel effects (SCEs) Ieee Electron Device Letters. 29: 1017-1020. DOI: 10.1109/Led.2008.2002073 |
0.578 |
|
| 2008 |
Majhi P, Kalra P, Harris R, Choi KJ, Heh D, Oh J, Kelly D, Choi R, Cho BJ, Banerjee S, Tsai W, Tseng H, Jammy R. Demonstration of High-Performance PMOSFETs Using $ \hbox{Si}$ – $\hbox{Si}_{x}\hbox{Ge}_{1 - x}$ – $\hbox{Si}$ Quantum Wells With High- $\kappa$ /Metal-Gate Stacks Ieee Electron Device Letters. 29: 99-101. DOI: 10.1109/Led.2007.911987 |
0.449 |
|
| 2008 |
Sahu B, Min H, MacDonald AH, Banerjee SK. Energy gaps, magnetism, and electric-field effects in bilayer graphene nanoribbons Physical Review B. 78: 45404. DOI: 10.1103/Physrevb.78.045404 |
0.333 |
|
| 2008 |
Sahu BR, Banerjee SK, Kleinman L. Density-functional study of bulk silicon lightly doped with manganese Physical Review B. 77. DOI: 10.1103/Physrevb.77.155202 |
0.33 |
|
| 2008 |
Liu KM, Chen W, Register LF, Banerjee SK. Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors Journal of Applied Physics. 104. DOI: 10.1063/1.3031303 |
0.315 |
|
| 2008 |
Nah J, Varahramyan K, Liu ES, Banerjee SK, Tutuc E. Doping of Ge- Six Ge1-x core-shell nanowires using low energy ion implantation Applied Physics Letters. 93. DOI: 10.1063/1.3013335 |
0.369 |
|
| 2008 |
Kong N, Kirichenko TA, Hwang GS, Banerjee SK. Interstitial-based boron diffusion dynamics in amorphous silicon Applied Physics Letters. 93. DOI: 10.1063/1.2976556 |
0.775 |
|
| 2008 |
Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked HfAlOx HfO2 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2943186 |
0.664 |
|
| 2008 |
Kong N, Kirichenko TA, Kim Y, Foisy MC, Banerjee SK. Physically based kinetic Monte Carlo modeling of arsenic-interstitial interaction and arsenic uphill diffusion during ultrashallow junction formation Journal of Applied Physics. 104. DOI: 10.1063/1.2942398 |
0.762 |
|
| 2008 |
Shahrjerdi D, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937404 |
0.647 |
|
| 2008 |
Zhao H, Shahrjerdi D, Zhu F, Zhang M, Kim HS, Ok I, Yum JH, Park SI, Banerjee SK, Lee JC. Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2937117 |
0.683 |
|
| 2008 |
Shahrjerdi D, Akyol T, Ramon M, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2931708 |
0.682 |
|
| 2008 |
Basu D, Gilbert MJ, Register LF, Banerjee SK, MacDonald AH. Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2839330 |
0.385 |
|
| 2008 |
Donnelly JP, Kelly DQ, Garcia-Gutierrez DI, José-Yacamán M, Banerjee SK. High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate Electronics Letters. 44: 240-241. DOI: 10.1049/El:20082558 |
0.618 |
|
| 2008 |
Garcia-Gutierrez DI, Kaushik V, Shahrjerdi D, Banerjee SK. Physical and electrical characterization of the interface between atomic-layer-deposited Al2O3 on GaAs substrates for CMOS applications Microscopy and Microanalysis. 14: 446-447. DOI: 10.1017/S1431927608083001 |
0.645 |
|
| 2008 |
Oh J, Majhi P, Tseng H, Jammy R, Kelly DQ, Banerjee SK, Campbell JC. Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation Thin Solid Films. 516: 4107-4110. DOI: 10.1016/J.Tsf.2007.10.012 |
0.441 |
|
| 2007 |
Oh J, Majhi P, Lee H, Lee S, Banerjee S, Kalra P, Harris R, Tseng H, Jammy R. Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors The Japan Society of Applied Physics. 2007: 420-421. DOI: 10.7567/Ssdm.2007.P-3-8 |
0.434 |
|
| 2007 |
Banerjee SK, Tang S, Mao C, Sarkar J, Liu H, Shahrjerdi D, Lee CH, Trent JD. Bio-Nano Approaches to Fabrication of Quantum Dot Floating Gate Flash Memories The Japan Society of Applied Physics. 2007: 948-949. DOI: 10.7567/Ssdm.2007.D-8-1 |
0.587 |
|
| 2007 |
Dey S, Lee S, Joshi SV, Majhi P, Banerjee SK. Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate Mrs Proceedings. 995. DOI: 10.1557/Proc-0995-G05-16 |
0.67 |
|
| 2007 |
Kong N, Kirichenko TA, Hwang GS, Mark FC, Anderson SGH, Banerjee SK. An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon Mrs Proceedings. 994: 307-313. DOI: 10.1557/Proc-0994-F10-02 |
0.75 |
|
| 2007 |
Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119 |
0.758 |
|
| 2007 |
Gilbert MJ, Banerjee SK. Ballistic recovery in III-V nanowire transistors Journal of Vacuum Science & Technology B. 25: 189-193. DOI: 10.1116/1.2409987 |
0.349 |
|
| 2007 |
Joshi S, Pinto A, Huang Y-, Wise R, Cleavelin R, Seacrist M, Ries M, Ramin M, Freeman M, Nguyen B, Matthews K, Wilks B, Denning L, Johnson C, Bennet J, ... ... Banerjee SK, et al. Junction Passivation for Direct Silicon Bond Hybrid Orientation Technology Ieee Transactions On Electron Devices. 54: 2045-2050. DOI: 10.1109/Ted.2007.901350 |
0.383 |
|
| 2007 |
Gilbert MJ, Banerjee SK. Ballistic to Diffusive Crossover in III–V Nanowire Transistors Ieee Transactions On Electron Devices. 54: 645-653. DOI: 10.1109/Ted.2007.891850 |
0.376 |
|
| 2007 |
Tang S, Mao C, Liu Y, Kelly DQ, Banerjee SK. Protein-Mediated Nanocrystal Assembly for Flash Memory Fabrication Ieee Transactions On Electron Devices. 54: 433-438. DOI: 10.1109/Ted.2006.890234 |
0.416 |
|
| 2007 |
Fan XF, Register LF, Winstead B, Foisy MC, Chen W, Zheng X, Ghosh B, Banerjee SK. Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa Ieee Transactions On Electron Devices. 54: 291-296. DOI: 10.1109/Ted.2006.888667 |
0.331 |
|
| 2007 |
Oh J, Majhi P, Lee H, Yoo O, Banerjee S, Kang CY, Yang J, Harris R, Tseng H, Jammy R. Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates Ieee Electron Device Letters. 28: 1044-1046. DOI: 10.1109/Led.2007.908502 |
0.444 |
|
| 2007 |
Zaman RJ, Mathews K, Xiong W, Banerjee SK. Trigate FET device characteristics improvement using a hydrogen anneal process with a novel hard mask approach Ieee Electron Device Letters. 28: 916-918. DOI: 10.1109/Led.2007.905964 |
0.81 |
|
| 2007 |
Shahrjerdi D, Garcia-Gutierrez DI, Banerjee SK. Fabrication of Ni nanocrystal flash memories using a polymeric self-assembly approach Ieee Electron Device Letters. 28: 793-796. DOI: 10.1109/Led.2007.902612 |
0.599 |
|
| 2007 |
Sarkar J, Dey S, Shahrjerdi D, Banerjee SK. Vertical flash memory cell with nanocrystal floating gate for ultradense integration and good retention Ieee Electron Device Letters. 28: 449-451. DOI: 10.1109/Led.2007.895445 |
0.693 |
|
| 2007 |
Joshi S, Krug C, Heh D, Na HJ, Harris HR, Oh JW, Kirsch PD, Majhi P, Lee BH, Tseng HH, Jammy R, Lee JC, Banerjee SK. Improved Ge surface passivation with ultrathin SiOX enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack Ieee Electron Device Letters. 28: 308-311. DOI: 10.1109/Led.2007.893274 |
0.46 |
|
| 2007 |
Huang Z, Oh J, Banerjee SK, Campbell JC. Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors Ieee Journal of Quantum Electronics. 43: 238-242. DOI: 10.1109/Jqe.2006.890395 |
0.425 |
|
| 2007 |
Min H, Sahu B, Banerjee SK, MacDonald AH. Ab initio theory of gate induced gaps in graphene bilayers Physical Review B. 75: 155115. DOI: 10.1103/Physrevb.75.155115 |
0.321 |
|
| 2007 |
Shahrjerdi D, Garcia-Gutierrez DI, Akyol T, Bank SR, Tutuc E, Lee JC, Banerjee SK. GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization Applied Physics Letters. 91. DOI: 10.1063/1.2806190 |
0.668 |
|
| 2007 |
Shahrjerdi D, Tutuc E, Banerjee SK. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2764438 |
0.731 |
|
| 2007 |
Sarkar J, Tang S, Shahrjerdi D, Banerjee SK. Vertical flash memory with protein-mediated assembly of nanocrystal floating gate Applied Physics Letters. 90. DOI: 10.1063/1.2711528 |
0.614 |
|
| 2007 |
Kong N, Banerjee SK, Kirichenko TA, Anderson SGH, Foisy MC. Enhanced and retarded diffusion of arsenic in silicon by point defect engineering Applied Physics Letters. 90. DOI: 10.1063/1.2450663 |
0.763 |
|
| 2007 |
Joshi S, Sahu B, Banerjee SK, Ciucivara A, Kleinman L, Wise R, Cleavelin R, Pinto A, Seacrist M, Ries M, Huang Y, Ma M, Lin C. Theoretical and experimental investigation of valence band offsets for direct silicon bond hybrid orientation technology Applied Physics Letters. 90: 043503. DOI: 10.1063/1.2434164 |
0.409 |
|
| 2007 |
Kim Y, Kirichenko TA, Kong N, Larson L, Banerjee SK. First-principles studies of di-arsenic interstitial and its implications for arsenic-interstitial diffusion in crystalline silicon Physica B: Condensed Matter. 401: 144-147. DOI: 10.1016/J.Physb.2007.08.132 |
0.767 |
|
| 2007 |
Kelly DQ, Lee S, Kalra P, Harris R, Oh J, Kirsch P, Banerjee SK, Majhi P, Tseng H, Jammy R. Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs Microelectronic Engineering. 84: 2054-2057. DOI: 10.1016/J.Mee.2007.04.133 |
0.563 |
|
| 2007 |
Coffee SS, Shahrjerdi D, Banerjee SK, Ekerdt JG. Selective silicon nanoparticle growth on high-density arrays of silicon nitride Journal of Crystal Growth. 308: 269-277. DOI: 10.1016/J.Jcrysgro.2007.08.024 |
0.631 |
|
| 2007 |
Joshi S, Dey S, Chaumont M, Campion A, Banerjee SK. Ultra-Thin Si1−x Ge x Dislocation Blocking Layers for Ge/Strained Si CMOS Devices Journal of Electronic Materials. 36: 641-647. DOI: 10.1007/S11664-007-0137-1 |
0.651 |
|
| 2007 |
Gilbert MJ, Banerjee SK. Phonon exacerbated quantum interference effects in III-V nanowire transistors Journal of Computational Electronics. 6: 141-144. DOI: 10.1007/S10825-006-0086-6 |
0.357 |
|
| 2007 |
Basu D, Gilbert MJ, Banerjee SK. Effect of elastic processes and ballistic recovery in silicon nanowire transistors Journal of Computational Electronics. 6: 113-116. DOI: 10.1007/S10825-006-0065-Y |
0.399 |
|
| 2006 |
Schricker AD, Joshi SV, Hanrath T, Banerjee SK, Korgel BA. Temperature dependence of the field effect mobility of solution-grown germanium nanowires. The Journal of Physical Chemistry. B. 110: 6816-23. PMID 16570990 DOI: 10.1021/Jp055663N |
0.418 |
|
| 2006 |
Coffee SS, Winkenwerder WA, Stanley SK, Davood S, Banerjee SK, Ekerdt JG. Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia Mrs Proceedings. 921. DOI: 10.1557/Proc-0921-T07-09 |
0.312 |
|
| 2006 |
Yonghyun K, Kirichenko TA, Banerjee SK, Hwang GS. Ab-initio study of boron diffusion retardation in Si1-xGex Mrs Proceedings. 912: 105-109. DOI: 10.1557/Proc-0912-C03-08 |
0.73 |
|
| 2006 |
Basu D, Gilbert MJ, Banerjee SK. Surface roughness exacerbated performance degradation in silicon nanowire transistors Journal of Vacuum Science & Technology B. 24: 2424-2428. DOI: 10.1116/1.2353846 |
0.396 |
|
| 2006 |
Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM. Atomic force microscopy study of sapphire surfaces annealed with a H 2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH) 3 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1572-1576. DOI: 10.1116/1.2200384 |
0.595 |
|
| 2006 |
Stanley SK, Joshi SV, Banerjee SK, Ekerdt JG. Ge interactions on HfO 2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO 2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 78-83. DOI: 10.1116/1.2137328 |
0.347 |
|
| 2006 |
Ganguly S, Register LF, MacDonald AH, Banerjee SK. Two-level voltage-controlled magnetization switch using a ferromagnetic semiconductor resonant-tunneling diode Ieee Transactions On Nanotechnology. 5: 30-36. DOI: 10.1109/Tnano.2005.861406 |
0.547 |
|
| 2006 |
Liu Y, Dey S, Tang S, Kelly DQ, Sarkar J, Banerjee SK. Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier Ieee Transactions On Electron Devices. 53: 2598-2602. DOI: 10.1109/Ted.2006.882395 |
0.618 |
|
| 2006 |
Li F, Register LF, Hasan MM, Banerjee SK. A program for device model parameter extraction from gate capacitance and current of ultrathin SiO2 and high-κ gate stacks Ieee Transactions On Electron Devices. 53: 2118-2126. DOI: 10.1109/Ted.2006.880373 |
0.379 |
|
| 2006 |
Li F, Tseng HH, Register LF, Tobin PJ, Banerjee SK. Asymmetry in gate capacitance-voltage (C-V) behavior of ultrathin metal gate MOSFETs with HfO2 gate dielectrics Ieee Transactions On Electron Devices. 53: 1943-1946. DOI: 10.1109/Ted.2006.878013 |
0.453 |
|
| 2006 |
Li F, Mudanai SP, Fan YY, Register LF, Banerjee SK. Physically based quantum - Mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1nm) SiO2 and high-k gate stacks Ieee Transactions On Electron Devices. 53: 1096-1106. DOI: 10.1109/Ted.2006.871877 |
0.825 |
|
| 2006 |
Ghosh B, Fan XF, Register LF, Banerjee SK. Monte Carlo study of strained germanium nanoscale bulk pMOSFETs Ieee Transactions On Electron Devices. 53: 533-537. DOI: 10.1109/Ted.2005.863765 |
0.345 |
|
| 2006 |
Kelly DQ, Donnelly JP, Dey S, Joshi SV, Gutierrez DIG, Yacaman MJ, Banerjee SK. BC high-/spl kappa//metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates Ieee Electron Device Letters. 27: 265-268. DOI: 10.1109/Led.2006.870866 |
0.683 |
|
| 2006 |
Ganguly S, MacDonald AH, Register LF, Banerjee SK. Scattering dependence of bias-controlled magnetization switching in ferromagnetic resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.153314 |
0.522 |
|
| 2006 |
Ganguly S, MacDonald AH, Register LF, Banerjee S. Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.033310 |
0.543 |
|
| 2006 |
Garcia-Gutierrez DI, José-Yacamán M, Lu S, Kelly DQ, Banerjee SK. Carbon segregation as a strain relaxation mechanism in thin germanium-carbon layers deposited directly on silicon Journal of Applied Physics. 100: 044323. DOI: 10.1063/1.2336305 |
0.356 |
|
| 2006 |
Shahrjerdi D, Oye MM, Holmes AL, Banerjee SK. Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization Applied Physics Letters. 89. DOI: 10.1063/1.2234837 |
0.679 |
|
| 2006 |
Liu Y, Tang S, Banerjee SK. Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory Applied Physics Letters. 88: 213504. DOI: 10.1063/1.2202749 |
0.421 |
|
| 2006 |
Kelly DQ, Wiedmann I, Donnelly JP, Joshi SV, Dey S, Banerjee SK, Garcia-Gutierrez DI, José-Yacamán M. Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications Applied Physics Letters. 88: 152101. DOI: 10.1063/1.2195008 |
0.713 |
|
| 2006 |
Stanley SK, Joshi SV, Banerjee SK, Ekerdt JG. Surface reactions and kinetically-driven patterning scheme for selective deposition of Si and Ge nanoparticle arrays on HfO2 Surface Science. 600. DOI: 10.1016/J.Susc.2005.12.029 |
0.357 |
|
| 2006 |
Jayanarayanan SK, Dey S, Donnelly JP, Banerjee SK. A novel 50 nm vertical MOSFET with a dielectric pocket Solid-State Electronics. 50: 897-900. DOI: 10.1016/J.Sse.2006.04.003 |
0.818 |
|
| 2006 |
Ghosh B, Chen JH, Fan XF, Register LF, Banerjee SK. Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics Solid-State Electronics. 50: 248-253. DOI: 10.1016/J.Sse.2005.12.007 |
0.349 |
|
| 2006 |
Dey S, Joshi S, Garcia-Gutierrez D, Chaumont M, Campion A, Jose-Yacaman M, Banerjee SK. Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors Journal of Electronic Materials. 35: 1607-1612. DOI: 10.1007/S11664-006-0205-Y |
0.654 |
|
| 2005 |
Zaman RJ, Xiong W, Quintanilla R, Schulz T, Cleavelin CR, Wise R, Pas M, Patruno P, Schruefer K, Banerjee SK. Effects of Hydrogen Annealing Process Conditions on Nano Scale Silicon (011) Fins Mrs Proceedings. 872: 37-41. DOI: 10.1557/Proc-872-J3.1 |
0.782 |
|
| 2005 |
Li F, Mudanai S, Register LF, Banerjee SK. A physically based compact gate C-V model for ultrathin (EOT ∼ 1 nm and below) gate dielectric MOS devices Ieee Transactions On Electron Devices. 52: 1148-1158. DOI: 10.1109/Ted.2005.848079 |
0.451 |
|
| 2005 |
Ghosh B, Wang X, Fan XF, Register LF, Banerjee SK. Monte Carlo study of germanium n- and pMOSFETs Ieee Transactions On Electron Devices. 52: 547-553. DOI: 10.1109/Ted.2005.844736 |
0.431 |
|
| 2005 |
Lin L, Kirichenko T, Sahu BR, Hwang GS, Banerjee SK. Theoretical study of B diffusion with charged defects in strained Si Physical Review B. 72: 205206. DOI: 10.1103/Physrevb.72.205206 |
0.724 |
|
| 2005 |
Yu D, Hwang GS, Kirichenko TA, Banerjee SK. Structure and diffusion of excess Si atoms in SiO2 Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.205204 |
0.74 |
|
| 2005 |
Kirichenko TA, Yu D, Banerjee SK, Hwang GS. Silicon interstitials at Si SiO2 interfaces: Density functional calculations Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.035345 |
0.748 |
|
| 2005 |
Ganguly S, Register LF, Banerjee S, MacDonald AH. Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.245306 |
0.532 |
|
| 2005 |
Kohli P, Jain A, Chakravarthi S, Bu H, Dunham ST, Banerjee S. Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation Journal of Applied Physics. 97. DOI: 10.1063/1.1884246 |
0.393 |
|
| 2005 |
Dey S, Joshi S, Banerjee SK. Current-crowding effect in multiple cantilever channel MOSFET Solid-State Electronics. 49: 1248-1250. DOI: 10.1016/J.Sse.2005.04.011 |
0.593 |
|
| 2005 |
Kelly DQ, Dey S, Onsongo D, Banerjee SK. Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs Microelectronics Reliability. 45: 1033-1040. DOI: 10.1016/J.Microrel.2005.01.011 |
0.596 |
|
| 2004 |
Kirichenko TA, Yu D, Banerjee SK, Hwang GS. Behavior of Si Interstitials and Boron-Interstitial Pairs at the Si/SiO 2 Interface Mrs Proceedings. 810: 339-344. DOI: 10.1557/Proc-810-C8.5 |
0.739 |
|
| 2004 |
Kohli P, Jain A, Bu H, Chakravarthi S, Machala C, Dunham ST, Banerjee SK. Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation Journal of Vacuum Science & Technology B. 22: 471-476. DOI: 10.1116/1.1642645 |
0.626 |
|
| 2004 |
Onsongo D, Kelly DQ, Dey S, Wise RL, Cleavelin CR, Banerjee SK. Improved hot-electron reliability in strained-Si nMOS Ieee Transactions On Electron Devices. 51: 2193-2199. DOI: 10.1109/Ted.2004.839871 |
0.61 |
|
| 2004 |
Chen X, Joshi S, Chen J, Ngai T, Banerjee SK. MOS capacitors on epitaxial Ge-Si1-xGex with high-κ dielectrics using RPCVD Ieee Transactions On Electron Devices. 51: 1532-1534. DOI: 10.1109/Ted.2004.833957 |
0.678 |
|
| 2004 |
Chen JJ, Bojarezuk NA, Shang H, Copel M, Hannon JB, Karasinski J, Preisler E, Banerjee SK, Guha S. Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge Ieee Transactions On Electron Devices. 51: 1441-1447. DOI: 10.1109/Ted.2004.833593 |
0.421 |
|
| 2004 |
Fan XF, Wang X, Winstead B, Register LF, Ravaioli U, Banerjee SK. MC simulation of strained-Si MOSFET with full-band structure and quantum correction Ieee Transactions On Electron Devices. 51: 962-970. DOI: 10.1109/Ted.2004.828296 |
0.383 |
|
| 2004 |
Oh J, Banerjee SK, Campbell JC. Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers Ieee Photonics Technology Letters. 16: 581-583. DOI: 10.1109/Lpt.2003.822258 |
0.376 |
|
| 2004 |
Kirichenko TA, Banerjee SK, Hwang GS. Interaction of neutral vacancies and interstitials with the Si(001) surface Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.045321 |
0.734 |
|
| 2004 |
Lin L, Kirichenko T, Banerjee SK, Hwang GS. Boron diffusion in strained Si: A first-principles study Journal of Applied Physics. 96: 5543-5547. DOI: 10.1063/1.1803630 |
0.741 |
|
| 2004 |
Harrison SA, Yu D, Edgar TF, Hwang GS, Kirichenko TA, Banerjee SK. Origin of vacancy and interstitial stabilization at the amorphous-crystalline Si interface Journal of Applied Physics. 96: 3334-3338. DOI: 10.1063/1.1778475 |
0.756 |
|
| 2004 |
Xia TS, Register LF, Banerjee SK. Quantum transport in carbon nanotube transistors: Complex band structure effects Journal of Applied Physics. 95: 1597-1599. DOI: 10.1063/1.1631747 |
0.33 |
|
| 2004 |
Kirichenko TA, Banerjee SK, Hwang GS. Mechanisms of monovacancy annihilation and type-A defect creation on Si(0 0 1)-2 × 1 Surface Science. 555: 187-192. DOI: 10.1016/J.Susc.2004.02.028 |
0.728 |
|
| 2004 |
Shi Z, Onsongo D, Rai R, Samavedam SB, Banerjee SK. Hole mobility enhancement and Si cap optimization in nanoscale strained Si1-xGex PMOSFETs Solid-State Electronics. 48: 2299-2306. DOI: 10.1016/J.Sse.2004.04.016 |
0.821 |
|
| 2004 |
Quinones E, Onsongo D, Shi Z, Banerjee SK. Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si1-yCy alloy layers Solid-State Electronics. 48: 379-387. DOI: 10.1016/J.Sse.2003.09.003 |
0.829 |
|
| 2004 |
Kohli P, Chakravarthi S, Jain A, Bu H, Mehrotra M, Dunham ST, Banerjee SK. Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 114: 390-396. DOI: 10.1016/J.Mseb.2004.07.080 |
0.63 |
|
| 2004 |
Kirichenko TA, Banerjee SK, Hwang GS. Surface chemistry effects on vacancy and interstitial annihilation on Si(001) Physica Status Solidi (B) Basic Research. 241: 2303-2312. DOI: 10.1002/Pssb.200404943 |
0.715 |
|
| 2003 |
Kim D, Hwang S, Edgar TF, Banerjee S. Characterization of SiGe Quantum Dots on SiO[sub 2] and HfO[sub 2] Grown by Rapid Thermal Chemical Deposition for Nanoelectronic Devices Journal of the Electrochemical Society. 150: G240. DOI: 10.1149/1.1556597 |
0.394 |
|
| 2003 |
Kim D, Kim T, Banerjee SK. Memory characterization of SiGe quantum dot flash memories with HfO/sub 2/ and SiO/sub 2/ tunneling dielectrics Ieee Transactions On Electron Devices. 50: 1823-1829. DOI: 10.1109/Ted.2003.815370 |
0.517 |
|
| 2003 |
Xia T, Register LF, Banerjee SK. Quantum transport in double-gate MOSFETs with complex band structure Ieee Transactions On Electron Devices. 50: 1511-1516. DOI: 10.1109/Ted.2003.813348 |
0.371 |
|
| 2003 |
Fan YY, Xiang Q, An J, Register LF, Banerjee SK. Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: Its tradeoff with gate capacitance Ieee Transactions On Electron Devices. 50: 433-439. DOI: 10.1109/Ted.2003.809433 |
0.381 |
|
| 2003 |
Kim D, Prins FE, Kim T, Hwang S, Lee CH, Kwong D, Banerjee SK. Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO/sub 2/ tunneling oxide Ieee Transactions On Electron Devices. 50: 510-513. DOI: 10.1109/Ted.2002.804722 |
0.552 |
|
| 2003 |
Li HJ, Bennett J, Zeitzoff P, Kirichenko TA, Banerjee SK, Henke D. Indium out-diffusion from silicon during rapid thermal annealing Ieee Electron Device Letters. 24: 221-223. DOI: 10.1109/Led.2003.810891 |
0.768 |
|
| 2003 |
Shi Z, Onsongo D, Onishi K, Lee JC, Banerjee SK. Mobility enhancement in surface channel SiGe PMOSFETs with HfO 2 gate dielectrics Ieee Electron Device Letters. 24: 34-36. DOI: 10.1109/Led.2002.807020 |
0.812 |
|
| 2003 |
Chen X, Banerjee S, Zhou J, Rabenberg L. TEM Study Of Silicide Formation And Microstructural Development Of Ni/ Si1-xGex Microscopy and Microanalysis. 9: 508-509. DOI: 10.1017/S1431927603442542 |
0.353 |
|
| 2003 |
Banerjee S. Bandgap and strain engineered Si-Ge-C vertical and planar MOSFETs Microelectronic Engineering. 69: 106-117. DOI: 10.1016/S0167-9317(03)00287-9 |
0.351 |
|
| 2003 |
Shi Z, Onsongo D, Chen X, Kim DW, Nieh RE, Banerjee SK. Nickel silicidation techniques for strained Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloys material-device applications Journal of Electronic Materials. 32: 184-190. DOI: 10.1007/S11664-003-0191-2 |
0.818 |
|
| 2003 |
Chen X, Shi Z, Banerjee SK, Zhou JP, Rabenberg LK. High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1-xGex Journal of Electronic Materials. 32: 1171-1181. DOI: 10.1007/S11664-003-0008-3 |
0.575 |
|
| 2002 |
Li HJ, Onsongo D, Kirichenko TA, Kohliand P, Banerjee SK. The Pile-Ups Of Aluminum And Boron In The Sige(C) Mrs Proceedings. 737: 643-648. DOI: 10.1557/Proc-737-F8.1 |
0.754 |
|
| 2002 |
Fan YY, Nieh RE, Lee JC, Lucovsky G, Brown GA, Register LF, Banerjee SK. Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor Ieee Transactions On Electron Devices. 49: 1969-1978. DOI: 10.1109/Ted.2002.804713 |
0.403 |
|
| 2002 |
Chen X, Ouyang QC, Wang G, Banerjee SK. Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping Ieee Transactions On Electron Devices. 49: 1962-1968. DOI: 10.1109/Ted.2002.804697 |
0.763 |
|
| 2002 |
Mudanai S, Li F, Samavedam SB, Tobin PJ, Kang CS, Nieh R, Lee JC, Register LF, Banerjee SK. Interfacial defect states in HfO2 and ZrO2 nMOS capacitors Ieee Electron Device Letters. 23: 728-730. DOI: 10.1109/Led.2002.805753 |
0.811 |
|
| 2002 |
Chen W, Register LF, Banerjee SK. Simulation of quantum effects along the channel of ultrascaled Si-based MOSFETs Ieee Transactions On Electron Devices. 49: 652-657. DOI: 10.1109/16.992875 |
0.322 |
|
| 2002 |
Kar GS, Maikap S, Banerjee SK, Ray SK. Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal–oxide semiconductor field-effect transistors Semiconductor Science and Technology. 17: 938-941. DOI: 10.1088/0268-1242/17/9/306 |
0.457 |
|
| 2002 |
Kar GS, Maikap S, Ray SK, Banerjee SK, Chakrabarti NB. Effective mobility and alloy scattering in the strain compensated SiGeC inversion layer Semiconductor Science and Technology. 17: 471-475. DOI: 10.1088/0268-1242/17/5/311 |
0.428 |
|
| 2002 |
Ngai T, Chen X, Chen J, Banerjee SK. Improving SiO2/SiGe interface of SiGe p-metal-oxide-silicon field-effect transistors using water vapor annealing Applied Physics Letters. 80: 1773-1775. DOI: 10.1063/1.1445806 |
0.672 |
|
| 2002 |
Ganguly S, Lin L, Kohli P, Li H, Kirichenko T, Srinivasa R, Agarwal V, Banerjee S. Comparison of low energy BF2+, BCl2+, and BBr2+ implants for the fabrication of ultrashallow P+-N junctions Journal of Applied Physics. 91: 2023-2027. DOI: 10.1063/1.1433926 |
0.771 |
|
| 2002 |
Kar GS, Maikap S, Banerjee SK, Ray SK. Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion layers Electronics Letters. 38: 141-142. DOI: 10.1049/El:20020095 |
0.388 |
|
| 2002 |
Kar GS, Dhar A, Bera LK, Ray SK, John S, Banerjee SK. Effect of carbon on lattice strain and hole mobility in Si1-xGex alloys Journal of Materials Science: Materials in Electronics. 13: 49-55. DOI: 10.1023/A:1013103232208 |
0.403 |
|
| 2002 |
Wang X, Kencke DL, Liu KC, Register LF, Banerjee SK. Band alignments in sidewall strained Si/strained SiGe heterostructures Solid-State Electronics. 46: 2021-2025. DOI: 10.1016/S0038-1101(02)00247-2 |
0.742 |
|
| 2002 |
Kohli P, Ganguly S, Kirichenko T, Li H-, Banerjee S, Graetz E, Shevelev M. Microwave annealing for ultra-shallow junction formation Journal of Electronic Materials. 31: 214-219. DOI: 10.1007/S11664-002-0209-1 |
0.787 |
|
| 2001 |
Kim DW, Prins F, Ko KS, Lee CH, Kwong DL, Banerjee SK. The Characterization of Initial Growth of Polycrystalline Silicon Germanium Films on Zirconium Oxide Mrs Proceedings. 686: 217-222. DOI: 10.1557/Proc-686-A9.2 |
0.4 |
|
| 2001 |
Jayanarayanan S, Prins F, Chen X, Banerjee S. Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD Mrs Proceedings. 686: 75-79. DOI: 10.1557/Proc-686-A2.8 |
0.76 |
|
| 2001 |
Kim DW, Kim YH, Chen X, Lee CH, Song SC, Prins FE, Kwong DL, Banerjee SK. Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition Journal of Vacuum Science & Technology B. 19: 1104-1108. DOI: 10.1116/1.1387453 |
0.547 |
|
| 2001 |
Mudanai S, Register LF, Tasch AF, Banerjee SK. Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs Ieee Electron Device Letters. 22: 145-147. DOI: 10.1109/55.910624 |
0.793 |
|
| 2001 |
Chen X, Liu KC, Ouyang QC, Jayanarayanan SK, Banerjee SK. Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Ieee Transactions On Electron Devices. 48: 1975-1980. DOI: 10.1109/16.944185 |
0.832 |
|
| 2001 |
Ouyang QC, Chen X, Tasch Al.F. J, Register LF, Banerjee SK. Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs Ieee Transactions On Electron Devices. 48: 1245-1249. DOI: 10.1109/16.925255 |
0.774 |
|
| 2001 |
Maikap S, Ray SK, Banerjee SK, Maiti CK. Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers Semiconductor Science and Technology. 16: 160-163. DOI: 10.1088/0268-1242/16/3/307 |
0.354 |
|
| 2001 |
Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 3334-3336. DOI: 10.1063/1.1375004 |
0.832 |
|
| 2001 |
Ngai T, Qi WJ, Sharma R, Fretwell JL, Chen X, Lee JC, Banerjee SK. Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric Applied Physics Letters. 78: 3085-3087. DOI: 10.1063/1.1372204 |
0.379 |
|
| 2001 |
Wang G, Chen Y, Li D, Oak S, Srivastav G, Banerjee S, Tasch A, Merrill P, Bleiler R. Oxygen recoil implant from SiO2 layers into single-crystalline silicon Journal of Applied Physics. 89: 5997-6001. DOI: 10.1063/1.1355699 |
0.344 |
|
| 2001 |
Chen X, Liu KC, Jayanarayanan SK, Banerjee S. Electron mobility enhancement in strained SiGe vertical n-type metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 377-379. DOI: 10.1063/1.1342038 |
0.809 |
|
| 2001 |
Ray SK, Kar GS, Banerjee SK. Characteristics of UHVCVD grown Si/Si1−x−yGexCy/Si quantum well heterostructure Applied Surface Science. 182: 361-365. DOI: 10.1016/S0169-4332(01)00449-4 |
0.429 |
|
| 2001 |
Ray SK, Maikap S, Samanta SK, Banerjee SK, Maiti CK. Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers Solid-State Electronics. 45: 1951-1955. DOI: 10.1016/S0038-1101(01)00239-8 |
0.387 |
|
| 2001 |
Chen X, Liu KC, Ray S, Banerjee SK. Bandgap engineering in vertical P-MOSFETs Solid-State Electronics. 45: 1939-1943. DOI: 10.1016/S0038-1101(01)00237-4 |
0.584 |
|
| 2001 |
Kar GS, Ray SK, Kim T, Banerjee SK, Chakrabarti NB. Estimation of hole mobility in strained Si1-xGex buried channel heterostructure PMOSFET Solid-State Electronics. 45: 669-676. DOI: 10.1016/S0038-1101(01)00096-X |
0.46 |
|
| 2001 |
Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor Solid-State Electronics. 45: 281-285. DOI: 10.1016/S0038-1101(01)00013-2 |
0.811 |
|
| 2000 |
Chen X, Wang X, Liu K, Kim D, Banerjee S. Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets Mrs Proceedings. 618: 219-224. DOI: 10.1557/Proc-618-219 |
0.625 |
|
| 2000 |
Chen X, Wang XD, Liu KC, Kim DW, Banerjee SK. Scanning tunneling spectroscopy investigation of the strained Si1-xGex band structure Journal of Materials Research. 15: 1257-1260. DOI: 10.1557/Jmr.2000.0183 |
0.523 |
|
| 2000 |
Ouyang Q, Chen X, Mudanai SP, Wang X, Kencke DL, Tasch AF, Register LF, Banerjee SK. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949. DOI: 10.1109/16.870577 |
0.823 |
|
| 2000 |
Mudanai S, Fan YY, Ouyang Q, Tasch AF, Banerjee SK. Modeling of direct tunneling current through gate dielectric stacks Ieee Transactions On Electron Devices. 47: 1851-1857. DOI: 10.1109/16.870561 |
0.795 |
|
| 2000 |
Quinones EJ, John S, Ray SK, Banerjee SK. Design, fabrication, and analysis of SiGeC heterojunction PMOSFETs Ieee Transactions On Electron Devices. 47: 1715-1725. DOI: 10.1109/16.861582 |
0.452 |
|
| 2000 |
Maikap S, Ray SK, John S, Banerjee SK, Maiti CK. Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures Semiconductor Science and Technology. 15: 761-765. DOI: 10.1088/0268-1242/15/7/317 |
0.442 |
|
| 2000 |
Li H, Kohli P, Ganguly S, Kirichenko TA, Banerjee S, Zeitzoff P. Boron diffusion in silicon in the presence of other species Applied Physics Letters. 77: 2683-2685. DOI: 10.1063/1.1320019 |
0.788 |
|
| 2000 |
Wang X, Kencke DL, Liu KC, Tasch AF, Register LF, Banerjee SK. Monte Carlo simulation of electron transport in simple orthorhombically strained silicon Journal of Applied Physics. 88: 4717-4724. DOI: 10.1063/1.1311304 |
0.756 |
|
| 2000 |
Chen X, Ouyang Q, Onsongo DM, Jayanarayanan SK, Tasch A, Banerjee SK. SiGe heterojunction vertical p-type metal–oxide–semiconductor field-effect transistors with Si cap Applied Physics Letters. 77: 1656-1658. DOI: 10.1063/1.1309018 |
0.827 |
|
| 2000 |
Kar GS, Dhar A, Ray SK, John S, Banerjee SK. Hall mobilities in B-doped strained Si1−xGex and Si1−x−yGexCy layers grown by ultrahigh vacuum chemical vapor deposition Journal of Applied Physics. 88: 2039-2042. DOI: 10.1063/1.1305927 |
0.394 |
|
| 2000 |
Ngai T, Qi WJ, Sharma R, Fretwell J, Chen X, Lee JC, Banerjee SK. Electrical properties of ZrO2 gate dielectric on SiGe Applied Physics Letters. 76: 502-504. DOI: 10.1063/1.125801 |
0.363 |
|
| 2000 |
Maikap S, Bera LK, Ray SK, John S, Banerjee SK, Maiti CK. Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor Solid-State Electronics. 44: 1029-1034. DOI: 10.1016/S0038-1101(99)00327-5 |
0.444 |
|
| 2000 |
Shi Z, Chen X, Onsongo D, Quinones EJ, Banerjee SK. Simulation and optimization of strained Si1-xGex buried channel p-MOSFETs Solid-State Electronics. 44: 1223-1228. DOI: 10.1016/S0038-1101(00)00031-9 |
0.824 |
|
| 2000 |
Kencke DL, Ouyang Q, Chen W, Wang H, Mudanai S, Tasch A, Banerjee SK. Tinkering with the well-tempered MOSFET: Source-channel barrier modulation with high-permittivity dielectrics Superlattices and Microstructures. 27: 207-214. DOI: 10.1006/Spmi.1999.0803 |
0.809 |
|
| 1999 |
Sharma R, Fretwell JL, Ngai T, Banerjee S. Remote plasma-assisted deposition of gate quality oxides without the use of a preoxidation step Journal of the Electrochemical Society. 146: 2229-2234. DOI: 10.1149/1.1391919 |
0.592 |
|
| 1999 |
Sharma R, Fretwell JL, Ngai T, Banerjee S. Properties of gate quality silicon dioxide films deposited on Si–Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation Journal of Vacuum Science & Technology B. 17: 460-464. DOI: 10.1116/1.590576 |
0.351 |
|
| 1999 |
Quinones E, Ray SK, Liu KC, Banerjee S. Enhanced mobility PMOSFETs using tensile-strained Si/sub 1-y/C y layers Ieee Electron Device Letters. 20: 338-340. DOI: 10.1109/55.772369 |
0.448 |
|
| 1999 |
Mudanai S, Chindalore GL, Shih W-, Wang H, Ouyang Q, Tasch AF, Maziar CM, Banerjee SK. Models for electron and hole mobilities in MOS accumulation layers Ieee Transactions On Electron Devices. 46: 1749-1759. DOI: 10.1109/16.777166 |
0.789 |
|
| 1999 |
John S, Ray SK, Quinones E, Banerjee SK. Strained Si n-channel metal–oxide–semiconductor transistor on relaxed Si1−xGex formed by ion implantation of Ge Applied Physics Letters. 74: 2076-2078. DOI: 10.1063/1.123762 |
0.46 |
|
| 1999 |
John S, Ray SK, Quinones E, Oswal SK, Banerjee SK. Heterostructure P-channel metal-oxide-semiconductor transistor utilizing a Si1-x-yGexCy channel Applied Physics Letters. 74: 847-849. DOI: 10.1063/1.123386 |
0.455 |
|
| 1998 |
Srinivasa R, Agarwal V, Liu J, Downey DF, Banerjee S. Annealing studies on low energy As+ and As2+ implants Mrs Proceedings. 525: 257-262. DOI: 10.1557/Proc-525-257 |
0.319 |
|
| 1998 |
Kencke DL, Richart R, Garg S, Banerjee SK. A multilevel approach toward quadrupling the density of flash memory Ieee Electron Device Letters. 19: 86-88. DOI: 10.1109/55.661173 |
0.729 |
|
| 1998 |
Liu KC, Ray SK, Oswal SK, Banerjee SK. A deep submicron Si/sub 1-x/Ge/sub x//Si vertical PMOSFET fabricated by Ge ion implantation Ieee Electron Device Letters. 19: 13-15. DOI: 10.1109/55.650338 |
0.431 |
|
| 1998 |
Sultan A, Banerjee S, List S, McNeil V. An approach using a subamorphizing threshold dose silicon implant of optimal energy to achieve shallower junctions Journal of Applied Physics. 83: 8046-8050. DOI: 10.1063/1.367897 |
0.389 |
|
| 1998 |
Ray SK, Bera LK, Maiti CK, John S, Banerjee SK. Electrical characteristics of plasma oxidized Si1−x−yGexCy metal–oxide–semiconductor capacitors Applied Physics Letters. 72: 1250-1252. DOI: 10.1063/1.121028 |
0.375 |
|
| 1998 |
Ray SK, Bera LK, Maiti CK, John S, Banerjee SK. MOS capacitor characteristics of plasma oxide on partially strained SiGeC films Thin Solid Films. 332: 375-378. DOI: 10.1016/S0040-6090(98)01040-2 |
0.378 |
|
| 1998 |
Tesauro MR, Underwood G, Banerjee SK, Campion A. Removal of hydrogen from 2H::Si(100) by sputtering and recoil implantation:: investigation of an RPCVD growth mechanism Surface Science. 415: 37-47. DOI: 10.1016/S0039-6028(98)00452-X |
0.322 |
|
| 1997 |
Mullins CB, Pacheco KA, Banerjee S. Growth and characterization of silicon thin films employing supersonic jets of SiH4 on polysilicon and Si(100) Journal of Applied Physics. 82: 6281-6288. DOI: 10.1063/1.366515 |
0.323 |
|
| 1997 |
Sharma R, Fretwell JL, Doris B, Banerjee S. Use of metal-oxide-semiconductor capacitors in the analysis of low-temperature epitaxial Si films deposited by remote plasma-enhanced chemical vapor deposition Journal of Applied Physics. 82: 2684-2689. DOI: 10.1063/1.366085 |
0.389 |
|
| 1997 |
Seal CK, Samara D, Banerjee SK. Chemical vapor deposition growth and characterization of undoped and doped Ge and Ge1−xCx quantum dots on Si Applied Physics Letters. 71: 3564-3566. DOI: 10.1063/1.120392 |
0.322 |
|
| 1997 |
Hess G, Parkinson P, Gong B, Xu Z, Lim D, Downer M, John S, Banerjee S, Ekerdt JG, Jo SK. Evolution of subsurface hydrogen from boron-doped Si(100) Applied Physics Letters. 71: 2184-2186. DOI: 10.1063/1.119375 |
0.311 |
|
| 1997 |
Doris B, Fretwell J, Erskine JL, Banerjee SK. Effects ofin situdoping from B2H6 and PH3 on hydrogen desorption and the low-temperature growth mode of Si on Si(100) by remote plasma enhanced chemical vapor deposition Applied Physics Letters. 70: 2819-2821. DOI: 10.1063/1.119207 |
0.377 |
|
| 1997 |
Banerjee SK. Laser-enhanced epitaxy of Si and Si-Ge Materials Science and Engineering B-Advanced Functional Solid-State Materials. 45: 194-199. DOI: 10.1016/S0921-5107(96)01888-0 |
0.394 |
|
| 1996 |
John S, Quinones EJ, Ferguson B, Ray SK, Mullins CB, Banerjee SK. Surface Morphology of Si1−x−y GexCy Epitaxial Films Deposited by Low Temperature UHV-CVD Mrs Proceedings. 440. DOI: 10.1557/Proc-440-275 |
0.357 |
|
| 1996 |
Li C, John S, Quinones E, Banerjee SK. Cold‐wall ultrahigh vacuum chemical vapor deposition of doped and undoped Si and Si1−xGex epitaxial films using SiH4 and Si2H6 Journal of Vacuum Science and Technology. 14: 170-183. DOI: 10.1116/1.579915 |
0.393 |
|
| 1996 |
Sharma R, Fretwell J, Doris B, Banerjee S. Molybdenum contamination in low‐temperature epitaxial silicon films grown by remote plasma chemical vapor deposition Applied Physics Letters. 69: 109-111. DOI: 10.1063/1.118090 |
0.399 |
|
| 1996 |
Sultan A, Banerjee S, List S, Rodder M. Role of silicon surface in the removal of point defects in ultrashallow junctions Applied Physics Letters. 69: 2228-2230. DOI: 10.1063/1.117136 |
0.34 |
|
| 1996 |
Pacheco KA, Ferguson BA, Banerjee S, Mullins CB. Surface morphology of homoepitaxial silicon thin films grown using energetic supersonic jets of disilane Applied Physics Letters. 69: 1110-1112. DOI: 10.1063/1.117074 |
0.31 |
|
| 1996 |
Tasch AF, Banerjee SK. Ultra-shallow junction formation in silicon using ion implantation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 112: 177-183. DOI: 10.1016/0168-583X(95)01246-X |
0.309 |
|
| 1995 |
John S, Quinones EJ, Ferguson B, Pacheco K, Mullins CB, Banerjee SK. Progression of the Surface Roughness of N+ Silicon Epitaxial Films as Analyzed by AFM Mrs Proceedings. 399. DOI: 10.1557/Proc-399-123 |
0.357 |
|
| 1995 |
Mahajan A, Kellerman BK, Heitzinger JM, Banerjee S, Tasch A, White JM, Ekerdt JG. Surface chemistry of diethylsilane and diethylgermane on Ge(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1461-1468. DOI: 10.1116/1.579687 |
0.316 |
|
| 1995 |
Kellerman BK, Mahajan A, Russell NM, Ekerdt JG, Banerjee SK, Tasch AF, Campion A, White JM, Bonser DJ. Adsorption and decomposition of diethylsilane and diethylgermane on Si(100): Surface reactions for an atomic layer epitaxial approach to column IV epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1819-1825. DOI: 10.1116/1.579665 |
0.342 |
|
| 1995 |
Hu CY, Kencke DL, Banerjee SK, Richart R, Bandyopadhyay B, Moore B, Ibok E, Garg S. A Convergence Scheme for Over-Erased Flash EEPROM's Using Substrate-Bias-Enhanced Hot Electron Injection Ieee Electron Device Letters. 16: 500-502. DOI: 10.1109/55.468280 |
0.729 |
|
| 1995 |
Jung L, Manna I, Banerjee SK. Simulation, fabrication and characterization of a novel P-I-N-drain MOSFET structure for hot carrier suppression Ieee Transactions On Electron Devices. 42: 1591-1599. DOI: 10.1109/16.405272 |
0.364 |
|
| 1995 |
Pacheco KA, Ferguson BA, Li C, John S, Banerjee S, Mullins CB. Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition Applied Physics Letters. 67: 2951. DOI: 10.1063/1.114822 |
0.34 |
|
| 1995 |
Hu C‐, Kencke DL, Banerjee S, Bandyopadhyay B, Ibok E, Garg S. Determining effective dielectric thicknesses of metal‐oxide‐semiconductor structures in accumulation mode Applied Physics Letters. 66: 1638-1640. DOI: 10.1063/1.113877 |
0.752 |
|
| 1995 |
Sultan A, Batra S, Lux GE, Banerjee S. Modeling of boron diffusion in polysilicon-on-silicon structures using a rapid thermal anneal step for ultra-shallow junction formation Materials Science and Engineering B-Advanced Functional Solid-State Materials. 32: 25-32. DOI: 10.1016/0921-5107(94)01156-7 |
0.386 |
|
| 1995 |
Jung L, Damiano J, Zaman J, Batra S, Manning M, Banerjee S. A leakage current model for sub-micron lightly-doped drain-offset polysilicon TFTs Solid-State Electronics. 38: 2069-2073. DOI: 10.1016/0038-1101(95)00076-6 |
0.376 |
|
| 1995 |
Thomas S, Fretwell J, Kinosky D, Qian R, Mahajan A, Munguía P, Banerjee S, Tasgh A, Magee C. In situ P-doped Si and Si1−xGex epitaxial films grown by remote plasma enhanced chemical vapor deposition Journal of Electronic Materials. 24: 183-188. DOI: 10.1007/Bf02659893 |
0.345 |
|
| 1995 |
Li C, John S, Banerjee S. Low temperature heteroepitaxial growth of Si 1–x Ge x -on-Si by photo-enhanced ultra high vacuum chemical vapor deposition using Si 2 H 6 and Ge 2 H 6 Journal of Electronic Materials. 24: 875-884. DOI: 10.1007/Bf02653336 |
0.389 |
|
| 1994 |
Sultan A, Bhattacharya S, Batra S, Banerjee S. Boltzmann–Matano analysis based model for boron diffusion from polysilicon into single crystal silicon Journal of Vacuum Science & Technology B. 12: 391-394. DOI: 10.1116/1.587133 |
0.316 |
|
| 1994 |
Mahajan A, Kellerman BK, Russell NM, Banerjee S, Campion A, Ekerdt JG, Tasch A, White JM, Bonser DJ. Surface chemistry of diethylsilane and diethylgermane on Si(100): An atomic layer epitaxy approach Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 12: 2265-2270. DOI: 10.1116/1.579127 |
0.36 |
|
| 1994 |
Murtaza S, Mayer R, Rashed M, Kinosky D, Maziar C, Banerjee S, Tasch A, Campbell J, Bean J, Peticolas L. Room temperature electroabsorption in a Ge/sub x/Si/sub 1-x/ PIN photodiode Ieee Transactions On Electron Devices. 41: 2297-2300. DOI: 10.1109/16.337431 |
0.351 |
|
| 1994 |
Bhattacharya SS, Banerjee SK, Nguyen B-, Tobin PJ. Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFET's Ieee Transactions On Electron Devices. 41: 221-227. DOI: 10.1109/16.277375 |
0.328 |
|
| 1994 |
Chen WM, Banerjee SK, Lee JC. Degradation mechanisms and improvement of thermal stability of CoSi 2 /polycrystalline Si layers Applied Physics Letters. 64: 1505-1507. DOI: 10.1063/1.111873 |
0.382 |
|
| 1994 |
Chen WM, Lin J, Banerjee SK, Lee JC. Simultaneous shallow-junction formation and gate doping p-channel metal-semiconductor-oxide field-effect transistor process using cobalt silicide as a diffusion/doping source Applied Physics Letters. 64: 345-347. DOI: 10.1063/1.111143 |
0.447 |
|
| 1994 |
Manna I, Jung L, Bhattacharya S, Banerjee SK. New pin MOSFET structure for hot carrier suppression Electronics Letters. 30: 457-459. DOI: 10.1049/El:19940275 |
0.327 |
|
| 1994 |
Tesauro MR, Banerjee S, Campion A. Removal of hydrogen from 1 × 1 dihydride passivated Si(100) by low-energy rare gas ions: implications for RPCVD Surface Science. 318: L1171-L1174. DOI: 10.1016/0039-6028(94)90333-6 |
0.303 |
|
| 1993 |
Kinosky D, Qian R, Mahajan A, Thomas S, Munguia P, Fretwell J, Banerjee S, Tasch A, Magee C. HF/alcohol preparation of wafers for the reduction of haze in low temperature Si epitaxy by remote plasma chemical vapor deposition Mrs Proceedings. 315: 79-84. DOI: 10.1557/Proc-315-79 |
0.337 |
|
| 1993 |
Kinosky D, Qian R, Mahajan A, Thomas S, Munguia P, Fretwell J, Banerjee SK, Tasch A. Hydrogen plasma cleaning of the Si(100) surface: Removal of oxygen and carbon and the etching of Si Mrs Proceedings. 315: 219-224. DOI: 10.1557/Proc-315-219 |
0.325 |
|
| 1993 |
Lin J, Chen W, Sultan A, Banerjee S, Lee J. Enhanced boron diffusion in silicon with BF2-implanted CoSi2 as diffusion source and under rapid thermal annealing Mrs Proceedings. 303: 265-270. DOI: 10.1557/Proc-303-265 |
0.303 |
|
| 1993 |
Kinosky D, Qian R, Mahajan A, Thomas S, Banerjee S, Tasch A, Magee C. Control of deposition rate in remote plasma enhanced chemical vapor deposition of GexSi1−x/Si heteroepitaxial films Journal of Vacuum Science & Technology B. 11: 1396-1400. DOI: 10.1116/1.586948 |
0.366 |
|
| 1993 |
Lian S, Fowler B, Krishnan S, Jung L, Li C, Manna I, Samara D, Banerjee S. Photo‐enhanced chemical vapor deposition: System design considerations Journal of Vacuum Science and Technology. 11: 2914-2923. DOI: 10.1116/1.578668 |
0.368 |
|
| 1993 |
Batra S, Manning M, Dennison C, Sultan A, Bhattacharya S, Park K, Banerjee SK, Lobo M, Lux G, Kirschbaum C, Norberg J, Smith T, Mulvaney B. Discontinuity of B‐diffusion profiles at the interface of polycrystalline Si and single crystal Si Journal of Applied Physics. 73: 3800-3804. DOI: 10.1063/1.352886 |
0.38 |
|
| 1993 |
Chen WM, Lin J, Banerjee SK, Lee JC. Thermal stability and dopant drive‐out characteristics of CoSi2 polycide gates Journal of Applied Physics. 73: 4712-4714. DOI: 10.1063/1.352743 |
0.407 |
|
| 1993 |
Murtaza SS, Qian R, Kinosky D, Mayer R, Tasch AF, Banerjee S, Campbell JC. Room-temperature measurements of strong electroabsorption effect in Ge xSi1-x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition Applied Physics Letters. 62: 1976-1978. DOI: 10.1063/1.109508 |
0.391 |
|
| 1993 |
Mahajan A, Irby J, Kinosky D, Qian R, Thomas S, Banerjee S, Tasch A, Picraux T. Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment Thin Solid Films. 225: 177-182. DOI: 10.1016/0040-6090(93)90151-E |
0.372 |
|
| 1993 |
Batra S, Picone K, Park KH, Bhattacharya S, Banerjee SK, Lee J, Manning M, Dennison C. Study of lateral non-uniformity as a function of junction depth in ultra-shallow junctions and its effect on leakage behavior in as-deposited polycrystalline Si and amorphous Si diodes Solid-State Electronics. 36: 955-960. DOI: 10.1016/0038-1101(93)90110-C |
0.454 |
|
| 1993 |
Sultan A, Lobo M, Bhattacharya S, Banerjee S, Batra S, Manning M, Dennison C. A physically based phenomenological model using Boltzmann-Matano analysis for boron diffusion from polycrystalline Si into single crystal Si Journal of Electronic Materials. 22: 1129-1135. DOI: 10.1007/Bf02817536 |
0.376 |
|
| 1993 |
Lin J, Chen W, Banerjee S, Lee J, Magee C. Cobalt disilicide as dopant diffusion source for polysilicon gates in MOS devices Journal of Electronic Materials. 22: 667-673. DOI: 10.1007/Bf02666415 |
0.452 |
|
| 1993 |
Batra S, Jeng N, Sultan A, Picone K, Bhattacharya S, Park K, Banerjee S, Kao D, Manning M, Dennison C. Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, As-deposited polycrystalline Si-on-single crystal Si diodes Journal of Electronic Materials. 22: 551-554. DOI: 10.1007/Bf02661629 |
0.435 |
|
| 1992 |
Bhattacharya S, Lobo M, Jung L, Banerjee S, Reuss R, Batra S, Park K, Hu G. Control of Polysilicon Emitter Bipolar Transistor Characteristics by Rapid Thermal or Furnace Anneal of the Polysilicon/Silicon Interface Mrs Proceedings. 283. DOI: 10.1557/Proc-283-721 |
0.375 |
|
| 1992 |
Sultan A, Batra S, Lobo M, Park K, Banerjee S. Modeling of Boron Diffusion in Polysilicon-On-Silicon Layers Mrs Proceedings. 283. DOI: 10.1557/Proc-283-653 |
0.339 |
|
| 1992 |
Qian RZ, Kinosky D, Mahajan A, Thomas S, Fretwell J, Munguia P, Banerjee S, Tasch A. Growth of Ge-on-Si Structures using Remote Plasma-Enhanced Chemical Vapor Deposition Mrs Proceedings. 281. DOI: 10.1557/Proc-281-421 |
0.437 |
|
| 1992 |
Kinosky DS, Qian R, Mahajan A, Thomas S, Fretwell J, Munguia P, Banerjee S, Tasch A. Remote Plasma Cleaning and Ion-Induced Hydrogen Desorption from the Silicon (100) Surface and Its Applications to Si Epitaxy Mrs Proceedings. 279: 831. DOI: 10.1557/Proc-279-831 |
0.344 |
|
| 1992 |
Thomas S, Irby J, Kinosky D, Qian R, Iqbal I, Mahajan A, Banerjee S, Tasch A, Magee C. Characterization of In Situ P-Type and N-Type Doped Si and Ge X Si 1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition Mrs Proceedings. 268: 223. DOI: 10.1557/Proc-268-223 |
0.45 |
|
| 1992 |
Kinosky D, Qian R, Hsu T, Irby J, Mahajan A, Thomas S, Banerjee S, Tasch A, Magee C, Grove CL. The Dependence of Defect Density in Ge x Si 1−x /Si Heterostructures Grown by Remote Plasma-Enhanced Chemical Vapor Deposition on Deposition Parameters Mrs Proceedings. 263. DOI: 10.1557/Proc-263-445 |
0.352 |
|
| 1992 |
Lin J, Chen W, Banerjee S, Lee J, Teng C, Magee C. Study of Sitox Process and its Application to Advanced MOS Devices Mrs Proceedings. 260: 623. DOI: 10.1557/Proc-260-623 |
0.308 |
|
| 1992 |
Chen W, Lin J, Banerjee S, Lee J. Thermal Stability of Cobalt Disilicide for Self-Aligned Silicide Applications Mrs Proceedings. 260. DOI: 10.1557/Proc-260-163 |
0.35 |
|
| 1992 |
Banerjee S, Tasch A, Hsu T, Qian R, Kinosky D, Irby J, Mahajan A, Thomas S. In Situ Low Temperature Cleaning and Passivation of Silicon by Remote Hydrogen Plasma for Silicon-Based Epitaxy Mrs Proceedings. 259. DOI: 10.1557/Proc-259-43 |
0.392 |
|
| 1992 |
Batra S, Park K, Lobo M, Banerjee S. Secondary Grain Growth in Heavily Doped Polysilicon During Rapid Thermal Annealing Mrs Proceedings. 230: 201. DOI: 10.1557/Proc-230-201 |
0.316 |
|
| 1992 |
Fowler B, Lian S, Krishnan S, Jung L, Li C, Banerjee S. ArF Excimer Laser‐Enhanced Photochemical Vapor Deposition of Homoepitaxial Silicon from Disilane Journal of the Electrochemical Society. 139: 2314-2318. DOI: 10.1149/1.2221222 |
0.345 |
|
| 1992 |
Lian S, Fowler B, Krishnan S, Jung L, Li C, Banerjee S. Silicon Homoepitaxial Films Grown by Photo-Enhanced Chemical Vapor Deposition from Si2h6 Journal of the Electrochemical Society. 139: 2273-2277. DOI: 10.1149/1.2221214 |
0.405 |
|
| 1992 |
Qian R, Kinosky D, Hsu T, Irby J, Mahajan A, Thomas S, Anthony B, Banerjee S, Tasch A, Rabenberg L, Magee C. Growth of GexSi1−x/Si heteroepitaxial films by remote plasma chemical vapor deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 10: 1920-1926. DOI: 10.1116/1.578116 |
0.392 |
|
| 1992 |
Bhattacharya S, Banerjee SK, Lee JC, Tasch AF, Chatterjee A. Parametric Study of Latchup Immunity of Deep Trench-Isolated, Bulk, Nonepitaxial CMOS Ieee Transactions On Electron Devices. 39: 921-931. DOI: 10.1109/16.127484 |
0.34 |
|
| 1992 |
Hsu T, Anthony B, Qian R, Irby J, Kinosky D, Mahajan A, Banerjee SK, Tasch A. Remote plasma-enhanced chemical vapor deposition (rpcvd) process for low temperature (<450°c) epitaxy of si and si, 1-xgex Materials and Manufacturing Processes. 7: 593-612. DOI: 10.1080/10426919208947443 |
0.424 |
|
| 1992 |
Fowler B, Lian S, Krishnan S, Jung L, Li C, Samara D, Manna I, Banerjee SK. Epitaxial silicon growth conditions and kinetics in low‐temperature ArF excimer laser photochemical‐vapor deposition from disilane Journal of Applied Physics. 72: 1137-1148. DOI: 10.1063/1.351791 |
0.316 |
|
| 1992 |
Hsu T, Lin S, Anthony B, Qian R, Irby J, Kinosky D, Mahajan A, Banerjee SK, Tasch A, Marcus H. Hydrogen desorption on various H‐terminated Si(100) surfaces due to electron beam irradiation: Experiments and modeling Applied Physics Letters. 61: 580-582. DOI: 10.1063/1.107843 |
0.341 |
|
| 1992 |
Tsai C, Li KH, Kinosky DS, Qian RZ, Hsu TC, Irby JT, Banerjee SK, Tasch AF, Campbell JC, Hance BK, White JM. Correlation between silicon hydride species and the photoluminescence intensity of porous silicon Applied Physics Letters. 60: 1700-1702. DOI: 10.1063/1.107190 |
0.37 |
|
| 1992 |
Fowler B, Lian S, Krishnan S, Jung L, Li C, Samara D, Manna I, Banerjee SK. Mechanisms of low temperature epitaxial silicon growth using ArF excimer laser photochemical vapor deposition from disilane Thin Solid Films. 218: 48-57. DOI: 10.1016/0040-6090(92)90902-N |
0.377 |
|
| 1992 |
Anthony B, Hsu T, Qian R, Irby J, Kinosky D, Banerjee S, Tasch A, Magee C. Physical and electrical characterization of in situ boron-doped single-crystal silicon films grown at 450°C using remote plasma-enhanced chemical vapor deposition Thin Solid Films. 207: 12-14. DOI: 10.1016/0040-6090(92)90092-P |
0.374 |
|
| 1992 |
Hsu T, Anthony B, Qian R, Irby J, Kinosky D, Mahajan A, Banerjee S, Magee C, Tasch A. Advances in remote plasma-enhanced chemical vapor deposition for low temperature in situ hydrogen plasma clean and Si and Si 1- x Ge x epitaxy Journal of Electronic Materials. 21: 65-74. DOI: 10.1007/Bf02670922 |
0.423 |
|
| 1992 |
Qian R, Anthony B, Hsu T, Irby J, Kinosky D, Banerjee S, Tasch A. Structural analysis of Ge x Si 1- x /Si layers by remote plasma-enhanced chemical vapor deposition on Si (100) Journal of Electronic Materials. 21: 395-399. DOI: 10.1007/Bf02660402 |
0.423 |
|
| 1992 |
Batra S, Park KH, Banerjee SK, Lux GE, Kirschbaum CL, Norberg JC, Smith TC, Elliott JK, Mulvaney BJ. Effect of grain microstructure on P diffusion in polycrystalline-on-single crystal silicon systems Journal of Electronic Materials. 21: 227-231. DOI: 10.1007/Bf02655841 |
0.33 |
|
| 1992 |
Irby J, Kinosky D, Hsu T, Qian R, Mahajan A, Thomas S, Anthony B, Banerjee S, Tasch A, Magee C. In situ B-doped Si epitaxial films grown at 450° C by remote plasma enhanced chemical vapor deposition: physical and electrical characterization Journal of Electronic Materials. 21: 543-547. DOI: 10.1007/Bf02655622 |
0.424 |
|
| 1992 |
Krishnan S, Lian S, Fowler B, Jung L, Li C, Banerjee S. Characterization of Si homoepitaxial films grown with and without surface photoactivation by ArF excimer laser-induced photodissociation of Si 2 H 6 Journal of Electronic Materials. 21: 559-562. DOI: 10.1007/Bf02655421 |
0.339 |
|
| 1991 |
Qian R, Chung I, Kinosky D, Hsu T, Irby J, Mahajan A, Thomas S, Banerjee S, Tasch A. Growth and High Resolution Tem Characterization of Ge x Si 1−x /Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition Mrs Proceedings. 235. DOI: 10.1557/Proc-235-811 |
0.383 |
|
| 1991 |
Batra S, Park K, Banerjee S, Smith T, Mulvaney B. Lateral Uniformity of Ultra-Shallow Junctions Formed by Rapid Thermal Annealing in Polysilicon-on-Silicon Systems Mrs Proceedings. 224: 329. DOI: 10.1557/Proc-224-329 |
0.331 |
|
| 1991 |
Bhattacharya S, Banerjee S, Lee J, Tasch A, Chatterjee A. The impact of trench isolation on latch-up immunity in bulk nonepitaxial CMOS Ieee Electron Device Letters. 12: 77-79. DOI: 10.1109/55.75709 |
0.327 |
|
| 1991 |
Park K, Batra S, Banerjee SK, Lux G, Smith TC. Analysis of ion-implanted amorphous and polycrystalline silicon films as diffusion sources for ultrashallow junctions Journal of Applied Physics. 70: 1397-1404. DOI: 10.1063/1.349548 |
0.401 |
|
| 1991 |
Qian R, Anthony B, Hsu T, Irby J, Kinosky D, Banerjee S, Tasch A, Rabenberg L, Magee C. Crystallographic characterization of GexSi1−x/Si superlattices grown by remote plasma‐enhanced chemical vapor deposition Journal of Applied Physics. 70: 3324-3328. DOI: 10.1063/1.349265 |
0.387 |
|
| 1991 |
Park K, Batra S, Banerjee SK. Analysis of lateral uniformity of ultrashallow junctions in polycrystalline silicon‐on‐single crystal silicon systems Applied Physics Letters. 59: 709-711. DOI: 10.1063/1.105372 |
0.378 |
|
| 1991 |
Kinosky D, Qian R, Irby J, Hsu T, Anthony B, Banerjee S, Tasch A, Magee C, Grove CL. Low-temperature growth of GexSi1-x/Si heterostructures on Si(100) by remote plasma-enhanced chemical vapor deposition Applied Physics Letters. 59: 817-819. DOI: 10.1063/1.105272 |
0.4 |
|
| 1991 |
Lin J, Park K, Batra S, Banerjee SK, Lee J, Lux G. Enhancement of boron diffusion through gate oxides in metal‐oxide‐semiconductor devices under rapid thermal silicidation Applied Physics Letters. 58: 2123-2125. DOI: 10.1063/1.104980 |
0.378 |
|
| 1991 |
Lian S, Fowler B, Bullock D, Banerjee S. ArF excimer laser induced photolytic growth of Si homoepitaxial films from Si2H6 at 330°C Applied Physics Letters. 58: 514-516. DOI: 10.1063/1.104599 |
0.375 |
|
| 1991 |
Lian S, Fowler B, Krishnan S, Jung L, Banerjee SK. Silicon homoepitaxy using photochemical vapor deposition: a reflection high energy electron diffraction and transmission electron microscopy study Materials Science and Engineering B-Advanced Functional Solid-State Materials. 10: 181-186. DOI: 10.1016/0921-5107(91)90124-E |
0.386 |
|
| 1991 |
Anthony B, Hsu T, Qian R, Irby J, Banerjee S, Tasch A. The use of Langmuir probe measurements to investigate the reaction mechanisms of remote plasma-enhanced chemical vapor deposition Journal of Electronic Materials. 20: 309-313. DOI: 10.1007/Bf02657896 |
0.327 |
|
| 1991 |
Hsu T, Anthony B, Qian R, Irby J, Banerjee S, Tasch A, Lin S, Marcus H, Magee C. Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy Journal of Electronic Materials. 20: 279-287. DOI: 10.1007/Bf02651904 |
0.386 |
|
| 1991 |
Park K, Batra S, Banerjee S, Lux G. Ultra-shallow junctions in silicon using amorphous and polycrystalline silicon solid diffusion sources Journal of Electronic Materials. 20: 261-265. DOI: 10.1007/Bf02651902 |
0.38 |
|
| 1990 |
Fowler B, Lian T, Bullock D, Banerjee S. Silicon Homoepitaxy at 300°C Using ArF Excimer Laser Photolysis of Disilane Mrs Proceedings. 201. DOI: 10.1557/Proc-201-153 |
0.391 |
|
| 1990 |
Lin J, Batra S, Park K, Lee J, Banerjee S, Sun S, Yeargain J, Lux G. Effects of Arsenic Segregation and Electron Trapping on the Capacitance-Voltage Behavior of Polysilicon and Polycide Gates Mrs Proceedings. 182: 195. DOI: 10.1557/Proc-182-195 |
0.318 |
|
| 1990 |
Park K, Batra S, Banerjee S, Lux G. Comparison of Amorphous and Polycrystalline Silicon Films as a Solid Diffusion Source for Advanced VLSI Processes Mrs Proceedings. 182: 159. DOI: 10.1557/Proc-182-159 |
0.433 |
|
| 1990 |
Batra S, Park K, Banerjee S, Kwong D, Tasch A, Rodder M, Sundaresan R. Rapid thermal hydrogen passivation of polysilicon MOSFETs Ieee Electron Device Letters. 11: 194-196. DOI: 10.1109/55.55247 |
0.313 |
|
| 1990 |
Lin J, Banerjee S, Lee J, Teng C. Soft breakdown in titanium-silicided shallow source/drain junctions Ieee Electron Device Letters. 11: 191-193. DOI: 10.1109/55.55246 |
0.333 |
|
| 1990 |
Batra S, Park K, Lin J, Yoganathan S, Lee JC, Banerjee SK, Sun SW, Lux G. Effect of dopant redistribution, segregation, and carrier trapping in As-implanted MOS gates Ieee Transactions On Electron Devices. 37: 2322-2330. DOI: 10.1109/16.62295 |
0.428 |
|
| 1990 |
Lin J, Banerjee SK, Lee J, Teng C. Anomalous current‐voltage behavior in titanium‐silicided shallow source/drain junctions Journal of Applied Physics. 68: 1082-1087. DOI: 10.1063/1.346748 |
0.326 |
|
| 1990 |
Park K, Batra S, Lin J, Yoganathan S, Banerjee SK, Lee J, Sun S, Yeargain J, Lux G. Anomalous capacitance-voltage behavior due to dopant segregation and carrier trapping in As-implanted polycrystalline silicon and silicided polycrystalline silicon gates Applied Physics Letters. 56: 2325-2327. DOI: 10.1063/1.102908 |
0.468 |
|
| 1990 |
Hsu T, Anthony B, Breaux L, Qian R, Banerjee S, Magee C, Harrington W. Defect microstructure in single crystal silicon thin films grown at 150°C–350°C by the remote plasma-enhanced chemical vapor deposition Journal of Electronic Materials. 19: 1043-1050. DOI: 10.1007/Bf02651979 |
0.385 |
|
| 1990 |
Anthony B, Hsu T, Breaux L, Qian R, Banerjee S. Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy Journal of Electronic Materials. 19: 1027-1032. DOI: 10.1007/Bf02651977 |
0.307 |
|
| 1990 |
Hsu T, Breaux L, Anthony B, Banerjee S, Tasch A. Defect microstructure in low temperature epitaxial silicon grown by RPCVD Journal of Electronic Materials. 19: 375-384. DOI: 10.1007/Bf02651300 |
0.396 |
|
| 1989 |
Anthony B, Hsu T, Breaux L, Banerjee S, Tasch A. Reaction Kinetics of Epitaxial Silicon Deposition at 220-400°C Using Remote Plasma-Enhanced Chemical Vapor Deposition Mrs Proceedings. 165: 145. DOI: 10.1557/Proc-165-145 |
0.308 |
|
| 1989 |
Hsu T, Anthony B, Breaux L, Banerjee S, Tasch A. Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C Mrs Proceedings. 165. DOI: 10.1557/Proc-165-139 |
0.346 |
|
| 1989 |
Anthony B, Breaux L, Hsu T, Banerjee S, Tasch A. In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen Journal of Vacuum Science & Technology B. 7: 621-626. DOI: 10.1116/1.584805 |
0.357 |
|
| 1989 |
Shin H, Tasch AF, Maziar CM, Banerjee SK. A New Approach to Verify and Derive a Transverse-Field-Dependent Mobility Model for Electrons in MOS Inversion Layers Ieee Transactions On Electron Devices. 36: 1117-1124. DOI: 10.1109/16.24356 |
0.373 |
|
| 1989 |
Breaux L, Anthony B, Hsu T, Banerjee SK, Tasch A. Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition Applied Physics Letters. 55: 1885-1887. DOI: 10.1063/1.102161 |
0.399 |
|
| 1988 |
Banerjee S, Sundaresan R, Shichijo H, Malhi S. Hot-electron degradation of n-channel polysilicon MOSFETs Ieee Transactions On Electron Devices. 35: 152-157. DOI: 10.1109/16.2434 |
0.326 |
|
| 1987 |
Banerjee S, Bordelon DM. A Model for the Trench Transistor Ieee Transactions On Electron Devices. 34: 2485-2492. DOI: 10.1109/T-Ed.1987.23339 |
0.352 |
|
| 1987 |
Banerjee S, Richardson W, Coleman J, Chatterjee A. A new three-terminal tunnel device Ieee Electron Device Letters. 8: 347-349. DOI: 10.1109/Edl.1987.26655 |
0.345 |
|
| 1986 |
Shah AH, Gallia JD, Davis HE, Elahy M, Banerjee SK, Pollack GP, Richardson WF, Bordelon DM, Malhi SDS, Chatterjee PK, Wang CP, Womack RH, Shichijo H, Pilch CJ, Tran B. A 4-Mbit DRAM with Trench-Transistor Cell Ieee Journal of Solid-State Circuits. 21: 618-626. DOI: 10.1109/Jssc.1986.1052586 |
0.312 |
|
| 1985 |
Shichijo H, Malhi SDS, Sundaresan R, Banerjee SK, Lam HW. Process and Device Considerations for Small Grain Polysilicon Transistors Mrs Proceedings. 53. DOI: 10.1557/Proc-53-419 |
0.323 |
|
| 1985 |
Fossum JG, Ortiz-Conde A, Shichijo H, Banerjee SK. Anomalous leakage current in LPCVD PolySilicon MOSFET's Ieee Transactions On Electron Devices. 32: 1878-1884. DOI: 10.1109/T-Ed.1985.22212 |
0.322 |
|
| 1985 |
Malhi SDS, Shichijo H, Banerjee SK, Sundaresan R, Elahy M, Pollack GP, Richardson WF, Shah AH, Hite LR, Womack RH, Chatterjee PK, Lam HW. Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon Ieee Transactions On Electron Devices. 32: 258-281. DOI: 10.1109/T-Ed.1985.21939 |
0.385 |
|
| 1985 |
Malhi SDS, Shichijo H, Banerjee SK, Sundaresan R, Elahy M, Pollack GP, Richardson WF, Shah AH, Hite LR, Womack RH, Chatterjiee PK, Lam HW. Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon Ieee Journal of Solid-State Circuits. 20: 178-201. DOI: 10.1109/Jssc.1985.1052293 |
0.385 |
|
| 1984 |
Elahy M, Shichijo H, Chatterjee PK, Shah AH, Banerjee SK, Womack RH. Trench capacitor leakage in high-density DRAM's Ieee Electron Device Letters. 5: 527-530. DOI: 10.1109/Edl.1984.26013 |
0.354 |
|
| 1984 |
Pollack GP, Richardson WF, Malhi SDS, Bonifield T, Shichijo H, Banerjee S, Elahy M, Shah AH, Womack R, Chatterjee PK. Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source Ieee Electron Device Letters. 5: 468-470. DOI: 10.1109/Edl.1984.25991 |
0.336 |
|
| 1975 |
Ganguly S, Sarkar D, Sengupta D, Banerjee SK, Ghosh JJ. Hyaluronidase activity of human endometrial tissues & uterine fluids. Indian Journal of Experimental Biology. 13: 497-8. PMID 1218911 |
0.377 |
|
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